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Tokushima University > Research Clusters > Research Clusters (Registered) > 1704102 次世代電子デバイスに向けた新機能性材料の作製法の開発 >
Tokushima University > Graduate School of Advanced Technology and Science > Systems Innovation Engineering > Electrical and Electronic Engineering > Material and Device Science >
Tokushima University > Faculty of Engineering > Department of Electrical and Electronic Engineering > Material Science and Device >
(CSV files for researchmap) [PDF manual]

Research Activity

Field of Study

Electronic Devices

Subject of Study

semiconductor device (semiconductor, electron device, monolithic integrated circuit)

Book / Paper

Book:

1.Jin-Ping Ao :
Chapter 6: GaN MOSFET on AlGaN/GaN Heterostructure, Gallium Nitride: Structure, Thermal Properties and Applications,
Nova Science Publishers, Hauppauge, Sep. 2014.
2.Jin-Ping Ao and Yasuo Ohno :
GaN-based Schottky Diodes, Handbook of Light Emitting and Schottky Diode Research,
Nova Science Publishers, Hauppauge, May 2009.

Academic Paper (Judged Full Paper):

1.Xiaobo Li, Taofei Pu, Taiki Hoshi, Tong Zhang, Xie Tian, Shigeki Fujiwara Joseph Luke, Hiroshi Kitahata, Liuan Li, Sachio Kobayashi, Motoo Ito, Xianjie Li and Jin-Ping Ao :
GaN Schottky barrier diodes with nickel nitride anodes sputtered at different nitrogen partial pressure,
Vacuum, Vol.162, 72-77, 2019.
(DOI: 10.1016/j.vacuum.2019.01.030,   Elsevier: Scopus)
2.Yin Yue, Ren Fang, Wang Yunyu, Liu Zhiqiang, Jin-Ping Ao, Liang Meng, Wei Tongbo, Yuan Guodong, Ou Haiyan, Yan Jianchang, Yi Xiaoyan, Wang Junxi and Li Jinmin :
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2,
Materials, Vol.11, 2464-1-2464-9, 2018.
3.Xie Tian, Zheng Tao and Jin-Ping Ao :
Synthesis of copper oxide by reactive magnetron sputtering for photoelectrochemical water splitting,
Advances in Engineering Research, Vol.170, 1055-1061, 2018.
4.Zhang Tong, Wang Lei, Li Xiaobo, Bu Yuyu, Pu Taofei, Wang Ruiling, Li Liuan and Jin-Ping Ao :
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering,
Applied Surface Science, Vol.462, 799-803, 2018.
(DOI: 10.1016/j.apsusc.2018.08.135)
5.Tong Zhang, Taofei Pu, Tian Xie, Liuan Li, Yuyu Bu, Xiao Wang and Jin-Ping Ao :
Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors,
Chinese Physics B, Vol.27, No.7, 078503-1-078503-5, 2018.
(DOI: 10.1088/1674-1056/27/7/078503)
6.Wang Ruiling, Xie Tian, Zhang Tong, Pu Taofei, Bu Yuyu and Jin-Ping Ao :
Fabrication of FTOBiVO4WWO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism,
Journal of Materials Chemistry. A, Materials for Energy and Sustainability, Vol.6, 12956-12961, 2018.
(DOI: 10.1039/c8ta02916d,   Elsevier: Scopus)
7.Pu Taofei, Huang Qian, Zhang Tong, Huang Jiang, Li Xiaomin, Li Liuan, Li Xiaobo, Wang Lei and Jin-Ping Ao :
Normally-off AlGaN/GaN heterostructure junction field-effect transistors with blocking layers,
Superlattices and Microstructures, Vol.120, 448-453, 2018.
(DOI: 10.1016/j.spmi.2018.05.063,   Elsevier: Scopus)
8.Wang Lei, Li Liuan, Xie Tian, Wang Xinzhi, Liu Xinke and Jin-Ping Ao :
Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by magnetron reactive sputtering,
Applied Surface Science, Vol.437, 98-102, 2018.
(DOI: 10.1016/j.apsusc.2017.12.177,   Elsevier: Scopus)
9.Tian Xie, Tao Zheng, Ruiling Wang, Yuyu Bu and Jin-Ping Ao :
Fabrication of CuOx thin-film photocathodes by magnetron reactive sputtering for photoelectrochemical water reduction,
Green Energy & Environment, Vol.3, No.3, 239-246, 2018.
(DOI: 10.1016/j.gee.2018.01.003)
10.Tian Xie, Tao Zheng, Ruiling Wang, Yuyu Bu and Jin-Ping Ao :
Fabrication of CuOx thin-film photocathodes by magnetron reactive sputtering for photoelectrochemical water reduction,
Green Energy & Environment, Vol.3, No.3, 239-246, 2018.
(DOI: 10.1016/j.gee.2018.01.003)
11.Yuyu Bu, Zhuoyuan Chen, Jin-Ping Ao, Jian Hou and Mingxian Sun :
Study of the photoelectrochemical cathodic protection mechanism for steel based on the SrTiO3-TiO2 composite,
Journal of Alloys and Compounds, Vol.730, 1214-1224, 2018.
(DOI: 10.1016/j.jallcom.2017.10.165,   Elsevier: Scopus)
12.Wang Lei, Li Liuan, Zhang Tong, Liu Xinke and Jin-Ping Ao :
Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition,
Applied Surface Science, Vol.427, 1199-1202, 2018.
(DOI: 10.1016/j.apsusc.2017.09.072,   Elsevier: Scopus)
13.Ruiling Wang, Tian Xie, Zhiyong Sun, Taofei Pu and Jin-Ping Ao :
Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance,
RSC Advances, Vol.7, No.81, 51687-51694, 2017.
(DOI: 10.1039/C7RA07988E)
14.Yuyu Bu, Jing Tian, Zhiwei Chen, Fenghui Tian and Jin-Ping Ao :
Optimization of the photoelectrochemical performance of Mo-doped BiVO4 photoanode by controlling the metal-oxygen bonds state on (020) facet,
Advanced Materials Interfaces, Vol.4, No.10, 1601235-1-1601235-9, 2017.
(DOI: 10.1002/admi.201601235)
15.Wang Lei, Bu Yuyu, Li Liuan and Jin-Ping Ao :
pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors with thermal oxidation treatment,
Applied Surface Science, Vol.411, 144-148, 2017.
(DOI: 10.1016/j.apsusc.2017.03.167,   Elsevier: Scopus)
16.Lei Wang, Yuyu Bu and Jin-Ping Ao :
Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive eld-effect transistors,
Diamond and Related Materials, Vol.73, No.3, 1-6, 2017.
(DOI: 10.1016/j.diamond.2016.11.002,   Elsevier: Scopus)
17.Wang Lei, Zhang Jiaqi, Li Liuan, Maeda Yutaro and Jin-Ping Ao :
Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors,
Chinese Physics B, Vol.26, No.3, 037201, 2017.
(DOI: 10.1088/1674-1056/26/3/037201)
18.Bu Yuyu and Jin-Ping Ao :
A Review on Photoelectrochemical Cathodic Protection Semiconductor Thin Films for Metals,
Green Energy & Environment, Vol.2, No.4, 331-362, 2017.
(DOI: 10.1016/j.gee.2017.02.003)
19.Liu Xinke, Liu Qiang, Li Chao, Wang Jianfeng, Yu Wenjie, Xu Ke and Jin-Ping Ao :
1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material,
Japanese Journal of Applied Physics, Vol.56, No.1, 026501-1-026501-5, 2017.
(DOI: 10.7567/JJAP.56.026501,   Elsevier: Scopus)
20.Tong Zhang, Liuan Li and Jin-Ping Ao :
Temperature-dependent electrical transport characteristics of a NiO/GaN heterojunction diode,
Surfaces and Interfaces, Vol.5, 15-18, 2016.
(DOI: 10.1016/j.surfin.2016.08.004)
21.Zhang Jiaqi, Wang Lei, Wang Qingpeng, Jiang Ying, Li Liuan, Zhu Huichao and Jin-Ping Ao :
Self-Aligned-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Titanium Nitride Gate,
Chinese Physics B, Vol.25, No.8, 087308, 2016.
(DOI: 10.1088/1674-1056/25/8/087308)
22.Bu Yuyu, Chen Zhiwei, Xie Tian, Li Weibing and Jin-Ping Ao :
Fabrication of C3N4 ultrathin flakes by mechanical grind method with enhanced photocatalysis and photoelectrochemical performance,
RSC Advances, Vol.6, 47813-47819, 2016.
(DOI: 10.1039/c6ra05524a,   Elsevier: Scopus)
23.Z. Shen, L. He, Jin-Ping Ao, B.J. Zhang and Y. Liu :
Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors,
Physica Status Solidi (A) Applications and Materials Science, Vol.213, No.10, 2693-2698, 2016.
(DOI: 10.1002/pssa.201532785)
24.Li Liuan, Wang Xinzhi, Liu Yang and Jin-Ping Ao :
NiO/GaN heterojunction diode deposited through magnetron reactive sputtering,
Journal of Vacuum Science & Technology A, Vol.34, No.2, 02D104, 2016.
(DOI: 10.1116/1.4937737)
25.Li Liuan, Zhang Jiaqi, Liu Yang and Jin-Ping Ao :
Evaluation of a gate-first process for AlGaN/GaN MOS-HFETs with low ohmic annealing temperature,
Chinese Physics B, Vol.25, No.3, 038503, 2016.
(DOI: 10.1088/1674-1056/25/3/038503)
26.Zhang Jiaqi, Wang Lei, Wang Qingpeng, Jiang Ying, Li Liuan, Zhu Huichao and Jin-Ping Ao :
Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors,
Semiconductor Science and Technology, Vol.31, 035015, 2016.
(DOI: 10.1088/0268-1242/31/3/035015,   Elsevier: Scopus)
27.Jiang Ying, Wang Qingpeng, Zhang Fuzhe, Li Liuan, Shinkai Satoko, Wang Dejun and Jin-Ping Ao :
Device Isolation Using Field Implantation for GaN MOSFETs,
Semiconductor Science and Technology, Vol.31, No.3, 035019, 2016.
(DOI: 10.1088/0268-1242/31/3/035019,   Elsevier: Scopus)
28.Ying Wang, Lin-An Yang, Zhi-Zhe Wang, Jin-Ping Ao and Yue Hao :
The modulation of multi-domain and harmonic wave in GaN planar Gunn diode by recess layer,
Semiconductor Science and Technology, Vol.31, No.2, 025001, 2015.
(DOI: 10.1088/0268-1242/31/2/025001,   Elsevier: Scopus)
29.Jiang Ying, Wang Qingpeng, Zhang Fuzhe, Li Liuan, Zhou Deqiu, Liu Yang, Wang Dejun and Jin-Ping Ao :
Reduction of leakage current by O2plasma treatment for deviceisolation of AlGaN/GaN heterojunction field-effect transistors,
Applied Surface Science, Vol.351, 1155-1160, 2015.
(DOI: 10.1016/j.apsusc.2015.06.092)
30.Wang Qingpeng, Jiang Ying, Zhang Jiaqi, Kawaharada Kazuya, Li Liuan, Wang Dejun and Jin-Ping Ao :
A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process,
Semiconductor Science and Technology, Vol.30, No.7, 075003-1-075003-5, 2015.
(DOI: 10.1088/0268-1242/30/7/075003,   Elsevier: Scopus)
31.Wang Ying, Yang Lin-An, Wang Zhi-Zhe, Jin-Ping Ao and Hao Yue :
The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode,
Physica Status Solidi (A) Applications and Materials Science, Vol.213, No.5, 1252-1258, 2015.
(DOI: 10.1002/pssa.201532703,   Elsevier: Scopus)
32.Qingpeng Wang, Ying Jiang, Jiaqi Zhang, Kazuya Kawaharada, Liuan Li, Dejun Wang and Jin-Ping Ao :
Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure,
Semiconductor Science and Technology, Vol.30, No.6, 065004-1-065004-6, 2015.
(DOI: 10.1088/0268-1242/30/6/065004,   Elsevier: Scopus)
33.Wang Qingpeng, Jin-Ping Ao, Pangpang Wang, Jiang Ying, Li Liuan, Kawaharada Kazuya and Liu Yang :
GaN metal oxide semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate,
Frontiers of Materials Science, Vol.9, No.2, 151-155, 2015.
(DOI: 10.1007/s11706-015-0286-8,   Elsevier: Scopus)
34.Nagaoka Shiro, Horibe Hideo, Jin-Ping Ao and Tagawa Seiichi :
A Fundamental Study of the Electron Beam Lithography Beyond Sub 100nm Process and its Application,
Advanced Materials Research, Vol.1109, 617-625, 2015.
(DOI: 10.4028/www.scientific.net/AMR.1109.617)
35.Li Liuan, Xu Yonggang, Wang Qingpeng, Nakamura Ryosuke, Jiang Ying and Jin-Ping Ao :
Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering,
Semiconductor Science and Technology, Vol.30, No.1, 015019, 2015.
(DOI: 10.1088/0268-1242/30/1/015019,   Elsevier: Scopus)
36.Li Liuan, Kishi Akinori, Liu Qiang, Itai Yuki, Fujihara Ryota, Yasuo Ohno and Jin-Ping Ao :
GaN Schottky Barrier Diode with TiN Electrode for Microwave Rectification,
IEEE Journal of the Electron Devices Society, Vol.2, No.6, 168-173, 2014.
(DOI: 10.1109/JEDS.2014.2346395,   Elsevier: Scopus)
37.Ikawa Yusuke, Lee Keunsam, Jin-Ping Ao and Yasuo Ohno :
Two-dimensional device simulation of GaN/GaN heterojunction FET side-gating effect,
Japanese Journal of Applied Physics, Vol.53, No.11, 114302, 2014.
(DOI: 10.7567/JJAP.53.114302)
38.Yutaro Maeda, Kazutaka Niigata, Kazuhiro Narano, Lei Wang and Jin-Ping Ao :
Surface Dependence of pH Sensors on AlGaN/GaN Heterostructure,
ECS Transactions, Vol.61, No.19, 65-71, 2014.
(DOI: 10.1149/06119.0065ecst)
39.Niigata Kazutaka, Narano Kazuhiro, Maeda Yutaro and Jin-Ping Ao :
Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure,
Japanese Journal of Applied Physics, Vol.53, No.11S, 11RD01-1-11RD01-5, 2014.
(DOI: 10.7567/JJAP.53.11RD01)
40.Li Liuan, Nakamura Ryosuke, Wang Qingpeng, Jiang Ying and Jin-Ping Ao :
Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors,
Nanoscale Research Letters, Vol.9, No.1, 590, 2014.
(DOI: 10.1186/1556-276X-9-590)
41.Wang Qingpeng, Jiang Ying, Miyashita Takahiro, Motoyama Shin-ichi, Li Liuan, Wang Dejun, Yasuo Ohno and Jin-Ping Ao :
Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure,
Solid-State Electronics, Vol.99, 59-64, 2014.
(DOI: 10.1016/j.sse.2014.05.004)
42.Jin-Ping Ao, Shiraishi Takauki, Li Liuan, Kishi Akinori and Yasuo Ohno :
Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices,
Science of Advanced Materials, Vol.6, No.7, 1645-1649, 2014.
(DOI: 10.1166/sam.2014.1936,   Elsevier: Scopus)
43.Jiang Ying, Wang Qingpeng, Tamai Kentaro, Li Liuan, Shinkai Satoko, Miyashita Takahiro, Motoyama Shin-ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation,
Semiconductor Science and Technology, Vol.29, No.5, 055002, 2014.
(DOI: 10.1088/0268-1242/29/5/055002,   Elsevier: Scopus)
44.Shinohara Naoki, Niwa Naoki, Takagi Kenji, Hamamoto Kenniti, Ujigawa Satoshi, Jin-Ping Ao and Yasuo Ohno :
Microwave building as an application of wireless power transfer,
Wireless Power Transfer, Vol.1, No.1, 1-9, 2014.
(DOI: 10.1017/wpt.2014.1)
45.Li Liuan, Kishi Akinori, Shiraishi Takayuki, Jiang Ying, Wang Qingpeng and Jin-Ping Ao :
Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing,
Journal of Vacuum Science & Technology A, Vol.32, No.2, 02B116, 2014.
(DOI: 10.1116/1.4862084,   Elsevier: Scopus)
46.Wang Qingpeng, Jiang Ying, Li Liuan, Wang Dejun, Yasuo Ohno and Jin-Ping Ao :
Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions,
IEEE Transactions on Electron Devices, Vol.61, No.2, 498-504, 2014.
(DOI: 10.1109/TED.2013.2296094,   Elsevier: Scopus)
47.Niigata Kazutaka, Narano Kazuhiro, Maeda Yutaro and Jin-Ping Ao :
pH Sensor on AlGaN/GaN Heterostructure with High Al Mole Fraction,
Frontiers in Sensors (FS), Vol.2, No.1, 10-12, 2014.
48.Yasuo Ohno, Kio Yusuke, Ikawa Yusuke and Jin-Ping Ao :
Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors,
Japanese Journal of Applied Physics, Vol.52, No.7, 08JN28, 2013.
(DOI: 10.7567/JJAP.52.08JN28,   Elsevier: Scopus)
49.Li Liuan, Kishi Akinori, Shiraishi Takayuki, Jiang Ying, Wang Qingpeng, Jin-Ping Ao and Yasuo Ohno :
Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors,
Japanese Journal of Applied Physics, Vol.52, No.4, 11NH01, 2013.
(DOI: 10.7567/JJAP.52.11NH01,   Elsevier: Scopus)
50.Wang Qingpeng, Tamai Kentaro, Miyashita Takahiro, Motoyama Shin-ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Influence of Dry Recess Process on Enhancement-Mode GaN Metal Oxide Semiconductor Field-Effect Transistors,
Japanese Journal of Applied Physics, Vol.52, No.1, 01AG02-1-01AG02-5, 2013.
(DOI: 10.7567/JJAP.52.01AG02,   CiNii: 40019557854,   Elsevier: Scopus)
51.Jiang Ying, Wang Qingpeng, Tamai Kentaro, Miyashita Takahiro, Motoyama Shin-ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
GaN MOSFET with Boron Trichloride-Based Dry Recess Process,
Journal of Physics: Conference Series, Vol.441, 012025, 2013.
(DOI: 10.1088/1742-6596/441/1/012025,   Elsevier: Scopus)
52.Jin-Ping Ao, Yoshiki Naoi and Yasuo Ohno :
Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure,
Vacuum, Vol.87, No.1, 150-154, 2013.
(DOI: 10.1016/j.vacuum.2012.02.038)
53.王 青鹏, 江 滢, Jin-Ping Ao and 王 德君 :
Design Fabrication and Characterization of GaN MOSFET,
Power Electronics, Vol.46, No.12, 81-83, 2012.
54.Hu Cheng-Yu, Kikuta Daigo, Sugimoto Masahiro, Jin-Ping Ao and Yasuo Ohno :
VT-VSUB Characterization of AlGaN/GaN HFET With p-Type Body Layer,
IEEE Transactions on Electron Devices, Vol.58, No.12, 4265-4271, 2011.
(DOI: 10.1109/TED.2011.2166402)
55.Jin-Ping Ao, Nakatani Katsutoshi, Sogawa Yuji, Akamatsu Shiro, Kim Hyun Young, Miyashita Takahiro, Motoyama Shin-ichi and Yasuo Ohno :
GaN MOSFET with a gate SiO2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.8, No.2, 457-460, 2011.
(DOI: 10.1002/pssc.201000489)
56.Jin-Ping Ao :
Monolithic Integration of GaN-based LEDs,
Journal of Physics: Conference Series, Vol.276, No.1, 012001-1-012001-4, 2011.
(DOI: 10.1088/1742-6596/276/1/012001)
57.Hu Cheng-Yu, Nakatani Katsutoshi, Kawai Hiroji, Jin-Ping Ao and Yasuo Ohno :
Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer,
IEICE Transactions on Electronics, Vol.E93-C, No.8, 1234-1237, 2010.
(DOI: 10.1587/transele.E93.C.1234,   CiNii: 10027365776,   Elsevier: Scopus)
58.Ikawa Yusuke, Yuasa Yorihide, Hu Cheng-Yu, Jin-Ping Ao and Yasuo Ohno :
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection,
IEICE Transactions on Electronics, Vol.E93-C, No.8, 1218-1224, 2010.
(DOI: 10.1587/transele.E93.C.1218,   CiNii: 10027365737,   Elsevier: Scopus)
59.Jin-Ping Ao, Suzuki Asato, Sawada Kouichi, Shinkai Satoko, Yoshiki Naoi and Yasuo Ohno :
Schottky contacts of refractory metal nitrides on gallium nitride using reactive sputtering,
Vacuum, Vol.84, No.12, 1439-1443, 2010.
(DOI: 10.1016/j.vacuum.2009.12.006)
60.Jin-Ping Ao, Nakatani Katsutoshi, Ohmuro Keisuke, Sugimoto Masahiro, Hu Cheng-Yu, Sogawa Yuji and Yasuo Ohno :
GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure,
Japanese Journal of Applied Physics, Vol.49, No.4, 04DF09-1-04DF09-4, 2010.
(DOI: 10.1143/JJAP.49.04DF09,   CiNii: 40017085215)
61.Cheng-Yu Hu, Hiroyuki Nokubo, Masanari Okada, Jin-Ping Ao and Yasuo Ohno :
Metal Insulator Semiconductor Diode Characterization on n-GaN by Capacitance Voltage Measurement at 150 °C,
Japanese Journal of Applied Physics, Vol.49, No.4, 04DF11, 2010.
(DOI: 10.1143/JJAP.49.04DF11,   CiNii: 40017085217)
62.Okuyama Yuka, Jin-Ping Ao, Awai Ikuo and Yasuo Ohno :
Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators,
Japanese Journal of Applied Physics, Vol.48, No.4, 04C025, 2009.
(DOI: 10.1143/JJAP.48.04C025,   CiNii: 210000066536)
63.Takahashi Kensuke, Jin-Ping Ao, Ikawa Yusuke, Hu Cheng-Yu, Kawai Hiroji, Shinohara Naoki, Niwa Naoki and Yasuo Ohno :
GaN Schottky Diodes for Microwave Power Rectification,
Japanese Journal of Applied Physics, Vol.48, No.4, 04C095, 2009.
(DOI: 10.1143/JJAP.48.04C095,   CiNii: 210000066606)
64.Jin-Ping Ao and Yasuo Ohno :
Refractory Metal Nitride Schottky Contact on GaN,
Semiconductor Technology, Vol.33, No.12, 75-79, 2008.
65.Yasuo Ohno and Jin-Ping Ao :
Future Applications of GaN Electron Devices,
Semiconductor Technology, Vol.33, No.12, 72-74, 2008.
66.Jin-Ping Ao, Yamaoka Yuya, Okada Masaya, Hu Cheng-Yu and Yasuo Ohno :
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress,
IEICE Transactions on Electronics, Vol.E91-C, No.7, 1004-1008, 2008.
(DOI: 10.1093/ietele/e91-c.7.1004,   CiNii: 10026818408)
67.Hu Cheng-Yu, Jin-Ping Ao, Okada Masaya and Yasuo Ohno :
A Study on Ohmic Contact to Dry-Etched p-GaN,
IEICE Transactions on Electronics, Vol.E91-C, No.7, 1020-1024, 2008.
(DOI: 10.1093/ietele/e91-c.7.1020,   CiNii: 10026818439)
68.Okada Masaya, Ito Hideki, Jin-Ping Ao and Yasuo Ohno :
Mechanism of AlGaN/GaN Heterostructure Field-Effect Transistor Threshold Voltage Shift by Illumination,
Japanese Journal of Applied Physics, Vol.47, No.4, 2103-2107, 2008.
(DOI: 10.1143/JJAP.47.2103,   CiNii: 40016003374)
69.Jin-Ping Ao, Matsuda Yoshikazu, Yamaoka Yuya and Yasuo Ohno :
A monolithic Cockcroft-Walton voltage multiplier based on AlGaN/GaN HFET structure,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2654-2657, 2007.
(DOI: 10.1002/pssc.200674701)
70.Okada Masaya, Matsuura Kazuaki, Jin-Ping Ao, Yasuo Ohno and Kawai Hiroji :
High-sensitivity UV phototransistor with GaN/AlGaN/GaN gate epi-structure,
Physica Status Solidi (A) Applications and Materials Science, Vol.204, No.6, 2117-2120, 2007.
(DOI: 10.1002/pssa.200674735)
71.Matsuura Kazuaki, Kikuta Daigo, Jin-Ping Ao, Ogiya Hiromichi, hiramoto Michihiro, Kawai Hiroji and Yasuo Ohno :
Inductively Coupled Plasma Reactive Ion Etching with SiCl4 Gas for Recessed Gate AlGaN/GaN Heterostructure Field Effect Transistor,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.46, No.4B, 2320-2324, 2007.
(DOI: 10.1143/JJAP.46.2320,   CiNii: 40015349045)
72.Daigo KIKUTA, Jin-Ping Ao, Junya MATSUDA and Yasuo Ohno :
A Mechanism of Enhancement-mode Operation of AlGaN/GaN MIS-HFET,
IEICE Transactions on Electronics, Vol.E89-C, No.7, 1031-1036, 2006.
(DOI: 10.1093/ietele/e89-c.7.1031,   CiNii: 110007538783)
73.Masaya Okada, Ryohei Takaki, Daigo Kikuta, Jin-Ping Ao and Yasuo Ohno :
Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage,
IEICE Transactions on Electronics, Vol.E89-C, No.7, 1042-1046, 2006.
(DOI: 10.1093/ietele/e89-c.7.1042,   CiNii: 110007538785)
74.Daigo Kikuta, Jin-Ping Ao and Yasuo Ohno :
Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer,
Solid-State Electronics, Vol.50, No.3, 316-321, 2006.
(DOI: 10.1016/j.sse.2005.12.021)
75.Daigo Kikuta, Ryohei Takaki, Junya Matsuda, Masaya Okada, Xin Wei, Jin-Ping Ao and Yasuo Ohno :
Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.44, No.4B, 2479-2482, 2005.
(DOI: 10.1143/JJAP.44.2479,   CiNii: 130004533756)
76.Daigo Kikuta, Jin-Ping Ao and Yasuo Ohno :
Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure,
IEICE Transactions on Electronics, Vol.E88-C, No.4, 683-689, 2005.
(DOI: 10.1093/ietele/e88-c.4.683,   CiNii: 10016563319)
77.Tao Wang, G Raviprakash, F Ranalli, N C Harrison, Jie Bai, R J P David, J P Parbrook, Jin-Ping Ao and Yasuo Ohno :
Effect of Strain Relaxation and Exciton Localization on Performance of 350-nm AlInGaN Quantum Light-Emitting Diodes,
Journal of Applied Physics, Vol.97, No.8, 083104-1-083104-4, 2005.
(DOI: 10.1063/1.1877816)
78.Yu-Huai Liu, Hong-Dong Li, Jin-Ping Ao, Young-Bae Lee, Tao Wang and Shiro Sakai :
Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes,
Journal of Crystal Growth, Vol.268, No.1-2, 30-34, 2004.
(DOI: 10.1016/j.jcrysgro.2004.04.103)
79.Tao Wang, J P Parbrook, N C Harrison, Jin-Ping Ao and Yasuo Ohno :
Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors,
Journal of Crystal Growth, Vol.267, No.3-4, 583-587, 2004.
(DOI: 10.1016/j.jcrysgro.2004.04.029)
80.Yoshifumi Kawakami, Naohiro Kuze, Jin-Ping Ao and Yasuo Ohno :
Two-Dimensional Device Simulation of 0.05 μm-Gate AlGaN/GaN HEMT,
IEICE Transactions on Electronics, Vol.E86-C, No.10, 2039-2042, 2003.
(CiNii: 110003214504,   Elsevier: Scopus)
81.Jin-Ping Ao, Daigo Kikuta, Naotaka Kubota, Yoshiki Naoi and Yasuo Ohno :
High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors,
IEICE Transactions on Electronics, Vol.E86-C, No.10, 2051-2057, 2003.
(CiNii: 110003214506,   Elsevier: Scopus)
82.Jin-Ping Ao, Naotaka Kubota, Daigo Kikuta, Yoshiki Naoi and Yasuo Ohno :
Thermal Stability Investigation of Copper-Gate AlGaN/GaN High Electron Mobility Transistors,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2376-2379, 2003.
(DOI: 10.1002/pssc.200303350)
83.Qing-Ming Zeng, Xiao-Chun Xu, Xian-Jie Li, Jin-Ping Ao, Quan-Shu Wang, Jian-Kui Guo, Wei-Ji Liu and Jun-Feng Jie :
High Speed AlGaAs/GaAs HBT D-Type Flip Flop and Static Frequency Divider,
Research & Progress of Solid State Electronics (Chinese), Vol.23, No.2, 183-185, 2003.
84.Jin-Ping Ao, Hisao Sato, Takashi Mizobuchi, Kenji Morioka, Shunsuke Kawano, Yoshihiko Muramoto, Young-Bae Lee, Daisuke Sato, Yasuo Ohno and Shiro Sakai :
Monolithic Blue LED Series Arrays for High-Voltage AC Operation,
Physica Status Solidi (A) Applied Research, Vol.194, No.2, 376-379, 2002.
(DOI: 10.1002/1521-396X(200212)194:2<376::AID-PSSA376>3.0.CO;2-3,   Elsevier: Scopus)
85.Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Yuji Izumi, Yves Lacroix, Hong-Dong Li, Jie Bai, Yoshiki Naoi and Shiro Sakai :
High-Performance 348nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.41, No.7A, 4450-4453, 2002.
(DOI: 10.1143/JJAP.41.4450,   CiNii: 110006341537)
86.Li Xian-Jie, Zeng Qing-Ming, Jin-Ping Ao, Zhao Fang-Hai, Yang Shu-Ren, Ke Xi-Ming, Wang Zhi-Gong, Liu Shi-Yong and Liang Chun-Guang :
A 1.25Gbit/s InP-based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver with a Lateral Buffer Mesa Structure,
Chinese Journal of Semiconductor, Vol.23, No.5, 468-472, 2002.
87.Tao Wang, Yu-Huai Liu, Young-Bae Lee, Yuji Izumi, Jin-Ping Ao, Jie Bai, Hong-Dong Li and Shiro Sakai :
Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,
Journal of Crystal Growth, Vol.235, No.1, 177-182, 2002.
(DOI: 10.1016/S0022-0248(01)01918-2,   CiNii: 80015150402)
88.Xian-Jie Li, Jin-Ping Ao, Qing-Ming Zeng, Wei-Ji Liu, Yong-lin Zhao, Xiao-chun Xu, Shi-Yong Liu and Chun-Guang Liang :
DC Performance of GaAs-based InAlAs/InGaAs MHEMT,
Research & Progress of Solid State Electronics (Chinese), Vol.22, No.2, 235-237, 2002.
89.Jin-Ping Ao, Liu Wei-Ji, Zeng Qing-Ming, Li Xian-Jie, Zhao Yong-Lin, Qiao Shu-Yun, Xu Xiao-Chun and Wang Quan-Shu :
Long Wavelength Monolithic Integrated Photoreceiver,
Semiconductor Optoelectronics (Chinese), Vol.23, No.1, 26-28, 2002.
90.Wang Rong, Wang Zhi-Gong, Ke Xi-Ming, Jin-Ping Ao, Li Xian-Jie and Liu Wei-Ji :
Design and Realization of an InAlAs/InGaAs HEMT Transimpedance Amplifier,
Journal of Southeast University (Natural Science Edition) (Chinese), Vol.32, No.1, 46-49, 2002.
(Elsevier: Scopus)
91.Wang Rong, Wang Zhi-Gong, Ke Xi-Ming, Jin-Ping Ao, Li Xian-Jie and Liu Wei-Ji :
A Low-Power Consumption GaAs PHEMT Transimpedance Preamplifier,
Journal of Optoelectronics & Laser (Chinese), Vol.13, No.1, 9-11, 2002.
92.Li Xian-Jie, Zeng Qing-Ming, Xu Xiao-Chun, Liu Wei-Ji, Jin-Ping Ao, Wang Quan-Shu, Yang Shu-Ren, Wang Zhi-Gong, Liu Shi-Yong and Liang Chun-Guang :
Investigation on 1.55μm Light Transmitter OEIC,
Semiconductor Optoelectronics (Chinese), Vol.23, No.1, 23-25, 2002.
93.Jin-Ping Ao, Qing-Ming Zeng, Yong-Lin Zhao, Xian-Jie Li, Ke-Li Cai, Shi-Yong Liu and Chun-Guang Liang :
Monolithically Integrated MSM/HEMT Long-wavelength Photoreceivers,
Journal of Optoelectronics & Laser (Chinese), Vol.11, No.3, 241-243, 2000.
94.Qing-Ming Zeng, Chang-Zhi Lu, Wei-Ji Liu, Xian-Jie Li, Yong-Lin Zhao, Jin-Ping Ao and Xiao-Chun Xu :
Study on AlGaN/GaN HEMT Devices,
Journal of Functional Materials and Devices (Chinese), Vol.6, No.3, 170-173, 2000.
95.Xian-Jie Li, Qing-Ming Zeng, Xiao-Chun Xu, Jin-Ping Ao, Wei-Ji Liu and Chun-Guang Liang :
Wet Chemical Selective Etching of InP/InGaAs HBT,
Journal of Functional Materials and Devices (Chinese), Vol.6, No.3, 178-181, 2000.
96.Wei-Ji Liu, Qing-Ming Zeng, Xian-Jie Li, Jin-Ping Ao, Yong-Lin Zhao, Jian-Kui Guo and Xiao-Chun Xu :
WN/W Anisotype-gate Self-aligned Process for n-channel HFET,
Journal of Functional Materials and Devices (Chinese), Vol.6, No.3, 190-192, 2000.
97.Xian-Jie Li, Qing-Ming Zeng, Ke-Li Cai, Jin-Ping Ao, Yong-Lin Zhao, Quan-Shu Wang, Wei-Ji Liu, Xiao-Chun Xu, Gang Zhang and Jian-Zhong Zhao :
MCM Flip-chip-bonding Technique used in Fabrication of CMOS-SEED Smart Pixel,
Journal of Optoelectronics & Laser (Chinese), Vol.11, No.3, 244-247, 2000.
98.Qing-Ming Zeng, Xiao-Chun Xu, Wei-Ji Liu, Xian-Jie Li, Jin-Ping Ao, Quan-Shu Wang and Jun-Feng Jie :
Design And Performance of GaAs HBTs Monolithic Microwave Amplifier,
Journal of Functional Materials and Devices (Chinese), Vol.6, No.3, 201-204, 2000.
99.Jin-Ping Ao, Qing-Ming Zeng, Yong-Lin Zhao, Xian-Jie Li, Ke-Li Cai, Shi-Yong Liu and Chun-Guang Liang :
Selective Wet Etching for OEIC Photoreceivers,
Semiconductor Information (Chinese), Vol.36, No.1, 47-49, 1999.
100.Xian-Jie Li, Qing-Ming Zeng, Ke-Li Cai, Jin-Ping Ao, Yong-Lin Zhao, Zhi-Xian Jiao, Quan-Shu Wang and Jian-kui Guo :
Flip-Chip Bond Technique Related to CMOS-SEED Smart Pixels,
Semiconductor Information (Chinese), Vol.36, No.1, 37-40, 1999.
101.Jin-Ping Ao, Qing-Ming Zeng, Yong-Lin Zhao, Xian-Jie Li, Shi-Yong Liu and Chun-Guang Liang :
InP-based InAlAs-InAs HEMT,
Semiconductor Information (Chinese), Vol.35, No.2, 35-37, 1998.
102.Liang Chunguang, Zeng Qingming, Yuan Mingwen, Ma Zhenchang and Jin-Ping Ao :
GaAs High Speed Devices and Circuits,
Int. Jour. of High Speed Electronics and Systems, Vol.7, No.3, 447-461, 1996.
103.Jin-Ping Ao and Qingming Zeng :
Investigation of InAlAs-InAs Modulation Doped Field-Effect Transistor,
Semiconductor Information (Chinese), Vol.29, No.2, 22-34, 1992.

Academic Letter:

1.Zhangcheng Liu, Dan Zhao, Jin-Ping Ao, Xiaohui Chang, Yanfeng Wang, Jiao Fu, Minghui Zhang and Hong-Xing Wang :
Responsivity improvement of Ti-diamond-Ti structure UV photodetector through photocurrent gain,
Optics Express, Vol.26, No.13, 17092-17098, 2018.
(DOI: 10.1364/OE.26.017092)
2.Zhangcheng Liu, Jin-Ping Ao, Fengnan Li, Wei Wang, Jingjing Wang, Jinwen Zhang and Hong-Xing Wang :
Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,
Applied Physics Letters, Vol.109, 153507, 2016.
(DOI: 10.1063/1.4965027)
3.Wang Qingpeng, Jiang Ying, Zhang Jiaqi, Li Liuan, Kawaharada Kazuya, Wang Dejun and Jin-Ping Ao :
Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process,
Applied Physics Express, Vol.8, No.4, 046501, 2015.
(DOI: 10.7567/APEX.8.046501,   Elsevier: Scopus)
4.Yao Yao, He Zhiyuan, Yang Fan, Shen Zhen, Zhang Jincheng, Ni Yiqiang, Li Jin, Wang Shuo, Zhou Guilin, Zhong Jian, Wu Zhisheng, Zhang Baijun, Jin-Ping Ao and Liu Yang :
Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique,
Applied Physics Express, Vol.7, No.1, 016502, 2014.
(DOI: 10.7567/APEX.7.016502,   Elsevier: Scopus)
5.Hu Cheng-Yu, Jin-Ping Ao and Yasuo Ohno :
Annealing with Ni for ohmic contact formation on ICP-etched p-GaN,
Electronics Letters, Vol.44, No.2, 155-157, 2008.
(DOI: 10.1049/el:20082907,   CiNii: 80017947509)
6.Naotaka Kubota, Jin-Ping Ao, Daigo Kikuta and Yasuo Ohno :
Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.43, No.7A, 4159-4160, 2004.
(DOI: 10.1143/JJAP.43.4159,   CiNii: 130004532349)
7.Kazuhiro Nishizono, Masaya Okada, Minoru Kamei, Daigo Kikuta, Kikuo Tominaga, Yasuo Ohno and Jin-Ping Ao :
Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor,
Applied Physics Letters, Vol.84, No.20, 3996-3998, 2004.
(DOI: 10.1063/1.1738175)
8.Jin-Ping Ao, Daigo Kikuta, Naotaka Kubota, Yoshiki Naoi and Yasuo Ohno :
Copper Gate AlGaN/GaN HEMT With Low Gate Leakage Current,
IEEE Electron Device Letters, Vol.24, No.8, 500-502, 2003.
(DOI: 10.1109/LED.2003.815158,   CiNii: 80016128530)
9.Jin-Ping Ao, Tao Wang, Daigo Kikuta, Yu-Huai Liu, Shiro Sakai and Yasuo Ohno :
AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.42, No.Part1, 4A, 1588-1589, 2003.
(DOI: 10.1143/JJAP.42.1588,   CiNii: 130004530584,   Elsevier: Scopus)
10.Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Hong-Dong Li, Hisao Sato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.10A, L1037-L1039, 2002.
(DOI: 10.1143/JJAP.41.L1037,   CiNii: 110006350816)
11.Tao Wang, Yu-Huai Liu, Young-Bae Lee, Jin-Ping Ao, Jie Bai and Shiro Sakai :
1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate,
Applied Physics Letters, Vol.81, No.14, 2508-2510, 2002.
(DOI: 10.1063/1.1510967,   CiNii: 80015534819)
12.Wang Rong, Wang Zhi-Gong, Ke Xi-Ming, Jin-Ping Ao, Li Xian-Jie and Liu Wei-Ji :
Optoelectronic Integrated Single-supply Source MSM/HEMT Photoreceivers,
High Technology Letters (Chinese), Vol.12, No.7, 1-5, 2002.
13.Hong-dong Li, Tao Wang, Yuhuai Liu, Jin-Ping Ao and Shiro Sakai :
V-Shaped Defects in AlGaN/GaN Superlattice Grown on Thin Undoped-GaN Layers on Sapphire Substrate,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.6B, L732-L735, 2002.
(DOI: 10.1143/JJAP.41.L732,   CiNii: 110006349715)
14.Xian-Jie Li, Fa-Wang Yan, Wen-Jun Zhang, Rong-Gui Zhang, Wei-Ji Liu, Jin-Ping Ao, Qing-Ming Zeng, Shi-Yong Liu and Chun-Guang Liang :
Field Effect Transistor with Self-organized In0.15Ga0.85As/GaAs Quantum Wires as Channel Grown by Molecular Beam Epitaxy on (553)B GaAs Substrates,
Chinese Physics Letters, Vol.18, No.8, 1147-1149, 2001.
15.Yan Fa-Wang, Li Xian-Jie, Zhang Wen-Jun, Zhang Rong-Gui, Liu Wei-Ji, Jin-Ping Ao, Liang Chun-Guang and Liu Shi-Young :
Self-organized (553) B In0.15Ga0.85As/GaAs Quantum-wire Field-effect Transistors,
Applied Physics Letters, Vol.78, No.18, 2793-2795, 2001.
(DOI: 10.1063/1.1365949,   Elsevier: Scopus)
16.Jin-Ping Ao, Qing-Ming Zeng, Yong-Lin Zhao, Xian-Jie Li, Wei-Ji Liu, Shi-Yong Liu and Chun-Guang Liang :
Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with Strained InAlAs Barrier Layer,
Chinese Physics Letters, Vol.17, No.8, 619-620, 2000.
(DOI: 10.1088/0256-307X/17/8/027,   Elsevier: Scopus)
17.Jin-Ping Ao, Zeng Qing-Ming, Zhao Yong-Lin, Li Xian-Jie, Liu Wei-Ji, Liu Shi-Yong and Liang Chun-Guang :
InP-based Enhancement-Mode Pseudomorphic HEMT with Strained In0.45Al0.55As Barrier and In0.75Ga0.25As Channel Layers,
IEEE Electron Device Letters, Vol.21, No.5, 200-202, 2000.
(DOI: 10.1109/55.841295)

Proceeding of International Conference:

1.Li Xiaobo, Pu Taofei, Hoshi Taiki, Xie Tian, Li Liuan, Li Xianjie, Shigeki Fujiwara Joseph Luke, Hiroshi Kitahata and Jin-Ping Ao :
Nickel Nitride Gate AlGaN/GaN HFETs with Low Gate Leakage Current,
2018 International Workshop on Nitride Semiconductors, Kanazawa, Nov. 2018.
2.Jin-Ping Ao, Li Xiaobo, Pu Taofei, Hoshi Taiki, Xie Tian, Li Liuan, Li Xianjie, Shigeki Fujiwara Joseph Luke and Hiroshi Kitahata :
Gallium Nitride RF Schottky Barrier Diodes for Microwave Wireless Power Transmission,
2018 International Forum on Wide Bandgap Semiconductors, Shenzhen, Oct. 2018.
3.Li Xiaobo, Pu Taofei, Hoshi Taiki, Xie Tian, Li Liuan, Li Xianjie, Shigeki Fujiwara Joseph Luke, Hiroshi Kitahata and Jin-Ping Ao :
Synthesis of nickel nitride electrodes for application on gallium nitride Schottky contact,
14th IUPAC International Conference on Novel Materials and their Synthesis, Guangzhou, Oct. 2018.
4.Shigeki Fujiwara Joseph Luke, K Tachihara, S Mori, 大塚 良, T Yamamoto, Satoru Eguchi, Kazumi Takaishi, I Toyoguchi, Jin-Ping Ao and Hiroshi Kitahata :
Influence of PTS stopcock status on the natural frequency of blood pressure‒transducer kits,
Joint Conference of IFDAS2018-FADAS2018-JDSA46, Nara, Oct. 2018.
5.Xie Tian, Zheng Tao and Jin-Ping Ao :
Synthesis of copper oxide by reactive magnetron sputtering for photoelectrochemical water splitting,
The 2018 8th International Conference on Advanced Engineering Materials and Technology (ICAEMT 2018), Shenzhen, Jul. 2018.
6.Pu Taofei, Wang Xiao, Huang Qian, Li Xiaobo, Bu Yuyu and Jin-Ping Ao :
Development of E-Mode AlGaN/GaN HJFETs,
2018 Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM2018), Beijing, Jul. 2018.
7.Li Xiaobo, Zhang Tong, Pu Taofei, Hoshi Taiki, Xie Tian, Li Xianjie and Jin-Ping Ao :
GaN Schottky Barrier Diode with Nickel Nitride Electrode,
The 2018 Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM2018), Beijing, Jul. 2018.
8.Luo Zhipeng, Zhao Fazhan, Wang Shihai, Wan Caiping, Xu Hengyu and Jin-Ping Ao :
4H-SiC MOS Capacitor C-V Curve Shift Caused by ArF Excimer Laser Light Irradiation,
The 5th International Symposium on Single Crystal Diamond and Electronics, Xi'an, Jun. 2018.
9.Jin-Ping Ao :
Development of AlGaN/GaN Ion-Sensitive Field-Effect Transistors for Chemical Sensing,
The 5th International Symposium on Single Crystal Diamond and Electronics, Jun. 2018.
10.Liu Zhangcheng, Zhao Dan, Jin-Ping Ao, Wang Wei and Wang Hongxing :
Structured TiO2/Diamond Photodetector with Photon-induced Negative Photoconductive Phenomenon,
2018 International Symposium on Single Crystal Diamond and Electronics, Xi'an, May 2018.
11.Liu Zhangcheng, Zhao Dan, Jin-Ping Ao, Chang Xiaohui, Wang Yanfeng, Fu Jiao, Zhang Minghui and Wang Hong-Xing :
Responsivity Improvement of Diamond UV Photodetector with Novel Device Design,
2018 International New Diamond and Nano Carbons Conference, Flagstaff, May 2018.
12.Pu Taofei, Li Xiaobo, Bu Yuyu, Chen Zhitao and Jin-Ping Ao :
GaN Schottky Barrier Diodes for Microwave Power Transmission,
The fifth IEEE MTT-S International Wireless Symposium (IEEE IWS'2018), May 2018.
(DOI: 10.1109/IEEE-IWS.2018.8400985,   Elsevier: Scopus)
13.Wang Ruiling, Bu Yuyu, Xie Tian and Jin-Ping Ao :
Photoelectrochemical Performance of BiVO4-based Photoanodes with A Z-scheme,
10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science, Mar. 2018.
14.Xie Tian, Wang Ruiling, Bu Yuyu and Jin-Ping Ao :
Fabrication and Photoelectrochemical Evaluation of CuxO Thin Film Photocathodes Grown by Magnetron Reactive Sputtering,
10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science, Mar. 2018.
15.Bu Y. Y., Wang L. R., Xie T., Zhang P. Y. and Jin-Ping Ao :
Defect modified photoanodes for photoelectrocatalytic water splitting,
13th IUPAC International Conference on Novel Materials and their Synthesis (NMS-XII), Oct. 2017.
16.Huang Qian, Pu Taofei, Zhang Jincheng, Hao Yue and Jin-Ping Ao :
Enhancement-mode GaN HEMTs with p-GaN cap layer and i-GaN blocking layer,
The 8th Asia-Pacific Workshop on Widegap Semiconductors, Sep. 2017.
17.Jin-Ping Ao :
Demonstration of AlGaN/GaN Ion-Sensitive Field-Effect Transistors by Surface Modification,
The 8th Asia-Pacific Workshop on Widegap Semiconductors, Sep. 2017.
18.Pu Taofei, Zhang Tong, Wang Lei, Huang Qian and Jin-Ping Ao :
Enhancement-Mode GaN-Based High Electron Mobility Transistors With a Blocking Layer,
9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science, Mar. 2017.
19.OHNO Yasuo, ITOH Hiroko and Jin-Ping Ao :
Reflection Control in Microwave Rectenna Using Integrated GaN SBD Configuration,
2016 Asia Wireless Power Transfer Workshop, Chengdu, Dec. 2016.
20.Jin-Ping Ao, Okada Naoto, Pu Taofei, Itoh Hiroko and Ohno Yasuo :
GaN SBDs on Silicon Substrate for Microwave Power Rectification,
2016 Asia Wireless Power Transfer Workshop, Chengdu, Dec. 2016.
21.Wang Lei, Zhang Jiaqi, Li Liuan, Xue Junshuai and Jin-Ping Ao :
Plasma-assisted low-temperature annealed ohmic process on AlGaN/GaN heterostructure field-effect transistors,
International Forum on Wide Bandgap Semiconductors China (IFWS 2016), Beijing, Oct. 2016.
22.Jin-Ping Ao, Xie Tian, Zhang Tong, Xue Junshuai and Bu Yuyu :
Synthesis and Applications of P-type Metal Oxides by Reactive Magnetron Sputtering,
12th IUPAC International Conference on Novel Materials and their Synthesis (NMS-XII), Changsha, Oct. 2016.
23.Wang Lei, Maeda Yutaro, Bu Yuyu and Jin-Ping Ao :
Effect of UV/Ozone and Oxygen Plasma Treatment on AlGaN surface of AlGaN/GaN Ion-Sensitive Field-Effect Transistor,
10th International Conference on New Diamond and Nano Carbons, Xi'an, May 2016.
24.Liu Xinke, Jin-Ping Ao, He Jiazhu, Wang Jianfeng, Yu Wenjie and Xu Ke :
1200 V GaN Schottky Barrier Diode on 2'' Free-Standing Wafer using a CMOS-Compatible Gold-Free Process,
10th International Conference on New Diamond and Nano Carbons, Xi'an, May 2016.
25.Pu Taofei, Zhang Fuzhe and Jin-Ping Ao :
Effect of Oxidation Treatment on Threshold Voltage of GaN MOSFETs Fabricated on AlGaN/GaN Heterostructure,
10th International Conference on New Diamond and Nano Carbons, Xi'an, May 2016.
26.Bu Yuyu, Li Weibing and Jin-Ping Ao :
Fabrication of Large-scaled Multilayer C3N4 Ultrathin Flake by Mechanical Grind Method with Enhanced Photocatalysis Performance,
10th International Conference on New Diamond and Nano Carbons, Xi'an, Mar. 2016.
27.Chang Chun-Chi, Huang Yu-Ling, Jin-Ping Ao and Chao Liang-Chiun :
Characterization of AgxO and Al:AgxO thin films prepared by reactive ion beam sputter deposition,
2nd International Forum on Advanced Technologies, Tokushima, Mar. 2016.
28.Xie Tian, Bu Yuyu, Chao Liang-Chiun and Jin-Ping Ao :
Fabrication of Cu2O thin films by reactive magnetron sputtering for photoelectrochemical water splitting,
2nd International Forum on Advanced Technologies, Tokushima, Mar. 2016.
29.Meng Li, Zhang Jingwen, Jin-Ping Ao and Hou Xun :
Size-Tunable Self-assembled ZnO Quantum Dots on 4H-SiC Substrates,
2nd International Forum on Advanced Technologies, Tokushima, Mar. 2016.
30.Chao Liangchiun, Ye Chi-Chao and Jin-Ping Ao :
Photosensing properties of ZnO nanostructure,
2nd International Forum on Advanced Technologies, Tokushima, Mar. 2016.
31.zhang Tong, Li Liuan, Wang Lei and Jin-Ping Ao :
Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/HfON stack gate layer deposited by reactive sputtering,
8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science, Nagoya, Mar. 2016.
32.Wang Lei, Zhang Jiaqi, Wang Qingpeng, Maeda Yutaro and Jin-Ping Ao :
Investigation on recess processing on AlGaN/GaN heterostructure field-effect transistors,
The 37th International Symposium on Dry Process, Hyogo Prefecture, Nov. 2015.
33.Li Liuan, Zhang Jiaqi, Liu Yang and Jin-Ping Ao :
Gate First Metal-Oxide-Semiconductor AlGaN/GaN HFETs Fabricated with a Low Temperature Ohmic Process,
the 11th International Conference on Nitride Semiconductors, Beijing, Aug. 2015.
34.Zhang Fuzhe, Jiang Ying, Wang Qingpeng, Shinkai Satoko and Jin-Ping Ao :
Device Isolation for GaN MOSFET Using Boron Ion Implantation,
the 11th International Conference on Nitride Semiconductors, Beijing, Aug. 2015.
35.Li Liuan, Itai Yuki, Wang Xinzhi and Jin-Ping Ao :
NiO/GaN heterojunction diodes deposited by magnetron reactive sputtering,
The 13th International Symposium on Sputtering & Plasma Processes, Kyoto, Jul. 2015.
36.Jin-Ping Ao :
Enhancement-mode GaN MOSFETs on AlGaN/GaN Heterostructure,
2015 International Symposium on Single Crystal Diamond and its Electronics, Xi'an, Jun. 2015.
37.Jin-Ping Ao :
Synthesis and Application of TiN for GaN Devices,
International Forum on Advanced Functional Materials and Polymer Materials, Qingdao, May 2015.
38.Zhang Jiaqi, Wang Qingpeng, Kawaharada Kazuya, Zhu Huichao and Jin-Ping Ao :
Effect of Annealing and Temperature on the Performance of Self-Aligned Gate AlGaN/GaN HFETs,
7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology & Science, Nagoya, Mar. 2015.
39.Jin-Ping Ao :
Development of Gallium Nitride Electron Devices for Microwave and Milimeterwave Application,
2014 international forum on development strategy of the third generation semiconductors, Dongguan, Dec. 2014.
40.Fujihara Ryota, Itai Yuki, Li Liuan, Liu Qiang, Yasuo Ohno and Jin-Ping Ao :
Temperature Dependence of TiN-Anode GaN Schottky Barrier Diode Characteristics for Microwave Power Rectification,
2014 International Conference on Solid State Devices and Materials, Tsukuba, Sep. 2014.
41.Jin-Ping Ao :
Development of Gallium Nitride Schottky Barrier Diode for Microwave Rectification,
Progress In Electromagnetics Research Symposium, Guangzhou, Aug. 2014.
42.Jin-Ping Ao, Wang Qingpeng, Jiang Ying, Li Liuan, Kawaharada Kazuya and Liu Yang :
GaN MOSFET on AlGaN/GaN Heterostructure with Recess Structure,
Energy, Materials and Nanotechnology, Open Access Week Meeting, Chengdu, Aug. 2014.
43.Jin-Ping Ao :
Titanium Nitride and its Application on GaN-based Electron Devices,
2014 International Symposium on Single Crystal Diamond and its Electronics and the Fourth Chinese Vacuum Forum, Xi'an, Jun. 2014.
44.Niigata Kazutaka, Narano Kazuhiro, Maeda Yutaro and Jin-Ping Ao :
Surface Dependence of pH Sensors on AlGaN/GaN Heterostructures,
The 225th Electrochemical Society Meeting, Orlando, May 2014.
45.Li Liuan, Shiraishi Takayuki, Kishi Akinori, Nakamura Ryosuke and Jin-Ping Ao :
Synthesis of titanium nitride and aluminum oxide by reactive sputtering for GaN-based electron devices,
The 3rd International Symposium on Next-Generation Electronics, Taoyuan, May 2014.
46.Niigata Kazutaka, Narano Kazuhiro, Maeda Yutaro and Jin-Ping Ao :
Temperature Dependence of pH Sensor on AlGaN/GaN Heterostructure,
6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 7th International Conference on Plasma-Nano Technology & Science, Nagoya, Mar. 2014.
47.Nagaoka Shiro, Horibe Hideo, Tagawa Seiichi and Jin-Ping Ao :
A Fundamental Study of the Electron Beam Lithography Beyond Sub 100nm Process and its Application,
Malaysia-Japan International Conference on Nanoscience, Nanotechnology and Nanoengineering 2014, Shah Alam, Feb. 2014.
48.Niigata Kazutaka, Narano Kazuhiro, Maeda Yutaro and Jin-Ping Ao :
pH Sensor on AlGaN/GaN Heterostructure with High Al Mole Fraction,
2013 International Workshop on Frontiers in Sensors, Sanya, Dec. 2013.
49.Kishi Akinori, Itai Yuki, Li Liuan, Shiraishi Takayuki, Fukui Kazuhito, Liu Qiang, Yasuo Ohno and Jin-Ping Ao :
GaN Schottky Barrier Diodes with TiN Electrode for High Efficiency Microwave Power Rectification,
2013 International Conference on Solid State Devices and Materials, Fukuoka, Sep. 2013.
50.Wang Qingpeng, Jiang Ying, Miyashita Takahiro, Motoyama Shin-ichi, Li Liuan, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Process Dependency on Threshold Voltage of GaN MOSFETs on AlGaN/GaN Heterostructure,
10th Topical Workshop on Heterostructure Microelectronics, Hakodate, Sep. 2013.
51.Li Liuan, Kishi Akinori, Shiraishi Takayuki, Jiang Ying, Wang Qingpeng and Jin-Ping Ao :
Electrical property of TiN on gallium nitride under different sputtering conditions,
The 12th International Symposium on Sputtering & Plasma Processes, Kyoto, Jul. 2013.
52.Li Liuan, Shiraishi Takayuki, Kishi Akinori, Jin-Ping Ao and Yasuo Ohno :
Evaluation of a Gate-First process for AlGaN/GaN HFETs,
5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials, Nagoya, Jan. 2013.
53.Jiang Ying, Wang Qingpeng, Tamai Kentaro, Shinkai Satoko, Miyashita Takahiro, Motoyama Shin-Ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Device Isolation for GaN MOSFETs With Boron Ion Implantation,
5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials, Nagoya, Jan. 2013.
54.Jin-Ping Ao, Shiraishi Takauki, Li Liuan, Kishi Akinori and Yasuo Ohno :
Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices,
the first international conference on emerging advanced nanomaterials (2012), Brisbane, Oct. 2012.
55.Yasuo Ohno, Kio Yusuke, Ikawa Yusuke and Jin-Ping Ao :
Observation of Side-gating Effect in AlGaN/GaN HFETs,
International Workshop on Nitride Semiconductors 2012, Sapporo, Oct. 2012.
56.Kio Yusuke, Hosokawa Taishi, Ikawa Yusuke, Jin-Ping Ao and Yasuo Ohno :
Analysis of AlGaNGaN HFET Current Collapse Recovery Process,
International Workshop on Nitride Semiconductors 2012, Sapporo, Oct. 2012.
57.Jiang Ying, Wang Qingpeng, Tamai Kentaro, Miyashita Takahiro, Motoyama Shin-ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
GaN MOSFET with Boron Trichloride-Based Dry Recess Process,
11th Asia Pacific Conference on Plasma Science and Technology and 25th Symposium on Plasma Science for Materials, Kyoto, Oct. 2012.
58.Iwasaki Yuichi, Abe Mami, Hayashino Kouhei, Fukui Kazuhito and Jin-Ping Ao :
60 GHz Wireless Interconnection Using Electromagnetic Coupling of Open-Ring Resonators,
2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, Sep. 2012.
59.Iwasaki Yuichi, Shioiri Tatsuaki, Harauchi Kenji, Fukui Kazuhito, Hayashino Kouhei, Jin-Ping Ao and Yasuo Ohno :
Effects of Wetting to Wireless Power Transmission by Open-Ring Resonators Coupling,
2012 IEEE MTT-S International Microwave Workshop Series (IMWS) on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS-IWPT2012), 97-100, Kyoto, May 2012.
(DOI: 10.1109/IMWS.2012.6215768,   Elsevier: Scopus)
60.Fukui Kazuhito, Takeuchi Taro, Hayashino Kouhei, Harauchi Kenji, Iwasaki Yuichi, Jin-Ping Ao and Yasuo Ohno :
T-shaped Anode GaN Schottky Barrier Diode for Microwave Power Rectification,
2012 IEEE MTT-S International Microwave Workshop Series (IMWS) on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS-IWPT2012), 195-198, Kyoto, May 2012.
(DOI: 10.1109/IMWS.2012.6215785,   Elsevier: Scopus)
61.Hayashino Kouhei, Harauchi Kenji, Iwasaki Yuichi, Fukui Kazuhito, Jin-Ping Ao and Yasuo Ohno :
Analysis of Loss Mechanism in Rectenna Circuit with GaN Schottky Barrier Diode,
2012 IEEE MTT-S International Microwave Workshop Series (IMWS) on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS-IWPT2012), Kyoto, May 2012.
(DOI: 10.1109/IMWS.2012.6215780,   Elsevier: Scopus)
62.Wang Qingpeng, Tamai Kentaro, Miyashita Takahiro, Motoyama Shin-ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Influence of Dry Recess Process on Enhancement-mod GaN MOSFET,
4th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials, Nagoya, Mar. 2012.
63.Ikawa Yusuke, Hosokawa Taishi, Kio Yusuke, Jin-Ping Ao and Yasuo Ohno :
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Deep Levels in GaN Buffer Layer,
2011 International Conference on Solid State Devices and Materials, Nagoya, Sep. 2011.
64.Iwasaki Yuichi, Harauchi Kenji, Jin-Ping Ao, Shinohara Naoki, Tonomura Hiroshi and Yasuo Ohno :
Open-Ring Resonator Coupling with GaN SBD for Microwave Power Transmission,
9th Topical Workshop on Heterostructure Microelectronics, Gifu, Aug. 2011.
65.Yasuo Ohno, Kuroda Kentaro, Ohmori Yuka, Hosokawa Taishi and Jin-Ping Ao :
Measurement of AlGaN/GaN HFET Current Collapse Recovery Process,
9th International Conference on Nitride Semiconductors, Glasgow, Jul. 2011.
66.Jin-Ping Ao, Yoshiki Naoi and Yasuo Ohno :
Thermally Stable TiN Schottky Contact on AlGaN/GaN Heterostructure,
The 11th International Symposium on Sputtering & Plasma Processes, Kyoto, Jul. 2011.
67.Yasuo Ohno and Jin-Ping Ao :
Microwave Power Transmission Using Open-ring Resonators Coupling and GaN SBD,
2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Daejeon, Jun. 2011.
68.Harauchi Kenji, Iwasaki Yuichi, Abe Mami, Jin-Ping Ao, Shinohara Naoki, Tonomura Hiroshi and Yasuo Ohno :
Power Transmission through Insulating Plate Using Open-Ring Resonator Coupling and GaN Schottky Diode,
IEEE MTT-S International MicrowaveWorkshop Series (IMWS) on InnovativeWireless Power Transmission: Technologies, Systems, and Applications, 33-36, Kyoto, May 2011.
(DOI: 10.1109/IMWS.2011.5877085,   Elsevier: Scopus)
69.Abe Mami, Okuyama Yuka, Jin-Ping Ao and Yasuo Ohno :
Misalignment Effects in Inter-Chip Wireless Connection with Open-Ring Resonators,
2010 Asia-Pacific Microwave Conference (APM C2010), Yokohama, Dec. 2010.
70.Jin-Ping Ao :
Monolithic Integration of GaN-based LEDs,
2nd Photonics and Optoelectronics Meetings (POEM2010), Wuhan, Nov. 2010.
71.Jin-Ping Ao, Takahashi Kensuke, Shinohara Naoki, Niwa Naoki, Fujiwara Teruo and Yasuo Ohno :
S-parameter Analysis of GaN Schottky Diodes for Microwave Power Rectification,
2010 IEEE Compound Semiconductor Integrated Circuit Symposium, Monterey, Oct. 2010.
(DOI: 10.1109/CSICS.2010.5619657,   Elsevier: Scopus)
72.Abe Mami, Amou Takahumi, Kuramoto Kenji, Jin-Ping Ao and Yasuo Ohno :
Effects of Substrate Conductivity on Open-Ring Resonator Wireless Interconnection,
2010 Asia-Pacific Radio Science Conference, Toyama, Sep. 2010.
73.Jin-Ping Ao, Nakatani Katsutoshi, Sogawa Yuji, Kim Hyun Young, Miyashita Takahiro, Motoyama Shin-ichi and Yasuo Ohno :
GaN MOSFET with Gate SiO2 Deposited by Silane-Based PECVD,
The 37th International Symposium on Compound Semiconductors, Takamatsu, May 2010.
74.Hu Cheng-Yu, Kikuta Daigo, Nakatani Katsutoshi, Jin-Ping Ao, Sugimoto Masahiro and Yasuo Ohno :
Monitoring and control of substrate voltage for AlGaN/GaN HEMTs with p-GaN epi-layer,
The 8th International Conference on Nitride Semiconductors, Cheju, Oct. 2009.
75.Hu Cheng-Yu, Kikuta Daigo, Nakatani Katsutoshi, Jin-Ping Ao, Sugimoto Masahiro and Yasuo Ohno :
Low Resistance Ohmic Contact to Deeply Dry-etched p-GaN,
The 8th International Conference on Nitride Semiconductors, Cheju, Oct. 2009.
76.Nakatani Katsutoshi, Jin-Ping Ao, Ohmuro Keisuke, Sugimoto Masahiro, Hu Cheng-Yu, Sogawa Yuji and Yasuo Ohno :
Evaluation of GaN MOSFET with TEOS SiO2 Gate Insulator,
The 2009 International Conference on Solid State Devices and Materials, Sendai, Oct. 2009.
77.Hu Cheng-Yu, Nokubo Hiroyuki, Okada Masaya, Jin-Ping Ao and Yasuo Ohno :
MIS Diode Characterization on n-GaN by C-V Measurement at 150 C,
The 2009 International Conference on Solid State Devices and Materials, Sendai, Oct. 2009.
78.Ikawa Yusuke, Yuasa Yorihide, Hu Cheng-Yu, Jin-Ping Ao and Yasuo Ohno :
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection,
8th Topical Workshop on Heterostructure Microelectronics, Nagano, Aug. 2009.
79.Hu Cheng-Yu, Nakatani Katsutoshi, Kawai Hiroji, Jin-Ping Ao and Yasuo Ohno :
Buffer layer doping concentration measurement using VT-VSUB Characterization of GaN HEMT with p-GaN substrate layer,
8th Topical Workshop on Heterostructure Microelectronics, Nagano, Aug. 2009.
80.Jin-Ping Ao, Suzuki Asato, Sawada Kouichi, Shinkai Satoko and Yasuo Ohno :
Schottky Contacts of Reactive Sputtering Refractory Metal Nitrides on Gallium Nitride,
The 10th International Symposium on Sputtering & Plasma Processes, 433-436, Kanazawa, Jul. 2009.
81.Shinohara Naoki, Miyata Yushi, Mitani Tomohiko, Niwa Naoki, Takagi Kenji, Hamamoto Kenichi, Ujigawa Satoshi, Jin-Ping Ao and Yasuo Ohno :
New Application of Microwave Power Transmission for Wireless Power Distribution System in Buildings,
Asia Pacific Microwave Conference 2008, Hong Kong, Dec. 2008.
82.Xu Heng-Yu, Jin-Ping Ao, Yu Hui, Hu Cheng-Yu and Yasuo Ohno :
Device Isolation for AlGaN/GaN HFET Utilizing Heavy Metal Diffusion,
IEEE Nanotechnology Materials and Device Conference 2008 (NMDC2008), Kyoto, Oct. 2008.
83.Okuyama Yuka, Jin-Ping Ao, Awai Ikuo and Yasuo Ohno :
Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators,
The 2008 International Conference on Solid State Devices and Materials (SSDM2008), Tsukuba, Sep. 2008.
84.Hu Cheng-Yu, Nakatani Katsutoshi, Kikuta Daigo, Sugimoto Masahiro, Jin-Ping Ao and Yasuo Ohno :
VT-VSUB Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN,
The 2008 International Conference on Solid State Devices and Materials (SSDM2008), Tsukuba, Sep. 2008.
85.Takahashi K., Jin-Ping Ao, Ikawa Y., Hu -Y. C., Kawai H., Shinohara N., Niwa N. and Yasuo Ohno :
GaN Schottky Diodes for Microwave Power Rectification,
The 2008 International Conference on Solid State Devices and Materials (SSDM2008), Tsukuba, Sep. 2008.
86.Hu Cheng-Yu, Jin-Ping Ao, Okada M., Sugimoto M., Uesugi T., Kachi T. and Yasuo Ohno :
Low Resistance Ohmic Contact Formation to Dry-Etched p-GaN,
The 34th International Symposium on Compound Semiconductors, Kyoto, Oct. 2007.
87.Hu Cheng-Yu, Matsuura K., Okada Masaya, Jin-Ping Ao and Yasuo Ohno :
Ohmic Contact for Dry-Etched p-GaN Realized by High Temperature Annealing,
2007 Topical Workshop on Heterostructure Microelectronics, Chiba, Aug. 2007.
88.Jin-Ping Ao, Yamaoka Yuya, Okada Masaya, Hu Cheng-Yu and Yasuo Ohno :
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress,
2007 Topical Workshop on Heterostructure Microelectronics, Chiba, Aug. 2007.
89.Okada Masaya, Matsuura Kazuaki, Jin-Ping Ao, Yasuo Ohno and Kawai Hiroji :
High-Sensitivity UV Phototransistor with GaN/AlGaN/GaN Gate Epi-Structure,
International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
90.Jin-Ping Ao, Matsuda Yoshikazu, Yamaoka Yuya and Yasuo Ohno :
A Monolithic Cockcroft-Walton Voltage Multiplier Based on AlGaN/GaN HFET Structure,
International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
91.Matsuura K., Kikuta D., Jin-Ping Ao, Ogiya H., Hiramoto M., Kawai H. and Yasuo Ohno :
ICP Reactive Ion Etching with SiCl4 Gas for Recessed Gate AlGaN/GaN HFET,
The 2006 International Conference on Solid State Devices and Materials (SSDM2006), Yokohama, Sep. 2006.
92.Jin-Ping Ao, Ryota Kan, Toshio Hirao, Hideki Okada, Masaya Okada, Daigo Kikuta, Shinobu Onoda, Hisayoshi Itoh and Yasuo Ohno :
Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs,
2005 International Conference on Solid State Devices and Materials, 478-479, Kobe, Sep. 2005.
93.Daigo Kikuta, Jin-Ping Ao, Junya Matsuda and Yasuo Ohno :
A Mechanism of Enhancement-mode Operation of AlGaN/GaN MIS-HFET,
2005 Topical Workshop on Heterostructure Microelectronics, Hyogo, Aug. 2005.
94.Masaya Okada, Ryohei Takaki, Daigo Kikuta, Jin-Ping Ao and Yasuo Ohno :
Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage,
2005 Topical Workshop on Heterostructure Microelectronics, Hyogo, Aug. 2005.
95.Daigo Kikuta, Ryohei Takaki, Junya Matsuda, Masaya Okada, Xin Wei, Jin-Ping Ao and Yasuo Ohno :
Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs,
2004 International Conference on Solid State Devices and Materials, Tokyo, Sep. 2004.
96.Kazuhiro Nishizono, Masaya Okata, Minoru Kamei, Daigo Kikuta, Jin-Ping Ao, Kikuo Tominaga and Yasuo Ohno :
Al-dope ZnO Intermediate Layer for AlGaN/GaN HEMT Ohmic Contact,
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 552-553, Tokyo, Sep. 2003.
97.Young-Bae Lee, Ryohei Takaki, Hisao Sato, Jin-Ping Ao, Yu-Huai Liu, Hong-dong Li, Yoshiki Naoi and Shiro Sakai :
High Efficiency GaN Light-Emitting Diode with High Resistance P-Pad Region Using Plasma Surface Treatment,
5th International Conference on Nitride Semiconductors, Nara, May 2003.
98.Jin-Ping Ao, Naotaka Kubota, Daogo Kikuta, Yoshiki Naoi and Yasuo Ohno :
Thermal Stability Investigation on Copper Gate AlGaN/GaN High Electron Mobility Transistors,
Abstracts of the 5th International Conference on Nitride semiconductors, Nara, May 2003.
99.Jin-Ping Ao, Naotaka Kubota, Hong-Xing Wang, Yu-Huai Liu, Yoshiki Naoi, Daigo Kikuta, Shiro Sakai and Yasuo Ohno :
Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate,
Proceeding of First Asia-Pacific Workshop on Widegap Semiconductors, 258-259, Awajishima, Mar. 2003.
100.Yoshifumi Kawakami, Naohiro Kuze, Jin-Ping Ao and Yasuo Ohno :
Two-Dimensional Device Simulation of 0.05 um-Gate AlGaN/GaN HEMT,
Proceedings of the Topical Workshop on Heterostructure Microelectronics 2003, Naha, Jan. 2003.
101.Jin-Ping Ao, Kikuta Daigo, Yoshiki Naoi and Yasuo Ohno :
High Temperature Stability of Cu-Gate AlGaN/GaN HEMT,
Proceedings of the Topical Workshop on Heterostructure Microelectronics 2003, 64-65, Naha, Jan. 2003.
102.Yasuo Ohno and Jin-Ping Ao :
Device Scaling and Prospect of GaN FET,
Extended Abstract of the 2002 International Conference on Solid State Devices and Materials, 282-283, Nagoya, Sep. 2002.
103.Jin-Ping Ao, Hisao Sato, Takashi Mizobuchi, Kenji Morioka, Shunsuke Kawano, Yoshihiko Muramoto, Young-Bae Lee, Yasuo Ohno and Shiro Sakai :
Monolithic Blue LED Series Arrays for High-Voltage AC Operation,
Abstracts of the International Workshop on Nitride Semiconductors 2002, Aachen, Jul. 2002.
104.Rong Wang, Jin-Ping Ao, Zhi-Gong Wang, Xian-Jie Li, Wei-Ji Liu and Xi-Ming Ke :
Optoelectronic Integrated Single-Power Source MSM/HEMT Photoreceivers,
SPIE Proceeding of Optoelectronics and Microelectronics, Vol.4603168, 168-173, Nanjing, Nov. 2001.
(DOI: 10.1117/12.444553,   Elsevier: Scopus)
105.Li Xian-jie, Jin-Ping Ao, Wang Rong, Liu Wei-Ji, Wang Zhi-Gong, Zeng Qing-Ming, Liu Shi-Yong and Liang Chun-Guang :
An 850nm Wavelength Monolithic Integrated Photoreceiver with a Single-power- Supplied Transimpedance Amplifier based on GaAs PHEMT Technology,
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest, 65-69, Baltimore, Oct. 2001.
106.Jin-Ping Ao, Liu Wei-Ji, Zeng Qing-Ming, Li Xian-Jie, Zhao Yong-Lin, Xu Xiao-Chun and Liang Chun-Guang :
10Gb/s InAlAs/InGaAs HEMT Transimpedance Preamplifiers,
2nd International Conference on Microwave and Millimeter Wave Technology, Beijing, Oct. 2000.
107.Zeng Qing-Ming, Li Xian-Jie, Xu Xiao-Chun, Liu Wei-Ji, Jin-Ping Ao and Wang Quan-Shu :
Design and Performance of Transimpedance Amplifier and Cascadable Amplifier with AlGaAs/GaAs HBTs,
2nd International Conference on Microwave and Millimeter Wave Technology, Beijing, Oct. 2000.
108.Liang Chunguang, Li Xianjie, Jin-Ping Ao, Zeng Qingming, Dong Yi, Zhao Yonglin, Zhao Fanghai, Yang Shuren, Liu Shiyong, Wang Zhigong and Wang Rong :
InP-based Monolithic Optoeletronic Integrated Circuits,
First China-Germany Joint Symposium on Opto-& Microelectronic Devices and Circuits, Nanjing, Apr. 2000.
109.Li Xianjie, Zeng Qingming, Zhao Fanghai, Dong Yi, Jin-Ping Ao, Liu Shiyong and Liang Chunguang :
An InP-based Monolithic Integration of 1.55 m MQW Laser and HBT Driver Circuit,
WDM and photonic switching devices for network applications, Proceedings of SPIE, Vol.3949, 136-142, San Jose, Jan. 2000.
110.Jin-Ping Ao, Zeng Qingming, Zhao Yonglin, Cai Keli, Li Xianjie, Liu Weiji, Liu Shiyong and Liang Chunguang :
Heterostructure Monolithically Integrated Circuits For Optical Communication,
The Fifth IUMRS International Conference on Advanced Materials, Beijing, Jul. 1999.
111.Jin-Ping Ao, Zeng Qingming, Zhao Yonglin, Cai Keli, Li Xianjie, Jiao Zhixian, Liu Shiyong and Liang Chunguang :
AlGaAs/InGaAs PHEMT Preamplifier for Optical Communication Systems,
The Fifth Intl. Conference on Solid-State and Integrated Circuit Technology, Beijing, Oct. 1998.
112.Jianjun Gao, Baoxin Gao, Jin-Ping Ao and Chunguang Liang :
An Improved HEMT Noise Model,
1998 China-Japan Joint Meeting on Microwaves, Beijing, Aug. 1998.
113.Jin-Ping Ao, Jing Pan, Keli Cai and Qingming Zeng :
InAlAs-InGaAs HEMT Dynamic Frequency Divider,
the 1st International Conference on ASIC, Beijing, Oct. 1994.

Proceeding of Domestic Conference:

1.Taiki Hoshi, Li Xiaobo and Jin-Ping Ao :
NiN電極有するマイクロ波整流用GaNショットキーバリアダイオード,
第65回応用物理学会春季学術講演会, Mar. 2018.
2.Wang Ying, Yang Lin-An, Jin-Ping Ao, Wang Zhi-Zhe and Hao Yue :
Thermal analysis on a vertical GaN Gunn diode,
第62回応用物理学関係連合講演会, Mar. 2015.
3.藤原 諒太, 板井 勇樹, 劉 強, 李 柳暗, Yasuo Ohno and Jin-Ping Ao :
TiN 電極マイクロ波整流用 GaN SBD の温度特性,
第75回応用物理学会学術講演会, Sep. 2014.
4.藤原 諒太, 劉 強, 李 柳暗, 板井 勇樹, Yasuo Ohno and Jin-Ping Ao :
マイクロ波無線電力伝送用GaNショットキーダイオード,
2014年電子情報通信学会ソサイエティ大会, Sep. 2014.
5.Liu Qiang, Li Liuan, Fujihara Ryota, Itai Yuki, Yasuo Ohno and Jin-Ping Ao :
Size Dependence of GaN Schottky Barrier Diode Characteristics for Microwave Power Rectification,
平成26年度電気関係学会四国支部連合大会, Sep. 2014.
6.中村 亮介, 白石 孝之, 福村 卓哉, 李 柳暗 and Jin-Ping Ao :
セルフアラインゲート構造を有するAlGaN/GaN HFETの試作,
2014年度応用物理・物理系学会中国四国支部合同学術講演会, Jul. 2014.
7.井川 裕介, 李 根三, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETサイドゲート効果における光照射・温度の影響,
第61回応用物理学関係連合講演会, Mar. 2014.
8.新潟 一宇, 逢坂 直也, 楢野 和宏 and Jin-Ping Ao :
AlGaN/GaN ヘテロ構造を用いたpHセンサの温度依存性,
第74回応用物理学会学術講演会, Sep. 2013.
9.板井 勇樹, 岸 明徳, 李 柳暗, 白石 孝之, 福居 和人, 劉 強, Jin-Ping Ao and Yasuo Ohno :
TiN電極を有するマイクロ波整流用GaNショットキーバリアダイオード,
第74回応用物理学会学術講演会, Sep. 2013.
10.福居 和人, 劉 強, 板井 勇樹, 岸 明徳, Jin-Ping Ao and Yasuo Ohno :
GaN SBDを用いたレクテナ回路の特性比較,
2013年電子情報通信学会ソサイエティ大会, Sep. 2013.
11.木尾 勇介, 井川 祐介, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETサイドゲート効果における光照射・温度の影響,
第60回応用物理学関係連合講演会, Mar. 2013.
12.Wang Qingpeng, Jiang Ying, Tamai Kentaro, Miyashita Takahiro, Motoyama Shin-ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Oxide Thickness Dependency on Threshold Voltage of GaN MOSFETs on AlGaN/GaN Heterostructure,
第60回応用物理学関係連合講演会, Mar. 2013.
13.Jiang Ying, Wang Qingpeng, Tamai Kentaro, Shinkai Satoko, Miyashita Takahiro, Motoyama Shin-Ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Field Isolation of GaN MOSFET by Boron Ion Implantation,
第60回応用物理学関係連合講演会, Mar. 2013.
14.林野 耕平, 久米 保奈美, 福居 和人, 岩崎 裕一, Jin-Ping Ao and Yasuo Ohno :
高調波遮断フィルタを用いたGaN SBDレクテナ回路の反射抑制,
2013年電子情報通信学会総合大会, Mar. 2013.
15.久米 保奈美, 林野 耕平, 岩崎 裕一, 福井 和人, Jin-Ping Ao and Yasuo Ohno :
高調波反射を遮断した GaN SBD レクテナ回路の特性,
2013年電子情報通信学会総合大会, Mar. 2013.
16.林野 耕平, 岩崎 裕一, 福居 和人, Jin-Ping Ao and Yasuo Ohno :
マイクロ波電力伝送用レクテナ回路の比較,
2011年電子情報通信学会ソサイエティ大会, Sep. 2012.
17.木尾 勇介, 井川 裕介, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETにおけるサイドゲート効果の観測,
第73回応用物理学会学術講演会, Sep. 2012.
18.白石 孝之, 李 柳暗, 岸 明徳, Jin-Ping Ao and Yasuo Ohno :
GaNデバイスにおけるゲート・ファースト・プロセスの検討,
第73回応用物理学会学術講演会, Sep. 2012.
19.岩崎 裕一, 阿部 まみ, 原内 健次, 福居 和人, Jin-Ping Ao and Yasuo Ohno :
60GHz帯チップ間伝送用オープンリング共振器無線接続の評価,
2011年電子情報通信学会総合大会, Mar. 2012.
20.塩入 達明, 岩崎 祐一, 原内 健次, 福居 和人, Jin-Ping Ao and Yasuo Ohno :
オープンリング共振器無線送電への水濡れの影響,
2011年電子情報通信学会総合大会, Mar. 2012.
21.林野 耕平, 原内 健次, 岩崎 裕一, 福居 和人, Jin-Ping Ao and Yasuo Ohno :
GaNショットキーダイオードを用いたレクテナ回路の損失分析,
2011年電子情報通信学会総合大会, Mar. 2012.
22.福居 和人, 竹内 太郎, 林野 耕平, 原内 健次, 岩崎 裕一, Jin-Ping Ao and Yasuo Ohno :
マイクロ波整流用GaN ショットキーダイオードの特性改善,
2012年電子情報通信学会総合大会, Mar. 2012.
23.細川 大志, 井川 裕介, 木尾 勇介, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET電流コラプスの回復機構,
第59回応用物理学関係連合講演会, Mar. 2012.
24.Wang Qingpeng, Tamai Kentaro, Miyashita Takahiro, Motoyama Shin-ichi, Wang Dejun, Jin-Ping Ao and Yasuo Ohno :
Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure,
第59回応用物理学関係連合講演会, Mar. 2012.
25.玉井 健太郎, 王 青鵬, 宮下 準弘, 本山 慎一, 王 徳君, Jin-Ping Ao and Yasuo Ohno :
GaN MOSFET 電気特性へのチャネルリセスエッチングの影響,
第59回応用物理学関係連合講演会, Mar. 2012.
26.原内 健次, 岩崎 裕一, 林野 耕平, Jin-Ping Ao, 篠原 真毅, 外村 博史 and Yasuo Ohno :
オープンリング共振器とGaNショットキーダイオードを用いた無線電力伝送,
2011年電子情報通信学会ソサイエティ大会, Sep. 2011.
27.岩崎 裕一, 原内 健次, 福居 和人, Jin-Ping Ao and Yasuo Ohno :
電力伝送用オープンリング共振器無線接続の評価,
2011年電子情報通信学会ソサイエティ大会, Sep. 2011.
28.細川 大志, 井川 裕介, 木尾 勇介, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET電流コラプス回復の温度依存性,
第72回応用物理学会学術講演会, Sep. 2011.
29.細川 大志, 黒田 健太郎, 井谷 祥之, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET 電流コラプスの回復過程測定,
第57回応用物理学関係連合講演会, Mar. 2011.
30.原内 健次, 岩崎 裕一, 阿部 まみ, Jin-Ping Ao, 篠原 真毅, 外村 博史 and Yasuo Ohno :
オープンリング共振器接続によるマイクロ波無線電力伝送,
2011年電子情報通信学会総合大会, Mar. 2011.
31.細川 大志, 原内 健次, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN横型ショットキーダイオードの二次元デバイスシミュレーション,
第71回応用物理学会学術講演会, Sep. 2010.
32.原内 健次, 細川 大志, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN横型ショットキーダイオードのSパラメータ解析,
第71回応用物理学会学術講演会, Sep. 2010.
33.阿部 まみ, Jin-Ping Ao and Yasuo Ohno :
オープンリング共振器無線接続における基板抵抗の影響,
第71回応用物理学会学術講演会, Sep. 2010.
34.黒田 健太郎, 井川 裕介, 光山 健太, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET電流コラプスにおける光照射の影響,
第57回応用物理学関係連合講演会, Mar. 2010.
35.中谷 克俊, 祖川 雄司, 金 栄現, Jin-Ping Ao, Yasuo Ohno, 宮下 準弘 and 本山 慎一 :
プラズマCVD酸化膜を用いたGaN MOSFET,
第57回応用物理学関係連合講演会, Mar. 2010.
36.阿部 まみ, 倉本 健次, 天羽 孝文, Jin-Ping Ao and Yasuo Ohno :
誘電率の異なる基板間でのオープンリング共振器無線接続,
2010年電子情報通信学会総合大会, Mar. 2010.
37.阿部 まみ, 倉本 健次, Jin-Ping Ao and Yasuo Ohno :
オープンリング共振器無線接続における基板抵抗の影響,
2009年電子情報通信学会ソサイエティ大会, Sep. 2009.
38.倉本 健次, 阿部 まみ, 奥山 祐加, Jin-Ping Ao and Yasuo Ohno :
オープンリング共振器を用いた非接触広帯域入出力インターフェイス,
2009年電子情報通信学会ソサイエティ大会, Sep. 2009.
39.高橋 健介, Jin-Ping Ao, 胡 成余, 篠原 真毅, 丹羽 直幹 and Yasuo Ohno :
マイクロ波電力整流用GaNショットキーダイオードのSパラメータ解析,
2009年電子情報通信学会ソサイエティ大会, Sep. 2009.
40.黒田 健太郎, 井川 裕介, 胡 成余, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET電流コラプスのステップストレス測定,
第70回応用物理学会学術講演会, Sep. 2009.
41.胡 成余, 中谷 克俊, Jin-Ping Ao, 菊田 大悟, 杉本 雅裕 and Yasuo Ohno :
p層上デュアルゲートAlGaN/GaN HFETにおけるアバランシェホール電流の測定,
第56回応用物理学関係連合講演会, Mar. 2009.
42.井川 裕介, 湯浅 頼英, 胡 成余, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETにおける仮想ゲート型電流コラプスのSPICE回路モデル,
第56回応用物理学関係連合講演会, Mar. 2009.
43.澤田 剛一, Jin-Ping Ao, 許 恒宇, 高橋 健介, 胡 成余, 河合 弘治, 篠原 真毅, 丹羽 直幹 and Yasuo Ohno :
p型表面層を持つマイクロ波整流用GaNショットキーバリアダイオード,
第56回応用物理学関係連合講演会, Mar. 2009.
44.宮田 侑是, 篠原 真毅, 三谷 友彦, 丹羽 直幹, 高木 賢二, 浜本 研一, 宇治 川智, 高橋 健介, Jin-Ping Ao and Yasuo Ohno :
GaNショットキーダイオードを用いた大電力レクテナの研究開発,
2009年電子情報通信学会総合大会, Mar. 2009.
45.井川 裕介, 湯浅 頼英, 胡 成余, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETのゲートエッジ表面負帯電におけるDC特性の解析,
第69回応用物理学会学術講演会, Sep. 2008.
46.胡 成余, 中谷 克俊, Jin-Ping Ao, 菊田 大悟, 杉本 雅裕 and Yasuo Ohno :
AlGaN/GaN HFET VT-VSUB特性を用いたp-GaN上バッファ層の評価,
第69回応用物理学会学術講演会, Sep. 2008.
47.Jin-Ping Ao, 許 恒宇, 于 僡, 胡 成余 and Yasuo Ohno :
Ni拡散によるAlGaN/GaN HFET素子分離,
第69回応用物理学会学術講演会, Sep. 2008.
48.高橋 健介, 伊藤 秀起, 原内 貴司, 岡田 政也, 胡 成余, Jin-Ping Ao, 河合 弘治, 篠原 真毅, 丹羽 直幹, Yasuo Ohno and 井川 裕介 :
GaNを用いたマイクロ波整流用ショットキーバリアダイオード,
第55回応用物理学関係連合講演会, Mar. 2008.
49.胡 成余, Jin-Ping Ao, 河合 弘治 and Yasuo Ohno :
p-基板層付きAlGaN/GaN HFETのVt-Vsub特性,
第55回応用物理学関係連合講演会, Mar. 2008.
50.伊藤 秀起, 高橋 健介, 原内 貴司, 岡田 政也, 胡 成余, Jin-Ping Ao, 河合 弘治, 篠原 真毅, 丹羽 直幹, Yasuo Ohno and 井川 裕介 :
マイクロ波整流用GaNショットキーダイオードの特性評価,
2008年電子情報通信学会総合大会, Mar. 2008.
51.奥山 祐加, 柏原 俊彦, Jin-Ping Ao, 粟井 郁雄 and Yasuo Ohno :
オープンリング共振器を用いたチップ間マイクロ波信号伝送,
2007年電子情報通信学会ソサイエティ大会, Sep. 2007.
52.Jin-Ping Ao, 澤田 剛一, 新海 聡子, 岡田 政也, 胡 成余, 廣瀬 和之, 河合 弘治 and Yasuo Ohno :
TiNゲートAlGaN/GaN HFETの特性評価,
第68回応用物理学会学術講演会, Sep. 2007.
53.胡 成余, 岡田 政也, Jin-Ping Ao and Yasuo Ohno :
Ni処理を用いたドライエッチp‐GaNへの低抵抗オーミック形成,
第68回応用物理学会学術講演会, Sep. 2007.
54.澤田 剛一, 新海 聡子, Jin-Ping Ao, 岡田 政也, 胡 成余, 廣瀬 和之, 河合 弘治 and Yasuo Ohno :
n‐GaNへの高温処理ZrN電極ショットキー特性,
第68回応用物理学会学術講演会, Sep. 2007.
55.野久 保宏幸, 岡田 政也, 胡 成余, Jin-Ping Ao and Yasuo Ohno :
GaN MISダイオードによる絶縁膜界面評価,
第68回応用物理学会学術講演会, Sep. 2007.
56.Yasuo Ohno, 山岡 優哉, 岡田 政也, 胡 成余 and Jin-Ping Ao :
ゲートストレスバイアスによるAlGaN/GaN MIS HFETの電流コラプス評価,
第68回応用物理学会学術講演会, Sep. 2007.
57.岡田 政也, 国貞 雅也, Jin-Ping Ao, 河合 弘治 and Yasuo Ohno :
GaN/AlGaN/GaNフォトトランジスタを用いたUVセンサ回路,
2007年電子情報通信学会総合大会, Mar. 2007.
58.菅 良太, Hiroaki Satoh, Jin-Ping Ao, Shinsuke Konaka, Tadamitsu Iritani and Yasuo Ohno :
オープンリング共振器を用いたチップ間ミリ波信号伝送,
2006年電子情報通信学会ソサイエティ大会, Sep. 2006.
59.山岡 優哉, 岡田 政也, Jin-Ping Ao, 河合 弘治 and Yasuo Ohno :
AlGaN/GaN HFETしきい電圧のゲートストレスバイアス依存性,
第67回応用物理学会学術講演会, Aug. 2006.
60.石尾 隆幸, 岡田 政也, Jin-Ping Ao, 廣瀬 和之, 河合 弘治 and Yasuo Ohno :
AlGaN/GaN HFETしきい電圧の温度依存性の測定,
第67回応用物理学会学術講演会, Aug. 2006.
61.岡田 政也, 松浦 一暁, Jin-Ping Ao, 河合 弘治 and Yasuo Ohno :
GaNキャップ層ピエゾ電荷を用いたエンハンスメントモードAlGaN/GaN HFET,
第67回応用物理学会学術講演会, Aug. 2006.
62.Jin-Ping Ao, 長岡 史郎, 岩崎 聡一郎, 岡田 政也, 大巻 雄治 and Yasuo Ohno :
EB露光CuゲートAlGaN/GaN HFETの高周波特性,
第53回応用物理学関係連合講演会, Mar. 2006.
63.松浦 一暁, 菊田 大悟, Jin-Ping Ao, 扇谷 浩通, 平本 道広, 河合 弘治 and Yasuo Ohno :
SiCl4ガスを用いたICP-RIEによるAlGaN/GaN HFETのゲートリセスエッチング,
第53回応用物理学関係連合講演会, Mar. 2006.
64.松田 義和, 菅 良太, 山岡 優哉, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET構造を用いたショットキーダイオード,
平成17年度電気関係学会四国支部連合大会, Sep. 2005.
65.松田 潤也, 菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
周波数可変カーブトレーサを用いたAlGaN/GaN MIS-HFETヒステリシスの解析,
第66回応用物理学会学術講演会, Sep. 2005.
66.菅 良太, 平尾 敏雄, 小野田 忍, 伊藤 久義, 岡田 英輝, 岡田 政也, 菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET電気特性へγ線照射の影響,
第66回応用物理学会学術講演会, Sep. 2005.
67.菊田 大悟, Jin-Ping Ao, 松田 潤也 and Yasuo Ohno :
AlGaN/GaN MIS-HFET のエンハンスメント動作,
第52回応用物理学関係連合講演会, Apr. 2005.
68.岡田 政也, 高木 亮平, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETしきい値電圧の温度及び光照射依存性,
第52回応用物理学関係連合講演会, Mar. 2005.
69.高木 亮平, 岡田 政也, 菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
熱酸化によるAlGaN/GaN MIS-HFETゲート電流の低減,
第52回応用物理学関係連合講演会, Mar. 2005.
70.岡田 政也, 高木 亮平, 菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET 電流電圧特性における光応答,
第65回応用物理学会学術講演会, Sep. 2004.
71.高木 亮平, 岡田 政也, 菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETのサイドゲート効果における光の影響,
日本物理学会中四国支部,応用物理学会中四国支部,物理教育学会四国支部連絡協議会2004年度支部学術講演会, Jul. 2004.
72.赤松 志郎, 菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET I-V特性のヒステリシス,
第51回応用物理学関係連合講演会, Mar. 2004.
73.西薗 和博, 岡田 政也, 亀井 稔, Jin-Ping Ao, Kikuo Tominaga and Yasuo Ohno :
ZnO : Al キャップ層を用いたセルフアラインリセス構造AlGaN/GaN HFET,
第51回応用物理学関係連合講演会, Mar. 2004.
74.菊田 大悟, Jin-Ping Ao, 久保田 尚孝, 松田 潤也, 赤松 志郎 and Yasuo Ohno :
AlGaN/GaN MIS-HFET ドレイン電流のゲートバイアスステップ応答,
第51回応用物理学関係連合講演会, Mar. 2004.
75.岡田 政也, 菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETパルスI-V特性シミュレーション,
電子情報通信学会2004年綜合大会, Mar. 2004.
76.亀井 稔, 岡田 政也, 西薗 和博, Jin-Ping Ao, Kikuo Tominaga and Yasuo Ohno :
AlGaN/GaN上ZnO:Al膜のアニール特性評価,
平成15年度電気関係学会四国支部連合大会, Oct. 2003.
77.Yasuo Ohno and Jin-Ping Ao :
サファイア基板CuゲートAlGaN/GaN HEMT,
第64回応用物理学会学術講演会, Sep. 2003.
78.岡田 政也, 亀井 稔, 西薗 和博, Jin-Ping Ao, Kikuo Tominaga and Yasuo Ohno :
ZnO/Metalを用いたAlGaN/GaN用オーミック電極の検討,
第64回応用物理学会学術講演会, Sep. 2003.
79.菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN SiOx MOS-HFETの相互コンダクタンス周波数分散,
第64回応用物理学会学術講演会, Sep. 2003.
80.Jin-Ping Ao, Kubota Naotaka, Wang Hong-Xing, Liu Yu-Huai, Kikuta Daigo, Yoshiki Naoi, Shiro Sakai and Yasuo Ohno :
Thermal Stability of Copper Schottky Contact on AlGaN/GaN and n-GaN,
第50回応用物理学関係連合講演会, Mar. 2003.
81.久保田 尚孝, Jin-Ping Ao, 王 宏興, 劉 玉懐, 菊田 大悟, Yoshiki Naoi, Shiro Sakai and Yasuo Ohno :
n-GaN上のCu及びNi/Auショットキーコンタクトの比較,
第50回応用物理学関係連合講演会, Mar. 2003.
82.菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
界面準位を考慮したオープンゲートFETの3次元デバイスシミュレーション,
第50回応用物理学関係連合講演会, Mar. 2003.
83.西薗 和博, 岡田 政也, 亀井 稔, Jin-Ping Ao, Kikuo Tominaga and Yasuo Ohno :
AlGaN/GaNに対するZnOオーミック電極の検討,
第50回応用物理学関係連合講演会, Mar. 2003.
84.亀井 稔, 岡田 政也, 西薗 和博, Jin-Ping Ao, Kikuo Tominaga and Yasuo Ohno :
AlGaN/GaN上ZnO:Alスパッタ膜の電気特性評価,
第50回応用物理学関係連合講演会, Mar. 2003.
85.Jin-Ping Ao, Kikuta Daigo and Yasuo Ohno :
Copper Gate AlGaN/GaN HEMT with Low Gate Leakage Current,
第63回応用物理学会学術講演会, Sep. 2002.
86.菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
オープンゲートFETによるAlGaN/GaN HEMT構造の表面準位測定,
第63回応用物理学会学術講演会, Sep. 2002.
87.Jin-Ping Ao, Wang Tao, Kikuta Daigo, Liu Yu-Huai, Shiro Sakai and Yasuo Ohno :
AlGaN/GaN HEMT with Thin Buffer Layer on Sapphire Substrate,
応用物理学会講演会, Mar. 2002.

Et cetera, Workshop:

1.Shigeki Fujiwara Joseph Luke, Jin-Ping Ao, 大塚 良, 山本 剛士, Satoru Eguchi, Kazumi Takaishi and Hiroshi Kitahata :
ワイヤレス給電式医療機器の作成と臨床応用に向けた試み,
第33 回中国・四国歯科麻酔研究会, Sep. 2018.
2.Kensaku Yagi, Kazuya Goto and Jin-Ping Ao :
低温オーミックプロセスを用いた AlGaN/GaN HFET に関する研究,
2017年度応用物理学会中国市国支部若手半導体研究会, Aug. 2017.
3.Zhang Fuzhe, Jiang Ying, Wang Qingpeng, Shinkai Satoko and Jin-Ping Ao :
Device isolation for GaN MOSFETs with boron ion implantation,
2015年度応用物理学会中国四国支部若手半導体研究会, Aug. 2015.
4.Fujihara Ryota, Hamaguchi Keiko, Yasuo Ohno and Jin-Ping Ao :
Characteristics of GaN Schottky barrier diode on Si substrate for microwave power rectification,
2015年度応用物理学会中国四国支部若手半導体研究会, Aug. 2015.
5.Zhang Tong, Li Liuan, Wang Lei and Jin-Ping Ao :
Characterization of NiO synthesized by reactive sputtering,
2015年度応用物理学会中国四国支部若手半導体研究会, Aug. 2015.
6.後藤 和也, 矢木 健策 and Jin-Ping Ao :
セルフアラインゲート構造を有するサブミクロンAlGaN/GaN HFETの試作と評価,
2015年度応用物理学会中国四国支部若手半導体研究会, Aug. 2015.
7.前田 裕太郎, 王 磊 and Jin-Ping Ao :
AlGaN/GaN ヘテロ構造を用いたpHセンサの表面依存性,
2015年度応用物理学会中国四国支部若手半導体研究会, Aug. 2015.
8.王 磊, 張 家琦, 王 青鵬, 前田 裕太郎 and Jin-Ping Ao :
ICP処理を用いたAlGaN/GaN HFETの低温オーミックコンタクトの研究,
2015年度応用物理学会中国四国支部若手半導体研究会, Aug. 2015.
9.Jin-Ping Ao :
AlGaN/GaNヘテロ構造上pHセンサの研究,
第14回エンジニアリングフェスティバル, Sep. 2014.
10.楢野 和宏, 前田 裕太郎, 新潟 一宇, 王 磊 and Jin-Ping Ao :
AlGaN/GaNヘテロ構造を用いたpHセンサへの表面処理の影響,
2014年度応用物理学会中国四国支部若手半導体研究会, Jul. 2014.
11.井川 裕介, 李 根三, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETサイドゲート効果の2次元デバイスシミュレーション,
電子情報通信学会電子デバイス研究会, Jan. 2014.
12.ケイ ショウシン, 王 青鵬, 江 瀅 and Jin-Ping Ao :
AlGaN/GaN ヘテロ構造上GaN MOSFETの移動度の評価,
2013年度応用物理学会中国四国支部若手半導体研究会, Jul. 2013.
13.玉井 健太郎, Jin-Ping Ao, 菊田 大悟, 杉本 雅裕 and Yasuo Ohno :
AlGaN/GaN MISHFETチャネル電子移動度の測定,
電子情報通信学会電子デバイス研究会, Jul. 2012.
14.原内 健次, 岩崎 裕一, 林野 耕平, 塩入 達明, 福居 和人, Jin-Ping Ao, Yasuo Ohno, 篠原 真毅 and 外村 博史 :
GaN SBDとオープンリング共振器を用いた非接触マイクロ波電力伝送,
第10回無線電力伝送時限研究専門委員会研究会, Mar. 2012.
15.細川 大志, 井川 裕介, 木尾 勇介, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFET電流コラプスの回復過程解析,
電子情報通信学会電子デバイス研究会, Nov. 2011.
16.原内 健次, 岩崎 裕一, 林野 耕平, Jin-Ping Ao, 篠原 真毅, 外村 博史 and Yasuo Ohno :
オープンリング共振器とGaN SBDを用いたマイクロ波電力伝送,
第8回無線電力伝送時限研究専門委員会(通算36回)研究会, Oct. 2011.
17.高橋 健介, Jin-Ping Ao, 篠原 真毅, 丹羽 直幹, 藤原 暉雄 and Yasuo Ohno :
マイク ロ波無線ユビキタス電源用GaNショットキーダイオードの開発,
電子情報通信学会電子デバイス,電子部品・材料,レーザ・量子エレクトロニクス研究会, Nov. 2009.
18.黒田 健太郎, 井川 裕介, 光山 健太, Jin-Ping Ao and Yasuo Ohno :
ステップストレス測定によるAlGaN/GaN HFET電流コラプス解析,
電子情報通信学会電子デバイス,電子部品・材料,レーザ・量子エレクトロニクス研究会, Nov. 2009.
19.野崎 兼史, 高橋 義也, Jin-Ping Ao and Yasuo Ohno :
オープンゲートAlGaN/GaN HFETの電解質溶液を介した電流制御,
電子情報通信学会センサーデバイス・MEMS・一般研究会, Jul. 2009.
20.Jin-Ping Ao and Yasuo Ohno :
Refractory Metal Nitride Schottky Contact on GaN,
15th National conference on Compound Semiconductor Materials, Microwave Devices and Optoelectronic Devices (China), Nov. 2008.
21.Yasuo Ohno and Jin-Ping Ao :
Future Applications of GaN Electron Devices,
15th National conference on Compound Semiconductor Materials, Microwave Devices and Optoelectronic Devices (China), Nov. 2008.
22.井川 裕介, 湯浅 頼英, 胡 成余, Jin-Ping Ao and Yasuo Ohno :
AlGaN/GaN HFETのゲートエッジ負帯電による電流コラプスの2次元数値解析,
電気学会電子材料研究会, Nov. 2008.
23.胡 成余, 中谷 克俊, Jin-Ping Ao, Yasuo Ohno, 菊田 大悟 and 杉本 雅裕 :
VT-VSUB特性を用いたp-GaN上のAlGaN/GaN HFETバッファ層評価,
電気学会電子材料研究会, Nov. 2008.
24.Jin-Ping Ao, Kikuta Daigo and Yasuo Ohno :
Copper-Gate AlGaN/GaN HEMTs with Low Gate Leakage Current,
電子情報通信学会電子デバイス研究会, Vol.ED2002-211, Oct. 2002.
25.菊田 大悟, Jin-Ping Ao and Yasuo Ohno :
オープンゲートFETによるAlGaN/GaN HEMT構造の表面準位測定,
電子情報通信学会電子デバイス研究会, Vol.ED2002-210, Oct. 2002.
26.Yasuo Ohno and Jin-Ping Ao :
デバイスの微細化限界と窒化ガリウムトランジスタ,
電子情報通信学会電子デバイス研究会, Vol.ED2002-90, Jun. 2002.

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

  • ワイヤレス給電式医療機器の導入に向けた試み (Project/Area Number: 18K08857 )
  • Development of GaN pH sensor for the surveillance of cell culture (Project/Area Number: 22560332 )
  • Investigation of Refractory Metal Gate on AlGaN/GaN HFET (Project/Area Number: 18560337 )
  • Search by Researcher Number (40380109)