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Tokushima University ⟩ Institute of Post-LED Photonics ⟩
Tokushima University ⟩ Faculty of Science and Technology ⟩ Department of Science and Technology ⟩ Electrical and Electronic Engineering ⟩ Material Science and Device ⟩
Tokushima University ⟩ Research Clusters ⟩ Research Clusters (Registered) ⟩ 2203022 単結晶大面積グラフェンを利用したイオン・バイオセンサプラットフォームの開発 ⟩
Tokushima University ⟩ Graduate School of Advanced Technology and Science ⟩ Systems Innovation Engineering ⟩ Electrical and Electronic Engineering ⟩ Material and Device Science ⟩
Tokushima University ⟩ Graduate School of Sciences and Technology for Innovation ⟩ Science and Technology ⟩ Electrical and Electronic Engineering ⟩ Material Science and Device ⟩
Tokushima University ⟩ Graduate School of Technology, Industrial and Social Sciences ⟩ Division of Science and Technology ⟩ Electrical and Electronic Engineering ⟩ Material Science and Device ⟩ 		(Files for researchmap) [PDF manual] [Auto-propagate to researchmap]

Research

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Field of Study

○ Semiconductor Physical Electronics

Subject of Study

○ Nano-carbon applications

Book / Paper

Academic Paper (Judged Full Paper):

1. Murakami Hayate, Fukunaga Fumiya, Ohi Motoki, Kubo Kosuke, Nakagawa Takeru, Hiroyuki Kageshima, Yasuhide Ohno and Masao Nagase :
Twist angle dependence of graphene-stacked junction characteristics,
Japanese Journal of Applied Physics, Vol.63, No.4, 04SP56-1-04SP56-6, 2024.
(Tokushima University Institutional Repository: 119236,   DOI: 10.35848/1347-4065/ad364f)
2. Yasuhide Ohno, Ayumi Shimmen, Tomohiro Kinoshita and Masao Nagase :
Energy Harvesting of Deionized Water Droplet Flow over an Epitaxial Graphene Film on a SiC Substrate,
Materials, Vol.16, No.12, 4336-1-4336-9, 2023.
(Tokushima University Institutional Repository: 118359,   DOI: 10.3390/ma16124336,   PubMed: 37374520)
3. Motoki Ohi, Fumiya Fukunaga, Hayate Murakami, Hiroyuki Kageshima, Yasuhide Ohno and Masao Nagase :
Resistive-switching behavior in graphene-stacked diode,
Japanese Journal of Applied Physics, Vol.62, SG1031-(5pp), 2023.
(Tokushima University Institutional Repository: 118149,   DOI: 10.35848/1347-4065/acbbd4)
4. Sohta Yamasaki, Nakai Hiroki, Murayama Keita, Yasuhide Ohno and Masao Nagase :
Electron transfer characteristics of amino acid adsorption on epitaxial graphene FETs on SiC substrates,
AIP Advances, Vol.12, No.10, 105310-1-105310-5, 2022.
(Tokushima University Institutional Repository: 117601,   DOI: 10.1063/5.0124084)
5. Nakagawa Yoshinori, Okauchi Shigeki, Sano Masahiko, Takashi Mukai, Yasuhide Ohno and Masao Nagase :
Graphene/AlGaN Schottky barrier photodiodes and its application for array devices,
Japanese Journal of Applied Physics, Vol.61, No.SD, SD1013-(6pp), 2022.
(DOI: 10.35848/1347-4065/ac6132)
6. Taichi Kataoka, Fumiya Fukunaga, Naruse Murakami, Yoshiki Sugiyama, Yasuhide Ohno and Masao Nagase :
Far-infrared emission from graphene on SiC by current injection,
Japanese Journal of Applied Physics, Vol.61, No.SD, SD1019-(6pp), 2022.
(Tokushima University Institutional Repository: 116927,   DOI: 10.35848/1347-4065/ac5423)
7. Minami Tomoki, Ochi Shuta, Nakai Hiroki, Kinoshita Tomohiro, Yasuhide Ohno and Masao Nagase :
Thermal desorption of structured water layer on epitaxial graphene,
AIP Advances, Vol.11, 125012-(5pp), 2021.
(Tokushima University Institutional Repository: 116582,   DOI: 10.1063/5.0075191)
8. Hiroki Nakai, Daiu Akiyama, Yoshiaki Taniguchi, Iori Kishinobu, Hiromichi Wariishi, Yasuhide Ohno, Masao Nagase, Takuya Ikeda, Atsushi Tabata and Hideaki Nagamune :
Charge-independent protein adsorption characteristics of epitaxial graphene field-effect transistor on SiC substrate,
Journal of Applied Physics, Vol.130, No.7, 074502-1-074502-8, 2021.
(Tokushima University Institutional Repository: 116163,   DOI: 10.1063/5.0054688)
9. Murakami Naruse, Sugiyama Yoshiki, Yasuhide Ohno and Masao Nagase :
Blackbody-like infrared radiation in stacked graphene P-N junction diode,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.60, No.SC, SCCD01-(4pp), 2021.
(Tokushima University Institutional Repository: 115744,   DOI: 10.35848/1347-4065/abe208)
10. Kujime Takaya, Taniguchi Yoshiaki, Akiyama Daiu, Kawamura Yusuke, Kanai Yasushi, Matsumoto Kazuhiko, Yasuhide Ohno and Masao Nagase :
High Stability of Epitaxial Graphene on a SiC Substrate,
Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.256, 1900357, 2019.
(DOI: 10.1002/pssb.201900357)
11. Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa and Mikito Yasuzawa :
Observation of the interaction between avidin and iminobiotin using a graphene FET on a SiC substrate,
Japanese Journal of Applied Physics, Vol.58, No.SD, SDDD02, 2019.
(DOI: 10.7567/1347-4065/ab0544,   Elsevier: Scopus)
12. Du Jiyao, Kimura Yukinobu, Tahara Masaaki, Matsui Kazushi, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Vertically stacked graphene tunnel junction with structured water barrier,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.58, No.SD, SDDE01-(4pp), 2019.
(Tokushima University Institutional Repository: 113469,   DOI: 10.7567/1347-4065/ab0891)
13. Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
Suppression of protein adsorption on a graphene surface by phosphorylcholine functionalization,
Japanese Journal of Applied Physics, Vol.58, No.5, 055001, 2019.
(DOI: 10.7567/1347-4065/ab0b37,   Elsevier: Scopus)
14. Terasawa Daiju, Fukuda Akira, Fujimoto Akira, Yasuhide Ohno, Kanai Yasushi and Matsumoto Kazuhiko :
Universal Conductance Fluctuation Due to Development of Weak Localization in Monolayer Graphene,
Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.256, No.6, 1800515, 2019.
(DOI: 10.1002/pssb.201800515,   Elsevier: Scopus)
15. Singh Rupesh, Kawahara Toshio, Ohmi Yuhsuke, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko, Okamoto Kazumasa, Utsunomiya Risa and Yoshimura Masamichi :
Effects of low temperature buffer on carbon nano walls growth,
Materials Today. Communications, Vol.17, 94-99, 2018.
(DOI: 10.1016/j.mtcomm.2018.08.012)
16. Kawata Takuya, Ono Takao, Kanai Yasushi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Improved sensitivity of a graphene FET biosensor using porphyrin linkers,
Japanese Journal of Applied Physics, Vol.57, No.6, 065103, 2018.
(DOI: 10.7567/JJAP.57.065103,   Elsevier: Scopus)
17. Tung Thanh Nguyen, Tue Trong Phan, Lien Thi Ngoc Truong, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko, Nishigaki Koichi, Biyani Manish and Takamura Yuzuru :
Peptide aptamer-modified single-walled carbon nanotube-based transistors for high-performance biosensors,
Scientific Reports, Vol.7, No.1, 17881, 2017.
(Tokushima University Institutional Repository: 114962,   DOI: 10.1038/s41598-017-18169-1,   PubMed: 29263412,   Elsevier: Scopus)
18. Mitsuno Takanori, Taniguchi Yoshiaki, Yasuhide Ohno and Masao Nagase :
Ion sensitivity of large-area epitaxial graphene film on SiC substrate,
Applied Physics Letters, Vol.111, 213103-(4pp), 2017.
(DOI: 10.1063/1.4994253)
19. Kitaoka Makoto, Nagahama Takuya, Nakamura Kohta, Aritsuki Takuya, Takashima Kazuya, Yasuhide Ohno and Masao Nagase :
Carrier doping effect of humidity for single-crystal graphene on SiC,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.56, No.8, 085102-(4pp), 2017.
(Tokushima University Institutional Repository: 111938,   DOI: 10.7567/JJAP.56.085102)
20. D. Terasawa, A. Fukuda, A. Fujimoto, Yasuhide Ohno, Y. Kanai and K. Matsumoto :
Relationship between conductance fluctuation and weak localization in graphene,
Physical Review B, Vol.95, No.12, 125427, 2017.
(DOI: 10.1103/PhysRevB.95.125427)
21. Taniguchi Yoshiaki, Miki Tsubasa, Mitsuno Takanori, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
Fabrication of hydrophilic graphene film by molecular functionalization,
Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.254, No.2, 1600524-(4pp), 2016.
(DOI: 10.1002/pssb.201600524)
22. Yasuhide Ohno, Kanai Yasushi, Mori Yuki, Masao Nagase and Matsumoto Kazuhiko :
Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates,
Japanese Journal of Applied Physics, Vol.55, No.6S1, 06GF09, 2016.
(DOI: 10.7567/JJAP.55.06GF09,   Elsevier: Scopus)
23. Aritsuki Takuya, Nakashima Takeshi, Kobayashi Keisuke, Yasuhide Ohno and Masao Nagase :
Epitaxial graphene on SiC formed by the surface structure control technique,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.55, No.6, 06GF03-(4pp), 2016.
(Tokushima University Institutional Repository: 110895,   DOI: 10.7567/JJAP.55.06GF03,   Elsevier: Scopus)
24. Masatoshi Nakamura, Yasushi Kanai, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto :
Graphene-FET-based gas sensor properties depending on substrate surface conditions,
Japanese Journal of Applied Physics, Vol.54, No.6S1, 06FF11, 2015.
(DOI: 10.7567/JJAP.54.06FF11,   Elsevier: Scopus)
25. Fan Yang, A.A. Taskin, Satoshi Sasaki, Kouji Segawa, Yasuhide Ohno, Kazuhiko Matsumoto and Yoichi Ando :
Dual-Gated Topological Insulator Thin-Film Device for Efficient Fermi-Level Tuning,
ACS Nano, Vol.9, No.4, 4050-4055, 2015.
(DOI: 10.1021/acsnano.5b00102,   PubMed: 25853220,   Elsevier: Scopus)
26. Akira Fukuda, Daiju Terasawa, Yasuhide Ohno and Kazuhiko Matsumoto :
Effect of the Inert Gas Adsorption on the Bilayer Graphene to the Localized Electron Magnetotransport,
Journal of Physics: Conference Series, Vol.568, No.5, 052009, 2014.
(DOI: 10.1088/1742-6596/568/5/052009,   Elsevier: Scopus)
27. Takashi Ikuta, Kenta Gumi, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto :
Direct graphene synthesis on a Si/SiO2 substrate by a simple annealing process,
Materials Research Express, Vol.1, No.2, 025028, 2014.
(DOI: 10.1088/2053-1591/1/2/025028)
28. Toshio Kawahara, Satarou Yamaguchi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto and Kazumasa Okamoto :
Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process,
e-Journal of Surface Science and Nanotechnology, Vol.12, 225-229, 2014.
(DOI: 10.1380/ejssnt.2014.225)
29. Fan Yang, A.A. Taskin, Satoshi Sasaki, Kouji Segawa, Yasuhide Ohno, Kazuhiko Mastumoto and Yoichi Ando :
Top gating of epitaxial (Bi1-xSbx)2Te3 topological insulator thin films,
Applied Physics Letters, Vol.104, No.16, 161614, 2014.
(DOI: 10.1063/1.4873397)
30. Toshio Kawahara, Satarou Yamaguchi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto, Kazumasa Okamoto, Risa Utsunomiya, Teruaki Matsuba, Yuki Matsuoka and Masamichi Yoshimura :
Raman spectral mapping of self-aligned carbon nanowalls,
Japanese Journal of Applied Physics, Vol.53, No.5S1, 05FD10, 2014.
(DOI: 10.7567/JJAP.53.05FD10,   CiNii: 1360284924866011904)
31. Hasegawa Masaki, Hirayama Yuki, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Characterization of reduced graphene oxide field-effect transistor and its application to biosensor,
Japanese Journal of Applied Physics, Vol.53, No.5S1, 05FD05-1-05FD05-4, 2014.
(DOI: 10.7567/JJAP.53.05FD05)
32. Kohei Seike, Yusuke Fujii, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto :
Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots,
Japanese Journal of Applied Physics, Vol.53, No.4S, 04EN07, 2014.
(DOI: 10.7567/JJAP.53.04EN07,   CiNii: 1360566399842572288,   Elsevier: Scopus)
33. Kazuhiko Matsumoto, Kenzo Maehashi, Yasuhide Ohno and Koichi Inoue :
Recent advances in functional graphene biosensors,
Journal of Physics D: Applied Physics, Vol.47, No.9, 094005, 2014.
(DOI: 10.1088/0022-3727/47/9/094005,   Elsevier: Scopus)
34. Yusuke Yamashiro, Koichi Inoue, Yasuhide Ohno, Kenzo Maehashi and Kazuhiko Matsumoto :
Enhancement of ElectronPhonon Interaction by Band-Gap Opening in Bilayer Graphene,
Journal of the Physical Society of Japan, Vol.83, No.3, 034703, 2014.
(DOI: 10.7566/JPSJ.83.034703)
35. Hackenberger Guillaume, Azuma Yasuo, Kano Shinya, Tanaka Daisuke, Sakamoto Masanori, Teranishi Toshiharu, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Majima Yutaka :
SiliconNitride-Passivated Bottom-Up Single-Electron Transistors,
Japanese Journal of Applied Physics, Vol.52, No.11R, 110101-1-110101-5, 2013.
(DOI: 10.7567/JJAP.52.110101)
36. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Floating-bridge structure of graphene with ionic-liquid gate,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.10, No.11, 1604-1607, 2013.
(DOI: 10.1002/pssc.201300252)
37. Koshida Keisuke, Gumi Kenta, Yasuhide Ohno, Maehash Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Position-Controlled Direct Graphene Synthesis on Silicon Oxide Surfaces Using Laser Irradiation,
Applied Physics Express, Vol.6, No.10, 105101-1-105101-3, 2013.
(DOI: 10.7567/APEX.6.105101)
38. Zaifuddin Mohd Nursakinah, Okamoto Shogo, Ikuta Takashi, Yasuhide Ohno, Maehashi Kenzo, Miyake Masato, Greenwood Paul, Teo B. K. Kenneth and Matsumoto Kazuhiko :
pH Sensor Based on Chemical-Vapor-Deposition-Synthesized Graphene Transistor Array,
Japanese Journal of Applied Physics, Vol.52, No.6S, 06GK04-1-06GK04-4, 2013.
(DOI: 10.7567/JJAP.52.06GK04)
39. Maehashi Kenzo, Sofue Yasuyuki, Okamoto Shogo, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Selective ion sensors based on ionophore-modified graphene field-effect transistors,
Sensors and Actuators B: Chemical, Vol.187, 45-49, 2012.
(DOI: 10.1016/j.snb.2012.09.033)
40. Okuda Satoshi, Okamoto Shogo, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Horizontally Aligned Carbon Nanotubes on a Quartz Substrate for Chemical and Biological Sensing,
The Journal of Physical Chemistry C, Vol.116, No.36, 19490-19495, 2012.
(DOI: 10.1021/jp301542w)
41. Kawahara Toshio, Yamaguchi Satarou, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko, Mizutani Shin and Itaka Kenji :
Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy,
Applied Surface Science, Vol.267, 101-105, 2012.
(DOI: 10.1016/j.apsusc.2012.08.003)
42. Okamoto Shogo, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Immunosensors Based on Graphene Field-Effect Transistors Fabricated Using Antigen-Binding Fragment,
Japanese Journal of Applied Physics, Vol.51, No.6S, 06FD08-1-06FD08-4, 2012.
(DOI: 10.1143/JJAP.51.06FD08)
43. Gumi Kenta, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Direct Synthesis of Graphene on SiO2 Substrates by Transfer-Free Processes,
Japanese Journal of Applied Physics, Vol.51, No.6S, 06FD12-1-06FD12-4, 2012.
(DOI: 10.1143/JJAP.51.06FD12)
44. Negishi Ryota, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Kobayashi Yoshihiro :
Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Vol.51, No.6S, 06FD03-1-06FD03-4, 2012.
(DOI: 10.1143/JJAP.51.06FD03)
45. Fujii Yusuke, Ohori Takahiro, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics,
Japanese Journal of Applied Physics, Vol.51, No.6S, 06FD11-1-06FD11-4, 2012.
(DOI: 10.1143/JJAP.51.06FD11)
46. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Electric-field-induced band gap of bilayer graphene in ionic liquid,
Journal of Vacuum Science & Technology B, Vol.30, 03D111-1-03D111-5, 2012.
(DOI: 10.1116/1.3699011)
47. Maehashi Kenzo, Kishimoto Takaomi, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators,
Journal of Vacuum Science & Technology B, Vol.30, 03D108-1-03D108-4, 2012.
(DOI: 10.1116/1.3697527)
48. Abe Masuhiro, Yasuhide Ohno and Matsumoto Kazuhiko :
Schottky barrier control gate-type carbon nanotube field-effect transistor biosensors,
Journal of Applied Physics, Vol.111, No.3, 034506-1-034506-6, 2012.
(DOI: 10.1063/1.3681902)
49. Viet Xuan Nguyen, Ukita Yoshiaki, Chikae Miyuki, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko, Viet Hung Pham and Takamura Yuzuru :
Fabrication of new single-walled carbon nanotubes microelectrode for electrochemical sensors application,
Talanta, Vol.91, 88-94, 2012.
(DOI: 10.1016/j.talanta.2012.01.023)
50. Negishi Ryota, Hirano Hiroki, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Kobayashi Yoshihiro :
Layer-by-layer growth of graphene layers on graphene substrates by chemical vapor deposition,
Thin Solid Films, Vol.519, No.19, 6447-6452, 2011.
(DOI: 10.1016/j.tsf.2011.04.229)
51. Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Label-Free Aptamer-Based Immunoglobulin Sensors Using Graphene Field-Effect Transistors,
Japanese Journal of Applied Physics, Vol.50, No.7R, 070120-1-070120-4, 2011.
(DOI: 10.1143/JJAP.50.070120)
52. Negishi Ryota, Hirano Hiroki, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Kobayashi Yoshihiro :
Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Vol.50, No.6S, 06GE04-1-06GE04-4, 2011.
(DOI: 10.1143/JJAP.50.06GE04)
53. Hakamata Yasufumi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks,
Japanese Journal of Applied Physics, Vol.50, No.6S, 06GE03-1-06GE03-5, 2011.
(DOI: 10.1143/JJAP.50.06GE03)
54. Sofue Yasuyuki, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Highly Sensitive Electrical Detection of Sodium Ions Based on Graphene Field-Effect Transistors,
Japanese Journal of Applied Physics, Vol.50, No.6S, 06GE07-1-06GE07-4, 2011.
(DOI: 10.1143/JJAP.50.06GE07)
55. Hakamata Yasufumi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor,
Applied Physics Express, Vol.4, No.4, 045102-1-045102-3, 2011.
(DOI: 10.1143/APEX.4.045102)
56. Ohori Takahiro, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi, Hayashi Yutaka and Matsumoto Kazuhiko :
Quantized characteristics in carbon nanotube-based single-hole memory with a floating nanodot gate,
Applied Physics Letters, Vol.98, No.22, 223101-1-223101-3, 2011.
(DOI: 10.1063/1.3595266)
57. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Label-Free Biosensors Based on Aptamer-Modified Graphene Field-Effect Transistors,
Journal of the American Chemical Society, Vol.132, No.51, 18012-18013, 2010.
(DOI: 10.1021/ja108127r)
58. Hakamata Yasufumi, Yasuhide Ohno, Maehashi Kenzo, Kasai Seiya, Inoue Koichi and Matsumoto Kazuhiko :
Enhancement of weak-signal response based on stochastic resonance in carbon nanotube field-effect transistors,
Journal of Applied Physics, Vol.108, No.10, 104313-1-104313-4, 2010.
(DOI: 10.1063/1.3514540)
59. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Chemical and biological sensing applications based on graphene field-effect transistors,
Biosensors and Bioelectronics, Vol.26, No.4, 1727-1730, 2010.
(DOI: 10.1016/j.bios.2010.08.001)
60. Ohori Takahiro, Nagaso Satoshi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory,
Japanese Journal of Applied Physics, Vol.49, No.6S, 06GG13-1-06GG13-4, 2010.
(DOI: 10.1143/JJAP.49.06GG13)
61. Tsuji Tomoki, Inoue Koichi, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Raman Scattering of Single-Walled Carbon Nanotubes in Early Growth Stages Using Laser-Irradiated Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Vol.49, No.6S, 06GJ03-1-06GJ03-5, 2010.
(DOI: 10.1143/JJAP.49.06GJ03)
62. Kishimoto Takaomi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films,
Japanese Journal of Applied Physics, Vol.49, No.6S, 06GG02-1-06GG02-4, 2010.
(DOI: 10.1143/JJAP.49.06GG02)
63. Maehashi Kenzo, Iwasaki Shin, Yasuhide Ohno, Kishimoto Takaomi, Inoue Koichi and Matsumoto Kazuhiko :
Aligned Single-Walled Carbon Nanotube Arrays on Patterned SiO2/Si Substrates,
Japanese Journal of Applied Physics, Vol.49, No.6S, 06GK01-1-06GK01-4, 2010.
(DOI: 10.1143/JJAP.49.06GK01)
64. Kawahara Toshio, Yamaguchi Satarou, Maehashi Kenzo, Yasuhide Ohno, Matsumoto Kazuhiko and Kawai Tomoji :
Cobalt Nano Particle Size Dependence of Noise Modulations in Relation to Nonlinearity,
e-Journal of Surface Science and Nanotechnology, Vol.8, 115-120, 2010.
(DOI: 10.1380/ejssnt.2010.115)
65. Kawahara Toshio, Yamaguchi Satarou, Maehashi Kenzo, Yasuhide Ohno, Matsumoto Kazuhiko and Kawai Tomoji :
Robust Noise Modulation of Nonlinearity in Carbon Nanotube Field-Effect Transistors,
Japanese Journal of Applied Physics, Vol.49, No.2S, 02BD11-1-02BD11-5, 2010.
(DOI: 10.1143/JJAP.49.02BD11)
66. Yamamoto Yasuki, Maehashi Kenzo, Yasuhide Ohno and Matsumoto Kazuhiko :
Electrical Detection of Negatively Charged Proteins Using n-Type Carbon Nanotube Field-Effect Transistor Biosensors,
Japanese Journal of Applied Physics, Vol.49, No.2S, 02BD10-1-02BD10-4, 2010.
(DOI: 10.1143/JJAP.49.02BD10)
67. Maehashi Kenzo, Iwasaki Shin, Yasuhide Ohno, Kishimoto Takaomi, Inoue Koichi and Matsumoto Kazuhiko :
Improvement in Performance of Carbon Nanotube Field-Effect Transistors on Patterned SiO2/Si Substrates,
Journal of Electronic Materials, Vol.39, 376-380, 2009.
(DOI: 10.1007/s11664-009-1002-1)
68. Yamamoto Yasuki, Maehashi Kenzo, Yasuhide Ohno and Matsumoto Kazuhiko :
Highly Sensitive Biosensors Based on High-Performance Carbon Nanotube Field-Effect Transistors,
Sensors and Materials, Vol.21, No.7, 351-361, 2009.
(DOI: 10.18494/SAM.2009.599)
69. Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Fabrication of Room-Temperature-Operating Carbon Nanotube Single-Charge Transistors,
Sensors and Materials, Vol.21, No.7, 393-402, 2009.
(DOI: 10.18494/SAM.2009.597)
70. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Electrolyte-Gated Graphene Field-Effect Transistors for Detecting pH and Protein Adsorption,
Nano Letters, Vol.9, No.9, 3318-3322, 2009.
(DOI: 10.1021/nl901596m)
71. Yamamoto Yasuki, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Noise Reduction of Carbon Nanotube Field-Effect Transistor Biosensors by Alternating Current Measurement,
Japanese Journal of Applied Physics, Vol.48, No.6S, 06FJ01-1-06FJ01-4, 2009.
(DOI: 10.1143/JJAP.48.06FJ01)
72. Kamimura Takafumi, Yasuhide Ohno and Matsumoto Kazuhiko :
Carbon Nanotube FabryPerot Device for Detection of Multiple Single Charge Transitions,
Japanese Journal of Applied Physics, Vol.48, No.2R, 025001-1-025001-4, 2009.
(DOI: 10.1143/JJAP.48.025001)
73. Yasuhide Ohno, Asai Yoshihiro, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Room-temperature-operating carbon nanotube single-hole transistors with significantly small gate and tunnel capacitances,
Applied Physics Letters, Vol.94, No.5, 053112-1-0153112-3, 2009.
(DOI: 10.1063/1.3078234)
74. Kamimura Takafumi, Yasuhide Ohno and Matsumoto Kazuhiko :
Transition between Particle Nature and Wave Nature in Single-Walled Carbon Nanotube Device,
Japanese Journal of Applied Physics, Vol.48, No.1R, 015005-1-015005-3, 2009.
(DOI: 10.1143/JJAP.48.015005)
75. Maehashi Kenzo, Yasuhide Ohno, Inoue Koichi, Matsumoto Kazuhiko, Niki Toshikazu and Matsumura Hideki :
Electrical characterization of carbon nanotube field-effect transistors with passivation films deposited by catalytic chemical vapor deposition,
Applied Physics Letters, Vol.92, No.18, 183111-1-183111-3, 2008.
(DOI: 10.1063/1.2920206)
76. Yasuhide Ohno, Asai Yoshihiro, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators,
Japanese Journal of Applied Physics, Vol.47, No.4R, 2056-2059, 2008.
(DOI: 10.1143/JJAP.47.2056)
77. Iwasaki Shin, Maeda Masatoshi, Kamimura Takafumi, Maehashi Kenzo, Yasuhide Ohno and Matsumoto Kazuhiko :
Room-Temperature Carbon Nanotube Single-Electron Transistors Fabricated Using Defect-Induced Plasma Process,
Japanese Journal of Applied Physics, Vol.47, No.4R, 2036-2039, 2008.
(DOI: 10.1143/JJAP.47.2036)
78. Katsura Taiji, Yamamoto Yasuki, Maehashi Kenzo, Yasuhide Ohno and Matsumoto Kazuhiko :
High-Performance Carbon Nanotube Field-Effect Transistors with Local Electrolyte Gates,
Japanese Journal of Applied Physics, Vol.47, No.4R, 2060-2063, 2008.
(DOI: 10.1143/JJAP.47.2060)
79. Asai Yoshihiro, Fujiwara Yasuyuki, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Growth of Suspended Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition,
Journal of Physics: Conference Series, Vol.61, 46-50, 2007.
(DOI: 10.1088/1742-6596/61/1/010)
80. Maehashi Kenzo, Ozaki Hirokazu, Yasuhide Ohno, Inoue Koichi, Matsumoto Kazuhiko, Seki Shu and Tagawa Seiichi :
Formation of single quantum dot in single-walled carbon nanotube channel using focused-ion-beam technique,
Applied Physics Letters, Vol.90, No.2, 023103-1-023103-3, 2007.
(DOI: 10.1063/1.2430680)
81. Kodera Katsuyoshi, Endo Akira, Katsumoto Shingo, Iye Yasuhiro, Yasuhide Ohno, Shimomura Satoshi and Hiyamizu Satoshi :
Temperature Scaling Anomalies in Quantum Hall Plateau Transitions with UltraShort Period Lateral Superlattice,
AIP Conference Proceedings, Vol.850, No.1, 1345-1346, 2006.
(DOI: 10.1063/1.2355205)
82. Yasuhide Ohno, Narumi Kazuki, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Large magnetoresistance in single-walled carbon nanotubes contacted different ferromagnetic metal electrodes,
Journal of Physics: Conference Series, Vol.38, 57-60, 2006.
(DOI: 10.1088/1742-6596/38/1/015)
83. Yasuhide Ohno, Inoue Koichi, Kamimura Takafumi, Maehashi Kenzo, Yamamoto Kazuhiko and Matsumoto Kazuhiko :
Raman Scattering of Single-Walled Carbon Nanotubes Implanted with Ultra-Low-Energy Oxygen Ions,
Japanese Journal of Applied Physics, Vol.44, No.4R, 1615-1620, 2005.
(DOI: 10.1143/JJAP.44.1615)
84. Fujiwara Yasuyuki, Maehashi Kenzo, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Position-Controlled Growth of Single-Walled Carbon Nanotubes by Laser-Irradiated Chemical Vapor Deposition,
Japanese Journal of Applied Physics, Vol.44, No.4R, 1581-1584, 2005.
(DOI: 10.1143/JJAP.44.1581)
85. Kaminishi Daisuke, Ozaki Hirokazu, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi, Matsumoto Kazuhiko, Senri Yasuhiro, Masuda Atsushi and Matsumura Hideki :
Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition,
Applied Physics Letters, Vol.86, No.11, 113115-1-113115-3, 2005.
(DOI: 10.1063/1.1886898)
86. Maehashi Kenzo, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Chirality selection of single-walled carbon nanotubes by laser resonance chirality selection method,
Applied Physics Letters, Vol.85, No.6, 858-860, 2004.
(DOI: 10.1063/1.1778471)
87. Yasuhide Ohno, Shimomura Satoshi, Hiyamizu Satoshi, Takasuka Yasuyuki, Ogura Mutsuo and Komori Kazuhiro :
Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy,
Journal of Vacuum Science & Technology B, Vol.22, No.3, 1526-1528, 2004.
(DOI: 10.1116/1.1738666)
88. Sugimoto Yoshiaki, Takaoka Sadao, Oto Kenichi, Yasuhide Ohno, Shimomura Satoshi and Hiyamizu Satoshi :
Cyclotron resonance in corrugated lateral superlattices,
Physica E: Low-dimensional Systems and Nanostructures, Vol.22, No.1-3, 648-651, 2004.
(DOI: 10.1016/j.physe.2003.12.091)
89. Sugimoto Yoshiaki, Takaoka Sadao, Oto Kenichi, Yasuhide Ohno, Shimomura Satoshi and Hiyamizu Satoshi :
Cyclotron resonance of ultrashort-period lateral superlattices,
Solid State Communications, Vol.127, No.9-10, 671-675, 2003.
(DOI: 10.1016/S0038-1098(03)00519-2)
90. Yasuhide Ohno, Shimomura Satoshi and Hiyamizu Satoshi :
Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (7 7 5)B-oriented InP substrate by molecular beam epitaxy,
Journal of Crystal Growth, Vol.251, No.1-4, 269-275, 2003.
(DOI: 10.1016/S0022-0248(02)02468-5)
91. Kanamori Hironori, Hyodo K., Yasuhide Ohno, Shimomura Satoshi, Hiyamizu Satoshi and Okamoto Y. :
Room temperature oscillation of self-organized In0.2G0.8As/GaAs quantum wire lasers grown on (221)A GaAs substrates by molecular beam epitaxy,
Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B, Vol.20, No.4, 1493-1495, 2002.
(DOI: 10.1116/1.1495004)
92. Yasuhide Ohno, Kanamori Hironori, Shimomura Satoshi and Hiyamizu Satoshi :
High characteristic temperature (T0=243K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy,
Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B, Vol.20, No.3, 1270-1273, 2002.
(DOI: 10.1116/1.1456520)
93. Iye Yasuhiro, Endo Akira, Katsumoto Shingo, Yasuhide Ohno, Shimomura Satoshi and Hiyamizu Satoshi :
Suppression of exchange enhancement of spin gap in quantum Hall systems by ultra-short period lateral superlattice,
The Journal of Physics and Chemistry of Solids, Vol.63, No.6-8, 1297-1300, 2002.
(DOI: 10.1016/S0022-3697(02)00132-4)
94. Yasuhide Ohno, Kanamori Hironori, Shimomura Satoshi and Hiyamizu Satoshi :
Room temperature lasing of quantum wire VCSELs by optical pumping grown on the B GaAs substrates by MBE,
Physica E: Low-dimensional Systems and Nanostructures, Vol.13, No.2-4, 892-895, 2002.
(DOI: 10.1016/S1386-9477(02)00228-X)
95. Iye Yasuhiro, Endo Akira, Katsumoto Shingo, Yasuhide Ohno, Shimomura Satoshi and Hiyamizu Satoshi :
Magnetotransport in ultrashort period unidirectional lateral superlattices,
Physica E: Low-dimensional Systems and Nanostructures, Vol.12, No.1-4, 200-203, 2001.
(DOI: 10.1016/S1386-9477(01)00318-6)
96. Yasuhide Ohno, Takahiro Kitada, Shimomura Satoshi and Hiyamizu Satoshi :
Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy,
Japanese Journal of Applied Physics, Part 2 (Letters), Vol.40, No.10A, L1058-L1060, 2001.
(DOI: 10.1143/JJAP.40.L1058)
97. Nitta Tadashi, Yasuhide Ohno, Shimomura Satoshi and Hiyamizu Satoshi :
Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy,
Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B, Vol.19, No.5, 1824-1827, 2001.
(DOI: 10.1116/1.1398539)
98. Yasuhide Ohno, Nitta Tadashi, Shimomura Satoshi and Hiyamizu Satoshi :
Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy,
Journal of Crystal Growth, Vol.227-228, 970-974, 2001.
(DOI: 10.1016/S0022-0248(01)00961-7)
99. Yasuhide Ohno, Higashiwaki Masataka, Shimomura Satoshi and Hiyamizu Satoshi :
Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)6(AlAs)1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy,
Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B, Vol.18, No.3, 1672-1674, 2000.
(DOI: 10.1116/1.591449)
100. Hiyamizu Satoshi, Shimomura Satoshi and Yasuhide Ohno :
In0.53Ga0.47As/In0.52Al0.48As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy,
Microelectronic Engineering, Vol.47, No.1-4, 225-229, 2000.
(DOI: 10.1016/S0167-9317(99)00201-4)
101. Hiyamizu Satoshi, Yasuhide Ohno, Higashiwaki Masataka and Shimomura Satoshi :
In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy,
Journal of Crystal Growth, Vol.201-202, 824-827, 2000.
(DOI: 10.1016/S0022-0248(98)01449-3)

Academic Paper (Unrefereed Paper):

1. MOTOKI Ohi, Hayate Murakami, KUBO Kohsuke, NAKAGAWA Takeru, Yasuhide Ohno, Masao Nagase and 影島 博之 :
高電圧印加によるグラフェン積層接合の抵抗変化,
第15回「集積化MEMSシンボジウム」, 6P4-D-2-(5pp), 2023.
2. Fumiya Fukunaga, MOTOKI Ohi, Hayate Murakami, Yasuhide Ohno and Masao Nagase :
グラフェン積層接合への高電界印加による抵抗状態遷移,
第14回「集積化MEMSシンボジウム」, 14P2-C-2-(5pp), 2022.
3. Taichi Kataoka, TAKUMA Kuhara, Yasuhide Ohno and Masao Nagase :
SiC 基板上短冊状グラフェンからの遠赤外線放射の観測,
第14回「集積化MEMSシンボジウム」, 14P2-C-3-(6pp), 2022.

Proceeding of International Conference:

1. Murayama Keita, Yasuhide Ohno, Taira Kajisa and Masao Nagase :
Detection of antigens exceeding the Debye screening length using epitaxial graphene FET on SiC substrates,
36th International Microprocesses and Nanotechnology Conference (MNC2023), No.16P-1-20, 札幌市, Nov. 2023.
2. Murakami Hayate, Fumiya Fukunaga, Ohi Motoki, KUBO Kohsuke, Nakagawa Takeru, Kageshima Hiroyuki, Yasuhide Ohno and Masao Nagase :
Twist angle dependence of graphene-stacked junction characteristics,
36th International Microprocesses and Nanotechnology Conference (MNC2023), No.16P-1-15, 札幌市, Nov. 2023.
3. Kusaka Tomoki, Akihiro Furube, Tetsuro Katayama, Hiroki Kishikawa, Yasuhide Ohno, Masao Nagase and Junichi Fujikata :
Demonstration of All-Optical Ultrafast Switching, Using High-Quality Graphene,
pLED international symposium 2023, P-9, Mar. 2023.
4. Yamasaki Sohta, Yasuhide Ohno and Masao Nagase :
Amino acids adsorption characteristics of epitaxial graphene FETs on SiC substrates,
35th International Microprocesses and Nanotechnology Conference (MNC2022), No.10P-1-9, 徳島市, Nov. 2022.
5. Ohi Motoki, Fumiya Fukunaga, Murakami Hayate, Kageshima Hiroyuki, Yasuhide Ohno and Masao Nagase :
Resistive switching behavior in graphene-stacked junction,
35th International Microprocesses and Nanotechnology Conference (MNC2022), No.10P-1-12, 徳島市, Nov. 2022.
6. Kataoka Taichi, Kuhara Takuma, Fumiya Fukunaga, Ohi Motoki, Murakami Hayate, Yasuhide Ohno and Masao Nagase :
Blackbody-like far-infrared emission from electrically biased graphene on SiC,
35th International Microprocesses and Nanotechnology Conference (MNC2022), No.10P-1-11, 徳島市, Nov. 2022.
7. Tomoki Kusaka, Akihiro Furube, Tetsuro Katayama, Hiroki Kishikawa, Yasuhide Ohno, Masao Nagase and Junichi Fujikata :
Ultrafast All-Optical Switching with High-Quality Graphene and its Polarization Effect,
15th Pacific Rim Conference on Lasers and Electro-Optics (CLEO Pacific Rim, CLEO-PR 2022), CTuA2D-04, Sapporo, Aug. 2022.
(DOI: 10.1364/CLEOPR.2022.CTuA2D_04,   Elsevier: Scopus)
8. Tomoki Kusaka, Akihiro Furube, Tetsuro Katayama, Hiroki Kishikawa, Yasuhide Ohno, Masao Nagase and Junichi Fujikata :
Demonstration of All-Optical Ultrafast Switching, Using High-Quality Graphene,
27th OptoElectronics and Communications Conference (OECC 2022), WP-F-4, Toyama, Jul. 2022.
(DOI: 10.23919/OECC/PSC53152.2022.9849944,   Elsevier: Scopus)
9. Nakagawa Yoshinori, Okauchi Shigeki, Sano Masahiko, Takashi Mukai, Yasuhide Ohno and Masao Nagase :
Deep ultraviolet light detection by AlGaN/Gr hetero junction photodiode array,
34th International Microprocesses and Nanotechnology Conference (MNC2021), No.P21-10, Online, Oct. 2021.
10. Kataoka Taichi, Fukunaga Fumiya, Murakami Naruse, Sugiyama Yoshiki, Yasuhide Ohno and Masao Nagase :
Far-infrared emission from graphene on SiC by current injection,
34th International Microprocesses and Nanotechnology Conference (MNC2021), No.P21-1, Online, Oct. 2021.
11. Nakai Hiroki, Akiyama Daiu, Taniguchi Yoshiaki, Kishinobu Iori, Ikeda Takuya, Atsushi Tabata, Hideaki Nagamune, Yasuhide Ohno and Masao Nagase :
Protein detection by electron donor using epitaxial graphene film on SiC substrate,
33rd International Microprocesses and Nanotechnology Conference (MNC2020), No.2020-21-12, Online, Nov. 2020.
12. Murakami Naruse, Sugiyama Yoshiki, Yasuhide Ohno and Masao Nagase :
BLACKBODY-LIKE INFRARED RADIATION IN STACKED GRAPHENE PN JUNCTION DIODE,
33rd International Microprocesses and Nanotechnology Conference (MNC2020), No.2020-21-14, Online, Nov. 2020.
(DOI: 10.35848/1347-4065/abe208)
13. Yasuhide Ohno, Mitsuno Takanori, Taniguchi Yoshiaki and Masao Nagase :
1-aminopyrene-modified epitaxial graphene device for pH sensors,
Proceedings of Compound Semiconductor Week 2019, TuC1-3, May 2019.
(DOI: 10.1109/ICIPRM.2019.8819347)
14. Kujime Takaya, Taniguchi Yoshiaki, Akiyama Daiu, Kawamura Yusuke, Yasuhide Ohno and Masao Nagase :
High Stability of the epitaxial graphene film on SiC substrate,
Proceedings of Compound Semiconductor Week 2019, MoP-1-10, May 2019.
(DOI: 10.1109/ICIPRM.2019.8819200)
15. Ono Ryosuke, Masashi Kurashina, Mikito Yasuzawa, Yasuhide Ohno and Masao Nagase :
Fabrication of Nanopillars Using Focus Ion Beam-Chemical Vapor Deposition Method,
5th International Forum on Advanced Technologies, Taipei, Mar. 2019.
16. Du Jiyao, Kimura Yukinobu, Tahara Masaaki, Matsui Kazushi, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Vertically stacked graphene tunnel junction with ultrathin water layer barrier,
31th International Microprocesses and Nanotechnology Conference (MNC2018), No.16P-11-27, Sapporo, Japan, Nov. 2018.
17. Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa and Mikito Yasuzawa :
Observation of the interaction between avidin and iminobiotin using graphene FET on SiC substrate,
31th International Microprocesses and Nanotechnology Conference (MNC2018), No.16P-11-3, Sapporo, Japan, Nov. 2018.
18. Masaki Kuzuo, Kazushi Matsui, Yasuhide Ohno and Masao Nagase :
Mechanical Properties of Structured Water Layer on Epitaxial Graphene,
ACSIN-14 & ICSPM26, No.22P032, 42-(0.5pp), Sendai International Center, Sendai, Japan, Oct. 2018.
19. Yasuhide Ohno, Yoshiaki Taniguchi and Masao Nagase :
Electrical characteristics of positively and negatively charged protein adsorption to epitaxial graphene film on SiC substrate,
Proceedings of 2017 Workshop on Innovative Nanoscale Devices and Systems, Nov. 2017.
20. Kitaoka Makoto, Nakamura Kota, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Water adsorption and desorption for graphene on SiC,
International Symposium on Epitaxial Graphene 2017 (ISEG-2017), No.P6, 44, Nagoya, Japan, Nov. 2017.
21. Taniguchi Yoshiaki, Milki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
Intrinsic response of protein adsorption to graphene film on SiC substrate,
Proceedings of 2017 International Conference on Solid State Devices and Materials, Sep. 2017.
22. Tsuyoshi Tsuda, Mikito Yasuzawa, Yasuhide Ohno and Masao Nagase :
Electrical characteristic evaluation of Graphene on SiC,
International Conference on Advanced Materials Development and Performance 2017, Pune, Jul. 2017.
23. Yasuhide Ohno, Takanori Mitsuno, Yoshiaki Taniguchi and Masao Nagase :
Intrinsic ion sensitivity of graphene field-effect transistors,
2016 Workshop on Innovative Nanoscale Devices and Systems, Dec. 2016.
24. Kitaoka Makoto, Nagahama Takuya, Nakamura Kohta, Takashima Kazuya, Yasuhide Ohno and Masao Nagase :
Carrier doping effect of humidity for single-crystal graphene on SiC,
29th International Microprocesses and Nanotechnology Conference (MNC2016), No.11P-11-24, Kyoto, Japan, Nov. 2016.
25. Taniguchi Yoshiaki, Miki Tsubasa, Mitsuno Takanori, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
Protein adsorption characteristics on bare and phosphorylcholine-modified graphene films on SiC substrate,
29th International Microprocesses and Nanotechnology Conference (MNC2016), No.11P-11-16, Kyoto, Japan, Nov. 2016.
26. Ono Takao, Kanai Yasushi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
An Application of Graphene Field Effect Transistor to Enzymatic Assay,
The 43rd International Symposium on Compound Semiconductor, Jun. 2016.
27. Takanori Mitsuno, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
Intrinsic pH Sensitivity of Graphene Field-Effect Transistors,
The 43rd International Symposium on Compound Semiconductor, Jun. 2016.
28. Yoshiaki Taniguchi, Tsubasa Miki, Takanori Mitsuno, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
Hydrophilic Graphene Film by Molecular Functionalization,
The 43rd International Symposium on Compound Semiconductor, Jun. 2016.
29. Yasushi Kanai, Takashi Ikuta, Takao Ono, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto :
Detection Kondo effect in Graphene Quantum Dots,
The 43rd International Symposium on Compound Semiconductor, 7528502, Jun. 2016.
(DOI: 10.1109/ICIPRM.2016.7528502,   Elsevier: Scopus)
30. Yasuhide Ohno, Masao Nagase and Matsumoto Kazuhiko :
Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates,
28th International Microprocesses and Nanotechnology Conference (MNC2015), No.12P-7-28, Toyama, Japan, Nov. 2015.
31. Aritsuki Takuya, Nakashima Takeshi, Kobayashi Keisuke, Yasuhide Ohno and Masao Nagase :
High quality graphene on SiC formed by the surface structure control technique,
28th International Microprocesses and Nanotechnology Conference (MNC2015), No.12P-7-16, Toyama, Japan, Nov. 2015.
32. Yasuhide Ohno :
Graphene Field-Effect Transistor for Biological Sensing Applications,
2013 International Conference on Small Science, Las Vegas, Dec. 2013.
33. Yasuhide Ohno, Okamoto Shogo, Maehashi Kenzo and Matsumoto Kazuhiko :
Fragment antibody based biosensors using graphene field-effect transistor,
2013 International Symposium on Advanced Nanodevices and Nanotechnology, Vol.Thu1-6, Hawaii, Dec. 2013.
34. Oe Taskeshi, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko, Watanabe Yohei, Ikuta Kazuyoshi, Kawahara Toshio and Suzuki Yasuo :
Graphene Field-effect Transistor-based Influenza-virus Detection,
26th International Microprocesses and Nanotechnology Conference, Vol.7C-5-2L, Sapporo, Nov. 2013.
35. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Floating-Bridge Graphene Devices on Ionic Liquid,
26th International Microprocesses and Nanotechnology Conference, Vol.7P-7-19, Sapporo, Nov. 2013.
36. Ikuta Takashi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Direct Graphene Synthesis on Insulated Substrates using Ni/Pd Catalytic Layers,
26th International Microprocesses and Nanotechnology Conference, Vol.7P-7-26, Sapporo, Nov. 2013.
37. Nakamura Masatoshi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Fabrication of graphene devices using resist-free process,
2013 International Conference on Solid State Devices and Materials, Vol.PS-13-21, Fukuoka, Sep. 2013.
38. Seike Kohei, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Floating-Gated Memory Based on Carbon Nanotube Field-Effect Transistors with Si Floating Dots,
2013 International Conference on Solid State Devices and Materials, Vol.C-3-5L, Fukuoka, Sep. 2013.
39. Koshida Keisuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Laser-Irradiated Direct Synthesis of Graphene and Device Application,
2013 International Conference on Solid State Devices and Materials, Vol.C-3-2, Fukuoka, Sep. 2013.
40. Matsumoto Kazuhiko, Maehashi Kenzo, Yasuhide Ohno and Inoue Koichi :
Advances in Graphene Device & Bio-Sensor Applications,
The 20th International Workshop on Active-Matrix Flatpanel Displays and Devices, Vol.S1-3, Kyoto, Jul. 2013.
41. Matsumoto Kazuhiko, Kamimura Takafumi, Maehashi Kenzo and Yasuhide Ohno :
Nano carbon devices & applications,
14th International Conference on the Science and Application of Nanotubes Satellite Symposia, Vol.I2, Estonia, Jun. 2013.
42. Matsuzaki M., Negishi Ryota, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Kobayashi Yoshihiro :
Improving Electrical Performance of Graphene Oxide Thin Films by Alcohol Vapor Treatment,
40th International Symposium on Compound Semiconductors, Kobe, May 2013.
43. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Ionic-Liquid-Gated Bilayer Graphene Transistor,
40th International Symposium on Compound Semiconductors, May 2013.
44. Yasuhide Ohno :
Electrical detection of chemical and biological species by graphene field-effect transistors,
2012 Graphene International Conference, 台湾新竹県竹東鎮, Nov. 2012.
45. Matsumoto Kazuhiko, Maehashi Kenzo, Yasuhide Ohno and Inoue Koichi :
Recent advance in graphene-based nano-biosensors,
3rd International Symposium on Graphene Devices, Paris, Nov. 2012.
46. Zaifuddin Sakinah, Okamoto Shogo, Ikuta Takashi, Yasuhide Ohno, Maehashi Kenzo, Miyake Masato and Matsumoto Kazuhiko :
Sensor Application based on CVD-synthesized graphene,
25th International Microprocesses and Nanotechnology Conference, Vol.2P-11-121L, Kobe, Nov. 2012.
47. Okamoto Shogo, Ikuta Takashi, Zaifuddin Sakinah, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Highly Sensitive Biosensors based on Fragment-Modified Graphene FET,
25th International Microprocesses and Nanotechnology Conference, Vol.2P-11-116L, Kobe, Nov. 2012.
48. Koshida Keisuke, Gumi Kenta, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Position-Controlled Direct Graphene Synthesis on SiO2 Surface by Laser Irradiation,
25th International Microprocesses and Nanotechnology Conference, Vol.2P-11-115L, Kobe, Nov. 2012.
49. Fujii Yusuke, Kamimura Takafumi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Carbon Nanotube-Based Memory with Atomic-Layer-Deposited Dielectrics,
25th International Microprocesses and Nanotechnology Conference, Vol.1D-5-3, Kobe, Nov. 2012.
50. Gumi Kenta, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Direct Graphene Growth with Multi Metal Layers without Using Chemical Vapor Deposition,
25th International Microprocesses and Nanotechnology Conference, Vol.31D-2-5, Kobe, Oct. 2012.
51. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Electric-field Dependence of G-band Spectra in Bilayer Graphene,
2012 International Conference on Solid State Devices and Materials, Vol.PS-13-17, Kyoto, Sep. 2012.
52. Negishi Ryota, Kuramoto K., Yasuhide Ohno, Nishino T., Yamaguchi T., Maehashi Kenzo, Matsumoto Kazuhiko, Ishibashi Koji and Kobayashi Yoshihiro :
Efficient Reduction and Restoration of Graphene oxide films as a Channel in Field Effect Transistor: Toward Sensor applications,
2012 International Conference on Solid State Devices and Materials, Vol.C-4-4, Kyoto, Sep. 2012.
53. Maehashi Kenzo, Okuda Satoshi, Koshida Keisuke, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Electrical-Biosensing Performance of Horizontally Aligned Carbon Nanotube Device on Quartz Substrate,
2012 International Conference on Nanoscience + Technology, Vol.NB-5.7, Paris, Jul. 2012.
54. Yamashiro Yusuke, Ikuta Takashi, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Ionic-liquid-Gate Control of Bilayer Graphene,
2012 International Conference on Nanoscience + Technology, Vol.GT-1.2, Paris, Jul. 2012.
55. Yasuhide Ohno, Okamoto Shogo, Maehashi Kenzo and Matsumoto Kazuhiko :
Highly Sensitive Biosensors Based on Fragment Antigen-Binding Modified Graphene Field-Effect Transistors,
2012 International Conference on Nanoscience + Technology, Vol.GT-1.6, Paris, Jul. 2012.
56. Yasuhide Ohno, Yamashiro Yusuke, Ikuta Takashi, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Band-Gap Engineering of Bilayer Graphene with Ionic-Liquid Gate,
2nd International Symposium on Terahertz Nanoscience, Naha, Jul. 2012.
57. Negishi Ryota, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Kobayashi Yoshihiro :
Carrier transport properties of multilayer graphene with turbostratic structure,
13th International Conference on the Science and Application of Nanotubes, Brisbane, Jun. 2012.
58. Koshida Keisuke, Okuda Satoshi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Electrical Detection of Proteins Based on Carbon Nanotubes Field-Effect Transistors with Aligned Channels,
International Symposium on Carbon Nanotube Nanoelectronics 2012, Nagoya, Jun. 2012.
59. Negishi Ryota, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Kobayashi Yoshihiro :
Carrier Transport Properties of Turbostratic Multilayer Graphene Grown by Chemical Vapor Deposition,
International Symposium on Carbon Nanotube Nanoelectronics 2012, Nagoya, Jun. 2012.
60. Okamoto Shogo, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Fragment-Modified Graphene FET for Highly Sensitive Detection of Antigen-Antibody Reaction,
The 14th International Meeting on Chemical Sensors, Vol.6.1.3, Nuremberg, Germany, May 2012.
61. Maehashi Kenzo, Sofue Yasuyuki, Okamoto Shogo, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Selective ion sensors based on ionophore-modified graphene field-effect transistors,
The 14th International Meeting on Chemical Sensors, Vol.3.5.1, Nuremberg, Germany, May 2012.
62. Matsumoto Kazuhiko, Yasuhide Ohno, Maehashi Kenzo and Inoue Koichi :
Selective Bio-Sensing Using Modified Nano Carbon FET,
15th International Conference on Thin Films, Kyoto, Nov. 2011.
63. Sofue Yasuyuki, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Potassium-Ion Sensors Based on Valinomycin-Modified Graphene Field-Effect Transistors,
AVS 58th International Symposium and Exhibition, Vol.GR+MS+EM-FrM8, Nashville, Nov. 2011.
64. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Band-Gap Generation by Using Ionic-Liquid Gate in Bylayer Graphene,
AVS 58th International Symposium and Exhibition, Vol.GR+MS+EM-FrM9, Nashville, Nov. 2011.
65. Maehashi Kenzo, Yasuhide Ohno and Matsumoto Kazuhiko :
Aptamer Modified Graphene Bio Sensor,
AVS 58th International Symposium and Exhibition, Vol.GR+NS+PS+SS-ThM9, Nashville, Nov. 2011.
66. Okuda Satoshi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Horizontally Aligned Carbon Nanotubes on Quartz Substrate for Electrolyte-Gated Chemical and Biological Sensing,
AVS 58th International Symposium and Exhibition, Vol.NS-WeM10, Nashville, Nov. 2011.
67. Gumi Kenta, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Direct Synthesis of Graphene on SiO2 Substrates Using Transfer-Free Processes,
24th International Microprocesses and Nanotechnology Conference, Vol.27P-11-143-L, Kyoto, Oct. 2011.
68. Fujii Yusuke, Ohori Takahiro, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Carbon Nanotube-based Floating Gate Memory with High-k Dielectrics,
24th International Microprocesses and Nanotechnology Conference, Vol.26A-5-3, Kyoto, Oct. 2011.
69. Negishi Ryota, Yasuhide Ohno, Maehashi Kenzo, Matsumoto Kazuhiko and Kobayashi Yoshihiro :
Characteristics of the Field Effect Transistor using Graphene Layers grown on Graphene Template by Chemical Vapor Deposition,
24th International Microprocesses and Nanotechnology Conference, Vol.25A-2-5, Kyoto, Oct. 2011.
70. Okamoto Shogo, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Mastumoto Kazuhiko :
Immunosensors based on Graphene Field-effect Transistors using Antigen-binding Fragments,
24th International Microprocesses and Nanotechnology Conference, Vol.25A-3-4, Kyoto, Oct. 2011.
71. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Electric-field-induced band gap of bilayer graphene in ionic liquid,
2011 International Conference on Solid State Devices and Materials, Vol.K-9-2, Nagoya, Sep. 2011.
72. Sofue Yasuyuki, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Valinomycin-Modified Graphene Field-Effect Transistors for Potassium Ion Sensors,
2011 International Conference on Solid State Devices and Materials, Vol.KM-7-3, Nagoya, Sep. 2011.
73. Okuda Satoshi, Okamoto Shogo, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Sensing Property of Horizontally Aligned Carbon Nanotube Field-Effect Transistor on Quartz Substrate,
2011 International Conference on Solid State Devices and Materials, Vol.K-1-4, Nagoya, Sep. 2011.
74. Matsumoto Kazuhiko, Ohori Takahiro, Maehashi Kenzo, Yasuhide Ohno, Inoue Koichi and Kamimura Takafumi :
Low Bias Operation & Individual Charge Detection of Carbon Nanotube Quantum Nano Memory,
NT11 International Conference on the Science and Application of Nanotubes, Vol.P28, Cambridge, Jul. 2011.
75. Kawahara Toshio, Yamaguchi Satarou, Maehashi Kenzo, Yasuhide Ohno, Matsumoto Kazuhiko and Mizutani Shin :
Gate voltage control of stochastic resonance in carbon nanotube field effect transistors,
21st International Conference on Noise and Fluctuations, Vol.T3.2, Toronto, Jun. 2011.
76. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Graphene field-effect transistors for label-free chemical and biological sensors,
2011 SPIE Defense Security + Sensing, Vol.8031-72, Orlando, Apr. 2011.
77. Ohori Takahiro, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Operation of Single-electron Memory using Floating-gated Carbon Nanotube Field-Effect Transistors,
23rd International Microprocesses and Nanotechnology Conference, Vol.12B-9-2, Kokura, Nov. 2010.
78. Sofue Yasuyuki, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Graphene Field-Effect Transistors for Chemical Sensors,
23rd International Microprocesses and Nanotechnology Conference, Vol.12B-10-5, Kokura, Nov. 2010.
79. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Label-free Aptamer-Based Immunosensors using Graphene Field-Effect Transistors,
23rd International Microprocesses and Nanotechnology Conference, Vol.11D-5-4, Kokura, Nov. 2010.
80. Hakamata Yasufumi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Enhancement of Small Signal based on Electrolyte-gated Carbon Nanotube Field-Effect Transistors in Subthreshold Regime,
23rd International Microprocesses and Nanotechnology Conference, Vol.11D-8-19, Kokura, Nov. 2010.
81. Negishi Ryota, Hirano Hiroki, Kobayashi Yoshihiro, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Thickness Control of Graphene Overlayer via Layer-by-Layer Growth on Graphene Templates by Chemical Vapor Deposition,
23rd International Microprocesses and Nanotechnology Conference, Vol.11D-8-24, Kokura, Nov. 2010.
82. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Graphene Field-Effect Transistors for Label-Free Biological Sensors,
IEEE Sensors 2010 Conference, Vol.A3L-B5, Hawaii, Nov. 2010.
83. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Chemical- and Bio-sensors Based on Graphene Field-Effect Transistors,
International Symposium on Graphene Devices: Technology, Physics, and Modeling, Vol.W4-06, Sendai, Oct. 2010.
84. Ohori Takahiro, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Single-Electron Memory Based on Floating-Gated Carbon Nanotube Field-Effect Transistors,
2010 IEEE Nanotechnology Materials and Devices Conference, Vol.FrP1-2.6, Monterey, Oct. 2010.
85. Maehashi Kenzo, Kishimoto Takaomi, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Fabrication of High-Performance Voltage Inverters Based on Carbon Nanotube Field-Effect Transistors,
2010 IEEE Nanotechnology Materials and Devices Conference, Vol.FrP1-2.4, Monterey, Oct. 2010.
86. Hakamata Yasufumi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Improving Faint-Signal Sensitivity of Electrolyte-Gated Carbon Nanotube Field-Effect Transistors Using External Noise,
2010 IEEE Nanotechnology Materials and Devices Conference, Vol.WeA1-1.3, Monterey, Oct. 2010.
87. Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Label-Free Immunosensors Based on Aptamer-Modified Graphene Field-Effect Transistors,
2010 International Conference on Solid State Devices and Materials, Vol.J-5-1, Tokyo, Sep. 2010.
88. Hakamata Yasufumi, Yasuhide Ohno, Maehashi Kenzo, Kasai Seiya, Inoue Koichi and Matsumoto Kazuhiko :
Signal Enhancement Based on Stochastic Resonance in Carbon Nanotube Field-Effect Transistors,
4th International Conference on Sensing Technology, Lecce, Italy, Jun. 2010.
89. Maehashi Kenzo, Yasuhide Ohno and Matsumoto Kazuhiko :
Highly Sensitive Electrical Detection of Chemical and Biological Molecules Based on Graphene Field-Effect Transistors,
4th International Conference on Sensing Technology, Lecce, Italy, Jun. 2010.
90. Abe Masuhiro, Murata Katsuyuki, Yasuhide Ohno and Matsumoto Kazuhiko :
Improvement in sensitivity of biosensor by Schottky barrier control carbon nanotube field effect transistor,
The 37th International Symposium on Compound Semiconductors, Takamatsu, Jun. 2010.
91. Ohori Takahiro, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Floating-Gated Carbon-Nanotube Memory with Dot Structuresg Process,
The 37th International Symposium on Compound Semiconductors, Takamatsu, Jun. 2010.
92. Yamamoto Yasuki, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Improvement of Transfer Characteristics in CNTFETs with Au Nano-Clusters by Electrical Heating Process,
The 37th International Symposium on Compound Semiconductors, Takamatsu, Jun. 2010.
93. Matsumoto Kazuhiko, Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo and Inoue Koichi :
Graphene quantum dots with two constrictions,
2009 International Symposium on Advanced Nanostructures and Nano-Devices, Hawaii, Dec. 2009.
94. Kishimoto Takaomi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Logic gates based on carbon nanotube field-effect transistors with SiNx passivation films,
22nd International Microprocesses and Nanotechnology Conference, Vol.19A-8-4, Sapporo, Nov. 2009.
95. Ohori Takahiro, Nagaso Satoshi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Single-hole charging and discharging phenomena in carbon nanotube field-effect transistor-based nonvolatile memory,
22nd International Microprocesses and Nanotechnology Conference, Vol.19D-10-9, Sapporo, Nov. 2009.
96. Tsuji Tomoki, Inoue Koichi, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Raman scattering of single-walled carbon nanotubes in early growth stages using laser-irradiated chemical vapor deposition,
22nd International Microprocesses and Nanotechnology Conference, Vol.18B-6-4, Sapporo, Nov. 2009.
97. Maehashi Kenzo, Iwasaki Shin, Yasuhide Ohno, Kishimoto Takaomi, Inoue Koichi and Matsumoto Kazuhiko :
Aligned single-walled carbon nanotube arrays on patterned SiO2/Si substrates,
22nd International Microprocesses and Nanotechnology Conference, Vol.18C-6-5, Sapporo, Nov. 2009.
98. Yasuhide Ohno, Maehashi Kenzo, Yamashiro Yusuke and Matsumoto Kazuhiko :
Electrolyte-Gated Graphene Field-Effect Transistors,
2009 International Conference on Solid State Device and Materials, Vol.E-8-6, Sendai, Oct. 2009.
99. Yamashiro Yusuke, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Formation of Quantum Dots in Graphene with Constrictions,
2009 International Conference on Solid State Device and Materials, Vol.E-8-8, Sendai, Oct. 2009.
100. Matsumoto Kazuhiko, Iwasaki Shin, Kamimura Takafumi, Inoue Koichi, Kishimoto Takaomi, Yasuhide Ohno and Maehashi Kenzo :
Direction Control of Carbon Nanotube Growth on Corrugated SiO2 using Casimir Force and its Application to High Current FET", International Symposium on Carbon Nanotube Nanoelectronics,
2009 International Symposium on Carbon Nanotube Nanoelectronics, 松島, Jun. 2009.
101. Kawahara Toshio, Yamaguchi Satarou, Maehashi Kenzo, Yasuhide Ohno, Matsumoto Kazuhiko and kawai Tomoji :
Robust noise modulation of nonlinearity in carbon nanotube field-effect transistors,
2009 International Symposium on Carbon Nanotube Nanoelectronics, 松島, Jun. 2009.
102. Yamamoto Yasuki, Maehashi Kenzo, Yasuhide Ohno and Matsumoto Kazuhiko :
Electrical Detection of Negatively Charged Protein Using n-type Carbon Nanotube Field-Effect Transistor Biosensors,
2009 International Symposium on Carbon Nanotube Nanoelectronics, 松島, Jun. 2009.
103. Matsumoto Kazuhiko, Yasuhide Ohno and Kamimura Takafumi :
Carbon Nanotube Quantum Nanodevice,
13th Advanced Heterostructures and Nanostructures Workshop, Hawaii, Dec. 2008.
104. Yamamoto Yasuki, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Noise Reduction of Carbon Nanotube Field-effect Transistor Biosensors using Alternating Current Measurement,
21st International Microprocesses and Nanotechnology Conference, Fukuoka, Oct. 2008.
105. Yamamoto Yasuki, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Carbon Nanotube Field-Effect Transistor Biosensors with High Signal-to-Noise Ratio Using Alternating Current Measurement,
2008 The IASTED International Conference on Nanotechnology and Applications, Vol.615-043, Crete, Sep. 2008.
106. Yasuhide Ohno, Asai Yoshihiro, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Room Temperature Operation of Carbon Nanotube Single-Hole Transistors Fabricated by Shadow Evaporation Methods,
2008 International Conference on Solid State Device and Materials, Vol.F-8-2, Tsukuba, Sep. 2008.
107. Kamimura Takafumi, Yasuhide Ohno and Matsumoto Kazuhiko :
Conversion Between Particle Nature and Wave Nature of Hole in Single-walled Carbon Nanotube Transistor by Gate Voltage,
2008 International Conference on Solid State Device and Materials, Vol.F-8-1, Tsukuba, Sep. 2008.
108. Nagaso Satoshi, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi, Yamamoto Kazuhiko and Matsumoto Kazuhiko :
Low-Energy Oxygen Ion Irradiation Effects on Carbon Nanotube Field-Effect Transistors with Passivation Films,
2008 International Conference on Solid State Device and Materials, Vol.H-3-2, Tsukuba, Sep. 2008.
109. Matsumoto Kazuhiko, Maehashi Kenzo, Yasuhide Ohno and Yamamoto Yasuki :
High Sensitive Carbon Nanotube FET Biosensor with Micro Fluid System and AC Measurement System,
9th International Conference on the Science and Application of Nanotubes, Montpellier, France, Jun. 2008.
110. Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Suppression of Current Fluctuations in Carbon Nanotube Field-Effect Transistors by Applying Alternating Current,
2008 International Conference on Nanoscience and Nanotechnology, Victoria, Australia, Feb. 2008.
111. Nishiguchi Kohei, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi, Yamamoto Kazuhiko and Matsumoto Kazuhiko :
Effects by Low-Energy Ion Irradiation in Transport Characteristics of n-type Carbon Nanotube Field-Effect Transistors with Passivation Films,
2008 International Conference on Nanoscience and Nanotechnology, Victoria, Australia, Feb. 2008.
112. Asai Yoshihiro, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Coulomb Oscillation of Single-Walled Carbon Nanotube Field-Effect Transistors with Insulator,
2008 International Conference on Nanoscience and Nanotechnology, Victoria, Australia, Feb. 2008.
113. Kamimura Takafumi, Yasuhide Ohno and Matsumoto Kazuhiko :
Single Charge Detection Using Single-Walled Carbon Nanotube Single-Hole Transistor,
2007 International Semiconductor Device Research Symposium, College Park, USA, Dec. 2007.
114. Nishiguchi Kohei, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Improvement of Hysteresis Characteristics in Carbon Nanotube Field-Effect Transistors,
2007 International Symposium on Compound Semiconductors, Kyoto, Oct. 2007.
115. Asai Yoshihiro, Fujiwara Yasuyuki, Maehashi Kenzo, Yasuhide Ohno, Inoue Koichi and Matsumoto Kazuhiko :
Laser-Irradiated Chemical Vapor Deposition for Growth of Single-Walled Carbon Nanotubes,
2007 International Symposium on Compound Semiconductors, Kyoto, Oct. 2007.
116. Yasuhide Ohno, Asai Yoshihiro, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Coulomb Oscillations at Room-Temperature of Single-Walled Carbon Nanotube Field-Effect Transistors,
2007 NSTI nanotechnology Conference and Trade Show, Vol.WE78.612, Santa Clara, USA, May 2007.
117. Yasuhide Ohno, Narumi Kazuki, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Spin injection to single-walled carbon nanotubes through thin tunnel barriers,
28th International Conference on the Physics of Semiconductors, Vol.TuA3q.15, Wien, Jul. 2006.
118. Nishiguchi Kohei, Yasuhide Ohno, Maehashi Kenzo, Inoue Koichi and Matsumoto Kazuhiko :
Edge-Contact Carbon Nanotube Field-Effect Transistors with No Hysteresis Characteristics,
28th International Conference on the Physics of Semiconductors, Vol.TuA3q.16, Wien, Jul. 2006.
119. Inoue Koichi, Yasuhide Ohno, Maehashi Kenzo and Matsumoto Kazuhiko :
Electronic states of single-walled carbon nanotubes with substitutional impurities,
28th International Conference on the Physics of Semiconductors, Vol.TuA3q.9, Wien, Jul. 2006.

Proceeding of Domestic Conference:

1. FURUKAWA Chikato, Yasuhide Ohno and Masao Nagase :
SiC上エピタキシャルグラフェンFETのpH依存性,
2024年第71回応用物理学会春季学術講演会, Vol.24a-1BM-8, Mar. 2024.
2. MATSUMURA Hiromu, MORI Yusuke, TAKASHIMA Hiroshi, Yasuhide Ohno, Masao Nagase, HOANG ANH TUNG, Atsushi Tabata and Hideaki Nagamune :
HisタグB-domainを用いたSiC上グラフェンへの抗体配向修飾法,
2024年第71回応用物理学会春季学術講演会, Vol.24a-1BM-7, Mar. 2024.
3. TAKESHITA Ryusei, Yasuhide Ohno and Masao Nagase :
SiC上グラフェンの液滴による電位差発生のイオン濃度依存性,
2024年第71回応用物理学会春季学術講演会, Vol.23p-32A-2, Mar. 2024.
4. YUKAWA Ryoma, TOYODA Rensei, HAMAMOTO Kouta, Yasuhide Ohno and Masao Nagase :
エピタキシャルグラフェン上の液中フォースカーブ計測,
2024年第71回応用物理学会春季学術講演会, Vol.22p-P07-33, Mar. 2024.
5. MOTOKI Ohi, Hayate Murakami, KUBO Kohsuke, NAKAGAWA Takeru, Yasuhide Ohno, Masao Nagase and 影島 博之 :
高電圧印加によるグラフェン積層接合の抵抗変化,
第15回「集積化MEMSシンボジウム」, No.M-257, Nov. 2023.
6. Kohki Nabuchi, Yasuhide Ohno and Masao Nagase :
分子修飾によるSiC上グラフェンFETのドーピング制御,
2023 年度 応用物理・物理系学会 中国四国支部 合同学術講演会, Vol.Ap-8, Jul. 2023.
7. TAKUTO Okada, Yasuhide Ohno and Masao Nagase :
Al2O3ナノ粒子を形成したSiC上グラフェンFETのpH依存性,
2023 年度 応用物理・物理系学会 中国四国支部 合同学術講演会, Vol.Ap-7, Jul. 2023.
8. TAKUMA Kuhara, Taichi Kataoka, Yasuhide Ohno and Masao Nagase :
Material discrimination using graphene far-infrared emitters,
第70回応用物理学会春季学術講演会, Vol.17p-B309-14, Mar. 2023.
9. YUSUKE Mori, Hiromu Matsumura, Keita Murayama, TAKESHITA Ryoya, Anh Hoang Tung, Yasuhide Ohno, Masao Nagase, Atsushi Tabata and Hideaki Nagamune :
His-tag 法を用いた SiC 上グラフェンへの抗体配向修飾技術,
第39回「センサ・マイクロマシンと応用システム」シンポジウム, Vol.16P2-P-52, Nov. 2022.
10. Taichi Kataoka, TAKUMA Kuhara, Yasuhide Ohno and Masao Nagase :
SiC 基板上短冊状グラフェンからの遠赤外線放射の観測,
第14回「集積化MEMSシンボジウム」, No.14P2-C-3, Nov. 2022.
11. Fumiya Fukunaga, MOTOKI Ohi, Hayate Murakami, Yasuhide Ohno and Masao Nagase :
グラフェン積層接合への高電界印加による抵抗状態遷移,
第14回「集積化MEMSシンボジウム」, No.14P2-C-2, Nov. 2022.
12. TOMOKI Kusaka, Akihiro Furube, Tetsuro Katayama, Hiroki Kishikawa, Yasuhide Ohno, Masao Nagase and Junichi Fujikata :
SiC 上高品質グラフェンを用いた全光型超高速光スイッチ,
2022年第83回応用物理学会秋季学術講演会, 22p-A402-17, Sep. 2022.
13. Yamauchi Suguru, Shin-ichiro Yanagiya, Yasuhide Ohno, Masao Nagase and Yasuo Minami :
Spectral properties of monolayer graphene grown on 4H-SiC measured by terahertz time domain spectroscopy,
2022年第83回応用物理学会秋季学術講演会, 22p-P02-7, Sep. 2022.
14. Takashi Ohmae, Yasuhide Ohno, Mikito Yasuzawa and Masao Nagase :
塩酸中におけるSiC上グラフェンFETのpH依存性,
2022年度応用物理学・物理系中国四国支部学術講演会, Gp-1, Jul. 2022.
15. Ayumi Shimmen, Tomohiro Kinoshita, Yasuhide Ohno and Masao Nagase :
Anisotropy in droplet power generation by graphene on SiC,
第69回応用物理学会春季学術講演会, Vol.25p-E102-18, Mar. 2022.
16. Taisuke Nakano, Shunsuke Nakamura, Yasuhide Ohno and Masao Nagase :
Tunnel Current Analysis of Structured Water Layer on Epitaxial Graphene,
第69回応用物理学会春季学術講演会, Vol.25p-E102-7, Mar. 2022.
17. Fumiya Fukunaga, Naruse Murakami, Motoki Ohi, Yasuhide Ohno and Masao Nagase :
Current switching in graphene stacked junction,
第69回応用物理学会春季学術講演会, Vol.25p-E102-15, Mar. 2022.
18. 中河 義典, 佐野 雅彦, 岡内 茂樹, Takashi Mukai, Yasuhide Ohno and Masao Nagase :
Fabrication and characterization of 2D material photodetector for image sensor device,
第69回応用物理学会春季学術講演会, Vol.23p-E101-10, Mar. 2022.
19. Taichi Kataoka, Yoshiki Sugiyama, Naruse Murakami, Fumiya Fukunaga, Yasuhide Ohno and Masao Nagase :
Observation of infrared radiation by current injection from graphene on SiC,
第82回応用物理学会秋季学術講演会, Vol.11a-N306-6, Sep. 2021.
20. Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
Evaluation of protein adsorption characteristics on graphene on SiC using immersion Raman spectroscopy,
第68回応用物理学会春季学術講演会, Vol.19p-P01-6, Mar. 2021.
21. Natsuki Sakai, Yasuhide Ohno and Masao Nagase :
In-liquid observation of solid-liquid interface on epitaxial graphene,
第68回応用物理学会春季学術講演会, Vol.17a-Z31-7, Mar. 2021.
22. Tomohiro Kinoshita, Yasuhide Ohno and Masao Nagase :
Influence of the buffer layer on SiC substrates in induced voltage generation by droplets,
第68回応用物理学会春季学術講演会, Vol.16p-Z31-12, Mar. 2021.
23. Tomoki Minami, Shuta Ochi, Yasuhide Ohno and Masao Nagase :
Resistivity of graphene on SiC by water desorption,
第81回応用物理学会秋季学術講演会, Vol.9p-Z29-8, Sep. 2020.
24. Iori Kishinobu, Daiu Akiyama, Hiroki Nakai, Yoshiaki Taniguchi, Yasuhide Ohno, Hideaki Nagamune and Masao Nagase :
Adsorption characteristic of proteins with high pI to a graphene film on SiC substrates,
2020年度 応用物理・物理系学会 中国四国支部 合同学術講演会, Vol.Ga-2, Aug. 2020.
25. Naruse Murakami, Yoshiki Sugiyama, Masaaki Tahara, Yasuhide Ohno and Masao Nagase :
Infrared Radiation Characteristics in Stacked Graphene p-n Junction,
第67回応用物理学会春季学術講演会, Vol.14a-A404-1, Mar. 2020.
26. Shunsuke Nakamura, Jiyao Du, 葛尾 理樹, Yasuhide Ohno and Masao Nagase :
Electrical Transport Properties of Structured Water Layer on Epitaxial Graphene,
第67回応用物理学会春季学術講演会, Vol.13p-A401-6, Mar. 2020.
27. Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
Protein adsorption characteristic and carrier conductance of graphene on SiC,
第67回応用物理学会春季学術講演会, Vol.13a-A401-6, Mar. 2020.
28. Yasuhide Ohno, Yuto Kawagoshi, Yoshiaki Taniguchi and Masao Nagase :
Role of an electric-double layer on solution-gated graphene FETs,
第67回応用物理学会春季学術講演会, Vol.13a-A401-5, Mar. 2020.
29. Yoshiki Sugiyama, Jiyao Du, Takaya Kujime, Yasuhide Ohno and Masao Nagase :
SiC上グラフェンの赤外線放射特性の観測,
2019年第80回応用物理学会秋季学術講演会, Vol.18a-E308-3, Sep. 2019.
30. Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
ホール効果測定によるSiC上グラフェンのタンパク質吸着特性評価,
2019年第80回応用物理学会秋季学術講演会, Vol.18p-E308-14, Sep. 2019.
31. Naori Yamazoe, Yuki Ohsaka, Yoshiaki Taniguchi, Masao Nagase, Yasuhide Ohno, Toshihiro Okamoto and Masanobu Haraguchi :
金ナノ粒子のプラズモン加熱を用いた穴あきグラフェンの作製,
レーザー学会学術講演会第39回年次大会, No.14-6, Jan. 2019.
32. Hiromichi Wariishi, Masaki Kuzuo, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
溶液中におけるSiC上グラフェンFETのドリフト評価,
第10回「集積化MEMSシンボジウム」, 01am2-C-5-(3pp), Nov. 2018.
33. Yoshiaki Taniguchi, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa and Mikito Yasuzawa :
SiC 上グラフェンFETを用いたアビジン-イミノビオチン相互作用の観測,
第10回「集積化MEMSシンボジウム」, 01am2-C-1-(3pp), Nov. 2018.
34. Shuta Ochi, Hitoshi Teratani, Makoto Kitaoka, Yasuhide Ohno and Masao Nagase :
SiC上グラフェンの高感度ガス応答,
第10回「集積化MEMSシンボジウム」, 31pm2-C-2-(3pp), Oct. 2018.
35. Yuto Kawagoshi, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
グラフェン FET 特性の緩衝液濃度依存性,
第10回「集積化MEMSシンボジウム」, 30pm2-A-3-(3pp), Oct. 2018.
36. Masaki Kuzuo, Yusuke Yamada, Kazushi Matsui, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
Mechanical Properties of Structured Water Layer on Epitaxial Graphene,
第79回応用物理学会秋季学術講演会(応物2018秋), No.21a-311-14, 15-216-(1pp), Sep. 2018.
37. 小野 尭生, Yoshiaki Taniguchi, 牛場 翔太, 金井 康, 前橋 兼三, 井上 恒一, 渡邊 洋平, 中北 愼一, 鈴木 康夫, 河原 敏男, 木村 雅彦, Yasuhide Ohno, Masao Nagase and 松本 和彦 :
Influenza Virus Detection Using Glycan-Functionalized SiC Graphene,
第79回応用物理学会秋季学術講演会(応物2018秋), No.20p-311-4, 15-186-(1pp), Sep. 2018.
38. 谷口 嘉昭, 高村 真琴, 谷保 芳孝, Yasuhide Ohno and Masao Nagase :
The characteristics of p-type graphene film for protein adsorptions,
第79回応用物理学会秋季学術講演会(応物2018秋), No.20p-311-3, 15-185-(1pp), Sep. 2018.
39. Daiu Akiyama, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
pH dependence of protein adsorption to a graphene film on SiC substrate,
第79回応用物理学会秋季学術講演会(応物2018秋), No.20p-311-2, 15-184-(1pp), Sep. 2018.
40. 谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
pH control of avidin adsorption by iminobiotin modified graphene film,
第65回応用物理学会春季学術講演会(応物2018春), No.18a-C202-10, 15-057-(1pp), Mar. 2018.
41. Du Jiyao, Kimura Yukinobu, Tahara Masaaki, Matsui Kazushi, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Vertically stacked graphene tunneling junction with insulative water layer,
第65回応用物理学会春季学術講演会(応物2018春), No.18a-C202-11, 15-058-(1pp), Mar. 2018.
42. Hitoshi Teratani, Makoto Kitaoka, Kazushi Matsui, Masaaki Tahara, Yasuhide Ohno and Masao Nagase :
Evaluation of water doping effect on graphene on SiC,
第65回応用物理学会春季学術講演会(応物2018春), No.17a-C202-7, 15-007-(1pp), Mar. 2018.
43. 田原 雅章, 河村 祐輔, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェン高品質化に向けたグラフェン成長過程の解明,
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会, P8-(4pp), Jan. 2018.
44. 河村 祐輔, 森本 征士, 北岡 誠, 田原 雅章, Yasuhide Ohno and Masao Nagase :
顕微ラマン分光法による機能化 iC 上グラフェンの応力とキャリア密度の定量評価,
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会, P9-(4pp), Jan. 2018.
45. 谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
分子修飾技術を用いたグラフェン表面のタンパク質吸着抑制,
平成 29 年度第 4 回半導体エレクトロニクス部門委員会・講演会, P10-(4pp), Jan. 2018.
46. 谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
ホスホリルコリン修飾グラフェンのタンパク質吸着特性,
第9回「集積化MEMSシンボジウム」, 02am2-B-2-(3pp), Nov. 2017.
47. 杉岡 賢人, 谷口 嘉昭, Tsubasa Miki, 田原 雅章, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Keiji Minagawa, Yasushi Imada and Mikito Yasuzawa :
Modified molecule dependence in hydrophilic treatment on SiC graphene,
第78回応用物理学会秋季学術講演会(応物2017秋), No.8a-C16-16, 15-186-(1pp), Sep. 2017.
48. 松井 一史, 中村 晃大, 北岡 誠, 谷口 嘉昭, Yasuhide Ohno and Masao Nagase :
Observation of structure water layer graphene on SiC using Kelvin Force Microscope,
第78回応用物理学会秋季学術講演会(応物2017秋), No.7p-C16-14, 15-165-(1pp), Sep. 2017.
49. 谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
ホスホリルコリン修飾によるグラフェン表面のタンパク質吸着抑制,
電子デバイス研究会(ED), 13, Aug. 2017.
50. 森高 恭平, Yasuhide Ohno and Masao Nagase :
イオン性ゲルを用いたSiC上グラフェンデバイスの特性評価,
第8回集積化 MEMS 技術研究ワークショップ, No.P8, Jul. 2017.
51. 木村 幸将, Yasuhide Ohno and Masao Nagase :
SiCグラフェン積層構造における電気特性の角度依存性,
第8回集積化 MEMS 技術研究ワークショップ, No.P1, Jul. 2017.
52. 礒合 俊輔, Mikito Yasuzawa, Yasuhide Ohno and Masao Nagase :
Electrical characteristic evaluation of graphene on SiC,
電気化学会第84回大会, Mar. 2017.
53. 谷口 嘉昭, 三木 翼, 光野 琢仁, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
分子修飾機能化による SiC 上グラフェンの非特異吸着の抑制,
第64回応用物理学会春季学術講演会(応物2017春), No.15a-B6-7, 15-085-(1pp), Mar. 2017.
54. 北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェンの水吸着によるキャリア密度変化,
第64回応用物理学会春季学術講演会(応物2017春), No.15a-B6-6, 15-084-(1pp), Mar. 2017.
55. 朴 理博, Masao Nagase and Yasuhide Ohno :
集束イオンビームを用いたステンシルリソグラフィ技術のための Sub10nm パターンの作製,
第64回応用物理学会春季学術講演会(応物2017春), No.15a-304-2, Mar. 2017.
56. 谷口 嘉昭, Yasuhide Ohno and Masao Nagase :
SiC上グラフェンのタンパク質吸着特性,
サイエンスプラザ2016, No.52, Nov. 2016.
57. 谷口 嘉昭, 三木 翼, 光野 琢仁, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
新規合成分子を用いた表面修飾による単結晶グラフェンの親水化,
第8回集積化MEMSシンボジウム, No.25pm4-PM-017, Oct. 2016.
58. 北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェンのシート抵抗の湿度依存性,
第8回集積化MEMSシンボジウム, No.25pm4-PM-016, Oct. 2016.
59. Yasuhide Ohno, 光野 琢仁, 谷口 嘉昭 and Masao Nagase :
グラフェン本来のイオンセンシング特性,
第77回応用物理学会秋季学術講演会(応物2016秋), No.15p-A33-10, Sep. 2016.
60. 北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェンの水脱離による導電率変化,
第77回応用物理学会秋季学術講演会(応物2016秋), No.15p-A33-2, Sep. 2016.
61. 山田 祐輔, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
走査プローブ顕微鏡を用いた SiC 上グラフェンの実効ヤング率計測,
第77回応用物理学会秋季学術講演会(応物2016秋), No.13a-A32-4, Sep. 2016.
62. 森本 征士, 有月 琢哉, 青木 翔, Yasuhide Ohno and Masao Nagase :
顕微ラマン分光法による SiC 上グラフェンの応力とキャリア密度の面内分布評価,
第77回応用物理学会秋季学術講演会(応物2016秋), No.13a-A32-3, Sep. 2016.
63. 中村 晃大, 有月 琢哉, 高嶋 和也, 永濱 拓也, 北岡 誠, Masao Nagase and Yasuhide Ohno :
エピタキシャルグラフェン上の吸着水層,
第63回応用物理学会春季学術講演会(応物2016春), No.22a-S011-13, Mar. 2016.
64. 楊 順涵, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
ロジウム - 二硫化モリブデン - グラフェンヘテロ接合の電気特性に関する研究,
第63回応用物理学会春季学術講演会(応物2016春), No.22a-S011-10, Mar. 2016.
65. Yasuhide Ohno, Masao Nagase and 松本 和彦 :
Cat-CVD 法による SiNx 絶縁膜を用いた SiC グラフェン FET の作製,
第76回応用物理学会秋季学術講演会(応物2015秋), No.15a-2T-1, Sep. 2015.
66. 永濱 拓也, 小林 慶祐, 有月 琢哉, 高嶋 和也, 青木 翔, Yasuhide Ohno and Masao Nagase :
雰囲気制御による SiC 上グラフェンの抵抗値変化,
第76回応用物理学会秋季学術講演会(応物2015秋), No.15a-2T-9, Sep. 2015.

Et cetera, Workshop:

1. Masao Nagase and Yasuhide Ohno :
SiC上グラフェンを用いた黒体輻射エミッタ,
LED総合フォーラム2020in徳島, No.P-15, 101-102, Feb. 2020.
2. Masao Nagase and Yasuhide Ohno :
単結晶グラフェン積層接合デバイス,
LED総合フォーラム2019in徳島, No.P-14, 85-86, Feb. 2019.
3. Masao Nagase, Yasuhide Ohno and Mikito Yasuzawa :
集束イオンビーム技術によるナノ電極プローブの開発,
社会産業理工学研究交流会2018, No.No.27, Sep. 2018.
4. Masao Nagase and Yasuhide Ohno :
大面積単結晶グラフェン膜の合成とデバイス応用,
計量計測展2018, Vol.M-34-18, Sep. 2018.

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

  • エピタキシャルグラフェンを用いた高出力テラヘルツLEDの実現 (Project/Area Number: 21H01394 )
  • Charge-transfer type graphene-FET biosensors using epitaxial graphene film. (Project/Area Number: 19H02582 )
  • Position-controlled graphene with high quality and glycan-functionalized graphene devices for influenza virus (Project/Area Number: 15H03986 )
  • High performance arrayed graphene-based image biosensors (Project/Area Number: 15H03551 )
  • Study on heterogeneous integration of graphene device (Project/Area Number: 26289107 )
  • Control of characteristics by modifying graphene surface and device application (Project/Area Number: 25110007 )
  • Band-gap generation by applying an effective electric field using ionic-liquid gate and nanodevice fabrication (Project/Area Number: 24310105 )
  • Biosensors based on graphene field-effect transistors (Project/Area Number: 22760541 )
  • Microfluidic and Label-free Multi-biosensors based on Carbon Nanotube Microelectrodes (Project/Area Number: 19510129 )
  • Carbon nanotube Biosensor (Project/Area Number: 19054011 )
  • Search by Researcher Number (90362623)