Tokushima University / Educator and Researcher Directory --- Kusaka, Kazuya

Personal Web Page

http://www.me.tokushima-u.ac.jp/xray/member/kusa/kusaka.htm

https://researchmap.jp/read0184044 (researchmap)

Field of Study

○	X-ray Stress Measurement

Subject of Study

○	Residual stress measurement in nitride semiconductor films by using X-ray diffraction (residual stress, X-ray diffraction, sputtering, nitride semiconductor films) (高い音響速度と圧電特性に優れるため弾性表面波素子や高周波フィルターへの適用が期待されるAlN，青色発光ダイオードで知られるGaNなどのIII-V族半導体薄膜をスパッタリング法により廉価なガラス基板上へ堆積させる．得られた膜の特性評価として主にX線回折を用いて非破壊的に残留応力を調べている．そして，残留応力の発生機構を解明し，良質な膜を得るための最適な堆積条件を見つけることを目標としている．)

Book / Paper

Academic Paper (Judged Full Paper):

1.	Kazuya Kusaka, Kenta Shirasaka, Daisuke Yonekura and Yuta Tanaka : Residual stress measurement of {112}-oriented CrN layers in CrN/Cr multilayer films, Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B, Vol.37, 062919-1-062919-6, 2019. (Tokushima University Institutional Repository) ● Metadata: 114030 (Link to Publication Site) ● Publication site (DOI): 10.1116/1.5118682 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1116/1.5118682 (Tokushima University Institutional Repository: 114030, DOI: 10.1116/1.5118682)
2.	Kazuya Kusaka, Kenta Shirasaka, Daisuke Yonekura and Yuta Tanaka : Measurement of the residual stress in chromium nitride coatings deposited on an aluminum alloy substrate using arc ion plating method, Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B, Vol.37, 062916-1-062916-5, 2019. (Tokushima University Institutional Repository) ● Metadata: 114029 (Link to Publication Site) ● Publication site (DOI): 10.1116/1.5118702 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1116/1.5118702 (Tokushima University Institutional Repository: 114029, DOI: 10.1116/1.5118702)
3.	Kazuya Kusaka, Yutaka Maruoka and Tatsuya Matsue : Residual stress and bending strength of ZnO films deposited on polyimide sheet by RF sputtering system, Journal of Vacuum Science & Technology A, Vol.34, No.3, 031507-1-031507-4, 2016. (Keyword) Zinc oxide films / Sputter deposition / Bending (Tokushima University Institutional Repository) ● Metadata: 118081 (Link to Publication Site) ● Publication site (DOI): 10.1116/1.4944610 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1116/1.4944610 (Tokushima University Institutional Repository: 118081, DOI: 10.1116/1.4944610)
4.	Ming Cai, Hitoshi Takagi, Antonio Norio Nakagaito, Kazuya Kusaka, Masahiro Katoh and Yan Li : Influence of alkali concentration on morphology and tensile properties of abaca fibers, Advanced Materials Research, Vol.1110, 302-305, 2015. (Link to Publication Site) ● Publication site (DOI): 10.4028/www.scientific.net/AMR.1110.302 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.4028/www.scientific.net/AMR.1110.302 (DOI: 10.4028/www.scientific.net/AMR.1110.302)
5.	Kazuya Kusaka and Yuma Yamada : The Relationship between Hillock Formation Temperature and Initial Residual Stress in Copper Thin Films with Different Crystal Grain Size, Journal of the Society of Materials Science, Japan, Vol.62, No.7, 457-463, 2013. (Summary) We deposited copper films which have a different grain size on the silicon single crystal wafer with dc magnetron sputtering. The crystal grain size of the copper films was varied by changing the substrate temperature Ts, which is one of the sputtering deposition conditions, between 64°C and 200°C. The obtained copper films were set on an optical microscope equipped with a vacuum heating device. The films surface were observed with the microscope throughout the thermal cycling between room temperature to 800°C. Next, we examined the temperature which hillocks begin to form. As a result, we confirmed the clear relationship between the temperature which the hillocks begin to form and the initial grain size of the copper film. In the case of low substrate temperature of Ts = 64°C, the initial grain size of copper film was very small, and many hillocks were formed at low heating temperature of 300°C. On the other hand, in the case of high substrate temperature of Ts = 200°C, the initial grain size of copper film was large, and hillocks were not formed below heating temperature of 800°C. (Keyword) Copper film / Hillock formation / In-situ observation / Residual stress / Thermal stress (Link to Publication Site) ● Publication site (DOI): 10.2472/jsms.62.457 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282680421464576 ● Search Scopus @ Elsevier (DOI): 10.2472/jsms.62.457 (DOI: 10.2472/jsms.62.457, CiNii: 1390282680421464576)
6.	Manabu Yasuoka, Pangpang Wang, Kaiyue Zhang, Zhiyong Qiu, Kazuya Kusaka, Young-Shik Pyoun and Ri-ichi Murakami : Improvement of the fatigue strength of SUS304 austenite stainless steel using ultrasonic nanocrystal surface modification, Surface & Coatings Technology, Vol.218, 93-98, 2013. (Summary) An ultrasonic nanocrystal surfacemodi cation (UNSM) treatmentwas applied to improve the fatigue strength of typical SUS304 austenite stainless steel. A gradient nanocrystalline plastic deformation layer with increased hardness was created at the specimen surface after UNSM treatment. The average grain size at the top surface was re ned to a few nanometers, and the whole thickness of the plastic deformation layer was ~30 to 200 μm, depending on the various treatment conditions. The hardened surface layer was assumed to be the main reason for the improvement in the fatigue strength. The increase in the fatigue strengthwas related to theUNSMapplied static loads. In this work, it was found that a static load of 90 N was optimum to obtain a large cycle fatigue strength limit. Plastic deformation (strain)-induced martensitic transformations were also observed in the surface layer. The mechanism for further grain re nement based on martensitic transformations is discussed. (Keyword) Ultrasonic nanocrystal surface modi cation / Surface mechanical attrition treatment / Martensitic transformation / Grain re nement (Link to Publication Site) ● Publication site (DOI): 10.1016/j.surfcoat.2012.12.033 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84878832113 (DOI: 10.1016/j.surfcoat.2012.12.033, Elsevier: Scopus)
7.	Mitsuhiko Shinohara, Takao Hanabusa and Kazuya Kusaka : Residual Stress Development in Cu Thin Films with and without AlN Passivation by Cyclic Plane Bending, International Journal of Modern Physics B, Vol.24, No.15,16, 2530-2536, 2010. (Link to Publication Site) ● Publication site (DOI): 10.1142/S0217979210065210 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1142/S0217979210065210 (DOI: 10.1142/S0217979210065210)
8.	Ayumi Shiro, Takao Hanabusa, Tatsuya Okada, Masayuki Nishida, Kazuya Kusaka and Osami Sakata : Measurement of Micro Residual Stresses near the Grain Boundary in Copper Bicrystal, Advanced Materials Research, Vol.89-91, 515-520, 2010. (Link to Publication Site) ● Publication site (DOI): 10.4028/www.scientific.net/AMR.89-91.515 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.4028/www.scientific.net/AMR.89-91.515 (DOI: 10.4028/www.scientific.net/AMR.89-91.515)
9.	Kikuo Tominaga, Kenji Okada, Yoshinori Miyamoto, Shinya Ohkura, Kazuya Kusaka, Kentaro Shiraishi, Takahiro Ueno and Takao Hanabusa : Deposition of photocatalytic TiO2 films by planar magnetron sputtering system with opposed Ti targets, e-Journal of Surface Science and Nanotechnology, Vol.7, 290-293, 2009. (Link to Publication Site) ● Publication site (DOI): 10.1380/ejssnt.2009.290 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-68249117960 (DOI: 10.1380/ejssnt.2009.290, Elsevier: Scopus)
10.	Kazuya Kusaka, Takao Hanabusa, Shoso Shingubara, Tatsuya Matsue and Osami Sakata : Measurement of electromigration-induced stress in aluminum alloy interconnection, Vacuum, Vol.83, No.3, 637-640, 2009. (Keyword) Aluminum alloy interconnection / Electromigration / Stress / Synchrotron radiation / Current density (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2008.04.041 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.vacuum.2008.04.041 (DOI: 10.1016/j.vacuum.2008.04.041)
11.	Tatsuya Matsue, Takao Hanabusa, Kazuya Kusaka and Osami Sakata : Effect of heating on the residual stresses in TiN films investigated using synchrotron radiation, Vacuum, Vol.83, No.3, 585-588, 2009. (Keyword) TiN film / Arc ion plating / Residual stress / Surface morphology / Synchrotron radiation (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2008.04.068 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.vacuum.2008.04.068 (DOI: 10.1016/j.vacuum.2008.04.068)
12.	Kazuya Kusaka, Takao Hanabusa, Kenta Kaneko, Tatsuya Matsue and Osami Sakata : In-situ Thermal Stress Measurement in Multi-layered Aluminum Nitride and Copper Films by Synchrotron Radiation, Transactions of The Japan Society of Mechanical Engineers, Series A, Vol.74, No.739, 363-369, 2008. (Summary) The Specimen prepared in this study was multi-later aluminum nitride and copper films deposited on thermal oxidation silicon by dc sputtering. Thermal stresses in the copper layers were investigated by ultra high X-rays of synchrotron radiation in the heating and cooling process. It found from the sin^2 φ diagrams of the multi-layered film that the copper layers consisted of crystal grains which had two different orientations. One was randomly orientation, and the other was {111} orientation. The FWHM of the diffraction from the {111}-oriented crystal grains was constant regardless of heating temperature. On the other hand, the FWHM of the diffraction from the randomly-oriented crystal grains was decreased with increasing heating temperature at 1st heating cycle and it became constant regardless of heating temperature after the 1st heating cycle. The 2ϑ-sin^2 φ diagrams of the multi-layered film for the stress measurement showed non-linear. We could obtain thermal stresses in two different orientation crystal grains from the non-linear 2ϑ-sin^2 φ diagram at the same time. For both crystal grains, the thermal stress differences between the 1st heating and the 1st cooling cycles were shown as a hysteresis loop. In the case of the 2nd thermal cycles, the thermal stresses changed linearly for both crystal grains. For the 1st heating cycle, the compressive thermal stress in the {111}-oriented crystal grains was larger than that in the randomly-oriented one. (Keyword) Thermal Stress / In-situ Measurement / Multi-layer Film / Cu Thin Film / Synchrotron Radiation (Link to Publication Site) ● Publication site (DOI): 10.1299/kikaia.74.363 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390001204479313408 ● Summary page in Scopus @ Elsevier: 2-s2.0-44949216727 (DOI: 10.1299/kikaia.74.363, CiNii: 1390001204479313408, Elsevier: Scopus)
13.	Takao Hanabusa, Kazuya Kusaka, Kenta Kaneko, Osami Sakata and Masayuki Nishida : Stress-assisted atomic migration in thin copper films, Key Engineering Materials, Vol.353-358, 671-674, 2007. (Link to Publication Site) ● Publication site (DOI): 10.4028/www.scientific.net/KEM.353-358.671 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-36048980701 (DOI: 10.4028/www.scientific.net/KEM.353-358.671, Elsevier: Scopus)
14.	Tatsuya Matsue, Takao Hanabusa, Yasukazu Ikeuchi, Kazuya Kusaka and Osami Sakata : Alteration of internal stresses in SiO₂/Cu/TiN thin films by X-ray and synchrotron radiation due to heat treatment, Vacuum, Vol.80, No.7, 836-839, 2006. (Keyword) Multi layers film / residual stress / crystal structure / Surface morphology / X-ray diffraction / synchrotron radiation (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2005.11.033 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-33646553916 (DOI: 10.1016/j.vacuum.2005.11.033, Elsevier: Scopus)
15.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : Thermal stress behavior in nano-size thin aluminum films, International Journal of Modern Physics B, Vol.20, No.25n27, 4691-4696, 2006. (Keyword) Thin film / Nano-size / Thermal stress / Synchrotron radiation / in-situ observation (Link to Publication Site) ● Publication site (DOI): 10.1142/S0217979206041902 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-33751296553 (DOI: 10.1142/S0217979206041902, Elsevier: Scopus)
16.	Kazuya Kusaka, Takeshi Tanaka and Takao Hanabusa : Effect of Laser Power Density and Scanning Speed on Residual Stress in Laser-Peened Aluminum Alloy, Journal of the Society of Materials Science, Japan, Vol.54, No.7, 672-678, 2005. (Summary) Laser peening has recently been developed as a surface modification technique. When a high-energy laser pulse irradiates a material surface submerged in water, high-pressure plasma is generated immediately on the surface. The plasma induces an impulse wave that penetrates into the surface layer. In the present study, a laser beam of diameter about 10mm is converged by the converging lens with focal length of 250mm, and irradiates the aluminum surface. The second harmonic generation of Yttrium-Aluminum-Garnet (YAG) laser was used at a pulse frequency of 10 Hz. The effect of laser power density and scanning speed on residual stress in the laser peened aluminum alloy surface was investigated by X-ray diffraction. The following results were obtained : (1) compressive residual stress was induced in the surface of all samples ; (2) many fused traces and many micro-cracks were formed in laser peened aluminum surface ; (3) for the series of experiments with the fixed scanning speed of 2.0mm/s, the maximum compressive residual stress was induced at the laser power density of 31MW/mm^2; and (4) for the fixed laser power density of 61 MW/mm^2, that was induced at scanning speed of 1.0mm/s. (Keyword) Laser peening / Surface modification / Plus laser / Residual stress / X-ray diffraction / Laser power density / Scanning speed (Link to Publication Site) ● Publication site (DOI): 10.2472/jsms.54.672 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390001205418449792 ● Search Scopus @ Elsevier (DOI): 10.2472/jsms.54.672 (DOI: 10.2472/jsms.54.672, CiNii: 1390001205418449792)
17.	Satoshi Kiriyama, Kazuya Kusaka and Takao Hanabusa : 動き始めた創成学習, 大学研究ジャーナル, 95-106, 2005. (Keyword) 創成学習 / 創成学習開発センター / 自主創造学習
18.	Mitsuhiko Hataya, Takao Hanabusa, Kazuya Kusaka, Kikuo Tominaga and Tatsuya Matsue : Residual stress measurement in sputtered copper thin films by synchrotron radiation and ordinary X-rays, Materials Science Forum, Vol.490-491, 661-668, 2005. (Link to Publication Site) ● Publication site (DOI): 10.4028/www.scientific.net/MSF.490-491.661 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-35148886696 (DOI: 10.4028/www.scientific.net/MSF.490-491.661, Elsevier: Scopus)
19.	Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga and Noriyoshi Yamauchi : Effect of substrate temperature on crystal orientation and residual stress in RF sputtered galium nitride films, Materials Science Forum, Vol.490-491, 613-618, 2005. (Link to Publication Site) ● Publication site (DOI): 10.4028/www.scientific.net/MSF.490-491.613 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-35148813506 (DOI: 10.4028/www.scientific.net/MSF.490-491.613, Elsevier: Scopus)
20.	Takao Hanabusa, Kazuya Kusaka, Shozo Shingubara and Osami Sakata : In-situ observation of thermal stress in nano-size thin aluminum films, Materials Science Forum, Vol.490-491, 577-582, 2005. (Link to Publication Site) ● Publication site (DOI): 10.4028/www.scientific.net/MSF.490-491.577 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-35148837115 (DOI: 10.4028/www.scientific.net/MSF.490-491.577, Elsevier: Scopus)
21.	Takao Hanabusa, Kazuhiro Miyagi and Kazuya Kusaka : X-ray elastic constants of chromium nitride films deposited by arc-ion plating, Journal of Vacuum Science & Technology A, Vol.A22, No.4, 1785-1787, 2004. (Summary) 本論文は，アークイオンプレーティング法により成膜したCrN膜のX線的弾性定数を実験的に求めたものである．X線応力測定では，特定の回折線のひずみを測定し弾性論に基づき応力を計算するものであるから，用いる回折面に特有な弾性定数を測定によってあらかじめ求めておく必要がある．試料はステンレス鋼基板上に窒素ガス圧2.63Pa，基板温度573K，アーク電流100Aバイアス電圧-300∼-100Vで蒸着したCrN膜である．膜の配向特性は{110}であり，弾性定数の測定には220回折面を用いた．X線的弾性定数は，バイアス電圧による依存はなく，約260GPaであった． (Link to Publication Site) ● Publication site (DOI): 10.1116/1.1705648 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1116/1.1705648 (DOI: 10.1116/1.1705648)
22.	Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga and Noriyoshi Yamauchi : Effect of Substrate Temperature on Crystal Orientation and Residual Stress in Radio Frequency Sputtered Gallium-Nitride Films, Journal of Vacuum Science & Technology A, Vol.22, No.4, 1587-1590, 2004. (Summary) The crystal orientation and residual stress in gallium nitride (GaN) films deposited on a single-crystal (0001) sapphire substrate using a sputtering system are examined through x-ray diffraction measurements as part of a study of low-temperature sputtering techniques for GaN. The rf sputtering system has an isolated deposition chamber to prevent contamination with impurities, and is expected to produce high-purity nitride films. GaN films are deposited at various substrate temperatures and constant gas pressure and input power. This system is found to produce GaN films with good crystal orientation, with the c axes of GaN crystals oriented normal to the substrate surface. The crystal size of films deposited at high temperature is larger than that deposited at low T_S. All films except that deposited at 973 K exhibit compressive residual stress, and this residual stress is found to decrease with increasing temperature. Finally, the film deposited at 973 K was tinged with white, and the surface contained numerous microcracks. (Link to Publication Site) ● Publication site (DOI): 10.1116/1.1759348 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1116/1.1759348 (DOI: 10.1116/1.1759348)
23.	Akira Oyama, Hitoshi Takagi, Kazuya Kusaka and Keitaro Horikawa : The Content and Effects of Machine Creation Laboratory Using Lego Mindstorms, Journal of Japanese Society for Engineering Education, Vol.52, No.4, 20-24, 2004. (Summary) A machine creation laboratory has been performed with creating robots which are called the autonomous robots. This paper describes specific examples of the laboratory which was held by using Lego Mindstorms, and then introduces the outcome of educative effects in engineering education. The purpose of this laboratory is not only the improvement of problem-creation and problem-solving ability but also that of the group activities, the writing reports and the presentations. For example, students experienced that they could create ideas for resolving problems by themselves, discuss the robot mechanism in a group through the laboratory. It can be seen that the use of these robots for engineering education is considerably effective. (Keyword) Education Engineering / Lego Mindstorms / Autonomous Robot / Educative Effect (Link to Publication Site) ● Publication site (DOI): 10.4307/jsee.52.4_20 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282679471098496 ● Search Scopus @ Elsevier (DOI): 10.4307/jsee.52.4_20 (DOI: 10.4307/jsee.52.4_20, CiNii: 1390282679471098496)
24.	Takao Hanabusa, Kazuya Kusaka, Tatsuya Matsue, Masayuki Nishida, Osami Sakata and Toshiki Sato : Evaluation of Internal Stresses in Single-, Double- and Multi-Layered TiN and TiAlN Thin Films by Synchrotron Radiation, JSME International Journal, Series A: Solid Mechanics and Material Engineering, Vol.47, No.3, 312-317, 2004. (Summary) Residual stresses in TiN and TiAlN films on steel substrate were investigated by ultra high X-rays of synchrotron radiation. The specimens prepared in this study were single-, double- and multi-layer TiN and TiAlN films deposited on high speed steel substrate by arc-ion plating. The minimum thickness available for the residual stress measurement was 0.8 μm by in-lab equipment whereas below 0.1 μm by synchrotron radiation. Extremely large compressive residual stresses were found in the films. Residual stresses in TiAlN films were more than twice larger than those in TiN films, resulting to reduce the average residual stress in the whole film system by making double- or multi-layer film construction comparing to that in the single TiAlN film. (Keyword) Thin Film / TiN / TiAlN / Residual Stress / Synchrotron Radiation / X-ray Diffraction / Multi-Layer Structure (Link to Publication Site) ● Publication site (DOI): 10.1299/jsmea.47.312 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282681469252480 ● Search Scopus @ Elsevier (DOI): 10.1299/jsmea.47.312 (DOI: 10.1299/jsmea.47.312, CiNii: 1390282681469252480)
25.	Takao Hanabusa, Kazuya Kusaka and Osami Sakata : Residual stress and thermal stress observation in thin copper films, Thin Solid Films, Vol.459, No.1-2, 245-248, 2004. (Summary) Internal stresses in thin copper films with or without passivation were investigated by the diffraction method using an in-lab X-ray apparatus and a synchrotron radiation system. The in-lab X-ray stress equipment primarily measures the stresses m films thicker than 100 nm, whereas the synchrotron radiation system can measure stresses in films as thin as 8 nm. The residual stresses in the copper films were tensile in all cases. Thermal stress development was investigated in the heating and cooling processes. In the case of thick films, the internal stress decreased to the compressive side in an early stage of the heating process followed by non-linear behavior. In the cooling stage, the stresses in the film changed to tensile and increased to the final state at room temperature. The stress difference between the heating and cooling cycle was shown as a hysteresis loop in thick films. A thin film exhibits neither hysteresis loop nor a non-linear relation in a thermal stress change during a thermal cycle. (Keyword) Cu film / thin film / residual stress / Thermal stress / In-situ measurement / X-ray stress measurement / Synchrotron radiation (Link to Publication Site) ● Publication site (DOI): 10.1016/j.tsf.2003.12.102 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-2942585285 (DOI: 10.1016/j.tsf.2003.12.102, Elsevier: Scopus)
26.	Takao Hanabusa, Kazuya Kusaka, Tatsuya Matsue, Masayuki Nishida, Osami Sakata and Toshiki Sato : Evaluation of internal stresses in TiN thin films by synchrotron radiation, Vacuum, Vol.74, No.3-4, 571-575, 2004. (Summary) Residual stresses in TiN films on a steel substrate were investigated with ordinary in-lab X-ray equipment and a synchrotron radiation device that emits ultra-high-intensity X-rays. Specimens prepared in this study were TiN films with different thicknesses deposited on a stainless-steel substrate by arc-ion plating. The minimum thickness that allows the residual stress measurement was 0.8 μm by in-lab equipment, but it was below 0.1 μm by synchrotron radiation. We found extremely large compressive residual stresses even in a 0.1-μm-thick film; the level of residual stress was almost constant for the films with thickness of 0.1 to 0.8 μm. (Keyword) Thin film / Internal stress / Synchrotron radiation / Titanium nitride / Arc-ion plating (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2004.01.029 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.vacuum.2004.01.029 (DOI: 10.1016/j.vacuum.2004.01.029)
27.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Measurement of crystal orientation and residual stress in GaN film deposited by RF sputtering with powder target, Vacuum, Vol.74, No.3-4, 613-618, 2004. (Summary) Crystal orientation and residual stress in GaN films deposited by radio frequency sputtering with gallium nitride powder target are investigated by X-ray diffraction as functions of nitrogen concentration (C_N2) in the atmosphere gas consisting of argon and nitrogen. In addition, the film surfaces are observed by atomic force microscopy. The following results are obtained: (1) GaN films deposited by sputtering with the powder target attained good crystal orientation, with the c-axis oriented normal to the substrate surface; (2) film thickness decreased with increasing nitrogen concentration (C_N2); (3) the film deposited at C_N2=20% had the largest crystal grain size, and the film deposited at C_N2=0% had the smallest; (4) the film deposited at C_N2=20% had the best c-axis orientation, and that deposited at C_N2=0% had the poorest; (5) tensile residual stress occurred in films deposited at C_N2≦20%, and compressive residual stress over -1 GPa occurred in films deposited at C_N2≧50%. (Keyword) Gallium nitride / RF sputtering / Powder target / Crystal orientation / Residual stress (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2004.01.034 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.vacuum.2004.01.034 (DOI: 10.1016/j.vacuum.2004.01.034)
28.	Takao Hanabusa and Kazuya Kusaka : Presentation Assessment of Activities in Graduation Research and Its Development, Journal of Japanese Society for Engineering Education, Vol.51, No.5, 42-50, 2003. (Summary) Graduation research is a comprehensive activity among several design subjects composed in a four-year undergraduate course. The design subject in a curriculum demand several abilities such as (1) collection and application of information, (2) creativity, (3) problem finding, (4) group activities and (5) presentation. These abilities can be assessed and promoted by practicing presentations. This paper deals with the way of presentation assessment in the activities of graduation research and its development through 2000, 2001 and 2002 academic years. A coalition consisting of five seminar groups began to develop the presentation assessment. This assessment was then extended to the whole engineering departments in Tokushima University. It was clarified that the presentation assessment in activities of graduation work is an effective method to promote presentation ability and self-studying skill of the student. (Keyword) プレゼンテーション評価 / 卒業研究 / 創成科目 / 評価方法 (Link to Publication Site) ● Publication site (DOI): 10.4307/jsee.51.5_42 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390001204494125440 ● Search Scopus @ Elsevier (DOI): 10.4307/jsee.51.5_42 (DOI: 10.4307/jsee.51.5_42, CiNii: 1390001204494125440)
29.	Tatsuya Matsue, Takao Hanabusa, Yasukazu Ikeuchi and Kazuya Kusaka : X-Ray Evaluation of SiO2/Cu/TiN Films Deposited by Ion Plating, Journal of the Society of Materials Science, Japan, Vol.52, No.10, 1231-1236, 2003. (Summary) ガラス基板上に2層および3層に積層した膜の残留応力をX線的に評価した研究である．基板上にまずTiN膜をイオンプレーティング法により蒸着し，その上にCu膜およびSiO2膜をコーティングした．積層膜の結晶構造を原子間力顕微鏡により，また，残留応力をX線法で測定した． SiO2膜はアモルファスであり，TiNおよびCu膜は双方とも{111}配向の結晶構造を有していた．TiN および Cu膜について2点法により残留応力を測定した．Cu膜の残留応力はほぼ200MPaの引張り応力であり，アンダーコートのTiN膜の厚さとともに増大した．TiN 膜の応力は約300MPaの引張りであった． (Link to Publication Site) ● Publication site (DOI): 10.2472/jsms.52.1231 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0346329967 (DOI: 10.2472/jsms.52.1231, Elsevier: Scopus)
30.	Takao Hanabusa, Kazuya Kusaka, Masayuki Nishida, Tatsuya Matsue and Osami Sakata : Crystal orientation and residual stress in TiN film by synchrotron radiation, Zeitschrift für Metallkunde, Vol.94, No.6, 662-666, 2003. (Summary) The residual stresses in a TiN film, the thickness of which is less than 1μm, deposited by arc ion plating was measured using the Spring-8 synchrotron radiation facility installed at Japan Synchrotron Radiation Research Institute (JASRI). Films thicker than 300 nm have a {111} texture, whereas those with a thickness of 100 nm have a relatively random orientation. Instead of the conventional laboratory X-ray equipment, ultra-bright synchrotron radiation can be used to precisely measure the residual stress in thin films with a thickness of 100 to 800 nm. The residual stress in thicker TiN films is about 7 GPa in compression and it is not affected by the film thickness. The slightly small compressive stress in a film of 100 nm in thickness may be due to the different crystal orientation in the film. (Keyword) thin film / residual stress / texture / synchrotron radiation (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0742278134 (Elsevier: Scopus)
31.	Kazuya Kusaka, Kouhei Furutani, Takuya Kikuma, Takao Hanabusa and Kikuo Tominaga : Effect of Plasma Protection Net on Crystal Orientation and Residual Stress in Sputtered Gallium Nitride Films, Materials Science Research International, Vol.8, No.4, 187-192, 2002. (Summary) X-ray diffraction was carried out in order to investigate crystal orientation and residual stress in gallium nitride (GaN) films deposited on a fused quartz substrate by radio frequency (RF) planar magnetron sputtering with a net to protect against plasma exposure. GaN films were deposited at constant gas pressure, constant input power, and various substrate temperatures. The following results were obtained: (1) GaN film of good crystal orientation can be deposited by RF sputtering; (2) in all films deposited at high substrate temperature, the c-axes of GaN crystals were oriented normal to the substrate surface; (3) crystal orientation was good in films deposited at high substrate temperature Ts > 573 K, but film deposited at Ts = 873 K peeled from the substrate; (4) good crystal orientation was attained in films deposited by sputtering with the fine mesh to protect against plasma exposure; (5) compressive residual stress was found in film deposited at low Ts below 573 K; (6) compressive residual stress was found in films deposited by RF sputtering with the plasma protection net. (Keyword) Gallium nitride film / Radio frequency sputtering / Residual stress / Crystal orientation / Plasma protection net / X-ray diffraction (Link to Publication Site) ● Publication site (DOI): 10.2472/jsms.51.12Appendix_187 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390001205443968512 ● Summary page in Scopus @ Elsevier: 2-s2.0-0037004116 (DOI: 10.2472/jsms.51.12Appendix_187, CiNii: 1390001205443968512, Elsevier: Scopus)
32.	Takao Hanabusa and Kazuya Kusaka : A new trial of outcomes assesment based on presentation practice, Journal of Japanese Society for Engineering Education, Vol.50, No.5, 47-53, 2002. (Summary) Outcomes assessment based on presentation practice is newly schemed out in this paper. In this assessment, not only teachers but students contribute to the evaluation of a few items concerning both the substance and the skill of presentation. Practicing the presentation assessment steadily enhanced the ability of students' presentation and their ability of assessment. This paper introduces examples of the results taken from the design courses of ``Practice of Elementary Creation'', ``Creation Laboratory'' and ``Graduation Thesis''. (Keyword) Engineering education / Students / Outcomes assessment / Design course (Link to Publication Site) ● Publication site (DOI): 10.4307/jsee.50.5_47 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390001204494433792 ● Search Scopus @ Elsevier (DOI): 10.4307/jsee.50.5_47 (DOI: 10.4307/jsee.50.5_47, CiNii: 1390001204494433792)
33.	Kazuya Kusaka, Daisuke Taniguchi, Takao Hanabusa and Kikuo Tominaga : Effect of sputtering gas pressure and nitrogen concentration on crystal orientation and residual stress in sputtered AlN films, Vacuum, Vol.66, No.3-4, 441-446, 2002. (Summary) The crystal orientation and residual stress in sputtered AlN films were investigated by X-ray diffraction. The AlN films were deposited on a glass substrate by direct current (DC) and radio frequency (RF) planar magnetron sputtering system at mixed gas of argon and nitrogen under various sputtering gas pressures (P) and nitrogen concentrations (C_N). The following results were obtained: (1) the degree of the c-axis orientation of AlN films deposited by RF sputtering was superior to those produced by DC sputtering; (2) the degree of the c-axis orientation of AlN films was improved with decreasing P and increasing C_N; (3) in-plane large compressive stress was obtained at low P, and in-plane tensile stress was obtained at high P (P>1.3 Pa); (4) film produced by DC sputtering at low P (P<1 Pa) extensively included micro-cracks; and (5) in-plane tensile stress was obtained at low C_N and large compressive stress was obtained at C_N (C_N>40%). (Link to Publication Site) ● Publication site (DOI): 10.1016/S0042-207X(02)00168-9 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0037136161 (DOI: 10.1016/S0042-207X(02)00168-9, Elsevier: Scopus)
34.	Takuya Kikuma, Kikuo Tominaga, Kazuo Furutani, Kazuya Kusaka, Takao Hanabusa and Takashi Mukai : GaN films deposited by planar magnetron sputtering, Vacuum, Vol.66, No.3-4, 233-237, 2002. (Summary) The crystal orientation of GaN films deposited on fused quartz substrates by rf planar magnetron sputtering using a mesh to guard against plasma exposure was investigated by X-ray diffraction. Sample films were deposited at constant N₂ gas pressure and input power at a range of substrate temperatures between 84℃ and 600℃. It was found that GaN films with good crystal orientation can be produced by rf sputtering with the c-axis of GaN crystals oriented normal to the substrate surface in almost all films produced. The crystal 00·2 orientation was good at substrate temperatures exceeding 300℃, however, films deposited at 600℃ peeled from the substrate. The fine mesh installed to protect the film from exposure to plasma was found to be very useful for depositing films with a good crystal orientation of 00·2, and the best crystal orientation was realized for a film deposited by sputtering with a target to mesh separation of 30 mm. (Keyword) sputtered GaN film / sputtering / DIMETHYLHYDRAZINE / HETEROSTRUCTURE / DIODES (Link to Publication Site) ● Publication site (DOI): 10.1016/S0042-207X(02)00147-1 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/S0042-207X(02)00147-1 (DOI: 10.1016/S0042-207X(02)00147-1)
35.	Kikuo Tominaga, Takuya Kikuma, Kazuya Kusaka and Takao Hanabusa : Energetic oxygen ions in ZrO₂ deposition by reactive sputtering of Zr, Vacuum, Vol.66, No.3-4, 279-284, 2002. (Summary) The generation of intense flux of energetic oxygen ions in the sputtering of Zr target in Ar+O₂ atmosphere is investigated. The energetic negative oxygen ions were detected using a constructed probe. The photoemission intensity of sputtered Zr atoms was observed in order to monitor the surface oxidization of the Zr target. The results indicate that the surface of the Zr target undergoes rapid oxidization during sputtering. The generation of the intense flux of energetic negative oxygen ions is considered to occur as a result of sputtering the heavily oxidized Zr target. (Keyword) energetic oxygen / Zr-oxides / film degradation (Link to Publication Site) ● Publication site (DOI): 10.1016/S0042-207X(02)00155-0 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/S0042-207X(02)00155-0 (DOI: 10.1016/S0042-207X(02)00155-0)
36.	Kazuya Kusaka, Hiroyuki Ukida and Shigeki Matsuo : Evaluation of Technique to Improve Pre-Design Ability and Presentation Skills, Journal of Japanese Society for Engineering Education, Vol.50, No.3, 98-103, 2002. (Summary) This paper repots on a technique for improving presentation skills during the education of the pre-design process to first year students. Each student was asked to investigate roots of interesting invention in mechanical engineering in a group with two other students. Each student was able to learn the process of invention and design through this investigation. It was expected that use of this technique would improve the pre-design, team working, report writing and presentation skills of each student. The results showed that presentation skills were significantly improved by the introduction of the new evaluation method. (Keyword) Engineering Education / Student / Practice / Pre-Design Process / Presentation Skills / Evaluation Technique (Link to Publication Site) ● Publication site (DOI): 10.4307/jsee.50.3_98 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282679469482624 ● Search Scopus @ Elsevier (DOI): 10.4307/jsee.50.3_98 (DOI: 10.4307/jsee.50.3_98, CiNii: 1390282679469482624)
37.	Takao Hanabusa, 森口忠和, Kazuya Kusaka and Tatsuya Matsue : Development of Thick TiN Film on Aluminum Substrate and Its Wear Properties, Journal of the Society of Materials Science, Japan, Vol.50, No.7, 732-737, 2001. (Summary) In the industrial fields, aluminum (A1050) and aluminum alloys (A5052 and A2017) are widely used in mechanical components. However, their application is essentially restricted because of their low strength and low hardness. In the present study, TiN film deposition was tried on a surface of aluminum and aluminum alloy substrates by means of an arc ion plating. The aim is to develop thick TiN film on aluminum based materials in order to get strong wear resistance. In order to minimize an increase of the substrate temperature throughout the deposition, the process was planned to deposit TiN intermittently with cooling intervals of 120 min. Arc current, bias voltage and coating time were changed to examine their roles on hardness and wear property of TiN films. X-ray diffraction study revealed (100) preferred orientation in the film deposited under the condition of low bias voltages, whereas (111) under high bias voltages. No cracks were observed in the films deposited on the A5052 and A2017 substrates under the bias voltage below -30V, however, they occurred in the films deposited higher than -20V on A1050 substrate. Low bias voltage should be essential to obtain thick TiN films on aluminum-base materials. Wear test was made by a ball-on-disk type machine. The depth of wear traces observed in the films with the thickness of 9 μm on A1050 substrate was about 40 μm. However, no wear traces appeared in the other films deposited under low bias voltages; regardless of film thickness. Although the hardness of the film was reduced with using low bias voltage, the wear property was greatly improved by thick TiN coatings. (Keyword) TiN film / Aluminum substrate / Arc ion plating / Wear property / Crystal orientation / X-ray diffraction (Link to Publication Site) ● Publication site (DOI): 10.2472/jsms.50.732 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282680369480192 ● Summary page in Scopus @ Elsevier: 2-s2.0-0035387887 (DOI: 10.2472/jsms.50.732, CiNii: 1390282680369480192, Elsevier: Scopus)
38.	Kazuya Kusaka and Takao Hanabusa : Crystal Orientation and Residual Stress in Chromium Nitride Films Deposited by Arc-Ion Plating, Materials Science Research International, Special Technical Publication, Vol.1, 299-302, 2001. (Summary) Chromium Nitride (CrN) films are considered to be useful as piston ring and connecting rod materials in engines because such films are very hard and durable. We investigated the hardness and roughness of CrN films deposited on steel (JIS: S50C) substrates by the arc-ion plating (AIP) method, and the crystal orientation and residual stress were investigated by X-ray diffraction. The CrN films were deposited under the following conditions. The pressure of the nitrogen atmosphere was maintained at a constant 2.66 Pa, the substrate temperature was maintained at about 573 K, the arc discharge current was 50 and 100 A in two separate tests, the bias voltage applied to the substrate was varied between -300 and 0 V, and the table-mounted substrate holder was rotated at 3 rpm. We obtained the following results: (1) the Vickers micro-hardness of the films was about 1500 HV at low bias voltage (V_B=0 V) and about 2500 HV at negative bias voltages exceeding -10 V, (2) the surface of films became smoother with increasing in negative bias voltage, (3) X-ray diffraction patterns revealed that the film is {111}-oriented at low arc current (I_A=50 A) and low bias voltage (V_B=0 V), {100}-oriented at high arc current (I_A=100 A) and low bias voltage (V_B=0 V), and {110}-oriented at negative bias voltages exceeding -100 V, and (4) compressive residual stress was observed in almost all films.
39.	Makoto Nisiike, Takao Hanabusa and Kazuya Kusaka : X-Ray Evaluation of Laser-Peened Aluminum Surface, Materials Science Research International, Special Technical Publication, Vol.1, 285-290, 2001. (Summary) Shot peening is a technique that improves the surface properties of materials by inducing compressive residual stress and work hardening in the surface layer. It has been practiced in a broad range of engineering fields, in particular for machine parts that are subject to cyclic loading. Laser peening has recently been developed as a new surface modification technique. When a high-energy pulse laser irradiates a material surface submerged in water, high pressure plasma is generated immediately in front of the surface. The plasma induces impulse waves that penetrate into the surface layer. In the present study, a second harmonic generation of Yttrium-Aluminum-Garnet (YAG) laser passing through water was used irradiate the surface of aluminum specimens. The effect of pulse energy and laser focus point on surface modification was investigated. The residual stress that developed as a result of laser peening was evaluated by X-ray stress measurement. The following results were obtained: (1) high laser power, 7.0, developed plastic deformation and residual stress; (2) when the laser beam was converged in front of the surface, compressive residual stress was induced, whereas tensile residual stress was induced when the focus was beyond the surface; (3) the surface roughness was higher for focusing in front of the surface than for beyond; (4) the hardened depth was estimated to be about 10 μm at the laser power of 7.0.
40.	Yasuhiro Miki, Tadashi Taniguchi, Takao Hanabusa, Kazuya Kusaka and Tatsuya Matsue : X-ray Stress Measurement and Mechanical Properties of TiN Films Coated on Aluminum and Aluminum Alloy Substrates by Arc Ion Plating and Ion Beam Mixing, Materials Science Research International, Vol.6, No.4, 243-248, 2000. (Summary) TiN coatings on cutting tools have greatly succeeded in prolongation of tool lives. In the present study, TiN film deposition was tried on a surface of aluminum and aluminum alloy substrates by means of an arc ion plating (AIP) method and an ion beam mixing (IBM) method. The aim is to develop aluminum-based materials having strong wear resistance. In order to examine the hardness and residual stress of TiN films, the bias the voltage and N₂ gas pressure were varied in the AIP treatment and the titanium deposition rate was changed in the IBM treatment. Vickers hardness test revealed high values (HV=1800∼2400). The TiN films coated by the AIP and the IBM methods exhibited very high {111} and {110} preferred orientations, respectively. The two-exposure X-ray stress measuring method was used to measure residual stresses in the TiN film. Large compressive residual stresses of -6.3∼ -2.3 GPa were developed at lower N₂ gas pressures for the AIP method and at higher Ti deposition rates for the IBM method. A wear experiment was also made with a ball-on-disk type wear testing machine. The depth and the width of wear traces on the surface of specimens were greatly reduced when TiN coatings were applied. (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0034453044 (Elsevier: Scopus)
41.	Kazuya Kusaka, Daisuke Taniguchi, Takao Hanabusa and Kikuo Tominaga : Effect of Input Power on Crystal Orientation and Residual Stress in AlN Film Deposited by dc Sputtering, Vacuum, Vol.59, No.2-3, 806-813, 2000. (Summary) The crystal orientation and residual stress development in AlN films deposited by dc planar magnetron sputtering on a glass substrate were investigated by atomic force microscopy (AFM) and X-ray diffraction. The microscopic surface morphology, the film thickness and the crystal orientation were investigated for films that were deposited at a constant N₂ gas pressure and a constant heating temperature of the substrate at various input powers. The following results were obtained: (1) the crystal grain size and the film thickness increased with increasing input power; (2) c-axis orientation was slightly good at high input power; (3) tensile residual stresses were obtained at low input power and large compressive stresses were obtained at high input powers of P=154 and 180 W. (Link to Publication Site) ● Publication site (DOI): 10.1016/S0042-207X(00)00351-1 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0001424183 (DOI: 10.1016/S0042-207X(00)00351-1, Elsevier: Scopus)
42.	Tatsuya Matsue, Takao Hanabusa, Yasuhiro Miki, Kazuya Kusaka and Eiji Maitani : Residual Stress in TiN Film Deposited by Arc Ion Plating, Thin Solid Films, Vol.343-344, 257-260, 1999. (Summary) TiN films were deposited on aluminum and stainless steel substrates by arc ion plating (AIP). Bias voltages, nitrogen gas pressures and arc currents were changed to examine their role on the hardness and residual stress of a TiN film. Vickers microhardness tests revealed high hardness value (HV = 2250 ∼ 2500) which depends on both nitrogen gas pressures and arc currents. From the X-ray diffraction pattern, it was found that the crystal orientation of the TiN film markedly varied with the bias voltage. Residual stresses in the TiN film were measured by the two-exposure X-ray stress analysis as a function of the nitrogen gas pressure, arc current. Very high compressive residual stresses, -5 GPa in the films on aluminum substrates and -7 GPa in the film on a stainless steel substrate, were observed.
43.	Takao Hanabusa, Hiroyosi Hosoda, Kazuya Kusaka and Kikuo Tominaga : Abnormal Residual Stress State in ZnO Films Synthesized by Planar Magnetron Sputtering System with Two Facing Targets, Thin Solid Films, Vol.343-344, 164-167, 1999. (Summary) The structure and residual stresses of ZnO films synthesized by a planar magnetron sputtering system with two facing targets were investigated by X-ray diffraction. ZnO films were deposited onto a sheet of Corning 7059 glass. The X-ray diffraction pattern shows that the film has high [00·1} orientation. Residual strains were measured on various diffraction lines that appear at special angles from the surface normal. The strains taken from positive and negative differed from each other. This behavior is deduced from the existence of a shear stress component in a cross-section of the film. The magnitude of the shear stress increased with increasing current density of the Zn target as well as with decreasing argon gas pressure.
44.	Yasuhiro Miki, Tadasi Taniguchi, Kazuya Kusaka, Takao Hanabusa and Eiji Maitani : Mechanical Properties of TiN Films Deposited on Aluminum Substrates by Arc Ion Plating Method, Transactions of The Japan Society of Mechanical Engineers, Series A, Vol.65, No.635, 1635-1641, 1999. (Summary) TiN film, 3μm in thickness, was deposited on aluminum (JIS A 1050) and aluminum alloy (JIS A 2017 and JIS A 5052) substrates by an Arc Ion Plating (AIP) method. Bias voltage and N₂ gas pressure were changed to examine their role on hardness and residual stress of TiN film. Wear experiment was also conducted using a ball-on-disk type wear apparatus. Vickers hardness tests revealed high value (HV = 2100~2400) which depends on both bias voltage and N₂ gas pressure. The TiN films exhibited very high {111} preferred orientation. Residual stresses in the TiN film were measured by the two-exposure X-ray stress measuring method as a function of N₂ gas pressure. Very high compressive residual stresses, -6.3~-4.6 GPa, were observed. The depth of wear scars on the substrate of the processed specimens were greatly shallow.
45.	Kazuya Kusaka, Takahiro Ao, Takao Hanabusa and Kikuo Tominaga : Effect of External Magnetic Field on c-axis Orientation and Residual Stress in AlN Films, Thin Solid Films, Vol.332, No.1-2, 247-251, 1998. (Summary) Crystal orientation and residual stress development in AlN films on borosilicate glass (the thermal expansion coefficient of which is nearly equal to that of AlN) substrate were investigated by atomic force microscopy (AFM) observation and X-ray diffraction method. The AlN films were prepared by a planar magnetron sputtering system with two opposite targets under the condition of constant nitrogen gas pressure, constant substrate temperature, various deposition time and various external magnetic field (EM) between 63 and 128 gauss. We obtain the following results: (1) the size of crystal grains was large and the value of FWHM of 00·2 diffraction line was small at large EM; (2) the c-axis orientation was good for all films; (3) the large tensile residual stresses were obtained at large EM and decreased with decreasing the EM because of ion peening.
46.	Kikuo Tominaga, Yoshifumi Sato, Ichiro Mori, Kazuya Kusaka and Takao Hanabusa : Influence of target shape on properties of AlN sputtered film, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, 5224-5226, 1998. (Summary) AlN films were deposited by reactive magnetron sputtering with a roof-shaped Al target and conventional planar target. The c-axis orientation and the grain growth of AlN films were improved and the defects in the film were decreased, when the ion flux bombarding the film decreased. This trend was confirmed by depositing AlN films under various N₂ gas pressures or external magnetic fields. These data indicate that there remains a considerable influence of ion bombardment in conventional planar magnetron sputtering, but the use of a roof-type target is effective for decreasing the exposure of the film to plasma as a result of a decrease in ion bombardment.
47.	Kikuo Tominaga, Takahiro Ao, Yoshifumi Sato, Ichiro Mori, Kazuya Kusaka and Takao Hanabusa : Magnetic Field Dependence of AlN Films in DC Planar Magnetron Sputtering with Opposed Targets, Vacuum, Vol.51, No.4, 549-553, 1998. (Summary) AlN films were deposited on glass substrates by planar magnetron sputtering with opposed targets. Two kinds of target holders with different magnetic field distributions were used. We investigated how magnetic field configuration in a plasma region affects AlN film properties such as c-axis orientation, optical transmittance spectrum and internal stress. It was found that degree of c-axis orientation of AlN films has a close relation with the magnetic field distribution in the facing target system. When magnetic field distribution in the chamber was designed so that electrons could escape outward from the plasma region, AlN films could be deposited with little damage.
48.	Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga and Takahiro Ao : Residual Stress Measurement in AlN Film Deposited by Alternating Sputtering Method, Journal of the Society of Materials Science, Japan, Vol.46, No.12, 1429-1435, 1997. (Summary) Crystal orientation and residual stress development in AlN films deposited on BLC glass (Borosilicate glass; the thermal expansion coefficient of which is nearly equal to that of AlN) substrates were investigated by X-ray diffraction method. The AlN films were prepared by an alternating planar magnetron sputtering system under the condition of constant substrate temperature, various nitrogen gas pressures between 0.17 Pa and 1.1 Pa and various switching time to alternate the anodic and cathodic polarity of two target electrodes between 30sec and 600sec. The measurement of intensity from 00·2 diffraction showed that c-axis orientation of AlN film was improved when the film was deposited at low nitrogen gas pressure below 0.5 Pa and large switching time over 300sec. The tensile residual stresses were found in the films deposited at low nitrogen gas pressure below 0.3 Pa or high nitrogen gas pressure over 0.8 Pa and short switching time below 120sec.
49.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Plasma Protection Net on Residual Stress in AlN Films Deposited by a Magnetron Sputtering System, Thin Solid Films, Vol.290-291, 260-263, 1996. (Summary) Crystal orientation and residual stress development in AlN films deposited on borosilicate glass (the thermal expansion coefficient of which is nearly equal to that of AlN) substrates were investigated by X-ray diffraction method. The AlN films were prepared by a conventional planar magnetron sputtering system with a plasma protection net under the condition of constant substrate temperature and various nitrogen gas pressures between 0.8 Pa and 13 Pa. We found that the residual stresses show the same qualitative tendency against the nitrogen gas pressure independent of the use of the plasma protection net. Large tensile residual stress was observed at high nitrogen gas pressure and large compressive residual stress was observed at low gas pressure. When the plasma protection net was used, residual stresses in the AlN film were shifted to the compressive side.
50.	Kazuya Kusaka, Takao Hanabusa, Masayuki Nishida and Fukuji Inoko : Residual Stress and in-situ Thermal Stress Measurement of Aluminum Film Deposited on Silicon Wafer, Thin Solid Films, Vol.290-291, 248-253, 1996. (Summary) Residual stresses in aluminum film deposited on a silicon wafer were measured after annealing and quenching. In all cases, residual stresses were tensile, but slow cooling produced lager stresses than quenching. Residual stresses of slow-cooled samples became relaxed after annealing above 300℃. Film passivation by carbon deposition retarded the relaxation of residual stress. In-situ X-ray stress measurement revealed that compressive stresses developed in a heating stage and tensile stresses in a cooling stage. From a scanning electron microscopy observation, it becomes clear that the former contributes to nucleation of hillocks and the latter to void formation and growth.
51.	Kikuo Tominaga, Takahir Ao, Ichirou Mori, Kazuya Kusaka and Takao Hanabusa : Gas pressure dependence of AlN film properties in alternating sputtering system, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.35, No.9B, 4972-4975, 1996. (Summary) AlN films were prepared in N₂ and N₂/Ar gas by the alternating DC sputtering method wherein two Al targets facing each other were sputtered alternately, and the mechanism of film damage in AlN film preparation was investigated. When the gas pressure was lower than 3 mTorr, the crystalline orientation of the film inclined slightly toward the direction of incidence of depositing atoms. In this system, the influence of plasma exposure on the film properties was decreased. This was due to the decrease of electron flow into the substrate. Degradation of the c-axis orientation was ascribed to both the tilt of the growth direction of the (00·2) plane at low gas pressures and film bombardment by positive ions with energies above 60 eV.
52.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by the Planar Magnetron Sputtering System, Thin Solid Films, Vol.281-282, 340-343, 1996. (Summary) The crystal orientation and residual stress development in AlN films deposited on borosilicate (BLC) glass substrates were investigated by X-ray diffraction. Deposition was performed using two kinds of planar magnetron sputtering system: a conventional system (CPM system) and a special system with two facing targets (FTPM system). The nitrogen gas pressure (P_N) was varied over a suitable range for each system. The diffraction patterns of the AlN films showed that the c-axis orientation was improved when the films were deposited using the CPM system at a nitrogen gas pressure lower than 1 Pa. For the CPM system, compressive residual stress was found in films deposited at P_N ≦ 2 Pa and tensile residual stress at P_N > 2 Pa/ For the FTPM system, tensile residual stress was found in films deposited at P_N < 0.8 Pa and compressive residual stress at P_N > 0.8 Pa.
53.	Kikuo Tominaga, Shozo Inoue, R.P. Howson, Kazuya Kusaka and Takao Hanabusa : TiN films prepared by unbalanced planar magnetron sputtering under controle of photoemission of Ti, Thin Solid Films, Vol.281-282, 182-185, 1996. (Summary) TiN films have been prepared by unbalanced planar magnetron sputtering, where the flux of sputtered Ti atoms was maintained constant by adjusting N₂ gas flow during sputtering. At a set point of 75% of the Ti signal in the pure Ar gas, the film resistivity has a minimum, the film stress becomes a minimum and the appearance is most gold-like. With an increase in ion bombardment, the internal stress increases, whereas the film resistivity decreases. These results confirm that stoichiometric TiN films are prepared at the set point of 75%, where the target surface is not fully covered by TiN. The energetic ions appear to improve the properties of the TiN films.
54.	Shozo Inoue, Kikuo Tominaga, Ronald P Howson and Kazuya Kusaka : Effects of Nitrogen Pressure and Ion Flux on the Properties of Direct Current Reactive Magnetron Sputtered Zr-N Films, Journal of Vacuum Science & Technology A, Vol.A13, No.6, 2808-2813, 1995. (Summary) Zr-N films have been deposited by direct current reactive magnetron sputtering using a plasma emission monitoring (PEM) control system, where a signal proportional to the light emitted by the sputtered Zr in the plasma created by the electrical discharge was used to control the admission of the reactive nitrogen into the system. The Zr line set point for PEM control, φ, was used as a parameter; as the partial pressure of nitrogen rises the Zr line emission falls due to target poisoning. The influence of the nitrogen partial pressure on the Zr-N film structure, reflectivity, resistivity, and internal stress was investigated. The effect of ion flux during film deposition on the film properties was also investigated. The Zr-N films deposited at the Zr line set point φ=60%-70% revealed the minimum resistivity and gold-like reflectivity spectra. These films showed a ZrN single phase. The internal stress of the films showed a maximum at φ=60%-70%, which corresponds to the condition for depositing minimum resistivity films. The external magnetic field scarcely affected the optical and the electrical properties of the deposited Zr-N films. The internal stress of the films deposited at the lower φ (higher nitrogen partial pressure) was only dependent on the ion flux.
55.	Kikuo Tominaga, Kazuya Kusaka, Mufei Chong, Takao Hanabusa and Yoshihiro Shintani : Film Degradation in AlN Preparation by Facing Target System, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.33, No.9B, 5235-5239, 1994. (Summary) In AlN films prepared by the facing target system, a decrease in degree of c-axis orientation, film coloring and film cracking or peeling from the substrate were observed. This film degradation is thought to be related to insulative films in general. In order to clarify how these phenomena are induced, we prepared samples under various sputtering conditions; i.e., by changing target holders, placing a ground mesh in front of the substrate and using a positively biased electrode. It is confirmed that plasma exposure severely influences c-axis orientation of AlN films. To decrease this influence, it is important that electrons flow adequately into the anode.
56.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effects of Plasma Contamination on Crystal Orientation and Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering, Journal of the Society of Materials Science, Japan, Vol.43, No.490, 799-805, 1994. (Summary) Crystal orientation and residual stress development in AlN films deposited on BLC glass (Borosilicate glass; the thermal expansion coefficient of which is nearly equal to that of AlN) substrate were investigated by an X-ray diffraction. Deposition was made by a conventional planar magnetron sputtering system under the nitrogen gas pressure of 0.65 Pa at the substrate temperature between 423K and 523K. In order to investigate the effect of plasma contamination, the distance between the target and the substrate holder (target distance d_T) was chosen at 30 mm and 60 mm. The intensity of 00·2 diffraction showed that the c-axis orientation of AlN films was improved by the deposition with a short target distance (d_T=30 mm). However, in all the AlN films deposited with d_T=30 mm, fine cracks were observed probably due to the effect of plasma contamination. In the films deposited with a long target distance (d_T=60 mm), large tensile residual stress greater than 1 GPa was found at every substrate temperature used in the present investigation. In the film deposited with d_T=30 mm, tensile residual stress became larger with increasing substrate temperature. As compared with the AlN films deposited with d_T=60 mm, the tensile residual stress in AlN films deposited with d_T=30 mm considerably decreased because of the effect of ion bombardment.
57.	Takao Hanabusa, Kazuya Kusaka, Kikuo Tominaga and Haruo Fujiwara : Dependence of Substrate and Its Temperature on Residual Stress in AlN Films Deposited by Sputtering, Journal of the Society of Materials Science, Japan, Vol.42, No.477, 627-633, 1993. (Summary) Crystal orientation and residual stress development in AlN films deposited on BLC glass and quartz substrates were investigated by an X-ray diffraction method. The deposition was made by a planar magnetron sputtering system with two facing targets under the nitrogen gas pressure of 0.39Pa in the substrate temperature range between 373K and 553K. The measurement of diffraction intensity from (00·2) plane showed that the c-axis orientation of AlN films was improved when deposited at higher substrate temperatures than 523K. Large tensile residual stresses, 0.9 ∼ 1.4 GPa for the BLC substrate and 1.4 ∼ 2.7 GPa for the quartz substrate, were found in the films deposited at low substrate temperatures ( ≦ 523K). Especially, the residual stress in the film on a quartz substrate showed a large increase with substrate temperature, whereas that on a BLC substrate showed a small increase. A very small stress was found in the film deposited at high substrate temperatures (> 523K) for both substrates. The role of intrinsic and thermal residual stresses on residual stress development was discussed.

Academic Paper (Unrefereed Paper):

1.	Takao Hanabusa and Kazuya Kusaka : TiNおよびTiAlN膜の応力のX線的評価, リガクジャーナル, Vol.35, No.2, 20-27, 2004. (Summary) AIP法によりステンレス鋼基板に成膜したTiN およびTiAlNの積層膜の残竜王りょっくをシンクロトロン放射光により測定した研究である．厚さ1ミクロン以下0.01ミクロンまでのTiN薄膜の結晶配向性および残留応力を測定した．通常のX線装置では薄膜の厚さが0.5ミクロン以下のときは測定が不可能であるが，シンクロトロン放射光を用いることで薄い薄膜の残留応力測定が可能になった．また，積層膜の各層の残留応力測定もシンクロトロンにより初めて測定可能になった．TiN 膜には-2∼-4GPaの応力，TiAlN膜には-8GPaの応力が観測された．
2.	Takao Hanabusa, Kazuya Kusaka, 新宮原正三, 坂田修身 and 松英達也 : ナノサイズアルミニウム配線のエレクトロニクスマイグレーション誘起応力の挙動, SPring-8ナノテクノロジー研究, Vol.2 2003A, 10-12, 2003.

Academic Letter:

1.	Hitoshi Takagi, Antonio Norio Nakagaito, Kazuya Kusaka and Yuya Muneta : Development of green nanocomposites reinforced by cellulose nanofibers extracted from paper sludge, Modern Physics Letters. B, Vol.29, No.06n07, 1540025_1-1540025_5, 2015. (Link to Publication Site) ● Publication site (DOI): 10.1142/S0217984915400254 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84928392287 (DOI: 10.1142/S0217984915400254, Elsevier: Scopus)

Review, Commentary:

1.	桐山聰, Kazuya Kusaka, Takao Hanabusa and 辛動勲 : Innovative and Creative Learning Activities have started off : The Activity of the Center for Innovation and Creativity Development, Journal of University Education Research, Vol.2, No.2, 113-124, Mar. 2005. (Summary) 平成16年4月に開設された徳島大学創成学習開発センターの活動報告である．創成学習開発センターは「自主」「共創」「創造」を中核のコンセプトとし，学生の自主的な創造的学習法を開発するためのセンターである．学生たちの活動拠点であるイノベーションプラザにおいて平成16年10月から10件のプロジェクトが動き出した．学生たちは，異分野横断的な環境に身を置くことで，今までとは全く異なる知識や考え方を生み出している．また，グループ活動の中でチームプレーの大切さと一致団結の難しさ，チームにおける自分の役割への理解や自覚を涵養している．工学部との共催による5大学連携教育シンポジウムの開催，講演会，ホームページの開設などでセンターの活動の発進も開始された． (Keyword) Innovation and Creativity / The Center for Innovation and Creativity Development / The innovation Plaza / project activity (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1050302172854754304 (CiNii: 1050302172854754304)
2.	Kenji Suzuki and Kazuya Kusaka : The Fundamental Principles and Techniques of X-Ray Stress Measurement and Current in the Field - 5: Application to Advanced Materials, Journal of the Society of Materials Science, Japan, Vol.48, No.3, 308-314, Mar. 1999.

Proceeding of International Conference:

1.	Kazuya Kusaka, Kenta Shirasaka, Daisuke Yonekura and Yuta Tanaka : Residual stress measurement of {211}-oriented CrN layers in CrN/Cr multilayer films, Proceedings of the 15th International Symposium on Sputtering & Plasma Processes (ISSP 2019), 183-186, Kanazawa, Jun. 2019.
2.	Kazuya Kusaka, Kenta Shirasaka, Daisuke Yonekura and Yuta Tanaka : Measurement of the residual stress in CrN films deposited on an Al alloy substrate using AIP method, Proceedings of the 15th International Symposium on Sputtering & Plasma Processes (ISSP 2019), 53-56, Kanazawa, Jun. 2019.
3.	Kazuya Kusaka, Yutaka Maruoka and Tatsuya Matsue : Residual stress and bending strength of ZnO films deposited on polyimide sheet by rf sputtering system, The 13th international symposium on sputtering & plasma prosesses, 407-410, Jul. 2015. (Keyword) residual stress / sputtering / Zinc oxide film
4.	Ming Cai, Hitoshi Takagi, Antonio Norio Nakagaito, Kazuya Kusaka, Masahiro Katoh and Yang Li : Influence of alkali concentration on morphology and tensile properties of abaca fibers, Program and Abstract Book for 7th International Conference AMDP 2014, 136, Busan, Jul. 2014.
5.	Hitoshi Takagi, Antonio Norio Nakagaito, Kazuya Kusaka and Yuya Muneta : Development of nanocomposites reinforced by cellulose fibers from paper sludge, Program and Abstract Book for 7th International Conference AMDP 2014, 64, Busan, Jul. 2014.
6.	Ming Cai, Hitoshi Takagi, Antonio Norio Nakagaito, Kazuya Kusaka, Masahiro Katoh and Yan Li : Effects of alkali treatment on microstructure and tensile properties of abaca fiber, Proceedings of the SAMPE CHINA 2013, S5-6_1-S5-6_4, Shanghai, Oct. 2013.
7.	Kazuya Kusaka and Kikuo Tominaga : Residual stress measurement in metal interlayer of metal-ceramics functionally graded thin film, Proceedings of the twelfth international symposium on sputtering & plasma processes, 142-145, Kyoto, Jul. 2013.
8.	Bistamam Shahril Amin Mohd, Hitoshi Takagi, Antonio Norio Nakagaito, Masahiro Katoh, Kazuya Kusaka and Jitendra Kumar Pandey : Development of green nanocomposites reinforced by cellulose nanofibers from waste newspaper, Proceedings of the Ninth Joint Canada-Japan Workshop on Composites, J21_1-J21_8, Kyoto, Jul. 2012.
9.	Norihisa Shimamura, Kosuke Harada, Shingo Kuno, Shinsuke Nakanishi, Takahumi Nakagawa, Satoshi Nishino, Takao Hanabusa, Shoichiro Fujisawa and Kazuya Kusaka : Activity of Tatara Project, Proceedings of Asian Conference on Engineering Education 2009 (ACEE2009), 213-214, Busan, Oct. 2009. (Summary) たたらプロジェクトは徳島大学の学生自主プロジェクトとして2005年から活動している．たたらプロジェクトの目的は，プロジェクト活動を通して伝統の和鋼の製作過程の情報を得ることである．得られた情報は教材として編集される．2005年に鋼を作るためのたたら炉を製作した．この炉は眞鍋型たたら炉と呼ばれている．それからけらからナイフの製作を行った．2006年にはe-ラーニング教材を制作した．これまでのたたらプロジェクトの取り組みについて報告する．
10.	Shinohara Mitsuhiko, Takao Hanabusa and Kazuya Kusaka : Residual stress development in Cu thin films with and without AlN passivation by cyclic plane bending, AMDP 2008 Program & Abstract Book, 93, Beijing, China, Oct. 2008. (Keyword) Thin film / Bending fatigue / Residual stress / X-ray stress measurement
11.	Isoda Hirokazu, Kazuya Kusaka and Takao Hanabusa : Evaluation of residual stresses induced by laser peening, AMDP 2008 Program & Abstract Book, 92, Beijing, China, Oct. 2008. (Keyword) Laser peening / residual stress / X-ray diffraction / X-ray stress measurement
12.	Takao Hanabusa, Kazuya Kusaka and Nishida Masayuki : Diffraction stress measurement on coarse graind materials, The 8th International Conference on Residual Stresses, Denver, USA, Aug. 2008. (Keyword) X-rau stress measurement / Neutron stres measurement / Coarse grain / Residual stress
13.	Okada Kenji, Kikuo Tominaga, Retsuo Kawakami, Ohkura Shinya, Kazuya Kusaka and Takao Hanabusa : Deposition of photocatalytic tiO2 films by planar magnetron sputtering system with opposed Ti targets, 14th International Conference on Solid Films and Surfaces, 331-332, Dublin, Jul. 2008.
14.	Takao Hanabusa, Masayuki Nishida and Kazuya Kusaka : Thermal stress behavior of micro- and nano-size aluminum films, International Conference on Neutron and X-ray Scattering 2007, 21-27, Bandung, Indonesia, Jul. 2007.
15.	Kikuo Tominaga, Miyamoto Yoshinori, Ohkura Shinya, Kazuya Kusaka and Takao Hanabusa : Comparison of film depositions of anatase TiO2 by planar magnetron sputtering with opposed Ti targets and conventional Ti targets, The 20th Symposium on Plasma Science for Materials, 108, Nagoya, Jun. 2007.
16.	Kazuya Kusaka, Takao Hanabusa, Shingubara Shoso, Tatsuya Matsue and Osami Sakata : Measurement of electromigration-induced stress in aluminum interconnection, Proceedings of the Ninth International Symposium on Sputtering and Plasma Process, 411-414, Kanazawa, Jun. 2007.
17.	Takao Hanabusa and Kazuya Kusaka : Stress Assisted Atomic Migration in Copper Thin Films, Proceedings of the Ninth International Symposium on Sputtering and Plasma Process, 229-232, Kanazawa, Jun. 2007.
18.	Tatsuya Matsue, Takao Hanabusa, Kazuya Kusaka and Osami Sakata : Alteration of Residual Stresses in TiN Films by Synchrotron Radiation due to Heat Treatment, Proceedings of the Ninth International Symposium on Sputtering and Plasma Process, 127-130, Kanazawa, Jun. 2007.
19.	Takao Hanabusa, Kazuya Kusaka and Masayuki Nishida : Stress-assisted atomic migration in thin copper films, APCFS'06, 22-25, Hainan Iland, China, Nov. 2006.
20.	Takao Hanabusa and Kazuya Kusaka : Encouragement of student activities by presentation evaluation, Proceeding of the 34th SEFI Annual Conference, 109, Uppsala, Sweden, June 2006, Jun. 2006.
21.	Kazuya Kusaka, Takao Hanabusa, Satoshi Kiriyama, Tetsushi Ueta, Akio Tsuneda and Takuo Nagamachi : Mutual evaluation of presentation skills between two distant universities by giga-bit network, Abstract of 6th Asian-Pacific Conference on PBL, 79, Tokyo, May 2006.
22.	Satoshi Kiriyama, Ikeda Yuuichi, Kazuya Kusaka, Masanobu Haraguchi and Takao Hanabusa : The Good Result of Independent Project Activities by Students and the New prospect of Creativity Education, Proceedings of The 1st International Conference Design Engineering and Science (Proc. of ICDES2005), 369-373, Wien, Oct. 2005.
23.	Tatsuya Matsue, Takao Hanabusa, Yasukazu Ikeuchi, Kazuya Kusaka and Osami Sakata : Alteration of internal stresses in SiO₂/Cu/TiN thin films by synchrotron radiation due to heat treatment, The 8th International Symposium on Sputtering and Plasma Processes, Kanazawa, Japan, Jun. 2005.
24.	Kazuya Kusaka, Takao Hanabusa, Shoso Shingubara, Tatsuya Matsue and K. Ohshima : Behavior of electromigration-induced stress in nano-sized aluminum interconection, The 8th International Symposium on Sputterring and Plasma Processes, Kanazawa, Japan, Jun. 2005.
25.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : Thermal stress behavior in nano-size thin aluminum films, Advanced Materials Development & Performance Conference 2005, 157, Auckland, New Zealand, Jun. 2005.
26.	Kazuya Kusaka, Takao Hanabusa, Shoso Shingubara, K. Noda and K. Oshima : The 8th International Sympsium on Sputtering & Plasm Processes, MN-P-3, Kanazawa, Jun. 2005.
27.	Tatsuya Matsue, Takao Hanabusa, Yasukazu Ikeuchi, Kazuya Kusaka and Osami Sakata : Alteration of internal stresses in SiO2/Cu/TiN thin films by synchrotron radiation due to heat treatment, The 8th International Symposium on Sputtering & Plasma Processes, TF-P1-13, Kanazawa, Jun. 2005.
28.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : In-situ observation of thermal stress in nano-size thin aluminum films, The Seventh International Conference on Residual Stresses, Xi'an, China, Jul. 2004.
29.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : In-situ Thermal Stress Measurement of Thin Films During Thermal Cycling, Proceedings of 4th International Forum on Advanced Materila Science and Technology, Troyes([France]), Jul. 2004. (Summary) ガラス基板およびシリコン基板上に成膜した薄膜の熱応力挙動を実験室用のX線応力測定装置およびSpring-8のシンクロトロン放射光を用いてその場測定した研究である．試料はマイクロサイズおよびナノサイズの厚さのアルミニウム膜であり，保護膜の有無による熱応力挙動の効果を観察した．すべての膜において成膜後の残留応力は引張であった．試料を加熱すると薄膜中の応力は圧縮に変化し，冷却により再び引張に変化した．厚い膜の応力は室温からの加熱で非線形的な挙動を示して圧縮に変化し，それに続く冷却過程で引張に変化する．この加熱と冷却の過程で膜の応力は異なる応力値を示しヒステリシスを描いた．20および10ナノメートルサイズの膜の熱応力は加熱冷却過程で線形的な挙動を示し，ヒリシスも観測されなかった．膜の降伏応力の温度依存性および膜厚依存性の因子さらに保護膜の有無の条件を導入して薄膜の熱応力挙動を考察した．
30.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : In-situ Observation of Thermal Stress in Nano-size Thin Films, Proceedings of 16th International Vacuum Congress, Venice([Italy]), Jun. 2004. (Summary) シリコン基板上に成膜した薄膜の熱応力挙動をシンクロトロン放射光を用いてその場測定した研究である．試料はナノサイズの厚さのアルミニウム膜であり，その上にSiO2の保護膜をつけたものである．薄膜の厚さは10nm，20nm，50nmである．成膜後の残留応力は引張であった．試料を300℃まで加熱すると薄膜中の応力は圧縮に変化し，冷却により再び引張に変化した．厚さ50nmの膜の応力は室温から300℃までの最初の熱サイクルで非線形的な挙動を示し，2回目のサイクルでは線形的な挙動を示した．それに対して，厚さ10nmの膜の応力はほぼ線形的な変化をし，加熱冷却過程でヒステリシスも観測されなかった．薄膜の熱応力挙動を膜の降伏応力の温度依存性および膜厚依存性の因子を導入して考察した．
31.	Kazuya Kusaka, Takao Hanabusa, Shoso Shingubara, Tatsuya Matsue and Osami Sakata : In-situ thermal stress measurement in nano-sized aluminum and copper films with SOG passivation, AIP Conference Proceedings of Stress-induced Phenomena in Metallization, Vol.741, 229-235, Austin([USA]), Jun. 2004. (Summary) ガラス基板およびシリコン基板上に成膜した薄膜の熱応力挙動を実験室用のX線応力測定装置およびSpring-8のシンクロトロン放射光を用いてその場測定した研究である．試料はマイクロサイズおよびナノサイズの厚さのアルミニウム薄膜および銅薄膜であり，それぞれ保護膜の有無による熱応力挙動の効果を観察した．すべての膜において成膜後の残留応力は引張であった．試料を加熱すると薄膜中の応力は圧縮に変化し，冷却により再び引張に変化した．アルミニウム薄膜の結果は，厚い膜の応力は室温からの加熱で非線形的な挙動を示して圧縮に変化し，それに続く冷却過程で引張に変化する．この加熱と冷却の過程で膜の応力は異なる応力値を示しヒステリシスを描いた．20および10ナノメートルサイズの膜の熱応力は加熱冷却過程で線形的な挙動を示し，ヒリシスも観測されなかった．膜の降伏応力の温度依存性および膜厚依存性の因子さらに保護膜の有無の条件を導入して薄膜の熱応力挙動を考察した．銅薄膜については，加熱による膜のはく離により，信頼性の高い結果が得られなかった．
32.	Mitsuhiko Hataya, Takao Hanabusa, Kazuya Kusaka, Kikuo Tominaga, Tatsuya Matsue and Osami Sakata : Residual Stress Measurement in Sputtered Copper Thin Films by Synchrotron Radiation and Ordinary X-rays, Proceedings of the 7th International Conference on Residual Stresses, 661-666, Xi'an, Jun. 2004. (Summary) ナノメートルサイズの厚さのCu薄膜の残留応力をシンクロトロン放射光を用いて測定した研究である．Cu薄膜は石英基板の上にdcプレーナマグネトロンスパッタリング法を用いて2種類の基板温度の条件の下で成膜した．さらに，原子間力顕微鏡を用いて膜表面の観察を行った．これらの測定の結果，基板上での膜の形成過程を明らかにし，200nm以上の厚さになると{111}配向すること，さらに，残留応力はすべての場合引張であること，また，膜の構造により残留応力の緩和が起こることを観察した．
33.	Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga and Noriyoshi Yamauchi : Effect of Substrate Temperature on Crystal Orientation and Residual Stress in RF Sputtered Gallium Nitride Films, Proceedings of the 7th International Conference on Residual Stresses, 613-618, Xi'an, Jun. 2004. (Summary) 本論文は，RFスパッタリング法で作製したGaN膜についてX線的に特性評価したものである．GaNの低温スパッタリング技術の研究として，スパッタリングシステムを用いて(0001)単結晶サファイア基板上に堆積した窒化ガリウム(GaN)試料を作成した．この試料の結晶配向性と残留応力をX線回折法により調べた．高周波スパッタリングシステムは，不純物による汚染を防ぐために孤立した堆積室を持ち，高純度窒化膜を生成することが期待できる．いろいろな基板温度，一定のガス圧，一定の供給電力でGaN膜を堆積した．このシステムにより，基板面法線方向にGaN結晶のc軸が優先配向し，良い結晶配向性を有するGaN膜の生成することがわかった．高温で堆積した膜の結晶サイズは，低TSで生成したものよりも大きくなる．残留応力は圧縮であり，堆積温度の上昇と共に減少することがわかった．
34.	Dongying Ju, Tomio Ueda, Takashi Hatakeyama, Takuya Arizono, Kazuya Kusaka and Takao Hanabusa : Evaluation of Residual Stress in Nano-TiO2 Film on ITO Glass by Synchrotron X-Ray Diffraction, Proceedings of the 7th International Conference on Residual Stresses, Xi'an, Jun. 2004. (Summary) ITOガラス基板上に成膜したナノメートルサイズ厚さのTiO2膜の残留応力を測定評価した研究である．30nm以下の厚さの薄膜を2元アークマグネトロンスパッタリング法により成膜した．ガス圧は10Paおよび20Paである．膜の表面の微視的観察および結晶組織の観察を原子間力顕微鏡で行った．また，残留応力評価の基礎となる膜の弾性定数を3点曲げ治具を使ってナノインデンテーション法で行った．残留応力測定にはSpring-8のシンクロトロン放射光を用いた．10Paおよび20Paで成膜したTiO2膜にはそれぞれ-11.6GPaおよび-9.1GPaの残留応力が存在することを観測した．また，TiO2膜の残留応力がガス圧とともに減少することも観測した．
35.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : In-situ Observation of Thermal Stress in Nano-size Thin Aluminum Films, Proceedings of the 7th International Conference on Residual Stresses, Xi'an, Jun. 2004. (Summary) シリコン基板上に成膜した薄膜の熱応力挙動をシンクロトロン放射光を用いてその場測定した研究である．試料はナノサイズの厚さのアルミニウム膜であり，その上にSiO2の保護膜をつけたものである．薄膜の厚さは10nm，20nm，50nmである．成膜後の残留応力は引張であった．試料を300℃まで加熱すると薄膜中の応力は圧縮に変化し，冷却により再び引張に変化した．厚さ50nmの膜の応力は室温から300℃までの最初の熱サイクルで非線形的な挙動を示し，2回目のサイクルでは線形的な挙動を示した．それに対して，厚さ10nmの膜の応力はほぼ線形的な変化をし，加熱冷却過程でヒステリシスも観測されなかった．薄膜の熱応力挙動を膜の降伏応力の温度依存性および膜厚依存性の因子を導入して考察した．
36.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : In-situ observation of thermal stress in nano-size thin films, 16th International vacuum congress, Venice, Italy, 2004.
37.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara and Osami Sakata : In-situ thermal stress measurement of thin films during thermal cycling, 4th International forum on advanced materials science and technology, Troyes, France, 2004.
38.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Measurement of Crystal Orientation and Residual Stress in GaN Film Deposited by RF Sputtering with Powder Target, Proceedings of the Seventh International Symposium on Sputtering and Plasma Process, 157-160, Kanazawa, Jun. 2003. (Summary) 本論文は，RFスパッタリング法で作製したGaN膜についてX線的に特性評価したものである．GaNの低温スパッタリング技術の研究として，スパッタリングシステムを用いて(0001)単結晶サファイア基板上に堆積した窒化ガリウム(GaN)試料を作成した．この試料の結晶配向性と残留応力をX線回折法により調べた．高周波スパッタリングシステムは，不純物による汚染を防ぐために孤立した堆積室を持ち，高純度窒化膜を生成することが期待できる．いろいろな基板温度，一定のガス圧，一定の供給電力でGaN膜を堆積した．このシステムにより，基板面法線方向にGaN結晶のc軸が優先配向し，良い結晶配向性を有するGaN膜の生成することがわかった．高温で堆積した膜の結晶サイズは，低TSで生成したものよりも大きくなる．残留応力は圧縮であり，堆積温度の上昇と共に減少することがわかった．
39.	Kikuo Tominaga, Takuya Kikuma, Kazuya Kusaka and Takao Hanabusa : Energetic oxygen ions in ZrO₂ deposition by reactive sputtering of Zr, Proc. 6th International Symposium on Sputtering &Plasma Processes, 434-437, Kanazawa, Jun. 2001. (Summary) Ar+O₂中のZrの反応性スパッタにおいて強い高速酸素が生成することを見出した．これはZrターゲット表面は酸素雰囲気中で，ターゲットの一部が酸化されている状態の金属モードでのスパッタでは急激に酸化が進むことを示す．また，ターゲット表面全体が酸化されている酸化モードのスパッタでは，非常に厚い酸化膜層が形成されていることを示す．
40.	Takao Hanabusa, Yasuhiro Miki, Tatsuya Matsue and Kazuya Kusaka : The Effect of Residual Stresses on the Wear Behavior of TiN Films on Aluminum Substrates, Proceedings of the Sixth International Conference on Residual Stresses, Vol.2, 827-834, Oxford, United Kingdom, Jul. 2000. (Summary) 本論文は，アルミニウム基板上に蒸着したTiN膜に関する研究である．柔らかい基板上にTiN膜をアークイオンプレーティング法により蒸着する方法を開発した．3種の基板を用意し，バイアス電圧と窒素ガス圧を変えてTiN 膜を作製した．TiN膜は{111}配向をしており，その配向性はバイアス電圧が高くなるにつれ劣化した．X線応力測定法としては2点法を使った．残留応力は-6MPa程度であり，基板と膜の熱膨張差による熱残留応力に比べて一桁大きいものであった．摩耗試験の結果，硬い基板上の膜は摩耗がなく耐摩耗膜としての条件を備えた．
41.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Relationship between Grain Size and Residual Stress in AlN Sputtered Film, Proceedings of the Sixth International Conference on Residual Stresses, Vol.1, 391-398, Oxford, United Kingdom, Jul. 2000. (Summary) 本論文は，ガラス基板上にプレーナマグネトロンスパッタリングにより蒸着したAlN薄膜の結晶配向性および残留応力をX線回折法により実験的に調査したものである．通常のプレーナマグネトロンスパッタリング法(CPM)および2枚のターゲットを用いたマグネトロンスパッタリング法(FTPM)により成膜したAlN膜について，膜表面形状と結晶特性を調べた．窒素ガス圧は一定とし，基板温度と蒸着時間をパラメータとした．得られた結果は次のとおりである．(1)FTPMの膜はCPMに比べて結晶粒が大きい．(2)CPMで作製した厚い膜は高いc軸配向性を有する．(3)FTPMで製作した膜および低基板温度で作製した膜は高い引張残留応力を有する．
42.	Kikuo Tominaga, Yoshifumi Sato, Ichiro Mori, Kouhei Furutani, Kazuya Kusaka and Takao Hanabusa : InN film deposition by planar magnetron sputtering, Proceedings of the Second International Conference on Advanced Materials Development & Performance Evaluation and Application, 474-477, Tokushima, Nov. 1999. (Summary) 本論文は，ガラス基板上にRFプレーナマグネトロンスパッタリング法により生成したInN膜の結晶成長，表面形状，電気特性をX線回折，原子間力顕微鏡観察，Hall電圧特性，膜の抵抗特性の測定により観察したものである．作製した膜の結晶はすべてc軸配向を示していた．キャリア密度およびキャリア移動度を測定した．キャリア移動度は結晶粒径と共に増加したが，表面粗さの増大により移動度は減少した．
43.	Kazuya Kusaka, Daisike Taniguchi, Takao Hanabusa and Kikuo Tominaga : Effect of Sputtering Power on Residual Stress in AlN Film Deposited by d.c. Sputtering, Proceedings of the Second International Conference on Advanced Materials Development and Performance Evaluation and Application, 223-228, Tokushima, Nov. 1999. (Summary) 本論文は，dcプレーなマグネトロンスパッタリング法によりガラス基板上に作製したAlN薄膜の結晶配向性および残留応力を，原子間力顕微鏡およびX線回折法により実験的検証をしたものである．薄膜の作製条件としては，一定窒素ガス圧，一定基板温度の下で，スパッタリングパワーをパラメータとして変化させた．得られた結果は次のとおりである．(1)結晶サイズと薄膜の厚さはスパッタリングパワーと共に増加した．もっとも良いc軸配向性はスパッタリングパワーが140Wの時に得られた．(3)スパッタリングパワーが低いときには引っ張り残留応力が，高いとき(154W，および180W)には圧縮残留応力になった．
44.	Takeshi Sugiyama, Masayuki Nishida, Takao Hanabusa and Kazuya Kusaka : FEM Examination of Triaxiality on X-ray Stress Measurement, Proceedings of the Second International Conference on Advanced Materials Development and Performance Evaluation and Application, 895-899, Tokushima, Nov. 1999. (Summary) 本論文は，複合材料の微視的残留応力の分布を有限要素法で計算し，X線応力測定における平面応力および3軸応力解析の基準との関係をあつかったものである．この研究では繊維複合材料を模擬し，異なる繊維径および異なる体積割合をパラメータとして解析を行った．この研究の結果，複合材料の応力をX線的に扱う場合は，通常の平面応力の仮定が満たされず，繊維径や繊維の体積比に依存してsin2ψ線図が非線形になることを明らかにした．
45.	Kouhei Furutani, Bujang Lieng Anak John, Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Depositing Time and Sputtering Power on Residual Stress in InN Films Deposited by RF Sputtering, Proceedings of the Second International Conference on Advanced Materials Development and Performance Evaluation and Application, 887-890, Tokushima, Nov. 1999. (Summary) 本論文は，rfマグネトロンスパッタリング法によりガラス基板上に作製したInN膜の残留応力を測定したものである．膜作製条件として，蒸着時間とスパッタリングパワーをとった．膜表面の微視的状態を原子間力顕微鏡で，膜の残留応力をX線回折法で測定した．120分で作製した膜は最高のc軸配向が示され，残留応力は1700MPaになった．180分および240分の膜はc軸配向性が劣化し，残竜応力はほぼ零であった．スパッタリングパワーが100Wの時表面粗さは最小となり，c軸配向特性も最良に，また残留応力は最高の引張応力になった．
46.	Kunihiko Hashimoto, Kazuya Kusaka and Takao Hanabusa : X-ray Stress Measurement of Sintered Steel, --- A Simulation of Japanease Sword ---, Proceedings of the Second International Conference on Advanced Materials Development and Performance Evaluation and Application, 891-894, Tokushima, Nov. 1999. (Summary) 本論文は，日本刀の残留応力の実験的シミュレーションを行ったものである．日本刀は刀匠により伝統的な経験に基づき鋼の製作，浸炭，鍛造，焼き入れ，焼き戻し，研削，研磨などの作業を通して作られるものである．この日本刀は内部に柔らかい材料，そして外表面に硬い材料を構成する方法がなされており，製作後に内部に残留応力が発生する．この残留応力を模擬するため，低炭素鋼に浸炭処理を施して，炭素量が表面から内部に向けて分布する試料を作った．この試料の内部の硬さ分布および残留応力分布を測定した．浸炭された領域で硬さは上昇し，残留応力は圧縮になり，内部の低炭素領域では元の硬さで残留応力は張りになることを明らかにした．
47.	Daisike Taniguchi, Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Sputtering Power on Residual Stress in AlN Films Deposited by rf Sputtering, Proceedings of the Second International Conference on Advanced Materials Development and Performance Evaluation and Application, 883-886, Tokushima, Nov. 1999. (Summary) 本論文は，ガラス基板上にrfスパッタリング法により蒸着したAlN膜の残留応力測定に関するものである．成膜方法として，通常の平面ターゲットと屋根型ターゲットを用いた．これらの方法で作成した膜のc軸特性および残留応力に及ぼす雰囲気ガス圧およびスパッタリングパワーの依存性をX線回折法により調査した．低ガス圧では平面ターゲットで，また高ガス圧では屋根型ターゲットでよいc軸配向成が得られた．残留応力はスパッタリングパワーが200Wの場合はすべての膜で引張残留応力，100Wの場合に低ガス圧で圧縮，高ガス圧で引張になった．
48.	Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga and Takahiro Ao : Effect of External Magnetic Field on Residual Stress in AlN Films Prepared by Sputtering System, Proceedings of the Second International Conference on Nitride Semiconductors, 378, Tokushima, Oct. 1997. (Summary) 本論文は，AlN薄膜の結晶配向性および残留応力をX線回折法により調べたものである．2枚のターゲットを用いたマグネトロンスパッタリング法により薄膜形成した．本論文では，成膜条件として外部磁場をとり真空容器の外側に作用させる磁場の膜特性に及ぼす影響を調べた．結晶配向成を示すc軸の傾きは磁場に依存しなかったが，残留応力は磁場に依存し，磁場の増加に伴って引張残留応力値が大きくなった．
49.	Takao Hanabusa, Kazuya Kusaka and Masayuki Nishida : Development of Thermal Stress in Aluminum Film on Silicon Substrate, Proceedings of the First International Conference on Advanced Materials Development and Performance Evaluation and Application, 268-273, Auckland, Jul. 1997. (Summary) 本論文は，薄膜のストレスマイグレーションの基本的メカニズムを調べたものである．シリコン基板上のアルミニウム膜について加熱冷却過程での膜の応力のその場測定を行った．保護膜付きのものと保護膜なしのものについての比較を行い，保護膜の有無による原子移動の違いを明らかにした．加熱の初期過程で膜の応力は引張から圧縮側に線形に変化し，その後圧縮応力の増加率が緩和した．冷却過程では圧縮から引張に変化し室温への冷却で引張残留応力になった．加熱過程と冷却過程では応力変動挙動が異なりヒステリシスループを描き，その様子は保護膜の有無で異なった．
50.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System, Proceedings of the First International Conference on Advanced Materials Development and Performance Evaluation and Application, 310-315, Auckland, Jul. 1997. (Summary) 本論文は，BLCガラス基板上に蒸着したAlN膜の結晶配向性および残留応力をX線回折法を用いて調査したものである．蒸着方法としては，通常のプレーナマグネトロンスパッタリング法と2枚のターゲットを用いた方法を使用した．本実験では，窒素ガス圧をパラメータとした．通常の方法を用いた場合，窒素ガス圧が1Pa以下のときに良好なc軸配向性を得た．通常の方法では，残留応力はガス圧が2MPa以下の場合，圧縮であり，2MPaを超えると引張であった．それに対して，2枚のターゲットを用いた方法では，0.8MPa以下の場合に引張であり，0.8MPaを超えると圧縮になった．
51.	Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga and Takahiro Ao : Effect of Partial Nitrogen Gas Pressure on Residual Stress in AlN Films Prepared by Sputtering System, Proceedings of the Fifth International Conference on Residual Stresses, 1048-1053, Linkoeping, Sweden, Jun. 1997. (Summary) 本論文は，BLCガラス上に蒸着したAlN薄膜の結晶配向性および残留応力をX線回折法により調査したものである．膜の作製には2枚のターゲットによるプレーンナマグネトロンスパッタリング法を用い，成膜条件としてはガス圧，基板温度を一定とし，窒素分圧をパラメータとした．窒素分圧が70%以上のときAlN膜はc軸配向となり，窒素分圧が低くなると共に配向特性が悪化した．残留応力は窒素分圧が高いとき圧縮であり，低いときは引張になった．
52.	Takao Hanabusa, Kazuya Kusaka, Masayuki Nishida and Fukuji Inoko : In-situ Thermal Stress Measurement and Observation of Void and Hillock Formation of Aluminum Film, Proceedings of the Fifth International Conference on Residual Stresses, Vol.2, 854-861, Linkoeping, Sweden, Jun. 1997. (Summary) 本論文は，薄膜中に起こるストレスマイグレーションの基本的メカニズムを研究したものである．シリコン基板上に蒸着したアルミニウム膜について保護膜のあるものおよびないものを試料とし，加熱冷却過程における熱応力をその場測定した．加熱過程で，熱応力は初期に線形変化をした後わずかな圧縮応力状態になる．冷却過程では熱応力は引張応力に変化し非線形挙動を示しながら，最終的には大きい引張応力になる．保護膜付きの試料での応力の変化は保護膜なしの膜の変化より大きいことが明らかになった．SEM観察およびAFM観察により，加熱過程で膜表面にヒロックが，冷却過程で膜にボイドができることが明らかになった．膜の応力形成とひロック，ボイドの形成との対応が明らかになった．
53.	Kikuo Tominaga, Takahiro Ao, Yoshifumi Sato, Kazuya Kusaka and Takao Hanabusa : Magnetic field dependence of AlN film properties in DC facing target sputtering, 4th International symposium on sputtering & plasma processes, 129-133, Kanazawa, Jun. 1997.
54.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effects of Substrate Temperature and Successive Annealing on Residual Stress in AlN Films Dposited by Sputtering, Proceedings of the First International Symposium on Thermal Stresses and Related Topics, 599-602, Hamamatsu, Jun. 1995. (Summary) 本論文はガラス基板上に製作したAlN膜の結晶配向性および残留応力挙動について検討した結果の報告である．スパッタリング法で作成したAlN膜はc軸配向性を有しており，通常のX線応力解析法の適用は不可能なので，著者等が新しく提案した応力測定法により残留応力測定した．製膜後の残留応力は1GPa以上の引張であり，基板温度の上昇により大きくなる．また，この残留応力は試料の加熱により基板と膜との熱膨張係数差による熱残留応力挙動に従うことを明らかにした．
55.	Takao Hanabusa, Kazuya Kusaka and Kikuo Tominaga : Residual Stress in Aluminum Nitride Films Deposited on Glass Substrate by Magnetron Sputtering Method, Proceedings of the Fourth International Conference on Residual Stresses, 631-639, Baltimore, Maryland, USA, Jun. 1994. (Summary) ガラス基板上に製作したAlN膜に対する新しいX線残留応力解析法を提案した．スパッタリング法で作成したAlN膜は極めて強いc軸配向性を有し，通常のX線応力解析法の適用は不可能である．低回折角度領域での格子ひずみ測定の可能な側傾法を利用し，c軸に対して傾いた方向に法線をもつ種々の(hkl)面の格子ひずみを測定する新しい解析法を提案した．この方法により，X線応力測定としては極めて不利な条件にあるc軸配向AlN膜の残留応力測定が可能になった．基板の種類と製膜時の基板温度をパラメータとして残留応力を測定した結果，AlN膜には真応力と基板と膜の熱膨張差による熱残留応力が混在し，熱残留応力は試料の加熱により消滅することが明らかになった．
56.	Takao Hanabusa, Kazuya Kusaka, Kikuo Tominaga and Haruo Fujiwara : Dependence of Substrate and Its Temperature on Residual Sress Development in AlN Films Deposited on Glasses by Magnetron Sputtering Method, Proceedings of International Symposium on Nondestructive Testing & Stress-Strain Measurement, 516-523, Tokyo, Oct. 1992. (Summary) マグネトロンスパッタリング法によりガラス基板上に形成したAl膜およびAlN膜の残留応力をX線回折法により調べた．特に，基板の種類および基板温度をパラメータとして，残留応力に対する影響を調べた．基板には熱膨張係数がAlNとほぼ同じものと異なるものを用いた，基板温度は室温から高温までの数段階を設定した．その結果，AlN膜の残留応力は温度依存性が認められ，臨界の基板温度までは引っ張り残留応力が増加する．その傾向は基板とAlN膜の熱膨張係数差により説明できることを確認した．また，臨界の基板温度を超えると残留応力は低下し，微視的残留応力の緩和によるものと推定した．

Proceeding of Domestic Conference:

1.	Matsumoto Akihiko, Kazuya Kusaka and Daisuke Yonekura : X-ray elastic constant measurement of chromium nitride film deposited by AIP method, The 58th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 13-16, Jul. 2024.
2.	Matsumoto Akihiko, Kazuya Kusaka and Daisuke Yonekura : Relationship between droplet density and residual stresses in chromium nitride thin films with uniform thickness, The 57th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 31-34, Jul. 2023.
3.	Maria Moriguchi, Kazuya Kusaka, Hiroyuki Ukida, Junko Kanai and Kenji Terada : A Study of Changes in Self-Evaluation of Ability in Independent Student Project Activities, Research Report of JSET Conferences, Vol.2023, No.1, 69-76, May 2023. (Summary) 徳島大学高等教育研究センター学修支援部門創新教育推進班では，ものづくりを基礎とした学生の主体的なプロジェクト活動を通じて，創造的な能力や実践的な態度，社会性の育成を目指している．それらの能力について，学生自身がどのように認識しているかを確認するため，能力自己評価アンケートを実施している．2022年度に行われたアンケート結果を基に学生の能力の自己評価の変化について分析した結果，プロジェクト活動の経験や外部とのかかわりが自己評価に影響していることが示唆された． (Keyword) 学生プロジェクト / 能力 / self-evaluation
4.	Maria Moriguchi, 亀井克一郎, Kazuya Kusaka, Hiroyuki Ukida, Junko Kanai and Kenji Terada : 学生プロジェクト活動における業務負担とその軽減への考察, 第18回大学教育カンファレンスin徳島発表抄録集, 56-57, Dec. 2022.
5.	Maria Moriguchi, 亀井克一郎, Tomoko Tamaari, Kazuya Kusaka, Hiroyuki Ukida, Junko Kanai and Kenji Terada : コロナ禍 3 年目を迎えた自主的な学生プロジェクト活動の実態とその支援の実践について, 第 19 回ものづくり・創造性教育に関するシンポジウム, 4-6, Dec. 2022.
6.	Maria Moriguchi, 亀井克一郎, Kazuya Kusaka, Hiroyuki Ukida, Junko Kanai, Kenji Terada and Tomoko Tamaari : 徳島大学イノベーションプラザの学生プロジェクト活動への支援とその方法の検討, 第10回イノベーション教育学会年次大会, Nov. 2022.
7.	Morio Kawasaki, Takumi Sakazaki, Kazuya Kusaka and Daisuke Yonekura : Effect of droplets on compressive residual stress in CrN film deposited by AIP method, Proceedings of The 56th Symposium on X-Ray Studies on Mechanical Behaviour of Materials, 68-71, Jul. 2022.
8.	Kazuya Kusaka, Morio Kawasaki, Takumi Sakazaki and Daisuke Yonekura : Relationship between residual stress and droplet density of chromium nitride films with unified film thickness, Proceedings of the 71th JSMS Annual Meetings, May 2022.
9.	Maria Moriguchi, 亀井克一郎, Kazuya Kusaka, Hiroyuki Ukida, Junko Kanai and Kenji Terada : 第 19 回ものづくり・創造性教育に関するシンポジウム, 第 19 回ものづくり・創造性教育に関するシンポジウム講演論文集, 11-14, Feb. 2022.
10.	Kazuya Kusaka, Hiroyuki Ukida, Junko Kanai, Kenji Terada and Maria Moriguchi : 「イノベーション・プロジェクト入門および実践」における活動報告書のルーブリックを用いた評価, 教育シンポジウム2022, Jan. 2022.
11.	Morio Kawasaki, Tsubasa Oka, Kazuya Kusaka and Daisuke Yonekura : Dependence of residual stress and substrate holding position on amount of droplets in chromium nitride thin film prepated by arc ion plating method, Proceedings of The 55th Symposium on X-Ray Studies on Mechanical Behaviour of Materials, 42-45, Oct. 2021.
12.	Morio Kawasaki, Tsubasa Oka, Kazuya Kusaka and Daisuke Yonekura : Relationship between compressive residual stress and surface properties of chromium nitride films deposited by arc ion plating method, 第70期学術講演会論文集, May 2021.
13.	Kazuya Kusaka, Junko Kanai, Masatake Akutagawa, Kei-ichiro Murai, Kenji Terada and Maria Moriguchi : プロジェクトマネジメント基礎におけるルーブリック個人評価の実施と効果, 徳島大学教育シンポジウム2021, Jan. 2021.
14.	Kazuya Kusaka, Toshiki Yatagai and Ryoichi Yokoyama : X-ray elastic constant measurement of c-axis oriented zinc oxide film, 日本材料学会第69期学術講演会論文集, May 2020.
15.	Kazuya Kusaka, Junko Kanai, Masatake Akutagawa, Kei-ichiro Murai, Kenji Terada and Maria Moriguchi : プロジェクトマネジメント基礎におけるルーブリック個人評価の実施と効果, 教育シンポジウム2020, 2020.
16.	森口茉梨亜, Kenji Terada, Kazuya Kusaka, Hiroyuki Ukida, Junko Kanai, and Kazuyoshi Kitaoka : 徳島大学イノベーションプラザにおける学生プロジェクトの活動∼教学IRによる教育の質保証を目指して∼, 大学教育カンファレンス in 徳島, Dec. 2019.
17.	Kazuya Kusaka, Kenta Shirasaka, Daisuke Yonekura and Yuta Tanaka : Effect of droplet amount on residual stress in Cr/CrN multilayered film deposited on Ti alloy substrate by AIP method, The 53rd Symposium on X-Ray Studies on Mechanical Behaviour of Materials, 13-16, Jul. 2019.
18.	Kenta Shirasaka, Kazuya Kusaka, Daisuke Yonekura and Yuta Tanaka : Measurement of residual stress in CrN films and Cr/CrN multilayer with stress gradient deposited on aluminum alloy substrate, The 53rd Symposium on X-Ray Studies on Mechanical Behaviour of Materials, 5-8, Jul. 2019.
19.	Kazuya Kusaka, Kenta Shirasaka, Daisuke Yonekura and Yuta Tanaka : Stress measurement of {211}-oriented Cr/CrN multilayered films, Proceedings of the 68th JSMS Annual Meetings, 33-34, May 2019.
20.	Kenta Shirasaka, Kazuya Kusaka, Daisuke Yonekura and Yuta Tanaka : Measurement of residual stress in CrN films with stress gradient deposited on aluminum alloy substrate, Proceedings of the 68th JSMS Annual Meetings, 31-32, May 2019.
21.	Kenta Shirasaka, Kazuya Kusaka, Daisuke Yonekura and Yuta Tanaka : 二種類の基板上に堆積したCrN単層膜およびCr/CrN多層膜の残留応力評価, 第52回X線材料強度に関するシンポジウム講演論文集, 67-70, Jul. 2018.
22.	Yusuke Kashiwagi and Kazuya Kusaka : ポリイミドフィルム上に堆積した銅薄膜の回折弾性定数の基板温度および膜厚依存性, 日本材料学会第67期学術講演会講演論文集, 197-198, May 2018.
23.	Kenta Shirasaka, Mikiya Fukuda, Kazuya Kusaka, Daisuke Yonekura and Yuta Tanaka : AIP法によりTi合金及びAl合金基板上に堆積させたCrN単層膜及びCr/CrN多層膜の内部応力測定, 日本材料学会第67期学術講演会講演論文集, 199-200, May 2018.
24.	Satoshi Nakai, Yuka Inoue, Kazuya Kusaka, Daisuke Yonekura and 田中勇太 : Cr/CrN多層膜を被覆したチタン合金のエロージョン特性, 日本材料学会第67期学術講演会講演論文集, 180-181, May 2018.
25.	Kazuyoshi Kitaoka, Junko Kanai, Kazuya Kusaka, Satoshi Orita, Kenji Terada and Shoichiro Fujisawa : イノベーション教育のための全学組織「創新教育センター」の設置と今後の展望, イノベーション教育学会第5回年次大会, Nov. 2017.
26.	Junko Kanai, Kazuya Kusaka, Takafumi Inoue, Tomohiro Kubo, Mikito Yasuzawa, Kenji Terada and Shoichiro Fujisawa : 社会人基礎力育成に向けたプロジェクトマネジメント教育の効果, 平成29年電気学会電子・情報・システム部門大会講演論文集, 355-358, Sep. 2017.
27.	Junko Kanai, Emi Morimoto, Takafumi Inoue, Chizuru Sasaki, Kazuyoshi Kitaoka, Kazuya Kusaka, Hiroyuki Ukida, Toshihiro Okamoto, Yutaka Kishimoto, Yoshihiro Deguchi, Tomohiro Kubo, Mikito Yasuzawa, Kenji Terada and Shoichiro Fujisawa : 学生の自己能力評価アンケート調査からみたイノベーション教育の課題, 大学教育カンファレンスin徳島, Dec. 2016.
28.	Kazuya Kusaka, Mai Onishi, Masayuki Tsukagoshi, Mikito Yasuzawa, Nobutake Tamai and Masatake Akutagawa : Approach of practice of planning and designing for solving real problems in the region, 第63回工学教育研究講演会講演論文集, 2A06_1-2, Sep. 2015. (Keyword) 導入教育 / 企画設計 / グループ活動
29.	Kazuya Kusaka and Yuma Yamada : The relationship between hillock formation and initial residual stress of copper thin film with differnt grain size, Proceedings of The 46th Symposium on X-ray Studies on Mechanical Behaviour of Materials, Jul. 2012.
30.	Kazuya Kusaka and Kikuo Tominaga : Residual stress measurement in metal interlayer of metal-ceramics functionally graded thin film, Proceedings of The 45th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 111-114, Jul. 2011.
31.	Kazuya Kusaka, Koji Kusano and Shoichiro Fujisawa : Attempt of practice divided up design and production, 平成22年度工学・工業教育研究講演会講演論文集, 182-183, Aug. 2010. (Keyword) handicraft / group activity / design
32.	Kazuya Kusaka and Kikuo Tominaga : Residual stress measurement in 2-layered aluminum nitride films deposited by two kinds of sputterings with different power supply, Proceedings of The 44th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 105-109, Jul. 2010.
33.	小濱達也, Kazuya Kusaka and Takao Hanabusa : AIP法によって生成したTiN膜の残留応力の熱的特性, 日本材料学会第58期学術講演会, May 2009.
34.	Shyouzo Tsuzuki, Takao Hanabusa and Kazuya Kusaka : 視覚的理解から操作・体得理解へ-4節リンク模型を用いた「機構学」での動機付け-, 平成20年度工学・工業教育研究講演会講演論文集, 38-39, Aug. 2008.
35.	Kazuya Kusaka, Hitoshi Takagi, Daisuke Yonekura, Takuo Nagamachi and Takao Hanabusa : Trial of practice shared in design and production works, 平成20年度工学・工業教育研究講演会講演論文集, 66-67, Aug. 2008. (Keyword) Design subject / Group operation / Communication skill
36.	Mitsuhiko Shinohara, Takao Hanabusa and Kazuya Kusaka : 繰り返し曲げ付加によるCu薄膜の残留応力評価, Proceedings of The 43rd Symposium on X-ray Studies on Mechanical Behaviour of Materials, 92-96, Jul. 2008.
37.	Tatsuya Matsue, Takao Hanabusa, Kazuya Kusaka and Osami Sakata : Residual Stresses in CrN films due to heat treatment, Proceedings of The 43st Symposium on X-ray Studies on Mechanical Behaviour of Materials, 97-101, Jul. 2008.
38.	Hirokazu Isoda, Takao Hanabusa and Kazuya Kusaka : Effect of laser incident angle on residual stress development in laser-peened aluminum alloy, Proceedings of The 43rd Symposium on X-ray Studies on Mechanical Behaviour of Materials, 47-52, Jul. 2008.
39.	Daiki Tadashige, Takao Hanabusa, Kazuya Kusaka and Masayuki Nishida : Measurement of residual stress in aluminum casting with large crystal by X-ray diffraction, Proceedings of The 43st Symposium on X-ray Studies on Mechanical Behaviour of Materials, 1-6, Jul. 2008.
40.	Shyouzo Tsuzuki, Takao Hanabusa, Satoshi Kiriyama and Kazuya Kusaka : プロジェクト活動における教育的効果について, 平成19年度工学・工業教育研究講演会講演論文集, 144-145, Aug. 2007.
41.	Takumi Kakuda, Takao Hanabusa and Kazuya Kusaka : In-situ high temperature observation on the surface of copper films deposited by sputtering, Proceedings of The 42st Symposium on X-ray Studies on Mechanical Behaviour of Materials, 156-158, Jul. 2007.
42.	Kazuya Kusaka, Takao Hanabusa and Tomoyuki Kirimoto : Stress Measurement in Cast Aluminum, Proceedings of The 42st Symposium on X-ray Studies on Mechanical Behaviour of Materials, 93-97, Jul. 2007.
43.	Kazuya Kusaka and Koji Kusano : Trial of energy contest for initial creative subject, 平成18年度工学・工業教育研究講演会講演論文集, 642-643, Jul. 2006. (Keyword) Creative subject / Contest / Presentation evaluation
44.	Tatsuya Matsue, Takao Hanabusa, Yasukazu Ikeuchi, Kazuya Kusaka and Osami Sakata : Alteration of internal stresses in hard coating films by synchrotron radiation due to heat treatment, Proceedings of The 41st Symposium on X-ray Studies on Mechanical Behaviour of Materials, 40-45, Jul. 2006.
45.	Kazuya Kusaka, Kenta Kaneko, Takao Hanabusa and Osami Sakata : In-situ thermal stress measurement in multi-layered aluminum nitride and copper films by synchrotron radiation, Proceedings of The 41st Symposium on X-ray Studies on Mechanical Behaviour of Materials, 13-18, Jul. 2006.
46.	Kenta Kaneko, Kazuya Kusaka, Takao Hanabusa and Osami Sakata : In-situ thermal stress measurement in nano-size copper thin films by synchrotron radiation, Proceedings of The 41st Symposium on X-ray Studies on Mechanical Behaviour of Materials, 7-12, Jul. 2006.
47.	Kazuya Kusaka, Takao Hanabusa and Kazumasa Miki : Effect of Laser Focal Position and Laser Scanning Speed on Residual Stress in Laser Peened Cun Metal, Proceedings of The 40th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 107-112, Sep. 2005.
48.	Satoshi Kiriyama, Kazuya Kusaka, Shingo Kuroiwa, Masanobu Haraguchi and Takao Hanabusa : 学生自主プロジェクト活動実態に関する考察, 平成17年度工学·工業教育研究講演会講演論文集, 200-201, Sep. 2005.
49.	Yasushi Kawasaki, Ikuo Shimizu, Mitsuhiko Hataya, Toshio Matsubara, Atsushi Moriai, Kazuya Kusaka and Takao Hanabusa : Evaluation of characteristics of SPS Sintering Materials by Neutron Diffraction Method, Proceedings of The 40th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 42-47, Sep. 2005.
50.	Satoshi Kiriyama, Kazuya Kusaka and Takao Hanabusa : 創成学習開発センターにおける創造性教育の取り組み, 第66回応用物理学会学術講演会講演予稿集, 332, Sep. 2005.
51.	Hideaki Takai, Takao Hanabusa, Kazuya Kusaka, Tatsuya Matsue and Osami Sakata : TiN薄膜熱応力その場測定, 日本材料学会四国支部第6期総会·学術講演会講演論文集, 45-46, Apr. 2005.
52.	Yoshihiko Saeki, Kazuya Kusaka and Takao Hanabusa : レーザピーニング処理したアルミニウム合金の残留応力分布とその評価, 日本材料学会四国支部第6期総会·学術講演会講演論文集, 43-44, Apr. 2005.
53.	Kenta Kaneko, Kazuya Kusaka and Takao Hanabusa : 放射光を用いたナノサイズアルミニウム薄膜の熱応力その場測定, 日本材料学会四国支部第6期総会·学術講演会講演論文集, 39-40, Apr. 2005.
54.	Yasushi Kawasaki, Mitsuhiko Hataya, Ikuo Shimizu, Toshio Matsubara, Atsushi Moriai, Takao Hanabusa and Kazuya Kusaka : 中性子回折法による金属およびセラミックスのSPS焼結材の特性評価, 日本材料学会四国支部第6期総会·学術講演会講演論文集, 37-38, Apr. 2005.
55.	Kazuhiro Noda, Mitsuhiko Hataya, Takao Hanabusa, Kazuya Kusaka, Koji Oshima, Tomoyuki Ishida, Shoso Shingubara, Tatsuya Matsue and Osami Sakata : Measurement of Electromigration-induced Strain in Fine Aluminum Line, Proceedings of The 39th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 219-223, Sep. 2004.
56.	Takao Hanabusa, Kazuya Kusaka, Shoso Shingubara, Kazuhiro Noda, Tatsuya Matsue and Osami Sakata : Thermal Stress Behavior of Aluminum Nanofilms under Heat Cycling, Proceedings of The 39th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 213-218, Sep. 2004.
57.	Hideaki Takai, Takao Hanabusa, Kazuya Kusaka, Tatsuya Matsue and Osami Sakata : The Residual Stress and Surface Property of Titanium Nitride, Proceedings of The 39th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 208-212, Sep. 2004.
58.	Tatsuya Matsue, Takao Hanabusa, Yasukazu Ikeuchi, Kazuya Kusaka and Osami Sakata : Alteration of Residual Stress in SiO₂/Cu/TiN Films due to Heat Treatment, Proceedings of The 39th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 202-207, Sep. 2004.
59.	Kazuya Kusaka, Takeshi Tanaka and Takao Hanabusa : Effect of Laser Power and Scanning Speed on Residual Stress in Laser-peened Aluminum Alloy Surface, Proceedings of The 39th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 141-146, Sep. 2004.
60.	Mitsuhiko Hataya, Makoto Nakagawa, Toshio Matsubara, Atsushi Moriai, Hiroshi Suzuki, Nobuaki Minakawa, Yukio Morii, Kazuya Kusaka and Takao Hanabusa : Residual Stress Analysis of Metal/Ceramic Functionally Graded Materials, Proceedings of The 39th Symposium on X-ray Studies on Mechanical Behaviour of Materials, 93-97, Sep. 2004.
61.	Kazuya Kusaka, Takao Hanabusa, Shoso Shingubara, Tatsuya Matsue, Osami Sakata and Kazhiro Noda : ナノサイズアルミニウム薄膜の熱応力その場測定, 日本機械学会2004年度年次大会講演論文集, Vol.1, Sep. 2004.
62.	Kazuya Kusaka, Takao Hanabusa, Kazuhiro Noda, Mitsuhiko Hataya, Shoso Shingubara, Tatsuya Matsue and Osami Sakata : 放射光を用いたナノサイズアルミニウム薄膜の熱応力その場測定, LSI配線における原子輸送·応力問題第10回研究会予稿集, 34-35, Jul. 2004.
63.	Kazuya Kusaka, Takeshi Tanaka and Takao Hanabusa : Effect of laser power on residual stress in laser-peened aluminum alloy, 第53期学術講演会講演論文集, 49-50, May 2004.
64.	Hideaki Takai, Kazuya Kusaka, Takao Hanabusa, Tatsuya Matsue and Osami Sakata : ナノサイズ窒化チタン薄膜の残留応力測定および表面特性, 日本材料学会四国支部第5期総会·学術講演会講演論文集, 7-8, Apr. 2004.
65.	Mitsuhiko Hataya, Kazuhiro Noda, Kazuya Kusaka, Kikuo Tominaga, Takao Hanabusa, Tatsuya Matsue and Osami Sakata : ナノサイズCu薄膜の残留応力測定, 日本材料学会四国支部第5期総会·学術講演会講演論文集, 5-6, Apr. 2004.
66.	Mitsuhiko Hataya, Makoto Nakagawa, Toshio Matsubara, Atsushi Moriai, Hiroshi Suzuki, Nobuaki Minakawa, Yukio Morii, Kazuya Kusaka and Takao Hanabusa : 金属/セラミックス系傾斜機能材料の内部残留応力測定, 日本材料学会四国支部第5期総会·学術講演会講演論文集, 1-2, Apr. 2004.
67.	Kazuhiro Noda, Takao Hanabusa, Kazuya Kusaka, Osami Sakata, Toshiki Sato and Tatsuya Matsue : 放射光およびX線を用いたTiN薄膜の残留応力測定および表面観察, 第47回日本学術会議材料研究連合講演会講演論文集, 303-304, Oct. 2003.
68.	Mitsuhiko Hataya, Makoto Nakagawa, Toshio Matsubara, Atsushi Moriai, Yukio Morii, Kazuya Kusaka and Takao Hanabusa : Al-Al₂O₃系焼結複合材料の中性子回折法による内部残留応力分布評価, 第47回日本学術会議材料研究連合講演会講演論文集, 295-296, Oct. 2003.
69.	Kazuya Kusaka, Keitaro Horikawa, Akira Oyama and Hitoshi Takagi : Technique to Evaluate Each Student in Groups, --- A trial for Machine Creation Laboratory ---, 平成15年度工学·工業教育研究講演会講演論文集, 623-624, Sep. 2003.
70.	Hitoshi Takagi, Kazuya Kusaka, Takao Hanabusa and Hiroshi Kawakami : Trial of task inquiring class named "Find Its Root", 平成15年度工学·工業教育研究講演会講演論文集, 417-418, Sep. 2003.
71.	Akira Oyama, Hitoshi Takagi, Kazuya Kusaka and Keitaro Horikawa : Lego Mindstormsを利用した創造的ものづくり教育とその効果, 平成15年度工学·工業教育研究講演会講演論文集, 455-458, Sep. 2003.
72.	Kazuya Kusaka, Keitaro Horikawa, Akira Oyama and Hitoshi Takagi : Evaluation of personal records in a group, 日本機械学会2003年度年次大会講演論文集, Vol.V, 203-204, Aug. 2003.
73.	Hitoshi Takagi, Kazuya Kusaka and Takao Hanabusa : Trial of class on history of technology named "Find Its Root" and its effect, 日本機械学会2003年度年次大会講演論文集, Vol.V, 181-182, Aug. 2003.
74.	Akira Oyama, Hitoshi Takagi, Kazuya Kusaka and Keitaro Horikawa : Effective Practice of Machine Creation Laboratory Using Lego Mindstorms, 日本機械学会2003年度年次大会講演論文集, Vol.V, 201-202, Aug. 2003.
75.	Kazuya Kusaka, Kikuo Tominaga and Takao Hanabusa : GaNスパッタ膜の結晶配向性と内部応力の基盤温度依存性, 平成14年電気関係学会四国支部連合大会講演論文集, 186, Oct. 2002.
76.	Takao Hanabusa, Kazuya Kusaka, Masayuki Nishida and Tatsuya Matsue : Measurement of Crystal Orientation and Residual Stress in TiN Films by Synchrotron Radiation, Proceedings of the 38th symposium on X-ray studies on mechanical behavior of materials, 93-98, Sep. 2002.
77.	Makoto Nishiike, Takao Hanabusa and Kazuya Kusaka : Evaluation of Laser-Peened Aluminum Surface, Proceedings of the 38th symposium on X-ray studies on mechanical behavior of materials, 128-131, Sep. 2002.
78.	Kazuya Kusaka, Noriyoshi Yamauchi, Takao Hanabusa and Kikuo Tominaga : Residual Stress Measurement of RF Sputtered Gallium Nitride Films, Proceedings of the 38th symposium on X-ray studies on mechanical behavior of materials, 41-46, Sep. 2002.
79.	Takao Hanabusa and Kazuya Kusaka : 卒業研究のプレゼンテーション評価, 平成14年度工学·工業教育研究講演会講演論文集, 199-202, Jul. 2002.
80.	Kazuya Kusaka, Akira Oyama, Keitaro Horikawa and Hitoshi Takagi : Lego Mindstormsを使った創成型教育の実施と評価, 平成14年度工学·工業教育研究講演会講演論文集, 371-374, Jul. 2002.
81.	Kazuya Kusaka, Noriyoshi Yamauchi, Takao Hanabusa and Kikuo Tominaga : スパッタリング生成した単結晶ガリウム膜の残留応力測定, 第51期学術講演会講演論文集, 235-236, May 2002.
82.	Makoto Nishiike, Takao Hanabusa and Kazuya Kusaka : レーザーピーニング処理した炭素鋼の残留応力測定, 第51期学術講演会講演論文集, 225-226, May 2002.
83.	Kikuo Tominaga, Takuya Kikuma, Kazuya Kusaka and Takao Hanabusa : ZrO₂膜作製における高速酸素発生とZrターゲット面酸化機構モデル, 第49回応用物理学関係連合講演会, Vol.2, 635, Mar. 2002.
84.	Kikuo Tominaga, 喜久間拓也, Kazuya Kusaka, Takao Hanabusa and Takashi Mukai : プレーナマグネトロンスパッタリング法によるサファイヤ基板上へのGaN膜の作製, 第49回応用物理学関係連合講演会, Vol.2, 597, Mar. 2002.
85.	Kazuya Kusaka, Kouhei Furutani, Takuya Kikuma, Takao Hanabusa and Kikuo Tominaga : Effect of Plasma Protection Net on Crystal Orientation and Residual Stress in Sputtering GaN Films, Proceedings of the 37th symposium on X-ray studies on mechanical behavior of materials, 175-179, Sep. 2001.
86.	Kazuya Kusaka, Daisuke Taniguchi, Takao Hanabusa and Kikuo Tominaga : Crystal Orientation and Residual Stress in AlN Films Deposited by DC and RF Sputtering, Proceedings of the 37th symposium on X-ray studies on mechanical behavior of materials, 170-174, Sep. 2001.
87.	Makoto Nishiike, Takao Hanabusa and Kazuya Kusaka : レーザーピーニング処理したアルミニウム表面の残留応力評価, 第50期学術講演会講演論文集, 405-406, May 2001.
88.	Kazuya Kusaka and Takao Hanabusa : AIP法で作製した窒化クロム膜の優先配向性と残留応力評価, 第50期学術講演会講演論文集, 401-402, May 2001.
89.	Kikuo Tominaga, 喜久間拓也, 古谷公平, Kazuya Kusaka, Takao Hanabusa and Takashi Mukai : プレーナマグネトロンスパッタリング法によるGaN膜の作製, 平成12年電気関係学会四国支部連合大会講演論文集, 188, Oct. 2000.
90.	Kazuya Kusaka, Hironori Mitsumura, Kouhei Furutani, Takao Hanabusa and Shiro Sakai : Residual Stress Measurement of Single Crystal GaN Film, Proceedings of the 36th Symposium on X-ray Studies on Mechanical Behavior of Materials, 291-295, Sep. 2000.
91.	Takao Hanabusa, Tadakazu Moriguchi, Kazuya Kusaka and Tatsuya Matsue : Development of Thick TiN Film on Aluminum Substrate and Its Wear Properties, Proceedings of the 36th symposium on X-ray studies on mechanical behavior of materials, 54-58, Sep. 2000.
92.	Daisuke Taniguchi, Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Sputtering Power on Residual Stress and Crystal Orientation in AlN Films Deposited by RF and DC Sputtering, Proceedings of the 35th symposium on X-ray studies on mechanical behavior of materials, 115-119, Sep. 1999.
93.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Film Thickness on Crystal Orientation and Residual Stress in AlN Film Deposited by DC Sputtering, Proceedings of the 35th symposium on X-ray studies on mechanical behavior of materials, 109-114, Sep. 1999.
94.	Takao Hanabusa, Kazuya Kusaka, Hiroyoshi Hosota and Kikuo Tominaga : Residual Stress Measurement of ZnO Film Deposited by Two Facing Target Sputtering System, Proceedings of the 34th Symposium on X-ray Studies on Mechanical Behavior of Materials, 141-145, Jul. 1998.
95.	Yasuhiro Miki, Tadashi Taniguchi, Kazuya Kusaka, Takao Hanabusa and Eiji Maitani : Mechanical Properties of TiN Films Deposited on Aluminum Substrate by Arc Ion Plating Method, Proceedings of the 34th Symposium on X-ray Studies on Mechanical Behavior of Materials, 49-54, Jul. 1998.
96.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of External Magnetic Field on c-axis Orientation and Residual Stress in AlN Films, Proceedings of the 33th Symposium on X-ray Studies on Mechanical Behavior of Materials, 66-71, Jul. 1997.
97.	Hiroyoshi Hosota, Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Residual Stress Measurement in ZnO Films Deposited by Two Facing Targets Sputtering System, Proceedings of the 33th Symposium on X-ray Studies on Mechanical Behavior of Materials, 61-65, Jul. 1997.
98.	Takao Hanabusa, Kazuya Kusaka and Eiji Hanaki : Influence of Passivating Layer on Thermal Stress Development in Aluminum Film, Proceedings of the 33th Symposium on X-ray Studies on Mechanical Behavior of Materials, 44-49, Jul. 1997.
99.	Kazuya Kusaka, Takao Hanabusa, Kikuo Tominaga and Takahiro Ao : Residual Stress Measurement in AlN Films by Alternating Sputtering System, Proceedings of the 32th Symposium on X-ray Studies on Mechanical Behavior of Materials, 238-243, Jul. 1996.
100.	Takao Hanabusa, Masayuki Nishida and Kazuya Kusaka : X-ray Residual Stress Measurement of Laser-sprayed Layer, Proceedings of the 32th Symposium on X-ray Studies on Mechanical Behavior of Materials, 155-160, Jul. 1996.
101.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Effect of Plasma Prevention Net for Deposition of AlN Films by Magnetron Sputtering Method, Proceedings of the 31th Symposium on X-ray Studies on Mechanical Behavior of Materials, 135-140, Jul. 1995.
102.	Kazuya Kusaka, Eiji Hanaki, Masayuki Nishida, Fukuji Inoko and Takao Hanabusa : Change of Residual Stress for Heat Treatment in Aluminum Films Deposited on Thermal Oxygenated Silicon Wafer, Proceedings of the 31th Symposium on X-ray Studies on Mechanical Behavior of Materials, 129-134, Jul. 1995.
103.	Kazuya Kusaka, Katsuyuki Ohta, Seiichi Nunokawa, Takao Hanabusa and Fukuji Inoko : Al薄膜の残留応力の熱処理による変化, 日本機械学会·材料力学部門講演会論文集, Vol.B, No.940-37, 318-319, Oct. 1994.
104.	Takao Hanabusa and Kazuya Kusaka : {111}配向膜のX線的応力解析, 日本機械学会·材料力学部門講演会論文集, Vol.B, No.940-37, 316-317, Oct. 1994.
105.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Dependence of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System with Unbalanced Target, Proceedings of the 30th Symposium on X-ray Studies on Mechanical Behavior of Materials, 75-80, Jul. 1994.
106.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : プレーナマグネトロンスパッタリング生成したAlN膜の結晶配向性と残留応力の窒素ガス圧依存性, 第43期学術講演会論文集, 151-152, May 1994.
107.	Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga : Influence of Plasma on Crystal Orientation and Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System, Proceedings of the 29th Symposium on X-ray Studies on Mechanical Behavior of Materials, 63-68, Jul. 1993.
108.	Takao Hanabusa, Kikuo Tominaga, Haruo Fujiwara and Kazuya Kusaka : Dependence of Substrate Temperature on Residual Stress in AlN Films Deposited by Sputtering System, Proceedings of the 28th Symposium on X-ray Studies on Mechanical Behavior of Materials, 93-98, Jul. 1992.

Et cetera, Workshop:

1.	Shoichiro Fujisawa, Kazuya Kusaka, Kazuyoshi Kitaoka, Satoshi Orita, Junko Kanai and Kenji Terada : Outline of "Education Center for Innovation" for nurturing innovation human resources active in the world, The Papers of Technical Meeting on "Control", IEE Japan, Vol.CT-18, No.076, 27-30, Mar. 2018. (Summary) In modern society where globalization rapidly progresses, universities are required to develop human resources capable of responding to such changes. In order to solve it, it is urgently necessary to develop human resources capable of creating innovation, establish "Education Center for Innovation" that intensifies and redistributes campus resources related to innovation education with the aim of fostering human resources capable of creating innovation, building a university innovation education system, and strengthening the creation of innovation human resources . (Keyword) Innovative education / Design thinking / social implementation
2.	Junko Kanai, Takafumi Inoue, Kazuya Kusaka, Tomohiro Kubo, Mikito Yasuzawa, Kenji Terada and Shoichiro Fujisawa : 創成学習開発センターが支援するプロジェクトマネジメント基礎による創造性教育, 教育シンポジウム2017, Mar. 2017.
3.	Junko Kanai, Emi Morimoto, Takafumi Inoue, Miki Niwa, Chizuru Sasaki, Kazuya Kusaka, Hiroyuki Ukida, Yutaka Kishimoto, Yoshihiro Deguchi, Tomohiro Kubo, Mikito Yasuzawa, Kenji Terada and Shoichiro Fujisawa : ものづくり教育による大学生の能力向上, 電気学会研究会資料制御研究会, No.CT-16-036, 93-95, Mar. 2016. (Keyword) manufacturing activity / ability
4.	Junko Kanai, Emi Morimoto, Takafumi Inoue, Miki Niwa, Chizuru Sasaki, Kazuya Kusaka, Hiroyuki Ukida, Yutaka Kishimoto, Yoshihiro Deguchi, Tomohiro Kubo, Mikito Yasuzawa, Kenji Terada and Shoichiro Fujisawa : 徳島大学創成学習開発センターが支援する自主プロジェクト演習による創造性教育, 工学教育シンポジウム2016, Mar. 2016.
5.	Kazuya Kusaka, Masachika Kijima, 大西舞, Emi Morimoto, Masayuki Tsukagoshi, Mikito Yasuzawa, Nobutake Tamai, Masatake Akutagawa, Kenji Terada and Shoichiro Fujisawa : 導入科目「プロジェクトマネージメント基礎」における企画設計実習の取り組み, 電気学会研究会資料制御研究会, No.CT-14-87, 25-30, Dec. 2014.
6.	Kazuya Kusaka, Yohei Yamada, 大西舞, Masayuki Tsukagoshi, Mikito Yasuzawa, Masaki GOTO, Emi Morimoto, Masatake Akutagawa, Kenji Terada and Shoichiro Fujisawa : Enfocement and evaluation of the introductory subject "project menagement fundamentals", 電気学会研究会資料制御研究会, Vol.CT-14, No.15, 11-16, Apr. 2014. (Summary) We report about the introductory subject "Project Management Fundamentals". The student will get a basic ability to work with diverse peoples in the community or workplace, through the planning and practice of a project to accomplish the task. In addition, the student will obtain project management skills required to design and implement the project. This year's theme was "the development of new products to eliminate the inconvenience for you". The students worked on the development of new products in a team as a project. We evaluated the individual and team by using the project notes. (Keyword) Introductory subject / Creation subject / Project / project management / Group activity / evaluation
7.	Kazuya Kusaka : 第6回残留応力に関する国際会議(ICRS-6)に出席して, Journal of the Society of Materials Science, Japan, Vol.49, No.11, 1255, Nov. 2000.

Report:

1.	Satoshi Kiriyama, Kazuya Kusaka and Takao Hanabusa : 動きはじめた創成学習―徳島大学創成学習開発センターの活動, 大学教育研究ジャーナル(徳島大学), No.2, 95-106, Tokushima, Mar. 2005. (Tokushima University Institutional Repository) ● Metadata: 82381 (Tokushima University Institutional Repository: 82381)

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

Development of Erosion-Resistant Cr/CrN Multilayer Coating Films with High Crack Growth Retardation Effect (Project/Area Number: 23K03576 )
Development of anti-erosion material using Cr/CrN multilayer coatings (Project/Area Number: 20K04160 )
Deformation constraint by grain boundary observed with microscopic view point (Project/Area Number: 21560095 )
微小領域にレーザピーニング処理したアルミニウム合金の内部応力評価 (Project/Area Number: 17760085 )
What is a controlling factor of the strength of thin films? (Project/Area Number: 17560071 )
In-situ system observation of thermal stress in thin films by in-lab X-ray equipment and synchrotron radiation (Project/Area Number: 14550081 )
スパッタリング窒化物半導体薄膜の作製とX線回折を用いた特性評価 (Project/Area Number: 11750081 )
Internal Stress and Atomic Transportation in Thin Film and Line Structure (Project/Area Number: 10650092 )
Search by Researcher Number (70274256)

Associate Professor : Kusaka, Kazuya

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Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)