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Research Activity

Field of Study

Semiconductor Physical Electronics

Subject of Study

AlN等窒化物半導体の結晶成長,物性評価,デバイス応用 (AlN, バルク結晶成長, 物性評価)

Book / Paper

Academic Paper (Judged Full Paper):

1.Yuji Nariyuki, Masakazu Matsumot, Takeshi Noda, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2121-2123, 2010.
(DOI: 10.1002/pssc.200983481)
2.Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate,
Journal of Crystal Growth, Vol.311, No.10, 2847-2849, 2009.
(DOI: 10.1016/j.jcrysgro.2009.01.027)
3.T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.5, No.9, 3066-3068, 2008.
(DOI: 10.1002/pssc.200779205)
4.M Tsukihara, K Sumiyoshi, T Okimoto, K Kataoka, S Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition,
Journal of Crystal Growth, Vol.300, No.1, 190-193, 2007.
(DOI: 10.1016/j.jcrysgro.2006.11.011)
5.K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Al0.17Ga0.83N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Vol.46, No.2, 491-495, 2007.
(DOI: 10.1143/JJAP.46.491,   CiNii: 10018544667)
6.Kazuhide Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Shuichi Kawamichi, Tadashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Al0.17Ga0.83N film with Middle Temperature Intermediate Layer Grown on Trenched Sapphire Substrate by MOCVD,
Journal of Crystal Growth, Vol.298, No.SI, 300-304, 2007.
(DOI: 10.1016/j.jcrysgro.2006.10.031)
7.Yoshiki Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, S. M. Lee and M. Koike :
Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2810-2813, 2007.
(DOI: 10.1002/pssc.200674826)
8.Katsushi Nishino, A. Sakamoto and Shiro Sakai :
Growth of thich a-plane GaN on r-plane sapphire by direct synthesis method,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2532-2535, 2007.
(DOI: 10.1002/pssc.200674785)
9.Shuichi Kawamichi, Katsushi Nishino, Kazuhide Sumiyoshi, Masashi Tsukihara, Fanwang Yan and Shiro Sakai :
Inversion domain in AlGaN films grown on patterned sapphire substrate,
Journal of Crystal Growth, Vol.298, 297-299, 2007.
(DOI: 10.1016/j.jcrysgro.2006.10.030)
10.R.J. Choi, S. Kubo, M. Tsukihara, K. Inoue, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Effects of V/III flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.2, No.7, 2149-2152, 2005.
(DOI: 10.1002/pssc.200461442,   Elsevier: Scopus)
11.Katsushi Nishino, Daigo Kikuta and Shiro Sakai :
Bulk GaN growth by direct synthesis method,
Journal of Crystal Growth, Vol.237-239, No.0, 922-925, 2002.
(DOI: 10.1016/S0022-0248(01)02079-6)
12.Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai :
Optical properties of bound excitons and biexcitons in GaN,
IEICE Transactions on Electronics, Vol.E83-C, No.4, 605-611, 2000.
(CiNii: 110003211878,   Elsevier: Scopus)
13.Mohamed Lachab, Masaaki Nozaki, Jie Wang, Yasuhiro Ishikawa, Qhalid Fareed, Tao Wang, Tatsunori Nishikawa, Katsushi Nishino and Shiro Sakai :
Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process,
Journal of Applied Physics, Vol.87, No.3, 1374-1378, 2000.
14.Durga Basak, Katsushi Nishino, Qhalid RS Fareed and Shiro Sakai :
Characterization of RIE etched surface of GaN using methane gas with chlorine plasma,
Journal of Vacuum Science & Technology B, Vol.18, No.5, 2491-2494, 2000.
(DOI: 10.1116/1.1289551,   Elsevier: Scopus)
15.Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi Nishino and Shiro Sakai :
Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor,
Journal of Crystal Growth, Vol.218, 148-154, 2000.
16.Yoichi Yamada, Chiharu Sasaki, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai :
Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers,
Journal of Applied Physics, Vol.86, No.12, 7186-7188, 1999.
17.Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi Nishino and Shiro Sakai :
Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method,
Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999.
18.Hong Xing Wang, Tao Wang, Mohamed Lachab, Yasuhiro Ishikawa, Maosheng Hao, Koichi Oyama, Katsushi Nishino, Shiro Sakai and Kikuo Tominaga :
Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition,
Journal of Crystal Growth, Vol.206, No.3, 241-244, 1999.
19.Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai :
Magneto-luminescence spectroscopy of excitonic transitions in homoepitaxial GaN layers,
Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 27-30, 1999.
(DOI: 10.1002/(SICI)1521-3951(199911)216:1<27::AID-PSSB27>3.0.CO;2-T,   Elsevier: Scopus)
20.Maosheng Hao, Sourindra Mahanty, Tomoya Sugahara, Sadanori Morishima, Yusuke Takenaka, Tao Wang, Satoru Tottori, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Configuration of Dislocations in Lateral Overgrowth GaN Films,
Journal of Applied Physics, Vol.85, No.9, 6497-6501, 1999.
21.Durga Basak, Kenji Yamashita, Tomoya Sugahara, Qhalid Fareed, Daisuke Nakagawa, Katsushi Nishino and Shiro Sakai :
Reactive ion etching of GaN and AlxGa1-xN using Cl2/CH4/Ar plasma,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.4B, 2646-2651, 1999.
22.Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai :
Surface morphology studies on sublimation grown bulk GaN by atomic force microscopy,
Journal of Crystal Growth, Vol.200, No.3-4, 348-352, 1999.
23.Jie Wang, Qhalid RS Fareed, Sourindra Mahanty, Satoru Tottori, Yasuhiro Ishikawa, Tomoya Sugahara, Y Morishima, Katsushi Nishino, Marek Osinski and Shiro Sakai :
Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method structures Substrates,
Journal of Applied Physics, Vol.85, No.3, 1895-1899, 1999.
24.Yoshiki Naoi, Keizo Kobatake, Satoshi Kurai, Katsushi Nishino, Hisao Sato, Ken-ichi Yamashita, Masaaki Nozaki, Shiro Sakai and Yoshihiro Shintani :
Characterization of Bulk GaN Grown by Sublimation Technique,
Journal of Crystal Growth, Vol.189-190, 163-166, 1998.
25.Shiro Sakai, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Satoru Tottori, Maosheng Hao, Koichi Wada and Katsushi Nishino :
Growth of Bulk GaN Sublimation Method,
Materials Science Forum, Vol.264-268, No.PT2, 1107-1110, 1998.
26.Hisao Sato, Tomoya Sugahara, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Katsushi Nishino and Shiro Sakai :
Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.2, 621-631, 1998.
27.Shiro Sakai, Satoshi Kurai, Katsushi Nishino, K Wada, Hisao Sato and Yoshiki Naoi :
Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD,
Material Research Society Symposium Proc., Vol.449, 15-22, 1997.
28.Ichiro Shimizu, Satoshi Wada, Toshiya Okahisa, Masako Kamamura, Mitsuyasu Yano, Tsukasa Kodaira, Katsushi Nishino, Kenji Shima and Susumu Ito :
Radioimmunoreactive plasma bradykinin levels and histological changes during the course of cerulein-induced pancreatitis in rats.,
Pancreas, Vol.8, No.2, 220-225, 1993.
(PubMed: 7681581)

Academic Letter:

1.Katsushi Nishino, Jun Nakauchi, Kotaro Hayashi and Masashi Tsukihara :
Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer,
Japanese Journal of Applied Physics, Vol.52, 08JA07-1-08-JA07-2, 2013.
(DOI: 10.7567/JJAP.52.08JA07,   CiNii: 210000142592,   Elsevier: Scopus)
2.M Yamamoto, Y Hamazaki, M Tsukihara, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.46, No.14, L323-L325, 2007.
(DOI: 10.1143/JJAP.46.L323,   CiNii: 210000063916)
3.Fawang Yan, Katsushi Nishino and Shiro Sakai :
Growth and Characteristics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.27, L697-L700, 2006.
(DOI: 10.1143/JJAP.45.L697,   CiNii: 10017653514)
4.Takashi Okimoto, Masashi Tsukihara, Kazuhide Sumiyoshi, Ken Kataoka, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.8, L236-L238, 2006.
(DOI: 10.1143/JJAP.45.L236,   CiNii: 210000061816)
5.Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Hong-Dong Li, Hisao Sato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.10A, L1037-L1039, 2002.
(DOI: 10.1143/JJAP.41.L1037,   CiNii: 110006350816)
6.Sung Hoon Chung, Mohamed Lachab, Tao Wang, Yves Lacroix, Durga Basak, Qhalid Fareed, Yoshihisa Kawakami, Katsushi Nishino and Shiro Sakai :
Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.39, No.8, 4749-4750, 2000.
(Elsevier: Scopus)
7.Maosheng Hao, Sourindra Mahanty, Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai :
Infrared properties of bulk GaN,
Applied Physics Letters, Vol.74, No.19, 2788-2790, 1999.
(DOI: 10.1063/1.124014,   Elsevier: Scopus)
8.Durga Basak, Kenji Yamashita, Tomoya Sugahara, Daisuke Nakagawa, Qhalid RS Fareed, Katsushi Nishino and Shiro Sakai :
Selective etching of GaN over AlxGa1-xN using Reactive Ion Plasma of Cl2/CH4/Ar gas Mixture,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.1A, 42-43, 1999.
9.Tomoya Sugahara, Maosheng Hao, Tao Wang, Daisuke Nakagawa, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Role of Dislocation in InGaN Phase Separation,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.10B, L1195-L1198, 1998.
10.Tomoya Sugahara, Hisao Sato, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Satoru Tottori, Kenji Yamashita, Katsushi Nishino, Katsushi Nishino and Shiro Sakai :
Direct Evidence that Dislocations are Non-radiative Recombination Centers in GaN,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.4A, L398-L400, 1998.
11.Satoshi Kurai, Katsushi Nishino and Shiro Sakai :
Nucleation Control in the Growth of Bulk GaN by Sublimation Method,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.36, No.2B, 184-186, 1997.
12.Tatsuya Okada, Satoshi Kurai, Yoshiki Naoi, Katsushi Nishino, Fukuji Inoko and Shiro Sakai :
Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.10, 1318-1320, 1996.

Review, Commentary:

1.Katsushi Nishino and Shiro Sakai :
昇華法によるGaN単結晶育成,
Journal of the Japanese Association for Crystal Growth, Vol.25, No.4, 19-24, Apr. 1998.

Proceeding of International Conference:

1.Takaya Shimada and Katsushi Nishino :
Characterization of dislocations in sublimation-grown AlN crystals,
4th International Forum on Advanced Technologies, Tokushima, Mar. 2018.
2.Ryo Hiramura and Katsushi Nishino :
Crystal Growth of Gallium Oxide by Direct Synthesis Method,
4th International Forum on Advanced Technologies, Tokushima, Mar. 2018.
3.Mitsuaki Suda, Katsushi Nishino, Satoshi Kurai and Yoichi Yamada :
CL measurement of AlGaN grown on the off-oriented AlN substrate,
6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Mar. 2014.
4.YUICHI HIWASA, SHOTA IWAMOTO, KOTARO HAYASHI, Katsushi Nishino and MASASHI TSUKIHARA :
Self-separation of sublimation-grown AlN on rough SiC substrate,
5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials, Jan. 2013.
5.Katsushi Nishino, Jun Nakauchi, Kotaro Hayashi and Masashi Tsukihara :
Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer,
International Workshop on Nitride Semiconductors, Sapporo, Oct. 2012.
6.Katsushi Nishino, Yuusuke Sawai, Yuji Nariyuki, Takeshi Noda, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka :
TEM Observation of Re-Grown GaN on Nano-Patterned GaN Template,
The 37th International Symposium on Compound Semiconductors, FrP77, Takamatsu, Jun. 2010.
7.Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate,
Second International Symposium on Growth of III-Nitrides, MO-44, Izu, Jul. 2008.
8.M Tohno, T Okimoto, Yoshiki Naoi, Katsushi Nishino, Shiro Sakai, T Kusuura, A Mitra, S Nouda, M Kimura, S Kawano and Y Muramoto :
GaN-LED's on nano-etched sapphire substrate by metal organic chemical vapor deposition,
The first International conference on White Light-Emitting Diodes(LEDs) and Solid State Lighting (SSL), Tokyo, Nov. 2007.
9.T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition,
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Oct. 2007.
10.K. Ikeda, R. Matsuoka, T. Hama, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, M. Koike and S.M. Lee :
An a-GaN and an a-InGaN on r-Sapphire by Relatively High Temperature Metal organic Chemical Vapor Deposition,
The 3rd Asia-Pacific Workshop on Widegap Semiconductors, Jeonju, Mar. 2007.
11.Katsushi Nishino, A. Sakamoto and Shiro Sakai :
Growth of Thick a-plane GaN on r-plane Sapphire by Direct Synthesis Method,
International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
12.Yoshiki Naoi, K. Ikeda, T. Hama, R.J. Choi, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee :
Investigation of InGaN films on a-plane GaN grown by metal organic chemical vapor deposition technique,
International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
13.Yoshiki Naoi, K. Ono, K. Ikeda, R.J. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee :
Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate,
International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006.
14.M. Tsukihara, K. Sumiyoshi, T. Okimoto, K. Kataoka, S. Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition,
First International Symposium on Growth of III-Nitrides, Linkoping, Jun. 2006.
15.S. Kawamichi, Katsushi Nishino, K. Sumiyoshi, M. Tsukihara and Shiro Sakai :
Inversion domains in AlGaN films grown on patterned sapphire substrate,
13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
16.K. Ikeda, R.J. Choi, T. Fukumoto, K. Ono, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai :
Visible light emitting diode using a-plane GaN on r-sapphire substrate with an InAlN buffer layer and a high temperature atomic layer epitaxy,
13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
17.K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Al0.17Ga0.83N film with middle temperature intermediate layer grown on trenched sapphire substrate by MOCVD,
13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006.
18.R.J. Choi, Shiro Sakai, Yoshiki Naoi, Katsushi Nishino, M. Koike and S.M. Lee :
Efficient non-polar a-plane light-emitting-diodes grown using AlInNbuffer and intermediate layer,
6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, May 2006.
19.Maosheng Hao, Sourindra Mahanty, Y Morishima, Hironori Takenaka, Jie Wang, Satoru Tottori, Masaaki Nozaki, Yasuhiro Ishikawa, Tomoya Sugahara, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Stacking Fault and Its Effect on the GaN Epitaxial Growth,
Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, Vol.xxvi+892, 675-680, Nara, Jan. 1999.
20.Maosheng Hao, Tomoya Sugahara, Satoru Tottori, Masaaki Nozaki, Satoshi Kurai, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Correlation between Dislocations and Luminescence in GaN,
Proceedings of SPIE, Vol.3419, 138-145, Taipei, Jul. 1998.

Proceeding of Domestic Conference:

1.Shoki Senoo and Katsushi Nishino :
AlN 結晶成長における基板表面酸化膜除去の効果,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, 11-13, Sep. 2018.
2.Yuki Naito and Katsushi Nishino :
真空蒸着法による p 型 Si 基板上への BaSi2 膜作製の検討,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, 11-12, Sep. 2018.
3.Yuta Ichimura and Katsushi Nishino :
直接合成法によるβ-Ga2O3の結晶成長,
第79回応用物理学会秋季学術講演会, 19p-PB8-18, Sep. 2018.
4.Kohki Edazawa, Sho Uranishi, Takuro Tomita and Katsushi Nishino :
AlN結晶のアニール処理による機械的ダメージの回復評価,
第79回応用物理学会秋季学術講演会, 19p-PA4-1, Sep. 2018.
5.Naoya Takikawa and Katsushi Nishino :
AlN growth by sublimation method using peeled AlN as seed crystal,
2016年度 応用物理・物理系学会中国四国支部合同学術講演会, 88, Jul. 2016.
6.Kiyoto Nashiki and Katsushi Nishino :
Growth of bulk AlN crystal on 6H-SiC substrate,
2016年度 応用物理・物理系学会中国四国支部合同学術講演会, 87, Jul. 2016.
7.Ryuji Hashimoto, Yudai Suzuki and Katsushi Nishino :
Growth of AlGaN films by MOCVD on sublimation-grown AlN substrates,
2016年度 応用物理・物理系学会中国四国支部合同学術講演会, 86, Jul. 2016.
8.Suzuki Yudai and Katsushi Nishino :
Surface treatment of AlN substrates for growth of AlGaN films by MOCVD,
2015年度 応用物理・物理系学会中国四国支部 合同学術講演会, Da-6, Aug. 2015.
9.Yamamoto Yuki and Katsushi Nishino :
Effect of tantalum mask on AlN crystal growth by sublimation method,
2015年度 応用物理・物理系学会中国四国支部 合同学術講演会, Ca-1, Aug. 2015.
10.Takayoshi Shodai and Katsushi Nishino :
昇華法におけるAlN結晶成長速度の向上に関する検討,
2014年度 応用物理・物理系学会中国四国支部 合同学術講演会, Jul. 2014.
11.Yuichi Hiwasa, Kotaro Hayashi and Katsushi Nishino :
荒れた6H-SiC基板へ昇華法により成長したAlNの剥離機構,
日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 第5回窒化物半導体結晶成長講演会, FR18, Jun. 2013.
12.小渕 圭一朗, Kotaro Hayashi and Katsushi Nishino :
昇華法によるAlN成長における初期過程の検討,
日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 第5回窒化物半導体結晶成長講演会, FR17, Jun. 2013.
13.金 度亨, 李 熙燮, 山住 和也, Katsushi Nishino and Shiro Sakai :
P-type conduction mechanism in Carbon-doped AlGaN,
第60 回応用物理学会春季学術講演会 講演予稿集, 28p-PA1-29, Mar. 2013.
14.Katsushi Nishino, HIWASA YUICHI, IWAMOTO SHOTA, HAYASHI KOTARO and TSUKIHARA MASASHI :
昇華法による荒れたSiC基板上へのAlN成長,
第60回応用物理学会春季学術講演会, Mar. 2013.
15.Kotaro Hayashi, Jun Nakauchi, Katsushi Nishino and Masashi Tsukihara :
AlSiN層を用いた昇華法成長AlNの剥離,
第73回応用物理学会学術講演会, 12a-PB4-4, Sep. 2012.
16.加藤 保洋, 中内 潤, Katsushi Nishino, 月原 政志 and Shiro Sakai :
昇華法によるバルクAlNの成長,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, 11-3, Sep. 2010.
17.Katsushi Nishino :
直接合成法によるa面GaNの結晶成長,
LED総合フォーラム, P20, Apr. 2010.
18.Katsushi Nishino, 澤井 佑介, 成行 祐児, 野田 丈嗣, Yoshiki Naoi, Shiro Sakai, 深野 敦之 and 田中 覚 :
ナノ加工GaN基板上再成長層のTEM観察,
第57回応用物理学関係連合講演会, 19a-TB2, Mar. 2010.
19.結城 勇介, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
直接合成法を用いたa 面GaN 結晶成長のためのNH3 流量の検討,
平成20年度電気関係学会四国支部連合大会, 11-2, Sep. 2008.
20.加藤 篤, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
SiO2 を斜め蒸着した凹凸GaN テンプレート上へのGaN成長,
平成20年度電気関係学会四国支部連合大会, 11-1, Sep. 2008.
21.松岡 遼, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
ストライプ状金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長,
2008年(平成20年)秋季第69回応用物理学会学術講演会, 2a-CA-8, Sep. 2008.
22.松岡 遼, 沖本 聖, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長,
2008年(平成20年)春季第55回応用物理学会連合講演会, 29p-B-18, Mar. 2008.
23.沖本 聖, 遠野 充明, 南部 紗織, 北村 政治, 月原 政志, 片岡 研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
AlGaN系紫外発光ダイオードの光出力に及ぼす電極形状の影響に関する研究,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-29, Sep. 2007.
24.仁木 貴敏, 片岡 研, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
MOCVD成長AlGaNのMgドーピングによる結晶性への影響,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-22, Sep. 2007.
25.松岡 遼, 池田 賢司, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
オフ角r面サファイア基板上にMOCVD法によるa面GaNのX線回折による評価,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-14, Sep. 2007.
26.加藤 篤, 月原 政志, 片岡 研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
UV-LED用高Al組成AlGaN結晶の高品質化に関する研究,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-11, Sep. 2007.
27.遠野 充明, 沖本 聖, Yoshiki Naoi, Katsushi Nishino, 楠浦 崇央, ミトラ アヌパム, 納田 卓, 木村 真大, 川野 俊輔 and 村本 宣彦 :
ナノ・エッチングしたサファイア基板上へのGaN-LEDのMOCVD成長,
Journal of Shikoku-Section Joint Convention of the Institutes of Electrical and Related Engineers, Vol.11-5, Sep. 2007.
28.遠野 充明, 沖本 聖, 加藤 篤, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, 楠浦 崇央 and ミトラ アヌパム :
ナノ・エッチングしたサファイア上へのGaNのMOCVD成長,
第68回応用物理学会学術講演会, Sep. 2007.
29.松岡 遼, 池田 賢司, 濱 敬重, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Rakjun Choi, S.M. Lee and 小池 正好 :
MOCVDにより直接高温成長した高品質a面GaN・InGaN結晶成長,
第54回応用物理学会学術講演会, Mar. 2007.
30.濱 敬重, 小野 耕大, 池田 賢司, Rakjun Choi, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, S.M. Lee and 小池 正好 :
a面バルクGaNおよびr面サファイア上a面GaNに作製した青色発光ダイオード,
第67回応用物理学会学術講演会, Sep. 2006.
31.片岡 研, 沖本 聖, 仁木 貴敏, 住吉 和英, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
SiNを用いたAlInGaN系紫外LED高出力化の検討,
第67回応用物理学会学術講演会, Sep. 2006.
32.池田 賢司, Rakjun Choi, 福本 哲也, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, 小池 正好 and S.M. Lee :
a面成長InGaN/GaN LEDにおけるInGaN活性層の解析,
第67回応用物理学会学術講演会, Aug. 2006.
33.Katsushi Nishino, 宮村 高史 and Shiro Sakai :
TMA添加直接合成法によるバルクAlGaNの結晶成長,
第67回応用物理学会学術講演会, Aug. 2006.
34.Katsushi Nishino, 坂本 旭 and Shiro Sakai :
直接合成法によるr面サファイア上へのバルクa-GaN成長,
第67回応用物理学会学術講演会, Aug. 2006.
35.仁木 貴敏, 月原 政志, 沖本 聖, 住吉 和英, 片岡 研, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
中間温度成長AlGaN層と多重量子井戸(MQW)層によるMOCVD成長AlGaN中の転位低減,
応用物理学会中国四国支部,日本物理学会中国支部・四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 144, Jul. 2006.
36.沖本 聖, 月原 政志, 住吉 和英, 片岡 研, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai and Shiro Sakai :
低温成長層の導入によるAlGaNの高品質化,
応用物理学会中国四国支部,日本物理学会中国支部・四国支部,日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 142, Jul. 2006.
37.池田 賢司, Choi Rak-Jun, 福本 哲也, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Lee Min Soo and 小池 正好 :
AlInN-buffer層上のALEによるa面GaNの高品質化,
第53回応用物理学会学術振興会講演予稿集, Vol.26, 401, Mar. 2006.
38.河道 修一, Katsushi Nishino, 住吉 和英, 月原 政志 and Shiro Sakai :
凹凸サファイア基板上に成長させたAlGaN薄膜の反転ドメイン,
第53回応用物理学会学術振興会講演予稿集, Vol.25, 379, Mar. 2006.
39.住吉 和英, 月原 政志, 沖本 聖, 河道 修一, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
低温中間層を用いた加工サファイア基板上のAl0.17Ga0.83N MOCVD成長,
第53回応用物理学会学術振興会講演予稿集, Vol.25, 378, Mar. 2006.
40.山本 真美子, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
フラックス成長BP結晶上へのGaN成長,
第53回応用物理学会学術振興会講演予稿集, Vol.22, 346, Mar. 2006.
41.住吉 和英, Shiro Sakai, Yoshiki Naoi and Katsushi Nishino :
窒化物半導体と紫外発光デバイス,
第7回IEEE広島支部学生シンポジウム(HISS), Nov. 2005.
42.河道 修一, 住吉 和英, 月原 政志, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
加工サファイア上に成長したAl0.07Ga0.93N薄膜の透過型電子顕微鏡による評価, --- The dislocation measurement of in Al0.07Ga0.93N film on patterned sapphire substrate by TEM ---,
電気関係学会四国支部連合大会, 150, Sep. 2005.
43.山本 真美子, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
フラックス法によるBP結晶成長, --- Crystal Growth of BP by Flux Method ---,
電気関係学会四国支部連合大会, 151, Sep. 2005.

Et cetera, Workshop:

1.雄二 大来, 札野 順, Naoyuki Shimomura and Katsushi Nishino :
電気学会の新事例集を用いた技術者倫理教育実践,
The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-14, No.3, 43-48, Dec. 2014.
2.Yuusuke Takashima, Ryo Shimizu, 北村 彩人, Katsushi Nishino, Yoshiki Naoi, Naoyuki Shimomura and 雄二 大来 :
Learning Effects of the Regional Case Study on Engineering's Ethics,
The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-13, No.3, 31-35, Dec. 2013.
3.Katsushi Nishino and Yoshiki Naoi :
電気電子工学科基礎科目における再履修生を対象とした授業の試み,
工学教育シンポジウム2010(SEE2010), Mar. 2010.
4.遠野 充明, 沖本 聖, Yoshiki Naoi, Katsushi Nishino, Shiro Sakai, 楠浦 崇央, ミトラ アムパム, 納田 卓, 木村 真大, 川野 俊輔 and 村本 宣彦 :
ナノ微細加工サファイア基板上へのGaN系発光ダイオードの作製,
第1回フロンティア研究センターシンポジウム, Vol.P3, Dec. 2007.
5.松岡 遼, 池田 賢司, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
オフ角r面サファイア上MOCVD成長a面GaNのX線回折評価,
第1回フロンティア研究センターシンポジウム, Vol.P2, Dec. 2007.
6.北村 政治, 沖本 聖, 遠野 充明, 南部 紗織, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
340nm帯ナイトライド系 UV-LEDの自己発熱と電流集中効果による発光特性への影響,
第1回フロンティア研究センターシンポジウム, Vol.P1, Dec. 2007.
7.K Kataoka, M Tsukihara, T Niki, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
The segragation and saturation phenomena of Mg concentration in AlGaN,
26th Electronic Materials Symposium (EMS-26), Vol.H7, Jul. 2007.
8.R Matsuoka, K Ikeda, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai :
Chracterization of a-plane MOCVD-grown GaN on off-angle r-plane sapphire substrates,
26th Electronic Materials Symposium (EMS-26), Vol.E12, Jul. 2007.

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

  • Bulk growth of AlGaN by direct synthesis method with Alsource (Project/Area Number: 18560308 )
  • MATERIAL SCIENCE AND APPLICATION OF ALLOY NITRIC SEMICONDUCTORS (Project/Area Number: 11102005 )
  • バルクGaNの大型結晶成長およびデバイス応用 (Project/Area Number: 10750235 )
  • Search by Researcher Number (70284312)