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{"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=230025","label":"url"}],"paper_title":{"en":"グラフェン研究の現状と新規材料としての可能性","ja":"グラフェン研究の現状と新規材料としての可能性"},"authors":{"en":[{"name":"Nagase Masao"}],"ja":[{"name":"永瀬 雅夫"}]},"publication_date":"2011-05","publication_name":{"en":"炭素材料の研究開発動向 2011","ja":"炭素材料の研究開発動向 2011"},"starting_page":"61","ending_page":"70","languages":["jpn"],"invited":true,"misc_type":"introduction_scientific_journal"},"priority":"input_data"}
{"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=221761","label":"url"}],"paper_title":{"en":"SiC 上エピタキシャルグラフェンの成長と評価","ja":"SiC 上エピタキシャルグラフェンの成長と評価"},"authors":{"en":[{"name":"Hibino Hiroki"},{"name":"Kageshima Hiroyuki"},{"name":"田邉 真一"},{"name":"Nagase Masao"},{"name":"水野 清義"}],"ja":[{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"田邉 真一"},{"name":"永瀬 雅夫"},{"name":"水野 清義"}]},"publication_date":"2010-11-15","publication_name":{"en":"固体物理","ja":"固体物理"},"volume":"45","starting_page":"645","ending_page":"655","languages":["jpn"],"invited":true,"misc_type":"introduction_scientific_journal"},"priority":"input_data"}
{"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/110007817399/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1390282680872867712/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=222415","label":"url"}],"paper_title":{"en":"Theoretical Study of Epitaxial Graphene Growth on SiC(<Special Topic>Growth of Graphen and its Applications)","ja":"SiC上エピタキシャルグラフェン成長の理論検討"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Nagase Masao"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"永瀬 雅夫"},{"name":"山口 浩司"}]},"description":{"en":"Epitaxial graphene growth on SiC (0001) is studied with the first-principles calculation. The growth process is modeled by the C aggregation on the terrace, and the energetics is studied. Adsorbed C atoms prefer to form sp^2 bonds, and make C-C bonds rather than terminating dangling bonds of the surface Si. Si-terminated surface of the substrate is important to form thin and flat epitaxial graphene sheets. The surface Si atoms act as the catalyst. In addition, a new graphene sheet preferably forms at the interface between the old graphene sheets and the Si-terminated surface of the substrate. This means that the epitaxial graphene growth is the interfacial growth, being different from the general epitaxial growth. It is also found that Si desorption sites trap excess C atoms and grow into graphene islands.","ja":"SiC(0001)面上のエピタキシャルグラフェン成長を,テラス上のC凝集過程と捉えて,そのエナージェティクスを第一原理計算によって追跡した.吸着C原子はsp^2結合を作りやすく,表面Siの未結合手の終端に優先して,C-C結合を形成する.Si終端表面であることは,薄くて平滑なグラフェンシートのエピタキシャル成長にとって重要で,表面Siはあたかも触媒のように作用する.また,新しいグラフェンシートは,常に元からあるグラフェンシートの下の基板Si終端面の上に成長していく界面成長であり,最表面に新しい層ができる通常のエピタキシャル成長とは異なる.さらにSiの脱離サイトは余剰C原子を捕らえ,グラフェン島を形成していくものと考えられる."},"publication_date":"2010-10","publication_name":{"en":"Journal of the Japanese Association for Crystal Growth","ja":"日本結晶成長学会誌"},"volume":"37","starting_page":"190","ending_page":"195","languages":["jpn"],"invited":true,"identifiers":{"issn":["0385-6275"]},"misc_type":"introduction_scientific_journal"},"priority":"input_data"}
{"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"http://www.ntt.co.jp/journal/1006/files/jn201006018.pdf","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1523669555609604992/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=210935","label":"url"}],"paper_title":{"en":"シリコンカーバイド上のグラフェン成長 --- 特集 材料基礎研究所最前線","ja":"シリコンカーバイド上のグラフェン成長 --- 特集 材料基礎研究所最前線"},"authors":{"en":[{"name":"HIBINO Hiroki"},{"name":"KAGESHIMA Hiroyuki"},{"name":"Nagase Masao"}],"ja":[{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"永瀬 雅夫"}]},"publication_date":"2010-06","publication_name":{"en":"NTT技術ジャーナル","ja":"NTT技術ジャーナル"},"volume":"22","number":"6","starting_page":"18","ending_page":"21","languages":["jpn"],"invited":true,"identifiers":{"issn":["0915-2318"]},"misc_type":"introduction_scientific_journal"},"priority":"input_data"}
{"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"http://id.ndl.go.jp/bib/10606205","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1390282680271675136/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=210621","label":"url"}],"paper_title":{"en":"Analysis of Number of Layers in Epitaxial Few-Layer Graphene Grown on SiC towards Single-Crystal Graphene Substrate","ja":"単結晶グラフェン基板の創製に向けた SiC 上エピタキシャル少数層グラフェンの層数解析"},"authors":{"en":[{"name":"HIBINO Hiroki"},{"name":"KAGESHIMA Hiroyuki"},{"name":"Nagase Masao"}],"ja":[{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"永瀬 雅夫"}]},"description":{"en":"We review our research toward single-crystal growth of epitaxial few-layer graphene (FLG) on SiC substrates, in which surface electron microscopy techniques have played essential roles. We have established a method for evaluating the number of graphene layers microscopically using low-energy electron microscopy. The number-of-layers dependence of the work function and C1s binding energy is determined using photoelectron emission microscopy. We use LEEM and thermionic electron emission microscopy to investigate the growth processes of epitaxial FLG. Uniform bilayer graphene a few micrometers in size is obtained by annealing in UHV.","ja":"We review our research toward single-crystal growth of epitaxial few-layer graphene (FLG) on SiC substrates, in which surface electron microscopy techniques have played essential roles. We have established a method for evaluating the number of graphene layers microscopically using low-energy electron microscopy. The number-of-layers dependence of the work function and C1s binding energy is determined using photoelectron emission microscopy. We use LEEM and thermionic electron emission microscopy to investigate the growth processes of epitaxial FLG. Uniform bilayer graphene a few micrometers in size is obtained by annealing in UHV."},"publication_date":"2010-02","publication_name":{"en":"Journal of the Vacuum Society of Japan","ja":"Journal of the Vacuum Society of Japan"},"volume":"53","number":"2","starting_page":"101","ending_page":"108","languages":["jpn"],"invited":true,"identifiers":{"doi":["10.3131/jvsj2.53.101"],"issn":["1882-2398"]},"misc_type":"introduction_scientific_journal"},"priority":"input_data"}
{"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=209346","label":"url"}],"paper_title":{"en":"炭素材料グラフェン","ja":"炭素材料グラフェン"},"authors":{"en":[{"name":"Nagase Masao"}],"ja":[{"name":"永瀬 雅夫"}]},"publication_date":"2010-01","publication_name":{"en":"工業材料","ja":"工業材料"},"volume":"58","starting_page":"44","ending_page":"45","languages":["jpn"],"invited":true,"misc_type":"introduction_scientific_journal"},"priority":"input_data"}