| A
|
|
| AlN |
Nishino, Katsushi |
| BCD |
| E
|
|
| electron device |
Ao, Jin-Ping |
| F
|
|
| femtosecond laser processing/modification |
Tomita, Takuro |
| G
|
|
| graphene |
Nagase, Masao |
| HIJK |
| L
|
|
| LED |
Kawakami, Retsuo |
| M
|
|
| monolithic integrated circuit |
Ao, Jin-Ping |
| N
|
|
| nanometrology |
Nagase, Masao |
| nanostructure |
Nagase, Masao / Takashima, Yuusuke |
| O
|
|
| optical device |
Naoi, Yoshiki / Takashima, Yuusuke |
| optical properties of solid |
Tomita, Takuro |
| P
|
|
| photonic device (→ optical device) |
| QR |
| S
|
|
| semiconductor |
Ao, Jin-Ping / Kawakami, Retsuo |
| semiconductor device |
Nagase, Masao |
| silicon |
Nagase, Masao |
| TUVWXYZ |