Search: |
Tokushima University ⟩ Faculty of Science and Technology ⟩ Department of Science and Technology ⟩ Electrical and Electronic Engineering ⟩ | ||
Material Science and Device |
A | |
AlN | Nishino, Katsushi |
BCDE | |
F | |
femtosecond laser processing/modification | Tomita, Takuro |
G | |
graphene | Nagase, Masao |
HIJK | |
L | |
laser diode | Nagamatsu, Kentaro |
LED | Kawakami, Retsuo |
light emitting diode | Nagamatsu, Kentaro |
M | |
N | |
nanometrology | Nagase, Masao |
nanostructure | Nagase, Masao / Takashima, Yuusuke |
nitride semiconductor | Nagamatsu, Kentaro |
O | |
optical device | Naoi, Yoshiki / Takashima, Yuusuke |
optical properties of solid | Tomita, Takuro |
P | |
photonic device (→ optical device) | |
process | Nagamatsu, Kentaro |
QR | |
S | |
semiconductor | Kawakami, Retsuo |
semiconductor device | Nagase, Masao |
silicon | Nagase, Masao |
T | |
transistor | Nagamatsu, Kentaro |
UVWXYZ |