Search:
Tokushima UniversityInstitute of Post-LED Photonics
Tokushima UniversityResearch ClustersResearch Clusters (Registered)2203021 極薄膜多層構造を用いた深紫外光ディテクターの開発
Tokushima UniversityFaculty of Science and TechnologyDepartment of Science and TechnologyElectrical and Electronic EngineeringMaterial Science and Device
Tokushima UniversityGraduate School of Sciences and Technology for InnovationScience and TechnologyElectrical and Electronic EngineeringMaterial Science and Device
(Files for researchmap) [PDF manual] [Auto-propagate to researchmap]

Research

Personal Web Page

Field of Study

電気電子工学

Subject of Study

電子・電気材料工学 (窒化物半導体, light emitting diode, laser diode, transistor, process)

Book / Paper

Academic Paper (Judged Full Paper):

1. Yuusuke Takashima, FURUTA Shunsuke, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Broadband Ag/SiO2/Fe/TiO2 ultrathin planar absorber with a wide acceptance angle from visible to near-infrared regions,
Optical Materials Express, Vol.14, No.3, 778-791, 2024.
(Tokushima University Institutional Repository: 119044)
2. Tomita Atsushi, Miyagawa Takumi, Hirayama Hideki, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy.,
Scientific Reports, Vol.13, 3308.1-7, 2023.
(DOI: 10.1038/s41598-023-30489-z)
3. Kentaro Nagamatsu, Miyagawa Takumi, Tomita Atsushi, Hirayama Hideki, Yuusuke Takashima and Yoshiki Naoi :
High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy.,
Scientific Reports, Vol.13, 2438, 2023.
(DOI: 10.1038/s41598-023-29150-6)
4. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Ultra-thin deep ultraviolet perfect absorber using an Al/TiO2/AlN system,
Optics Express, Vol.30, No.24, 44229-44239, 2022.
(Tokushima University Institutional Repository: 117757,   DOI: 10.1364/OE.474847)
5. Takaaki Koma, Naoya Doi, Akihiro Suzuki, Kentaro Nagamatsu, Takeshi Yasui, Koji Yasutomo, Akio Adachi, Takeo Minamikawa and Masako Nomaguchi :
Major target for UV-induced complete loss of HIV-1 infectivity: A model study of single-stranded RNA enveloped viruses,
Frontiers in Virology, Vol.2, 994842, 2022.
(DOI: 10.3389/fviro.2022.994842)
6. Kentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, Reiya Aono, Hideki Hirayama, Yuusuke Takashima and Yoshiki Naoi :
Reduction of parasitic reaction in high temperature AlN growth by jet stream gas flow metal organic vapor phase epitaxy,
Scientific Reports, Vol.12, 7662, 2022.
(Tokushima University Institutional Repository: 117388,   DOI: 10.1038/s41598-022-10937-y)
7. Akihiro Suzuki, Akira Emoto, Akihiro Shirai and Kentaro Nagamatsu :
Ultraviolet Light-Emitting Diode (UV-LED) Sterilization of Citrus Bacterial Canker Disease Targeted for Effective Decontamination of Citrus Sudachi Fruit,
Biocontrol Science, Vol.27, No.1, 1-7, 2022.
(DOI: 10.4265/bio.27.1)
8. Yuusuke Takashima, Atsuki Sasada, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength,
Proceedings of SPIE, Vol.11926, 1192618-1-1192618-4, 2021.
(Tokushima University Institutional Repository: 116674,   DOI: 10.1117/12.2616175,   Elsevier: Scopus)
9. Takeo Minamikawa, Takaaki Koma, Akihiro Suzuki, Takahiko Mizuno, Kentaro Nagamatsu, Hideki Arimochi, Koichiro Tsuchiya, Kaoru Matsuoka, Takeshi Yasui, Koji Yasutomo and Masako Nomaguchi :
Quantitative evaluation of SARS-CoV-2 inactivation using a deep ultraviolet light-emitting diode.,
Scientific Reports, Vol.11, 5070, 2021.
(Tokushima University Institutional Repository: 117265,   DOI: 10.1038/s41598-021-84592-0,   PubMed: 33658595)
10. Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura and Hiroshi Amano :
Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces,
Applied Physics Letters, Vol.117, No.242104, 2020.
(DOI: 10.1063/5.0028516)
11. Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura and Hiroshi Amano :
Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces,
Applied Physics Letters, Vol.117, No.102102, 2020.
(DOI: 10.1063/5.0010774)
12. Tanaka Atsushi, Kentaro Nagamatsu, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal and Amano Hiroshi :
V-shaped dislocations in a GaN epitaxial layer on GaN substrate,
AIP Advances, Vol.9, No.9, 2019.
(Tokushima University Institutional Repository: 114980,   DOI: 10.1063/1.5114866)
13. Z. Ye, S. Nitta, Kentaro Nagamatsu, N. Fujimoto, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek and H. Amano :
Ammonia decomposition and reaction by high-resolution mass spectrometry for group III Nitride epitaxial growth,
Journal of Crystal Growth, Vol.516, 63-66, 2019.
(DOI: 10.1016/j.jcrysgro.2019.03.025)
14. Kentaro Nagamatsu, Y. Ando, T. Kono, H. Cheong, S. Nitta, Y. Honda, M. Pristovsek and H. Amano :
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE,
Journal of Crystal Growth, Vol.512, 78-83, 2019.
(DOI: 10.1016/j.jcrysgro.2019.02.013)
15. K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, Kentaro Nagamatsu, H. Yoshida and H. Miyake :
Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing,
Journal of Crystal Growth, Vol.510, 13-17, 2019.
(DOI: 10.1016/j.jcrysgro.2019.01.011)
16. Kentaro Nagamatsu, Xiaotong Liu, Kenjiro Uesugi and Hideto Miyake :
Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN,
Japanese Journal of Applied Physics, Vol.58, No.SC, SCCC07, 2019.
(DOI: 10.7567/1347-4065/ab07a1,   Elsevier: Scopus)
17. Kentaro Nagamatsu, Y. Ando, Z. Ye, O. Barry, A. Tanaka, M. Deki, S. Nitta, Y. Honda, M. Pristovsek and H. Amano :
Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy,
Japanese Journal of Applied Physics, Vol.57, No.10, 105501, 2018.
(DOI: 10.7567/JJAP.57.105501)
18. X. Yang, S. Nitta, M. Pristovsek, Y. Liu, Kentaro Nagamatsu, M. Kushimoto, Y. Honda and H. Amano :
Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy,
Applied Physics Express, Vol.11, No.5, 051002, 2018.
(DOI: 10.7567/APEX.11.051002)
19. Noriko Usami, Y. Ando, A. Tanaka, Kentaro Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Correlation between dislocation and leakage current of p-n diodes on free standing GaN substrate,
Applied Physics Letters, Vol.112, No.18, 182106, 2018.
(DOI: 10.1063/1.5024704)
20. X. Yang, S. Nitta, Kentaro Nagamatsu, S. Bae, H. Lee, Y. Liu, M. Pristovsek, Y. Honda and H. Amano :
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metal-organic vapor phase epitaxy,
Journal of Crystal Growth, Vol.482, 1-8, 2018.
(DOI: 10.1016/j.jcrysgro.2017.10.036)
21. A. Tanaka, Y. Ando, Kentaro Nagamatsu, M. Deki, H. Cheong, B. Ousmane, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
m-Plane GaN Schottky barrier diodes fabricated with MOVPE layer on several off-angled m-plane GaN substrate,
Physica Status Solidi (A) Applications and Materials Science, Vol.215, No.9, 1700645, 2017.
(DOI: 10.1002/pssa.201700645)
22. A. Tanaka, O1. Barry, Kentaro Nagamatsu, J. Matsushita, M. Deki, Y. Ando, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE,
Physica Status Solidi (A) Applications and Materials Science, Vol.214, No.8, 1770150, 2017.
(DOI: 10.1002/pssa.201770150)
23. A. Tanaka, O1. Barry, Kentaro Nagamatsu, J. Matsushita, M. Deki, Y. Ando, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE,
Physica Status Solidi (A) Applications and Materials Science, Vol.214, No.8, 1600829, 2017.
(DOI: 10.1002/pssa.201600829)
24. Kentaro Nagamatsu, S. Nitta, Z. Ye, H. Nagao, S. Miki, Y. Honda and H. Amano :
Decomposition of trimethylgalliumand adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system,
Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.254, No.8, 1600737, 2017.
(DOI: 10.1002/pssb.201600737)
25. O1. Barry, A. Tanaka, Kentaro Nagamatsu, S. Bae, K. Lekhal, J. Matsushita, M. Deki, S. Nitta, Y. Honda and H. Amano :
Effect of V/III ratio on the surface morphology and electrical properties of m-plane (1010) GaN homoepitaxial layers,
Journal of Crystal Growth, Vol.468, 552-556, 2017.
(DOI: 10.1016/j.jcrysgro.2016.12.012)
26. Noriko Usami, R. Miyagoshi, A. Tanaka, Kentaro Nagamatsu, M. Kushimoto, M. Deki, S. Nitta, Y. Honda and H. Amano: :
Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes,
Physica Status Solidi (A) Applications and Materials Science, Vol.214, No.8, 1600837, 2017.
(DOI: 10.1002/pssa.201600837)
27. Yasunori Kozuki, Kentaro Nagamatsu, M. Olsson, P. Song, M. Deki, S. Nitta, Y. Honda and H. Amano :
Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer,
Japanese Journal of Applied Physics, Vol.55, No.5S, 05FB06, 2016.
(DOI: 10.7567/JJAP.55.05FB06)
28. T. Yamamoto, A. Tamura, Noriko Usami, T. Mitsunari, Kentaro Nagamatsu, S. Nitta, Y. Honda and H. Amano :
Evaluation of excess in during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering,
Japanese Journal of Applied Physics, Vol.55, No.5S, 05FD03, 2016.
(DOI: 10.7567/JJAP.55.05FD03)
29. Yasunori Kozuki, A. Ohta, S. Miyazaki, Kentaro Nagamatsu, H. Lee, M. Olsson, Z. Ye, M. Deki, Y. Honda and H. Amano :
The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer,
Japanese Journal of Applied Physics, Vol.55, No.1, 10303, 2015.
(DOI: 10.7567/JJAP.55.010303)
30. Takahiro Kasai, Keiichiro Nonaka, K. Ban, K. Nagata, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2101--2103, 2010.
(DOI: 10.1002/pssc.200983591)
31. Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Takahiro Kasai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki :
Atomic layer epitaxy of AlGaN,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.10, 2368-2370, 2010.
(DOI: 10.1002/pssc.200983862)
32. Keiichiro Nonaka, Takahiro Kasai, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Defects in highly Mg-doped AlN,
Physica Status Solidi (A) Applications and Materials Science, Vol.207, No.6, 1299-1301, 2010.
(DOI: 10.1002/pssa.200983504)
33. K. Nagata, T. Ichikawa, K. Takeda, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient,
Physica Status Solidi (A) Applications and Materials Science, Vol.207, No.6, 1393-1396, 2010.
(DOI: 10.1002/pssa.200983448)
34. T. Mori, Kentaro Nagamatsu, Keiichiro Nonaka, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.6, No.12, 2621-2625, 2009.
(DOI: 10.1002/pssc.200982547)
35. K. Nagata, K. Takeda, T. Ichikawa, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Activation of Mg-Doped p-type Al0.17Ga0.83N in Oxygen Ambient,
Japanese Journal of Applied Physics, Vol.48, No.10R, 101002, 2009.
(DOI: 10.1143/JJAP.48.101002)
36. Kentaro Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Activation energy of Mg in Al0.25Ga0.75N and Al0.5Ga0.5N,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.6, No.S2-2, S437-S439, 2009.
(DOI: 10.1002/pssc.200880810)
37. M. Suzuki, S. Sawai, K. Fukui, Kentaro Nagamatsu and H. Amano :
Photoluminescence and excitation spectrum of Mg-doped p-type AlxGa1-xN,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.6, No.S2, S759-S762, 2009.
(DOI: 10.1002/pssc.200880905)
38. Takahiro Kasai, K. Nagata, T. Mori, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer,
Journal of Crystal Growth, Vol.311, No.10, 2850-2852, 2009.
(DOI: 10.1016/j.jcrysgro.2009.01.028)
39. Kentaro Nagamatsu, Narihito Okada, Naofumi Kato, Takafumi Sumii, Akira Bandoh, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki :
Effect of c-plane sapphire misorientation on the growth of AIN by high-temperature MOVPE,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.5, No.9, 3048-3050, 2008.
(DOI: 10.1002/pssc.200779226)
40. Kentaro Nagamatsu, N. Okada, Kunihiko Sugimura, Shyouzo Tsuzuki, F. Mori, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN,
Journal of Crystal Growth, Vol.310, No.7-9, 2326-2329, 2008.
(DOI: 10.1016/j.jcrysgro.2007.11.152)
41. K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, Kentaro Nagamatsu, T. Kawashima, K. Balkrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh :
High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate,
Physica Status Solidi (A) Applications and Materials Science, Vol.204, No.6, 2000-2004, 2007.
(DOI: 10.1002/pssa.200674809)
42. H. Kasugai, Kentaro Nagamatsu, Y. Miyake, A. Honshio, T. Kawashima, K. Iida, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Kinoshita and H. Shiomi :
Light extraction process in moth-eye structure,
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.3, No.6, 2165-2168, 2006.
(DOI: 10.1002/pssc.200565319)
43. Norio Tsuyukuchi, Kentaro Nagamatsu, Yoshinobu Hirose, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki :
Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact,
Japanese Journal of Applied Physics, Vol.45 Part 2, No.8-11, L319, 2006.
(DOI: 10.1143/JJAP.45.L319,   Elsevier: Scopus)

Academic Paper (Unrefereed Paper):

1. Suzuki Akihiro, Kunihiro Otsuka, Hiroki Takanari, Kentaro Nagamatsu and Akihiro Shirai :
次世代光による細胞光応答の解明,
LED総合フォーラム 2020 in 徳島 論文集, Vol.P-17, 105-106, 2020.

Review, Commentary:

1. Takeo Minamikawa, Takaaki Koma, Suzuki Akihiro, Kentaro Nagamatsu, Takeshi Yasui, Koji Yasutomo and Masako Nomaguchi :
Inactivation of SARS-CoV-2 by deep ultraviolet light emitting diode: A review,
Japanese Journal of Applied Physics, Vol.60, No.9, 090501, Aug. 2021.
(DOI: 10.35848/1347-4065/ac19d1)
2. Takeo Minamikawa, Takaaki Koma, 鈴木 昭浩, Kentaro Nagamatsu, Takeshi Yasui, Koji Yasutomo and Masako Nomaguchi :
Withコロナ時代に向けた深紫外LEDの活用法,
クリーンテクノロジー, Vol.31, No.6, 1-5, Jun. 2021.
(CiNii: 1520857063623582336)
3. Takeo Minamikawa, Takaaki Koma, 鈴木 昭浩, Kentaro Nagamatsu, Takeshi Yasui, Koji Yasutomo and Masako Nomaguchi :
深紫外LEDによる新型コロナウイルス不活化への試み,
OPTRONICS, Vol.40, No.6, 132-137, May 2021.
4. Takeo Minamikawa, Takaaki Koma, 鈴木 昭浩, Kentaro Nagamatsu, Takeshi Yasui, Koji Yasutomo and Masako Nomaguchi :
深紫外LEDを用いた新型コロナウイルスの不活化,
O plus E, Vol.43, No.2, 137-142, Mar. 2021.
(CiNii: 1521699231001747584)
5. Kentaro Nagamatsu and Takeshi Yasui :
期待される殺菌用・深紫外LED,
特別WEBコラム 新型コロナウィルス禍に学ぶ応用物理, Oct. 2020.
6. Kentaro Nagamatsu and 平山 秀樹 :
深紫外LEDの需要と要素技術,
OPTRONICS, Vol.9, No.465, 88-91, Sep. 2020.
(CiNii: 1522262180861343616)

Proceeding of International Conference:

1. Kouki Fujii, Atsushi Tomita, Yuuto Matsubara, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Investigation of Ga Localization in AlGaN Growth with Step-Bunching at ultra-high temperature MOVPE growth,
The 14th International Conference on Nitride Semiconductors (ICNS-14), Vol.MoP-GR-LN1, Fukuoka, Nov. 2023.
2. Atsushi Tomita, Kouki Fujii, Takuya Kawakami, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
AlGaN and AlGaN/AlN superlattice growth by using ultra high-temperature MOVPE,
The 14th International Conference on Nitride Semiconductors (ICNS-14), Vol.MoP-GR-13, Fukuoka, Nov. 2023.
3. Atsushi Tomita, Kouki Fujii, Takuya Kawakami, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
GaN localization in high-temperature AlGaN growth over 1500,
The 14th International Conference on Nitride Semiconductors (ICNS-14), Vol.MoP-GR-7, Fukuoka, Nov. 2023.
4. Yuusuke Takashima, Shunsuke Furuta, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Deep ultraviolet to visible absorbing and sensing applications by stacking film with highly lossy ultrathin film,
The 13th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2023), Vol.2A29, Paris, Jul. 2023.
5. Kentaro Nagamatsu :
High-temperature growth in AlN by MOVPE,
ISPlasma2023, Gifu, Mar. 2023.
6. Atsushi Tomita, Shota Tsuda, Takumi Miyagawa, Hirayama Hideki, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrate,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
7. Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
8. Takumi Miyagawa, Atsushi Tomita, Shota Tsuda, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
9. Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima and Yoshiki Naoi :
The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE,
International Workshop on Nitride semiconductor 2022, Berlin, Oct. 2022.
10. Kentaro Nagamatsu :
Virus inactivation using ultraviolet LEDs,
CLEO-PR 2022, Sapporo, Aug. 2022.
(DOI: 10.1364/CLEOPR.2022.CTuW1_03,   Elsevier: Scopus)
11. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Ultraviolet violet applications utilizing high refractive index subwavelength structure with ultra-thin thickness,
The 12th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2022), 1A8, Online, Jul. 2022.
12. Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
The improvement of crystal orientation in AlN with controlled inversion domain,
Photonics West 2022, 12001-67, San Francisco, Jan. 2022.
13. Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
Threshold temperature in annihilation radius of dislocation for AlN,
Photonics West 2022, 12001-66, San Francisco, Jan. 2022.
14. Kentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, Reiya Aono, Hideki Hirayama, Yuusuke Takashima and Yoshiki Naoi :
The reduction of adduct formation during high-temperature growth in AlN by jet gas stream metalorganic vapor phase epitaxy,
Photonics West 2022, 12001-6, San Francisco, Jan. 2022.
15. Yuusuke Takashima, Sasada Atsuki, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength,
The 8th Optical Manipulation and Structured Materials Conference, OMC-P-02, Online, Apr. 2021.
(DOI: 10.1117/12.2616175,   Elsevier: Scopus)
16. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
High refractive index contrast meta-structures for GaN-based and sensing applications operating at deep ultraviolet to visible wavelength,
13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 08pD07O, Online, Mar. 2021.
17. Eiji Hase, Takeshi Yasui, Hirayama Hideki and Kentaro Nagamatsu :
The improving resolution for dislocation analysis in GaN by three-photon microscopy,
Photonics West 2020: OPTO2020, San Francisco, Feb. 2020.
18. L. Yates, S. Usami, Kentaro Nagamatsu, G. Pavlidis, Y. Honda, H. Amano and S. Graham :
Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes,
International Workshop on Nitride Semiconductors (IWN2018), Kanazawa, Nov. 2018.
19. Kentaro Nagamatsu, Uesugi K, K. Shojiki, H. Yoshida and H. Miyake :
Improved emission intensity of UVC-LEDs using strain-relaxation layer,
International Workshop on Nitride Semiconductors (IWN2018), Kanazawa, Nov. 2018.
20. K. Uesugi, Y. Hayashi, K. Shojiki, Kentaro Nagamatsu, H. Yoshida and H. Miyake :
Crystalline quality improvement and suppression of cracking for sputter-deposited high-temperature annealed AlN films by stress control,
International Workshop on Nitride Semiconductors (IWN2018), Kanazawa, Nov. 2018.
21. Kentaro Nagamatsu, Kenjiro Uesugi, Kanako Shojiki, Liu Xiaotong, Shiyu Xiao, Yusuke Hayashi, Harumasa Yoshida and Hideto Miyake :
Effect of stress-relaxation layer in UVC-LEDs on sputter-deposited high-temperature annealedAlN/sapphire,
国際照明学会 第十五届中国国际半导体照明论坛, 中国深セン, Oct. 2018.
22. Y. Ando, Kentaro Nagamatsu, A. Tanaka, M. Deki, O.1. Barry, S. Usami, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Schottky Barrier Diodes Fabricated on Miscut m-planeSubstrates,
International Symposium on Growth of -Nitrides (ISGN-7), Warsaw, Aug. 2018.
23. M. Deki, K. Sone, K. Watanabe, F. Miura, Kentaro Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Improvement of Electrical Stability of ALD-Al2O3/GaN Interfaceby UV/O3 Oxidation and Postdeposition Annealing,
International Symposium on Growth of III-Nitrides (ISGN-7), Warsaw, Aug. 2018.
24. A. Tanaka, Kentaro Nagamatsu, S. Usami, M. Kushimoto, M. Deki, S. Nitta, Y. Honda and H. Amano :
Observation of Dislocation Propagation in GaN on GaN Structure With a Multiphoton Excitation Photoluminescence Microscope(invited),
International Symposium on Growth of III-Nitrides (ISGN-7), Warsaw, Aug. 2018.
25. M. Deki, Kentaro Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Improvement of Electrical Stability in ALD-Al2O3/GaN Interface using UV/Ozone Oxidation and Post Deposition Annealing,
International Symposium on Growth of III-Nitrides (ISGN-7), Warsaw, Aug. 2018.
26. K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, Kentaro Nagamatsu, H. Yoshida and H. Miyake :
Crystal quality improvement of sputter-deposited AlN films on SiC substrates by high temperature annealing,
International Symposium on Growth of III-Nitrides (ISGN-7), Warsaw, Aug. 2018.
27. Z. Liu, S. Nitta, S. Usami, Kentaro Nagamatsu, Y. Robin, M. Kushimoto, M. Deki, Y. Honda and H. Amano :
Effect of the environment temperature around the wafer on InGaN grown by metalorganic vapor phase epitaxy,
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Jun. 2018.
28. Z. Ye, S. Nitta, Kentaro Nagamatsu, N. Fujimoto, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek and H. Amano :
Ammonia Decomposition and Reaction by High-Resolution Mass Spectrometry forGroup III-Nitrides Epitaxial Growth,
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Jun. 2018.
29. S. Nitta, Kentaro Nagamatsu, Z. Ye, H. Nagao, S. Miki, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek and H. Amano :
Direct observation of ammonia decomposition and interaction with trimethylgallium in ametalorganic vapor phase epitaxy reactor,
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Jun. 2018.
30. L. Yates, G. Pavlidis, S. Graham, S. Usami, Kentaro Nagamatsu, Y. Honda and H. Amano :
Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes,
2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Vol.978-1-5386-1272-9, Mar. 2018.
(DOI: 10.1109/ITHERM.2018.8419481v)
31. M. Ogura, Y. Ando, S. Usami, Kentaro Nagamatsu, Kushimoto M, M. Deki, A. Tanaka, S. Nitta, Y. Honda, Pristovsek M, H. Kawai, S. Yagi and H. Amano :
Development of sustainable smart society based on transformative electronics,
2017 IEEE International Electron Devices Meeting, Vol.30, No.1, 1-4, Dec. 2017.
(DOI: 10.1109/IEDM.2017.8268477,   Elsevier: Scopus)
32. S. Nitta, Z. Liu, S. Usami, Kentaro Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek and H. Amano :
In-situ and biased characterization of nitride semiconductor crystalfor the advanced optical and power electronic devices,
8th International Conference and Exhibition on Lasers, Optics & Photonics, Nov. 2017.
33. X. Yang, S. Nitta, Kentaro Nagamatsu, M. Pristovsek, Y. Liu, Y. Honda and H. Amano :
Growth and Structural Characterization of Hexagonal Boron Nitride on Sapphire,
International Workshop on UV Materials and Devices 2017 (IWUMD 2017), Fukuoka, Nov. 2017.
34. Y. Honda, A. Tanaka, S. Usami, Kentaro Nagamatsu, S. Nitta and H. Amano :
Dislocation observation of GaN/GaN homo epitaxial growth film by Multi-photon absorption hotoluminescence,
6th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2017), Como, Sep. 2017.
35. M. Deki, Y. Ando, Kentaro Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Deep Levels in Homoepitaxialm-plane GaN Schottky Barrier Diodes,
10th International Workshop on Bulk Nitride Semiconductors IWBNS-X, Finland, Sep. 2017.
36. X. Yang, S. Nitta, Kentaro Nagamatsu, Y. H. Liu, Y. Honda and H. Amano :
Hexagonal boron nitride deposition and growth evolution by pulsed-mode MOVPE technique,
International Conference on Nitride Semiconductors-12, Strasbourg, Jul. 2017.
37. A. Tanaka, O. 1Barry, Kentaro Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off-angled GaN substrate,
International Conference on Nitride Semiconductors-12, Strasbourg, Jul. 2017.
38. M. Deki, K. Sone, J. Matsushita, Kentaro Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors,
International Conference on Nitride Semiconductors-12, Strasbourg, Jul. 2017.
39. S. Usami, Y. Ando, A. Tanaka, Kentaro Nagamatsu, M. Kushimoto, M. Deki, S. Nitta, Y. Honda and H. Amano :
Correlation between dislocations and leakage current of p-n diodes on free-standing GaN substrate,
International Conference on Nitride Semiconductors-12 (ICNS12), Strasbourg, Jul. 2017.
40. X. Yang, S. Nitta, Kentaro Nagamatsu, M. Pristovsek, Y. Liu, Y. Honda and H. Amano :
Impact of temperature on pulsed-mode MOCVDHexagonal Boron Nitride on Sapphire,
SPIE Photonic West, San Francisco, Jan. 2017.
41. S. Usami, R. Miyagoshi, Kentaro Nagamatsu, A. Tanaka, S. Nitta, M. Deki, Y. Honda and H. Amano :
Effect of dislocations on the growth of p-type GaN and device characteristics,
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orlando, Oct. 2016.
42. Z. Sun, A. Ohta, S. Miyazaki, X. Yang, P. Song, Kentaro Nagamatsu, S. Nitta, Y. Honda and H. Amano :
GaN Growth on m-plane SiC Substrate with an Ultrathin Interlayer,
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orlando, Oct. 2016.
43. X. Yang, S. Nitta, Kentaro Nagamatsu, Y. H. Liu, Z. Sun, Z. Ye, J. Matsushita, Y. Honda and H. Amano :
The Influence of Residual Boron in Reactor on the Quality of GaN Crystal Grown via MOVPE,
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orlando, Oct. 2016.
44. S. Nitta, Kentaro Nagamatsu, R. Miyagoshi, Z. Ye, Y. Honda and H. Amano :
In-LineNH3 Reactant Analysis on Nitride Semiconductor Metalorganic Vapor Phase Epitaxy via High-ResolutionMass Spectrometry,
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orlando, Oct. 2016.
45. A. Tanaka, O. 1 Barry, Kentaro Nagamatsu, J. Matsushita, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano :
Facet Distribution of Leakage Current and Carrier Concentration in m-plane GaN Schottky BarrierDiode Fabricated with MOVPE,
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orlando, Oct. 2016.
46. T. Yamamoto, A. Tamura, Kentaro Nagamatsu, M. Deki, S. Nitta, Y. Honda and H. Amamo :
InGaN surface roughness recovery by hydrogen treatment as monitored by in situ laser scattering,
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Aug. 2016.
47. Z. Sun, Kentaro Nagamatsu, M. Deki, S. Nitta, Y. Honda and H. Amano :
GaN Growth on a-plane SiC Substrate with an Ultrathin Interlayer,
he 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Aug. 2016.
48. O. 1 Barry, A. Tanaka, Kentaro Nagamatsu, S.Y. Bae, K. Lekhal, M. Deki, S. Nitta, Y. Honda and H. Amano :
Reduction of leakage current density in homoepitaxial m-plane GaN by controlling V/III ratios for high-power device applications,
the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Aug. 2016.
49. Y. Honda, T. Yamamoto, A. Tamura, S. Usami, Kentaro Nagamatsu, M. Kushimoto, S. Nitta and H. Amano :
In-situ monitoring of Laser absorption and scattering method during InGaN growthby MOVPE,
The 7th International Symposium on Advanced Science and Technology of Silicon Materials, Hawaii, 2016.
50. T. Yamamoto, A. Tamura, S. Usami, Kentaro Nagamatsu, S. Nitta, Y. Honda and H. Amano :
Growth of InGaN well layer with an in-situ monitoring system,
6th International Symposium on Growth of III-Nitrides (ISGN-6), Hamamatsu, Nov. 2015.
51. Z. Ye, Z. Sun, Kentaro Nagamatsu, M. Deki, S. Nitta, Y. Honda and H. Amano :
Reduction of Residual Carbon on Un-doped GaNGrown usingMetal Organic Hydrogen Chloride Vapor Phase Epitaxy,
6th International Symposium on Growth of III-Nitrides (ISGN-6), Hamamatsu, Nov. 2015.
52. M. Kawaguchi, O. Imafuji, Kentaro Nagamatsu, K. Yamanaka and T. Katayama :
Design and Lasing Characteristics of GaN Vertical Elongated Cavity Surface Emitting Lasers,
SPIE Gallium Nitride Materials and Devices IX, Mar. 2014.
53. M. Kawaguchi, O. Imafuji, Kentaro Nagamatsu, K. Yamanaka, S. Takigawa and T. Katayama :
Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,
Proceedings of SPIE, Vol.8986, 8986K, Mar. 2014.
(DOI: 10.1117/12.2037484)
54. T. Onishi, O. Imafuji, Kentaro Nagamatsu, M. Kawaguchi, K. Yamanaka and S. Takigawa :
Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature,
IEEE Journal of Quantum Electronics, Vol.48, No.9, 1107-1112, Jun. 2012.
55. K. Orita, Meneghini M, Ohno H, Trivellin N, N. Ikedo, S. Takigawa, Yuri M, T. Tanaka, E. Zanoni, G. Meneghesso, T. Onishi, O. Imafuji, Kentaro Nagamatsu, Tomoyuki Kawaguchi, K. Yamanaka, Kwon OK, Baek YS, YC. Chung, C. Wang, Grillot F and J. Even :
Dye Lasers Lasing from Water Solution of Rhodamine 6G/Gold Nanoparticles: Impact of SiO2-Coating on Metal Surface. L. Dong,
IEEE Journal of Quantum Electronics, Vol.48, No.9, 1105-1106, Mar. 2012.
56. H. Amano, K. Nagata, D. Iida, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama and I. Akasaki :
Atomic layer epitaxy of GaInN and AlGaN by high pressure MOVPE,
APS March Meeting 2010, Portland, Mar. 2010.
57. H. Amano, K. Nagata, Kentaro Nagamatsu, D. Iida, M. Iwaya, S. Kamiyama and I. Akasaki :
Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN,
Proceedings of SPIE, Vol.7617, Feb. 2010.
(DOI: 10.1117/12.848616)
58. H. Amano, K. Nagata, D. Iida, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama and I. Akasaki :
New MOVPE system for next generation AlGaInN growth,
The 4th International Conference on LED and Solid-State Lighting (LED 2010), Korea, 2010.
59. D. Iida, Kentaro Nagamatsu, K. Nagata, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Growth of GaInN Films by High Pressure MOVPE System at 200kPa,
8th International Conference on Nitride Semiconductors (ICNS-8), 韓国, Oct. 2009.
60. K. Nonaka, T. Asai, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Defects in Highly Mg-Doped AlN,
8th International Conference on Nitride Semiconductors (ICNS-8), 韓国, Oct. 2009.
61. T. Asai, K. Nonaka, K. Ban, K. Nagata, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Growth of Low-Dislocation-Density AlGaN using Mg-Doped AlN Underlying Layer,
8th International Conference on Nitride Semiconductors (ICNS-8), 韓国, Oct. 2009.
62. Kentaro Nagamatsu, D. Iida, K. Takeda, K. Nagata, T. Asai, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
High Pressure MOVPE System with High-Speed Switching Valves for the Realization of High-Quality AlGaN at Low Temperatures,
International Conference on Nitride Semiconductors (ICNS-8), 韓国, Oct. 2009.
63. K. Nagata, T. Ichikawa, K. Takeda, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
High Output Power AlGaN/GaN Ultraviolet Light Emitting Diodes by Activation of Mg-Doped P-Type AlGaN in Oxygen Ambient,
8th International Conference on Nitride Semiconductors (ICNS-8), 韓国, Oct. 2009.
64. Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Takahiro Kasai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki :
Atomic layer epitaxy of AlGaN,
The 36 th International Symposium on Compound Semiconductors, Sep. 2009.
(DOI: 10.1002/pssc.200983862)
65. H. Amano, Kentaro Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama and I. Akasaki :
Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes,
Semiconducting and Insulating Materials Conference (SIMC), リトアニア共和国, Jun. 2009.
66. Kentaro Nagamatsu, K. Takeda, T Mori, H Tsuzuki, M Iwaya, S Kamiyama and I Akasaki :
Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes,
Proceedings of SPIE, Vol.7216, 72161B, Feb. 2009.
(DOI: 10.1117/12.808381)
67. H. Amano, H. Tsuzuki, T. Mori, K. Takeda, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama and I. Akasaki :
Challenge for short wavelength semiconductor UV laser diodes,
SPIE Photonics West, San Jose, Jan. 2009.
68. H. Amano, Kentaro Nagamatsu, K. Takeda, T. Mori, H. Tsuzuki, M. Iwaya, S. Kamiyama and I. Akasaki :
Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes,
Gallium Nitride Materials and Devices IV (SPIE OE106), San Jose, Jan. 2009.
69. Kentaro Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Activation energy of Mg in AlGaN,
International Warkshop on Nitride semiconductor 2008 (IWN2008), Montreux, Switzerland, Oct. 2008.
70. T. Asai, K. Nagata, T. Mori, Kentaro Nagamatsu, N. Okada, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Relaxation process of AlxGa1-xN grown on high-crystalline-quality AlN,
Second International Symposium on Growth of III-Nitrides (ISGN-2), Shizuoka, Jul. 2008.
71. H. Amano, H. Tsuzuki, K. Takeda, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama and I. Akasak :
Short wavelength semiconductor laser diodes,
Japan- Brazil Memorial Symposium on Science and Technology for the Celebration of 100 Years of Japanese Immigration in Brazil, Brazil, Mar. 2008.
72. H. Amano, N. Kato, N. Okada, T. Kawashima, K. Iida, Kentaro Nagamatsu, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama and I. Akasaki :
Nitride-Based UV Lasers,
The 20th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS 2007), Florida, Oct. 2007.
73. H. Amano, Kentaro Nagamatsu, K. Iida, N. Okada, T. Kawashima, M. Iwaya, S. Kamiyama and I. Akasaki :
AlGaN-based UV light emitting devices,
LEOS Annual 2007; 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Florida, Oct. 2007.
74. Kentaro Nagamatsu, Narihito Okada, Naofumi Kato, Takafumi Sumii, Akira Bando, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano and Isamu Akasaki :
Effect of cplane sapphire misorientation on the growth of AlN by hightemperature MOVPE,
The 34th International Symposium on Compound Semiconductors, Oct. 2007.
(DOI: 10.1002/pssc.200779226)
75. K. Iida, F. Mori, H. Watanabe, K. Takeda, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh :
UV Emitters Grown on High Crystalline Quality AlGaN on Sapphire,
The 7th International Conference of Nitride Semiconductors, Las Vegas, Sep. 2007.
76. N. Okada, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani and Y. Yamada :
Stimulated Emission from Nonpolar AlN,
the 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, Sep. 2007.
77. Kentaro Nagamatsu, N. Okada, T. Shyouzo, F. Mori, K. Sugumura, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Epitaxial lateral overgrowth of low dislocation density AlN by high temperature MOVPE and fabrication of UV optoelectronics devices,
The 15th International Conference on Crystal Growth, Salt Lake City, Aug. 2007.
78. K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, Kentaro Nagamatsu, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Comparison of the simulation and experiments of the nitride-based UV light emitting diodes,
Proceedings of SPIE, Vol.6468, Feb. 2007.
(DOI: 10.1117/12.717174)
79. K. Iida, H. Watanabe, K. Takeda, T. Nagai, Kentaro Nagamatsu, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Comparison of the simulation and experiments of the nitride-based UV-light-emitting diodes,
SPIE Photonic West, San Jose, Jan. 2007.
80. H. Amano, H. Tsuzuki, T. Mori, K. Takeda, Kentaro Nagamatsu, M. Iwaya, S. Kamiyama and I. Akasaki :
Growth of low-dislocation-density AlGaN for the realization of high-performance ultraviolet laser diodes,
The 3rd International Conference on Display and Solid-State Lighting, 2007.
81. H. Amano, N. Kato, N. Okada, T. Kawashima, K. Iida, Kentaro Nagamatsu, M. Imura, K. Balakrishnan, Iwaya M, Kamiyama S, I. Akasaki and A. Bandoh :
Nitride-Based UV Lasers,
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 380-381, 2007.
82. K. Balakrishnan, M. Imura, K. Iida, Kentaro Nagamatsu, H. Sugimura, T. Nagai, T. Sumii, S. Mori, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
High temperature MOVPE growth of AlN and AlxGa1-xN,
4th International Workshop of Nitride Semiconductors, Kyoto, Oct. 2006.
83. K. Balakrishnan, M. Imura, K. Iida, Kentaro Nagamatsu, S. Mori, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
High temperature MOVPE growth of AlN and AlxGa1-xN,
4th International Workshop of Nitride Semiconductors, Kyoto, Oct. 2006.
84. B. Krishnan, M. Imura, K. Iida, Kentaro Nagamatsu, Kunihiko Sugimura, T. Nagai, T. Sumii, F. Mori, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
High Temperature MOVPE Growth of AlxGa1-xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices'' MRS OnlineProceedingsLibrary(OPL),
Materials Research Society Symposia Proceedings, Vol.955, No.I04, 03, 2006.
(DOI: 10.1557/PROC-0955-I04-03)
85. N. Tsuyukuchi, Kentaro Nagamatsu, Yoshinobu Hirose, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using P-Type Gate Contact,
Materials Research Society Symposia Proceedings, Vol.892, 383, 2006.
86. N. Tsuyukuchi, Kentaro Nagamatsu, H. Yoshinobu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact,
Materials Research Society Fall Meeting, Vol.FF15.3, Boston, Nov. 2005.
87. Y. Okadome, Y. Tsuchiya, H. Furukawa, Kentaro Nagamatsu, A. Honshio, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Realization of high-crystallinity a-plane GaN grown on r-plane sapphire substrate for high-performance light-emitting device,
Materials Research Society Fall Meeting, Vol.FF7.7/EE5.7, Boston, Nov. 2005.
88. N. Tsuyukuchi, Kentaro Nagamatsu, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki :
Normally Off-Mode AlGaN/GaN HFET with p-Type Gate Contact,
MRS Online Proceedings Library Archive, Vol.892, No.FF15, 03, 2005.
(DOI: 10.1557/PROC-0892-FF15-03P)

Proceeding of Domestic Conference:

1. FUKUDA Kaito, SUTO Naoya, SEKI Hiroto, KAWAKAMI Takuya, Kentaro Nagamatsu, 高林 圭佑, 小林 洋平, 山口 誠, Yuusuke Takashima, Yoshiki Naoi and Takuro Tomita :
p型窒化ガリウム上金属電極へのピコ秒レーザー照射の影響,
令和6年電気学会全国大会, 2-079, Mar. 2024.
2. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Polarization tunable structural color from Ni-subwavelength grating/SiO2/Ni,
第84回応用物理学会秋季学術講演会, 22p-P04-14, Sep. 2023.
3. Shunsuke Furuta, Kentaro Nagamatsu, Masanobu Haraguchi, Yoshiki Naoi and Yuusuke Takashima :
Visible to near-infrared broadband absorber with multilayer including ultra-thin Fe film by complex Fresnel reflection,
第84回応用物理学会秋季学術講演会, 21a-A309-4, Sep. 2023.
4. Yua Okano, Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Improvement of resonant sharpness in deep ultraviolet region using high aspect ratio AlN subwavelength grating,
2023年度 応用物理・物理系学会 中国四国支部 合同学術講演会, Ep-6, Jul. 2023.
5. Shunsuke Furuta, Kentaro Nagamatsu, Yoshiki Naoi and Yuusuke Takashima :
Narrowing the absorption spectrum of multilayer structure by large complex Fresnel multiple reflection,
2023年度 応用物理・物理系学会 中国四国支部 合同学術講演会, Ep-5, Jul. 2023.
6. 髙柳 祐介, ATSUSHI Tomita, Kohki Fujii, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
窒化処理した高温成長AlNにおける極性反転,
2023年度 応用物理・物理系学会 中国四国支部 合同学術講演会, Jul. 2023.
7. MATSUBARA Yuto, ATSUSHI Tomita, Kohki Fujii, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
高オフ角サファイア基板上AlNのステップバンチング低減技術,
2023年度 応用物理・物理系学会 中国四国支部 合同学術講演会, Jul. 2023.
8. 富田 敦之, 宮川 拓己, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
超高温MOVPEを用いたAlGaN成長,
第70回応用物理学会春季学術講演会, Mar. 2023.
9. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Investigation for high sensitivity refractive index sensing by multilayer containing highly lossy material,
第70回応用物理学会春季学術講演会, 17p-A305-14, Mar. 2023.
10. Masaharu Kato, Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Refractive index sensor by using the combination of high contrast gratings operating at two wavelengths,
レーザー学会学術講演会第43回年次大会, P01-20p-P-19, Jan. 2023.
11. ATSUSHI Tomita, Takumi Miyagawa, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
気相反応抑制下におけるAlN高温成長の最適化のためのV/III比依存性,
第14回ナノ構造エピタキシャル成長講演会, Fr-P19, Nov. 2022.
12. Kentaro Nagamatsu :
有機金属気相成長法による高温AlN成長,
第14回ナノ構造エピタキシャル成長講演会, Fr-I04, Nov. 2022.
13. Atsuki Sasada, Takumi Miyagawa, Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Highly Reflective Reflector with Airgap High-Contrast Subwavelength Grating for Deep Ultraviolet Wavelength,
日本光学会年次学術講演会 Optics & Photonics Japan 2022, Vol.P15, Nov. 2022.
14. Takehiro Nezu, Takumi Miyagawa, Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
Highly sensitive refractive index sensor with double-layer subwavelength gratings operating ultraviolet region,
日本光学会年次学術講演会 Optics & Photonics Japan 2022, Vol.P14, Nov. 2022.
15. 富田 敦之, 津田 翔太, Takumi Miyagawa, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
低オフ角サファイヤ基板を用いた高温AIN成長におけるV/Ⅲ比依存性,
第69回応用物理学会春季学術講演会, 25a-E203-3, Mar. 2022.
16. 宮川 拓己, 津田 翔太, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
高温有機金属気相成長法におけるAlNの特異的なステップバンチング,
第69回応用物理学会春季学術講演会, 25a-E203-2, Mar. 2022.
17. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
高屈折率を有するTiO2極薄膜を用いた深紫外光吸収体,
第69回応用物理学会春季学術講演会, 24a-E303-9, Mar. 2022.
18. Atsushi Tomita, Shota Tsuda, Takumi Miyagawa, Yuusuke Takashima, Yoshiki Naoi, 平山 秀樹 and Kentaro Nagamatsu :
気相反応を制御したMOVPEにおけるAlNのV/III比依存性,
第50回日本結晶成長学会, Oct. 2021.
19. Atsushi Tomita, 津田 翔太, 宮川 拓己, Yuusuke Takashima, Yoshiki Naoi, 平山 秀樹 and Kentaro Nagamatsu :
気相反応を抑制したMOVPEにおけるAlNのV/Ⅲ比依存性,
第50回結晶成長国内会議(JCCG-50), 27p-A12, Oct. 2021.
20. Yuusuke Takashima, Atsuki Sasada, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
AlNサブ波長回折格子を用いた深紫外ミラーの広帯域化,
第82回応用物理学会秋季学術講演会, 13a-N324-3, Sep. 2021.
21. 津田 翔太, 宮川 拓己, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
インバージョンドメインの抑制による高品質AlN成長手法の確立,
第82回応用物理学会秋季学術講演会, 13p-N101-10, Sep. 2021.
22. Shota Tsuda, Takumi Miyagawa, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
極性制御による高品質AlN成長手法の確立,
応用物理学会中四国支部若手研究会, Aug. 2021.
23. Atsushi Tomita, Shota Tsuda, Reiya Aono, Takumi Miyagawa, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
気相反応を抑制した高温MOVPEにおけるV/III比依存性,
応用物理学会中四国支部若手研究会, Aug. 2021.
24. Takeo Minamikawa, Takaaki Koma, 鈴木 昭浩, Kentaro Nagamatsu, Takeshi Yasui, Koji Yasutomo and Masako Nomaguchi :
深紫外LEDを用いた新型コロナウイルスの不活化,
電気学会 光・量子デバイス研究会「パワー光源システム技術研究会」, Jul. 2021.
25. 宮川 拓己, 津田 翔太, 青野 零弥, 揚田 侑哉, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
AlNの高流速成長における成長メカニズム,
第68回応用物理学会春季学術講演会, 19p-Z27-13, Mar. 2021.
26. 津田 翔太, 青野 零弥, 揚田 侑哉, 宮川 拓己, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
AlNテンプレート上高温AlN結晶成長,
第68回応用物理学会春季学術講演会, 19p-Z27-3, Mar. 2021.
27. Kentaro Nagamatsu, 津田 翔太, 青野 零弥, 宮川 拓己, 揚田 侑哉, 平山 秀樹, Yuusuke Takashima and Yoshiki Naoi :
高温有機金属気相成長装法におけるAlN成長の気相反応抑制,
第68回応用物理学会春季学術講演会, 19p-Z27-14, Mar. 2021.
28. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
TiO2メタ周期構造を表面に有するAlGaN系深紫外発光ダイオードのコリメート特性,
第68回応用物理学会春季学術講演会, 19a-Z08-7, Mar. 2021.
29. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
構造高さを変調したTiO2メタ表面による集光紫外発光ダイオードの提案,
日本光学会年次学術講演会Optics & Photonics Japan 2020, 17pC4, Nov. 2020.
30. Reiya Aono, Yuusuke Takashima, Yoshiki Naoi, Takeshi Yasui and Kentaro Nagamatsu :
紫外光LEDの大気中における光減衰に関する研究,
第67回応用物理学会春季学術講演会予稿集, 12p-B409-8, Mar. 2020.
31. Kentaro Nagamatsu and 平山 秀樹 :
AlGaN深紫外LEDの課題と最近の進展,
ポストLEDフォトニクス研究所公開シンポジウム2019, Oct. 2019.
32. 上杉 謙次郎, 林 侑介, 正直 花奈子, Kentaro Nagamatsu and 三宅 秀人 :
講演奨励賞受賞記念講演 深紫外発光素子応用に向けたスパッタ成膜AlNテンプレートの転位密度低減,
第66回応用物理学会春季学術講演会, Mar. 2019.
33. 上杉 謙次郎, 林 侑介, 正直 花奈子, Kentaro Nagamatsu, 吉田 治正 and 三宅 秀人 :
高温アニールしたAlNのクラック抑制と高品質化,
第79回応用物理学会秋季学術講演会, Sep. 2018.
34. Kentaro Nagamatsu, 上杉 謙次郎, 三宅 秀人 and 吉田 治正 :
歪緩和による深紫外LEDの発光効率改善,
第79回応用物理学会秋季学術講演会, Sep. 2018.
35. Kentaro Nagamatsu, 上杉 謙次郎, 正直 花奈子, 吉田 治正 and 三宅 秀人 :
スパッタ法AlN膜の高温アニールとその基板上への AlGaN深紫外LED作製,
第79回応用物理学会秋季学術講演会, Sep. 2018.
36. 田中 敦之, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
多光子 PL 顕微鏡による窒化ガリウム中転位の三次元観察,
日本結晶成長学会ナノ構造・エピタキシャル成長分科会2018年講演会第10回 ナノ構造・エピタキシャル成長講演会, Jul. 2018.
37. 安藤 悠人, Kentaro Nagamatsu, 田中 敦之, 宇佐美 茂佳, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央 and 天野 浩 :
m 面 GaN 基板上 SBD における障壁高さの金属仕事関数依存性,
日本結晶成長学会ナノ構造・エピタキシャル成長分科会2018年講演会第10回 ナノ構造・エピタキシャル成長講演会, Jul. 2018.
38. 上杉 謙次郎, 正直 花奈子, 林 侑介, 肖 世玉, Kentaro Nagamatsu, 吉田 治正 and 三宅 秀人 :
6H-SiC基板上におけるAlN周期構造の作製と評価,
日本結晶成長学会ナノ構造・エピタキシャル成長分科会2018年講演会第10回 ナノ構造・エピタキシャル成長講演会, Jul. 2018.
39. 田中 敦之, 宇佐美 茂佳, 安藤 悠人, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
∼格子欠陥はどこまで制御できるのか:先端評価と機能探索∼,
第65回応用物理学会春季学術講演会, Mar. 2018.
40. 田中 大暉, Kentaro Nagamatsu, 山田 永, 山田 寿一, 熊谷 義直, 新田 州吾, 本田 善央, 清水 三聡 and 天野 浩 :
HVPE法によるAlGaNの薄膜成長,
第65回応用物理学会春季学術講演会, Mar. 2018.
41. 叶 正, 新田 州吾, Kentaro Nagamatsu, 本田 善央 and 天野 浩 :
高分解能質量分析によるⅢ族窒化物半導体気相成長のためのアンモニア分解及び反応の解析,
第65回応用物理学会春季学術講演会, Mar. 2018.
42. 大河内 勇斗, 関口 一樹, 長川 健太, 洗平 昌晃, Kentaro Nagamatsu, 新田 州吾, 本田 善央, 天野 浩 and 白石 賢二 :
h-BN MOVPE中における気相反応プロセスの理論的検討,
第65回応用物理学会春季学術講演会, Mar. 2018.
43. 出来 真斗, 曾根 和詩, Kentaro Nagamatsu, 田中 敦之, 久志本 真希, 新田 州吾, 本田 善央 and 天野 浩 :
GaN表面への酸化プロセスがALD-Al2O3/GaN界面の電 気特性に与える影響,
第65回応用物理学会春季学術講演会, Mar. 2018.
44. 宇佐美 茂佳, 菅原 義弘, 姚 永昭, 石川 由加里, 間山 憲仁, 戸田 一也, 安藤 悠人, 田中 敦之, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
3DAP および LACBED 法による GaN 自立基板上 pn ダ イオードのリークの起源調査,
第65回応用物理学会春季学術講演会, Mar. 2018.
45. 宇佐美 茂佳, 福島 颯太, 安藤 悠人, 田中 敦之, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
GaN 自立基板上 pn ダイオード逆方向リーク電流の成長 条件依存性,
第65回応用物理学会春季学術講演会, Mar. 2018.
46. 安藤 悠人, Kentaro Nagamatsu, 田中 敦之, 宇佐美 茂佳, バリー ウスマン1, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央 and 天野 浩 :
m面GaN基板上SBDにおける障壁高さの金属仕事関数依存性,
第65回応用物理学会春季学術講演会, Mar. 2018.
47. 河野 司, 久志本 真希, Kentaro Nagamatsu, 新田 州吾, 本田 義央 and 天野 浩 :
-C面GaN基板上のGaNのMOVPE成長における酸素低減の研究,
電子情報通信学会 名古屋工業大学, Nov. 2017.
48. Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda and Hiroshi Amano :
In-situ gas monitoring in metalorganic vapor phase epitaxy reactor during GaN growth bymulti-turn Time-of-flight mass spectrometry,
第 15 回 赤﨑記念研究センターシンポジウム「窒化物半導体研究の新展開:新規デバイスの創出をめざして」, Nov. 2017.
49. 安藤 悠人, Kentaro Nagamatsu, 田中 敦之, 宇佐美 茂佳, バリー ウスマン1, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央 and 天野 浩 :
オフ角の異なるm 面GaN 基板上Si ドープ厚膜SBD,
第78回応用物理学会秋季学術講演会, Sep. 2017.
50. 宇佐美 茂佳, 福島 颯太, 安藤 悠人, 田中 敦之, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
転位密度の異なるGaN自立基板上PNダイオードのキラー転位解析,
第78回応用物理学会秋季学術講演会, Sep. 2017.
51. 白石 賢二, 関口 一樹, 長川 健太, 白川 裕規, 川上 賢人, 山本 芳裕, 洗平 昌晃, Kentaro Nagamatsu, 新田 州吾, 岡本 直也, 芳松 克則, 寒川 義裕, 柿本 浩一 and 天野 浩 :
エピタキシャル成長のマルチフィジックスシミュレーションの現状,
第64回応用物理学会春季学術講演会, Mar. 2017.
52. 田中 敦之, バリー 1 オースマネー, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
m面GaN SBDの漏れ電流のファセット依存性,
第64回応用物理学会春季学術講演会, Mar. 2017.
53. 曾根 和詩, 松下 淳矢, 安藤 悠人, Kentaro Nagamatsu, 田中 敦之, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
O2プラズマ処理 および O3酸化 処理 を行った Al 2O3/GaN /GaN 構造の界面準位密度評価,
第64回応用物理学会春季学術講演会, Mar. 2017.
54. 宇佐美 茂佳, 安藤 悠人, 田中 敦之, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
GaN自立基板上PNダイオードの逆方向リークと転位の関係,
第64回応用物理学会春季学術講演会, Mar. 2017.
55. 叶 正, Kentaro Nagamatsu, 新田 州吾, 本田 善央 and 天野 浩 :
MOHVPE法における中間反応,
第64回応用物理学会春季学術講演会, Mar. 2017.
56. 安藤 悠人, 小倉 昌也, 松下 淳矢, 宇佐美 茂佳, 田中 敦之, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
2次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製,
第64回応用物理学会春季学術講演会, Mar. 2017.
57. 宇佐美 茂佳, 安藤 悠人, 田中 敦之, Kentaro Nagamatsu, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
GaN 自立基板上PIN ダイオードにおける順方向発光パターン解析,
第77回応用物理学会秋季学術講演会, Sep. 2016.
58. 宮越 亮輔, 劉 志彬, 山本 哲也, Kentaro Nagamatsu, 新田 州吾, 本田 善央 and 天野 浩 :
レーザ散乱光強度その場観察によるInGaN 成長モードの解析,
第77回応用物理学会秋季学術講演会, Sep. 2016.
59. 松下 淳矢, Kentaro Nagamatsu, Yang Xu, 田中 敦之, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央 and 天野 浩 :
窒化ホウ素を用いたGaN -MIS キャパシタの 作製 と電気特性評価,
第77回応用物理学会秋季学術講演会, Sep. 2016.
60. 山本 哲也, 田村 彰, Kentaro Nagamatsu, 新田 州吾, 本田 善央 and 天野 浩 :
レーザ散乱を用いたInGaN結晶成長表面粗さ回復の観察,
第63回応用物理学会春季学術講演会, Mar. 2016.
61. 川口 真生, 今藤 修, Kentaro Nagamatsu, 山中 一彦, 瀧川 信一 and 片山 琢磨 :
長共振器型窒化物系面発光レーザの設計と発振特性,
第76回応用物理学会秋季学術講演会, Sep. 2015.
62. 永田 賢昌, 飯田 大輔, Kentaro Nagamatsu, 竹田 健一郎, 松原 哲也, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
GaInNの加圧MOVPEにおける熱力学解析,
電子情報通信学会徳島大学, Nov. 2009.
63. 永田 賢吾, 市川 友紀, 竹田 健一郎, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
酸素雰囲気中での活性化アニールによる紫外発光素子の高効率化,
電子情報通信学会徳島大学, Nov. 2009.
64. 永田 賢吾, 竹田 健一郎, 市川 友紀, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
酸素雰囲気中でのp 型AlGaN の活性化による高出力AlGaN/GaN 紫外LED,
第70回応用物理学会学術講演会, Sep. 2009.
65. 野中 健太朗, 浅井 俊晶, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
Mg-doped AlN下地層を用いた低転位AlGaNの微細構造観察,
第70回応用物理学会学術講演会, Sep. 2009.
66. 浅井 俊晶, 野中 健太朗, 伴 和仁, 永田 賢昌, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
Mg-doped AlN下地層によるAlGaNの低転位化の機構,
第70回応用物理学会学術講演会, Sep. 2009.
67. Kentaro Nagamatsu, 竹田 健一郎, 飯田 大輔, 永田 賢昌, 浅井 俊晶, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
AlGaNの原子層エピタキシャル成長,
第70回応用物理学会学術講演会, Sep. 2009.
68. 永田 賢昌, 飯田 大輔, Kentaro Nagamatsu, 松原 哲也, 竹田 健一郎, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
高圧MOVPE法を用いたGaInN成長,
第70回応用物理学会学術講演会, Sep. 2009.
69. 永田 賢昌, 飯田 大輔, Kentaro Nagamatsu, 松原 哲也, 竹田 健一郎, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
加圧MOVPEによる高速バルブスイッチング技術を用いたAlGaNの高品質化,
第70回応用物理学会学術講演会, Sep. 2009.
70. Kentaro Nagamatsu, 浅井 俊晶, 竹田 健一郎, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
AlGaN中のMgの活性化エネルギー(II),
第56回応用物理学関係連合講演会, Mar. 2009.
71. 永田 賢吾, 竹田 健一郎, Kentaro Nagamatsu, 都築 宏俊, 岩谷 素顕, 上山 智, 天野 浩 and 赤崎 勇 :
活性化アニールによるp型Al0.17Ga0.83Nの正孔濃度と接触比抵抗の評価,
第56回応用物理学関係連合講演会, Mar. 2009.
72. 福井 一俊, 伊藤 智治, 鈴木 将孝, 岸田 正明, Kentaro Nagamatsu, 天野 浩 and 平山 秀樹 :
AlN のバンド構造と偏光特性,
第69回応用物理学会学術講演会, Sep. 2008.
73. 鈴木 将孝, 澤井 駿, 福井 一俊, Kentaro Nagamatsu and 天野 浩 :
Mg-doped p-AlGaN混晶の発光スペクトルの温度依存性,
第69回応用物理学会学術講演会, Sep. 2008.
74. 福井 一俊, 伊藤 智治, 鈴木 将孝, 岸田 正明, Kentaro Nagamatsu, 天野 浩 and 平山 秀樹 :
AlN のバンド構造と偏光特性,
第69回応用物理学会学術講演会, Sep. 2008.
75. 鈴木 将孝, 澤井 駿, 福井 一俊, Kentaro Nagamatsu and 天野 浩 :
Mg-doped p-AlGaN混晶の発光スペクトルの温度依存性,
第69回応用物理学会学術講演会, Sep. 2008.
76. 竹田 健一郎, 森 史明, 小木曽 裕二, 森 俊晶, 浅井 俊晶, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
周期溝下地結晶を用いたAl0.5Ga0.5Nの低転位化,
第69回応用物理学会学術講演会, Sep. 2008.
77. 森 俊晶, 浅井 俊晶, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
溝加工したAlN上AlGaNの転位解析,
電子情報通信学会 名古屋工業大学, May 2008.
78. Kentaro Nagamatsu, 岡田 成仁, 井村 将隆, 岩谷 素顕, 上山 智, 天野 浩 and 赤﨑 勇 :
AlGaN中のMgの活性化エネルギー,
第55回応用物理学関係連合講演会, Mar. 2008.
79. 天野 浩, Kentaro Nagamatsu, 飯田 大輔, 竹田 健一郎, 都築 宏俊, 早川 武雅, 岩谷 素顕, 上山 智 and 赤﨑 勇 :
シミュレータを用いた窒化物半導体光デバイスの動作シミュレーションおよび実際との比較,
日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会2008, 2008.
80. 天野 浩, Kentaro Nagamatsu, 飯田 大輔, 竹田 健一郎, 都築 宏俊, 早川 武雅, 岩谷 素顕, 上山 智 and 赤﨑 勇 :
シミュレータを用いた窒化物半導体光デバイスの動作シミュレーションおよび実際との比較,
日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会2008, 2008.
81. 飯田 一喜, 渡邉 浩嵩, 竹田 健一郎, 住井 隆文, 永井 哲也, Kentaro Nagamatsu, 岡田 成仁, クリシュナン バラクリシュナン, 岩谷 素顕, 上山 智, 天野 浩, 赤﨑 勇 and 坂東 章 :
低転位化によるAlGaN系紫外発光素子の高効率化(III),
第54回応用物理学関係連合講演会, Mar. 2007.
82. 飯田 一喜, 渡邉 浩嵩, 竹田 健一郎, 住井 隆文, 永井 哲也, Kentaro Nagamatsu, 岡田 成仁, バラクリシュナン クリシュナン, 岩谷 素顕, 上山 智, 天野 浩, 赤﨑 勇 and 坂東 章 :
低転位化によるAlGaN系紫外発光素子の高効率化(III),
電子情報通信学会京都大学, Oct. 2006.
83. 三島 俊介, Kentaro Nagamatsu, 本塩 彰, 三宅 泰人, 浅井 利浩, 飯田 一喜, 川島 毅, 岩谷 素顕, 上山 智, 天野 浩 and 赤崎 勇 :
顕微ラマン分光法によるNitride-LEDの動作時におけるGaN層の温度分布解析,
第66回応用物理学会学術講演会, Sep. 2005.
84. Kentaro Nagamatsu, 岡留 由真, 古川 寛子, 土屋 陽祐, 浅井 利浩, 三島 俊介, 本塩 彰, 岩谷 素顕, 上山 智, 天野 浩 and 赤崎 勇 :
サファイアR面基板上ナイトライドLEDの特性,
第66回応用物理学会学術講演会, Sep. 2005.

Et cetera, Workshop:

1. 藤井 滉樹, Takumi Miyagawa, ATSUSHI Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
X線回折を用いたステップバンチングの発生オフ角評価,
応用物理学会中四国支部・若手半導体研究会, Aug. 2022.
2. Masaki Fujita, Takumi Miyagawa, ATSUSHI Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
MOVPE 超高温 成長中断 アニーリングによる A lN 転位低減手法,
応用物理学会中四国支部・若手半導体研究会, Aug. 2022.
3. Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
高屈折率ナノ構造による深紫外∼可視域での発光およびセンシングデバイス,
第173回ラドテック研究会講演会, 2, Nov. 2021.
4. Atsushi Tomita, 津田 翔太, 青野 零弥, 宮川 拓己, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
気相反応を抑制した高温MOVPEにおけるV/Ⅲ比依存性,
2021年度応用物理学会中国四国支部若手半導体研究会, 1-11, Aug. 2021.
5. 津田 翔太, 宮川 拓己, Atsushi Tomita, 平山 秀樹, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
極性制御による高品質AlN成長手法の確立,
2021年度応用物理学会中国四国支部若手半導体研究会, 1-12, Aug. 2021.
6. 揚田 侑哉, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
AlN高温成長での面内膜厚分布の改善,
LED総合フォーラム2021in徳島, P-17, Feb. 2021.
7. 杉本 健太, Yuusuke Takashima, Kentaro Nagamatsu, Masanobu Haraguchi and Yoshiki Naoi :
サブ波長周期電極を有する紫外発光ダイオード偏光特性に対する電極材料の影響,
LED総合フォーラム2021in徳島, P-10, Feb. 2021.
8. Reiya Aono, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
深紫外LEDの大気中における光減衰に関する研究,
LED総合フォーラム2020in徳島, P-16, Feb. 2020.
9. 村上 堅也, Yoshiki Naoi, Yuusuke Takashima and Kentaro Nagamatsu :
深紫外LEDの発光層温度予測と寿命の関係,
徳島大学ポストLEDフォトニクス公開シンポジウム2019, P-20, Oct. 2019.
10. 青野 零弥, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu :
次世代癌治療用深紫外スポットLEDの開発,
徳島大学ポストLEDフォトニクス公開シンポジウム2019, P-19, Oct. 2019.
11. 津田 翔太, Yoshiki Naoi, Yuusuke Takashima and Kentaro Nagamatsu :
次世代殺菌浄水システム,
徳島大学ポストLEDフォトニクス公開シンポジウム2019, P-18, Oct. 2019.
12. 河野 司, 久志本 真希, Kentaro Nagamatsu, 新田 州吾, 本田 善央 and 天野 浩 :
-c 面 GaN 基板上の GaN の MOVPE 成長における酸素低減の研究 (電子デバイス),
IEICE Technical Report, Vol.117, No.331, 19-22, Nov. 2017.
13. Kentaro Nagamatsu :
3族窒化物半導体紫外発光素子の高効率化のための要素技術に関する研究,
CiNii 国立情報学研究所 学術情報ナビゲータ, Mar. 2010.
14. 永田 賢吾, 市川 友紀, 竹田 健一郎, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤崎 勇 :
酸素雰囲気中での活性化アニールによる紫外発光素子の高効率化,
IEICE Technical Report, Vol.109, No.289, 75-80, Nov. 2009.
15. 永田 賢昌, 飯田 大輔, Kentaro Nagamatsu, 竹田 健一郎, 松原 哲也, 岩谷 素顕, 上山 智, 天野 浩 and 赤崎 勇 :
GaInN の加圧 MOVPE における熱力学解析,
IEICE Technical Report, Vol.109, No.288, 55-58, Nov. 2009.
16. 森 俊晶, 浅井 俊晶, Kentaro Nagamatsu, 岩谷 素顕, 上山 智, 天野 浩 and 赤崎 勇 :
溝加工した AlN 上 AlGaN の転位解析,
IEICE Technical Report, Vol.108, No.36, 57-60, May 2008.
17. 渡邉 浩崇, 飯田 一喜, 竹田 健一郎, Kentaro Nagamatsu, 住井 隆文, 永井 哲也, バラクリッシュナン クリッシュナン, 岩谷 素顕, 上山 智, 天野 浩, 赤崎 勇 and 坂東 章 :
様々な基板上への紫外発光素子の作製と評価,
IEICE Technical Report, Vol.106, No.269, 87-92, Oct. 2006.

Patent:

1. Shugo Nitta, Yoshio Honda, Kentaro Nagamatsu, Hiroshi Amano and Naoki Fujimoto : VAPOR PHASE EPITAXIAL GROWTH DEVICE, PCT I JP2018/033324 (Mar. 2020).
2. Kentaro Nagamatsu, 吉田 治正 and 三宅 秀人 : 半導体基板および半導体基板の製造方法, 2018-155448 (Aug. 2018), 2020-29383 (Feb. 2020), .
3. 新田 州吾, Kentaro Nagamatsu, 天野 浩, 三木 伸一 and 長尾 博文 : 気相成長装置, 2017-241860 (Dec. 2017), 2019-110197 (Jul. 2019), .
4. 新田 州吾, 本田 善央, Kentaro Nagamatsu, 天野 浩 and 藤本 直樹 : 気相成長装置, 2017-183987 (Sep. 2017), 2019-059636 (Apr. 2019), .

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)