A
|
|
AlN |
Nishino, Katsushi |
BCD |
E
|
|
electron device |
Ao, Jin-Ping |
F
|
|
femtosecond laser processing/modification |
Tomita, Takuro |
G
|
|
graphene |
Nagase, Masao |
HIJK |
L
|
|
LED |
Kawakami, Retsuo |
M
|
|
monolithic integrated circuit |
Ao, Jin-Ping |
N
|
|
nanometrology |
Nagase, Masao |
nanostructure |
Nagase, Masao / Takashima, Yuusuke |
O
|
|
optical device |
Naoi, Yoshiki / Takashima, Yuusuke |
optical properties of solid |
Tomita, Takuro |
P
|
|
photonic device (→ optical device) |
QR |
S
|
|
semiconductor |
Ao, Jin-Ping / Kawakami, Retsuo |
semiconductor device |
Nagase, Masao |
silicon |
Nagase, Masao |
TUVWXYZ |