| Search: |
| Tokushima University ⟩ Faculty of Science and Technology ⟩ Department of Science and Technology ⟩ Electrical and Electronic Engineering ⟩ | ||
Material Science and Device |
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| A | |
| AlN | Nishino, Katsushi |
| BCDE | |
| F | |
| femtosecond laser processing/modification | Tomita, Takuro |
| G | |
| graphene | Nagase, Masao |
| HIJK | |
| L | |
| laser diode | Nagamatsu, Kentaro |
| LED | Kawakami, Retsuo |
| light emitting diode | Nagamatsu, Kentaro |
| M | |
| N | |
| nanometrology | Nagase, Masao |
| nanostructure | Nagase, Masao / Takashima, Yuusuke |
| nitride semiconductor | Nagamatsu, Kentaro |
| O | |
| optical device | Naoi, Yoshiki / Takashima, Yuusuke |
| optical properties of solid | Tomita, Takuro |
| P | |
| photonic device (→ optical device) | |
| process | Nagamatsu, Kentaro |
| QR | |
| S | |
| semiconductor | Kawakami, Retsuo |
| semiconductor device | Nagase, Masao |
| silicon | Nagase, Masao |
| T | |
| transistor | Nagamatsu, Kentaro |
| UVWXYZ | |