Tokushima University / Educator and Researcher Directory --- Nishino, Katsushi

Personal Web Page

https://researchmap.jp/knishino (researchmap)

Field of Study

○	Semiconductor Physical Electronics

Subject of Study

○	AlN等窒化物半導体の結晶成長，物性評価，デバイス応用 (AlN, バルク結晶成長, 物性評価)

Book / Paper

Academic Paper (Judged Full Paper):

1.	Yuji Nariyuki, Masakazu Matsumot, Takeshi Noda, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2121-2123, 2010. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.200983481 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/pssc.200983481 (DOI: 10.1002/pssc.200983481)
2.	Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Journal of Crystal Growth, Vol.311, No.10, 2847-2849, 2009. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jcrysgro.2009.01.027 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jcrysgro.2009.01.027 (DOI: 10.1016/j.jcrysgro.2009.01.027)
3.	T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.5, No.9, 3066-3068, 2008. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.200779205 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/pssc.200779205 (DOI: 10.1002/pssc.200779205)
4.	Yoshiki Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, S. M. Lee and M. Koike : Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2810-2813, 2007. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.200674826 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-45749104253 (DOI: 10.1002/pssc.200674826, Elsevier: Scopus)
5.	M Yamamoto, Y Hamazaki, M Tsukihara, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.46, No.14, L323-L325, 2007. (Summary) BP with the size of 50 μm to 3 mm was synthesized by the Cu flux method. The BP crystals have a zincblend structure, and the lattice constant and the cathodoluminescence peak wavelength were 4.557 Å and 370 nm, respectively. GaN and AlN were grown by metalorganic chemical vapor deposition on BP. It was found that AlN grown at 1150 °C on (100)BP was grown smoothly but that grown on (111)BP had a rough surface. GaN, however, was irregularly grown on both (100) and (111)BP. It was demonstrated that AlN on (100)BP is another candidate as a substrate for a UV-light-emitting diode. (Keyword) AlN / GaN / MOCVD / BP / flux method (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.46.L323 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360847871783684096 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.46.L323 (DOI: 10.1143/JJAP.46.L323, CiNii: 1360847871783684096)
6.	M Tsukihara, K Sumiyoshi, T Okimoto, K Kataoka, S Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.300, No.1, 190-193, 2007. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jcrysgro.2006.11.011 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jcrysgro.2006.11.011 (DOI: 10.1016/j.jcrysgro.2006.11.011)
7.	K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al_0.17Ga_0.83N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Vol.46, No.2, 491-495, 2007. (Summary) The reduction of the dislocation density in a high-temperature (HT)-Al0.17Ga0.83N epitaxial layer was achieved by a middle-temperature (MT)-intermediate layer technique, in which the HT and the MT were 1050 and 950 °C, respectively. For one set of the MT-intermediate layer, the structure was 4.5-μm-thick HT-Al0.17Ga0.83N/1-μm-thick MT-intermediate layer/100-nm-thick HT-Al0.17Ga0.83N layer/low-temperature (LT)-GaNP buffer/trenched (0001) sapphire. The full-width at half maximum values of (0002) and ($10ar{1}2$) diffraction peaks of the X-ray diffraction for the Al0.17Ga0.83N epitaxial layer using one set of the MT-intermediate layer were improved to 359 and 486 arcsec compared with 401 and 977 arcsec for the film without the MT-intermediate layer technique, respectively. Transmission electron microscopy result showed that the dislocation density in the Al0.17Ga0.83N film using one set of MT-intermediate layer was reduced from $(1--4)imes 10^{10}$ to $1.7imes 10^{9}$ cm-2. The Al0.17Ga0.83N epitaxial film including two sets of MT-intermediate layers improved the most, showing a dislocation density of $9.3imes 10^{8}$ cm-2. (Keyword) intermediate layer / middle temperature / aluminum gallium nitride / metal-organic chemical vapor deposition (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.46.491 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1520572357679538176 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.46.491 (DOI: 10.1143/JJAP.46.491, CiNii: 1520572357679538176)
8.	Kazuhide Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Shuichi Kawamichi, Tadashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N film with Middle Temperature Intermediate Layer Grown on Trenched Sapphire Substrate by MOCVD, Journal of Crystal Growth, Vol.298, No.SI, 300-304, 2007. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jcrysgro.2006.10.031 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jcrysgro.2006.10.031 (DOI: 10.1016/j.jcrysgro.2006.10.031)
9.	Katsushi Nishino, A. Sakamoto and Shiro Sakai : Growth of thich a-plane GaN on r-plane sapphire by direct synthesis method, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2532-2535, 2007. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.200674785 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/pssc.200674785 (DOI: 10.1002/pssc.200674785)
10.	Shuichi Kawamichi, Katsushi Nishino, Kazuhide Sumiyoshi, Masashi Tsukihara, Fanwang Yan and Shiro Sakai : Inversion domain in AlGaN films grown on patterned sapphire substrate, Journal of Crystal Growth, Vol.298, 297-299, 2007. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jcrysgro.2006.10.030 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jcrysgro.2006.10.030 (DOI: 10.1016/j.jcrysgro.2006.10.030)
11.	Takashi Okimoto, Masashi Tsukihara, Kazuhide Sumiyoshi, Ken Kataoka, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.8, L236-L238, 2006. (Summary) AlxGa1-xN ($x eq 0.1$) epilayers grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition with low-temperature (LT)-GaNP buffer have been characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that the full width at half maximum (FWHM) values of the GaNP-buffer-based AlxGa1-xN ($x eq 0.1$) epilayers decrease are lower than that of the conventional GaN-buffer-based AlxGa1-xN ($x eq 0.1$) epilayers, but the difference becomes smaller as the Al composition increases. These results could be mainly attributed to a longer diffusion length with the GaNP buffer layer than with the GaN buffer layer. (Keyword) nucleation / MOCVD / XRD (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.45.L236 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360566396806119680 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.45.L236 (DOI: 10.1143/JJAP.45.L236, CiNii: 1360566396806119680)
12.	R.J. Choi, S. Kubo, M. Tsukihara, K. Inoue, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Effects of V/III flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.2, No.7, 2149-2152, 2005. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.200461442 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-27344459458 (DOI: 10.1002/pssc.200461442, Elsevier: Scopus)
13.	Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Hong-Dong Li, Hisao Sato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.10A, L1037-L1039, 2002. (Summary) GaドロップレットをはさみこみLEDの効率が改善した．Gaにより，その回りが歪みがあるようである．その歪みにより効率が改善する． (Keyword) ultraviolet (UV) / light-emitting diode (LED) / AlGaN / GaN / optical output power / Ga droplet layer (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.41.L1037 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282681231464576 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.41.L1037 (DOI: 10.1143/JJAP.41.L1037, CiNii: 1390282681231464576)
14.	Katsushi Nishino, Daigo Kikuta and Shiro Sakai : Bulk GaN growth by direct synthesis method, Journal of Crystal Growth, Vol.237-239, No.0, 922-925, 2002. (Summary) 直接合成法によるバルクGaNの結晶成長を行った．サファイア基板上にMOCVD法により薄膜GaNを成長したものを基板に用いると平坦な表面の厚膜GaNが得られた．サファイア上に直接成長を行うと表面は荒れ結晶性の良くないGaNが成長したが，直接合成法でもバッファ層を導入することにより表面が平坦で結晶性の良い厚膜GaNを成長することに成功した． (Keyword) single crystal growth / nitrides / semiconducting gallium compounds / VAPOR-PHASE EPITAXY / SURFACE-MORPHOLOGY / SUBLIMATION METHOD / HYDRIDE / SUBSTRATE (Link to Publication Site) ● Publication site (DOI): 10.1016/S0022-0248(01)02079-6 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/S0022-0248(01)02079-6 (DOI: 10.1016/S0022-0248(01)02079-6)
15.	Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Optical properties of bound excitons and biexcitons in GaN, IEICE Transactions on Electronics, Vol.E83-C, No.4, 605-611, 2000. (Summary) Excitonic optical properties of GaN homoepitaxial layers have been studied by means of magneto-luminescence and time-resolved luminescence spectroscopy. The luminescence lines due to the radiative recombination of excitons bound to neutral donors and acceptors have been measured under magnetic field up to 8T, which was aligned perpendicular and parallel to the hexagonal c-axis. Under the magnetic field aligned perpendicular to the hexagonal c-axis, both the donor- and acceptor-bound-exciton lines clearly split into two components, which originated from the Zeeman splitting. The effective g-factors for both the donor- and acceptor-bound excitons were estimated to be 2.02 and 2.47, respectively. Under the magnetic field aligned parallel to the hexagonal c-axis, slight broadening of the bound-exciton lines was observed and the Zeeman splitting was too small to be detected. On the other hand, the diamagnetic shift for both the donor- and acceptor-bound-exciton luminescence lines was observed under the magnetic field aligned both perpendicular and parallel to the hexagonal c-axis. It was found that the diamagnetic shift of the donor-bound exciton was smaller than that of the acceptor-bound exciton. Furthermore, recombination dynamics of excitonic transitions was measured under high-density excitation. An excitation-density-dependent transition of the dominant radiative recombination process from donor-bound excitons to biexcitons was clearly observed in the temporal behavior. In addition, double-exponential decay of biexciton luminescence was observed, which is one of the characteristics of biexciton luminescence at high excitation densities. (Keyword) bound exciton / biexciton / Zeeman splitting / diamagnetic shift / time-resolved luminescence (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1571135652465545088 ● Summary page in Scopus @ Elsevier: 2-s2.0-0033706074 (CiNii: 1571135652465545088, Elsevier: Scopus)
16.	Mohamed Lachab, Masaaki Nozaki, Jie Wang, Yasuhiro Ishikawa, Qhalid Fareed, Tao Wang, Tatsunori Nishikawa, Katsushi Nishino and Shiro Sakai : Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process, Journal of Applied Physics, Vol.87, No.3, 1374-1378, 2000. (Summary) サファイア基板上に成長したGaNをSIでコートし，部分的にFIBで窓を開けることにより選択的にInGaNナノ構造を作製した．ナノ構造はMOCVD法により作製したが，窓を開けた部分にのみInGaN/GaNが成長し，その先端部分に量子細線もしくは量子ドットが形成されていることをSEMやCLによって確認した．
17.	Durga Basak, Katsushi Nishino, Qhalid RS Fareed and Shiro Sakai : Characterization of RIE etched surface of GaN using methane gas with chlorine plasma, Journal of Vacuum Science & Technology B, Vol.18, No.5, 2491-2494, 2000. (Link to Publication Site) ● Publication site (DOI): 10.1116/1.1289551 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0034266834 (DOI: 10.1116/1.1289551, Elsevier: Scopus)
18.	Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi Nishino and Shiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, 148-154, 2000.
19.	Yoichi Yamada, Chiharu Sasaki, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers, Journal of Applied Physics, Vol.86, No.12, 7186-7188, 1999.
20.	Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi Nishino and Shiro Sakai : Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999. (Summary) 昇華法によるGaNの選択横方向成長について表面モホロジーと結晶品質の成長条件依存性を調べた．成長温度が上がるにつれて，選択的に成長したストライプの断面形状が三角形から長方形に変化する様子がSEMにより確認できた．またAFMによる観察の結果，ステップ成長により二次元成長することが示された．
21.	Hong Xing Wang, Tao Wang, Mohamed Lachab, Yasuhiro Ishikawa, Maosheng Hao, Koichi Oyama, Katsushi Nishino, Shiro Sakai and Kikuo Tominaga : Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.206, No.3, 241-244, 1999.
22.	Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Magneto-luminescence spectroscopy of excitonic transitions in homoepitaxial GaN layers, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 27-30, 1999. (Link to Publication Site) ● Publication site (DOI): 10.1002/(SICI)1521-3951(199911)216:1<27::AID-PSSB27>3.0.CO;2-T (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0033242809 (DOI: 10.1002/(SICI)1521-3951(199911)216:1<27::AID-PSSB27>3.0.CO;2-T, Elsevier: Scopus)
23.	Maosheng Hao, Sourindra Mahanty, Tomoya Sugahara, Sadanori Morishima, Yusuke Takenaka, Tao Wang, Satoru Tottori, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Configuration of Dislocations in Lateral Overgrowth GaN Films, Journal of Applied Physics, Vol.85, No.9, 6497-6501, 1999. (Summary) LEO成長されたGaN膜の転位分布と光学特性を,カソードルミネッセンス法およびTEMを用いて議論した.転位分布と光放出分布は密接な関係があり,転位はバンド端発光強度に影響を及ぼすだけでなく黄色発光に著しく影響を及ぼすことを明らかにした.
24.	Durga Basak, Kenji Yamashita, Tomoya Sugahara, Qhalid Fareed, Daisuke Nakagawa, Katsushi Nishino and Shiro Sakai : Reactive ion etching of GaN and Al_xGa_1-xN using Cl₂/CH₄/Ar plasma, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.4B, 2646-2651, 1999.
25.	Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Surface morphology studies on sublimation grown bulk GaN by atomic force microscopy, Journal of Crystal Growth, Vol.200, No.3-4, 348-352, 1999.
26.	Jie Wang, Qhalid RS Fareed, Sourindra Mahanty, Satoru Tottori, Yasuhiro Ishikawa, Tomoya Sugahara, Y Morishima, Katsushi Nishino, Marek Osinski and Shiro Sakai : Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method structures Substrates, Journal of Applied Physics, Vol.85, No.3, 1895-1899, 1999.
27.	Tomoya Sugahara, Maosheng Hao, Tao Wang, Daisuke Nakagawa, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Role of Dislocation in InGaN Phase Separation, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.10B, L1195-L1198, 1998. (Summary) MOCVD成長されたサファイア上のInGaNの光学特性に対する転位の役割をカソードルミネッセンス法およびAFMを用いて議論した.転位は非発光センターとして振る舞うこと,InGaN中の相分離は混合転位によるスパイラル成長により生じることを示した.
28.	Yoshiki Naoi, Keizo Kobatake, Satoshi Kurai, Katsushi Nishino, Hisao Sato, Ken-ichi Yamashita, Masaaki Nozaki, Shiro Sakai and Yoshihiro Shintani : Characterization of Bulk GaN Grown by Sublimation Technique, Journal of Crystal Growth, Vol.189-190, 163-166, 1998. (Summary) 昇華法によりつくられたバルクGaNをX線回折,2次イオン質量分析,ラマン散乱分光および電気的特性実験により評価した.本報告で使用したバルク結晶は高い結晶完全性をもち高い純度をもつものであることを示した.
29.	Shiro Sakai, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Satoru Tottori, Maosheng Hao, Koichi Wada and Katsushi Nishino : Growth of Bulk GaN Sublimation Method, Materials Science Forum, Vol.264-268, No.PT2, 1107-1110, 1998. (Summary) 昇華法によるバルクGaN結晶製造技術およびMOCVD法によるホモエピタキシャル成長技術について検討した.バルク結晶の前処理により,ホモエピタキシャル成長後の表面モフォロジー,光学特性が大きく変化することを示した.
30.	Tomoya Sugahara, Hisao Sato, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Satoru Tottori, Kenji Yamashita, Katsushi Nishino, Katsushi Nishino and Shiro Sakai : Direct Evidence that Dislocations are Non-radiative Recombination Centers in GaN, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.4A, L398-L400, 1998. (Summary) 平面TEM観察およびカソードルミネッセンス像測定を,n型GaNにおいて同一試料·同一場所に対して行った.カソードルミネッセンス像中の暗点は,TEM像中における転位と1対1で対応することを示した.n型GaN中の正孔の拡散距離を約50nmであると評価した.GaN発光効率は,少数キャリヤの拡散長が転位の間隔よりも短いほど高くなることを実験的に明らかにした.
31.	Hisao Sato, Tomoya Sugahara, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Katsushi Nishino and Shiro Sakai : Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.2, 621-631, 1998. (Summary) 昇華法により成長されたバルクGaN上へ,有機金属気相成長法によりホモエピタキシャル成長を行い,バルク表面の前処理効果について検討した.平滑な表面をもち,強いカソードルミネッセンス光を発する試料が,バルク結晶に対して適切な前処理を施すことにより得られた.このカソードルミネッセンス光は,サファイア基板上へ成長させたGaN膜から得られるものよりも強い.また,ホモエピタキシャル膜の転位密度は,適切な前処理により,著しく減少する事を示した.
32.	Shiro Sakai, Satoshi Kurai, Katsushi Nishino, K Wada, Hisao Sato and Yoshiki Naoi : Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD, Material Research Society Symposium Proc., Vol.449, 15-22, 1997. (Summary) 昇華法によるバルクGaNおよび有機金属気相成長法によるホモエピタキシャル成長について報告している.昇華法における原料粉は,多種類のガリウム,窒素および水素化物から構成される化合物であることを示した.また,有機金属気相成長法におえる核発生制御手法について検討した.六角形柱状結晶が選択的に形成され,本手法がデバイスプロセスに応用できることを示した.
33.	Tatsuya Okada, Satoshi Kurai, Yoshiki Naoi, Katsushi Nishino, Fukuji Inoko and Shiro Sakai : Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.10, 1318-1320, 1996. (Summary) 昇華法で作製したGaN単結晶上にGaN膜をMOCVD法でホモエピ成長させた．FIB法により加工して電子線が透過する部分を壁状に加工し，結晶内の転位をTEMにより観察した．また，この観察結果に基づき，GaN単結晶内の転位密度を推定した．
34.	Ichiro Shimizu, Satoshi Wada, Toshiya Okahisa, Masako Kamamura, Mitsuyasu Yano, Tsukasa Kodaira, Katsushi Nishino, Kenji Shima and Susumu Ito : Radioimmunoreactive plasma bradykinin levels and histological changes during the course of cerulein-induced pancreatitis in rats., Pancreas, Vol.8, No.2, 220-225, 1993. (Summary) The plasma bradykinin (BK) and serum amylase levels and histological changes in rats during the course of acute pancreatitis induced by a large dose of cerulein were examined. Animals were given four intraperitoneal injections of 20 micrograms/kg body wt of cerulein at hourly intervals. The plasma concentration of BK-like immunoreactivity (BK-LI), measured by a highly sensitive and specific radioimmunoassay established in this study, was found to reach a peak 6 h after the first injection of cerulein and then to remain elevated. On the other hand, the serum amylase and the histological alterations (i.e., interstitial edema, vacuolization, and inflammatory infiltration) were maximal 9 h after the first injection and returned to nearly normal after 24 h. These observations suggest that the BK generation is indicative of the participation of the kallikrein-kinin system in the pathophysiological change and that the plasma BK-LI level is a good marker of cellular damage and inflammation within the pancreas during the course of acute pancreatitis. (Keyword) Acute Disease / Amylases / Animals / Bradykinin / Caerulein / Immune Sera / Male / Pancreatitis / Radioimmunoassay / Rats / Rats, Wistar / Sensitivity and Specificity (Link to Search Site for Scientific Articles) ● PubMed @ National Institutes of Health, US National Library of Medicine (PMID): 7681581 ● Search Scopus @ Elsevier (PMID): 7681581 (PubMed: 7681581)

Academic Letter:

1.	Katsushi Nishino, Jun Nakauchi, Kotaro Hayashi and Masashi Tsukihara : Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer, Japanese Journal of Applied Physics, Vol.52, 08JA07-1-08-JA07-2, 2013. (Summary) AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN. (Link to Publication Site) ● Publication site (DOI): 10.7567/JJAP.52.08JA07 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360847874817560320 ● Summary page in Scopus @ Elsevier: 2-s2.0-84883136889 (DOI: 10.7567/JJAP.52.08JA07, CiNii: 1360847874817560320, Elsevier: Scopus)
2.	Fawang Yan, Katsushi Nishino and Shiro Sakai : Growth and Characteristics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.27, L697-L700, 2006. (Summary) With the advantages of low cost, simplicity, and scalability, a direct reaction using gallium (Ga) and ammonia (NH3) has been employed to deposit GaN film on a (0001) sapphire substrate. We find that only GaN crystallites with diameters in the range of 0.4-5 μm are sparsely deposited on a bare (0001) sapphire substrate. To increase the density of the GaN nucleation site and thus form continuous GaN film, a 50-nm-thick AlN layer [grown on the (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) at 1150 °C in a pulsed manner] is used as a template layer. Plan-view scanning electron microscopy (SEM) and cross-sectional SEM experimental results show that the GaN film has a specular smooth surface and that the film thickness is about 10 μm after 1 h deposition. X-ray diffraction (XRD) and cathodoluminescence (CL) experimental results indicate that the formed GaN film is of single crystals with a hexagonal structure. The full widths at half-maximum (FWHM) of the (002) and (102) X-ray rocking curves are 420 and 556 arcsec, respectively. Our experimental results demonstrate that the growth of high-quality and thick GaN film via a direct reaction is possible. (Keyword) gallium nitride / nucleation density (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.45.L697 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1521136280203562112 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.45.L697 (DOI: 10.1143/JJAP.45.L697, CiNii: 1521136280203562112)
3.	Sung Hoon Chung, Mohamed Lachab, Tao Wang, Yves Lacroix, Durga Basak, Qhalid Fareed, Yoshihisa Kawakami, Katsushi Nishino and Shiro Sakai : Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.39, No.8, 4749-4750, 2000. (Summary) Mgドープp形GaNの活性化アニール中に雰囲気の窒素に酸素を混ぜることで，p形GaNのホール密度などの電気的特性が向上することを見出した．SIMS等による解析の結果，酸素がp形GaN中の水素と反応し，Mgアクセプタを活性化していることがわかった． (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0034244706 (Elsevier: Scopus)
4.	Maosheng Hao, Sourindra Mahanty, Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Infrared properties of bulk GaN, Applied Physics Letters, Vol.74, No.19, 2788-2790, 1999. (Link to Publication Site) ● Publication site (DOI): 10.1063/1.124014 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0032614890 (DOI: 10.1063/1.124014, Elsevier: Scopus)
5.	Durga Basak, Kenji Yamashita, Tomoya Sugahara, Daisuke Nakagawa, Qhalid RS Fareed, Katsushi Nishino and Shiro Sakai : Selective etching of GaN over AlxGa1-xN using Reactive Ion Plasma of Cl2/CH4/Ar gas Mixture, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.1A, 42-43, 1999. (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.38.42 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0032686351 (DOI: 10.1143/JJAP.38.42, Elsevier: Scopus)
6.	Satoshi Kurai, Katsushi Nishino and Shiro Sakai : Nucleation Control in the Growth of Bulk GaN by Sublimation Method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.36, No.2B, 184-186, 1997. (Keyword) sublimation / GaN / bulk / nucleation control / density of nuclei (Link to Publication Site) ● Publication site (DOI): 10.1143/jjap.36.l184 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282681227090688 ● Search Scopus @ Elsevier (DOI): 10.1143/jjap.36.l184 (DOI: 10.1143/jjap.36.l184, CiNii: 1390282681227090688)

Review, Commentary:

1.	Katsushi Nishino and Shiro Sakai : 昇華法によるGaN単結晶育成, Journal of the Japanese Association for Crystal Growth, Vol.25, No.4, 19-24, Apr. 1998.

Proceeding of International Conference:

1.	Yuki Naito, Souma Nishio and Katsushi Nishino : Vacuum Evaporation of BaSi2 Thin Films on Textured Si (100) Substrates, The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019, Miyazaki, Jul. 2019.
2.	Takaya Shimada and Katsushi Nishino : Characterization of dislocations in sublimation-grown AlN crystals, 4th International Forum on Advanced Technologies, Tokushima, Mar. 2018.
3.	Ryo Hiramura and Katsushi Nishino : Crystal Growth of Gallium Oxide by Direct Synthesis Method, 4th International Forum on Advanced Technologies, Tokushima, Mar. 2018.
4.	Mitsuaki Suda, Katsushi Nishino, Satoshi Kurai and Yoichi Yamada : CL measurement of AlGaN grown on the off-oriented AlN substrate, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Mar. 2014.
5.	YUICHI HIWASA, SHOTA IWAMOTO, KOTARO HAYASHI, Katsushi Nishino and MASASHI TSUKIHARA : Self-separation of sublimation-grown AlN on rough SiC substrate, 5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials, Jan. 2013.
6.	Katsushi Nishino, Jun Nakauchi, Kotaro Hayashi and Masashi Tsukihara : Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer, International Workshop on Nitride Semiconductors, Sapporo, Oct. 2012.
7.	Katsushi Nishino, Yuusuke Sawai, Yuji Nariyuki, Takeshi Noda, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : TEM Observation of Re-Grown GaN on Nano-Patterned GaN Template, The 37th International Symposium on Compound Semiconductors, FrP77, Takamatsu, Jun. 2010.
8.	Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Second International Symposium on Growth of III-Nitrides, MO-44, Izu, Jul. 2008.
9.	M Tohno, T Okimoto, Yoshiki Naoi, Katsushi Nishino, Shiro Sakai, T Kusuura, A Mitra, S Nouda, M Kimura, S Kawano and Y Muramoto : GaN-LED's on nano-etched sapphire substrate by metal organic chemical vapor deposition, The first International conference on White Light-Emitting Diodes(LEDs) and Solid State Lighting (SSL), Tokyo, Nov. 2007.
10.	T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition, The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Oct. 2007.
11.	K. Ikeda, R. Matsuoka, T. Hama, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, M. Koike and S.M. Lee : An a-GaN and an a-InGaN on r-Sapphire by Relatively High Temperature Metal organic Chemical Vapor Deposition, The 3rd Asia-Pacific Workshop on Widegap Semiconductors, Jeonju, Mar. 2007.
12.	Katsushi Nishino, A. Sakamoto and Shiro Sakai : Growth of Thick a-plane GaN on r-plane Sapphire by Direct Synthesis Method, International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
13.	Yoshiki Naoi, K. Ikeda, T. Hama, R.J. Choi, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee : Investigation of InGaN films on a-plane GaN grown by metal organic chemical vapor deposition technique, International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
14.	Yoshiki Naoi, K. Ono, K. Ikeda, R.J. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee : Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate, International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
15.	M. Tsukihara, K. Sumiyoshi, T. Okimoto, K. Kataoka, S. Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition, First International Symposium on Growth of III-Nitrides, Linkoping, Jun. 2006.
16.	S. Kawamichi, Katsushi Nishino, K. Sumiyoshi, M. Tsukihara and Shiro Sakai : Inversion domains in AlGaN films grown on patterned sapphire substrate, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
17.	K. Ikeda, R.J. Choi, T. Fukumoto, K. Ono, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Visible light emitting diode using a-plane GaN on r-sapphire substrate with an InAlN buffer layer and a high temperature atomic layer epitaxy, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
18.	K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N film with middle temperature intermediate layer grown on trenched sapphire substrate by MOCVD, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
19.	R.J. Choi, Shiro Sakai, Yoshiki Naoi, Katsushi Nishino, M. Koike and S.M. Lee : Efficient non-polar a-plane light-emitting-diodes grown using AlInNbuffer and intermediate layer, 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, May 2006.
20.	Maosheng Hao, Sourindra Mahanty, Y Morishima, Hironori Takenaka, Jie Wang, Satoru Tottori, Masaaki Nozaki, Yasuhiro Ishikawa, Tomoya Sugahara, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Stacking Fault and Its Effect on the GaN Epitaxial Growth, Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, Vol.xxvi+892, 675-680, Nara, Jan. 1999. (Summary) 様々な手法を用いて成長されたGaNをTEMにより評価し,積層欠陥の振る舞いについて議論した.
21.	Maosheng Hao, Tomoya Sugahara, Satoru Tottori, Masaaki Nozaki, Satoshi Kurai, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Correlation between Dislocations and Luminescence in GaN, Proceedings of SPIE, Vol.3419, 138-145, Taipei, Jul. 1998. (Summary) MOCVD成長されたGaNについて,その転位と光学特性の相関を,カソードルミネッセンス法およびTEM観察により調査した.点欠陥が黄色発光の起源であることおよび転位よりも光学特性におおきな影響を与えることを示した.

Proceeding of Domestic Conference:

1.	Ryoga Matsuoka and Katsushi Nishino : 真空蒸着法による n 型 Si 基板上への BaSi2 薄膜成長, 令和4年度電気・電子・情報関係学会四国支部連合大会, 11-10, Sep. 2022. (Keyword) BaSi2 / solar cell
2.	Ryu Shimoura and Katsushi Nishino : ガラス基板上へのβ-Ga2O3ナノワイヤの作製, 令和4年度電気・電子・情報関係学会四国支部連合大会, 11-9, Sep. 2022. (Keyword) Ga2O3 / nanowire
3.	Katsushi Nishino, Shunnosuke Mori, Sonoka Yamashita and Kyoka U : 真空蒸着法により作製した BaSi2膜におけるクラックの低減および厚膜化の試み, 第83回応用物理学会秋季学術講演会, 23a-C101-4, Sep. 2022. (Keyword) BaSi2 / solar cell
4.	Kohei Takata and Katsushi Nishino : 直接合成法によるβ-Ga2O3薄膜成長における高品質化に向けた検討, 第83回応用物理学会秋季学術講演会, 20p-B203-5, Sep. 2022. (Keyword) Ga2O3
5.	日野友哉 and Katsushi Nishino : 直接合成法によるβ-Ga2O3ナノワイヤの作製, 第82回応用物理学会秋季学術講演会, 23p-P12-11, Sep. 2021. (Keyword) Ga2O3 / nanowire
6.	秋山大介, Yu Kawasaki, Yutaka Kishimoto, Ko-ichi Magishi, Koichi Nakamura, Katsushi Nishino, 何長振 and 伊藤満 : スピンギャップを持つ擬一次元系交代鎖BaCu2V2O8のNMR, 日本物理学会秋季大会, Sep. 2021.
7.	安原遼 and Katsushi Nishino : 昇華法によるN面AlN基板上への厚膜AlNの結晶成長, 2021年度応用物理・物理系学会中国四国支部合同学術講演会, Gp-7, Jul. 2021.
8.	森哲哉 and Katsushi Nishino : 温度変調した昇華法によるAlNの結晶成長, 2021年度応用物理・物理系学会中国四国支部合同学術講演会, Gp-6, Jul. 2021.
9.	神谷大樹 and Katsushi Nishino : テクスチャSi基板上に真空蒸着法で堆積したBaSi2膜の評価, 2021年度応用物理・物理系学会中国四国支部合同学術講演会, Fa-7, Jul. 2021.
10.	西尾聡馬, 森俊之輔 and Katsushi Nishino : Effect of in situ annealing on BaSi2 evaporated films with low deposition rate, 第68回応用物理学会春季学術講演会, 16a-Z23-8, Mar. 2021.
11.	森俊之輔, 西尾聡馬 and Katsushi Nishino : Effect of low-rate-growth of BaSi2 thin film on film quality, 第81回応用物理学会秋季学術講演会, 11a-Z01-2, Sep. 2020.
12.	神元将太 and Katsushi Nishino : Effect of supply temperature in crystal growth of β-Ga2O3 by direct synthesis method, 第81回応用物理学会秋季学術講演会, 9p-Z20-7, Sep. 2020.
13.	辻航平 and Katsushi Nishino : Investigation of supply gas flow rate in crystal growth of β-Ga2O3 by direct synthesis method, 2020年度応用物理・物理系学会中国四国支部合同学術講演会, Ea-4, Aug. 2020.
14.	Souma Nishio, Yuki Naito and Katsushi Nishino : 蒸着中の原料状態がBaSi2薄膜の品質に与える影響, 第80回応用物理学会秋季学術講演会, 21a-PA3-6, Sep. 2019.
15.	Shoki Senoo and Katsushi Nishino : AlN 結晶成長における基板表面酸化膜除去の効果, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, 11-13, Sep. 2018.
16.	Yuki Naito and Katsushi Nishino : 真空蒸着法による p 型 Si 基板上への BaSi2 膜作製の検討, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, 11-12, Sep. 2018.
17.	Yuta Ichimura and Katsushi Nishino : 直接合成法によるβ-Ga2O3の結晶成長, 第79回応用物理学会秋季学術講演会, 19p-PB8-18, Sep. 2018.
18.	Kohki Edazawa, Sho Uranishi, Takuro Tomita and Katsushi Nishino : AlN結晶のアニール処理による機械的ダメージの回復評価, 第79回応用物理学会秋季学術講演会, 19p-PA4-1, Sep. 2018.
19.	Naoya Takikawa and Katsushi Nishino : AlN growth by sublimation method using peeled AlN as seed crystal, 2016年度応用物理・物理系学会中国四国支部合同学術講演会, 88, Jul. 2016.
20.	Kiyoto Nashiki and Katsushi Nishino : Growth of bulk AlN crystal on 6H-SiC substrate, 2016年度応用物理・物理系学会中国四国支部合同学術講演会, 87, Jul. 2016.
21.	Ryuji Hashimoto, Yudai Suzuki and Katsushi Nishino : Growth of AlGaN films by MOCVD on sublimation-grown AlN substrates, 2016年度応用物理・物理系学会中国四国支部合同学術講演会, 86, Jul. 2016.
22.	Suzuki Yudai and Katsushi Nishino : Surface treatment of AlN substrates for growth of AlGaN films by MOCVD, 2015年度応用物理・物理系学会中国四国支部合同学術講演会, Da-6, Aug. 2015.
23.	Yamamoto Yuki and Katsushi Nishino : Effect of tantalum mask on AlN crystal growth by sublimation method, 2015年度応用物理・物理系学会中国四国支部合同学術講演会, Ca-1, Aug. 2015.
24.	Takayoshi Shodai and Katsushi Nishino : 昇華法におけるAlN結晶成長速度の向上に関する検討, 2014年度応用物理・物理系学会中国四国支部合同学術講演会, Jul. 2014.
25.	Yuichi Hiwasa, Kotaro Hayashi and Katsushi Nishino : 荒れた6H-SiC基板へ昇華法により成長したAlNの剥離機構, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会, FR18, Jun. 2013.
26.	小渕圭一朗, Kotaro Hayashi and Katsushi Nishino : 昇華法によるAlN成長における初期過程の検討, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会, FR17, Jun. 2013.
27.	金度亨, 李熙燮, 山住和也, Katsushi Nishino and Shiro Sakai : P-type conduction mechanism in Carbon-doped AlGaN, 第60 回応用物理学会春季学術講演会講演予稿集, 28p-PA1-29, Mar. 2013.
28.	Katsushi Nishino, HIWASA YUICHI, IWAMOTO SHOTA, HAYASHI KOTARO and TSUKIHARA MASASHI : 昇華法による荒れたSiC基板上へのAlN成長, 第60回応用物理学会春季学術講演会, Mar. 2013.
29.	Kotaro Hayashi, Jun Nakauchi, Katsushi Nishino and Masashi Tsukihara : AlSiN層を用いた昇華法成長AlNの剥離, 第73回応用物理学会学術講演会, 12a-PB4-4, Sep. 2012.
30.	加藤保洋, 中内潤, Katsushi Nishino, 月原政志 and Shiro Sakai : 昇華法によるバルクAlNの成長, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, 11-3, Sep. 2010.
31.	Katsushi Nishino : 直接合成法によるa面GaNの結晶成長, LED総合フォーラム, P20, Apr. 2010.
32.	Katsushi Nishino, 澤井佑介, 成行祐児, 野田丈嗣, Yoshiki Naoi, Shiro Sakai, 深野敦之 and 田中覚 : ナノ加工GaN基板上再成長層のTEM観察, 第57回応用物理学関係連合講演会, 19a-TB2, Mar. 2010.
33.	結城勇介, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : 直接合成法を用いたa 面GaN 結晶成長のためのNH3 流量の検討, 平成20年度電気関係学会四国支部連合大会, 11-2, Sep. 2008.
34.	加藤篤, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : SiO2 を斜め蒸着した凹凸GaN テンプレート上へのGaN成長, 平成20年度電気関係学会四国支部連合大会, 11-1, Sep. 2008.
35.	松岡遼, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : ストライプ状金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長, 2008年(平成20年)秋季第69回応用物理学会学術講演会, 2a-CA-8, Sep. 2008.
36.	松岡遼, 沖本聖, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : 金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長, 2008年(平成20年)春季第55回応用物理学会連合講演会, 29p-B-18, Mar. 2008.
37.	沖本聖, 遠野充明, 南部紗織, 北村政治, 月原政志, 片岡研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN系紫外発光ダイオードの光出力に及ぼす電極形状の影響に関する研究, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-29, Sep. 2007.
38.	仁木貴敏, 片岡研, 月原政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : MOCVD成長AlGaNのMgドーピングによる結晶性への影響, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-22, Sep. 2007.
39.	松岡遼, 池田賢司, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : オフ角r面サファイア基板上にMOCVD法によるa面GaNのX線回折による評価, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-14, Sep. 2007.
40.	加藤篤, 月原政志, 片岡研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : UV-LED用高Al組成AlGaN結晶の高品質化に関する研究, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-11, Sep. 2007.
41.	遠野充明, 沖本聖, Yoshiki Naoi, Katsushi Nishino, 楠浦崇央, ミトラアヌパム, 納田卓, 木村真大, 川野俊輔 and 村本宣彦 : ナノ・エッチングしたサファイア基板上へのGaN-LEDのMOCVD成長, Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-5, Sep. 2007.
42.	遠野充明, 沖本聖, 加藤篤, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, 楠浦崇央 and ミトラアヌパム : ナノ・エッチングしたサファイア上へのGaNのMOCVD成長, 第68回応用物理学会学術講演会, Sep. 2007.
43.	松岡遼, 池田賢司, 濱敬重, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Rakjun Choi, S.M. Lee and 小池正好 : MOCVDにより直接高温成長した高品質a面GaN・InGaN結晶成長, 第54回応用物理学会学術講演会, Mar. 2007.
44.	濱敬重, 小野耕大, 池田賢司, Rakjun Choi, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, S.M. Lee and 小池正好 : a面バルクGaNおよびr面サファイア上a面GaNに作製した青色発光ダイオード, 第67回応用物理学会学術講演会, Sep. 2006.
45.	片岡研, 沖本聖, 仁木貴敏, 住吉和英, 月原政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : SiNを用いたAlInGaN系紫外LED高出力化の検討, 第67回応用物理学会学術講演会, Sep. 2006.
46.	池田賢司, Rakjun Choi, 福本哲也, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, 小池正好 and S.M. Lee : a面成長InGaN/GaN LEDにおけるInGaN活性層の解析, 第67回応用物理学会学術講演会, Aug. 2006.
47.	Katsushi Nishino, 宮村高史 and Shiro Sakai : TMA添加直接合成法によるバルクAlGaNの結晶成長, 第67回応用物理学会学術講演会, Aug. 2006.
48.	Katsushi Nishino, 坂本旭 and Shiro Sakai : 直接合成法によるr面サファイア上へのバルクa-GaN成長, 第67回応用物理学会学術講演会, Aug. 2006.
49.	仁木貴敏, 月原政志, 沖本聖, 住吉和英, 片岡研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : 中間温度成長AlGaN層と多重量子井戸(MQW)層によるMOCVD成長AlGaN中の転位低減, 応用物理学会中国四国支部，日本物理学会中国支部・四国支部，日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 144, Jul. 2006.
50.	沖本聖, 月原政志, 住吉和英, 片岡研, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai and Shiro Sakai : 低温成長層の導入によるAlGaNの高品質化, 応用物理学会中国四国支部，日本物理学会中国支部・四国支部，日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 142, Jul. 2006.
51.	池田賢司, Choi Rak-Jun, 福本哲也, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Lee Min Soo and 小池正好 : AlInN-buffer層上のALEによるa面GaNの高品質化, 第53回応用物理学会学術振興会講演予稿集, Vol.26, 401, Mar. 2006.
52.	河道修一, Katsushi Nishino, 住吉和英, 月原政志 and Shiro Sakai : 凹凸サファイア基板上に成長させたAlGaN薄膜の反転ドメイン, 第53回応用物理学会学術振興会講演予稿集, Vol.25, 379, Mar. 2006.
53.	住吉和英, 月原政志, 沖本聖, 河道修一, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : 低温中間層を用いた加工サファイア基板上のAl0.17Ga0.83N MOCVD成長, 第53回応用物理学会学術振興会講演予稿集, Vol.25, 378, Mar. 2006.
54.	山本真美子, 月原政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : フラックス成長BP結晶上へのGaN成長, 第53回応用物理学会学術振興会講演予稿集, Vol.22, 346, Mar. 2006.
55.	住吉和英, Shiro Sakai, Yoshiki Naoi and Katsushi Nishino : 窒化物半導体と紫外発光デバイス, 第7回IEEE広島支部学生シンポジウム(HISS), Nov. 2005.
56.	河道修一, 住吉和英, 月原政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : 加工サファイア上に成長したAl0.07Ga0.93N薄膜の透過型電子顕微鏡による評価, --- The dislocation measurement of in Al0.07Ga0.93N film on patterned sapphire substrate by TEM ---, 電気関係学会四国支部連合大会, 150, Sep. 2005.
57.	山本真美子, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : フラックス法によるBP結晶成長, --- Crystal Growth of BP by Flux Method ---, 電気関係学会四国支部連合大会, 151, Sep. 2005.

Et cetera, Workshop:

1.	Takuro Tomita and Katsushi Nishino : 半導体工学基礎におけるピンポン玉を用いた数式の可視化について, 教育シンポジウム2024, No.4, Jan. 2024.
2.	雄二大来, 札野順, Naoyuki Shimomura and Katsushi Nishino : 電気学会の新事例集を用いた技術者倫理教育実践, The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-14, No.3, 43-48, Dec. 2014.
3.	Yuusuke Takashima, Ryo Shimizu, 北村彩人, Katsushi Nishino, Yoshiki Naoi, Naoyuki Shimomura and 雄二大来 : Learning Effects of the Regional Case Study on Engineering's Ethics, The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-13, No.3, 31-35, Dec. 2013.
4.	Katsushi Nishino and Yoshiki Naoi : 電気電子工学科基礎科目における再履修生を対象とした授業の試み, 工学教育シンポジウム2010(SEE2010), Mar. 2010.
5.	遠野充明, 沖本聖, Yoshiki Naoi, Katsushi Nishino, Shiro Sakai, 楠浦崇央, ミトラアムパム, 納田卓, 木村真大, 川野俊輔 and 村本宣彦 : ナノ微細加工サファイア基板上へのGaN系発光ダイオードの作製, 第1回フロンティア研究センターシンポジウム, Vol.P3, Dec. 2007.
6.	松岡遼, 池田賢司, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : オフ角r面サファイア上MOCVD成長a面GaNのX線回折評価, 第1回フロンティア研究センターシンポジウム, Vol.P2, Dec. 2007.
7.	北村政治, 沖本聖, 遠野充明, 南部紗織, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : 340nm帯ナイトライド系 UV-LEDの自己発熱と電流集中効果による発光特性への影響, 第1回フロンティア研究センターシンポジウム, Vol.P1, Dec. 2007.
8.	K Kataoka, M Tsukihara, T Niki, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : The segragation and saturation phenomena of Mg concentration in AlGaN, 26th Electronic Materials Symposium (EMS-26), Vol.H7, Jul. 2007.
9.	R Matsuoka, K Ikeda, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Chracterization of a-plane MOCVD-grown GaN on off-angle r-plane sapphire substrates, 26th Electronic Materials Symposium (EMS-26), Vol.E12, Jul. 2007.

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

Bulk growth of AlGaN by direct synthesis method with Alsource (Project/Area Number: 18560308 )
MATERIAL SCIENCE AND APPLICATION OF ALLOY NITRIC SEMICONDUCTORS (Project/Area Number: 11102005 )
バルクGaNの大型結晶成長およびデバイス応用 (Project/Area Number: 10750235 )
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Associate Professor : Nishino, Katsushi

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Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)