=== Generating (published_papers) ===
=== Generating (research_interests) ===
=== Generating (education) ===
=== Generating (research_experience) ===
=== Generating (misc) ===
=== Generating (research_projects) ===
=== Generating (books_etc) ===
=== Generating (industrial_property_rights) ===
=== Generating (awards) ===
=== Generating (association_memberships) ===
=== Generating (teaching_experience) ===
=== Generating (committee_memberships) ===
=== Generating (presentations) ===
==== begin registerFile(/WWW/pub2/data/ERD/person/207318/researchmap/published_papers.jsonl) ====
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line:18, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070007"},"force":{"see_also":[{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/111013","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=310219","label":"url"}],"paper_title":{"en":"Microscopic Raman Study of Graphene on 4H-SiC Two-Dimensionally Enhanced by Surface Roughness and Gold Nanoparticles","ja":"Microscopic Raman Study of Graphene on 4H-SiC Two-Dimensionally Enhanced by Surface Roughness and Gold Nanoparticles"},"authors":{"en":[{"name":"Matsumura Hisatomo"},{"name":"Yanagiya Shin-ichiro"},{"name":"Nagase Masao"},{"name":"Kishikawa Hiroki"},{"name":"Goto Nobuo"}],"ja":[{"name":"松村 尚知"},{"name":"柳谷 伸一郎"},{"name":"永瀬 雅夫"},{"name":"岸川 博紀"},{"name":"後藤 信夫"}]},"publication_date":"2016-05-26","publication_name":{"en":"Japanese Journal of Applied Physics","ja":"Japanese Journal of Applied Physics"},"volume":"Vol.55","number":"No.6S1","starting_page":"06GL05","ending_page":"06GL05","languages":["eng"],"referee":true,"identifiers":{"doi":["10.7567/JJAP.55.06GL05"],"issn":["1347-4065"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:19, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070008"},"force":{"see_also":[{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-84974559680&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=315035","label":"url"}],"paper_title":{"en":"Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates","ja":"Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates"},"authors":{"en":[{"name":"Ohno Yasuhide"},{"name":"Yasushi Kanai"},{"name":"Yuki Mori"},{"name":"Nagase Masao"},{"name":"Kazuhiko Matsumoto"}],"ja":[{"name":"大野 恭秀"},{"name":"Yasushi Kanai"},{"name":"Yuki Mori"},{"name":"永瀬 雅夫"},{"name":"Kazuhiko Matsumoto"}]},"publication_date":"2016-05-16","publication_name":{"en":"Japanese Journal of Applied Physics","ja":"Japanese Journal of Applied Physics"},"volume":"Vol.55","number":"No.6S1","starting_page":"06GF09","ending_page":"06GF09","languages":["eng"],"referee":true,"identifiers":{"doi":["10.7567/JJAP.55.06GF09"],"issn":["1347-4065"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:20, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/110895","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-84974539388&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=312461","label":"url"}],"paper_title":{"en":"Epitaxial graphene on SiC formed by the surface structure control technique","ja":"Epitaxial graphene on SiC formed by the surface structure control technique"},"authors":{"en":[{"name":"Takuya Aritsuki"},{"name":"Takeshi Nakashima"},{"name":"Keisuke Kobayashi"},{"name":"Ohno Yasuhide"},{"name":"Nagase Masao"}],"ja":[{"name":"有月 琢哉"},{"name":"中島 健志"},{"name":"小林 慶祐"},{"name":"大野 恭秀"},{"name":"永瀬 雅夫"}]},"description":{"en":"The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 °C for 5 min in 100 Torr Ar ambient had a maximum value of 2089 cm2 V%1 s%1. We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure.","ja":"The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 °C for 5 min in 100 Torr Ar ambient had a maximum value of 2089 cm2 V%1 s%1. We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure."},"publication_date":"2016-04-26","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.55","number":"No.6","starting_page":"06GF03","ending_page":"(4pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.7567/JJAP.55.06GF03"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:21, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://iopscience.iop.org/1347-4065/54/3/036502/article","label":"url"},{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/110896","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1050845762396358528/","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-84924244238&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=289594","label":"url"}],"paper_title":{"en":"Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene","ja":"Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene"},"authors":{"en":[{"name":"Ryong-Sok O"},{"name":"Makoto Takamura"},{"name":"Kazuaki Furukawa"},{"name":"Nagase Masao"},{"name":"Hibino Hiroki"}],"ja":[{"name":"Ryong-Sok O"},{"name":"Makoto Takamura"},{"name":"Kazuaki Furukawa"},{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"}]},"description":{"en":"We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 m/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.","ja":"We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 m/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC."},"publication_date":"2015-01-30","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.54","number":"No.3","starting_page":"036502","ending_page":"(5pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.7567/JJAP.54.036502"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:22, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070009"},"force":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/40020187892/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1390848647544380928/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=283697","label":"url"}],"paper_title":{"en":"Surface-Enhanced Raman Scattering of Graphene on SiC by Gold Nanoparticles","ja":"金微粒子によるSiC上グラフェンの表面増強ラマン散乱"},"authors":{"en":[{"name":"Sekine Yoshiaki"},{"name":"Hibino Hiroki"},{"name":"小栗 克弥"},{"name":"岩本 篤"},{"name":"Nagase Masao"},{"name":"影島 博之"},{"name":"佐々木 健一"},{"name":"赤崎 達志"}],"ja":[{"name":"関根 佳明"},{"name":"日比野 浩樹"},{"name":"小栗 克弥"},{"name":"岩本 篤"},{"name":"永瀬 雅夫"},{"name":"影島 博之"},{"name":"佐々木 健一"},{"name":"赤崎 達志"}]},"publication_date":"2014-08-15","publication_name":{"en":"The Review of Laser Engineering","ja":"レーザー研究"},"volume":"Vol.42","number":"No.8","starting_page":"652","ending_page":"657","languages":["jpn"],"referee":true,"identifiers":{"issn":["0387-0200"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:23, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070010"},"force":{"see_also":[{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-84896073818&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=275210","label":"url"}],"paper_title":{"en":"Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)","ja":"Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Yamaguchi Hiroshi"},{"name":"Nagase Masao"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"山口 浩司"},{"name":"永瀬 雅夫"}]},"publication_date":"2014-02","publication_name":{"en":"Materials Science Forum","ja":"Materials Science Forum"},"volume":"Vol.778-780","starting_page":"1150","ending_page":"1153","languages":["eng"],"referee":true,"identifiers":{"doi":["10.4028/www.scientific.net/MSF.778-780.1150"],"issn":["1662-9752"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:24, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=274499","label":"url"}],"paper_title":{"en":"Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface","ja":"Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Yamaguchi Hiroshi"},{"name":"Nagase Masao"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"山口 浩司"},{"name":"永瀬 雅夫"}]},"description":{"en":"The stability and reactivity of steps in the initial stage of the graphene growth by sublimating the SiC(0001) surface is theoretically studied by the first-principles calculation. The steps are not necessarily unstable and reactive during the formation of the zeroth graphene layer. Temperature, Si pressure, and C coverage affect the stability and reactivity of the step. The growth mode shows a phase transition. The step is unstable and reactive after the zeroth graphene layer is formed. These findings are tightly related to the graphene formation mechanism on this surface. They are discussed with experimental results and suggest a way to control the quality of graphene.","ja":"The stability and reactivity of steps in the initial stage of the graphene growth by sublimating the SiC(0001) surface is theoretically studied by the first-principles calculation. The steps are not necessarily unstable and reactive during the formation of the zeroth graphene layer. Temperature, Si pressure, and C coverage affect the stability and reactivity of the step. The growth mode shows a phase transition. The step is unstable and reactive after the zeroth graphene layer is formed. These findings are tightly related to the graphene formation mechanism on this surface. They are discussed with experimental results and suggest a way to control the quality of graphene."},"publication_date":"2013-12-03","publication_name":{"en":"Physical Review B, Condensed Matter and Materials Physics","ja":"Physical Review B, Condensed Matter and Materials Physics"},"volume":"Vol.88","number":"No.23","starting_page":"235405","ending_page":"(7pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1103/PhysRevB.88.235405"],"issn":["1098-0121"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:25, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000104136/","label":"url"},{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/110898","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1050001337466226688/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=254935","label":"url"}],"paper_title":{"en":"Microscopic Raman mapping of epitaxial graphene on 4H-SiC (0001)","ja":"Microscopic Raman mapping of epitaxial graphene on 4H-SiC (0001)"},"authors":{"en":[{"name":"Ryongsok O"},{"name":"Iwamoto Atsushi"},{"name":"Nishi Yuki"},{"name":"Funase Yuya"},{"name":"Yuasa Takahiro"},{"name":"Tomita Takuro"},{"name":"Nagase Masao"},{"name":"Hibino Hiroki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"Ryongsok O"},{"name":"Iwamoto Atsushi"},{"name":"Nishi Yuki"},{"name":"Funase Yuya"},{"name":"Yuasa Takahiro"},{"name":"富田 卓朗"},{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"},{"name":"山口 浩司"}]},"description":{"en":"We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3--4 layers) induced phonon softening ({im}6 cm-1) and broadening ({im}6 cm-1) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak.","ja":"We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3--4 layers) induced phonon softening ({im}6 cm-1) and broadening ({im}6 cm-1) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak."},"publication_date":"2012-06-20","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.51","number":"No.6","starting_page":"06FD06","ending_page":"(5pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.51.06FD06"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:26, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=243897","label":"url"}],"paper_title":{"en":"Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects","ja":"Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Nagase Masao"},{"name":"Sekine Yoshiaki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"永瀬 雅夫"},{"name":"関根 佳明"},{"name":"山口 浩司"}]},"publication_date":"2011-12","publication_name":{"en":"AIP Conference Proceedings","ja":"AIP Conference Proceedings"},"volume":"Vol.1399","starting_page":"755","ending_page":"756","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1063/1.3666596"],"issn":["0094-243X"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:27, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=242104","label":"url"}],"paper_title":{"en":"Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon","ja":"Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon"},"authors":{"en":[{"name":"Ono Y."},{"name":"Miyazaki Y."},{"name":"Yabuuchi S."},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"},{"name":"Fujiwara A."},{"name":"Ohta E."}],"ja":[{"name":"Ono Y."},{"name":"Miyazaki Y."},{"name":"Yabuuchi S."},{"name":"影島 博之"},{"name":"永瀬 雅夫"},{"name":"Fujiwara A."},{"name":"Ohta E."}]},"publication_date":"2011-10-03","publication_name":{"en":"Thin Solid Films","ja":"Thin Solid Films"},"volume":"Vol.519","number":"No.24","starting_page":"8505","ending_page":"8508","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1016/j.tsf.2011.05.027"],"issn":["0040-6090"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:28, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=241172","label":"url"}],"paper_title":{"en":"Carrier transport mechanism in graphene on SiC(0001)","ja":"Carrier transport mechanism in graphene on SiC(0001)"},"authors":{"en":[{"name":"Tanabe Shinichi"},{"name":"Sekine Yoshiaki"},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"},{"name":"Hibino Hiroki"}],"ja":[{"name":"田邉 真一"},{"name":"関根 佳明"},{"name":"影島 博之"},{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"}]},"publication_date":"2011-09-27","publication_name":{"en":"Physical Review B, Condensed Matter and Materials Physics","ja":"Physical Review B, Condensed Matter and Materials Physics"},"volume":"Vol.84","number":"No.11","starting_page":"115458","ending_page":"(5pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1103/PhysRevB.84.115458"],"issn":["1098-0121"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:29, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000057913/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1360566399838670592/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=240810","label":"url"}],"paper_title":{"en":"Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface","ja":"Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Yamaguchi Hiroshi"},{"name":"Nagase Masao"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"山口 浩司"},{"name":"永瀬 雅夫"}]},"description":{"en":"The growth of epitaxial graphene on the SiC(0001) surface is theoretically studied by assuming silicon (Si) sublimation from the surface. Our results indicate that a new graphene sheet grows from the interface between the old graphene sheets and SiC substrate, as found in our previous study on graphene growth by carbon (C) deposition. Graphene growth requires overcoming rather lower energy barriers until 0-monolayer graphene (buffer layer) is formed. Further growth toward formation of 1-monolayer graphene requires overcoming energy barriers higher by about 0.7 eV, which indicates that the growth preferably stops once when 0-monolayer graphene is formed. Compared with the C deposition case, the growth requires overcoming the energy barrier higher by about 0.7 eV, which indicates that the graphene growth is more difficult. In addition, the nonuniform growth of surface C aggregates is thought to degrade the quality of the grown graphene. The C-rich condition is therefore important for obtaining high-quality graphene. The experimental graphene growth is considered to proceed similarly to the C deposition case rather than the Si sublimation case.","ja":"The growth of epitaxial graphene on the SiC(0001) surface is theoretically studied by assuming silicon (Si) sublimation from the surface. Our results indicate that a new graphene sheet grows from the interface between the old graphene sheets and SiC substrate, as found in our previous study on graphene growth by carbon (C) deposition. Graphene growth requires overcoming rather lower energy barriers until 0-monolayer graphene (buffer layer) is formed. Further growth toward formation of 1-monolayer graphene requires overcoming energy barriers higher by about 0.7 eV, which indicates that the growth preferably stops once when 0-monolayer graphene is formed. Compared with the C deposition case, the growth requires overcoming the energy barrier higher by about 0.7 eV, which indicates that the graphene growth is more difficult. In addition, the nonuniform growth of surface C aggregates is thought to degrade the quality of the grown graphene. The C-rich condition is therefore important for obtaining high-quality graphene. The experimental graphene growth is considered to proceed similarly to the C deposition case rather than the Si sublimation case."},"publication_date":"2011-09-20","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.50","number":"No.9","starting_page":"095601","ending_page":"(6pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.50.095601"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:30, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000057518/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1360847871786466560/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=231525","label":"url"}],"paper_title":{"en":"Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices","ja":"Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Nagase Masao"},{"name":"Sekine Yoshiaki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"永瀬 雅夫"},{"name":"関根 佳明"},{"name":"山口 浩司"}]},"description":{"en":"Two of our recent theoretical efforts on elucidating the functions of graphene are reported. A first-principles calculation of the growth process of graphene islands on SiC(0001) shows that an embedded structure is energetically preferable. Island with this embedded structure do not have any broken dangling bonds at their edges. Their electronic states clearly show that they surely act as islands. Islands with zigzag edges have edge-localized states, which causes magnetoelectric effects. Graphene is also expected as a highly efficient material for thermoelectric elements according to a theoretical study. If the carrier scattering sources are adequately suppressed, the thermoelectric figure of merit greatly exceeds 1 at temperatures higher than 300 K with the Fermi energy fixed around the Dirac point. Since graphene is cheaper, resource abundant, more harmless, higher in melting temperature, and much lighter in density, than the present typical material, BiTe/Sb, many new applications could be considered.","ja":"Two of our recent theoretical efforts on elucidating the functions of graphene are reported. A first-principles calculation of the growth process of graphene islands on SiC(0001) shows that an embedded structure is energetically preferable. Island with this embedded structure do not have any broken dangling bonds at their edges. Their electronic states clearly show that they surely act as islands. Islands with zigzag edges have edge-localized states, which causes magnetoelectric effects. Graphene is also expected as a highly efficient material for thermoelectric elements according to a theoretical study. If the carrier scattering sources are adequately suppressed, the thermoelectric figure of merit greatly exceeds 1 at temperatures higher than 300 K with the Fermi energy fixed around the Dirac point. Since graphene is cheaper, resource abundant, more harmless, higher in melting temperature, and much lighter in density, than the present typical material, BiTe/Sb, many new applications could be considered."},"publication_date":"2011-07-20","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.50","number":"No.7","starting_page":"070115","ending_page":"(5pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.50.070115"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:31, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=230971","label":"url"}],"paper_title":{"en":"X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections","ja":"X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections"},"authors":{"en":[{"name":"Takeuchi Teruaki"},{"name":"Tatsumura Kosuke"},{"name":"Ohdomari Iwao"},{"name":"Shimura Takayoshi"},{"name":"Nagase Masao"}],"ja":[{"name":"Takeuchi Teruaki"},{"name":"Tatsumura Kosuke"},{"name":"Ohdomari Iwao"},{"name":"Shimura Takayoshi"},{"name":"永瀬 雅夫"}]},"publication_date":"2011-07-01","publication_name":{"en":"Physica B : Condensed Matter","ja":"Physica B : Condensed Matter"},"volume":"Vol.406","number":"No.13","starting_page":"2559","ending_page":"2564","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1016/j.physb.2011.03.064"],"issn":["0921-4526"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:32, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000055675/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1360003446856179712/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=228185","label":"url"}],"paper_title":{"en":"Observation of band gap in epitaxial bilayer graphene field effect transistors","ja":"Observation of band gap in epitaxial bilayer graphene field effect transistors"},"authors":{"en":[{"name":"Tanabe Shinichi"},{"name":"Sekine Yoshiaki"},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"},{"name":"Hibino Hiroki"}],"ja":[{"name":"田邉 真一"},{"name":"関根 佳明"},{"name":"影島 博之"},{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"}]},"description":{"en":"Bilayer graphene was grown on the Si-face of SiC by thermal decomposition. Its electronic properties were investigated in top-gate Hall bar devices. By controlling the carrier density using gate voltage, we were able to access the charge neutrality point. The conductance at the charge neutrality point showed a strong temperature dependence, and its temperature dependence was well fitted with thermal activation and variable-range hopping mechanisms. The electrical detection of a band gap opening in bilayer graphene grown on SiC is a promising step toward the realization of graphene-based electronics using epitaxial graphene.","ja":"Bilayer graphene was grown on the Si-face of SiC by thermal decomposition. Its electronic properties were investigated in top-gate Hall bar devices. By controlling the carrier density using gate voltage, we were able to access the charge neutrality point. The conductance at the charge neutrality point showed a strong temperature dependence, and its temperature dependence was well fitted with thermal activation and variable-range hopping mechanisms. The electrical detection of a band gap opening in bilayer graphene grown on SiC is a promising step toward the realization of graphene-based electronics using epitaxial graphene."},"publication_date":"2011-04-20","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.50","number":"No.4","starting_page":"04DN04","ending_page":"(4pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.50.04DN04"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:33, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070011"},"force":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=227565","label":"url"}],"paper_title":{"en":"Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC","ja":"Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC"},"authors":{"en":[{"name":"Tanabe Shinichi"},{"name":"Sekine Yoshiaki"},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"},{"name":"Hibino Hiroki"}],"ja":[{"name":"田邉 真一"},{"name":"関根 佳明"},{"name":"影島 博之"},{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"}]},"publication_date":"2011-04-01","publication_name":{"en":"Materials Research Society Symposia Proceedings","ja":"Materials Research Society Symposia Proceedings"},"volume":"Vol.1283","starting_page":"opl.2011.675","ending_page":"(6pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1557/opl.2011.675"],"issn":["1946-4274"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:34, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=221760","label":"url"}],"paper_title":{"en":"Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding","ja":"Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding"},"authors":{"en":[{"name":"Takashina Kei"},{"name":"Nagase Masao"},{"name":"Nishiguchi K"},{"name":"Ono Y"},{"name":"Omi H"},{"name":"Fujiwara A"},{"name":"Fujisawa T"},{"name":"Muraki K"}],"ja":[{"name":"Takashina Kei"},{"name":"永瀬 雅夫"},{"name":"Nishiguchi K"},{"name":"Ono Y"},{"name":"Omi H"},{"name":"Fujiwara A"},{"name":"Fujisawa T"},{"name":"Muraki K"}]},"publication_date":"2010-11-03","publication_name":{"en":"Semiconductor Science and Technology","ja":"Semiconductor Science and Technology"},"volume":"Vol.25","number":"No.12","starting_page":"125001","ending_page":"(4pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1088/0268-1242/25/12/125001"],"issn":["0268-1242"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:35, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=221758","label":"url"}],"paper_title":{"en":"Epitaxial few-layer graphene: toward single crystal growth","ja":"Epitaxial few-layer graphene: toward single crystal growth"},"authors":{"en":[{"name":"Hibino Hiroki"},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"}],"ja":[{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"永瀬 雅夫"}]},"publication_date":"2010-09-02","publication_name":{"en":"Journal of Physics D: Applied Physics","ja":"Journal of Physics D: Applied Physics"},"volume":"Vol.43","number":"No.37","starting_page":"374005","ending_page":"(14pp)","languages":["eng"],"referee":true,"invited":true,"identifiers":{"doi":["10.1088/0022-3727/43/37/374005"],"issn":["0022-3727"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:36, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.ntt-review.jp/archive/ntttechnical.php?contents=ntr201008rp1.html","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-77955857257&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=221757","label":"url"}],"paper_title":{"en":"Direct Actuation of GaAs Membrane Resonator by Scanning Probe","ja":"Direct Actuation of GaAs Membrane Resonator by Scanning Probe"},"authors":{"en":[{"name":"Nagase Masao"},{"name":"Tamaru Kojiro"},{"name":"Nonaka Keiichiro"},{"name":"Warisawa Shinichi"},{"name":"Ishihara Sunao"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"永瀬 雅夫"},{"name":"田丸 耕二郎"},{"name":"野中 啓一郎"},{"name":"割澤 伸一"},{"name":"石原 直"},{"name":"山口 浩司"}]},"publication_date":"2010-08","publication_name":{"en":"NTT Technical Review","ja":"NTT Technical Review"},"volume":"Vol.8","starting_page":"rp1","ending_page":"(7pp)","languages":["eng"],"referee":true,"invited":true,"identifiers":{"issn":["1348-3447"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:37, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.ntt-review.jp/archive/ntttechnical.php?contents=ntr201008sf4.html","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-77955896361&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=221756","label":"url"}],"paper_title":{"en":"Graphene Growth on Silicon Carbide","ja":"Graphene Growth on Silicon Carbide"},"authors":{"en":[{"name":"Hibino Hiroki"},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"}],"ja":[{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"永瀬 雅夫"}]},"publication_date":"2010-08","publication_name":{"en":"NTT Technical Review","ja":"NTT Technical Review"},"volume":"Vol.8","starting_page":"sf4","ending_page":"(6pp)","languages":["eng"],"referee":true,"invited":true,"identifiers":{"issn":["1348-3447"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:38, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070012"},"force":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=222068","label":"url"}],"paper_title":{"en":"Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles","ja":"Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Nagase Masao"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"永瀬 雅夫"}]},"publication_date":"2010-04-01","publication_name":{"en":"Materials Science Forum","ja":"Materials Science Forum"},"volume":"Vol.645-648","starting_page":"597","ending_page":"602","languages":["eng"],"referee":true,"identifiers":{"doi":["10.4028/www.scientific.net/MSF.645-648.597"],"issn":["1662-9752"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:39, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070013"},"force":{"see_also":[{"@id":"https://www.ncbi.nlm.nih.gov/pubmed/19809118","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=209355","label":"url"}],"paper_title":{"en":"Local Conductance Measurement of Double-layer Graphene on SiC Substrate","ja":"Local Conductance Measurement of Double-layer Graphene on SiC Substrate"},"authors":{"en":[{"name":"Nagase Masao"},{"name":"Hibino Hiroki"},{"name":"Kageshima Hiroyuki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"山口 浩司"}]},"description":{"en":"The microscopic structural and electrical properties of few-layer graphene grown on an SiC substrate were characterized by low-energy electron microscopy, transmission electron microscopy and scanning probe microscopy measurements of local conductance. The double-layer graphene sheet was confirmed to be continuous across the atomic steps on the buried SiC substrate surface, and the measured local conductance was clearly modified in the vicinity of the steps. The conductance decreased (slightly increased) at the lower (upper) side of the steps, suggesting deformation-induced strain is the origin of the conductance modification. From the contact force dependence of the conductance images, the effective contact areas for both nanogap-probe and point-probe measurements were estimated.","ja":"The microscopic structural and electrical properties of few-layer graphene grown on an SiC substrate were characterized by low-energy electron microscopy, transmission electron microscopy and scanning probe microscopy measurements of local conductance. The double-layer graphene sheet was confirmed to be continuous across the atomic steps on the buried SiC substrate surface, and the measured local conductance was clearly modified in the vicinity of the steps. The conductance decreased (slightly increased) at the lower (upper) side of the steps, suggesting deformation-induced strain is the origin of the conductance modification. From the contact force dependence of the conductance images, the effective contact areas for both nanogap-probe and point-probe measurements were estimated."},"publication_date":"2009-10-07","publication_name":{"en":"Nanotechnology","ja":"Nanotechnology"},"volume":"Vol.20","number":"No.44","starting_page":"445704","ending_page":"(6pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1088/0957-4484/20/44/445704"],"issn":["1361-6528"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:40, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=209360","label":"url"}],"paper_title":{"en":"Stacking domains of epitaxial few-layer graphene on SiC(0001)","ja":"Stacking domains of epitaxial few-layer graphene on SiC(0001)"},"authors":{"en":[{"name":"Hibino Hiroki"},{"name":"Mizuno S"},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"日比野 浩樹"},{"name":"Mizuno S"},{"name":"影島 博之"},{"name":"永瀬 雅夫"},{"name":"山口 浩司"}]},"publication_date":"2009-08-06","publication_name":{"en":"Physical Review B, Condensed Matter and Materials Physics","ja":"Physical Review B, Condensed Matter and Materials Physics"},"volume":"Vol.80","number":"No.8","starting_page":"085406","ending_page":"(6pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1103/PhysRevB.80.085406"],"issn":["1098-0121"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:41, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000052438/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1520572357496822144/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=209375","label":"url"}],"paper_title":{"en":"Evaluation of Thermal Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy","ja":"Evaluation of Thermal Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy"},"authors":{"en":[{"name":"Nonaka Keiichiro"},{"name":"Tamaru Kojiro"},{"name":"Nagase Masao"},{"name":"Yamaguchi Hiroshi"},{"name":"Warisawa Shinichi"},{"name":"Ishihara Sunao"}],"ja":[{"name":"野中 啓一郎"},{"name":"田丸 耕二郎"},{"name":"永瀬 雅夫"},{"name":"山口 浩司"},{"name":"割澤 伸一"},{"name":"石原 直"}]},"description":{"en":"We describe a method for evaluating thermal mechanical vibration amplitude by means of analysis of scanning electron microscopy images. The samples used were carbon nanopillars of different heights grown by focused-ion-beam-induced chemical vapor deposition. The secondary electron yield profile of carbon nanopillars excited by thermal noise is modeled, and vibration amplitude is determined by fitting the modeled profile to the experimental profile. The Young's modulus of carbon nanopillars is deduced from the determined amplitude. Furthermore, the density of carbon nanopillars is estimated from the deduced Young's modulus and the measured resonant frequency. The obtained Young's moduli and densities range from 51 to 78 GPa and from 2500 to 3500 kg/m3, respectively.","ja":"We describe a method for evaluating thermal mechanical vibration amplitude by means of analysis of scanning electron microscopy images. The samples used were carbon nanopillars of different heights grown by focused-ion-beam-induced chemical vapor deposition. The secondary electron yield profile of carbon nanopillars excited by thermal noise is modeled, and vibration amplitude is determined by fitting the modeled profile to the experimental profile. The Young's modulus of carbon nanopillars is deduced from the determined amplitude. Furthermore, the density of carbon nanopillars is estimated from the deduced Young's modulus and the measured resonant frequency. The obtained Young's moduli and densities range from 51 to 78 GPa and from 2500 to 3500 kg/m3, respectively."},"publication_date":"2009-06-22","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.48","number":"No.6","starting_page":"06FG07","ending_page":"(5pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.48.06FG07"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:42, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000052437/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1360284921831516800/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=209371","label":"url"}],"paper_title":{"en":"Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy","ja":"Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy"},"authors":{"en":[{"name":"Tamaru Kojiro"},{"name":"Nonaka Keiichiro"},{"name":"Nagase Masao"},{"name":"Yamaguchi Hiroshi"},{"name":"Warisawa Shinichi"},{"name":"Ishihara Sunao"}],"ja":[{"name":"田丸 耕二郎"},{"name":"野中 啓一郎"},{"name":"永瀬 雅夫"},{"name":"山口 浩司"},{"name":"割澤 伸一"},{"name":"石原 直"}]},"description":{"en":"A method for evaluating the dynamic characteristics of micro- and nanoresonators with high spatial resolution is proposed. The mechanical resonance of circular micromembrane resonators is directly induced by voltage applied from the microprobe of a scanning probe microscopy (SPM) system. The vibration amplitude is simultaneously detected as height information by SPM. Experimentally, the resonant properties of fundamental and higher-order modes of 200-nm-thick GaAs micromembranes were measured. The frequency of the highest mode is 3.4 MHz and its resonant amplitude is about 1 nm. The resonant amplitude increases with increasing actuation voltage in a linear manner at voltages below 180 mV. Large actuation voltage induces nonlinear vibration with the spring soften effect, which originates from the strong attractive force induced by the electronic field between the probe and membrane. The high tapping force, which is repulsive, induces another type of nonlinear vibration caused by the spring harden effect. The simultaneous actuation and detection for mechanical resonators based on SPM technology reveals the characteristics of the mechanical interaction force between the micromembrane and microprobe.","ja":"A method for evaluating the dynamic characteristics of micro- and nanoresonators with high spatial resolution is proposed. The mechanical resonance of circular micromembrane resonators is directly induced by voltage applied from the microprobe of a scanning probe microscopy (SPM) system. The vibration amplitude is simultaneously detected as height information by SPM. Experimentally, the resonant properties of fundamental and higher-order modes of 200-nm-thick GaAs micromembranes were measured. The frequency of the highest mode is 3.4 MHz and its resonant amplitude is about 1 nm. The resonant amplitude increases with increasing actuation voltage in a linear manner at voltages below 180 mV. Large actuation voltage induces nonlinear vibration with the spring soften effect, which originates from the strong attractive force induced by the electronic field between the probe and membrane. The high tapping force, which is repulsive, induces another type of nonlinear vibration caused by the spring harden effect. The simultaneous actuation and detection for mechanical resonators based on SPM technology reveals the characteristics of the mechanical interaction force between the micromembrane and microprobe."},"publication_date":"2009-06-22","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.48","number":"No.6","starting_page":"06FG06","ending_page":"(5pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.48.06FG06"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:43, {"insert":{"user_id":"B000333895","type":"published_papers","id":"44259518"},"force":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=404290","label":"url"}],"paper_title":{"en":"高電圧印加によるグラフェン積層接合の抵抗変化","ja":"高電圧印加によるグラフェン積層接合の抵抗変化"},"authors":{"en":[{"name":"Ohi MOTOKI"},{"name":"Murakami Hayate"},{"name":"Kohsuke KUBO"},{"name":"Takeru NAKAGAWA"},{"name":"Ohno Yasuhide"},{"name":"Nagase Masao"},{"name":"影島 博之"}],"ja":[{"name":"大井 基暉"},{"name":"村上 隼瑛"},{"name":"久保 倖介"},{"name":"中川 剛瑠"},{"name":"大野 恭秀"},{"name":"永瀬 雅夫"},{"name":"影島 博之"}]},"publication_date":"2023-11-07","publication_name":{"en":"第15回「集積化MEMSシンボジウム」","ja":"第15回「集積化MEMSシンボジウム」"},"starting_page":"6P4-D-2","ending_page":"(5pp)","languages":["jpn"],"published_paper_type":"research_institution"},"priority":"input_data"}
line:44, {"insert":{"user_id":"B000333895","type":"published_papers","id":"40578229"},"force":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=392999","label":"url"}],"paper_title":{"en":"グラフェン積層接合への高電界印加による抵抗状態遷移","ja":"グラフェン積層接合への高電界印加による抵抗状態遷移"},"authors":{"en":[{"name":"Fukunaga Fumiya"},{"name":"Ohi MOTOKI"},{"name":"Murakami Hayate"},{"name":"Ohno Yasuhide"},{"name":"Nagase Masao"}],"ja":[{"name":"福永 郁也"},{"name":"大井 基暉"},{"name":"村上 隼瑛"},{"name":"大野 恭秀"},{"name":"永瀬 雅夫"}]},"publication_date":"2022-11-07","publication_name":{"en":"第14回「集積化MEMSシンボジウム」","ja":"第14回「集積化MEMSシンボジウム」"},"starting_page":"14P2-C-2","ending_page":"(5pp)","languages":["jpn"],"published_paper_type":"research_institution"},"priority":"input_data"}
line:45, {"insert":{"user_id":"B000333895","type":"published_papers","id":"40578230"},"force":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=392998","label":"url"}],"paper_title":{"en":"SiC 基板上短冊状グラフェンからの遠赤外線放射の観測","ja":"SiC 基板上短冊状グラフェンからの遠赤外線放射の観測"},"authors":{"en":[{"name":"Kataoka Taichi"},{"name":"Kuhara TAKUMA"},{"name":"Ohno Yasuhide"},{"name":"Nagase Masao"}],"ja":[{"name":"片岡 大治"},{"name":"久原 拓真"},{"name":"大野 恭秀"},{"name":"永瀬 雅夫"}]},"publication_date":"2022-11-07","publication_name":{"en":"第14回「集積化MEMSシンボジウム」","ja":"第14回「集積化MEMSシンボジウム」"},"starting_page":"14P2-C-3","ending_page":"(6pp)","languages":["jpn"],"published_paper_type":"research_institution"},"priority":"input_data"}
line:46, {"insert":{"user_id":"B000333895","type":"published_papers","id":"34254374"},"force":{"see_also":[{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/116404","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-85116860594&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=382735","label":"url"}],"paper_title":{"en":"Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate","ja":"Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate"},"authors":{"en":[{"name":"Nagase Masao"}],"ja":[{"name":"永瀬 雅夫"}]},"publication_date":"2021-10-20","publication_name":{"en":"ECS Transactions","ja":"ECS Transactions"},"volume":"Vol.104","number":"No.(4)","starting_page":"27","ending_page":"31","languages":["eng"],"invited":true,"identifiers":{"doi":["10.1149/10404.0027ecst"],"issn":["1938-6737"]},"published_paper_type":"research_institution"},"priority":"input_data"}
line:47, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://ci.nii.ac.jp/naid/130006038632/","label":"url"},{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/110893","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1390001204560676352/","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-85029230569&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=333453","label":"url"}],"paper_title":{"en":"Heterogeneous Integration on Graphene Substrate --- 特集/Heterogeneous Integration","ja":"グラフェン基板上への異種機能集積化について --- 特集/Heterogeneous Integration"},"authors":{"en":[{"name":"Nagase Masao"}],"ja":[{"name":"永瀬 雅夫"}]},"publication_date":"2017-09-01","publication_name":{"en":"Journal of Japan Institute of Electronics Packaging","ja":"エレクトロニクス実装学会誌"},"volume":"Vol.20","number":"No.6","starting_page":"382","ending_page":"386","languages":["jpn"],"invited":true,"identifiers":{"doi":["10.5104/jiep.20.382"],"issn":["1343-9677"]},"published_paper_type":"research_institution"},"priority":"input_data"}
line:48, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070014"},"force":{"see_also":[{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/111035","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1050564287419674496/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=307337","label":"url"}],"paper_title":{"en":"Study on Fabrication Method of High Quality Graphene","ja":"高品質グラフェン作製技術の研究"},"authors":{"en":[{"name":"Nagase Masao"}],"ja":[{"name":"永瀬 雅夫"}]},"description":{"en":"This report describes formation and eva","ja":"This report describes formation and eva"},"publication_date":"2015-04","publication_name":{"en":"Bulletin of Institute of Technology and Science, The University of Tokushima","ja":"徳島大学大学院ソシオテクノサイエンス研究部研究報告"},"volume":"Vol.60","starting_page":"1","ending_page":"10","languages":["jpn"],"invited":true,"identifiers":{"issn":["2185-9094"]},"published_paper_type":"research_institution"},"priority":"input_data"}
line:49, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://www.lib.tokushima-u.ac.jp/repository/metadata/105974","label":"url"},{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/105974","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1050564287418283264/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=292400","label":"url"}],"paper_title":{"en":"Study on Graphene Composite Properties for New Functional Devices","ja":"グラフェン複合物性の機能デバイス化技術の研究"},"authors":{"en":[{"name":"Nagase Masao"}],"ja":[{"name":"永瀬 雅夫"}]},"description":{"en":"This study describes formation and evaluation techniques of graphene on SiC for new functional devices using composite properties. A new layer number determination technique for graphene on SiC was established using microscopic Raman spectroscopy. Growth mechanism of graphene was revealed by detailed image analysis of scanning probe microscopy (SPM). Highly uniform single-layer single-crystal graphene was successfully grown on SiC substrate of 10 mm-sq size. New methods for mechanical and electrical properties of graphene were also developed. Friction force of graphene on SiC was evaluated using friction force microscopy. Contact conductance properties were measured using conductive nanoprobes on SPM.","ja":"This study describes formation and evaluation techniques of graphene on SiC for new functional devices using composite properties. A new layer number determination technique for graphene on SiC was established using microscopic Raman spectroscopy. Growth mechanism of graphene was revealed by detailed image analysis of scanning probe microscopy (SPM). Highly uniform single-layer single-crystal graphene was successfully grown on SiC substrate of 10 mm-sq size. New methods for mechanical and electrical properties of graphene were also developed. Friction force of graphene on SiC was evaluated using friction force microscopy. Contact conductance properties were measured using conductive nanoprobes on SPM."},"publication_date":"2013-04","publication_name":{"en":"Bulletin of Institute of Technology and Science, The University of Tokushima","ja":"徳島大学大学院ソシオテクノサイエンス研究部研究報告"},"volume":"Vol.58","starting_page":"13","ending_page":"21","languages":["jpn"],"invited":true,"identifiers":{"issn":["2185-9094"]},"published_paper_type":"research_institution"},"priority":"input_data"}
line:50, {"insert":{"user_id":"B000333895","type":"published_papers","id":"31070015"},"force":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/110007338353/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1520009409275212800/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=209365","label":"url"}],"paper_title":{"en":"Metrology of microscopic properties of graphene on SiC --- [Invited Paper]","ja":"Metrology of microscopic properties of graphene on SiC --- [Invited Paper]"},"authors":{"en":[{"name":"Nagase Masao"},{"name":"Hibino Hiroki"},{"name":"Kageshima Hiroyuki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"山口 浩司"}]},"description":{"en":"Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown epitaxial graphene on SiC substrate is promising for future electronic devices because of its compatibility with existing wafer-scale manufacturing. In this paper, microscopic metrological methods for graphene on SiC will be discussed. A layer number determination method using low-energy electron microscopy (LEEM) enables us to control the layer number and morphology of few-layer graphene. Local conductance measurements using an integrated nanogap probe based on scanning probe microscopy reveal the electrical properties of graphene nanoislands and double-layer graphene sheets on SiC.","ja":"Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown epitaxial graphene on SiC substrate is promising for future electronic devices because of its compatibility with existing wafer-scale manufacturing. In this paper, microscopic metrological methods for graphene on SiC will be discussed. A layer number determination method using low-energy electron microscopy (LEEM) enables us to control the layer number and morphology of few-layer graphene. Local conductance measurements using an integrated nanogap probe based on scanning probe microscopy reveal the electrical properties of graphene nanoislands and double-layer graphene sheets on SiC."},"publication_date":"2009-06-02","publication_name":{"en":"IEICE Technical Report","ja":"IEICE Technical Report"},"volume":"Vol.109","number":"No.97","starting_page":"47","ending_page":"52","languages":["eng"],"invited":true,"identifiers":{"issn":["0913-5685"]},"published_paper_type":"research_institution"},"priority":"input_data"}
line:51, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=321585","label":"url"}],"paper_title":{"en":"Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice","ja":"Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice"},"authors":{"en":[{"name":"Katsuhiko Nishiguchi"},{"name":"Daisuke Yoshizumi"},{"name":"Yoshiaki Sekine"},{"name":"Kazuaki Furukawa"},{"name":"Akira Fujiwara"},{"name":"Nagase Masao"}],"ja":[{"name":"Katsuhiko Nishiguchi"},{"name":"Daisuke Yoshizumi"},{"name":"Yoshiaki Sekine"},{"name":"Kazuaki Furukawa"},{"name":"Akira Fujiwara"},{"name":"永瀬 雅夫"}]},"publication_date":"2016-09-08","publication_name":{"en":"Applied Physics Express","ja":"Applied Physics Express"},"volume":"Vol.9","number":"No.10","starting_page":"105101","ending_page":"(4pp)","languages":["eng"],"identifiers":{"doi":["10.7567/APEX.9.105101"],"issn":["1882-0778"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:52, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/110900","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-84923975338&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=290748","label":"url"}],"paper_title":{"en":"Resistivity anisotropy measured using four probes in epitaxial graphene on silicon carbide","ja":"Resistivity anisotropy measured using four probes in epitaxial graphene on silicon carbide"},"authors":{"en":[{"name":"Kobayashi Keisuke"},{"name":"Tanabe Shinichi"},{"name":"Tao Takuto"},{"name":"Okumura Toshio"},{"name":"Nakashima Takeshi"},{"name":"Aritsuki Takuya"},{"name":"O Ryong-Sok"},{"name":"Nagase Masao"}],"ja":[{"name":"小林 慶祐"},{"name":"田邉 真一"},{"name":"田尾 拓人"},{"name":"奥村 俊夫"},{"name":"中島 健志"},{"name":"有月 琢哉"},{"name":"呉 龍錫"},{"name":"永瀬 雅夫"}]},"publication_date":"2015-02-26","publication_name":{"en":"Applied Physics Express","ja":"Applied Physics Express"},"volume":"Vol.8","number":"No.2","starting_page":"036602","ending_page":"(3pp)","languages":["eng"],"identifiers":{"doi":["10.7567/APEX.8.036602"],"issn":["1882-0778"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:53, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://repo.lib.tokushima-u.ac.jp/110901","label":"url"},{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/110901","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1050564287419648896/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=261487","label":"url"}],"paper_title":{"en":"Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio","ja":"Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio"},"authors":{"en":[{"name":"Nagase Masao"},{"name":"Hibino Hiroki"},{"name":"Kageshima Hiroyuki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"山口 浩司"}]},"description":{"en":"Locally defined nanomembrane structures can be produced in graphene films on a SiC substrate with atomic steps. The contact conductance between graphene and a metal-coated nanoprobe in scanning probe microscopy can be drastically reduced by inducing local buckling of the membranes. Repeatable current switching with high reproducibility can be realized. The on/off ratio can be varied from about 105 to below 10 by changing the contact force. At a low contact force, the contact conductance changes from 10μS (``ON'' state) to 100pS (``OFF'' state). This novel device structure could represent a new path to electrical switching at the nanoscale.","ja":"Locally defined nanomembrane structures can be produced in graphene films on a SiC substrate with atomic steps. The contact conductance between graphene and a metal-coated nanoprobe in scanning probe microscopy can be drastically reduced by inducing local buckling of the membranes. Repeatable current switching with high reproducibility can be realized. The on/off ratio can be varied from about 105 to below 10 by changing the contact force. At a low contact force, the contact conductance changes from 10μS (``ON'' state) to 100pS (``OFF'' state). This novel device structure could represent a new path to electrical switching at the nanoscale."},"publication_date":"2013-04-15","publication_name":{"en":"Applied Physics Express","ja":"Applied Physics Express"},"volume":"Vol.6","number":"No.4","starting_page":"055101","ending_page":"(3pp)","languages":["eng"],"identifiers":{"doi":["10.7567/APEX.6.055101"],"issn":["1882-0778"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:54, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/10027442141/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1522543655014226048/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=221759","label":"url"}],"paper_title":{"en":"Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces","ja":"Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Nagase Masao"},{"name":"Sekine Yoshiaki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"永瀬 雅夫"},{"name":"関根 佳明"},{"name":"山口 浩司"}]},"description":{"en":"The atomic structures of graphene islands on SiC(0001) surfaces are studied theoretically together with their growth mechanism. Two types of embedded graphene island structure are proposed. It is shown that these structures actually act as the graphene island electronically, and that those with zigzag edges have the magnetoelectric effect.","ja":"The atomic structures of graphene islands on SiC(0001) surfaces are studied theoretically together with their growth mechanism. Two types of embedded graphene island structure are proposed. It is shown that these structures actually act as the graphene island electronically, and that those with zigzag edges have the magnetoelectric effect."},"publication_date":"2010-11-12","publication_name":{"en":"Applied Physics Express","ja":"Applied Physics Express"},"volume":"Vol.3","number":"No.11","starting_page":"115103","ending_page":"(3pp)","languages":["eng"],"identifiers":{"doi":["10.1143/APEX.3.115103"],"issn":["1882-0778"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:55, {"insert":{"user_id":"B000333895","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://apex.ipap.jp/link?APEX/3/075102/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1521417755010341632/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=210929","label":"url"}],"paper_title":{"en":"Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices","ja":"Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices"},"authors":{"en":[{"name":"Tanabe Shinichi"},{"name":"Sekine Yoshiaki"},{"name":"Kageshima Hiroyuki"},{"name":"Nagase Masao"},{"name":"Hibino Hiroki"}],"ja":[{"name":"田邉 真一"},{"name":"関根 佳明"},{"name":"影島 博之"},{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"}]},"description":{"en":"High-quality monolayer graphene was grown on the Si face of SiC by thermal decomposition, and its electrical properties were investigated in top- gated devices. At 2 K, the carrier mobility of the graphene exceeded 10,000 cm2 V 1 s 1 and the half-integer quantum Hall effect was observed. The quantum Hall states were even observed at various carrier densities when top-gate bias was applied. These findings suggest high-quality epitaxial graphene possesses the unique nature of monolayer graphene and is robust against device fabrication, which holds potential for graphene-based electronics applications.","ja":"High-quality monolayer graphene was grown on the Si face of SiC by thermal decomposition, and its electrical properties were investigated in top- gated devices. At 2 K, the carrier mobility of the graphene exceeded 10,000 cm2 V 1 s 1 and the half-integer quantum Hall effect was observed. The quantum Hall states were even observed at various carrier densities when top-gate bias was applied. These findings suggest high-quality epitaxial graphene possesses the unique nature of monolayer graphene and is robust against device fabrication, which holds potential for graphene-based electronics applications."},"publication_date":"2010-07-02","publication_name":{"en":"Applied Physics Express","ja":"Applied Physics Express"},"volume":"Vol.3","number":"No.7","starting_page":"075102","ending_page":"(3pp)","languages":["eng"],"identifiers":{"doi":["10.1143/APEX.3.075102"],"issn":["1882-0778"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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line:7, {"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=221761","label":"url"}],"paper_title":{"en":"SiC 上エピタキシャルグラフェンの成長と評価","ja":"SiC 上エピタキシャルグラフェンの成長と評価"},"authors":{"en":[{"name":"Hibino Hiroki"},{"name":"Kageshima Hiroyuki"},{"name":"田邉 真一"},{"name":"Nagase Masao"},{"name":"水野 清義"}],"ja":[{"name":"日比野 浩樹"},{"name":"影島 博之"},{"name":"田邉 真一"},{"name":"永瀬 雅夫"},{"name":"水野 清義"}]},"publication_date":"2010-11-15","publication_name":{"en":"固体物理","ja":"固体物理"},"volume":"Vol.45","starting_page":"645","ending_page":"655","languages":["jpn"],"invited":true,"misc_type":"introduction_scientific_journal"},"priority":"input_data"}
line:8, {"insert":{"user_id":"B000333895","type":"misc"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/110007817399/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1390282680872867712/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=222415","label":"url"}],"paper_title":{"en":"Theoretical Study of Epitaxial Graphene Growth on SiC(<Special Topic>Growth of Graphen and its Applications)","ja":"SiC上エピタキシャルグラフェン成長の理論検討"},"authors":{"en":[{"name":"Kageshima Hiroyuki"},{"name":"Hibino Hiroki"},{"name":"Nagase Masao"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"影島 博之"},{"name":"日比野 浩樹"},{"name":"永瀬 雅夫"},{"name":"山口 浩司"}]},"description":{"en":"Epitaxial graphene growth on SiC (0001) is studied with the first-principles calculation. The growth process is modeled by the C aggregation on the terrace, and the energetics is studied. Adsorbed C atoms prefer to form sp^2 bonds, and make C-C bonds rather than terminating dangling bonds of the surface Si. Si-terminated surface of the substrate is important to form thin and flat epitaxial graphene sheets. The surface Si atoms act as the catalyst. In addition, a new graphene sheet preferably forms at the interface between the old graphene sheets and the Si-terminated surface of the substrate. This means that the epitaxial graphene growth is the interfacial growth, being different from the general epitaxial growth. It is also found that Si desorption sites trap excess C atoms and grow into graphene islands.","ja":"SiC(0001)面上のエピタキシャルグラフェン成長を,テラス上のC凝集過程と捉えて,そのエナージェティクスを第一原理計算によって追跡した.吸着C原子はsp^2結合を作りやすく,表面Siの未結合手の終端に優先して,C-C結合を形成する.Si終端表面であることは,薄くて平滑なグラフェンシートのエピタキシャル成長にとって重要で,表面Siはあたかも触媒のように作用する.また,新しいグラフェンシートは,常に元からあるグラフェンシートの下の基板Si終端面の上に成長していく界面成長であり,最表面に新しい層ができる通常のエピタキシャル成長とは異なる.さらにSiの脱離サイトは余剰C原子を捕らえ,グラフェン島を形成していくものと考えられる."},"publication_date":"2010-10","publication_name":{"en":"Journal of the Japanese Association for Crystal Growth","ja":"日本結晶成長学会誌"},"volume":"Vol.37","starting_page":"190","ending_page":"195","languages":["jpn"],"invited":true,"identifiers":{"issn":["0385-6275"]},"misc_type":"introduction_scientific_journal"},"priority":"input_data"}
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