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Tokushima UniversityGraduate School of Technology, Industrial and Social SciencesDivision of Science and TechnologyElectrical and Electronic EngineeringMaterial Science and Device
Tokushima UniversityInstitute of Post-LED Photonics
Tokushima UniversityGraduate School of Sciences and Technology for InnovationScience and TechnologyElectrical and Electronic EngineeringMaterial Science and Device
Tokushima UniversityFaculty of Science and TechnologyDepartment of Science and TechnologyElectrical and Electronic EngineeringMaterial Science and Device
Tokushima UniversityGraduate School of Advanced Technology and ScienceSystems Innovation EngineeringElectrical and Electronic EngineeringMaterial and Device Science
Tokushima UniversityFaculty of EngineeringDepartment of Electrical and Electronic EngineeringMaterial Science and Device
Tokushima UniversityResearch ClustersResearch Clusters (Registered)1903005 光センサー機能一体型紫外発光ダイオードの開発
Tokushima UniversityResearch ClustersResearch Clusters (Registered)1903003 メタマテリアルを用いた高感度ガスセンシング技術の開発
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Research

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Field of Study

半導体光デバイス, 光工学

Subject of Study

半導体結晶成長と光デバイス開発 (窒化物, ワイドギャップ半導体, optical device, 薄膜·結晶成長, 物性評価)

Book / Paper

Academic Paper (Judged Full Paper):

1. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Ultra-thin deep ultraviolet perfect absorber using an Al/TiO2/AlN system,
Optics Express, Vol.30, No.24, 44229-44239, 2022.
(Tokushima University Institutional Repository: 117757,   DOI: https://doi.org/10.1364/OE.474847)
2. Kentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, Reiya Aono, Hideki Hirayama, Yuusuke Takashima and Yoshiki Naoi :
Reduction of parasitic reaction in high temperature AlN growth by jet stream gas flow metal organic vapor phase epitaxy,
Scientific Reports, Vol.12, 7662, 2022.
(Tokushima University Institutional Repository: 117388,   DOI: 10.1038/s41598-022-10937-y)
3. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Numerical finite difference time domain calculation for extreme enhancement of magneto optical effect at ultraviolet wavelength using Ni subwavelength grating on SiO2/Ni structure,
Optical Review, Vol.29, No.1, 62-67, 2022.
(Tokushima University Institutional Repository: 116760,   DOI: 10.1007/s10043-021-00711-2)
4. Yuusuke Takashima, Atsuki Sasada, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength,
Proceedings of SPIE, Vol.11926, 1192618-1-1192618-4, 2021.
(Tokushima University Institutional Repository: 116674,   DOI: 10.1117/12.2616175,   Elsevier: Scopus)
5. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Highly reflective visible color filter based on a double layer TiO2 subwavelength structure,
Optical Materials Express, Vol.11, No.8, 2712-2721, 2021.
(Tokushima University Institutional Repository: 116127,   DOI: 10.1364/OME.433431)
6. Kozo Sugimoto, Shigeki Matsuo and Yoshiki Naoi :
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength,
Scientific Reports, Vol.10, 21451, 2020.
(Tokushima University Institutional Repository: 115528,   DOI: 10.1038/s41598-020-78564-z,   Elsevier: Scopus)
7. Yuusuke Takashima, Kohei Moriiwa, Masanobu Haraguchi and Yoshiki Naoi :
Optical detection for magnetic field using Ni-subwavelength grating on SiO2/thin-film Ag/glass structure,
Scientific Reports, Vol.10, 19298, 2020.
(Tokushima University Institutional Repository: 115419,   DOI: 10.1038/s41598-020-74202-w,   PubMed: 33168843)
8. Yua Okano, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Magnetically tunable visible reflectivity utilizing the electron accumulation in indium-tin-oxide waveguide layer with subwavelength grating,
Proceedings of SPIE, Vol.11467, 114671U-1-114671U-7, 2020.
(Tokushima University Institutional Repository: 115147,   DOI: 10.1117/12.2568382,   Elsevier: Scopus)
9. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
GaN-Based High-Contrast Grating for Refractive Index Sensor Operating BlueViolet Wavelength Region,
Sensors, Vol.20, No.16, 4444-1-4444-12, 2020.
(Tokushima University Institutional Repository: 115150,   DOI: 10.3390/s20164444)
10. Yuusuke Takashima, Kouhei Moriiwa, Masanobu Haraguchi and Yoshiki Naoi :
Ni subwavelength grating/SiO2/Ag based optical magnetic field sensor with normal incident geometry,
Proceedings of SPIE, Vol.11089, 11089V-1-11089V-6, 2019.
(Tokushima University Institutional Repository: 113719,   DOI: 10.1117/12.2529017)
11. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Dual-wavelengths filter operating at visible wavelength region using subwavelength grating on waveguide structure,
Optical Review, Vol.26, No.5, 466-471, 2019.
(Tokushima University Institutional Repository: 113814,   DOI: 10.1007/s10043-019-00541-3)
12. Yuusuke Takashima, Keita Kusaba, Masanobu Haraguchi and Yoshiki Naoi :
Highly Sensitive Refractive Index Sensor Using Dual Resonance in Subwavelength Grating/Waveguide With Normally Incident Optical Geometry,
IEEE Sensors Journal, Vol.19, No.15, 6147-6153, 2019.
(Tokushima University Institutional Repository: 113453,   DOI: 10.1109/JSEN.2019.2910585)
13. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Optical magnetic field sensor based on guided mode resonance with Ni subwavelength grating/ waveguide structure,
Proceedings of SPIE, Vol.10928, 109281S-1-109281S-8, 2019.
(Tokushima University Institutional Repository: 113100,   DOI: 10.1117/12.2509490)
14. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Highly sensitive magnetic field sensor with normal-incidence geometry using Ni-based bilayer subwavelength periodic structure operating in visible-wavelength region,
Japanese Journal of Applied Physics, Vol.57, No.8S2, 08PE01-1-08PE01-5, 2018.
(Tokushima University Institutional Repository: 112173,   DOI: 10.7567/JJAP.57.08PE01)
15. Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
Femtosecond laser-assisted thermal annealing of Ni electrode on SiC substrate,
AIP Advances, Vol.8, No.6, 065204-1-065204-5, 2018.
(Tokushima University Institutional Repository: 111814,   DOI: 10.1063/1.5036804,   Elsevier: Scopus)
16. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
High-sensitivity refractive index sensor with normal incident geometry using a subwavelength grating operating near the ultraviolet wavelength,
Sensors and Actuators B: Chemical, Vol.255, No.2, 1711-1715, 2018.
(Tokushima University Institutional Repository: 112172,   DOI: 10.1016/j.snb.2017.08.185)
17. Yuusuke Takashima, Masato Tanabe, Masanobu Haraguchi and Yoshiki Naoi :
Ultraviolet polarizer with a Ge subwavelength grating,
Applied Optics, Vol.56, No.29, 8224-8229, 2017.
(Tokushima University Institutional Repository: 112171,   DOI: 10.1364/AO.56.008224)
18. Takuro Tomita, Manato Deki, Eizo Yanagita, Yota Bando, Yoshiki Naoi, Takahiro Makino and Takeshi Ohshima :
Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity,
Journal of Laser Micro/Nanoengineering, Vol.12, No.2, 72-75, 2017.
(DOI: 10.2961/jlmn.2017.02.0004,   Elsevier: Scopus)
19. Yuusuke Takashima, Masato Tanabe, Masanobu Haraguchi and Yoshiki Naoi :
Theoretical investigation of polarization control in ultraviolet wavelength region using eigenmode within subwavelength grating,
Optical Review, Vol.24, No.1, 80-86, 2017.
(Tokushima University Institutional Repository: 112170,   DOI: 10.1007/s10043-016-0293-8,   Elsevier: Scopus)
20. Yuusuke Takashima, Masato Tanabe, Masanobu Haraguchi and Yoshiki Naoi :
Highly polarized emission from a GaN-based ultraviolet light-emitting diode using a Si-subwavelength grating on a SiO2 underlayer,
Optics Communications, Vol.369, 38-43, 2016.
(Tokushima University Institutional Repository: 112169,   DOI: 10.1016/j.optcom.2016.02.027)
21. Yun Jeong Choi, Yoshiki Naoi and Takuro Tomita :
Self-organization of highly ordered honeycomb buckling patterns in crystalline thin films,
Japanese Journal of Applied Physics, Vol.54, No.10, 105502-1-105502-5, 2015.
(DOI: 10.7567/JJAP.54.105502,   Elsevier: Scopus)
22. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions,
Optical Engineering, Vol.54, No.6, 067112-1-067112-5, 2015.
(Tokushima University Institutional Repository: 112168,   DOI: 10.1117/1.OE.54.6.067112,   Elsevier: Scopus)
23. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
Polarized emission characteristics of UV-LED with subwavelength grating,
Japanese Journal of Applied Physics, Vol.53, No.7, 072101-1-072101-6, 2014.
(Tokushima University Institutional Repository: 112167,   DOI: 10.7567/JJAP.53.072101,   Elsevier: Scopus)
24. Manato Deki, Tomoki Oka, Shodai Takayoshi, Yoshiki Naoi, Takahiro Makino, Takeshi Ohshima and Takuro Tomita :
Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide,
Materials Science Forum, Vol.778-780, 661-664, 2014.
(DOI: 10.4028/www.scientific.net/MSF.778-780.661,   Elsevier: Scopus)
25. Dohyung Kim, Heesub Lee, Kazuya Yamazumi, Yoshiki Naoi and Shiro Sakai :
Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al4C3,
Japanese Journal of Applied Physics, Vol.52, No.8S, 08JG18-1-08JG18-5, 2013.
(DOI: 10.7567/JJAP.52.08JG18,   CiNii: 1572824504398528640)
26. Jin-Ping Ao, Yoshiki Naoi and Yasuo Ohno :
Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure,
Vacuum, Vol.87, No.1, 150-154, 2013.
(DOI: 10.1016/j.vacuum.2012.02.038)
27. Tianya Tan, Mitsuaki Tohno, Masakazu Matsumoto, Yoshiki Naoi and Shiro Sakai :
Electroluminescence orientation in InGaN/GaN LED on nano-patterned sapphire by MOCVD,
Journal of Wuhan University of Technology. Materials Science Edition, Vol.27, No.6, 1137-1138, 2012.
(DOI: 10.1007/s11595-012-0617-x,   Elsevier: Scopus)
28. Jin-Ping Ao, Asato Suzuki, Kouichi Sawada, Satoko Shinkai, Yoshiki Naoi and Yasuo Ohno :
Schottky contacts of refractory metal nitrides on gallium nitride using reactive sputtering,
Vacuum, Vol.84, No.12, 1439-1443, 2010.
(DOI: 10.1016/j.vacuum.2009.12.006)
29. Yoshiki Naoi, Masakazu Matsumot, Tianya Tan, Mitsuaki Tohno, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
GaN-based light emitting diodes with periodic nano-structures on the surface fabricated by nanoimprint lithography technique,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2154-2156, 2010.
(DOI: 10.1002/pssc.200983486)
30. Yuji Nariyuki, Masakazu Matsumot, Takeshi Noda, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2121-2123, 2010.
(DOI: 10.1002/pssc.200983481)
31. Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
GaN surface nanostructure photodetector based on back side incidence,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 1804-1806, 2010.
(DOI: 10.1002/pssc.200983506)
32. Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
Fabrication and Photovoltaic Measurements of Surface Nanostructure of AlGaInN-Based Photodetector,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.48, No.11, 111001-1-111001-5, 2009.
(DOI: 10.1143/JJAP.48.111001,   CiNii: 1571698599705358208)
33. Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate,
Journal of Crystal Growth, Vol.311, No.10, 2847-2849, 2009.
(DOI: 10.1016/j.jcrysgro.2009.01.027)
34. T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.5, No.9, 3066-3068, 2008.
(DOI: 10.1002/pssc.200779205)
35. M Yamamoto, Y Hamazaki, M Tsukihara, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.46, No.14, L323-L325, 2007.
(DOI: 10.1143/JJAP.46.L323,   CiNii: 1573950402990850944)
36. M Tsukihara, K Sumiyoshi, T Okimoto, K Kataoka, S Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition,
Journal of Crystal Growth, Vol.300, No.1, 190-193, 2007.
(DOI: 10.1016/j.jcrysgro.2006.11.011)
37. K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Al0.17Ga0.83N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Vol.46, No.2, 491-495, 2007.
(DOI: 10.1143/JJAP.46.491,   CiNii: 1571417125336111616)
38. Kazuhide Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Shuichi Kawamichi, Tadashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Al0.17Ga0.83N film with Middle Temperature Intermediate Layer Grown on Trenched Sapphire Substrate by MOCVD,
Journal of Crystal Growth, Vol.298, No.SI, 300-304, 2007.
(DOI: 10.1016/j.jcrysgro.2006.10.031)
39. Yoshiki Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, S. M. Lee and M. Koike :
Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2810-2813, 2007.
(DOI: 10.1002/pssc.200674826)
40. F.W. Yan, Yoshiki Naoi, M. Tsukihara, S. Kawamichi, T. Yadani, K. Sumiyoshi and Shiro Sakai :
Diffusion effect-induced InNAs films growth on GaAs(100) substrates by MOCVD,
Physica B : Condensed Matter, Vol.376-377, 595-597, 2006.
(DOI: 10.1016/j.physb.2005.12.150)
41. Takashi Okimoto, Masashi Tsukihara, Kazuhide Sumiyoshi, Ken Kataoka, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.8, L236-L238, 2006.
(DOI: 10.1143/JJAP.45.L236,   CiNii: 1572824503084127872)
42. Fawang Yan, Yoshiki Naoi, Masashi Tsukihara, Takayuki Yadani and Shiro Sakai :
Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition,
Journal of Crystal Growth, Vol.282, No.1-2, 29-35, 2005.
(DOI: 10.1016/j.jcrysgro.2005.04.083)
43. R.J. Choi, S. Kubo, M. Tsukihara, K. Inoue, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Effects of V/III flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.2, No.7, 2149-2152, 2005.
(DOI: 10.1002/pssc.200461442,   Elsevier: Scopus)
44. Fawang Yan, Masashi Tsukihara, Akihiro Nakamura, Takayuki Yadani, Tetsuya Fukumoto, Yoshiki Naoi and Shiro Sakai :
Surface smoothing mechanism of AlN film by initially alternating supply of ammonia,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.43, No.8B, L1057-L1059, 2004.
(DOI: 10.1143/JJAP.43.L1057,   CiNii: 1390001206266378240)
45. Hong-dong Li, Masashi Tsukihara, Yoshiki Naoi, Bae Young Lee and Shiro Sakai :
Investigations of V-shaped Defects and Photoluminescence of Thin GaN-Rich GaNP Layers Grown on a GaN Epilayer by Metalorganic Chemical Vapor Deposition,
Applied Physics Letters, Vol.84, No.11, 1886-1888, 2004.
(DOI: 10.1063/1.1687462)
46. Masashi Tsukihara, Yoshiki Naoi, Hongdong Li, Tomoya Sugahara and Shiro Sakai :
The Influence of a Low Temperature GaNP Buffer on GaN Growth by Metalorganic Chemical Vapor Deposition,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2757-2760, 2003.
(DOI: 10.1002/pssc.200303550)
47. Yoshiki Naoi, Toshihiko Tada, Hongdong Li, Nan Jiang and Shiro Sakai :
Growth and evaluation of GaN with SiN Interlayer by MOCVD,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2077-2081, 2003.
(DOI: 10.1002/pssc.200303442)
48. Jin-Ping Ao, Daigo Kikuta, Naotaka Kubota, Yoshiki Naoi and Yasuo Ohno :
High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors,
IEICE Transactions on Electronics, Vol.E86-C, No.10, 2051-2057, 2003.
(CiNii: 1573950402232322944,   Elsevier: Scopus)
49. Young-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi and Shiro Sakai :
High Efficiency GaN-Based LEDs using Plasma Selective Treatment of p-GaN Surface,
Physica Status Solidi (A) Applications and Materials Science, Vol.200, No.1, 87-90, 2003.
(DOI: 10.1002/pssa.200303253)
50. Jin-Ping Ao, Daigo Kikuta, Naotaka Kubota, Yoshiki Naoi and Yasuo Ohno :
Copper Gate AlGaN/GaN HEMT With Low Gate Leakage Current,
IEEE Electron Device Letters, Vol.24, No.8, 500-502, 2003.
(DOI: 10.1109/LED.2003.815158,   CiNii: 1570009751829218944)
51. Jin-Ping Ao, Naotaka Kubota, Daigo Kikuta, Yoshiki Naoi and Yasuo Ohno :
Thermal Stability Investigation of Copper-Gate AlGaN/GaN High Electron Mobility Transistors,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2376-2379, 2003.
(DOI: 10.1002/pssc.200303350)
52. Masashi Tsukihara, Yoshiki Naoi, Hongdong Li and Shiro Sakai :
Dislocation Reduction in GaN Layer by Introducing GaN-rich GaNP Intermediate Layers,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.42, No.4A, 1514-1516, 2003.
(DOI: 10.1143/JJAP.42.1514,   CiNii: 1390282681232981504,   Elsevier: Scopus)
53. Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, Shiro Sakai and G Collins :
Growth of InAs on GaAs(100) by Low-Pressure Metalorganic Chemical Vapor Deposition Employing in situ Generated Arsine Radicals,
Journal of Crystal Growth, Vol.250, No.3-4, 290-297, 2003.
(DOI: 10.1016/S0022-0248(02)02352-7)
54. Masashi Tsukihara, Yoshiki Naoi, Shiro Sakai and Hong-Dong Li :
GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition,
Applied Physics Letters, Vol.82, No.6, 919-921, 2003.
(DOI: 10.1063/1.1544061,   CiNii: 1573950401501645056)
55. Hongdong Li, Masashi Tsukihara, Yoshiki Naoi and Shiro Sakai :
Dislocation reduction in GaN epilayers grown on a GaNP buffer on sapphire substrate by metalorganic chemical vapor deposition,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.11B, L1332-L1335, 2002.
(DOI: 10.1143/JJAP.41.L1332,   CiNii: 1390282681233585664,   Elsevier: Scopus)
56. Jie Bai, Tao Wang, Yuhuai Liu, Yoshiki Naoi, Hongdong Li and Shiro Sakai :
Influence of pyramidal defects on photoluminescence of Mg-doped AlGaN/GaN superlattice structures,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.41, No.10, 5909-5911, 2002.
(DOI: 10.1143/JJAP.41.5909,   CiNii: 1390001206256518016,   Elsevier: Scopus)
57. Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Hong-Dong Li, Hisao Sato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.10A, L1037-L1039, 2002.
(DOI: 10.1143/JJAP.41.L1037,   CiNii: 1390282681231464576)
58. Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Yuji Izumi, Yves Lacroix, Hong-Dong Li, Jie Bai, Yoshiki Naoi and Shiro Sakai :
High-Performance 348nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.41, No.7A, 4450-4453, 2002.
(DOI: 10.1143/JJAP.41.4450,   CiNii: 1390282681231785472)
59. Hirofumi Yamamoto, Yoshiki Naoi, Yoshio Fujii and Yoshihiro Shintani :
Lateral Overgrowth of Diamond Films on Metal Masked Substrate by Microwave Plasma Chemical Vapor Deposition,
International Journal of Modern Physics B, Vol.16, No.6-7, 841-844, 2002.
(DOI: 10.1142/S0217979202010488,   Elsevier: Scopus)
60. Hirofumi Yamamoto, Yoshiki Naoi and Yoshihiro Shintani :
Growth of Diamond Films on Grooved Si Substrates,
Journal of Crystal Growth, Vol.236, No.1, 176-180, 2002.
(DOI: 10.1016/S0022-0248(01)01912-1)
61. A.P. Young, L.J. Brillson, Yoshiki Naoi and C.W. Tu :
Chemical composition, morphology, and deep level electronic states of GaN(0001) (1x1) surfaces prepared by indium decapping,
Journal of Vacuum Science & Technology B, Vol.B19, No.6, 2063-2066, 2001.
(DOI: 10.1116/1.1412656)
62. Yoshiki Naoi, Yoshihisa Kawakami, T Nakanishi, Yves Lacroix, Yoshihiro Shintani and Shiro Sakai :
Characterization of GaN Films etched using reactive ion etching technique by secondary ion mass spectrometry,
Materials Science in Semiconductor Processing, Vol.4, No.6, 555-558, 2001.
(DOI: 10.1016/S1369-8001(02)00016-1,   Elsevier: Scopus)
63. Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, G J Collins and Shiro Sakai :
Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals,
Journal of Crystal Growth, Vol.222, No.3, 511-517, 2001.
(DOI: 10.1016/S0022-0248(00)00975-1,   Elsevier: Scopus)
64. Shiro Sakai, Tao Wang, Y Morishima and Yoshiki Naoi :
A New Method of Reducing Dislocation Density in GaN Layer Grown on Sapphire Substrate by MOVPE,
Journal of Crystal Growth, Vol.221, No.1, 334-337, 2000.
(DOI: 10.1016/S0022-0248(00)00709-0,   Elsevier: Scopus)
65. Leonard J Brillson, Alexander P Young, T.M. Levin, G.H. Jessen, J. Schafer, Y. Yang, S.H. Xu, H. Cruguel, G.J. Lapeyre, F.A. Ponce, Charles W Tu, Yoshiki Naoi, J.D. McKenzie and C.R. Abernathy :
Localized States at GaN Surfaces, Schottky Barriers, and Quntaum Well,
Materials Science and Engineering B, Vol.B75, No.2-3, 218-223, 2000.
66. Nan Jiang, Susumu Kujime, Hirofumi Yamamoto, Takeshi Inaoka, Yoshiki Naoi, Yoshihiro Shintani, Hiroshi Makita, Akimitsu Hatta and Akio Hiraki :
Electron Microscopic Study on the Initial Stages of (111)-Oriented Diamonds Growth on Pt Substrates,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.39, No.6B, L623-L625, 2000.
67. Alexander P Young, Leonard J Brillson, Yoshiki Naoi and Charles W Tu :
The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN grown on MOCVD GaN/Sapphire Templates,
MRS Internet Journal of Nitride Semiconductor Research, Vol.5S1, No.W11.56, 2000.
68. Leonard J Brillson, M. T. Levin, H. G. Jessen, Alexander P Young, Charles W Tu, Yoshiki Naoi, A. F. Ponce, Y. Yang, J. G. Lapeyre, D. J. MacKenzie and R. C. Abernathy :
Defect Formation Near GaN Surfaces and Interfaces,
Physica B : Condensed Matter, Vol.273-274, 70-74, 1999.
69. Sourindra Mahanty, Maosheng Hao, Tomoya Sugahara, Qhalid RS Fareed, Yoshinori Morishima, Yoshiki Naoi, Tao Wang and Shiro Sakai :
V-shaped Defects in InGaN/GaN Multiquantum Wells,
Materials Letters, Vol.41, No.2, 67-71, 1999.
70. Tohru Tsuruoka, Makoto Kawasaki, Sukekatsu Ushioda, R. Francy, Yoshiki Naoi, Tomoya Sugahara, Shiro Sakai and Yoshihiro Shintani :
Combined HREELS/LEED Study on the Oxidation of GaN Surfaces,
Surface Science, Vol.427-428, 257-261, 1999.
71. Maosheng Hao, Sourindra Mahanty, Tomoya Sugahara, Sadanori Morishima, Yusuke Takenaka, Tao Wang, Satoru Tottori, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Configuration of Dislocations in Lateral Overgrowth GaN Films,
Journal of Applied Physics, Vol.85, No.9, 6497-6501, 1999.
72. Jie Wang, Masaaki Nozaki, Mohamed Lachab, Qhalid RS Fareed, Yasuhiro Ishikawa, Tao Wang, Yoshiki Naoi and Shiro Sakai :
Formation and Optical Properties of InGaN/GaN Nano-structures Grown on Amorphous Si Substrates by MOCVD,
Journal of Crystal Growth, Vol.200, No.1-2, 85-89, 1999.
73. Jie Wang, Masaaki Nozaki, Yasuhiro Ishikawa, Maosheng Hao, Sadanori Morishima, Tao Wang, Yoshiki Naoi and Shiro Sakai :
Fabrication of Nanoscale Structures of InGaN by MOCVD Lateral Overgrowth,
Journal of Crystal Growth, Vol.197, No.1-2, 48-53, 1999.
74. Doo-Hyeb Youn, Mohamed Lachab, Maosheng Hao, Tomoya Sugahara, Hironori Takenaka, Yoshiki Naoi and Shiro Sakai :
Investigation on the p-type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.2A, 631-634, 1999.
75. Tomoya Sugahara, Maosheng Hao, Tao Wang, Daisuke Nakagawa, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Role of Dislocation in InGaN Phase Separation,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.10B, L1195-L1198, 1998.
76. Doo-Hyeb Youn, Maosheng Hao, Yoshiki Naoi, Sourindra Mahanty and Shiro Sakai :
Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.9A, 4667-4671, 1998.
77. Tohru Tsuruoka, Nobuyuki Takahashi, R. Francy, Sukekatsu Ushioda, Yoshiki Naoi, Hisao Sato, Shiro Sakai and Yoshihiro Shintani :
HREELS Analysis of the Vibrational and Electronic Properties of GaN Film on Sapphire(0001) Grown by Metalorganic Chemical Vapor Deposition,
Journal of Crystal Growth, Vol.189-190, 677-681, 1998.
78. Shiro Sakai, T.C. Cheng, T.C. Foxon, Tomoya Sugahara, Yoshiki Naoi and Hiroyuki Naoi :
Growth of InNAs on GaAs(100) Substrates by Moleculer-Beam Epitaxy,
Journal of Crystal Growth, Vol.189-190, 471-475, 1998.
79. Yoshiki Naoi, Keizo Kobatake, Satoshi Kurai, Katsushi Nishino, Hisao Sato, Ken-ichi Yamashita, Masaaki Nozaki, Shiro Sakai and Yoshihiro Shintani :
Characterization of Bulk GaN Grown by Sublimation Technique,
Journal of Crystal Growth, Vol.189-190, 163-166, 1998.
80. Hiroki Uemura, Hirofumi Yamamoto, Takeshi Inaoka, Hiroshi Makita, Yoshiki Naoi and Yoshihiro Shintani :
Temperature Dependence of Crystal Size and Nucleation Density of Diamond Film,
Diamond Films and Technology, Vol.8, No.5, 339-346, 1998.
81. Shiro Sakai, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Satoru Tottori, Maosheng Hao, Koichi Wada and Katsushi Nishino :
Growth of Bulk GaN Sublimation Method,
Materials Science Forum, Vol.264-268, No.PT2, 1107-1110, 1998.
82. Hisao Sato, Tomoya Sugahara, Yoshiki Naoi and Shiro Sakai :
Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.4A, 2013-2015, 1998.
83. Doo-Hyeb Youn, Maosheng Hao, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi and Shiro Sakai :
Ohmic Contact to p-type GaN,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.4A, 1768-1771, 1998.
84. Tomoya Sugahara, Hisao Sato, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Satoru Tottori, Kenji Yamashita, Katsushi Nishino, Katsushi Nishino and Shiro Sakai :
Direct Evidence that Dislocations are Non-radiative Recombination Centers in GaN,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.4A, L398-L400, 1998.
85. Maosheng Hao, Tomoya Sugahara, Hisao Sato, Sadanori Morishima, Yoshiki Naoi, L.T. Romano and Shiro Sakai :
Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.3A, L291-L293, 1998.
86. Hisao Sato, Tomoya Sugahara, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Katsushi Nishino and Shiro Sakai :
Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.2, 621-631, 1998.
87. H. Uemura, A. Mizoguchi, T. Hanabusa, K. Takeda, Takeshi Inaoka, Hiroshi Makita, Yoshiki Naoi and Yoshihiro Shintani :
Growth Conditions of Highly Oriented Diamond on Pt Substrates,
Diamond Films and Technology, Vol.7, No.5-6, 293-296, 1997.
88. Shiro Sakai, Satoshi Kurai, Katsushi Nishino, K Wada, Hisao Sato and Yoshiki Naoi :
Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD,
Material Research Society Symposium Proc., Vol.449, 15-22, 1997.
89. Hisao Sato, Yoshiki Naoi and Shiro Sakai :
Structural analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate grown by MOCVD,
Material Research Society Symposium Proc., Vol.449, 441-446, 1997.
90. Hisao Sato, Yoshiki Naoi and Shiro Sakai :
X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.36, No.4A, 2018-2021, 1997.
91. Hisao Sato, Mihir Ranjan Sarkar, Yoshiki Naoi and Shiro Sakai :
XPS Measurement of Valence Band Discontinuity at GaP/GaN Heterostructures,
Solid State Electronics, Vol.41, No.2, 205-207, 1997.
92. Hiroyuki Naoi, Yoshiki Naoi and Shiro Sakai :
MOCVD Growth of InAsN for Infrared Applications,
Solid State Electronics, Vol.41, No.2, 319-321, 1997.
93. Tatsuya Okada, Satoshi Kurai, Yoshiki Naoi, Katsushi Nishino, Fukuji Inoko and Shiro Sakai :
Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.10, 1318-1320, 1996.
94. Satoshi Kurai, Toshimitsu Abe, Yoshiki Naoi and Shiro Sakai :
Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by MOCVD,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.35, No.3, 1637-1640, 1996.
95. Tao Yang, Yoshiki Naoi, Hiroyuki Naoi and Shiro Sakai :
X-ray Photoelectron Spectroscopy of Zinc Blend InN and Valence-Band Discontinuity in the Heterojunction InN/GaAs,
Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes, 504-505, 1996.
96. Satoshi Kurai, Yoshiki Naoi, Toshimitsu Abe, Susumu Ohmi and Shiro Sakai :
Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.1B, 77-79, 1996.
97. Yoshiki Naoi, Satoshi Kurai, Shiro Sakai, Tao Yang and Yoshihiro Shintani :
Stress Distribution and Dislocation Dynamics in GaAs grown on Si by MOCVD,
Journal of Crystal Growth, Vol.145, No.1-4, 321-325, 1994.
98. Yoshiki Naoi, Kimihiko Ito, Yoichi Uehara, Sukekatsu Ushioda and Yoshitada Murata :
Very High Resolution Photoelectron Spectra of NEA-GaAs,
Surface Science, Vol.283, No.1-3, 457-461, 1993.
99. Yuji Hirao, Yoshiki Naoi, Yoshinobu Nagano and Masuo Fukui :
Light Emission Characteristics and Surface Roughness of Au/AlOx/Al Tunnel Junction,
Journal of the Physical Society of Japan, Vol.60, No.12, 4366-4373, 1991.
100. Yoshiki Naoi and Masuo Fukui :
Intensity of Surface-Plasmon Polariton Energy Emitted into the Air Side in an Air/Ag-film/Prism Configuration,
Physical Review B, Condensed Matter and Materials Physics, Vol.42, No.8, 5009-5012, 1990.
101. Yoshiki Naoi and Masuo Fukui :
Evaluation of Surface Roughness Parameters of Metal Films by Light Scattering Technique,
Journal of the Physical Society of Japan, Vol.58, No.12, 4511-4516, 1989.
(DOI: 10.1143/JPSJ.58.4511,   CiNii: 1390001204179165312,   Elsevier: Scopus)

Proceeding of International Conference:

1. Atsushi Tomita, Shota Tsuda, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrate,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
2. Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
3. Takumi Miyagawa, Atsushi Tomita, Shota Tsuda, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
4. Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima and Yoshiki Naoi :
The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
5. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Ultraviolet violet applications utilizing high refractive index subwavelength structure with ultra-thin thickness,
The 12th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2022), 1A8, Online, Jul. 2022.
6. Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
The improvement of crystal orientation in AlN with controlled inversion domain,
Photonics West 2022, 12001-67, San Francisco, Jan. 2022.
7. Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Threshold temperature in annihilation radius of dislocation for AlN,
Photonics West 2022, 12001-66, San Francisco, Jan. 2022.
8. Kentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, Reiya Aono, Hideki Hirayama, Yuusuke Takashima and Yoshiki Naoi :
The reduction of adduct formation during high-temperature growth in AlN by jet gas stream metalorganic vapor phase epitaxy,
Photonics West 2022, 12001-6, San Francisco, Jan. 2022.
9. Masanobu Haraguchi, Shun Kamada, Toshihiro Okamoto, Kenzo Yamaguchi, Yuusuke Takashima and Yoshiki Naoi :
Plasmonic sensors for high density optical circuits,
International Meet & Expo on Laser, Optics and Photonics (OPTICSMEET 2021), 1013, Online, Nov. 2021.
10. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
High refractive index contrast meta-surfaces for sensing and emitting devices,
The 11th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2021), 1A3, Online, Jul. 2021.
11. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Theoretical investigation of tunable wavelength filter with TiO2-based bi-layer subwavelength grating,
12th International Conference on Optics-photonics Design & Fabrication, 02PS2-10, Online, Jun. 2021.
12. Yuusuke Takashima, Sasada Atsuki, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength,
The 8th Optical Manipulation and Structured Materials Conference, OMC-P-02, Online, Apr. 2021.
13. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
High refractive index contrast meta-structures for GaN-based and sensing applications operating at deep ultraviolet to visible wavelength,
13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 08pD07O, Online, Mar. 2021.
14. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Significant enhancement of magneto-optical effect at ultraviolet wavelength using Nisubwavelength grating on SiO2/Ni structure,
30th International Symposium on Imaging, Sensing, and Optical Memory (ISOM'20), We-B-03, Online, Dec. 2020.
15. Yua Okano, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Magnetically tunable visible reflectivity utilizing the electron accumulation in indium-tin-oxide waveguide layer with subwavelength grating,
SPIE Optics + Photonics 2020 DIgital Forum, 11467-64, DIgital Forum, Aug. 2020.
(DOI: 10.1117/12.2568382,   Elsevier: Scopus)
16. Yuusuke Takashima, Kohei Moriiwa, Masanobu Haraguchi and Yoshiki Naoi :
Ni subwavelength grating/SiO2/Ag based optical magnetic field sensor with normal incident geometry,
SPIE Optics + Photonics 2019, 11089-67, San Diego, Aug. 2019.
(DOI: 10.1117/12.2529017,   Elsevier: Scopus)
17. Takuro Tomita, Hiroki Kawakami and Yoshiki Naoi :
Femtosecond laser irradiation aided low-temperature thermal anneal of Ni electrode on SiC,
The 8th International Congress on Laser Advanced Materials Processing, We2-L8, Hiroshima, May 2019.
18. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Optical magnetic field sensor based on guided mode resonance with Ni subwavelength grating/ waveguide structure,
SPIE Photonics West 2019, 10928-64, San Francisco, Feb. 2019.
(DOI: 10.1117/12.2509490,   Elsevier: Scopus)
19. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Dual-wavelengths Filter Operating at Visible Wavelength Region using Subwavelength Grating on Waveguide Structure,
11th International Conference on Optics-photonics Design and Fabrication, 28PSa-24, Hiroshima, Nov. 2018.
20. Hiroyuki Katayama, Yoshiki Naoi, Tatsuya Okada, Yasuhiro Tanaka and Takuro Tomita :
Study of ohmic contact electrode on p-GaN using moderate crystal damage effect induced by femtosecond laser irradiation technique,
International Workshop on Nitride Semiconductors 2018, ThP-ED-6, Kanazawa, Nov. 2018.
21. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Guided mode resonance based magnetic field sensor including Ni nano-grating,
2018 Joint Symposia on Optics, 31aCJ5, Tokyo, Oct. 2018.
22. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Refractive Index Sensor Using Subwavelength Grating on Waveguide with Normal Incident Configuration,
The 23rd Microoptics Conference, P-18, Taipei, Oct. 2018.
23. Hiroyuki Katayama, Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
Femtosecond laser irradiation for the low contact resistance electrode fabrication on p-type gallium nitride,
19th International Symposium on Laser Precision Microfabrication (LPM 2018), 57, Edinburgh, Jun. 2018.
24. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Magnetic field sensing by bi-layer Ni-based subwavelength periodic structure operating visible wavelength region,
The 22nd Microoptics Conference, 256-257, Tokyo, Nov. 2017.
(DOI: 10.23919/MOC.2017.8244583,   Elsevier: Scopus)
25. Yu Okamoto, Yuusuke Takashima and Yoshiki Naoi :
Characterization of polarized ultraviolet light emitting diode by using subwavelength grating electrode,
International Workshop on UV Materials and Devices 2017, We-18, Fukuoka, Nov. 2017.
26. Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
Formation of Ni ohmic electrode on SiC by femtosecond laser irradiation associated with thermal annealing,
International Workshop on UV Materials and Devices 2017, We-P5, Fukuoka, Nov. 2017.
27. Hiroyuki Katayama, Yuki Yamasaki, Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
Annealing of Ni/Au electrode on p-GaN by femtosecond laser irradiation,
International Workshop on UV Materials and Devices 2017, We-P3, Fukuoka, Nov. 2017.
28. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Normal incident type detection of the refractive index using subwavelength grating at violet wavelength,
The 24th Congress of the International Comission for Optics, Th1G-07, Tokyo, Aug. 2017.
29. Yuusuke Takashima, Masato Tanabe and Yoshiki Naoi :
Highly polarized ultraviolet light control using Ge subwavelength grating,
The 2016 Asian Conference on Nanoscience and Nanotechnology, 1P-011, Sapporo, Oct. 2016.
30. Yuusuke Takashima, Masato Tanabe, Masanobu Haraguchi and Yoshiki Naoi :
Theoretical investigation for the polarization in control in UV wavelength region by using eigen mode within subwavelength grating,
10th International Conference on Optics-photonics Design and Fabrication, 1S2-08, Weingarten, Mar. 2016.
31. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
Improvement of Polarization Characteristics of UV-LED by Using Sub-Wavelength Grating with Low Index Underlayer,
7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, B1-O-11, Nagoya, Mar. 2015.
32. Eizo Yanagita, Manato Deki, Yoshiki Naoi, Takahiro Makino, Takeshi Ohshima and Takuro Tomita :
Shallow impurity levels in femtosecond laser modified areas on semi insulating 6H-SiC,
9th International Conference on Photo-Excited Processes and Applications, 111, Matsue, Sep. 2014.
33. Ryo Shimizu, Yuusuke Takashima and Yoshiki Naoi :
Polarized Light Emission from Blue-LED with SiO2 Subwavelength Grating,
6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 06aP40, Nagoya, Mar. 2014.
34. Shodai Takayoshi, Manato Deki, Yoshiki Naoi, Takahiro Makino, Takeshi Ohshima and Takuro Tomita :
Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide,
The International Conference on Silicon CArbide and Related Materials, Mo-P-29, Miyazaki, Sep. 2013.
35. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
Optical characteristics of UV-LED with subwavelength grating,
The 18th Microoptics Conference, H62, Tokyo, Sep. 2013.
36. Shigeki Matsuo, Keiji Oda and Yoshiki Naoi :
Three-Dimensional Micro Modification and Selective Etching of Crystalline Silicon Using 1.56-m,
The 10th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2013), Kyoto, Jul. 2013.
37. Yuusuke Takashima, Ryo Shimizu and Yoshiki Naoi :
Fabrication of subwavelength grating with high aspect ratio on GaN LED,
5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, P3083B, Nagoya, Jan. 2013.
38. Dohyung Kim, Heesub Lee, Kazuya Yamazumi, Yoshiki Naoi and Shiro Sakai :
Fabrication of C-doped p-AlGaInN LED by the insertion of Al4C3,
International Workshop on Nitride Semiconductor 2012, TuP-OD-1, Sapporo, Oct. 2012.
39. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Theoritical analysis for lineraly polarized emission in UV-LED with subwavelength grating structure,
International Workshop on Nitride Semiconductor 2012, MoP-OD-41, Sapporo, Oct. 2012.
40. Yun-Jeong Choi, Takunari Fujimoto, Fumiya Horie, Yoshiki Naoi and Shiro Sakai :
Growth of Diamond like Carbon Film with Phosphorus Incorporation Using CVD Technique,
The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, FrA2-2, Busan, Korea, May 2012.
41. Dohyung Kim, Fumiya Horie, Yuya Ohnishi, Yoshiki Naoi and Shiro Sakai :
Characteristics of Si and P-doped Al4C3 by Metalorganic Vapor Phase Epitaxy,
The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, TuP-71, Busan, May 2012.
42. Jin-Ping Ao, Yoshiki Naoi and Yasuo Ohno :
Thermally Stable TiN Schottky Contact on AlGaN/GaN Heterostructure,
The 11th International Symposium on Sputtering & Plasma Processes, Kyoto, Jul. 2011.
43. Y. Yoshida, K. Hara, Yoshiki Naoi and Shiro Sakai :
MOCVD-GaN growth on separated GaN from sapphire using Tantalium,
Asia-Pacific Workshop on Widegap Semiconductors, No.We-P47, 321-322, Toba( Mie, Japan), May 2011.
44. Fumiya Horie, Yoshiki Naoi and Shiro Sakai :
High Temperature Growth of AlxCy by Chemical Vapor Deposition,
The 16th International Conference on Crystal Growth(ICCG-16), Beijing, Aug. 2010.
45. Yoshiki Naoi and Yoshifumi Nishio :
Current Challenges of the Double Degree Master Program in Electrical and Electronic Engineering,
Proceedings of the Fifth International Symposium on the Development of the Global Double Degree Program (GDDP), 15, Tokushima, Aug. 2010.
46. Katsushi Nishino, Yuusuke Sawai, Yuji Nariyuki, Takeshi Noda, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
TEM Observation of Re-Grown GaN on Nano-Patterned GaN Template,
The 37th International Symposium on Compound Semiconductors, FrP77, Takamatsu, Jun. 2010.
47. Jing Zhang, Takumi Taoka, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
Front and Back Side Illumination of a Nano-Structured AlGaInN Photodetector,
2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, PB064C, Nagoya, Mar. 2010.
48. Kohei Hara, Yoshiki Naoi and Shiro Sakai :
Ta-etching of GaN by the Metalorganic Chemical Vapor Deposition-re-growth of GaN,
2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, PB055B, Nagoya, Mar. 2010.
49. Koji Kawasaki, Seiji Kitamura, Yoshiki Naoi and Shiro Sakai :
Growth of SiGeC Thin Film on Si Substrate by Metal Organic Chemical Vaoir Deposition,
Fifth International Workshop on NEW GROUP IV SEMICONDUCTOR NANOELECTRONICS, P-09, Sendai, Jan. 2010.
50. Yoshiki Naoi, Mitsuaki Tohno, Tianya Tan, Masakazu Matsmoto, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
GaN-bsed Light Emitting Diodes with Periodic Nano-structues on the Surface Fabricated by Nanoimprint Lithography Technique,
The 8th International Conference on Nitride Semiconductors, ThP106, Cheju, Oct. 2009.
51. Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
GaN Surface Nanostructure Photodetector Based on Back Side Incidence,
The 8th International Conference on Nitride Semiconductors, TP145, Cheju, Oct. 2009.
52. Yuji Nariyuki, Masakazu Matsmoto, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
Evaluation and Re-growth of GaN on Nano-patterned GaN on a Sapphire Substrate,
The 8th International Conference on Nitride Semiconductors, TP113, Cheju, Oct. 2009.
53. Takesi Noda, Yoshiki Naoi and Shiro Sakai :
Crack Reduction of AlGaN on GaN/sapphire by Metalorganic Chemical Vapor Deposition,
The 8th International Conference on Nitride Semiconductors, MP14, Cheju, Oct. 2009.
54. Kohei Hara, Yoshiki Naoi and Shiro Sakai :
GaN Re-growth Using Ta Mask by Metalorganic Chemical Vapor Deposition,
The 8th International Conference on Nitride Semiconductors, MP9, Cheju, Oct. 2009.
55. Jing Zang, S. Okuno, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
The surface nanostructure photo-voltaic property of GaN-based photodetector,
Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009), MO3-7, Zhangjiajie, May 2009.
56. Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate,
Second International Symposium on Growth of III-Nitrides, MO-44, Izu, Jul. 2008.
57. M Tohno, T Okimoto, Yoshiki Naoi, Katsushi Nishino, Shiro Sakai, T Kusuura, A Mitra, S Nouda, M Kimura, S Kawano and Y Muramoto :
GaN-LED's on nano-etched sapphire substrate by metal organic chemical vapor deposition,
The first International conference on White Light-Emitting Diodes(LEDs) and Solid State Lighting (SSL), Tokyo, Nov. 2007.
58. T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition,
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Oct. 2007.
59. K. Ikeda, R. Matsuoka, T. Hama, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, M. Koike and S.M. Lee :
An a-GaN and an a-InGaN on r-Sapphire by Relatively High Temperature Metal organic Chemical Vapor Deposition,
The 3rd Asia-Pacific Workshop on Widegap Semiconductors, Jeonju, Mar. 2007.
60. Yoshiki Naoi, K. Ikeda, T. Hama, R.J. Choi, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee :
Investigation of InGaN films on a-plane GaN grown by metal organic chemical vapor deposition technique,
International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
61. Yoshiki Naoi, K. Ono, K. Ikeda, R.J. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee :
Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate,
International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
62. M. Tsukihara, K. Sumiyoshi, T. Okimoto, K. Kataoka, S. Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition,
First International Symposium on Growth of III-Nitrides, Linkoping, Jun. 2006.
63. K. Ikeda, R.J. Choi, T. Fukumoto, K. Ono, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Visible light emitting diode using a-plane GaN on r-sapphire substrate with an InAlN buffer layer and a high temperature atomic layer epitaxy,
13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
64. K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Al0.17Ga0.83N film with middle temperature intermediate layer grown on trenched sapphire substrate by MOCVD,
13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
65. R.J. Choi, Shiro Sakai, Yoshiki Naoi, Katsushi Nishino, M. Koike and S.M. Lee :
Efficient non-polar a-plane light-emitting-diodes grown using AlInNbuffer and intermediate layer,
6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, May 2006.
66. Y Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Kiyoshi Okimoto, Shuichi Kawamichi, Yoshiki Naoi and Shiro Sakai :
High-quality AlGaN film grown on the patterned sapphire substrate using a low-temperature intermediate layer by MOCVD,
International COE Workshop on Nano Processes and Devices, and Their Applications, 75-76, Nagoya University, Dec. 2005.
67. Yoshiki Naoi, Akihiro Nakamura, Kodai Ono, Hisao Sato, H Yamamoto, M Mikura, Suguru Nouda and Shiro Sakai :
Impurity induced disordering of p-type AlGaN-GaN Superlat-tice Structures,
6th International Conference on Nitride Semiconductors, Th-P-023, Bremen, Aug. 2005.
68. Fawang Yan, Yoshiki Naoi, Masashi Tsukihara, Shuichi Kawamichi, Takayuki Yadani and Shiro Sakai :
Diffusion Effect Induced InAsN Films Growth on GaAs(100) Substrates by MOCVD,
The 23rd International Conference on Defects in Semiconductors (ICDS-23), TuP.79, Higashiura, Jul. 2005.
69. Yoshiki Naoi, Hisao Sato, Hiroshi Yamamoto, Kodai Ono, Akihiro Nakamura, Masahiro Kimura, Suguru Nouda and Shiro Sakai :
Growth and fabrication of AlGaInN-based UV-LEDs using SiN nano-mask,
Proceedings of SPIE, Vol.5722, 417-422, San Jose, Apr. 2005.
(DOI: 10.1117/12.601958,   Elsevier: Scopus)
70. Masashi Tsukihara, Yoshiki Naoi, Hongdong Li, Tomoya Sugahara and Shiro Sakai :
Cathodeluminescence and TEM Study of GaN Films Grown with GaNP Buffer Layer by MOCVD,
5th International Conference on Nitride Semiconductors, Nara, May 2003.
71. Young-Bae Lee, Ryohei Takaki, Hisao Sato, Jin-Ping Ao, Yu-Huai Liu, Hong-dong Li, Yoshiki Naoi and Shiro Sakai :
High Efficiency GaN Light-Emitting Diode with High Resistance P-Pad Region Using Plasma Surface Treatment,
5th International Conference on Nitride Semiconductors, Nara, May 2003.
72. Masashi Tsukihara, Yoshiki Naoi, Yukio Ihara and Shiro Sakai :
XPS Measurement of InNAs,
5th International Conference on Nitride Semiconductors, Nara, May 2003.
73. Jin-Ping Ao, Naotaka Kubota, Daogo Kikuta, Yoshiki Naoi and Yasuo Ohno :
Thermal Stability Investigation on Copper Gate AlGaN/GaN High Electron Mobility Transistors,
Abstracts of the 5th International Conference on Nitride semiconductors, Nara, May 2003.
74. Jin-Ping Ao, Naotaka Kubota, Hong-Xing Wang, Yu-Huai Liu, Yoshiki Naoi, Daigo Kikuta, Shiro Sakai and Yasuo Ohno :
Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate,
Proceeding of First Asia-Pacific Workshop on Widegap Semiconductors, 258-259, Awajishima, Mar. 2003.
75. Jin-Ping Ao, Daigo Kikuta, Yoshiki Naoi and Yasuo Ohno :
High Temperature Stability of Cu-Gate AlGaN/GaN HEMT,
Proceedings of the Topical Workshop on Heterostructure Microelectronics 2003, 64-65, Naha, Jan. 2003.
76. Hirofumi Yamamoto, Yoshiki Naoi, S Shinjo, K Noami, Naotaka Kubota, Takeshi Inaoka and Yoshihiro Shintani :
Surface Orientation Effect of Diamond Growth on Platinum Substrate,
8th International Conference New Diamond Science and Technology, Melbourne, Jul. 2002.
77. Yoshiki Naoi, S. Wakimoto, H. Yamamoto, Nan Jiang and Yoshihiro Shintani :
X-ray diffraction study of diamond grown on platinum foil substrate by microwave plasma chemical vapor deposition,
Proceeding of the Second International Conference on Advanced Materials Development and Application, 694-697, Tokushima, Nov. 1999.
78. Nan Jiang, I. Ota, Susumu Kujime, Takeshi Inaoka, Yoshiki Naoi and Yoshihiro Shintani :
Growth of diamondlike carbon by microwave-plasma-enhanced chemical-vapor-deposition method,
Proceeding of the Second International Conference on Advanced Materials Development and Application, 698-701, Tokushima, Nov. 1999.
79. Nan Jiang, Susumu Kujime, T Tokuyama, Takeshi Inaoka, Yoshiki Naoi and Yoshihiro Shintani :
Structural analysis of chemical-vapor-deposited diamond films on Pt substrates by transmission electron microscopy,
Proceeding of the 5th International Conference on Application of Diamond Films and Related Materials, 426-430, Tsukuba, Aug. 1999.
80. Tomoya Sugahara, Tao Wang, Maosheng Hao, Daisuke Nakagawa, Yoshiki Naoi and Shiro Sakai :
Phase Separation Mechanism around Dislocation in an InGaN/GaN Quantum Well Structure,
Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, Vol.xxvi+892, 645-650, Nara, Jan. 1999.
81. Maosheng Hao, Sourindra Mahanty, Y Morishima, Hironori Takenaka, Jie Wang, Satoru Tottori, Masaaki Nozaki, Yasuhiro Ishikawa, Tomoya Sugahara, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Stacking Fault and Its Effect on the GaN Epitaxial Growth,
Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, Vol.xxvi+892, 675-680, Nara, Jan. 1999.
82. Marek Osinski, P.G. Eliseev, P. Perlin, Jinhyun Lee, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi and Shiro Sakai :
Anomalous Temperature Behaviour and Band Tailing in InGaN/GaN Heterostructures Grown on Sapphire by MOCVD,
Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition., Vol.6, 276-277, Oct. 1998.
83. Maosheng Hao, Tomoya Sugahara, Satoru Tottori, Masaaki Nozaki, Satoshi Kurai, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Correlation between Dislocations and Luminescence in GaN,
Proceedings of SPIE, Vol.3419, 138-145, Taipei, Jul. 1998.

Proceeding of Domestic Conference:

1. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Enhancement of Polar Kerr Magneto-Optical Effect in wide wavelength region using TiO2/Fe/Ag multilayer system,
第83回応用物理学会春季学術講演会 JSAP-Optica-SPP Joint Symposia 2022, 20p-C304-12, Sep. 2022.
2. 富田 敦之, 津田 翔太, Takumi Miyagawa, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
低オフ角サファイヤ基板を用いた高温AIN成長におけるV/Ⅲ比依存性,
第69回応用物理学会春季学術講演会, 25a-E203-3, Mar. 2022.
3. 宮川 拓己, 津田 翔太, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
高温有機金属気相成長法におけるAlNの特異的なステップバンチング,
第69回応用物理学会春季学術講演会, 25a-E203-2, Mar. 2022.
4. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
高屈折率を有するTiO2極薄膜を用いた深紫外光吸収体,
第69回応用物理学会春季学術講演会, 24a-E303-9, Mar. 2022.
5. 松尾 繁樹, 杉本 幸大造 and Yoshiki Naoi :
1光子吸収波長のサブナノ秒レーザーを用いたシリコン基板内部における回折格子の作製,
レーザー学会学術講演会第42回年次大会, D03-12p-IV-01, Jan. 2022.
6. Atsushi Tomita, Shota Tsuda, Takumi Miyagawa, Yuusuke Takashima, Yoshiki Naoi, 平山 秀樹 and Kentaro Nagamatsu :
気相反応を制御したMOVPEにおけるAlNのV/III比依存性,
第50回日本結晶成長学会, Oct. 2021.
7. Atsushi Tomita, 津田 翔太, 宮川 拓己, Yuusuke Takashima, Yoshiki Naoi, 平山 秀樹 and Kentaro Nagamatsu :
気相反応を抑制したMOVPEにおけるAlNのV/Ⅲ比依存性,
第50回結晶成長国内会議(JCCG-50), 27p-A12, Oct. 2021.
8. Yuusuke Takashima, Atsuki Sasada, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
AlNサブ波長回折格子を用いた深紫外ミラーの広帯域化,
第82回応用物理学会秋季学術講演会, 13a-N324-3, Sep. 2021.
9. 津田 翔太, 宮川 拓己, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
インバージョンドメインの抑制による高品質AlN成長手法の確立,
第82回応用物理学会秋季学術講演会, 13p-N101-10, Sep. 2021.
10. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
光吸収を持つ導波路構造を利用した屈折率検出の高感度化,
第82回応用物理学会秋季学術講演会, 11p-N205-11, Sep. 2021.
11. Shota Tsuda, Takumi Miyagawa, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
極性制御による高品質AlN成長手法の確立,
応用物理学会中四国支部若手研究会, Aug. 2021.
12. Atsushi Tomita, Shota Tsuda, Reiya Aono, Takumi Miyagawa, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
気相反応を抑制した高温MOVPEにおけるV/III比依存性,
応用物理学会中四国支部若手研究会, Aug. 2021.
13. 宮川 拓己, 津田 翔太, 青野 零弥, 揚田 侑哉, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
AlNの高流速成長における成長メカニズム,
第68回応用物理学会春季学術講演会, 19p-Z27-13, Mar. 2021.
14. 津田 翔太, 青野 零弥, 揚田 侑哉, 宮川 拓己, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
AlNテンプレート上高温AlN結晶成長,
第68回応用物理学会春季学術講演会, 19p-Z27-3, Mar. 2021.
15. Kentaro Nagamatsu, 津田 翔太, 青野 零弥, 宮川 拓己, 揚田 侑哉, 平山 秀樹, Yuusuke Takashima and Yoshiki Naoi :
高温有機金属気相成長装法におけるAlN成長の気相反応抑制,
第68回応用物理学会春季学術講演会, 19p-Z27-14, Mar. 2021.
16. 中津 卓巳, Toshihiro Okamoto, Kenzo Yamaguchi, Yoshiki Naoi, Yuusuke Takashima and Masanobu Haraguchi :
Si導波路上に配置した金属ナノ構造の共鳴特性評価,
第68回応用物理学会春季学術講演会, 19a-Z08-8, Mar. 2021.
17. 川村 武寛, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
二波長で動作する高屈折率メタ構造による高感度屈折率検出,
第68回応用物理学会春季学術講演会, 19p-Z08-1, Mar. 2021.
18. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
TiO2メタ周期構造を表面に有するAlGaN系深紫外発光ダイオードのコリメート特性,
第68回応用物理学会春季学術講演会, 19a-Z08-7, Mar. 2021.
19. 伊藤 寛人, Toshihiro Okamoto, Kenzo Yamaguchi, Yoshiki Naoi, Yuusuke Takashima and Masanobu Haraguchi :
トンネル接合型テラヘルツ光源のための指向性アンテナの設計,
第68回応用物理学会春季学術講演会, 17a-Z09-6, Mar. 2021.
20. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
構造高さを変調したTiO2メタ表面による集光紫外発光ダイオードの提案,
日本光学会年次学術講演会Optics & Photonics Japan 2020, 17pC4, Nov. 2020.
21. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
高屈折率差周期ブリッジ構造による可視光フィルター,
第81回応用物理学会秋季学術講演会, 11a-Z17-8, Sep. 2020.
22. Yoshio Mizumoto, Yuusuke Takashima, Yoshiki Naoi and Takuro Tomita :
Ni/SiC界面へのフェムト秒レーザ照射による熱アニールを用いないオーミック電極形成,
第81回応用物理学会秋季学術講演会, 9a-Z18-4, Sep. 2020.
23. Yoshio Mizumoto, Yuusuke Takashima, Yoshiki Naoi and Takuro Tomita :
SiC上Ni電極剥離に着目したフェムト秒レーザ照射改質による電極形成,
2020年度応用物理・物理系学会中国四国支部合同学術講演会, Bp-7, Aug. 2020.
24. Kenta Sugimoto, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Ge/Niサブ波長周期電極を有する紫外LEDの偏光特性,
2020年度応用物理・物理系学会中国四国支部合同学術講演会, Bp-6, Aug. 2020.
25. Kosuke Manano, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Niナノ粒子/サファイア基板系における紫外・可視光散乱のNi粒径依存性,
2020年度応用物理・物理系学会中国四国支部合同学術講演会, Bp-3, Aug. 2020.
26. Kosuke Manano, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
In添加Niナノ粒子を用いた紫外波長フィルター,
第67回応用物理学会春季学術講演会, 15a-PA4-16, Mar. 2020.
27. Haruka Ohshita, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
変調サブ波長周期電極を用いた集光機能を有する発光ダイオードの理論的検討,
第67回応用物理学会春季学術講演会, 15a-PA4-10, Mar. 2020.
28. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
GaNサブ波長格子を用いた400nm波長帯で動作する高感度屈折率センサー,
第67回応用物理学会春季学術講演会, 13p-B409-9, Mar. 2020.
29. Reiya Aono, Yuusuke Takashima, Yoshiki Naoi, Takeshi Yasui and Kentaro Nagamatsu :
紫外光LEDの大気中における光減衰に関する研究,
第67回応用物理学会春季学術講演会予稿集, 12p-B409-8, Mar. 2020.
30. 真名野 皓介, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
インジウムにより制御したニッケル島状構造を用いた高感度光学式磁場センサー,
日本光学会年次学術講演会Optics & Photonics Japan 2019, 4aP3, Dec. 2019.
31. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Niナノ粒子を用いた光学式磁場センサー感度の粒子径・密度依存性,
日本光学会年次学術講演会Optics & Photonics Japan 2019, 4aP2, Dec. 2019.
32. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Niナノ粒子を用いた光学式磁場検出の高感度化,
第80回応用物理学会秋季学術講演会, 19p-PA6-19, Sep. 2019.
33. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
導波層電子蓄積効果を利用した共鳴型カ ラーフィルター,
2019年度応用物理・物理系学会中国四国支部合同学術講演会, Fp-8, Jul. 2019.
34. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
低アスペクト比Geサブ波長格子中を用いた可視域偏光フィルター,
第66回応用物理学会春季学術講演会, 11p-PB1-19, Mar. 2019.
35. 片山 裕之, Yoshiki Naoi, Tatsuya Okada, 田中 康弘 and Takuro Tomita :
フェムト秒レーザー照射による結晶改質がp-GaNへのオーミックコンタクトに与える影響,
第66回応用物理学会春季学術講演会, 10a-W631-12, Mar. 2019.
36. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
アニール処理によるNiナノ粒子を用いた微小磁場検出,
第66回応用物理学会春季学術講演会, 10a-W621-13, Mar. 2019.
37. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長回折格子/導波路複合構造による二波長フィルター,
第79回応用物理学会秋季学術講演会, 20p-224A-7, Sep. 2018.
38. Ryohei Sugi, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
非線形光学効果によるナノ周期構造透過光制御,
2018年度応用物理・物理系学会中国四国支部合同学術講演会, Ga-4, Aug. 2018.
39. Kohei Moriiwa, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Niナノ周期構造/SiO2/Ag薄膜系を用いた磁場検出,
2018年度応用物理・物理系学会中国四国支部合同学術講演会, Ga-3, Aug. 2018.
40. Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
ホール測定によるNi/SiC界面に形成されたフェムト秒レーザー改質層の電気特性評価,
第65回応用物理学会春季学術講演会, 20a-P1-4, Mar. 2018.
41. Hiroyuki Katayama, Hiroki Kawakami, Masaya Imagaki, Takuya Hashimoto, 山口 誠, 田中 康弘, Yoshiki Naoi, Tatsuya Okada and Takuro Tomita :
p-GaN上オーミック電極形成のためのフェムト秒レーザー照射方法の検討,
第65回応用物理学会春季学術講演会, 19p-A404-11, Mar. 2018.
42. Keita Kusaba, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期構造/導波構造を用いた垂直光入射系屈折率検知,
第65回応用物理学会春季学術講演会, 18p-P9-21, Mar. 2018.
43. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Ag/Niサブ波長周期構造による垂直入射型磁場センサーの高感度化,
第65回応用物理学会春季学術講演会, 18p-P9-20, Mar. 2018.
44. Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
SiC と金属の界面におけるフェムト秒レーザー照射支援アニール,
先進パワー半導体分科会第4回講演会, IIB-8, Nov. 2017.
45. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Ni ナノ回折格子を用いた垂直入射型微小磁場検出,
日本光学会年次学術講演会Optics & Photonics Japan 2017, 1pP4, Nov. 2017.
46. Yu Okamoto, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期金属ストライプ電極を用いた 偏光 UV-LED,
日本光学会年次学術講演会Optics & Photonics Japan 2017, 1pP3, Nov. 2017.
47. Keita Kusaba, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期構造を利用した光導波路モー ド共鳴による可視域二波長帯光検出,
日本光学会年次学術講演会Optics & Photonics Japan 2017, 1pP2, Nov. 2017.
48. Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
フェムト秒レーザー照射により作製したSiC上Ni電極の電気特性評価,
第78回応用物理学会秋季学術講演会, 8a-A410-2, Sep. 2017.
49. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
2層Niサブ波長周期構造を用いた微小磁場検出,
第78回応用物理学会秋季学術講演会, 6p-PA3-12, Sep. 2017.
50. Keita Kusaba, Yuusuke Takashima, Yoshiki Naoi and Masanobu Haraguchi :
導波構造上にサブ波長周期構造を実装した可視域二波長帯光検出器の開発,
2017年度応用物理・物理系学会中国四国支部合同学術講演会, Ep-5, Jul. 2017.
51. Keita Kusaba, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長格子/導波構造を有する二波長帯紫外光検出,
第64回応用物理学会春季学術講演会, 16p-P13-9, Mar. 2017.
52. Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
フェムト秒レーザー支援アニールによるSiC上へのNi電極作製,
第64回応用物理学会春季学術講演会, 15a-512-8, Mar. 2017.
53. Yuki Yamasaki, Hiroki Kawakami, Yoshiki Naoi and Takuro Tomita :
フェムト秒レーザーアニールによるp-GaN上へのNi/Auオーミック電極作製,
第64回応用物理学会春季学術講演会, 15a-512-7, Mar. 2017.
54. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期構造を用いた垂直入射型屈折率高感度検出,
第64回応用物理学会春季学術講演会, 14a-F202-8, Mar. 2017.
55. Masayuki Satake, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
表面実装サブ波長周期構造中の固有モードを用いた窒化物系 LED の放射パターン制御,
日本光学会年次学術講演会Optics & Photonics Japan 2016, 1pP16, Nov. 2016.
56. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
高屈折率差サブ波長周期構造を用いた広範囲な屈折率に対する高感度屈折率検出,
日本光学会年次学術講演会Optics & Photonics Japan 2016, 1pP15, Nov. 2016.
57. Masato Tanabe, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
紫外域偏光制御におけるナノ周期構造の形状依存,
日本光学会年次学術講演会Optics & Photonics Japan 2016, 1pP4, Nov. 2016.
58. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長構造中の固有モード波数分散関係を用いた屈折率検出の高感度化,
第77回応用物理学会秋季学術講演会, 15a-P5-14, Sep. 2016.
59. Yu Okamoto, Yuusuke Takashima, Masayuki Satake, Masato Tanabe, Masanobu Haraguchi and Yoshiki Naoi :
高透過ストライプ状p型電極を用いたUV-LEDの光取り出し制御,
2016年度応用物理・物理系学会中国四国支部合同学術講演会, Bp-11, Jul. 2016.
60. Keita Kusaba, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長格子/導波構造による二波長帯紫外光検出器の開発,
2016年度応用物理・物理系学会中国四国支部合同学術講演会, Bp-10, Jul. 2016.
61. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
ナノ周期構造中の固有モード共鳴を用いた高感度屈折率検出,
第63回応用物理学会春季学術講演会, 21p-P1-8, Mar. 2016.
62. Yusuke Takidani, Kenta Kondo, Yoshiki Naoi, Takuro Tomita and Tatsuya Okada :
レーザー支援アニールによるNi/SiC界面でのニッケルシリサイド形成及び炭素拡散,
公益社団法人 応用物理学会 先進パワー半導体分科会 第2回講演会, Vol.2, 148, Nov. 2015.
63. Yuusuke Takashima, Yu Okamoto, Masato Tanabe, Masayuki Satake, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期構造の電極を有する窒化物系UV-LEDの発光特性,
日本光学会年次学術講演会Optics & Photonics Japan 2015, 29pC10, Oct. 2015.
64. Yuusuke Takashima, Masato Tanabe, Masanobu Haraguchi and Yoshiki Naoi :
固有モード複素分散関係を用いたサブ波長回折格子の紫外域偏光特性,
第76回応用物理学会秋季学術講演会, Vol.75, 13a-2A-5, Sep. 2015.
65. Masato Tanabe, Yuusuke Takashima, Ryo Shimizu, Masayuki Satake, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長回折格子内固有モード共鳴を用いた紫外光偏光制御,
2015年度応用物理・物理系学会中国四国支部合同学術講演会, Ga-5, Aug. 2015.
66. Masayuki Satake, Yuusuke Takashima, Ryo Shimizu, Masato Tanabe, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長回折格子を用いた窒化物系LEDの配向特性評価,
2015年度応用物理・物理系学会中国四国支部合同学術講演会, Ga-4, Aug. 2015.
67. Yota Bando, Yoshiki Naoi and Takuro Tomita :
SiC基板への回路描画を目指したフェムト秒レーザー改質,
2015年度応用物理・物理系学会中国四国支部合同学術講演会, Ga-3, Aug. 2015.
68. Yuusuke Takashima, Masato Tanabe, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
Siサブ波長回折格子/SiO2膜/LED構造を有する窒化物系偏光LED,
第62回応用物理学会春季学術講演会, 13p-B1-7, Mar. 2015.
69. Ryo Shimizu, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期構造を有する窒化物系LED の 発光特性,
日本光学会年次学術講演会Optics & Photonics Japan 2014, 6pP11, Nov. 2014.
70. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長金属回折格子の紫外域偏光特性の理論検討,
第75 回応用物理学会秋季学術講演会, Vol.75, 19p-C1-10, Sep. 2014.
71. Eizo Yanagita, Kenta Kondo, Yota Bando, Manato Deki, 牧野 高紘, 大島 武, Yoshiki Naoi and Takuro Tomita :
Electrical Conduction Mechanism in Modified Areas Irradiated by Femtosecond Laser on SiC,
第75 回応用物理学会秋季学術講演会講演予稿集, Vol.75, 03-226, Sep. 2014.
72. Ayato Kitamura and Yoshiki Naoi :
AlxCyPz 薄膜の表面モフォロジーとその物性評価,
平成26年度電気関係学会四国支部連合大会, 11-3, Sep. 2014.
73. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
多層サブ波長回折格子を有するLEDの偏光特性,
2014年度応用物理・物理系学会中国四国支部合同学術講演会, Ea-6, Jul. 2014.
74. Yuusuke Takashima, Kohsuke Nambara, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
Cr-サブ波長回折格子を用いた紫外域偏光制御の理論的検討,
第61回応用物理学会春季学術講演会, 19a-F10-9, Mar. 2014.
75. Tomoki Oka, Manato Deki, Yoshiki Naoi, 牧野 高紘, 大島 武 and Takuro Tomita :
Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas on SiC,
第 61 回応用物理学会春季学術講演会 講演予稿集, Vol.61, 04-262, Mar. 2014.
76. Ryo Shimizu, Yuusuke Takashima and Yoshiki Naoi :
サブ波長回折格子形状のLED偏光特性に対する影響,
第61回応用物理学会春季学術講演会, 17a-E13-2, Mar. 2014.
77. Ayato Kitamura, Choi Yun Jeong and Yoshiki Naoi :
CxPy薄膜へのAl添加効果に関する研究,
平成25年度電気関係学会四国支部連合大会, 11-5, Sep. 2013.
78. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
低屈折率膜を有するサブ波長回折格子を実装したUV-LEDの偏光特性,
第74回応用物理学会秋季学術講演会, 19p-B5-16, Sep. 2013.
79. Ryo Shimizu, Yuusuke Takashima and Yoshiki Naoi :
低屈折率差サブ波長回折格子を有するLEDからの発光特性,
応用物理学会 中国四国支部 2013年度 支部学術講演会, Ap-11, Jul. 2013.
80. Yuusuke Takashima, Ryo Shimizu and Yoshiki Naoi :
UV-LED上サブ波長回折格子の偏光特性評価,
第60回応用物理学会春季学術講演会, 28p-PA1-33, Mar. 2013.
81. Choi Yun Jeong, Takuro Tomita and Yoshiki Naoi :
Morphological change of carbon film surface through thermal annealing,
第60回応用物理学会春季学術講演会, 28p-PB3-9, Mar. 2013.
82. Takunari Fujimoto, Choi Yun Jeong, Takuro Tomita and Yoshiki Naoi :
リン添加による炭素系薄膜CVD成長に関する研究,
第42回結晶成長国内会議(NCCG-42), 10PS08, Nov. 2012.
83. Takeshi Kuki, Tatsuya Yokoyama, Takuro Tomita and Yoshiki Naoi :
MOCVD法によるリン化ゲルマニウム結晶成長に関する研究,
第42回結晶成長国内会議(NCCG-42), 10PS07, Nov. 2012.
84. Ryo Shimizu, Yuusuke Takashima and Yoshiki Naoi :
SiO2サブ波長回折格子のLED応用に関する検討,
平成24年度電気関係学会四国支部連合大会, 11-5, Sep. 2012.
85. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長回折格子による直線偏光UV-LEDの理論的解析,
第73回応用物理学会学術講演会, Vol.12a-PB4-27, Sep. 2012.
86. Kim Dohyung, 李 熙燮, Kazuya Yamazumi, Yoshiki Naoi and Shiro Sakai :
AlxCy によるAlXGa1-xN 中への拡散,
第73回応用物理学会学術講演会, 12p-H9-15, Sep. 2012.
87. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長回折格子を用いたAlGaN系LEDの偏光選択特性,
応用物理学会 中国四国支部 2012年度 支部学術講演会, No.Ap-3, Jul. 2012.
88. Choi Yun Jeong, Takunari Fujimoto, Fumiya Horie, Yoshiki Naoi and Shiro Sakai :
Study of phosphorus incorporated DLC films grown by CVD technique,
第59回応用物理学関係連合講演会, GP5, Mar. 2012.
89. 和田 祥吾, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
金属マスクを施したサファイア表面周期構造へのGaN成長と評価,
平成22年度電気関係学会四国支部連合大会, 11-18, Sep. 2010.
90. 楠 貴大, 沼島 明菜, Yoshiki Naoi and Shiro Sakai :
ナノ微粒子技術を用いたGaN表面周期構造の作製,
平成22年度電気関係学会四国支部連合大会, 11-17, Sep. 2010.
91. 松本 将和, 福田 弘之, Yoshiki Naoi and Shiro Sakai :
GaN系UV-LEDの偏光特性,
平成22年度電気関係学会四国支部連合大会, 11-14, Sep. 2010.
92. 川崎 晃一, Yoshiki Naoi and Shiro Sakai :
MOCVD法によるSiおよびサファイア上へのGeC薄膜の成長,
平成22年度電気関係学会四国支部連合大会, 11-2, Sep. 2010.
93. 堀江 郁哉, Yoshiki Naoi and Shiro Sakai :
MOCVD法によるAlC薄膜の成長,
第71回応用物理学会学術講演会, 16a-ZT-11, Sep. 2010.
94. 原 航平, Yoshiki Naoi and Shiro Sakai :
Taマスクを用いたMOCVD再成長GaNの表面モフォロジー改善,
第71回応用物理学会学術講演会, 15p-C-8, Sep. 2010.
95. Katsushi Nishino, 澤井 佑介, 成行 祐児, 野田 丈嗣, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
ナノ加工GaN基板上再成長層のTEM観察,
第57回応用物理学関係連合講演会, 19a-TB2, Mar. 2010.
96. Yoshiki Naoi, 松本 将和, 譚 天亜, Shiro Sakai, 深野 敦之 and 田中 覚 :
表面ナノ周期構造を有するInGaN-LEDからの輻射光空間分布特性,
第70回応用物理学会学術講演会, 11a-X-8, Sep. 2009.
97. 野田 丈嗣, Yoshiki Naoi and Shiro Sakai :
MOCVD-GaN on Sapphire上AlGaNのクラックの低減に関する研究(2),
第70回応用物理学会学術講演会, 11a-E-10, Sep. 2009.
98. 原 航平, Yoshiki Naoi and Shiro Sakai :
Taマスクを用いた下地層エッチングによるGaN再成長,
第70回応用物理学会学術講演会, 11a-E-9, Sep. 2009.
99. 張 晶, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
裏面入射GaN系表面ナノ構造光検出器,
第70回応用物理学会学術講演会, 10a-E-9, Sep. 2009.
100. 成行 祐児, 松本 将和, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
ナノ加工を施したGaN上への再成長及びその評価,
第70回応用物理学会学術講演会, 8p-F-2, Sep. 2009.
101. 遠野 充明, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
ナノインプリント技術により周期的ナノ構造を形成したGaN系光デバイスからのEL特性,
第56回応用物理学関係連合講演会, 1p-ZJ-11, Apr. 2009.
102. Yoshiki Naoi, Shiro Sakai, 深野 敦之, 田中 覚, 納田 卓, 木村 真大, 川野 俊輔 and 村本 宜彦 :
サファイア上周期的ナノ構造を形成するためのナノインプリント技術開発とGaN系LED,
第56回応用物理学関係連合講演会, 1p-ZJ-10, Apr. 2009.
103. 張 晶, 遠野 充明, 奥野 誠亮, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
GaNナノ加工pnダイオード光検出器,
第56回応用物理学関係連合講演会, 1a-ZJ-30, Apr. 2009.
104. 野田 丈嗣, 松岡 遼, Yoshiki Naoi and Shiro Sakai :
MOCVD-GaN on Sapphire上AlGaNのクラックの低減に関する研究,
第56回応用物理学関係連合講演会, 1a-ZJ-14, Apr. 2009.
105. 北村 政治, 川崎 晃一, 吉田 博紀, Yoshiki Naoi and Shiro Sakai :
MOCVD法によるSi基板上へのSi1-x-yGexCy薄膜の成長,
第56回応用物理学関係連合講演会, 30p-E-6, Mar. 2009.
106. 成行 祐児, 松本 将和, 遠野 充明, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
ナノ加工を用いたGaNのC-V特性,
第56回応用物理学関係連合講演会, 30p-ZJ-3, Mar. 2009.
107. 南部 紗織, Yoshiki Naoi and Shiro Sakai :
表面プラズモンポラリトンによる半導体LED の出力改善に関する検討,
平成20年度電気関係学会四国支部連合大会, 11-4, Sep. 2008.
108. 遠野 充明, Yoshiki Naoi, Shiro Sakai and 和地 順蔵 :
ナノインプリント技術によるサファイア基板上へのナノ構造の形成,
平成20年度電気関係学会四国支部連合大会, 11-3, Sep. 2008.
109. 結城 勇介, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
直接合成法を用いたa 面GaN 結晶成長のためのNH3 流量の検討,
平成20年度電気関係学会四国支部連合大会, 11-2, Sep. 2008.
110. 加藤 篤, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
SiO2 を斜め蒸着した凹凸GaN テンプレート上へのGaN成長,
平成20年度電気関係学会四国支部連合大会, 11-1, Sep. 2008.
111. 松岡 遼, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
ストライプ状金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長,
2008年(平成20年)秋季第69回応用物理学会学術講演会, 2a-CA-8, Sep. 2008.
112. 松岡 遼, 沖本 聖, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長,
2008年(平成20年)春季第55回応用物理学会連合講演会, 29p-B-18, Mar. 2008.
113. 沖本 聖, 遠野 充明, 南部 紗織, 北村 政治, 月原 政志, 片岡 研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
AlGaN系紫外発光ダイオードの光出力に及ぼす電極形状の影響に関する研究,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-29, Sep. 2007.
114. 南部 紗織, Yoshiki Naoi and Shiro Sakai :
AlGaN系紫外LEDのエレクトロルミネッセンスの温度特性,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-11, Sep. 2007.
115. 仁木 貴敏, 片岡 研, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
MOCVD成長AlGaNのMgドーピングによる結晶性への影響,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-22, Sep. 2007.
116. 松岡 遼, 池田 賢司, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
オフ角r面サファイア基板上にMOCVD法によるa面GaNのX線回折による評価,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-14, Sep. 2007.
117. 加藤 篤, 月原 政志, 片岡 研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
UV-LED用高Al組成AlGaN結晶の高品質化に関する研究,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-11, Sep. 2007.
118. 遠野 充明, 沖本 聖, Yoshiki Naoi, Katsushi Nishino, 楠浦 崇央, ミトラ アヌパム, 納田 卓, 木村 真大, 川野 俊輔 and 村本 宣彦 :
ナノ・エッチングしたサファイア基板上へのGaN-LEDのMOCVD成長,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-5, Sep. 2007.
119. 遠野 充明, 沖本 聖, 加藤 篤, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, 楠浦 崇央 and ミトラ アヌパム :
ナノ・エッチングしたサファイア上へのGaNのMOCVD成長,
第68回応用物理学会学術講演会, Sep. 2007.
120. 松岡 遼, 池田 賢司, 濱 敬重, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Rakjun Choi, S.M. Lee and 小池 正好 :
MOCVDにより直接高温成長した高品質a面GaN・InGaN結晶成長,
第54回応用物理学会学術講演会, Mar. 2007.
121. 濱 敬重, 小野 耕大, 池田 賢司, Rakjun Choi, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, S.M. Lee and 小池 正好 :
a面バルクGaNおよびr面サファイア上a面GaNに作製した青色発光ダイオード,
第67回応用物理学会学術講演会, Sep. 2006.
122. 片岡 研, 沖本 聖, 仁木 貴敏, 住吉 和英, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
SiNを用いたAlInGaN系紫外LED高出力化の検討,
第67回応用物理学会学術講演会, Sep. 2006.
123. 池田 賢司, Rakjun Choi, 福本 哲也, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, 小池 正好 and S.M. Lee :
a面成長InGaN/GaN LEDにおけるInGaN活性層の解析,
第67回応用物理学会学術講演会, Aug. 2006.
124. 仁木 貴敏, 月原 政志, 沖本 聖, 住吉 和英, 片岡 研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
中間温度成長AlGaN層と多重量子井戸(MQW)層によるMOCVD成長AlGaN中の転位低減,
応用物理学会中国四国支部,日本物理学会中国支部・四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 144, Jul. 2006.
125. 住吉 和英, 月原 政志, 片岡 研, 沖本 聖, Yoshiki Naoi and Shiro Sakai :
低温中間層による凸凹サファイア基板上Al0.17Ga0.83NのMOCVD,
応用物理学会中国四国支部,日本物理学会中国支部・四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 143, Jul. 2006.
126. 沖本 聖, 月原 政志, 住吉 和英, 片岡 研, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai and Shiro Sakai :
低温成長層の導入によるAlGaNの高品質化,
応用物理学会中国四国支部,日本物理学会中国支部・四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 142, Jul. 2006.
127. 濱 敬重, 南部 紗織, 沖本 聖, 月原 政志, 片岡 研, 住吉 和英, Yoshiki Naoi and Shiro Sakai :
高Al組成窒化物系UV-LED用Ni/Au系透明電極の解析,
応用物理学会中国四国支部,日本物理学会中国支部・四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 137, Jul. 2006.
128. 池田 賢司, Choi Rak-Jun, 福本 哲也, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Lee Min Soo and 小池 正好 :
AlInN-buffer層上のALEによるa面GaNの高品質化,
第53回応用物理学会学術振興会講演予稿集, Vol.26, 401, Mar. 2006.
129. 住吉 和英, 月原 政志, 沖本 聖, 河道 修一, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
低温中間層を用いた加工サファイア基板上のAl0.17Ga0.83N MOCVD成長,
第53回応用物理学会学術振興会講演予稿集, Vol.25, 378, Mar. 2006.
130. 山本 真美子, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
フラックス成長BP結晶上へのGaN成長,
第53回応用物理学会学術振興会講演予稿集, Vol.22, 346, Mar. 2006.
131. 住吉 和英, Shiro Sakai, Yoshiki Naoi and Katsushi Nishino :
窒化物半導体と紫外発光デバイス,
第7回IEEE広島支部学生シンポジウム(HISS), Nov. 2005.
132. 沖本 聖, 月原 政志, 住吉 和英, Yoshiki Naoi and Shiro Sakai :
AlGaN-MOCVD成長における GaNPバッファ層の効果, --- Effect of GaNP buffer-layer on AlGaN growth by MOCVD ---,
電気関係学会四国支部連合大会, 149, Sep. 2005.
133. 河道 修一, 住吉 和英, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
加工サファイア上に成長したAl0.07Ga0.93N薄膜の透過型電子顕微鏡による評価, --- The dislocation measurement of in Al0.07Ga0.93N film on patterned sapphire substrate by TEM ---,
電気関係学会四国支部連合大会, 150, Sep. 2005.
134. 山本 真美子, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
フラックス法によるBP結晶成長, --- Crystal Growth of BP by Flux Method ---,
電気関係学会四国支部連合大会, 151, Sep. 2005.
135. 閻 発旺, 住吉 和英, 月原 政志, Yoshiki Naoi and Shiro Sakai :
MOCVD法によるサファイア基板上へのSb添加AlNの成長,
第66回応用物理学会学術振興会講演予稿集, 269, Sep. 2005.
136. 住吉 和英, 月原 政志, 河道 修一, Yoshiki Naoi and Shiro Sakai :
低温GaNPバッファー層を用いた加工サファイア基板上のAlGaN MOCVD成長,
第66回応用物理学会学術振興会講演予稿集, 269, Sep. 2005.
137. Yoshiki Naoi, 中村 晃啓, 小野 耕大, Shiro Sakai, 木村 真大 and 納田 卓 :
p-AlGaN/GaN 超格子構造における不純物ドーピングによる混晶化, --- Impurity Induced Alloying in p-AlGaN/GaN Superlattice Structures ---,
第66回応用物理学会学術振興会講演予稿集, 279, Sep. 2005.
138. 月原 政志, 住吉 和英, 閻 発旺, Yoshiki Naoi and Shiro Sakai :
高品質AlGaNへ向けての低温成長AlGaN層の検討, --- Investigation of low temperature growth AlGaN layer for high quality AlGaN ---,
第66回応用物理学会学術振興会講演予稿集, 274, Sep. 2005.
139. Jin-Ping Ao, Kubota Naotaka, Wang Hong-Xing, Liu Yu-Huai, Kikuta Daigo, Yoshiki Naoi, Shiro Sakai and Yasuo Ohno :
Thermal Stability of Copper Schottky Contact on AlGaN/GaN and n-GaN,
第50回応用物理学関係連合講演会, Mar. 2003.
140. 久保田 尚孝, Jin-Ping Ao, 王 宏興, 劉 玉懐, 菊田 大悟, Yoshiki Naoi, Shiro Sakai and Yasuo Ohno :
n-GaN上のCu及びNi/Auショットキーコンタクトの比較,
第50回応用物理学関係連合講演会, Mar. 2003.

Et cetera, Workshop:

1. 藤井 滉樹, Takumi Miyagawa, ATSUSHI Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
X線回折を用いたステップバンチングの発生オフ角評価,
応用物理学会中四国支部・若手半導体研究会, Aug. 2022.
2. Masaki Fujita, Takumi Miyagawa, ATSUSHI Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
MOVPE 超高温 成長中断 アニーリングによる A lN 転位低減手法,
応用物理学会中四国支部・若手半導体研究会, Aug. 2022.
3. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
高屈折率ナノ構造による深紫外∼可視域での発光およびセンシングデバイス,
第173回ラドテック研究会講演会, 2, Nov. 2021.
4. Atsushi Tomita, 津田 翔太, 青野 零弥, 宮川 拓己, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
気相反応を抑制した高温MOVPEにおけるV/Ⅲ比依存性,
2021年度応用物理学会中国四国支部若手半導体研究会, 1-11, Aug. 2021.
5. 津田 翔太, 宮川 拓己, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
極性制御による高品質AlN成長手法の確立,
2021年度応用物理学会中国四国支部若手半導体研究会, 1-12, Aug. 2021.
6. 揚田 侑哉, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
AlN高温成長での面内膜厚分布の改善,
LED総合フォーラム2021in徳島, P-17, Feb. 2021.
7. 杉本 健太, Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期電極を有する紫外発光ダイオード偏光特性に対する電極材料の影響,
LED総合フォーラム2021in徳島, P-10, Feb. 2021.
8. 川村 武寛, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
TiO2-メタ周期構造による高感度ガス検出用光デバイス,
第一回 電子情報通信学会支部CoEシンポジウム, 11, Jan. 2021.
9. Yuusuke Takashima and Yoshiki Naoi :
メタ周期構造による偏光UV-LED / メタ構造を利用したセンサーデバイス,
CEATEC 2020 Online, Oct. 2020.
10. Reiya Aono, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
深紫外LEDの大気中における光減衰に関する研究,
LED総合フォーラム2020in徳島, P-16, Feb. 2020.
11. Haruka Ohshita, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Ge/Niサブ波長周期電極構造を用いた配光制御発光ダイオードの理論的検討,
LED総合フォーラム2020in徳島, P-11, Feb. 2020.
12. Kenta Sugimoto, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
高屈折率材料を用いたサブ波長回折格子電極による紫外LEDの偏光制御,
LED総合フォーラム2020in徳島, P-10, Feb. 2020.
13. 岡野 裕有, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
導波層電子蓄積効果を利用した共鳴型カラーフィルター,
レーザー学会中国・四国支部,関西支部連合若手学術交流研究会, A-2, Nov. 2019.
14. 村上 堅也, Yoshiki Naoi, Yuusuke Takashima and Kentaro Nagamatsu :
深紫外LEDの発光層温度予測と寿命の関係,
徳島大学ポストLEDフォトニクス公開シンポジウム2019, P-20, Oct. 2019.
15. 青野 零弥, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
次世代癌治療用深紫外スポットLEDの開発,
徳島大学ポストLEDフォトニクス公開シンポジウム2019, P-19, Oct. 2019.
16. 津田 翔太, Yoshiki Naoi, Yuusuke Takashima and Kentaro Nagamatsu :
次世代殺菌浄水システム,
徳島大学ポストLEDフォトニクス公開シンポジウム2019, P-18, Oct. 2019.
17. 大下 悠, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
自動運転応用に向けた紫外LEDの高機能化に関する理論的検討および取り組み,
徳島大学ポストLEDフォトニクス公開シンポジウム2019, P-21, Oct. 2019.
18. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
微細ナノ構造を用いた可視∼紫外フォトニックデバイス,
第69回CVD研究会「第30回夏季セミナー」, Aug. 2019.
19. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期電極構造を用いた発光ダイオードの配光特性制御の理論的検討,
LED総合フォーラム2019in徳島, P-15, Feb. 2019.
20. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
磁性体ナノ構造を用いた導波路共鳴磁場センサー,
日本光学会ナノオプティクス研究グループ 第25回研究討論会, P06, Nov. 2018.
21. Yuusuke Takashima, Keita Kusaba, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長回折格子/LED構造を用いた 垂直入射による高感度屈折率検出の理論的検討,
LED総合フォーラム2018in徳島, P-6, Feb. 2018.
22. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Ni ナノ周期構造を用いた垂直光入射配置型磁場センサーの開発,
日本材料学会平成29 年度第 4 回半導体エレクトロニクス部門委員会第1 回講演会, P5, Jan. 2018.
23. Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
Niサブ波長周期構造を用いた垂直入射型高感度磁場センサー,
日本光学会ナノオプティクス研究グループ 第24回研究討論会, Dec. 2017.
24. Masayuki Satake, Yuusuke Takashima, Masanobu Haraguchi and Yoshiki Naoi :
FDTD法を用いたサブ波長周期構造によるLED放射パターンの理論的検討,
LED総合フォーラム2016in徳島, P-4, Dec. 2016.
25. Yu Okamoto, Yuusuke Takashima and Yoshiki Naoi :
サブ波長周期構造電極を有する低光損失偏光UV-LEDの理論的検討,
LED総合フォーラム2016in徳島, P-3, Dec. 2016.
26. Hiroki Kawakami, Kenta Kondo, Yoshiki Naoi and Takuro Tomita :
連続波レーザーアニールによるSiC上へのNi電極作製と評価,
第35回電子材料シンポジウム, Vol.114, No.338, Fr1-5, Jul. 2016.
27. Yuna Machida, Yuusuke Takashima, Ryo Shimizu, Masato Tanabe, Masayuki Satake and Yoshiki Naoi :
サブ波長金属回折格子を用いた紫外域偏光制御における材料及び構造設計指針の理論検討,
LED総合フォーラム2014-2015in徳島, P-4, Jan. 2015.
28. Yuusuke Takashima, Masato Tanabe, Masayuki Satake, Yuna Machida, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
有限時間領域差分法による紫外域の多層サブ波長回折格子偏光特性の理論的検討,
LED総合フォーラム2014-2015in徳島, P-3, Jan. 2015.
29. Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi and Yoshiki Naoi :
Linearly polarized nitride-based light emitting diode with multilayer subwavelength grating,
IEICE Technical Report, Vol.114, No.338, 69-72, Nov. 2014.
30. Yuusuke Takashima, Ryo Shimizu, 北村 彩人, Katsushi Nishino, Yoshiki Naoi, Naoyuki Shimomura and 雄二 大来 :
Learning Effects of the Regional Case Study on Engineering's Ethics,
The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-13, No.3, 31-35, Dec. 2013.
31. Naoyuki Shimomura, Yoshiki Naoi and Masaki Hashizume :
Introduction of Introductory Engineering on First Year's and Introductory Education,
The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-13, No.2, 25-28, Sep. 2013.
32. Ryo Shimizu, Yuusuke Takashima and Yoshiki Naoi :
高屈折率差サブ波長回折格子のLED応用への検討,
LED総合フォーラム2013in徳島, P-93, Apr. 2013.
33. Yuusuke Takashima, Ryo Mabuchi, Yoshiki Naoi, Naoyuki Shimomura and 雄二 大来 :
Education improvement with opinion poll method and the contribution to the class by teaching assistant in the lecture of ethics for engineer,
The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-12, No.3, 41-46, Dec. 2012.
34. Yuusuke Takashima and Yoshiki Naoi :
金を用いたサブ波長回折格子の偏光制御,
LED総合フォーラム2012in徳島, P-19, Apr. 2012.
35. 馬渕 良, 影山 達也, Naoyuki Shimomura, Yoshiki Naoi and 雄二 大来 :
Use of web pages for course to engineering ethics education in university,
The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-11, No.3, 23-28, Dec. 2011.
36. 楠 貴大, 沼島 明菜, Yoshiki Naoi and Shiro Sakai :
ナノ微粒子技術を用いたGaN表面周期構造の作製と高性能LED作製への応用検討,
LED総合フォーラム, 103-104, Jun. 2011.
37. 松本 将和, 福田 弘之, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
表面・界面に周期構造を有するGaN系LEDの配向特性評価,
LED総合フォーラム, 69, Apr. 2010.
38. Katsushi Nishino and Yoshiki Naoi :
電気電子工学科基礎科目における再履修生を対象とした授業の試み,
工学教育シンポジウム2010(SEE2010), Mar. 2010.
39. Y.J. Choi, Yoshiki Naoi, Kohei Hara, Masakzu Matsumoto, Shiro Sakai and S.N. Yi :
GaN nanorod fabrication by reactive ion etching and nanoimprint lithography technique,
Proceedings of the fourth symposium on "The Fourth International Symposium:Development of the Global Doble Degree Program(GDPP)", 54, Dec. 2009.
40. 張 晶, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
GaN系表面ナノ構造光検出器,
電子情報通信学会電子デバイス研究会, Vol.109, No.288, 83-87, Nov. 2009.
41. 原 航平, Yoshiki Naoi and Shiro Sakai :
Taマスクを用いた下地層エッチングによるGaN再成長,
電子情報通信学会電子デバイス研究会, Vol.109, No.288, 1-4, Nov. 2009.
42. Yoshiki Naoi :
紫外線LEDの開発動向と今後の応用について,
徳島ビジネスチャレンジメッセ2009 LEDコンソーシアム基調講演, Oct. 2009.
43. Yoshiki Naoi :
LEDの光出力改善技術,
技術情報協会:LED照明の高輝度・長寿命化技術セミナー, May 2009.
44. 遠野 充明, 張 晶, Yoshiki Naoi, Shiro Sakai and 和地 順蔵 :
ナノインプリント技術により周期的微細構造を施したGaN系デバイスからの電流注入発光特性,
電子情報通信学会電子デバイス研究会, Vol.ED2008-158, Nov. 2008.
45. 遠野 充明, 沖本 聖, Yoshiki Naoi, Katsushi Nishino, Shiro Sakai, 楠浦 崇央, ミトラ アムパム, 納田 卓, 木村 真大, 川野 俊輔 and 村本 宣彦 :
ナノ微細加工サファイア基板上へのGaN系発光ダイオードの作製,
第1回フロンティア研究センターシンポジウム, Vol.P3, Dec. 2007.
46. 松岡 遼, 池田 賢司, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
オフ角r面サファイア上MOCVD成長a面GaNのX線回折評価,
第1回フロンティア研究センターシンポジウム, Vol.P2, Dec. 2007.
47. 北村 政治, 沖本 聖, 遠野 充明, 南部 紗織, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
340nm帯ナイトライド系 UV-LEDの自己発熱と電流集中効果による発光特性への影響,
第1回フロンティア研究センターシンポジウム, Vol.P1, Dec. 2007.
48. K Kataoka, M Tsukihara, T Niki, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
The segragation and saturation phenomena of Mg concentration in AlGaN,
26th Electronic Materials Symposium (EMS-26), Vol.H7, Jul. 2007.
49. R Matsuoka, K Ikeda, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Chracterization of a-plane MOCVD-grown GaN on off-angle r-plane sapphire substrates,
26th Electronic Materials Symposium (EMS-26), Vol.E12, Jul. 2007.

Patent:

1. Shiro Sakai and Yoshiki Naoi : 発光ダイオードおよびその製造方法, 2010-509270 (May 2008), 5384481 (Oct. 2013).
2. Shiro Sakai, Yoshiki Naoi and チョイ ラクジュン : method of growing non-polar a-plane gallium nitride, 2006-077492 (Mar. 2006), .
3. Shiro Sakai, Yoshiki Naoi, RakJun Choi, SooMin Lee and Masayoshi Koike : 非極性a面窒化ガリウム単結晶の製造方法, 2006-47294 (Feb. 2006), .
4. Shiro Sakai, Yoshiki Naoi and Rakjun Choi : 無極性a面窒化ガリウム単結晶の製造方法, 2005-25184 (Mar. 2005), .

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

  • Development of high performance LED with subwavelength nano structure (Project/Area Number: 18K04238 )
  • Non-thermal anealing of the interface between wide band-gap semiconductor and metal induced by femtosecond laser irradiation (Project/Area Number: 17H03147 )
  • Development of three-dimensional micro processing techniques using near-infrared femtosecond laser (Project/Area Number: 26289019 )
  • High performance light emitting diode by subwavelength grating (Project/Area Number: 24560377 )
  • Development of new microprocessing technology of silicon crystalline substrate: internal, three-dimensional, arbitrary-shape removal processing (Project/Area Number: 23656109 )
  • Study on nitride-based semiconductor photonic devices with nano-imprint technique (Project/Area Number: 20560302 )
  • MATERIAL SCIENCE AND APPLICATION OF ALLOY NITRIC SEMICONDUCTORS (Project/Area Number: 11102005 )
  • 窒化物半導体による半金属合金の合成と評価に関する研究 (Project/Area Number: 10450010 )
  • 窒化物混晶半導体の界面物性評価 (Project/Area Number: 08750020 )
  • 窒化物混晶半導体の物性評価 (Project/Area Number: 07750017 )
  • A research on full-color LED using UV light emitting devices (Project/Area Number: 07555102 )
  • Search by Researcher Number (90253228)