Twist angle dependence of graphene-stacked junction characteristics


Energy Harvesting of Deionized Water Droplet Flow over an Epitaxial Graphene Film on a SiC Substrate

This study investigates energy harvesting by a deionized (DI) water droplet flow on an epitaxial graphene film on a SiC substrate. We obtain an epitaxial single-crystal graphene film by annealing a 4H-SiC substrate. Energy harvesting of the solution droplet flow on the graphene surface has been investigated by using NaCl or HCl solutions. This study validates the voltage generated from the DI water flow on the epitaxial graphene film. The maximum generated voltage was as high as 100 mV, which was a quite large value compared with the previous reports. Furthermore, we measure the dependence of flow direction on electrode configuration. The generated voltages are independent of the electrode configuration, indicating that the DI water flow direction is not influenced by the voltage generation for the single-crystal epitaxial graphene film. Based on these results, the origin of the voltage generation on the epitaxial graphene film is not only an outcome of the fluctuation of the electrical-double layer, resulting in the breaking of the uniform balance of the surface charges, but also other factors such as the charges in the DI water or frictional electrification. In addition, the buffer layer has no effect on the epitaxial graphene film on the SiC substrate.


Resistive-switching behavior in graphene-stacked diode


Electron transfer characteristics of amino acid adsorption on epitaxial graphene FETs on SiC substrates


Graphene/AlGaN Schottky barrier photodiodes and its application for array devices


Far-infrared emission from graphene on SiC by current injection


Thermal desorption of structured water layer on epitaxial graphene


Charge-independent protein adsorption characteristics of epitaxial graphene field-effect transistor on SiC substrate


Blackbody-like infrared radiation in stacked graphene P-N junction diode

Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)


High Stability of Epitaxial Graphene on a SiC Substrate

Physica Status Solidi (B) Basic Solid State Physics : PSS


Observation of the interaction between avidin and iminobiotin using a graphene FET on a SiC substrate


Vertically stacked graphene tunnel junction with structured water barrier


Suppression of protein adsorption on a graphene surface by phosphorylcholine functionalization


Universal Conductance Fluctuation Due to Development of Weak Localization in Monolayer Graphene


Effects of low temperature buffer on carbon nano walls growth


Improved sensitivity of a graphene FET biosensor using porphyrin linkers


Peptide aptamer-modified single-walled carbon nanotube-based transistors for high-performance biosensors

Biosensors employing single-walled carbon nanotube field-effect transistors (SWCNT FETs) offer ultimate sensitivity. However, besides the sensitivity, a high selectivity is critically important to distinguish the true signal from interference signals in a non-controlled environment. This work presents the first demonstration of the successful integration of a novel peptide aptamer with a liquid-gated SWCNT FET to achieve highly sensitive and specific detection of Cathepsin E (CatE), a useful prognostic biomarker for cancer diagnosis. Novel peptide aptamers that specifically recognize CatE are engineered by systemic in vitro evolution. The SWCNTs were firstly grown using the thermal chemical vapor deposition (CVD) method and then were employed as a channel to fabricate a SWCNT FET device. Next, the SWCNTs were functionalized by noncovalent immobilization of the peptide aptamer using 1-pyrenebutanoic acid succinimidyl ester (PBASE) linker. The resulting FET sensors exhibited a high selectivity (no response to bovine serum albumin and cathepsin K) and label-free detection of CatE at unprecedentedly low concentrations in both phosphate-buffered saline (2.3 pM) and human serum (0.23 nM). Our results highlight the use of peptide aptamer-modified SWCNT FET sensors as a promising platform for near-patient testing and point-of-care testing applications.


Ion sensitivity of large-area epitaxial graphene film on SiC substrate


Carrier doping effect of humidity for single-crystal graphene on SiC


Relationship between conductance fluctuation and weak localization in graphene


Fabrication of hydrophilic graphene film by molecular functionalization


Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates


Epitaxial graphene on SiC formed by the surface structure control technique

The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 °C for 5 min in 100 Torr Ar ambient had a maximum value of 2089 cm2 V%1 s%1. We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure.

Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)


Graphene-FET-based gas sensor properties depending on substrate surface conditions


Dual-Gated Topological Insulator Thin-Film Device for Efficient Fermi-Level Tuning

Observations of novel quantum phenomena expected for three-dimensional topological insulators (TIs) often require fabrications of thin-film devices and tuning of the Fermi level across the Dirac point. Since thin films have both top and bottom surfaces, an effective control of the surface chemical potential requires dual gating. However, a reliable dual-gating technique for TI thin films has not yet been developed. Here we report a comprehensive method to fabricate a dual-gated TI device and demonstrate tuning of the chemical potential of both surfaces across the Dirac points. The most important part of our method is the recipe for safely detaching high-quality, bulk-insulating (Bi(1-x)Sb(x))2Te3 thin films from sapphire substrates and transferring them to Si/SiO2 wafers that allow back gating. Fabrication of an efficient top gate by low-temperature deposition of a SiN(x) dielectric complements the procedure. Our dual-gated devices are shown to be effective in tuning the chemical potential in a wide range encompassing the Dirac points on both surfaces.


Effect of the Inert Gas Adsorption on the Bilayer Graphene to the Localized Electron Magnetotransport


Direct graphene synthesis on a Si/SiO2 substrate by a simple annealing process


Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process

e-Journal of Surface Science and Nanotechnology


Top gating of epitaxial (Bi1-xSbx)2Te3 topological insulator thin films


Raman spectral mapping of self-aligned carbon nanowalls


Characterization of reduced graphene oxide field-effect transistor and its application to biosensor


Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots


Recent advances in functional graphene biosensors


Enhancement of ElectronPhonon Interaction by Band-Gap Opening in Bilayer Graphene

Journal of the Physical Society of Japan


SiliconNitride-Passivated Bottom-Up Single-Electron Transistors


Floating-bridge structure of graphene with ionic-liquid gate

Physica Status Solidi (C) Current Topics in Solid State Physics


Position-Controlled Direct Graphene Synthesis on Silicon Oxide Surfaces Using Laser Irradiation


pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array


Selective ion sensors based on ionophore-modified graphene field-effect transistors


Horizontally Aligned Carbon Nanotubes on a Quartz Substrate for Chemical and Biological Sensing


Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy


Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment


Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes


Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition


Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics


Electric-field-induced band gap of bilayer graphene in ionic liquid

Journal of Vacuum Science & Technology B


Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators


Schottky barrier control gate-type carbon nanotube field-effect transistor biosensors


Fabrication of new single-walled carbon nanotubes microelectrode for electrochemical sensors application


Layer-by-layer growth of graphene layers on graphene substrates by chemical vapor deposition


Label-Free Aptamer-Based Immunoglobulin Sensors Using Graphene Field-Effect Transistors


Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition


Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks


Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors


External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor


Quantized characteristics in carbon nanotube-based single-hole memory with a floating nanodot gate


Label-Free Biosensors Based on Aptamer-Modified Graphene Field-Effect Transistors

Journal of the American Chemical Society


Enhancement of weak-signal response based on stochastic resonance in carbon nanotube field-effect transistors


Chemical and biological sensing applications based on graphene field-effect transistors


Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory


Raman Scattering of Single-Walled Carbon Nanotubes in Early Growth Stages Using Laser-Irradiated Chemical Vapor Deposition


Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films


Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates


Cobalt Nano Particle Size Dependence of Noise Modulations in Relation to Nonlinearity

e-Journal of Surface Science and Nanotechnology


Robust Noise Modulation of Nonlinearity in Carbon Nanotube Field-Effect Transistors


Electrical Detection of Negatively Charged Proteins Using n-Type Carbon Nanotube Field-Effect Transistor Biosensors


Improvement in Performance of Carbon Nanotube Field-Effect Transistors on Patterned SiO2/Si Substrates


Highly Sensitive Biosensors Based on High-Performance Carbon Nanotube Field-Effect Transistors


Fabrication of Room-Temperature-Operating Carbon Nanotube Single-Charge Transistors


Electrolyte-Gated Graphene Field-Effect Transistors for Detecting pH and Protein Adsorption


Noise Reduction of Carbon Nanotube Field-Effect Transistor Biosensors by Alternating Current Measurement


Carbon Nanotube FabryPerot Device for Detection of Multiple Single Charge Transitions


Room-temperature-operating carbon nanotube single-hole transistors with significantly small gate and tunnel capacitances


Transition between Particle Nature and Wave Nature in Single-Walled Carbon Nanotube Device


Electrical characterization of carbon nanotube field-effect transistors with passivation films deposited by catalytic chemical vapor deposition


Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators


Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process


High-Performance Carbon Nanotube Field-Effect Transistors with Local Electrolyte Gates


Growth of Suspended Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition


Formation of single quantum dot in single-walled carbon nanotube channel using focused-ion-beam technique


Temperature Scaling Anomalies in Quantum Hall Plateau Transitions with UltraShort Period Lateral Superlattice


Large magnetoresistance in single-walled carbon nanotubes contacted different ferromagnetic metal electrodes


Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions


Position-Controlled Growth of Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition


Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition


Chirality selection of single-walled carbon nanotubes by laser resonance chirality selection method


Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy

Journal of Vacuum Science & Technology B


Cyclotron resonance in corrugated lateral superlattices

Physica E: Low-dimensional Systems and Nanostructures


Cyclotron resonance of ultrashort-period lateral superlattices


Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (7 7 5)B-oriented InP substrate by molecular beam epitaxy


Room temperature oscillation of self-organized In0.2G0.8As/GaAs quantum wire lasers grown on (221)A GaAs substrates by molecular beam epitaxy

Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B


High characteristic temperature (T0=243K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy


Suppression of exchange enhancement of spin gap in quantum Hall systems by ultra-short period lateral superlattice

The Journal of Physics and Chemistry of Solids


Room temperature lasing of quantum wire VCSELs by optical pumping grown on the B GaAs substrates by MBE


Magnetotransport in ultrashort period unidirectional lateral superlattices


Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

Japanese Journal of Applied Physics, Part 2 (Letters)


Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy


Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy


Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)6(AlAs)1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy


In0.53Ga0.47As/In0.52Al0.48As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy


In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy


高電圧印加によるグラフェン積層接合の抵抗変化

高電圧印加によるグラフェン積層接合の抵抗変化

第15回「集積化MEMSシンボジウム」

第15回「集積化MEMSシンボジウム」


グラフェン積層接合への高電界印加による抵抗状態遷移

グラフェン積層接合への高電界印加による抵抗状態遷移

第14回「集積化MEMSシンボジウム」

第14回「集積化MEMSシンボジウム」


SiC 基板上短冊状グラフェンからの遠赤外線放射の観測

SiC 基板上短冊状グラフェンからの遠赤外線放射の観測

第14回「集積化MEMSシンボジウム」

第14回「集積化MEMSシンボジウム」