=== Generating (published_papers) ===
=== Generating (research_interests) ===
=== Generating (teaching_experience) ===
=== Generating (education) ===
=== Generating (research_experience) ===
=== Generating (misc) ===
=== Generating (research_projects) ===
=== Generating (industrial_property_rights) ===
=== Generating (committee_memberships) ===
=== Generating (awards) ===
=== Generating (association_memberships) ===
=== Generating (presentations) ===
==== begin registerFile(/WWW/pub2/data/ERD/person/82121/researchmap/published_papers.jsonl) ====
line:1, {"insert":{"user_id":"B000339803","type":"published_papers","id":"48272606"},"force":{"see_also":[{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/119637","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=414862","label":"url"}],"paper_title":{"en":"Quenching high-temperature phase in CuSn alloy system by femtosecond and picosecond laser irradiation","ja":"Quenching high-temperature phase in CuSn alloy system by femtosecond and picosecond laser irradiation"},"authors":{"en":[{"name":"Furuichi Taketo"},{"name":"Seki Hiroto"},{"name":"Kawano Taiyo"},{"name":"Takabayashi Keisuke"},{"name":"Endo Tsubasa"},{"name":"Tsuchiya Eibon"},{"name":"Yamaguchi Makoto"},{"name":"Kobayashi Yohei"},{"name":"Okada Tatsuya"},{"name":"Tomita Takuro"}],"ja":[{"name":"古市 健人"},{"name":"関 宏都"},{"name":"河野 太洋"},{"name":"Takabayashi Keisuke"},{"name":"Endo Tsubasa"},{"name":"Tsuchiya Eibon"},{"name":"Yamaguchi Makoto"},{"name":"Kobayashi Yohei"},{"name":"岡田 達也"},{"name":"富田 卓朗"}]},"publication_date":"2024-10-22","publication_name":{"en":"Applied Physics. A, Materials Science & Processing","ja":"Applied Physics. A, Materials Science & Processing"},"volume":"Vol.130","starting_page":"818(1)","ending_page":"818(8)","languages":["eng"],"referee":true,"identifiers":{"issn":["0947-8396"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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line:3, {"insert":{"user_id":"B000339803","type":"published_papers","id":"43540151"},"force":{"see_also":[{"@id":"http://repo.lib.tokushima-u.ac.jp/118600","label":"url"},{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/118600","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1050861074219734144/","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-85173009905&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=403195","label":"url"}],"paper_title":{"en":"Pulse Duration Dependence of Novel Metal Alloying on Fe/Cr/Ni Thin Films by Ultra-Short Pulsed Laser Irradiation","ja":"Pulse Duration Dependence of Novel Metal Alloying on Fe/Cr/Ni Thin Films by Ultra-Short Pulsed Laser Irradiation"},"authors":{"en":[{"name":"Kawano Taiyoh"},{"name":"Furuichi Taketo"},{"name":"Tsuchiya Eibon"},{"name":"Yamaguchi Makoto"},{"name":"Okada Tatsuya"},{"name":"Kobayashi Yohei"},{"name":"Tomita Takuro"}],"ja":[{"name":"河野 太洋"},{"name":"古市 健人"},{"name":"Tsuchiya Eibon"},{"name":"Yamaguchi Makoto"},{"name":"岡田 達也"},{"name":"Kobayashi Yohei"},{"name":"富田 卓朗"}]},"description":{"en":"We examined the possibility of suppressing elemental segregation of high-entropy alloys (HEAs) using femtosecond laser irradiation. Thin films of iron (Fe), chromium (Cr), and nickel (Ni) were deposited on the surfaces of n-type SiC and p-type GaN substrates. The thicknesses of the Fe, Cr, and Ni films were 12, 7, and 11 nm, respectively. Laser irradiation was performed from the substrate side by focusing on the interface between the Fe film and substrate. Scanning transmission electron microscopy (STEM) bright-field images superimposed on the elemental maps of Fe, Cr, and Ni showed a more homogenous mixing of Fe, Cr, and Ni in the femtosecond-laser-modified region than in the picosecond-laser-modified region. In particular, the Ni distribution showed a significant improvement in homogeneity. In other words, the Ni mixture was more homogeneous in the femtosecond laser-modified region than in the picosecond laser-modified region. Although the duration of the picosecond laser pulse was sufficiently long for atomic diffusion, segregation still occurred during the cooling process following laser irradiation.","ja":"We examined the possibility of suppressing elemental segregation of high-entropy alloys (HEAs) using femtosecond laser irradiation. Thin films of iron (Fe), chromium (Cr), and nickel (Ni) were deposited on the surfaces of n-type SiC and p-type GaN substrates. The thicknesses of the Fe, Cr, and Ni films were 12, 7, and 11 nm, respectively. Laser irradiation was performed from the substrate side by focusing on the interface between the Fe film and substrate. Scanning transmission electron microscopy (STEM) bright-field images superimposed on the elemental maps of Fe, Cr, and Ni showed a more homogenous mixing of Fe, Cr, and Ni in the femtosecond-laser-modified region than in the picosecond-laser-modified region. In particular, the Ni distribution showed a significant improvement in homogeneity. In other words, the Ni mixture was more homogeneous in the femtosecond laser-modified region than in the picosecond laser-modified region. Although the duration of the picosecond laser pulse was sufficiently long for atomic diffusion, segregation still occurred during the cooling process following laser irradiation."},"publication_date":"2023-09-13","publication_name":{"en":"Journal of Laser Micro/Nanoengineering","ja":"Journal of Laser Micro/Nanoengineering"},"volume":"Vol.18","number":"No.2","starting_page":"100","ending_page":"104","languages":["eng"],"referee":true,"identifiers":{"issn":["1880-0688"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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line:29, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-84877677945&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=258718","label":"url"}],"paper_title":{"en":"Laser-Scanning Direction Effect in Femtosecond Laser-Assisted Etching","ja":"Laser-Scanning Direction Effect in Femtosecond Laser-Assisted Etching"},"authors":{"en":[{"name":"Matsuo Shigeki"},{"name":"Umeda Yoshifumi"},{"name":"Tomita Takuro"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"松尾 繁樹"},{"name":"梅田 善文"},{"name":"富田 卓朗"},{"name":"橋本 修一"}]},"description":{"en":"In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing parameters (pitch and pulse energy) was examined.","ja":"In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing parameters (pitch and pulse energy) was examined."},"publication_date":"2013-01","publication_name":{"en":"Journal of Laser Micro/Nanoengineering","ja":"Journal of Laser Micro/Nanoengineering"},"volume":"Vol.8","number":"No.1","starting_page":"35","ending_page":"38","languages":["eng"],"referee":true,"identifiers":{"doi":["10.2961/jlmn.2013.01.0008"],"issn":["1880-0688"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:30, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.ncbi.nlm.nih.gov/pubmed/23388759","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=259025","label":"url"}],"paper_title":{"en":"Experimental verification of femtosecond laser ablation schemes by time-resolved soft x-ray reflective imaging","ja":"Experimental verification of femtosecond laser ablation schemes by time-resolved soft x-ray reflective imaging"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Yamamoto Minoru"},{"name":"Hasegawa Noboru"},{"name":"Terakawa Kota"},{"name":"Minami Yasuo"},{"name":"Nishikino Masaharu"},{"name":"Ishino Masahiko"},{"name":"Kaihori Takeshi"},{"name":"Ochi Yoshihiro"},{"name":"Kawachi Tetsuya"},{"name":"Yamagiwa Mitsuru"},{"name":"Suemoto Tohru"}],"ja":[{"name":"富田 卓朗"},{"name":"Yamamoto Minoru"},{"name":"Hasegawa Noboru"},{"name":"Terakawa Kota"},{"name":"Minami Yasuo"},{"name":"Nishikino Masaharu"},{"name":"Ishino Masahiko"},{"name":"Kaihori Takeshi"},{"name":"Ochi Yoshihiro"},{"name":"Kawachi Tetsuya"},{"name":"Yamagiwa Mitsuru"},{"name":"Suemoto Tohru"}]},"description":{"en":"Pump and probe reflective imaging using a soft x-ray laser probe was applied to the observation of the early stage of femtosecond laser ablation process on platinum. In strongly excited area, drastic and fast reflectivity drop was observed. In moderately excited area, the decay of the reflectivity is slower than that in the strongly excited area, and the reflectivity reaches its minimum at t = 160 ps. In weakly excited area, laser-induced reflectivity change was not observed. In addition, the point where the reflectivity dip was observed at t = 10 ps and t = 40 ps, coincides with the position of the edge of reflectivity drop at t = 160 ps. These results give the critical information about the femtosecond laser ablation.","ja":"Pump and probe reflective imaging using a soft x-ray laser probe was applied to the observation of the early stage of femtosecond laser ablation process on platinum. In strongly excited area, drastic and fast reflectivity drop was observed. In moderately excited area, the decay of the reflectivity is slower than that in the strongly excited area, and the reflectivity reaches its minimum at t = 160 ps. In weakly excited area, laser-induced reflectivity change was not observed. In addition, the point where the reflectivity dip was observed at t = 10 ps and t = 40 ps, coincides with the position of the edge of reflectivity drop at t = 160 ps. These results give the critical information about the femtosecond laser ablation."},"publication_date":"2012-12","publication_name":{"en":"Optics Express","ja":"Optics Express"},"volume":"Vol.20","number":"No.28","starting_page":"29329","ending_page":"29337","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1364/OE.20.029329"],"issn":["1094-4087"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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line:32, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000104136/","label":"url"},{"@id":"https://repo.lib.tokushima-u.ac.jp/ja/110898","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1050001337466226688/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=254935","label":"url"}],"paper_title":{"en":"Microscopic Raman mapping of epitaxial graphene on 4H-SiC (0001)","ja":"Microscopic Raman mapping of epitaxial graphene on 4H-SiC (0001)"},"authors":{"en":[{"name":"Ryongsok O"},{"name":"Iwamoto Atsushi"},{"name":"Nishi Yuki"},{"name":"Funase Yuya"},{"name":"Yuasa Takahiro"},{"name":"Tomita Takuro"},{"name":"Nagase Masao"},{"name":"Hibino Hiroki"},{"name":"Yamaguchi Hiroshi"}],"ja":[{"name":"Ryongsok O"},{"name":"Iwamoto Atsushi"},{"name":"Nishi Yuki"},{"name":"Funase Yuya"},{"name":"Yuasa Takahiro"},{"name":"富田 卓朗"},{"name":"永瀬 雅夫"},{"name":"日比野 浩樹"},{"name":"山口 浩司"}]},"description":{"en":"We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3--4 layers) induced phonon softening ({im}6 cm-1) and broadening ({im}6 cm-1) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak.","ja":"We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3--4 layers) induced phonon softening ({im}6 cm-1) and broadening ({im}6 cm-1) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak."},"publication_date":"2012-06-20","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.51","number":"No.6","starting_page":"06FD06","ending_page":"(5pp)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.51.06FD06"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:33, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.ncbi.nlm.nih.gov/pubmed/22627524","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=245811","label":"url"}],"paper_title":{"en":"Reduction of Pulse-to-Pulse Fluctuation in Laser Pulse Energy using the Optical Kerr Effect","ja":"Reduction of Pulse-to-Pulse Fluctuation in Laser Pulse Energy using the Optical Kerr Effect"},"authors":{"en":[{"name":"Matsuo Shigeki"},{"name":"Yan Lihe"},{"name":"Si Jinhai"},{"name":"Tomita Takuro"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"松尾 繁樹"},{"name":"Yan Lihe"},{"name":"Si Jinhai"},{"name":"富田 卓朗"},{"name":"橋本 修一"}]},"description":{"en":"An all-optical stabilization method of laser pulse energy is proposed using the optical Kerr effect (OKE). The method uses the OKE induced by a portion of the laser pulse as a power controller. The decrease (increase) in the throughput of the optical setup for OKE compensates for the increase (decrease) in pulse energy, thereby stabilizing the pulse-to-pulse fluctuation in pulse energy. The validity of this principle was proven by experiments with a femtosecond laser.","ja":"An all-optical stabilization method of laser pulse energy is proposed using the optical Kerr effect (OKE). The method uses the OKE induced by a portion of the laser pulse as a power controller. The decrease (increase) in the throughput of the optical setup for OKE compensates for the increase (decrease) in pulse energy, thereby stabilizing the pulse-to-pulse fluctuation in pulse energy. The validity of this principle was proven by experiments with a femtosecond laser."},"publication_date":"2012-05-15","publication_name":{"en":"Optics Letters","ja":"Optics Letters"},"volume":"Vol.37","number":"No.10","starting_page":"1646","ending_page":"1648","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1364/OL.37.001646"],"issn":["1539-4794"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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line:35, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/40019138080/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1520009408887527936/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=243371","label":"url"}],"paper_title":{"en":"Picosecond Soft-X-ray Laser Interferometer for Probing Nanometer Surface Structure","ja":"Picosecond Soft-X-ray Laser Interferometer for Probing Nanometer Surface Structure"},"authors":{"en":[{"name":"Ochi Yoshihiro"},{"name":"Terakawa Kota"},{"name":"Hasegawa Noboru"},{"name":"Yamamoto Minoru"},{"name":"Tomita Takuro"},{"name":"Kawachi Tetsuya"},{"name":"Minami Yasuo"},{"name":"Nishikino Masaharu"},{"name":"Imazono Takashi"},{"name":"Ishino Masahiko"},{"name":"Suemoto Tohru"}],"ja":[{"name":"Ochi Yoshihiro"},{"name":"Terakawa Kota"},{"name":"Hasegawa Noboru"},{"name":"Yamamoto Minoru"},{"name":"富田 卓朗"},{"name":"Kawachi Tetsuya"},{"name":"Minami Yasuo"},{"name":"Nishikino Masaharu"},{"name":"Imazono Takashi"},{"name":"Ishino Masahiko"},{"name":"Suemoto Tohru"}]},"publication_date":"2012-01","publication_name":{"en":"Japanese Journal of Applied Physics","ja":"Japanese Journal of Applied Physics"},"volume":"Vol.51","starting_page":"016601(1-3)","ending_page":"016601(1-3)","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.51.016601"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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line:37, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=230797","label":"url"}],"paper_title":{"en":"Surface roughness assisted 100 kHz femtosecond laser induced nanostructure formation on silicon surface","ja":"Surface roughness assisted 100 kHz femtosecond laser induced nanostructure formation on silicon surface"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Kumai Ryota"},{"name":"Nomura Hidenori"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Morita Ken"},{"name":"Isu Toshiro"}],"ja":[{"name":"富田 卓朗"},{"name":"Kumai Ryota"},{"name":"Nomura Hidenori"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"森田 健"},{"name":"井須 俊郎"}]},"publication_date":"2011-06","publication_name":{"en":"Applied Physics. A, Materials Science & Processing","ja":"Applied Physics. A, Materials Science & Processing"},"volume":"Vol.105","number":"No.1","starting_page":"89","ending_page":"94","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1007/s00339-011-6490-1"],"issn":["0947-8396"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:38, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=227417","label":"url"}],"paper_title":{"en":"Enhancement of local electrical conductivities in SiC by femtosecond laser modification","ja":"Enhancement of local electrical conductivities in SiC by femtosecond laser modification"},"authors":{"en":[{"name":"Deki Manato"},{"name":"Ito Takuto"},{"name":"Yamamoto Minoru"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Kitada Takahiro"},{"name":"Isu Toshiro"},{"name":"Onoda Shinobu"},{"name":"Ohshima Takeshi"}],"ja":[{"name":"Deki Manato"},{"name":"Ito Takuto"},{"name":"Yamamoto Minoru"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"北田 貴弘"},{"name":"井須 俊郎"},{"name":"Onoda Shinobu"},{"name":"Ohshima Takeshi"}]},"publication_date":"2011-03-29","publication_name":{"en":"Applied Physics Letters","ja":"Applied Physics Letters"},"volume":"Vol.98","number":"No.13","starting_page":"133104-1","ending_page":"133104-3","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1063/1.3573786"],"issn":["0003-6951"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:39, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.ncbi.nlm.nih.gov/pubmed/20588544","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=209902","label":"url"}],"paper_title":{"en":"Single-shot picosecond interferometry with one-nanometer resolution for dynamical surface morphology using a soft X-ray laser","ja":"Single-shot picosecond interferometry with one-nanometer resolution for dynamical surface morphology using a soft X-ray laser"},"authors":{"en":[{"name":"Suemoto Tohru"},{"name":"Terakawa Kota"},{"name":"Ochi Yoshihiro"},{"name":"Tomita Takuro"},{"name":"Yamamoto Minoru"},{"name":"Hasegawa Noboru"},{"name":"Deki Manato"},{"name":"Minami Yasuo"},{"name":"Kawachi Tetsuya"}],"ja":[{"name":"Suemoto Tohru"},{"name":"Terakawa Kota"},{"name":"Ochi Yoshihiro"},{"name":"富田 卓朗"},{"name":"Yamamoto Minoru"},{"name":"Hasegawa Noboru"},{"name":"Deki Manato"},{"name":"Minami Yasuo"},{"name":"Kawachi Tetsuya"}]},"description":{"en":"Using highly coherent radiation at a wavelength of 13.9 nm from a Ag-plasma soft X-ray laser, we constructed a pump-and-probe interferometer based on a double Lloyd's mirror system. The spatial resolutions are evaluated with a test pattern, showing 1.8-mum lateral resolution, and 1-nm depth sensitivity. This instrument enables a single-shot observation of the surface morphology with a 7-ps time-resolution. We succeeded in observing a nanometer scale surface dilation of Pt films at the early stage of the ablation process initiated by a 70 fs near infrared pump pulse.","ja":"Using highly coherent radiation at a wavelength of 13.9 nm from a Ag-plasma soft X-ray laser, we constructed a pump-and-probe interferometer based on a double Lloyd's mirror system. The spatial resolutions are evaluated with a test pattern, showing 1.8-mum lateral resolution, and 1-nm depth sensitivity. This instrument enables a single-shot observation of the surface morphology with a 7-ps time-resolution. We succeeded in observing a nanometer scale surface dilation of Pt films at the early stage of the ablation process initiated by a 70 fs near infrared pump pulse."},"publication_date":"2010-06-21","publication_name":{"en":"Optics Express","ja":"Optics Express"},"volume":"Vol.18","number":"No.13","starting_page":"14114","ending_page":"14122","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1364/OE.18.014114"],"issn":["1094-4087"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:40, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=210236","label":"url"}],"paper_title":{"en":"Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC","ja":"Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Okada Tatsuya"},{"name":"Kawahara Hiroyuki"},{"name":"Kumai Ryota"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Kawamoto Masako"},{"name":"Yamaguchi Makoto"},{"name":"Ueno Shigeru"},{"name":"Shindou Emi"},{"name":"Yoshida Akira"}],"ja":[{"name":"富田 卓朗"},{"name":"岡田 達也"},{"name":"Kawahara Hiroyuki"},{"name":"熊井 亮太"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"Kawamoto Masako"},{"name":"Yamaguchi Makoto"},{"name":"Ueno Shigeru"},{"name":"Shindou Emi"},{"name":"Yoshida Akira"}]},"publication_date":"2010-05-29","publication_name":{"en":"Applied Physics. A, Materials Science & Processing","ja":"Applied Physics. A, Materials Science & Processing"},"volume":"Vol.100","number":"No.1","starting_page":"113","ending_page":"117","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1007/s00339-010-5786-x"],"issn":["0947-8396"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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line:43, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=204197","label":"url"}],"paper_title":{"en":"Study of indentation damage in single crystal silicon carbide by using micro Raman spectroscopy","ja":"Study of indentation damage in single crystal silicon carbide by using micro Raman spectroscopy"},"authors":{"en":[{"name":"Yamaguchi Makoto"},{"name":"Fujitsuka Masayuki"},{"name":"Ueno Shigeru"},{"name":"Miura Ichiro"},{"name":"Erikawa Wataru"},{"name":"Tomita Takuro"}],"ja":[{"name":"Yamaguchi Makoto"},{"name":"Fujitsuka Masayuki"},{"name":"Ueno Shigeru"},{"name":"Miura Ichiro"},{"name":"Erikawa Wataru"},{"name":"富田 卓朗"}]},"publication_date":"2010-01","publication_name":{"en":"Materials Science Forum","ja":"Materials Science Forum"},"volume":"Vol.645-648","starting_page":"551","ending_page":"554","languages":["eng"],"referee":true,"identifiers":{"doi":["10.4028/www.scientific.net/MSF.645-648.551"],"issn":["1662-9752"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:44, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-77955448393&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=204196","label":"url"}],"paper_title":{"en":"Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide","ja":"Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Iwami Masahiro"},{"name":"Yamamoto Minoru"},{"name":"Deki Manato"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Nakagawa Yoshinori"},{"name":"Kitada Takahiro"},{"name":"Isu Toshiro"},{"name":"Saito Shingo"},{"name":"Sakai Kiyomi"},{"name":"Onoda Shinobu"},{"name":"Ohshima Takeshi"}],"ja":[{"name":"富田 卓朗"},{"name":"Iwami Masahiro"},{"name":"Yamamoto Minoru"},{"name":"Deki Manato"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"Nakagawa Yoshinori"},{"name":"北田 貴弘"},{"name":"井須 俊郎"},{"name":"Saito Shingo"},{"name":"Sakai Kiyomi"},{"name":"Onoda Shinobu"},{"name":"Ohshima Takeshi"}]},"publication_date":"2010-01","publication_name":{"en":"Materials Science Forum","ja":"Materials Science Forum"},"volume":"Vol.645-648","starting_page":"239","ending_page":"242","languages":["eng"],"referee":true,"identifiers":{"doi":["10.4028/www.scientific.net/MSF.645-648.239"],"issn":["1662-9752"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:45, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/10027013184/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1523106605189982720/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=204191","label":"url"}],"paper_title":{"en":"Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC","ja":"Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC"},"authors":{"en":[{"name":"Yamamoto Minoru"},{"name":"Deki Manato"},{"name":"Takahashi Tomonori"},{"name":"Tomita Takuro"},{"name":"Okada Tatsuya"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Yamaguchi Makoto"},{"name":"Nakagawa Kei"},{"name":"Uehara Nobutomo"},{"name":"Kamano Masaru"}],"ja":[{"name":"Yamamoto Minoru"},{"name":"Deki Manato"},{"name":"Takahashi Tomonori"},{"name":"富田 卓朗"},{"name":"岡田 達也"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"Yamaguchi Makoto"},{"name":"Nakagawa Kei"},{"name":"Uehara Nobutomo"},{"name":"Kamano Masaru"}]},"description":{"en":"A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation.","ja":"A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation."},"publication_date":"2010-01-15","publication_name":{"en":"Applied Physics Express","ja":"Applied Physics Express"},"volume":"Vol.3","number":"No.1","starting_page":"016603-1","ending_page":"016603-3","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/APEX.3.016603"],"issn":["1882-0778"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:46, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=193235","label":"url"}],"paper_title":{"en":"Fourier-transform Infrared Spectroscopy of Femtosecond Laser-modified SiC","ja":"Fourier-transform Infrared Spectroscopy of Femtosecond Laser-modified SiC"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Iwami Masahiro"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Saito Shingo"},{"name":"Sakai Kiyomi"}],"ja":[{"name":"富田 卓朗"},{"name":"岩見 勝弘"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"齋藤 伸吾"},{"name":"阪井 清美"}]},"publication_date":"2009-11-05","publication_name":{"en":"Journal of Laser Micro/Nanoengineering","ja":"Journal of Laser Micro/Nanoengineering"},"volume":"Vol.4","number":"No.3","starting_page":"182","ending_page":"185","languages":["eng"],"referee":true,"identifiers":{"doi":["10.2961/jlmn.2009.03.0007"],"issn":["1880-0688"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:47, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://dx.doi.org/10.1016/j.apsusc.2009.04.065","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=194609","label":"url"}],"paper_title":{"en":"Femtosecond laser-assisted etching of Pyrex glass with aqueous solution of KOH","ja":"Femtosecond laser-assisted etching of Pyrex glass with aqueous solution of KOH"},"authors":{"en":[{"name":"Matsuo Shigeki"},{"name":"Sumi Haruki"},{"name":"Kiyama Satoshi"},{"name":"Tomita Takuro"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"松尾 繁樹"},{"name":"角 治樹"},{"name":"木山 聡"},{"name":"富田 卓朗"},{"name":"橋本 修一"}]},"publication_date":"2009-09-30","publication_name":{"en":"Applied Surface Science","ja":"Applied Surface Science"},"volume":"Vol.255","number":"No.24","starting_page":"9758","ending_page":"9760","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1016/j.apsusc.2009.04.065"],"issn":["0169-4332"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:48, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=194238","label":"url"}],"paper_title":{"en":"Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation","ja":"Formation of periodic strained layers associated with nanovoids inside a silicon carbide single crystal induced by femtosecond laser irradiation"},"authors":{"en":[{"name":"Okada Tatsuya"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Ishida Yoichiro"},{"name":"Kiyama Satoshi"},{"name":"Takahashi Tomonori"}],"ja":[{"name":"岡田 達也"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"Ishida Yoichiro"},{"name":"Kiyama Satoshi"},{"name":"Takahashi Tomonori"}]},"publication_date":"2009-09","publication_name":{"en":"Journal of Applied Physics","ja":"Journal of Applied Physics"},"volume":"Vol.106","number":"No.5","starting_page":"054307-1","ending_page":"054307-4","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1063/1.3211311"],"issn":["0021-8979"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:49, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=194653","label":"url"}],"paper_title":{"en":"Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG","ja":"Cross-sectional morphological profiles of ripples on Si, SiC, and HOPG"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Kumai Ryota"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Yamaguchi Makoto"}],"ja":[{"name":"富田 卓朗"},{"name":"Kumai Ryota"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"Yamaguchi Makoto"}]},"publication_date":"2009-08-11","publication_name":{"en":"Applied Physics. A, Materials Science & Processing","ja":"Applied Physics. A, Materials Science & Processing"},"volume":"Vol.97","number":"No.2","starting_page":"271","ending_page":"276","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1007/s00339-009-5364-2"],"issn":["0947-8396"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:50, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=190326","label":"url"}],"paper_title":{"en":"Laser Fabrication and Manipulation of an Optical Rotator Embedded inside a Transparent Solid Material","ja":"Laser Fabrication and Manipulation of an Optical Rotator Embedded inside a Transparent Solid Material"},"authors":{"en":[{"name":"Kiyama Satoshi"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"Kiyama Satoshi"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"橋本 修一"}]},"publication_date":"2009-04-01","publication_name":{"en":"Journal of Laser Micro/Nanoengineering","ja":"Journal of Laser Micro/Nanoengineering"},"volume":"Vol.4","number":"No.1","starting_page":"18","ending_page":"21","languages":["eng"],"referee":true,"identifiers":{"doi":["10.2961/jlmn.2009.01.0004"],"issn":["1880-0688"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:51, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-63849217018&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=178595","label":"url"}],"paper_title":{"en":"Femtosecond Laser-Induced Surface Patterning on 4H-SiC","ja":"Femtosecond Laser-Induced Surface Patterning on 4H-SiC"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Kumai Ryota"},{"name":"Kinoshita Keita"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Nagase Hirokazu"},{"name":"Nakajima Makoto"},{"name":"Suemoto Tohru"}],"ja":[{"name":"富田 卓朗"},{"name":"Kumai Ryota"},{"name":"Kinoshita Keita"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"Nagase Hirokazu"},{"name":"Nakajima Makoto"},{"name":"Suemoto Tohru"}]},"publication_date":"2009-02","publication_name":{"en":"Materials Science Forum","ja":"Materials Science Forum"},"volume":"Vol.600-603","starting_page":"879","ending_page":"882","languages":["eng"],"referee":true,"identifiers":{"doi":["10.4028/www.scientific.net/MSF.600-603.879"],"issn":["1662-9752"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:52, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TH4-4SWFNXP-3&_user=106892&_coverDate=01%2F01%2F2009&_rdoc=30&_fmt=high&_orig=browse&_srch=doc-info(%23toc%235272%232009%23998829998%23701984%23FLA%23display%23Volume)&_cdi=5272&_sort=d&_docanchor=&_ct=79&_acct=C000008258&_version=1&_urlVersion=0&_userid=106892&md5=967dd33e295a38d17329d7c09fcde4f0","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=177626","label":"url"}],"paper_title":{"en":"Preparation of large-scale 2D zeolite crystal array structures to achieve optical functionality --- 基板上にマイクロメートルスケールの円柱型ゼオライトL結晶を組織的に配列する方法について検討を行った．まず，アスペクト比1程度の粒子を細密構造で縦配列する方法を検討した．次にグルーブ構造の基板に対してアスペクト比の大きい結晶をグルーブに沿って横はい列する方法を検討した．後者は蛍光色素を担持した粒子を用いた場合，励起光の偏光方向に応答することを見出した．ゼオライト結晶の配列による材料作製の方向性を示すことができた．","ja":"Preparation of large-scale 2D zeolite crystal array structures to achieve optical functionality --- 基板上にマイクロメートルスケールの円柱型ゼオライトL結晶を組織的に配列する方法について検討を行った．まず，アスペクト比1程度の粒子を細密構造で縦配列する方法を検討した．次にグルーブ構造の基板に対してアスペクト比の大きい結晶をグルーブに沿って横はい列する方法を検討した．後者は蛍光色素を担持した粒子を用いた場合，励起光の偏光方向に応答することを見出した．ゼオライト結晶の配列による材料作製の方向性を示すことができた．"},"authors":{"en":[{"name":"Hashimoto Shuichi"},{"name":"Samata Kazuo"},{"name":"Shoji Tatsuya"},{"name":"Taira Nobuyuki"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"}],"ja":[{"name":"橋本 修一"},{"name":"Samata Kazuo"},{"name":"Shoji Tatsuya"},{"name":"Taira Nobuyuki"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"}]},"description":{"en":"We examined a method to refine a technique to prepare close-packed monolayers of cylindrical zeolite L crystals tethered on a substrate through covalent linkages, which was developed recently for popular use. We attempted to fabricate both vertical and horizontal-unidirectional alignments of the zeolite particles. The vertical alignment for centimeter scale large areas was achieved on a flat glass substrate by using flat-based zeolite crystals with an aspect ratio (length divided by width) of 1.1 while the crystals with an aspect ratio of 1.7 failed to align vertically. Thus the parameters important for successful alignment were determined. On the other hand, the unidirectional alignment in the horizontal packing structures was achieved by employing pregrooved substrates. We found that the relationship between the sizes of zeolite crystals and grooves is a crucial factor for the preparation of a close-packed structure. In this respect, our present preparation requires further improvements because it resulted in structures with many void spaces. Furthermore, we prepared the zeolite films loaded with unidirectionally aligned dyes to achieve optical functionalities.","ja":"We examined a method to refine a technique to prepare close-packed monolayers of cylindrical zeolite L crystals tethered on a substrate through covalent linkages, which was developed recently for popular use. We attempted to fabricate both vertical and horizontal-unidirectional alignments of the zeolite particles. The vertical alignment for centimeter scale large areas was achieved on a flat glass substrate by using flat-based zeolite crystals with an aspect ratio (length divided by width) of 1.1 while the crystals with an aspect ratio of 1.7 failed to align vertically. Thus the parameters important for successful alignment were determined. On the other hand, the unidirectional alignment in the horizontal packing structures was achieved by employing pregrooved substrates. We found that the relationship between the sizes of zeolite crystals and grooves is a crucial factor for the preparation of a close-packed structure. In this respect, our present preparation requires further improvements because it resulted in structures with many void spaces. Furthermore, we prepared the zeolite films loaded with unidirectionally aligned dyes to achieve optical functionalities."},"publication_date":"2008-11-13","publication_name":{"en":"Microporous and Mesoporous Materials","ja":"Microporous and Mesoporous Materials"},"volume":"Vol.117","number":"No.1-2","starting_page":"220","ending_page":"227","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1016/j.micromeso.2008.06.028"],"issn":["1387-1811"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:53, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://pubs.acs.org/cgi-bin/abstract.cgi/jpccck/asap/abs/jp804647a.html","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=178725","label":"url"}],"paper_title":{"en":"In-situ spectroscopic measurements of laser ablation-induced splitting and agglomeration of metal nanoparticles in solution --- 金フレークに対して溶液中でパルスレーザー照射することにより金ナノ粒子を作製し，その様子を分光法によりその場観察した．溶媒としてドデカンチオールを用いた場合，生成する金ナノ粒子を非常に小さくすることが可能となった．すなわち，プラズモンバンドが消失する2-3nm以下にすることができた．また，水中においてレーザーアブレーションによる金ナノ粒子のサイズ増大と凝集沈殿も観測した．この現象は照射雰囲気に強く依存し，酸素雰囲気下で増強され，アルゴン雰囲気化で抑制された．サイズ増大はレーザー照射中に生成するカチオン種とアニオン種の結合によることが示唆された．","ja":"In-situ spectroscopic measurements of laser ablation-induced splitting and agglomeration of metal nanoparticles in solution --- 金フレークに対して溶液中でパルスレーザー照射することにより金ナノ粒子を作製し，その様子を分光法によりその場観察した．溶媒としてドデカンチオールを用いた場合，生成する金ナノ粒子を非常に小さくすることが可能となった．すなわち，プラズモンバンドが消失する2-3nm以下にすることができた．また，水中においてレーザーアブレーションによる金ナノ粒子のサイズ増大と凝集沈殿も観測した．この現象は照射雰囲気に強く依存し，酸素雰囲気下で増強され，アルゴン雰囲気化で抑制された．サイズ増大はレーザー照射中に生成するカチオン種とアニオン種の結合によることが示唆された．"},"authors":{"en":[{"name":"Werner Daniel"},{"name":"Hashimoto Shuichi"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Makita Yoji"}],"ja":[{"name":"Werner Daniel"},{"name":"橋本 修一"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"Makita Yoji"}]},"description":{"en":"This report describes the pulsed-laser induced events of noble metal flakes and nanoparticles (NPs) in liquids studied by an in situ extinction spectroscopy which allowed the detection of time-dependent events such as the pulverization of flakes concomitantly with the growth of nanoparticles (NPs) and the splitting of NPs into smaller particles. Two key observations were made in the present study. First, we observed a remarkable spectral modification ascribable to a size reduction during the 532 and 1064 nm laser ablation of the flakes from NPs with a characteristic surface plasmon (SP) band to much smaller NPs (< 2-3 nm diameter) devoid of the SP band in neat and highly concentrated dodecanethiol solutions at moderate laser fluences of 0.7-1.3 J/(cm2 pulse). Previously the production of such small particles was not feasible by the 1064 nm laser light. Only in solvents that thermally decompose by the laser irradiation to give graphite shells to cover NPs or by two-step size reduction procedures, i.e. the initial formation of NPs followed by further splitting due to the absorption of the 532 nm laser light, such observations have been made. Thus we demonstrated a superior nature of dodecanethiol as a solvent to protect the NPs from growing over other solvents such as acetone and water. Second, we observed the laser ablation-induced agglomeration of Au NPs leading to immediate flocculation in pure water. The observation taking place in the time scale of minutes is conceptually different from the previously observed photo-induced coagulation (Kimura, J. Phys. Chem.1994, 98, 2143-2147 & J. Phys. Chem., 1994, 98, 11997-12002), in which a photo-enhanced van der Waals attractive force acting on excitation of the SP band is responsible for the coagulation phenomena taking place over many hours. In the present case, small positively-charged particles produced by the laser ablation of Au NPs by a 532 nm nanosecond pulsed-laser irradiation are responsible for immediate combination reactions with intact negatively-charged species giving rise to unstable bigger particles susceptible to developing flocculations. This deduction is based on the retardation effect of the agglomeration observed in various irradiation atmosphere such as Ar, and O2. Thus the present study shed a light on another aspect of the laser ablation in liquids relevant to the time evolution of NP formation and its growth dynamics in seconds and minutes, which was paid less attention before.","ja":"This report describes the pulsed-laser induced events of noble metal flakes and nanoparticles (NPs) in liquids studied by an in situ extinction spectroscopy which allowed the detection of time-dependent events such as the pulverization of flakes concomitantly with the growth of nanoparticles (NPs) and the splitting of NPs into smaller particles. Two key observations were made in the present study. First, we observed a remarkable spectral modification ascribable to a size reduction during the 532 and 1064 nm laser ablation of the flakes from NPs with a characteristic surface plasmon (SP) band to much smaller NPs (< 2-3 nm diameter) devoid of the SP band in neat and highly concentrated dodecanethiol solutions at moderate laser fluences of 0.7-1.3 J/(cm2 pulse). Previously the production of such small particles was not feasible by the 1064 nm laser light. Only in solvents that thermally decompose by the laser irradiation to give graphite shells to cover NPs or by two-step size reduction procedures, i.e. the initial formation of NPs followed by further splitting due to the absorption of the 532 nm laser light, such observations have been made. Thus we demonstrated a superior nature of dodecanethiol as a solvent to protect the NPs from growing over other solvents such as acetone and water. Second, we observed the laser ablation-induced agglomeration of Au NPs leading to immediate flocculation in pure water. The observation taking place in the time scale of minutes is conceptually different from the previously observed photo-induced coagulation (Kimura, J. Phys. Chem.1994, 98, 2143-2147 & J. Phys. Chem., 1994, 98, 11997-12002), in which a photo-enhanced van der Waals attractive force acting on excitation of the SP band is responsible for the coagulation phenomena taking place over many hours. In the present case, small positively-charged particles produced by the laser ablation of Au NPs by a 532 nm nanosecond pulsed-laser irradiation are responsible for immediate combination reactions with intact negatively-charged species giving rise to unstable bigger particles susceptible to developing flocculations. This deduction is based on the retardation effect of the agglomeration observed in various irradiation atmosphere such as Ar, and O2. Thus the present study shed a light on another aspect of the laser ablation in liquids relevant to the time evolution of NP formation and its growth dynamics in seconds and minutes, which was paid less attention before."},"publication_date":"2008-10-08","publication_name":{"en":"The Journal of Physical Chemistry C","ja":"The Journal of Physical Chemistry C"},"volume":"Vol.112","number":"No.43","starting_page":"16801","ending_page":"16808","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1021/jp804647a"],"issn":["1932-7447"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:54, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=180505","label":"url"}],"paper_title":{"en":"Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses","ja":"Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses"},"authors":{"en":[{"name":"Matsuo Shigeki"},{"name":"Tokumi Kensuke"},{"name":"Tomita Takuro"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"松尾 繁樹"},{"name":"徳見 憲亮"},{"name":"富田 卓朗"},{"name":"橋本 修一"}]},"description":{"en":"We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.","ja":"We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing."},"publication_date":"2008-08-29","publication_name":{"en":"Laser Chemistry","ja":"Laser Chemistry"},"volume":"Vol.2008","number":"No.5","starting_page":"892721-1","ending_page":"892721-4","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1155/2008/892721"],"issn":["0278-6273"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:55, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=178322","label":"url"}],"paper_title":{"en":"Laser microfabrication and rotation of ship-in-a-bottle optical rotators","ja":"Laser microfabrication and rotation of ship-in-a-bottle optical rotators"},"authors":{"en":[{"name":"Matsuo Shigeki"},{"name":"Kiyama Satoshi"},{"name":"Shichijo Yoshinori"},{"name":"Tomita Takuro"},{"name":"Hashimoto Shuichi"},{"name":"Hosokawa Yoichiroh"},{"name":"Masuhara Hiroshi"}],"ja":[{"name":"松尾 繁樹"},{"name":"木山 聡"},{"name":"七條 義典"},{"name":"富田 卓朗"},{"name":"橋本 修一"},{"name":"細川 陽一郎"},{"name":"増原 宏"}]},"publication_date":"2008-08-05","publication_name":{"en":"Applied Physics Letters","ja":"Applied Physics Letters"},"volume":"Vol.93","number":"No.5","starting_page":"051107-1","ending_page":"051107-3","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1063/1.2967872"],"issn":["0003-6951"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:56, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=178568","label":"url"}],"paper_title":{"en":"Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface","ja":"Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface"},"authors":{"en":[{"name":"Okada Tatsuya"},{"name":"Kawahara Hiroyuki"},{"name":"Ishida Yoichiro"},{"name":"Kumai Ryota"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"},{"name":"Kawamoto Masako"},{"name":"Makita Yoji"},{"name":"Yamaguchi Makoto"}],"ja":[{"name":"岡田 達也"},{"name":"Kawahara Hiroyuki"},{"name":"Ishida Yoichiro"},{"name":"Kumai Ryota"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"橋本 修一"},{"name":"Kawamoto Masako"},{"name":"槇田 洋二"},{"name":"Yamaguchi Makoto"}]},"publication_date":"2008-08","publication_name":{"en":"Applied Physics. A, Materials Science & Processing","ja":"Applied Physics. A, Materials Science & Processing"},"volume":"Vol.92","number":"No.3","starting_page":"665","ending_page":"668","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1007/s00339-008-4611-2"],"issn":["0947-8396"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:57, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://pubs.acs.org/cgi-binarticle.cgi/jpccck/2008/112/i05/jp075401g.pdf","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=166346","label":"url"}],"paper_title":{"en":"Examination of silver nanoparticle fabrication by pulsed-laser ablation of flakes in primary alcohols --- アルコール中でマイクロメートルサイズの銀フレークのナノ秒レーザーを用いたレーザーアブレーションによる銀ナノ粒子の作製を行った．アルコールの炭素鎖が短い場合，生成するナノ粒子は不安定で凝集したが，プロパノール，ブタノール，ペンタノールでは粒子サイズが小さくかつ安定にナノ粒子が形成された．また，炭素鎖がさらに長い場合はやはり凝集体を形成した．レーザー照射雰囲気として，空気雰囲気とアルゴン雰囲気について検討したところ，アルゴン雰囲気のほうが安定にナノ粒子を作製できることが分かった．レーザーアブレーション法により銀ナノ粒子を作製する場合の実験条件の詳細を明らかにすることができた．","ja":"Examination of silver nanoparticle fabrication by pulsed-laser ablation of flakes in primary alcohols --- アルコール中でマイクロメートルサイズの銀フレークのナノ秒レーザーを用いたレーザーアブレーションによる銀ナノ粒子の作製を行った．アルコールの炭素鎖が短い場合，生成するナノ粒子は不安定で凝集したが，プロパノール，ブタノール，ペンタノールでは粒子サイズが小さくかつ安定にナノ粒子が形成された．また，炭素鎖がさらに長い場合はやはり凝集体を形成した．レーザー照射雰囲気として，空気雰囲気とアルゴン雰囲気について検討したところ，アルゴン雰囲気のほうが安定にナノ粒子を作製できることが分かった．レーザーアブレーション法により銀ナノ粒子を作製する場合の実験条件の詳細を明らかにすることができた．"},"authors":{"en":[{"name":"Werner, Daniel"},{"name":"Hashimoto Shuichi"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Makita, Yoji"}],"ja":[{"name":"Werner, Daniel"},{"name":"橋本 修一"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"Makita, Yoji"}]},"description":{"en":"This paper describes the formation and subsequent behavior of silver nanoparticles (NPs) observed by optical spectra, AFM (atomic force microscopy), and TEM (transmission electron microscopy) in primary alcohols by nanosecond pulsed-laser irradiation (1064 and 532 nm, typically at 1 J/(cm2 pulse)) of silver flakes. Effects of the carbon chain-length of the solvents and the irradiation atmosphere of the solutions on the Ag NP formation were investigated. The effect of alcohol chain length in aerated solutions can be described as follows: (1) in short-chain alcohols such as methanol and ethanol, the NPs are extremely unstable and easily settled down to form precipitates by centrifugation treatment; (2) very stable NPs are formed with an appreciably smaller particle size distribution in alcohols with chain lengths from C-3 to C-5 than in alcohols with longer chain length than C-5; (3) the yield of NPs are dependent on the alcohol chain length. On the other hand, the yield of NPs is greater in Ar- and N2-saturated solutions than that in aerated solutions. Besides, the yield is similar regardless of the chain length with smaller size distributions than in air-equilibrated solutions. Oxygen molecules dissolved in the solvents are responsible for these observations. The oxygen effect consists of two parts: (1) the scavenging of electrons generated by the plasma formation and thermoionic emission due to extremely high temperature under the ablation condition; (2) the formation of oxide layer on the surface of particles that hamper further growth processes to form NPs. Furthermore, we observed the formation of string segments in evacuated ethanol due to coagulation and coalescence of bare metal particles, giving rise to the splitting of the plasmon band. Thus we demonstrated that the systematic change in the solvent and irradiation atmosphere can control the particle size and size distribution. The present findings may add a new aspect to better manipulate NP fabrication based upon laser ablation method.","ja":"This paper describes the formation and subsequent behavior of silver nanoparticles (NPs) observed by optical spectra, AFM (atomic force microscopy), and TEM (transmission electron microscopy) in primary alcohols by nanosecond pulsed-laser irradiation (1064 and 532 nm, typically at 1 J/(cm2 pulse)) of silver flakes. Effects of the carbon chain-length of the solvents and the irradiation atmosphere of the solutions on the Ag NP formation were investigated. The effect of alcohol chain length in aerated solutions can be described as follows: (1) in short-chain alcohols such as methanol and ethanol, the NPs are extremely unstable and easily settled down to form precipitates by centrifugation treatment; (2) very stable NPs are formed with an appreciably smaller particle size distribution in alcohols with chain lengths from C-3 to C-5 than in alcohols with longer chain length than C-5; (3) the yield of NPs are dependent on the alcohol chain length. On the other hand, the yield of NPs is greater in Ar- and N2-saturated solutions than that in aerated solutions. Besides, the yield is similar regardless of the chain length with smaller size distributions than in air-equilibrated solutions. Oxygen molecules dissolved in the solvents are responsible for these observations. The oxygen effect consists of two parts: (1) the scavenging of electrons generated by the plasma formation and thermoionic emission due to extremely high temperature under the ablation condition; (2) the formation of oxide layer on the surface of particles that hamper further growth processes to form NPs. Furthermore, we observed the formation of string segments in evacuated ethanol due to coagulation and coalescence of bare metal particles, giving rise to the splitting of the plasmon band. Thus we demonstrated that the systematic change in the solvent and irradiation atmosphere can control the particle size and size distribution. The present findings may add a new aspect to better manipulate NP fabrication based upon laser ablation method."},"publication_date":"2008-02-07","publication_name":{"en":"The Journal of Physical Chemistry C","ja":"The Journal of Physical Chemistry C"},"volume":"Vol.112","number":"No.5","starting_page":"1321","ending_page":"1329","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1021/jp075401g"],"issn":["1932-7447"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:58, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=170669","label":"url"}],"paper_title":{"en":"Observation of laser-induced surface waves on flat silicon surface","ja":"Observation of laser-induced surface waves on flat silicon surface"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Fukumori Yasuhiro"},{"name":"Kinoshita Keita"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"富田 卓朗"},{"name":"福森 康裕"},{"name":"木下 敬太"},{"name":"松尾 繁樹"},{"name":"橋本 修一"}]},"publication_date":"2008-01-02","publication_name":{"en":"Applied Physics Letters","ja":"Applied Physics Letters"},"volume":"Vol.92","number":"No.1","starting_page":"013104-1","ending_page":"013104-3","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1063/1.2828983"],"issn":["0003-6951"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:59, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ao.osa.org/abstract.cfm?id=145136","label":"url"},{"@id":"https://www.ncbi.nlm.nih.gov/pubmed/18059666","label":"url"},{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-39049146201&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=166057","label":"url"}],"paper_title":{"en":"Applications of microlens array and photomask to the laser microfabrication of periodic photopolymer rod array","ja":"Applications of microlens array and photomask to the laser microfabrication of periodic photopolymer rod array"},"authors":{"en":[{"name":"Matsuo Shigeki"},{"name":"Miyamoto Takashi"},{"name":"Tomita Takuro"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"松尾 繁樹"},{"name":"宮本 高志"},{"name":"富田 卓朗"},{"name":"橋本 修一"}]},"description":{"en":"We report the simultaneous multipoint fabrication of polymer rods by the femtosecond laser processing of a negative photoresist using a microlens array (MLA). The rods were periodically arranged in the form of an array corresponding to the MLA and free-standing on a glass substrate. The use of a photomask enabled us to define the contour of the rod array. Furthermore, sample translation techniques were demonstrated for the effective fabrication of large-area structures.","ja":"We report the simultaneous multipoint fabrication of polymer rods by the femtosecond laser processing of a negative photoresist using a microlens array (MLA). The rods were periodically arranged in the form of an array corresponding to the MLA and free-standing on a glass substrate. The use of a photomask enabled us to define the contour of the rod array. Furthermore, sample translation techniques were demonstrated for the effective fabrication of large-area structures."},"publication_date":"2007-12-01","publication_name":{"en":"Applied Optics","ja":"Applied Optics"},"volume":"Vol.46","number":"No.34","starting_page":"8264","ending_page":"8267","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1364/AO.46.008264"],"issn":["1559-128X"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:60, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-42149144795&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=147546","label":"url"}],"paper_title":{"en":"Femtosecond Laser-Induced Ripple Structures in Semiconductor Materials","ja":"Femtosecond Laser-Induced Ripple Structures in Semiconductor Materials"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Kinoshita Keita"},{"name":"Murai Toshiaki"},{"name":"Fukumori Yasuhiro"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"富田 卓朗"},{"name":"木下 敬太"},{"name":"村井 利彰"},{"name":"福森 康裕"},{"name":"松尾 繁樹"},{"name":"橋本 修一"}]},"publication_date":"2007-06","publication_name":{"en":"Journal of Laser Micro/Nanoengineering","ja":"Journal of Laser Micro/Nanoengineering"},"volume":"Vol.2","number":"No.2","starting_page":"141","ending_page":"145","languages":["eng"],"referee":true,"identifiers":{"doi":["10.2961/jlmn.2007.02.0007"],"issn":["1880-0688"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:61, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://www.scopus.com/record/display.url?eid=2-s2.0-39049111733&origin=inward","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=147210","label":"url"}],"paper_title":{"en":"Laser Fabrication of Ship-in-a-bottle Microstructures in Sapphire","ja":"Laser Fabrication of Ship-in-a-bottle Microstructures in Sapphire"},"authors":{"en":[{"name":"Matsuo Shigeki"},{"name":"Shichijo Yoshinori"},{"name":"Tomita Takuro"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"松尾 繁樹"},{"name":"七條 義典"},{"name":"富田 卓朗"},{"name":"橋本 修一"}]},"publication_date":"2007-06","publication_name":{"en":"Journal of Laser Micro/Nanoengineering","ja":"Journal of Laser Micro/Nanoengineering"},"volume":"Vol.2","number":"No.2","starting_page":"114","ending_page":"116","languages":["eng"],"referee":true,"identifiers":{"doi":["10.2961/jlmn.2007.02.0001"],"issn":["1880-0688"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:62, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=156943","label":"url"}],"paper_title":{"en":"Effect of surface roughening on femtosecond laser-induced ripple structures","ja":"Effect of surface roughening on femtosecond laser-induced ripple structures"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Kinoshita Keita"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"富田 卓朗"},{"name":"木下 敬太"},{"name":"松尾 繁樹"},{"name":"橋本 修一"}]},"publication_date":"2007-04-12","publication_name":{"en":"Applied Physics Letters","ja":"Applied Physics Letters"},"volume":"Vol.90","number":"No.15","starting_page":"153115-1","ending_page":"153115-3","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1063/1.2720709"],"issn":["0003-6951"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:63, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=155987","label":"url"}],"paper_title":{"en":"Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy","ja":"Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy"},"authors":{"en":[{"name":"Nakashima Shin-ichi"},{"name":"Mitani Takeshi"},{"name":"Tomita Takuro"},{"name":"Kato Tomohisa"},{"name":"Nishizawa Shin-ichi"},{"name":"Okumura Hajime"},{"name":"Harima Hiroshi"}],"ja":[{"name":"中島 信一"},{"name":"三谷 武志"},{"name":"富田 卓朗"},{"name":"加藤 智久"},{"name":"西澤 伸一"},{"name":"奥村 元"},{"name":"播磨 弘"}]},"publication_date":"2007-03-23","publication_name":{"en":"Physical Review B, Condensed Matter and Materials Physics","ja":"Physical Review B, Condensed Matter and Materials Physics"},"volume":"Vol.75","number":"No.11","starting_page":"115321-1","ending_page":"115321-5","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1103/PhysRevB.75.115321"],"issn":["1550-235X"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:64, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/150000045852/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1520290883497822464/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=147601","label":"url"}],"paper_title":{"en":"Source of Surface Morphological Defects Formed on 4H-SiC Homoepitaxial Films","ja":"Source of Surface Morphological Defects Formed on 4H-SiC Homoepitaxial Films"},"authors":{"en":[{"name":"Okada Tatsuya"},{"name":"Ochi Kengo"},{"name":"Kawahara Hiroyuki"},{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Yamaguchi Makoto"},{"name":"Higashimine Kouichi"},{"name":"Kimoto Tsunenobu"}],"ja":[{"name":"岡田 達也"},{"name":"越智 謙吾"},{"name":"河原 啓之"},{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"山口 誠"},{"name":"東嶺 孝一"},{"name":"木本 恒暢"}]},"description":{"en":"Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2. From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)$angle 4ar{4}03angle$ type.","ja":"Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2. From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)$angle 4ar{4}03angle$ type."},"publication_date":"2006-10-15","publication_name":{"en":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)","ja":"Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes)"},"volume":"Vol.45","number":"No.10A","starting_page":"7625","ending_page":"7631","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.45.7625"],"issn":["0021-4922"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:65, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=147701","label":"url"}],"paper_title":{"en":"Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy","ja":"Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Matsuo Shigeki"},{"name":"Okada Tatsuya"},{"name":"Kimoto Tsunenobu"},{"name":"Mitani Takeshi"},{"name":"Nakashima Shin-ichi"}],"ja":[{"name":"富田 卓朗"},{"name":"松尾 繁樹"},{"name":"岡田 達也"},{"name":"木本 恒暢"},{"name":"三谷 武志"},{"name":"中島 信一"}]},"publication_date":"2006-10","publication_name":{"en":"Materials Science Forum","ja":"Materials Science Forum"},"volume":"Vol.527-529","starting_page":"339","ending_page":"342","languages":["eng"],"referee":true,"identifiers":{"doi":["10.4028/www.scientific.net/MSF.527-529.339"],"issn":["1662-9752"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
line:66, {"insert":{"user_id":"B000339803","type":"published_papers"},"similar_merge":{"see_also":[{"@id":"http://ci.nii.ac.jp/naid/10018158053/","label":"url"},{"@id":"https://cir.nii.ac.jp/crid/1522825130373923200/","label":"url"},{"@id":"https://web.db.tokushima-u.ac.jp/cgi-bin/edb_browse?EID=140303","label":"url"}],"paper_title":{"en":"Distinct Fine and Coarse Ripples on 4H-SiC Single Crystal Induced by Femtosecond Laser Irradiation","ja":"Distinct Fine and Coarse Ripples on 4H-SiC Single Crystal Induced by Femtosecond Laser Irradiation"},"authors":{"en":[{"name":"Tomita Takuro"},{"name":"Kinoshita Keita"},{"name":"Matsuo Shigeki"},{"name":"Hashimoto Shuichi"}],"ja":[{"name":"富田 卓朗"},{"name":"木下 敬太"},{"name":"松尾 繁樹"},{"name":"橋本 修一"}]},"description":{"en":"Upon femtosecond pulsed-laser irradiation, periodic structures referred to as ``ripples'' were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.","ja":"Upon femtosecond pulsed-laser irradiation, periodic structures referred to as ``ripples'' were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed."},"publication_date":"2006-04-14","publication_name":{"en":"Japanese Journal of Applied Physics, Part 2 (Letters)","ja":"Japanese Journal of Applied Physics, Part 2 (Letters)"},"volume":"Vol.45","number":"No.16","starting_page":"L444","ending_page":"L446","languages":["eng"],"referee":true,"identifiers":{"doi":["10.1143/JJAP.45.L444"]},"published_paper_type":"scientific_journal"},"priority":"input_data"}
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