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名誉教授 : 酒井 士郎 |
| ○ | 半導体工学 (Semiconductor Physical Electronics) |
| ○ | 窒化物半導体の研究 (窒化ガリウム (gallium nitride), 半導体デバイス (semiconductor devices)) |
| 1. | 酒井 士郎, 他 : 化合物半導体の最新技術 大全集, 株式会社 技術情報協会, 東京, 2007年4月. |
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| 2. | Shiro Sakai, Kiyoshi Takahash and al. et : Wide Bandgap Semiconductors, Nippon Gakujyutsu-shinnkoukai, Feb. 2007. |
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| 3. | 酒井 士郎, 高橋 清, 他 : ワイドギャップ半導体光・電子デバイス, 森北出版 株式会社, 東京, 2006年2月. |
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| 4. | 酒井 士郎 : 映像情報メデアハンドブック, 2000年1月. |
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| 5. | 酒井 士郎 : III 族窒化物半導体，赤崎編著, 倍風館, 1999年1月. |
| 1. | Dohyung Kim, Yuya Onishi, Ryuji Oki and Shiro Sakai : Photo-induced Current and Degradation in Al4C3/Al2O3 (0001) Grown by Metalorganic Chemical Vapor Deposition, Thin Solid Films, Vol.557, 216-221, 2014. (DOI: 10.1016/j.tsf.2014.01.021, Elsevier: Scopus) |
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| 2. | Dohyung Kim, Heesub Lee, Kazuya Yamazumi, Yoshiki Naoi and Shiro Sakai : Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al4C3, Japanese Journal of Applied Physics, Vol.52, No.8S, 08JG18-1-08JG18-5, 2013. (DOI: 10.7567/JJAP.52.08JG18, CiNii: 1520009408993458176) |
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| 3. | Tianya Tan, Mitsuaki Tohno, Masakazu Matsumoto, Yoshiki Naoi and Shiro Sakai : Electroluminescence orientation in InGaN/GaN LED on nano-patterned sapphire by MOCVD, Journal of Wuhan University of Technology. Materials Science Edition, Vol.27, No.6, 1137-1138, 2012. (DOI: 10.1007/s11595-012-0617-x, Elsevier: Scopus) |
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| 4. | Yoshiki Naoi, Masakazu Matsumot, Tianya Tan, Mitsuaki Tohno, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : GaN-based light emitting diodes with periodic nano-structures on the surface fabricated by nanoimprint lithography technique, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2154-2156, 2010. (DOI: 10.1002/pssc.200983486) |
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| 5. | Yuji Nariyuki, Masakazu Matsumot, Takeshi Noda, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 2121-2123, 2010. (DOI: 10.1002/pssc.200983481) |
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| 6. | Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : GaN surface nanostructure photodetector based on back side incidence, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.7, No.7-8, 1804-1806, 2010. (DOI: 10.1002/pssc.200983506) |
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| 7. | Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : Fabrication and Photovoltaic Measurements of Surface Nanostructure of AlGaInN-Based Photodetector, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.48, No.11, 111001-1-111001-5, 2009. (DOI: 10.1143/JJAP.48.111001, CiNii: 1520572358500484736) |
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| 8. | Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Journal of Crystal Growth, Vol.311, No.10, 2847-2849, 2009. (DOI: 10.1016/j.jcrysgro.2009.01.027) |
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| 9. | T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.5, No.9, 3066-3068, 2008. (DOI: 10.1002/pssc.200779205) |
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| 10. | Yoshiki Naoi, K. Ikeda, T. Hama, K. Ono, R. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, S. M. Lee and M. Koike : Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2810-2813, 2007. (DOI: 10.1002/pssc.200674826, Elsevier: Scopus) |
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| 11. | M Yamamoto, Y Hamazaki, M Tsukihara, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.46, No.14, L323-L325, 2007. (DOI: 10.1143/JJAP.46.L323, CiNii: 1360847871783684096) |
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| 12. | M Tsukihara, K Sumiyoshi, T Okimoto, K Kataoka, S Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.300, No.1, 190-193, 2007. (DOI: 10.1016/j.jcrysgro.2006.11.011) |
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| 13. | K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Vol.46, No.2, 491-495, 2007. (DOI: 10.1143/JJAP.46.491, CiNii: 1520572357679538176) |
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| 14. | Kazuhide Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Shuichi Kawamichi, Tadashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N film with Middle Temperature Intermediate Layer Grown on Trenched Sapphire Substrate by MOCVD, Journal of Crystal Growth, Vol.298, No.SI, 300-304, 2007. (DOI: 10.1016/j.jcrysgro.2006.10.031) |
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| 15. | Katsushi Nishino, A. Sakamoto and Shiro Sakai : Growth of thich a-plane GaN on r-plane sapphire by direct synthesis method, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.4, No.7, 2532-2535, 2007. (DOI: 10.1002/pssc.200674785) |
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| 16. | Shuichi Kawamichi, Katsushi Nishino, Kazuhide Sumiyoshi, Masashi Tsukihara, Fanwang Yan and Shiro Sakai : Inversion domain in AlGaN films grown on patterned sapphire substrate, Journal of Crystal Growth, Vol.298, 297-299, 2007. (DOI: 10.1016/j.jcrysgro.2006.10.030) |
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| 17. | F.W. Yan, Yoshiki Naoi, M. Tsukihara, S. Kawamichi, T. Yadani, K. Sumiyoshi and Shiro Sakai : Diffusion effect-induced InNAs films growth on GaAs(100) substrates by MOCVD, Physica B : Condensed Matter, Vol.376-377, 595-597, 2006. (DOI: 10.1016/j.physb.2005.12.150) |
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| 18. | Takashi Okimoto, Masashi Tsukihara, Kazuhide Sumiyoshi, Ken Kataoka, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.8, L236-L238, 2006. (DOI: 10.1143/JJAP.45.L236, CiNii: 1360566396806119680) |
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| 19. | Fawang Yan, Yoshiki Naoi, Masashi Tsukihara, Takayuki Yadani and Shiro Sakai : Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition, Journal of Crystal Growth, Vol.282, No.1-2, 29-35, 2005. (DOI: 10.1016/j.jcrysgro.2005.04.083) |
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| 20. | R.J. Choi, S. Kubo, M. Tsukihara, K. Inoue, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Effects of V/III flux ratio on AlInGaN/AlGaN quantum wells grown by atmospheric pressure MOCVD, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.2, No.7, 2149-2152, 2005. (DOI: 10.1002/pssc.200461442, Elsevier: Scopus) |
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| 21. | Fawang Yan, Masashi Tsukihara, Akihiro Nakamura, Takayuki Yadani, Tetsuya Fukumoto, Yoshiki Naoi and Shiro Sakai : Surface smoothing mechanism of AlN film by initially alternating supply of ammonia, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.43, No.8B, L1057-L1059, 2004. (DOI: 10.1143/JJAP.43.L1057, CiNii: 1390001206266378240) |
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| 22. | Yu-Huai Liu, Hong-Dong Li, Jin-Ping Ao, Young-Bae Lee, Tao Wang and Shiro Sakai : Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes, Journal of Crystal Growth, Vol.268, No.1-2, 30-34, 2004. (DOI: 10.1016/j.jcrysgro.2004.04.103) |
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| 23. | Hong-dong Li, Masashi Tsukihara, Yoshiki Naoi, Bae Young Lee and Shiro Sakai : Investigations of V-shaped Defects and Photoluminescence of Thin GaN-Rich GaNP Layers Grown on a GaN Epilayer by Metalorganic Chemical Vapor Deposition, Applied Physics Letters, Vol.84, No.11, 1886-1888, 2004. (DOI: 10.1063/1.1687462) |
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| 24. | Masashi Tsukihara, Yoshiki Naoi, Hongdong Li, Tomoya Sugahara and Shiro Sakai : The Influence of a Low Temperature GaNP Buffer on GaN Growth by Metalorganic Chemical Vapor Deposition, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2757-2760, 2003. (DOI: 10.1002/pssc.200303550) |
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| 25. | Yoshiki Naoi, Toshihiko Tada, Hongdong Li, Nan Jiang and Shiro Sakai : Growth and evaluation of GaN with SiN Interlayer by MOCVD, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2077-2081, 2003. (DOI: 10.1002/pssc.200303442) |
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| 26. | Igor L Maksimov, Hong-Dong Li, Tomoya Sugahara, Masashi Tsukihara, Atsushi Mori and Shiro Sakai : Cracks and dislocation structures in AlGaN systems, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.0, No.7, 2432-2435, 2003. (DOI: 10.1002/pssc.200303308) |
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| 27. | J Vaitkus, E Gaubas, T Shirahama, Shiro Sakai, Tao Wang, KM Smith and W Cunningham : Space charge effects, carrier capture transient behaviour and α particle detection in semi-insulating GaN, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.514, No.1-3, 141-145, 2003. (DOI: 10.1016/j.nima.2003.08.096) |
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| 28. | Young-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi and Shiro Sakai : High Efficiency GaN-Based LEDs using Plasma Selective Treatment of p-GaN Surface, Physica Status Solidi (A) Applications and Materials Science, Vol.200, No.1, 87-90, 2003. (DOI: 10.1002/pssa.200303253) |
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| 29. | J Vaitkus, W Cunningham, E Gaubas, M Rahman, Shiro Sakai, KM Smith and Tao Wang : Semi-insulating GaN and Its Evaluation for α Particle Detection, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.509, No.1-3, 60-64, 2003. (DOI: 10.1016/S0168-9002(03)01550-X) |
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| 30. | Masashi Tsukihara, Yoshiki Naoi, Hongdong Li and Shiro Sakai : Dislocation Reduction in GaN Layer by Introducing GaN-rich GaNP Intermediate Layers, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.42, No.4A, 1514-1516, 2003. (DOI: 10.1143/JJAP.42.1514, CiNii: 1390282681232981504, Elsevier: Scopus) |
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| 31. | Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, Shiro Sakai and G Collins : Growth of InAs on GaAs(100) by Low-Pressure Metalorganic Chemical Vapor Deposition Employing in situ Generated Arsine Radicals, Journal of Crystal Growth, Vol.250, No.3-4, 290-297, 2003. (DOI: 10.1016/S0022-0248(02)02352-7) |
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| 32. | Masashi Tsukihara, Yoshiki Naoi, Shiro Sakai and Hong-Dong Li : GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition, Applied Physics Letters, Vol.82, No.6, 919-921, 2003. (DOI: 10.1063/1.1544061, CiNii: 1573950401501645056) |
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| 33. | Hong-dong Li, Tao Wang, Nan Jiang, Yu-Huai Liu, Jie Bai and Shiro Sakai : Interaction Between Inversion Domains and InGaN/GaN Multiple Quantum Wells Investigated by Transmission Electron Microscopy, Journal of Crystal Growth, Vol.247, No.1-2, 28-34, 2003. (DOI: 10.1016/S0022-0248(02)01913-9) |
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| 34. | Jin-Ping Ao, Hisao Sato, Takashi Mizobuchi, Kenji Morioka, Shunsuke Kawano, Yoshihiko Muramoto, Young-Bae Lee, Daisuke Sato, Yasuo Ohno and Shiro Sakai : Monolithic Blue LED Series Arrays for High-Voltage AC Operation, Physica Status Solidi (A) Applied Research, Vol.194, No.2, 376-379, 2002. (DOI: 10.1002/1521-396X(200212)194:2<376::AID-PSSA376>3.0.CO;2-3, Elsevier: Scopus) |
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| 35. | Hongdong Li, Masashi Tsukihara, Yoshiki Naoi and Shiro Sakai : Dislocation reduction in GaN epilayers grown on a GaNP buffer on sapphire substrate by metalorganic chemical vapor deposition, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.11B, L1332-L1335, 2002. (DOI: 10.1143/JJAP.41.L1332, CiNii: 1390282681233585664, Elsevier: Scopus) |
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| 36. | Jie Bai, Tao Wang, Yuhuai Liu, Yoshiki Naoi, Hongdong Li and Shiro Sakai : Influence of pyramidal defects on photoluminescence of Mg-doped AlGaN/GaN superlattice structures, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.41, No.10, 5909-5911, 2002. (DOI: 10.1143/JJAP.41.5909, CiNii: 1390001206256518016, Elsevier: Scopus) |
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| 37. | Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Hong-Dong Li, Hisao Sato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.10A, L1037-L1039, 2002. (DOI: 10.1143/JJAP.41.L1037, CiNii: 1390282681231464576) |
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| 38. | Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Yuji Izumi, Yves Lacroix, Hong-Dong Li, Jie Bai, Yoshiki Naoi and Shiro Sakai : High-Performance 348nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.41, No.7A, 4450-4453, 2002. (DOI: 10.1143/JJAP.41.4450, CiNii: 1390282681231785472) |
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| 39. | T Sawada, Y Ito, N Kimura, K Imai, K Suzuki and Shiro Sakai : Characterization of Metal/GaN Shottky Interfaces Based on I-V-T Characteristics, Applied Surface Science, Vol.190, No.1-4, 326-329, 2002. (DOI: 10.1016/S0169-4332(01)01053-4) |
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| 40. | Kenji Shiojima, Suehiro Sugitani and Shiro Sakai : ICTS measurements for p-GaN Schottky contacts, Applied Surface Science, Vol.190, No.1-4, 318-321, 2002. (DOI: 10.1016/S0169-4332(01)00900-X) |
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| 41. | Katsushi Nishino, Daigo Kikuta and Shiro Sakai : Bulk GaN growth by direct synthesis method, Journal of Crystal Growth, Vol.237-239, No.0, 922-925, 2002. (DOI: 10.1016/S0022-0248(01)02079-6) |
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| 42. | 塩島 謙次, 酒井 士郎 : 金属/p-GaN 電極界面の電流輸送機構の理解, 応用物理学会誌, Vol.71, No.3, 340-341, 2002年. (DOI: 10.11470/oubutsu1932.71.340, CiNii: 1573387449373793280) |
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| 43. | Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure, Journal of Crystal Growth, Vol.235, No.1, 173-176, 2002. (DOI: 10.1016/S0022-0248(01)01916-9, Elsevier: Scopus) |
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| 44. | Tao Wang, Yu-Huai Liu, Young-Bae Lee, Yuji Izumi, Jin-Ping Ao, Jie Bai, Hong-Dong Li and Shiro Sakai : Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes, Journal of Crystal Growth, Vol.235, No.1, 177-182, 2002. (DOI: 10.1016/S0022-0248(01)01918-2, CiNii: 1570291226803033472) |
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| 45. | A.V. Akimov, S.A. Cavill, A.J. Kent, N.M. Stanton, Tao Wang and Shiro Sakai : Phonon and Photon Emission from Optically Excited InGaN/GaN Multiple Quantum Wells, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.228, No.1, 107-110, 2001. (DOI: 10.1002/1521-3951(200111)228:1<107::AID-PSSB107>3.0.CO;2-2, Elsevier: Scopus) |
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| 46. | Jie Bai, Tao Wang and Shiro Sakai : Photoluminescence study on InGaN/GaN quantum-well structure grown on (11-20) sapphire substrate, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.40, No.7, 4445-4449, 2001. |
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| 47. | Yoshiki Naoi, Yoshihisa Kawakami, T Nakanishi, Yves Lacroix, Yoshihiro Shintani and Shiro Sakai : Characterization of GaN Films etched using reactive ion etching technique by secondary ion mass spectrometry, Materials Science in Semiconductor Processing, Vol.4, No.6, 555-558, 2001. (DOI: 10.1016/S1369-8001(02)00016-1, Elsevier: Scopus) |
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| 48. | Hong X Wang, Y Amijima, Yasuhiro Ishihama and Shiro Sakai : Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system, Journal of Crystal Growth, Vol.233, No.4, 681-686, 2001. (DOI: 10.1016/S0022-0248(01)01631-1, Elsevier: Scopus) |
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| 49. | Jie Bai, Tao Wang, Hong-Dong Li, Nan Jiang and Shiro Sakai : (0001) oriented GaN epilayer grown on (11-20) sapphire by MOCVD, Journal of Crystal Growth, Vol.231, No.1-2, 41-47, 2001. (DOI: 10.1016/S0022-0248(01)01443-9, Elsevier: Scopus) |
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| 50. | J J Harris, J K Lee, Tao Wang, Shiro Sakai, Z Bougrioua, I Moerman, J E Thrush, B J Webb, H Tang, T Martin, K D Maude and C J Portal : Phase giagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructure, Journal of Physics: Condensed Matter, Vol.13, No.8, 175-181, 2001. (DOI: 10.1088/0953-8984/13/8/102) |
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| 51. | Jie Bai, Tao Wang and Shiro Sakai : Study of the strain relaxation in InGaN/GaN multiple quantum well atructures, Journal of Applied Physics, Vol.90, No.4, 1740-1744, 2001. |
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| 52. | Hiroyuki Naoi, Denis M Shaw, Yoshiki Naoi, G J Collins and Shiro Sakai : Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals, Journal of Crystal Growth, Vol.222, No.3, 511-517, 2001. (DOI: 10.1016/S0022-0248(00)00975-1, Elsevier: Scopus) |
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| 53. | Jie Bai, Tao Wang and Shiro Sakai : Investigation of the strain-relaxation in InGaN/GaN multiple-quantum-well structures, Journal of Applied Physics, Vol.90, No.4, 1740-1744, 2001. |
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| 54. | Jie Bai, Yuji Izumi, Tao Wang and Shiro Sakai : A Study of dislocations in InGaN/GaN multiple-quantum-well structure grownon (11-20) sapphire substrate, Journal of Crystal Growth, Vol.223, No.1-2, 61-68, 2001. (DOI: 10.1016/S0022-0248(00)01013-7) |
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| 55. | J J Harris, J K Lee, D K Maude, J C Portal, Tao Wang and Shiro Sakai : Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures, Semiconductor Science and Technology, Vol.16, No.5, 402-405, 2001. (DOI: 10.1088/0268-1242/16/5/321) |
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| 56. | Yves Lacroix, Sung-Hoon Chung and Shiro Sakai : Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress, Journal of Applied Physics, Vol.89, No.11, 6033-6036, 2001. (DOI: 10.1063/1.1368394, Elsevier: Scopus) |
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| 57. | Tao Wang, Jie Bai and Shiro Sakai : Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrate, Journal of Crystal Growth, Vol.224, No.1/2, 5-10, 2001. (DOI: 10.1016/S0022-0248(01)00748-5, Elsevier: Scopus) |
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| 58. | Tao Wang, Jie Bai and Shiro Sakai : Modulation-doping influence on the photoluminescence from the two-dimensional electron gas of AlGaN/GaN heterostructures, Physical Review B, Condensed Matter and Materials Physics, Vol.63, No.20, 205320, 2001. (DOI: 10.1103/PhysRevB.63.205320, Elsevier: Scopus) |
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| 59. | Shiro Sakai, Tao Wang, Y Morishima and Yoshiki Naoi : A New Method of Reducing Dislocation Density in GaN Layer Grown on Sapphire Substrate by MOVPE, Journal of Crystal Growth, Vol.221, No.1, 334-337, 2000. (DOI: 10.1016/S0022-0248(00)00709-0, Elsevier: Scopus) |
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| 60. | Kenji Shiojima and Shiro Sakai : Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN, IPAP Conf. Ser, Vol.1, 829-832, 2000. |
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| 61. | Sadanojo Nakajima, Daisuke Ikeda and Shiro Sakai : Electronic Structures of GaNP and InNAs Ordered Alloys Calculated by the Pseudopotential Method, IPAP Conf. Ser, Vol.1, 441-443, 2000. |
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| 62. | Shiro Sakai, Hisayuki Saeki, Yuji Izumi and Tao Wang : Indium silicon co-doping in AlGaN/GaN multiple quantum wells, IPAP Conf. Ser, Vol.1, 637-639, 2000. |
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| 63. | Hong X Wang and Shiro Sakai : The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Compressive Stress in a GaN Film on a Sapphire Substrate, IPAP Conf. Ser, Vol.1, 144-146, 2000. |
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| 64. | Takayuki Sawada, Yuji Itoh, Naohito Kimura, Kazuaki Imai, Kazuhiko Suzuki and Shiro Sakai : Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diode, IPAP Conf. Ser, Vol.1, 801-804, 2000. |
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| 65. | Tao Wang, Jie Bai and Shiro Sakai : The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure, IPAP Conf. Ser, Vol.1, 524-527, 2000. |
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| 66. | Tao Wang, Jie Bai and Shiro Sakai : Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (11-20) Sapphire Substrates, IPAP Conf. Ser, Vol.1, 382-385, 2000. |
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| 67. | Yves Lacroix, Sung-Hoon Chung and Shiro Sakai : Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress, IPAP Conf. Ser, Vol.1, 479-481, 2000. |
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| 68. | Yves Lacroix, T Nakanishi and Shiro Sakai : In-Situ Etch-Layer Monitoring of GaN Based Laser Diode Structure, IPAP Conf. Ser, Vol.1, 782-785, 2000. |
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| 69. | Yasuo Nakanishi, Akihiro Wakahara, Akira Yoshida, Takeshi Ohsima, Hisayoshi Itoh and Shiro Sakai : Photoluminescence Properties of Eu-doped GaN by Ion Implantation, IPAP Conf. Ser, Vol.1, 486-489, 2000. |
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| 70. | J A Davidson, P Dawson, Tao Wang, Tomoya Sugahara, J W Orton and Shiro Sakai : Photoluminescence Studies of InGaN/GaN Multi-Quantum wellsstructuresSubstrates, Semiconductor Science and Technology, Vol.15, No.6, 497-505, 2000. (DOI: 10.1088/0268-1242/15/6/302, Elsevier: Scopus) |
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| 71. | Jie Bai, Tao Wang and Shiro Sakai : Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structuresSubstrates, Journal of Applied Physics, Vol.88, No.8, 4729-4733, 2000. (DOI: 10.1063/1.1311831, Elsevier: Scopus) |
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| 72. | F P Fewster, L N Andrew, H O Hughes, C Staddon, T C Foxon, A Bell, S T Cheng, Tao Wang, Shiro Sakai, K Jacobs and I Moerman : X-ray studies of group III-nitride quantum wells with high quality interfaces, Journal of Vacuum Science & Technology B, Vol.18, No.4, 2300-2303, 2000. (DOI: 10.1116/1.1306332, Elsevier: Scopus) |
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| 73. | Durga Basak, T Nakanishi and Shiro Sakai : Reactive ion etching of GaN using BCl3,BCl3/Ar and BCl3/N2 gas plasmas, Solid-State Electronics, Vol.44, No.4, 725-728, 2000. (DOI: 10.1016/S0038-1101(99)00303-2, Elsevier: Scopus) |
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| 74. | Tomoya Sugahara and Shiro Sakai : Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates, IEICE Transactions on Electronics, Vol.E83-C, No.4, 598-604, 2000. (CiNii: 1572543027349091968, Elsevier: Scopus) |
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| 75. | Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Optical properties of bound excitons and biexcitons in GaN, IEICE Transactions on Electronics, Vol.E83-C, No.4, 605-611, 2000. (CiNii: 1571135652465545088, Elsevier: Scopus) |
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| 76. | Mohamed Lachab, Masaaki Nozaki, Jie Wang, Yasuhiro Ishikawa, Qhalid Fareed, Tao Wang, Tatsunori Nishikawa, Katsushi Nishino and Shiro Sakai : Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process, Journal of Applied Physics, Vol.87, No.3, 1374-1378, 2000. |
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| 77. | Saulius Juodkazis, Petr G. Eliseev, Mitsuru Watanabe, Hong-Bo Sun, Shigeki Matsuo, Tomoya Sugahara, Shiro Sakai and Hiroaki Misawa : Annealing of GaN-InGaN MQW: Correlation between the Bandgap and Yellow Photoluminescence, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.39, No.2, 393-396, 2000. (DOI: 10.1143/JJAP.39.393, Elsevier: Scopus) |
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| 78. | Shiro Sakai : Homoepitaxial and Heteroepitaxial Growth of InGaN/GaN, Electronics and Communications in Japan(Part II:Electronics), Vol.83, No.2, 17-25, 2000. |
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| 79. | Durga Basak, Katsushi Nishino, Qhalid RS Fareed and Shiro Sakai : Characterization of RIE etched surface of GaN using methane gas with chlorine plasma, Journal of Vacuum Science & Technology B, Vol.18, No.5, 2491-2494, 2000. (DOI: 10.1116/1.1289551, Elsevier: Scopus) |
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| 80. | Petr G Eliseev, Marek Osinski, Jinhyun Lee, Tomoya Sugahara and Shiro Sakai : Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire, Journal of Electronic Materials, Vol.29, No.3, 332-341, 2000. |
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| 81. | H Naoi, D M Shaw, G J Collins and Shiro Sakai : Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals, Journal of Crystal Growth, Vol.219, No.4, 481-484, 2000. (DOI: 10.1016/S0022-0248(00)00769-7, Elsevier: Scopus) |
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| 82. | Hong X Wang, Tao Wang, Sourindra Mahanty, F Komatsu, T Inaoka, Katsushi Nishino and Shiro Sakai : Growth of GaN layer by metallorganic vapor deposition system with a novel three-flow reactor, Journal of Crystal Growth, Vol.218, 148-154, 2000. |
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| 83. | P Li, Soo-Jin Chua, Maosheng Hao, W Wang, X Zhang, Tomoya Sugahara and Shiro Sakai : The formation of In-rich regions at the perphery of the inverted hexahonalpits of InGaN thin-films grown by metalorganic vapor phase epitaxy, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, Vol.5, Suppl. 1, 580-585, 2000. |
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| 84. | Mohamed Lachab, D-H Youn, Qhalid RS Fareed, Tao Wang and Shiro Sakai : Characterization of Mg-doped GaN Grown by Metaloragnic Chemical Vapor deposition, Solid-State Electronics, Vol.44, No.9, 260-264, 2000. |
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| 85. | Qhalid RS Fareed, S Juodkazis, Sung-Hoon Chung, Tomoya Sugahara and Shiro Sakai : Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy, Materials Chemistry and Physics, Vol.64, 260-264, 2000. (DOI: 10.1016/S0254-0584(99)00234-5, Elsevier: Scopus) |
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| 86. | Tao Wang, Y Morishima, N Naoi and Shiro Sakai : A new method for a great reduction of dislocation density in a GaN layer on a sapphire substrate, Journal of Crystal Growth, Vol.213, No.1-2, 188-192, 2000. (DOI: 10.1016/S0022-0248(00)00373-0, Elsevier: Scopus) |
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| 87. | Yoichi Yamada, Chiharu Sasaki, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers, Journal of Applied Physics, Vol.86, No.12, 7186-7188, 1999. |
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| 88. | Qhalid Fareed, Satoru Tottori, Takeshi Inaoka, Katsushi Nishino and Shiro Sakai : Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method, Journal of Crystal Growth, Vol.207, No.3, 174-178, 1999. |
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| 89. | Tomoya Sugahara, Shiro Sakai, Qhalid RS Fareed, Satoru Tottori, Mohamed Lachab and Tao Wang : Investigation of InGaN/GaN QWs grown on sapphire and bulk GaN substrates, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 273-277, 1999. (DOI: 10.1002/(SICI)1521-3951(199911)216:1<273::AID-PSSB273>3.0.CO;2-O, Elsevier: Scopus) |
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| 90. | Tao Wang, Daisuke Nakagawa, Mohamed Lachab, Tomoya Sugahara and Shiro Sakai : Investigation of optical properties in InGaN/GaN mutiple quantum well and single quantum well, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 279-285, 1999. |
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| 91. | Tao Wang, Yuzo Ohno, Mohamed Lachab, Daisuke Nakagawa, T Shirahama, Shiro Sakai and Hideo Ohno : MOCVD-Growth and Transport property investigation of two dimensional electron gas in AlGaN/GaN heterostructures on sapphire substrate, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 743-748, 1999. |
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| 92. | Hong Xing Wang, Tao Wang, Mohamed Lachab, Yasuhiro Ishikawa, Maosheng Hao, Koichi Oyama, Katsushi Nishino, Shiro Sakai and Kikuo Tominaga : Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition, Journal of Crystal Growth, Vol.206, No.3, 241-244, 1999. |
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| 93. | Sourindra Mahanty, Maosheng Hao, Tomoya Sugahara, Qhalid RS Fareed, Yoshinori Morishima, Yoshiki Naoi, Tao Wang and Shiro Sakai : V-shaped Defects in InGaN/GaN Multiquantum Wells, Materials Letters, Vol.41, No.2, 67-71, 1999. |
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| 94. | Yoichi Yamada, Chiharu Sasaki, Yohei Yoshida, Satoshi Kurai, Tsunemasa Taguchi, Tomoya Sugahara, Katsushi Nishino and Shiro Sakai : Magneto-luminescence spectroscopy of excitonic transitions in homoepitaxial GaN layers, Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.216, No.1, 27-30, 1999. (DOI: 10.1002/(SICI)1521-3951(199911)216:1<27::AID-PSSB27>3.0.CO;2-T, Elsevier: Scopus) |
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| 95. | Tohru Tsuruoka, Makoto Kawasaki, Sukekatsu Ushioda, R. Francy, Yoshiki Naoi, Tomoya Sugahara, Shiro Sakai and Yoshihiro Shintani : Combined HREELS/LEED Study on the Oxidation of GaN Surfaces, Surface Science, Vol.427-428, 257-261, 1999. |
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| 96. | Maosheng Hao, Sourindra Mahanty, Tomoya Sugahara, Sadanori Morishima, Yusuke Takenaka, Tao Wang, Satoru Tottori, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Configuration of Dislocations in Lateral Overgrowth GaN Films, Journal of Applied Physics, Vol.85, No.9, 6497-6501, 1999. |
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| 97. | Durga Basak, Kenji Yamashita, Tomoya Sugahara, Qhalid Fareed, Daisuke Nakagawa, Katsushi Nishino and Shiro Sakai : Reactive ion etching of GaN and AlxGa1-xN using Cl2/CH4/Ar plasma, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.4B, 2646-2651, 1999. |
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| 98. | Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Surface morphology studies on sublimation grown bulk GaN by atomic force microscopy, Journal of Crystal Growth, Vol.200, No.3-4, 348-352, 1999. |
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| 99. | Jie Wang, Masaaki Nozaki, Mohamed Lachab, Qhalid RS Fareed, Yasuhiro Ishikawa, Tao Wang, Yoshiki Naoi and Shiro Sakai : Formation and Optical Properties of InGaN/GaN Nano-structures Grown on Amorphous Si Substrates by MOCVD, Journal of Crystal Growth, Vol.200, No.1-2, 85-89, 1999. |
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| 100. | Jie Wang, Masaaki Nozaki, Yasuhiro Ishikawa, Mohamed Lachab, Qhalid RS Fareed, Tao Wang and Shiro Sakai : Formation and Optical Properties of Selectively Grown InGaN/GaN Nano-Structures, Inst. Phys. Conf. Ser., Vol.162, 829-832, 1999. |
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| 101. | Kenji Shiojima, Tomoya Sugahara and Shiro Sakai : Large Schottky barriers for Ni/p-GaN contacts, Applied Physics Letters, Vol.74, No.14, 1936-1937, 1999. (DOI: 10.1063/1.123733, Elsevier: Scopus) |
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| 102. | Jie Wang, Qhalid RS Fareed, Sourindra Mahanty, Satoru Tottori, Yasuhiro Ishikawa, Tomoya Sugahara, Y Morishima, Katsushi Nishino, Marek Osinski and Shiro Sakai : Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method structures Substrates, Journal of Applied Physics, Vol.85, No.3, 1895-1899, 1999. |
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| 103. | Jie Wang, Masaaki Nozaki, Mohamed Lachab, Yasuhiro Ishikawa, Qhalid RS Fareed, Tao Wang, Maosheng Hao and Shiro Sakai : MOCVD selective growth and characterization of InGaN quantum dots, Applied Physics Letters, Vol.75, 950-952, 1999. |
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| 104. | Satoshi Kurai, Akira Kawabe, Taiichi Sugita, Shuichi Kubo, Yoichi Yamada, Tsunemasa Taguchi and Shiro Sakai : Excitonic emission under high excitation of hexagonal GaN single crystal grown by sublimation method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.38, No.2A, 102-104, 1999. |
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| 105. | Jie Wang, Masaaki Nozaki, Yasuhiro Ishikawa, Maosheng Hao, Sadanori Morishima, Tao Wang, Yoshiki Naoi and Shiro Sakai : Fabrication of Nanoscale Structures of InGaN by MOCVD Lateral Overgrowth, Journal of Crystal Growth, Vol.197, No.1-2, 48-53, 1999. |
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| 106. | Doo-Hyeb Youn, Mohamed Lachab, Maosheng Hao, Tomoya Sugahara, Hironori Takenaka, Yoshiki Naoi and Shiro Sakai : Investigation on the p-type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.2A, 631-634, 1999. |
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| 107. | Shiro Sakai : InGaN GaN quantum well structures grown on bulk GaN and sapphire substrates, The Journal of the Korean Physical Society, Vol.34, 220-223, 1999. |
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| 108. | Tao Wang, Daisuke Nakagawa, Mohamed Lachab, Tomoya Sugahara and Shiro Sakai : Optical investigation of InGaN/GaN multiple quantum wells, Applied Physics Letters, Vol.74, 3128-3130, 1999. (DOI: 10.1063/1.124084, Elsevier: Scopus) |
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| 109. | Tao Wang, Mohamed Lachab, Daisuke Nakagawa, T Shirahama and Shiro Sakai : Investigation of Two Dimensional Electron Gas in AlGaN/GaN Heterostructures grown by MOCVD, Journal of Crystal Growth, Vol.203, No.3, 443-446, 1999. (DOI: 10.1016/S0022-0248(99)00110-4, Elsevier: Scopus) |
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| 110. | Tomoya Sugahara, Maosheng Hao, Tao Wang, Daisuke Nakagawa, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Role of Dislocation in InGaN Phase Separation, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.10B, L1195-L1198, 1998. |
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| 111. | Doo-Hyeb Youn, Maosheng Hao, Yoshiki Naoi, Sourindra Mahanty and Shiro Sakai : Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.9A, 4667-4671, 1998. |
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| 112. | Jie Wang, Satoru Tottori, Hisao Sato, Maosheng Hao, Yasuhiro Ishikawa, Ken-ichi Yamashita and Shiro Sakai : Lateral Obergrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.8, 4475-4476, 1998. |
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| 113. | Tohru Tsuruoka, Nobuyuki Takahashi, R. Francy, Sukekatsu Ushioda, Yoshiki Naoi, Hisao Sato, Shiro Sakai and Yoshihiro Shintani : HREELS Analysis of the Vibrational and Electronic Properties of GaN Film on Sapphire(0001) Grown by Metalorganic Chemical Vapor Deposition, Journal of Crystal Growth, Vol.189-190, 677-681, 1998. |
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| 114. | Shiro Sakai, T.C. Cheng, T.C. Foxon, Tomoya Sugahara, Yoshiki Naoi and Hiroyuki Naoi : Growth of InNAs on GaAs(100) Substrates by Moleculer-Beam Epitaxy, Journal of Crystal Growth, Vol.189-190, 471-475, 1998. |
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| 115. | Yoshiki Naoi, Keizo Kobatake, Satoshi Kurai, Katsushi Nishino, Hisao Sato, Ken-ichi Yamashita, Masaaki Nozaki, Shiro Sakai and Yoshihiro Shintani : Characterization of Bulk GaN Grown by Sublimation Technique, Journal of Crystal Growth, Vol.189-190, 163-166, 1998. |
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| 116. | Shiro Sakai, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Satoru Tottori, Maosheng Hao, Koichi Wada and Katsushi Nishino : Growth of Bulk GaN Sublimation Method, Materials Science Forum, Vol.264-268, No.PT2, 1107-1110, 1998. |
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| 117. | Hisao Sato, Tomoya Sugahara, Yoshiki Naoi and Shiro Sakai : Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.4A, 2013-2015, 1998. |
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| 118. | Doo-Hyeb Youn, Maosheng Hao, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi and Shiro Sakai : Ohmic Contact to p-type GaN, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.4A, 1768-1771, 1998. |
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| 119. | Tomoya Sugahara, Hisao Sato, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Satoru Tottori, Kenji Yamashita, Katsushi Nishino, Katsushi Nishino and Shiro Sakai : Direct Evidence that Dislocations are Non-radiative Recombination Centers in GaN, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.4A, L398-L400, 1998. |
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| 120. | Maosheng Hao, Tomoya Sugahara, Hisao Sato, Sadanori Morishima, Yoshiki Naoi, L.T. Romano and Shiro Sakai : Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.37, No.3A, L291-L293, 1998. |
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| 121. | Hisao Sato, Tomoya Sugahara, Maosheng Hao, Yoshiki Naoi, Satoshi Kurai, Ken-ichi Yamashita, Katsushi Nishino and Shiro Sakai : Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.37, No.2, 621-631, 1998. |
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| 122. | Shiro Sakai, Satoshi Kurai, Katsushi Nishino, K Wada, Hisao Sato and Yoshiki Naoi : Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD, Material Research Society Symposium Proc., Vol.449, 15-22, 1997. |
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| 123. | Hisao Sato, Yoshiki Naoi and Shiro Sakai : Structural analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate grown by MOCVD, Materials Research Society Symposia Proceedings, Vol.449, 441-446, 1997. (DOI: 10.1557/PROC-449-441) |
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| 124. | Hisao Sato, Yoshiki Naoi and Shiro Sakai : X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.36, No.4A, 2018-2021, 1997. (DOI: 10.1143/JJAP.36.2018, Elsevier: Scopus) |
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| 125. | Yang Tao, Sadanojo Nakajima and Shiro Sakai : Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.36, No.3B, 320-322, 1997. (DOI: 10.1143/JJAP.36.L320, Elsevier: Scopus) |
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| 126. | Hisao Sato, Mihir Ranjan Sarkar, Yoshiki Naoi and Shiro Sakai : XPS Measurement of Valence Band Discontinuity at GaP/GaN Heterostructures, Solid-State Electronics, Vol.41, No.2, 205-207, 1997. (DOI: 10.1016/S0038-1101(96)00167-0, Elsevier: Scopus) |
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| 127. | Hiroyuki Naoi, Yoshiki Naoi and Shiro Sakai : MOCVD Growth of InAsN for Infrared Applications, Solid-State Electronics, Vol.41, No.2, 319-321, 1997. (DOI: 10.1016/S0038-1101(96)00236-5, Elsevier: Scopus) |
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| 128. | Tatsuya Okada, Satoshi Kurai, Yoshiki Naoi, Katsushi Nishino, Fukuji Inoko and Shiro Sakai : Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.10, 1318-1320, 1996. |
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| 129. | Satoshi Kurai, Toshimitsu Abe, Yoshiki Naoi and Shiro Sakai : Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by MOCVD, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.35, No.3, 1637-1640, 1996. |
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| 130. | Tao Yang, Yoshiki Naoi, Hiroyuki Naoi and Shiro Sakai : X-ray Photoelectron Spectroscopy of Zinc Blend InN and Valence-Band Discontinuity in the Heterojunction InN/GaAs, Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes, 504-505, 1996. |
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| 131. | Satoshi Kurai, Yoshiki Naoi, Toshimitsu Abe, Susumu Ohmi and Shiro Sakai : Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.35, No.1B, 77-79, 1996. |
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| 132. | Tao Yang, Sadanojo Nakajima and Shiro Sakai : Electronic Structures of Wurtzite GaN, InN and their Alloy Ga1-xInxN Calculated by the Tight-Binding Method, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.34, No.11, 5912-2921, 1995. (DOI: 10.1143/jjap.34.5912, CiNii: 1390282681223262592) |
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| 133. | Sadanojo Nakajima, Tao Yang and Shiro Sakai : Valence-Band-Edge Energy of Group-III, Nitride Alloy Semiconductors, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.34, No.5, 2213-2215, 1995. (DOI: 10.1143/JJAP.34.2213, Elsevier: Scopus) |
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| 134. | Sadanojo Nakajima, Tao Yang and Shiro Sakai : Electronic Structure of Ga1-xInxN by the Tight-Binding Method with Nearest-Neighbor s,p and d and Second-Neighbor s and p Interactions, International Conference on Silicon Carbide and Rerated Materials-1995,Institute of Physics Conference Series, Vol.Number 142, 947-950, 1995. |
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| 135. | Yoshihiro Ueta, Hisao Sato, Shiro Sakai and Masuo Fukui : X-ray photoelectron spectroscopy study of GaN and GaP surfaces annealed in PH3 and NH3 and metalorganic chemical vapor deposition growth of GaN / GaP heterostructures, Journal of Crystal Growth, Vol.145, No.1-4, 203-208, 1994. |
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| 136. | Yoshiki Naoi, Satoshi Kurai, Shiro Sakai, Tao Yang and Yoshihiro Shintani : Stress Distribution and Dislocation Dynamics in GaAs grown on Si by MOCVD, Journal of Crystal Growth, Vol.145, No.1-4, 321-325, 1994. |
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| 137. | Naoki Wada, Shiro Sakai and Masuo Fukui : GaAs/AlGaAs Light Emitters Fabricated on Undercut GaAs on Si, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.33, No.3A, 1268-1274, 1994. (DOI: 10.1143/JJAP.33.1268, Elsevier: Scopus) |
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| 138. | Naoki Wada, Shiro Sakai and Masuo Fukui : Thermal Stress and Dislocation Density in Undercut GaAs on Si, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.33, No.2, 976-985, 1994. (DOI: 10.1143/JJAP.33.976, Elsevier: Scopus) |
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| 139. | Naoki Wada, Shiro Sakai and Masuo Fukui : Photoluminescence Dark Spot Dynamics in GaAs Grown on Si, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.33, No.1B, 864-868, 1994. (DOI: 10.1143/JJAP.33.864) |
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| 140. | Shiro Sakai, Yoshihiro Ueta and Yoji Terauchi : Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.32, No.10, 4413-4417, 1993. (DOI: 10.1143/JJAP.32.4413, Elsevier: Scopus) |
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| 141. | Naoki Wada, Koichi Iwabu, Shiro Sakai and Masuo Fukui : Photoluminescence-dark-spot-free AlGaAs grown on Si substrate, Applied Physics Letters, Vol.60, No.11, 1354-1356, 1992. (DOI: 10.1063/1.107315) |
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| 142. | Naoki Wada, Shinichi Yoshimi, Shiro Sakai, Chun Lin Shao and Masuo Fukui : Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.31, No.2A, L78-L81, 1992. (DOI: 10.1143/JJAP.31.L78, Elsevier: Scopus) |
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| 143. | Nobuyuki Ito, Tsutomu Uesugi, Shiro Sakai, Masayoshi Umeno and Shuzo Hattori : InGaAsP/InP Wavelength Division Solar Cells, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.20, No.Suppl. 20-2, 121-125, 1981. (DOI: 10.7567/JJAPS.20S2.121, Elsevier: Scopus) |
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| 144. | 酒井 士郎, 延原 (名), 梅野 正義 : MOCVD法によるGaAs, GaAlAsのエピタキシャル成長, 豊田研究報告, Vol.34, 16, 1981年. (CiNii: 1520572357948032384) |
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| 145. | Shiro Sakai, Takahiro Aoki, Miharu Tobe and Masayoshi Umeno : Simplified Dual Channel Optical Transmission Using Integrated Light Emitters And Photo- detectors, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.20, No.3, L205-L207, 1981. (DOI: 10.1143/JJAP.20.L205, Elsevier: Scopus) |
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| 146. | Shiro Sakai and Masayoshi Umeno : Theoretical Analysis of Simplified Four Wavelength Division Solar Cell System, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.20, No.1, 125-127, 1981. (DOI: 10.1143/JJAP.20.125, Elsevier: Scopus) |
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| 147. | Shiro Sakai and M. Umeno : Theoretical Analysis of New Wavelength-Division Solar Cells, Journal of Applied Physics, Vol.51, No.9, 5018-5024, 1980. (DOI: 10.1063/1.328382, Elsevier: Scopus) |
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| 148. | M. Tobe, Y. Amemiya, Shiro Sakai and M. Umeno : High-Sensitivity InGaAsP/InP Phototransistors, Applied Physics Letters, Vol.37, No.1, 73-75, 1980. (DOI: 10.1063/1.91706, Elsevier: Scopus) |
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| 149. | Miharu Tobe, Shiro Sakai, Masayoshi Umeno and Yoshifumi Amemiya : New Wavelength- Demultiplexing InGaAsP/ InP Photodiodes, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.Suppl.19-2, 213-216, 1980. (DOI: 10.7567/JJAPS.19S2.213) |
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| 150. | Shiro Sakai, Masayoshi Umeno and Yoshifumi Amemiya : Optimum Designing of InGaAsP/InP Wavelength Demultiplexing Photodiodes, Trans. IECE Jpn., Vol.E63, No.3, 192-197, 1980. |
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| 151. | 酒井 士郎, M. Umeno, Y. Amemiya : Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.19, No.1, 1980年. |
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| 152. | 酒井 士郎, 梅野 正義, 雨宮 好文 : 波長多重光通信用InGaAsP/InP光検出器, 電子通信学会論文誌 (C), Vol.62-C, No.11, 787-788, 1979年. |
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| 153. | 梅野 正義, 酒井 士郎 : InGaAsP/InP系赤外線検出器, レーザ研究, Vol.7, No.3, 306-310, 1979年. |
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| 154. | 酒井 士郎, 梅野 正義, 戸部 美春, 雨宮 好文 : ヘテロ接合光ダイオードの量子効率と高速応答特性に関する一考察, 電子通信学会論文誌 (C), Vol.62-C, No.10, 676-681, 1979年. |
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| 155. | Shiro Sakai, M. Umeno, T. Aoki, M. Tobe and Y. Amemiya : InGaAsP/InP Photodiodes Antireflectively Coated with InP Native Oxide, IEEE Journal of Quantum Electronics, Vol.QE-15, No.10, 1077-1078, 1979. (DOI: 10.1109/JQE.1979.1069909) |
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| 156. | Shiro Sakai, Takahiro Aoki, Yoshifumi Amemiya and Masayoshi Umeno : A New InGaAsP/InP Dual Wavelength LED, Applied Physics Letters, Vol.35, No.8, 588-589, 1979. (DOI: 10.1063/1.91217, Elsevier: Scopus) |
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| 157. | Shiro Sakai, Masayoshi Umeno, Takahiro Aoki, Miharu Tobe and Yoshifumi Amemiya : InGaAsP/InP Native Oxide Stripe Lasers, Japanese Journal of Applied Physics, Vol.18, No.5, 1003-1004, 1979. (DOI: 10.1143/JJAP.18.1003, CiNii: 1572824502237970304) |
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| 158. | Shiro Sakai, Masayoshi Umeno and Yoshifumi Amemiya : InGaAsP/InP Double- Heterostructure Photodiodes, Japanese Journal of Applied Physics, Vol.17, No.9, 1701-1703, 1978. (DOI: 10.1143/JJAP.17.1701, CiNii: 1390282681245553408, Elsevier: Scopus) |
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| 159. | Shiro Sakai, Masuo Fukui, Tadamitsu Iritani and Osamu Tada : New method for measurement of electric-field distribution on semiconductors, IEEE Transactions on Instrumentation and Measurement, Vol.IM-26, No.3, 267-269, 1977. |
| 1. | 酒井 士郎 : 半導体レーザの周波数スペクトラムの微細構造, 名工大学報, Vol.33, 189-195, 1982年. |
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| 2. | 梅野 正義, 酒井 士郎 : InP上へのInGaAsP層の結晶成長とその光通信用光検出器への応用, 豊田研究報告, Vol.33, 30-36, 1980年. |
| 1. | Fawang Yan, Katsushi Nishino and Shiro Sakai : Growth and Characteristics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.45, No.27, L697-L700, 2006. (DOI: 10.1143/JJAP.45.L697, CiNii: 1521136280203562112) |
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| 2. | Sasaki Akio, K Nishizuka, Tao Wang, Shiro Sakai, A Kaneta, Yoichi Kawakami and Shigeo Fujita : Radiative Carrier Recombination Dependent on Temperature and Well WIdth of InGaN/GaN Single Quantum Well, Solid State Communications, Vol.129, No.1, 31-35, 2004. (DOI: 10.1016/j.ssc.2003.09.018) |
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| 3. | R Aleksiejunas, M Sudzius, T Malinauskas, J Vaitkus, K Jarasiunas and Shiro Sakai : Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers, Applied Physics Letters, Vol.83, No.6, 1157-1159, 2003. (DOI: 10.1063/1.1599036, CiNii: 1572261551643766016) |
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| 4. | Jin-Ping Ao, Tao Wang, Daigo Kikuta, Yu-Huai Liu, Shiro Sakai and Yasuo Ohno : AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.42, No.Part1, 4A, 1588-1589, 2003. (DOI: 10.1143/JJAP.42.1588, CiNii: 1390001206256712448, Elsevier: Scopus) |
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| 5. | Kazunori Aoyama and Shiro Sakai : A Novel Method of Building a Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.42, No.3B, L270-L272, 2003. (DOI: 10.1143/JJAP.42.L270, Elsevier: Scopus) |
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| 6. | Tao Wang, Yu-Huai Liu, Young-Bae Lee, Jin-Ping Ao, Jie Bai and Shiro Sakai : 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate, Applied Physics Letters, Vol.81, No.14, 2508-2510, 2002. (DOI: 10.1063/1.1510967, CiNii: 1570572701781279360) |
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| 7. | Hong-dong Li, Tao Wang, Yuhuai Liu, Jin-Ping Ao and Shiro Sakai : V-Shaped Defects in AlGaN/GaN Superlattice Grown on Thin Undoped-GaN Layers on Sapphire Substrate, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.41, No.6B, L732-L735, 2002. (DOI: 10.1143/JJAP.41.L732, CiNii: 1390001206256869632) |
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| 8. | Hongdong Li, Tao Wang, Yves Lacroix, Nan Jiang and Shiro Sakai : Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.40, No.11B, 1254-1256, 2001. (DOI: 10.1143/JJAP.40.L1254) |
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| 9. | J K Lee, J J Harris, J A Kent, Tao Wang, Shiro Sakai, D K Maude and C J Portal : Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures, Applied Physics Letters, Vol.78, No.19, 2893-2895, 2001. (DOI: 10.1063/1.1367310, Elsevier: Scopus) |
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| 10. | Tao Wang, Jie Bai, Shiro Sakai and J K Ho : Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes, Applied Physics Letters, Vol.78, 2617, 2001. (DOI: 10.1063/1.1368374, Elsevier: Scopus) |
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| 11. | Kenji Shiojima, Tomoya Sugahara and Shiro Sakai : Current transport mechanism of p-GaN Schottky contactssubstrate by MOCVDstructuresscattering time, Applied Physics Letters, Vol.77, No.26, 4353-4355, 2000. |
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| 12. | Sung Hoon Chung, Mohamed Lachab, Tao Wang, Yves Lacroix, Durga Basak, Qhalid Fareed, Yoshihisa Kawakami, Katsushi Nishino and Shiro Sakai : Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.39, No.8, 4749-4750, 2000. (Elsevier: Scopus) |
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| 13. | Tao Wang, Daisuke Nakagawa, Hong-Bo Sun, Hong X Wang, Jie Bai, Shiro Sakai and Hiroaki Misawa : time MOCVDstructuresscattering by substrate sapphire on grown layer GaN undoped of quality the on temperature growth and layer buffer of influence The, Applied Physics Letters, Vol.76, No.16, 2220-2222, 2000. |
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| 14. | Tao Wang, Hisayuki Saeki, Jie Bai, Mohamed Lachab, T Shirahama and Shiro Sakai : Effect of silicon-doping on the optical and transport properties of InGaN/GaN multiple quantum well structuresscattering time, Applied Physics Letters, Vol.76, No.13, 1737-1739, 2000. (Elsevier: Scopus) |
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| 15. | Tao Wang, Jie Bai, Shiro Sakai, Yuzo Ohno and Hideo Ohno : Magneto-transport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time, Applied Physics Letters, Vol.76, No.19, 1-3, 2000. (DOI: 10.1063/1.126460, Elsevier: Scopus) |
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| 16. | Tao Wang, Tomoya Sugahara, Hong-Bo Sun, Hong X Wang, Jie Bai, Shiro Sakai and Hiroaki Misawa : The Influence of Buffer Layer and Growth Temperature on the Quality of Undoped GaN Layer Grown Sapphire Substrate by Metal Organic Chemical Vepor Deposition, Applied Physics Letters, Vol.76, No.16, 2220-2222, 2000. (DOI: 10.1063/1.126302, Elsevier: Scopus) |
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| 17. | Eliseev G. Petr, Hong-Bo Sun, Saulius Juodkazis, Tomoya Sugahara, Shiro Sakai and Hiroaki Misawa : Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.38, No.7, 839-841, 1999. (DOI: 10.1143/JJAP.38.L839, Elsevier: Scopus) |
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| 18. | Tao Wang, Yuzo Ohno, Mohamed Lachab, Daisuke Nakagawa, T Shirahama, Shiro Sakai and Hideo Ohno : Electron mobility exceeding 104cm2/V.s in an AlGaN-GaN heterostructure grown on a sapphire substrate, Applied Physics Letters, Vol.74, No.23, 3531-3533, 1999. (DOI: 10.1063/1.124151, CiNii: 1050282677719830400) |
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| 19. | Maosheng Hao, Sourindra Mahanty, Qhalid Fareed, Satoru Tottori, Katsushi Nishino and Shiro Sakai : Infrared properties of bulk GaN, Applied Physics Letters, Vol.74, No.19, 2788-2790, 1999. (DOI: 10.1063/1.124014, Elsevier: Scopus) |
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| 20. | Durga Basak, Kenji Yamashita, Tomoya Sugahara, Daisuke Nakagawa, Qhalid RS Fareed, Katsushi Nishino and Shiro Sakai : Selective etching of GaN over AlxGa1-xN using Reactive Ion Plasma of Cl2/CH4/Ar gas Mixture, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.1A, 42-43, 1999. (DOI: 10.1143/JJAP.38.42, Elsevier: Scopus) |
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| 21. | Durga Basak, Mohamed Lachab, T Nakanishi and Shiro Sakai : Effect of Reactive Ion Etching on Yellow Luminescence of GaN, Applied Physics Letters, Vol.75, No.23, 3710-3712, 1999. (DOI: 10.1063/1.125437, Elsevier: Scopus) |
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| 22. | Tao Wang, Tomoya Sugahara, Shiro Sakai and J Orton : The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diodes, Applied Physics Letters, Vol.74, No.10, 1376-1378, 1999. (DOI: 10.1063/1.123555, Elsevier: Scopus) |
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| 23. | Satoshi Kurai, Katsushi Nishino and Shiro Sakai : Nucleation Control in the Growth of Bulk GaN by Sublimation Method, Japanese Journal of Applied Physics, Part 2 (Letters), Vol.36, No.2B, 184-186, 1997. (DOI: 10.1143/jjap.36.l184, CiNii: 1390282681227090688) |
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| 24. | Shiro Sakai, T. Aoki and M. Umeno : Dual Wavelength InGaAsP/InP TJS Lasers, Electronics Letters, Vol.18, No.1, 18, 1982. (DOI: 10.1049/el:19820014, Elsevier: Scopus) |
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| 25. | Shiro Sakai, T. Aoki and M. Umeno : InGaAsP/InP Dual Wavelength Lasers, Electronics Letters, Vol.18, No.1, 17, 1982. (CiNii: 1570854174071434496) |
| 1. | 酒井 士郎 : 半導体発光デバイスの現状, 日本画像学会誌, Vol.191, No.3, 238-245, 2011年6月. |
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| 2. | 酒井 士郎 : 短波長LEDチップを用いた白色照明, 光学, Vol.38, No.3, 127-131, 2009年3月. |
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| 3. | 酒井 士郎 : LEDの動作原理と材料, デスプレイアンドイメージング, Vol.8, 103-113, 2000年1月. |
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| 4. | 酒井 士郎 : GaN系結晶のバルクおよびエピタキシャル成長, 日本結晶成長学会誌, Vol.27, No.4, 194-202, 2000年1月. |
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| 5. | 酒井 士郎 : InGaN/GaN 結晶のホモエピタキシャル成長およびヘテロエピタキシャル成長の研究, 電子情報通信学会論文誌(C), Vol.J82-C-I, No.4, 147-155, 1999年1月. |
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| 6. | 酒井 士郎 : GaNバルク結晶の育成とデバイス応用への展望, 応用物理学会誌, Vol.67, No.11, 1276-1280, 1998年11月. |
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| 7. | 西野 克志, 酒井 士郎 : 昇華法によるGaN単結晶育成, 日本結晶成長学会誌, Vol.25, No.4, 19-24, 1998年4月. |
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| 8. | 酒井 士郎 : LEDディスプレイ, 映像情報メディア学会誌, No.4, 1997年4月. |
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| 9. | 酒井 士郎 : GaN系青色発光ダイオードの発明について, 日経エレクトロニクス, Vol.5, No.8, 228-229, 1995年5月. |
| 1. | Shiro Sakai : Multi-wavelength AlGaInN-LEDs, Collaborative Conference on Materials Research, 422, Jeju island, South Korea, Jun. 2017. |
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| 2. | Shiro Sakai : AlGaInN LEDs with a Temperature Gradient Method, BIT's 5th annual world congress of advanced materials-2016, 164, Chongqing, Jun. 2016. |
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| 3. | Shiro Sakai : InGaAlN Multi-wavelength LEDs, 2016 10th Int. Conf. on New Diamond and Nano Carbons, 180, Xi'an, May 2016. |
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| 4. | H. Fukunaga, Shiro Sakai, S. Noda, M. Kimura and Y. Muramoto : A Temperature Gradient Method Applied to Visible or Near-Ultraviolet InGaN/GaN LEDs, 6th International Symposium on Growth of III-Nitrides (ISGN-6), Tu-A49, Hamamatsu, Nov. 2015. |
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| 5. | Shiro Sakai : AlGaInN blue to UV LEDs and detectors, 2015 International Conference on Optoelectronics and Microelectronics, 2, Jul. 2015. |
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| 6. | Shiro Sakai : AlGaInN blue to UV LEDs and detectors, 2015 International Conference on Optoelectronics and Microelectronics, 2, Jul. 2015. |
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| 7. | H. Fukunaga, Shiro Sakai, S. Noda, M. Kimura and Y. Muramoto : A Temperature Gradient Method Applied to Visible or Near-Ultraviolet InGaN/GaN LEDs, 7th Asia-Pacific Workshop on Widegap Semiconductors, TTUP2-24, Seoul, May 2015. |
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| 8. | H. Fukunaga, M. Muguruma, Shiro Sakai, S. Nohda, M. Kimura and Y. Muramoto : A Temperature Gradient Method in InGaN/GaN LEDs Manufacturing, International Forum on Advanced Technologies, 20, Tokushima, Mar. 2015. |
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| 9. | Hiroshi Fukunaga, Shiro Sakai, Masataka Muguruma, S. Nohda, M. Kimura and Y. Muramoto : A Novel Method to Generate Different Wavelength of InGaN-LED in the Same Wafer, 10th International Symposium on Semiconductor Light Emitting Devices, Th-O63, Taiwan, Dec. 2014. |
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| 10. | Shiro Sakai : InGaAlN LED and C-related P-type Conductivity in AlGaN, 2014 International Symposium on Single Crystal Diamond Electronics (SCDE) and the Fourth Chinese Vacuum Forum (CVF), Xi'an, Jun. 2014. |
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| 11. | K. Yamazumi, D. Kim, M. Sekiguchi and Shiro Sakai : C-Related p-Type Conduction in AlGaN and AlN, LEDIA'14, 24p-LEDp6-7, Apr. 2014. |
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| 12. | SHUNSUKE NAKATA, Shiro Sakai and Heesub Lee : InGaN on Ta-GaN on sapphire substarte switched to the alternative Si wafer, 6th Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterals (ISPlasma2014), 06aP33, Nagoya, Mar. 2014. |
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| 13. | Yuya Ohnishi, Dohyung Kim and Shiro Sakai : Photo-induced Current in AlC/ Sapphire Grown by Metalorganic Chemical Vapor Deposition, 6th Int. Symp. on Control of Semiconductor Interfaces, P2-17, Fukuoka, Jul. 2013. |
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| 14. | Dohyung Kim, Heesub Lee, Kazuya Yamazumi, Yoshiki Naoi and Shiro Sakai : Fabrication of C-doped p-AlGaInN LED by the insertion of Al4C3, International Workshop on Nitride Semiconductor 2012, TuP-OD-1, Sapporo, Oct. 2012. |
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| 15. | Yun-Jeong Choi, Takunari Fujimoto, Fumiya Horie, Yoshiki Naoi and Shiro Sakai : Growth of Diamond like Carbon Film with Phosphorus Incorporation Using CVD Technique, The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, FrA2-2, Busan, May 2012. |
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| 16. | Dohyung Kim, Fumiya Horie, Yuya Ohnishi, Yoshiki Naoi and Shiro Sakai : Characteristics of Si and P-doped Al4C3 by Metalorganic Vapor Phase Epitaxy, The Sixteenth International Conference on Metal Organic Vapor Phase Epitaxy, TuP-71, Busan, May 2012. |
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| 17. | Shogo Wada, Fumiya Horie and Shiro Sakai : Optimum temperature to grow nano-AlC on sapphire by metalorganic chemical vapor deposition, 4th Int. Symp. on Advanced Plasma Science and its Application for Nitride and Nanomaterls, Mar. 2012. |
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| 18. | Y. Yoshida, K. Hara, Yoshiki Naoi and Shiro Sakai : MOCVD-GaN growth on separated GaN from sapphire using Tantalium, Asia-Pacific Workshop on Widegap Semiconductors, No.We-P47, 321-322, Toba( Mie, Japan), May 2011. |
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| 19. | Fumiya Horie, Yoshiki Naoi and Shiro Sakai : High Temperature Growth of AlxCy by Chemical Vapor Deposition, The 16th International Conference on Crystal Growth(ICCG-16), Beijing, Aug. 2010. |
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| 20. | Katsushi Nishino, Yuusuke Sawai, Yuji Nariyuki, Takeshi Noda, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : TEM Observation of Re-Grown GaN on Nano-Patterned GaN Template, The 37th International Symposium on Compound Semiconductors, FrP77, Takamatsu, Jun. 2010. |
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| 21. | Jing Zhang, Takumi Taoka, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : Front and Back Side Illumination of a Nano-Structured AlGaInN Photodetector, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, PB064C, Nagoya, Mar. 2010. |
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| 22. | Kohei Hara, Yoshiki Naoi and Shiro Sakai : Ta-etching of GaN by the Metalorganic Chemical Vapor Deposition-re-growth of GaN, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, PB055B, Nagoya, Mar. 2010. |
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| 23. | Koji Kawasaki, Seiji Kitamura, Yoshiki Naoi and Shiro Sakai : Growth of SiGeC Thin Film on Si Substrate by Metal Organic Chemical Vaoir Deposition, Fifth International Workshop on NEW GROUP IV SEMICONDUCTOR NANOELECTRONICS, P-09, Sendai, Jan. 2010. |
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| 24. | Yoshiki Naoi, Mitsuaki Tohno, Tianya Tan, Masakazu Matsmoto, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : GaN-bsed Light Emitting Diodes with Periodic Nano-structues on the Surface Fabricated by Nanoimprint Lithography Technique, The 8th International Conference on Nitride Semiconductors, ThP106, Cheju, Oct. 2009. |
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| 25. | Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : GaN Surface Nanostructure Photodetector Based on Back Side Incidence, The 8th International Conference on Nitride Semiconductors, TP145, Cheju, Oct. 2009. |
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| 26. | Yuji Nariyuki, Masakazu Matsmoto, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : Evaluation and Re-growth of GaN on Nano-patterned GaN on a Sapphire Substrate, The 8th International Conference on Nitride Semiconductors, TP113, Cheju, Oct. 2009. |
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| 27. | Takesi Noda, Yoshiki Naoi and Shiro Sakai : Crack Reduction of AlGaN on GaN/sapphire by Metalorganic Chemical Vapor Deposition, The 8th International Conference on Nitride Semiconductors, MP14, Cheju, Oct. 2009. |
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| 28. | Kohei Hara, Yoshiki Naoi and Shiro Sakai : GaN Re-growth Using Ta Mask by Metalorganic Chemical Vapor Deposition, The 8th International Conference on Nitride Semiconductors, MP9, Cheju, Oct. 2009. |
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| 29. | Jing Zang, S. Okuno, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano and Satoru Tanaka : The surface nanostructure photo-voltaic property of GaN-based photodetector, Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009), MO3-7, Zhangjiajie, May 2009. |
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| 30. | Ryo Matsuoka, Takashi Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate, Second International Symposium on Growth of III-Nitrides, MO-44, Izu, Jul. 2008. |
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| 31. | M Tohno, T Okimoto, Yoshiki Naoi, Katsushi Nishino, Shiro Sakai, T Kusuura, A Mitra, S Nouda, M Kimura, S Kawano and Y Muramoto : GaN-LED's on nano-etched sapphire substrate by metal organic chemical vapor deposition, The first International conference on White Light-Emitting Diodes(LEDs) and Solid State Lighting (SSL), Tokyo, Nov. 2007. |
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| 32. | T Okimoto, M Tsukihara, K Kataoka, A Kato, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : GaN- and AlGaN-based UV-LEDs on Sapphire by Metalorganic Chemical Vapor Deposition, The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Oct. 2007. |
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| 33. | K. Ikeda, R. Matsuoka, T. Hama, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, M. Koike and S.M. Lee : An a-GaN and an a-InGaN on r-Sapphire by Relatively High Temperature Metal organic Chemical Vapor Deposition, The 3rd Asia-Pacific Workshop on Widegap Semiconductors, Jeonju, Mar. 2007. |
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| 34. | Katsushi Nishino, A. Sakamoto and Shiro Sakai : Growth of Thick a-plane GaN on r-plane Sapphire by Direct Synthesis Method, International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006. |
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| 35. | Yoshiki Naoi, K. Ikeda, T. Hama, R.J. Choi, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee : Investigation of InGaN films on a-plane GaN grown by metal organic chemical vapor deposition technique, International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006. |
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| 36. | Yoshiki Naoi, K. Ono, K. Ikeda, R.J. Choi, T. Fukumoto, Katsushi Nishino, Shiro Sakai, M. Koike and S.M. Lee : Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate, International Workshop on Nitride Semiconductors 2006, Kyoto, Oct. 2006. |
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| 37. | M. Tsukihara, K. Sumiyoshi, T. Okimoto, K. Kataoka, S. Kawamichi, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Effect of middletemperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metal organic chemical vapor deposition, First International Symposium on Growth of III-Nitrides, Linkoping, Jun. 2006. |
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| 38. | S. Kawamichi, Katsushi Nishino, K. Sumiyoshi, M. Tsukihara and Shiro Sakai : Inversion domains in AlGaN films grown on patterned sapphire substrate, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006. |
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| 39. | K. Ikeda, R.J. Choi, T. Fukumoto, K. Ono, Yoshiki Naoi, Katsushi Nishino and Shiro Sakai : Visible light emitting diode using a-plane GaN on r-sapphire substrate with an InAlN buffer layer and a high temperature atomic layer epitaxy, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006. |
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| 40. | K. Sumiyoshi, M. Tsukihara, K. Kataoka, S. Kawamichi, T. Okimoto, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Al0.17Ga0.83N film with middle temperature intermediate layer grown on trenched sapphire substrate by MOCVD, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, May 2006. |
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| 41. | R.J. Choi, Shiro Sakai, Yoshiki Naoi, Katsushi Nishino, M. Koike and S.M. Lee : Efficient non-polar a-plane light-emitting-diodes grown using AlInNbuffer and intermediate layer, 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, May 2006. |
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| 42. | Y Sumiyoshi, Masashi Tsukihara, Ken Kataoka, Kiyoshi Okimoto, Shuichi Kawamichi, Yoshiki Naoi and Shiro Sakai : High-quality AlGaN film grown on the patterned sapphire substrate using a low-temperature intermediate layer by MOCVD, International COE Workshop on Nano Processes and Devices, and Their Applications, 75-76, Nagoya University, Dec. 2005. |
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| 43. | Kazuhide Sumiyoshi, Masashi Tsukihara, Fawang Yan and Shiro Sakai : AlGaN Films grown on trenched sapphire substrates using a low-temperature GaNP buffer layer by MOCVD, 6th international conference on nitride semiconductors, Tu-P-089, Bremen, Germany, Aug. 2005. |
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| 44. | Yoshiki Naoi, Akihiro Nakamura, Kodai Ono, Hisao Sato, H Yamamoto, M Mikura, Suguru Nouda and Shiro Sakai : Impurity induced disordering of p-type AlGaN-GaN Superlat-tice Structures, 6th International Conference on Nitride Semiconductors, Th-P-023, Bremen, Aug. 2005. |
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| 45. | Fawang Yan, Yoshiki Naoi, Masashi Tsukihara, Shuichi Kawamichi, Takayuki Yadani and Shiro Sakai : Diffusion Effect Induced InAsN Films Growth on GaAs(100) Substrates by MOCVD, The 23rd International Conference on Defects in Semiconductors (ICDS-23), TuP.79, Higashiura, Jul. 2005. |
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| 46. | Yoshiki Naoi, Hisao Sato, Hiroshi Yamamoto, Kodai Ono, Akihiro Nakamura, Masahiro Kimura, Suguru Nouda and Shiro Sakai : Growth and fabrication of AlGaInN-based UV-LEDs using SiN nano-mask, Proceedings of SPIE, Vol.5722, 417-422, San Jose, Apr. 2005. (DOI: 10.1117/12.601958, Elsevier: Scopus) |
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| 47. | Igor L Maksimov, Hong-Dong Li, Tomoya Sugahara, Masashi Tsukihara, Atsushi Mori and Shiro Sakai : Cracks and dislocation structures in AlGaN systems, Fifth International Conference on Nitride Semiconductor, Nara, May 2003. |
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| 48. | Kazunori Aoyama, Hongdong Li and Shiro Sakai : MOCVD Growth of InGaN with an Artificial Compostional Distribution, 5th International Conference on Nitride Semiconductors, Nara, May 2003. |
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| 49. | Masashi Tsukihara, Yoshiki Naoi, Hongdong Li, Tomoya Sugahara and Shiro Sakai : Cathodeluminescence and TEM Study of GaN Films Grown with GaNP Buffer Layer by MOCVD, 5th International Conference on Nitride Semiconductors, Nara, May 2003. |
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| 50. | Young-Bae Lee, Ryohei Takaki, Hisao Sato, Jin-Ping Ao, Yu-Huai Liu, Hong-dong Li, Yoshiki Naoi and Shiro Sakai : High Efficiency GaN Light-Emitting Diode with High Resistance P-Pad Region Using Plasma Surface Treatment, 5th International Conference on Nitride Semiconductors, Nara, May 2003. |
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| 51. | Masashi Tsukihara, Yoshiki Naoi, Yukio Ihara and Shiro Sakai : XPS Measurement of InNAs, 5th International Conference on Nitride Semiconductors, Nara, May 2003. |
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| 52. | Jin-Ping Ao, Naotaka Kubota, Hong-Xing Wang, Yu-Huai Liu, Yoshiki Naoi, Daigo Kikuta, Shiro Sakai and Yasuo Ohno : Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate, Proceeding of First Asia-Pacific Workshop on Widegap Semiconductors, 258-259, Awajishima, Mar. 2003. |
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| 53. | Jin-Ping Ao, Hisao Sato, Takashi Mizobuchi, Kenji Morioka, Shunsuke Kawano, Yoshihiko Muramoto, Young-Bae Lee, Yasuo Ohno and Shiro Sakai : Monolithic Blue LED Series Arrays for High-Voltage AC Operation, Abstracts of the International Workshop on Nitride Semiconductors 2002, Aachen, Jul. 2002. |
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| 54. | Shiro Sakai, Tao Wang, Hong X Wang, Jie Bai and Tomoya Sugahara : MOCVD growth of wide-bandgap nitride semiconductors, SPIE Photonic West, Critical Review on GaN and Related Materials, Vol.83, 47-76, San Jose, Jan. 2002. (Elsevier: Scopus) |
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| 55. | Sadanojo Nakajima, Daisuke Ikeda and Shiro Sakai : Electronic Structures of GaNP and InNAs Ordered Alloys Calculated by the Pseudopotential Method, Proceedings of International Workshop on Nitride Semiconductors, 441-443, Nagoya, Nov. 2000. |
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| 56. | Hong-Bo Sun, Saulius Juodkazis, Peter G Eliseev, Tomoya Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai and Hiroaki Misawa : Laser-induced Damage Threshold and Laser Processing of GaN, Proceedings of SPIE, Vol.3885, 311-322, Osaka, Nov. 1999. |
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| 57. | Tomoya Sugahara, Tao Wang, Maosheng Hao, Daisuke Nakagawa, Yoshiki Naoi and Shiro Sakai : Phase Separation Mechanism around Dislocation in an InGaN/GaN Quantum Well Structure, Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, Vol.xxvi+892, 645-650, Nara, Jan. 1999. |
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| 58. | Maosheng Hao, Sourindra Mahanty, Y Morishima, Hironori Takenaka, Jie Wang, Satoru Tottori, Masaaki Nozaki, Yasuhiro Ishikawa, Tomoya Sugahara, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Stacking Fault and Its Effect on the GaN Epitaxial Growth, Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors, Vol.xxvi+892, 675-680, Nara, Jan. 1999. |
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| 59. | Marek Osinski, P.G. Eliseev, P. Perlin, Jinhyun Lee, Hisao Sato, Tomoya Sugahara, Yoshiki Naoi and Shiro Sakai : Anomalous Temperature Behaviour and Band Tailing in InGaN/GaN Heterostructures Grown on Sapphire by MOCVD, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition., Vol.6, 276-277, Oct. 1998. |
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| 60. | Maosheng Hao, Tomoya Sugahara, Satoru Tottori, Masaaki Nozaki, Satoshi Kurai, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Correlation between Dislocations and Luminescence in GaN, Proceedings of SPIE, Vol.3419, 138-145, Taipei, Jul. 1998. |
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| 61. | Shiro Sakai, Masuo Fukui and Osamu Tada : Studies on acoustic domain and electric domain in CdS, The 6th International Conference on Internal Fruction and Ultrasonic Attenuation in Solids, Tokyo, Jul. 1977. |
| 1. | 川西 洋平, 酒井 士郎 : MOCVDを用いた，GeドープAlGaNの成長, 第77回 応用物理学会秋季学術講演会 講演予稿集, 16a-P5-26, 2016年9月. |
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| 2. | 平田 朋也, 酒井 士郎, 納田 卓, 木村 真大, 村本 宜彦 : 中間板を用いたMOCVD-InGaN/GaN 四波長LED, 第77回 応用物理学会秋季学術講演会 講演予稿集, 14a-A21-2, 2016年9月. |
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| 3. | 川西 洋平, 酒井 士郎 : MOCVDを用いたGaN/SapphireへのGeドーピング, 電気関係学会四国支部合同学術講演会, 2015年9月. |
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| 4. | 六車 正哉, 酒井 士郎, 納田 卓, 木村 真大, 村本 宜彦 : トンネル接合を用いたInGaN/GaN 多波長LED, 2015年度応用物理・物理系学会中国四国支部合同学術講演会, 16, 2015年8月. |
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| 5. | 川本 祐介, 酒井 士郎 : 陽極酸化によるAlGaInN-LEDの光取り出し効率の向上, 電子情報通信学会ソサイエティ大会講演論文集, c-4-33, 2014年9月. |
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| 6. | 堰口 正啓, 金 度亨, 沖 竜二, 酒井 士郎 : AlC拡散によるAlGaN表面の変化, 電気関係学会四国支部連合大会講演論文集, 11-1, 2014年9月. |
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| 7. | 福永 寛, 酒井 士郎 : 基板の裏面を加工及び追加したInGaN系LED, 電気関係学会四国支部連合大会, 11-2, 2014年9月. |
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| 8. | 沖 竜二, 金 度享, 川本 祐嗣, 酒井 士郎 : Mg:AlC における光誘起電流, 平成25年度 電気関係学会四国支部連合大会, 11-4, 2013年9月. |
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| 9. | 中田 駿介, 李 熙燮, 酒井 士郎 : Ta(タンタル)を用いたGaN(窒化ガリウム)の剥離およびマスクの検討, 平成25年度 電気関係学会四国支部連合大会, 11-6, 2013年9月. |
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| 10. | 金 度亨, 沖 竜二, 酒井 士郎 : Al4C3/Al2O3 (0001)の光誘起電流(PIC)の特性, 第74回応用物理学会秋季学術講演会 講演予稿集, 17p-P9-2, 2013年9月. |
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| 11. | 金 度亨, 李 熙燮, 山住 和也, 西野 克志, 酒井 士郎 : 炭素(C)ドープAlGaN のP 型化のメカニズム, 第60 回応用物理学会春季学術講演会 講演予稿集, 28p-PA1-29, 2013年3月. |
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| 12. | 李 熙燮, 金 度亨, 山住 和也, 酒井 士郎 : AlCによるAlGaNへのp型ドーピング, 第73回応用物理学会学術講演会, 12p-H9-16, 2012年9月. |
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| 13. | 金 度亨, 李 熙燮, 山住 和也, 直井 美貴, 酒井 士郎 : AlxCy によるAlXGa1-xN 中への拡散, 第73回応用物理学会学術講演会, 12p-H9-15, 2012年9月. |
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| 14. | Yuya Ohnishi, Dohyung Kim and Shiro Sakai : Growth of AlC on sapphire, Silicon and SiC substrates, 第31回電子材料シンポジウム, We2-5, Jul. 2012. |
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| 15. | Choi Yun Jeong, 藤本 拓生, 堀江 郁哉, 直井 美貴, 酒井 士郎 : Study of phosphorus incorporated DLC films grown by CVD technique, 第59回応用物理学関係連合講演会, GP5, 2012年3月. |
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| 16. | 大西 裕也, 堀江 郁哉, 酒井 士郎 : MOCVD法によるSi,Ga,P添加Al4C3薄膜の成長, 第59回応用物理学会関係連合講演会, 2012年3月. |
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| 17. | 大西 裕也, 堀江 郁哉, 酒井 士郎 : MOCVD法によるsapphire上への(Si)(Ga)AlC(P)薄膜の成長, 電子情報通信学会技術研究報告 電子デバイス, Vol.111, No.290, 117-120, 2011年11月. |
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| 18. | 谷本 勝, 酒井 士郎 : SiO2マスクを用いたMOCVD-GaNの転位密度低減に関する研究, 電子情報通信学会技術研究報告 電子デバイス, Vol.111, No.290, 15-18, 2011年11月. |
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| 19. | F. Horie, Y. Ohnishi, Y. Naoi, 酒井 士郎 : Heterostructure Formation on AlC/Sapphire Substrate, 30th Electronic Materials Symposium, Th2-16, 2011年6月. |
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| 20. | 加藤 保洋, 中内 潤, 西野 克志, 月原 政志, 酒井 士郎 : 昇華法によるバルクAlNの成長, 電気関係学会四国支部連合大会講演論文集, 11-3, 2010年9月. |
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| 21. | 和田 祥吾, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : 金属マスクを施したサファイア表面周期構造へのGaN成長と評価, 平成22年度電気関係学会四国支部連合大会, 11-18, 2010年9月. |
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| 22. | 楠 貴大, 沼島 明菜, 直井 美貴, 酒井 士郎 : ナノ微粒子技術を用いたGaN表面周期構造の作製, 平成22年度電気関係学会四国支部連合大会, 11-17, 2010年9月. |
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| 23. | 松本 将和, 福田 弘之, 直井 美貴, 酒井 士郎 : GaN系UV-LEDの偏光特性, 平成22年度電気関係学会四国支部連合大会, 11-14, 2010年9月. |
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| 24. | 川崎 晃一, 直井 美貴, 酒井 士郎 : MOCVD法によるSiおよびサファイア上へのGeC薄膜の成長, 平成22年度電気関係学会四国支部連合大会, 11-2, 2010年9月. |
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| 25. | 堀江 郁哉, 直井 美貴, 酒井 士郎 : MOCVD法によるAlC薄膜の成長, 第71回応用物理学会学術講演会, 16a-ZT-11, 2010年9月. |
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| 26. | 原 航平, 直井 美貴, 酒井 士郎 : Taマスクを用いたMOCVD再成長GaNの表面モフォロジー改善, 第71回応用物理学会学術講演会, 15p-C-8, 2010年9月. |
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| 27. | 西野 克志, 澤井 佑介, 成行 祐児, 野田 丈嗣, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : ナノ加工GaN基板上再成長層のTEM観察, 第57回応用物理学関係連合講演会, 19a-TB2, 2010年3月. |
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| 28. | 直井 美貴, 松本 将和, 譚 天亜, 酒井 士郎, 深野 敦之, 田中 覚 : 表面ナノ周期構造を有するInGaN-LEDからの輻射光空間分布特性, 第70回応用物理学会学術講演会, 11a-X-8, 2009年9月. |
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| 29. | 野田 丈嗣, 直井 美貴, 酒井 士郎 : MOCVD-GaN on Sapphire上AlGaNのクラックの低減に関する研究(2), 第70回応用物理学会学術講演会, 11a-E-10, 2009年9月. |
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| 30. | 原 航平, 直井 美貴, 酒井 士郎 : Taマスクを用いた下地層エッチングによるGaN再成長, 第70回応用物理学会学術講演会, 11a-E-9, 2009年9月. |
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| 31. | 張 晶, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : 裏面入射GaN系表面ナノ構造光検出器, 第70回応用物理学会学術講演会, 10a-E-9, 2009年9月. |
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| 32. | 成行 祐児, 松本 将和, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : ナノ加工を施したGaN上への再成長及びその評価, 第70回応用物理学会学術講演会, 8p-F-2, 2009年9月. |
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| 33. | 遠野 充明, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : ナノインプリント技術により周期的ナノ構造を形成したGaN系光デバイスからのEL特性, 第56回応用物理学関係連合講演会, 1p-ZJ-11, 2009年4月. |
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| 34. | 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚, 納田 卓, 木村 真大, 川野 俊輔, 村本 宜彦 : サファイア上周期的ナノ構造を形成するためのナノインプリント技術開発とGaN系LED, 第56回応用物理学関係連合講演会, 1p-ZJ-10, 2009年4月. |
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| 35. | 張 晶, 遠野 充明, 奥野 誠亮, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : GaNナノ加工pnダイオード光検出器, 第56回応用物理学関係連合講演会, 1a-ZJ-30, 2009年4月. |
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| 36. | 野田 丈嗣, 松岡 遼, 直井 美貴, 酒井 士郎 : MOCVD-GaN on Sapphire上AlGaNのクラックの低減に関する研究, 第56回応用物理学関係連合講演会, 1a-ZJ-14, 2009年4月. |
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| 37. | 北村 政治, 川崎 晃一, 吉田 博紀, 直井 美貴, 酒井 士郎 : MOCVD法によるSi基板上へのSi1-x-yGexCy薄膜の成長, 第56回応用物理学関係連合講演会, 30p-E-6, 2009年3月. |
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| 38. | 成行 祐児, 松本 将和, 遠野 充明, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : ナノ加工を用いたGaNのC-V特性, 第56回応用物理学関係連合講演会, 30p-ZJ-3, 2009年3月. |
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| 39. | 南部 紗織, 直井 美貴, 酒井 士郎 : 表面プラズモンポラリトンによる半導体LED の出力改善に関する検討, 平成20年度電気関係学会四国支部連合大会, 11-4, 2008年9月. |
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| 40. | 遠野 充明, 直井 美貴, 酒井 士郎, 和地 順蔵 : ナノインプリント技術によるサファイア基板上へのナノ構造の形成, 平成20年度電気関係学会四国支部連合大会, 11-3, 2008年9月. |
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| 41. | 結城 勇介, 西野 克志, 直井 美貴, 酒井 士郎 : 直接合成法を用いたa 面GaN 結晶成長のためのNH3 流量の検討, 平成20年度電気関係学会四国支部連合大会, 11-2, 2008年9月. |
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| 42. | 加藤 篤, 西野 克志, 直井 美貴, 酒井 士郎 : SiO2 を斜め蒸着した凹凸GaN テンプレート上へのGaN成長, 平成20年度電気関係学会四国支部連合大会, 11-1, 2008年9月. |
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| 43. | 松岡 遼, 西野 克志, 直井 美貴, 酒井 士郎 : ストライプ状金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長, 2008年(平成20年)秋季第69回応用物理学会学術講演会, 2a-CA-8, 2008年9月. |
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| 44. | 松岡 遼, 沖本 聖, 西野 克志, 直井 美貴, 酒井 士郎 : 金属蒸着膜を使ったAlGaN on GaN/Sapphireの選択MOCVD成長, 2008年(平成20年)春季第55回応用物理学会連合講演会, 29p-B-18, 2008年3月. |
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| 45. | 沖本 聖, 遠野 充明, 南部 紗織, 北村 政治, 月原 政志, 片岡 研, 西野 克志, 直井 美貴, 酒井 士郎 : AlGaN系紫外発光ダイオードの光出力に及ぼす電極形状の影響に関する研究, 電気関係学会四国支部連合大会講演論文集, Vol.11-29, 2007年9月. |
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| 46. | 南部 紗織, 直井 美貴, 酒井 士郎 : AlGaN系紫外LEDのエレクトロルミネッセンスの温度特性, 電気関係学会四国支部連合大会講演論文集, Vol.11-11, 2007年9月. |
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| 47. | 仁木 貴敏, 片岡 研, 月原 政志, 西野 克志, 直井 美貴, 酒井 士郎 : MOCVD成長AlGaNのMgドーピングによる結晶性への影響, 電気関係学会四国支部連合大会講演論文集, Vol.11-22, 2007年9月. |
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| 48. | 松岡 遼, 池田 賢司, 西野 克志, 直井 美貴, 酒井 士郎 : オフ角r面サファイア基板上にMOCVD法によるa面GaNのX線回折による評価, 電気関係学会四国支部連合大会講演論文集, Vol.11-14, 2007年9月. |
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| 49. | 加藤 篤, 月原 政志, 片岡 研, 西野 克志, 直井 美貴, 酒井 士郎 : UV-LED用高Al組成AlGaN結晶の高品質化に関する研究, 電気関係学会四国支部連合大会講演論文集, Vol.11-11, 2007年9月. |
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| 50. | 遠野 充明, 沖本 聖, 加藤 篤, 西野 克志, 直井 美貴, 酒井 士郎, 楠浦 崇央, ミトラ アヌパム : ナノ・エッチングしたサファイア上へのGaNのMOCVD成長, 第68回応用物理学会学術講演会, 2007年9月. |
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| 51. | 松岡 遼, 池田 賢司, 濱 敬重, 西野 克志, 直井 美貴, 酒井 士郎, Rakjun Choi, S.M. Lee, 小池 正好 : MOCVDにより直接高温成長した高品質a面GaN・InGaN結晶成長, 第54回応用物理学会学術講演会, 2007年3月. |
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| 52. | 濱 敬重, 小野 耕大, 池田 賢司, Rakjun Choi, 西野 克志, 直井 美貴, 酒井 士郎, S.M. Lee, 小池 正好 : a面バルクGaNおよびr面サファイア上a面GaNに作製した青色発光ダイオード, 第67回応用物理学会学術講演会, 2006年9月. |
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| 53. | 片岡 研, 沖本 聖, 仁木 貴敏, 住吉 和英, 月原 政志, 西野 克志, 直井 美貴, 酒井 士郎 : SiNを用いたAlInGaN系紫外LED高出力化の検討, 第67回応用物理学会学術講演会, 2006年9月. |
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| 54. | 池田 賢司, Rakjun Choi, 福本 哲也, 西野 克志, 直井 美貴, 酒井 士郎, 小池 正好, S.M. Lee : a面成長InGaN/GaN LEDにおけるInGaN活性層の解析, 第67回応用物理学会学術講演会, 2006年8月. |
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| 55. | 西野 克志, 宮村 高史, 酒井 士郎 : TMA添加直接合成法によるバルクAlGaNの結晶成長, 第67回応用物理学会学術講演会, 2006年8月. |
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| 56. | 西野 克志, 坂本 旭, 酒井 士郎 : 直接合成法によるr面サファイア上へのバルクa-GaN成長, 第67回応用物理学会学術講演会, 2006年8月. |
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| 57. | 仁木 貴敏, 月原 政志, 沖本 聖, 住吉 和英, 片岡 研, 西野 克志, 直井 美貴, 酒井 士郎 : 中間温度成長AlGaN層と多重量子井戸(MQW)層によるMOCVD成長AlGaN中の転位低減, 応用物理学会中国四国支部，日本物理学会中国支部・四国支部，日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 144, 2006年7月. |
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| 58. | 住吉 和英, 月原 政志, 片岡 研, 沖本 聖, 直井 美貴, 酒井 士郎 : 低温中間層による凸凹サファイア基板上Al0.17Ga0.83NのMOCVD, 応用物理学会中国四国支部，日本物理学会中国支部・四国支部，日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 143, 2006年7月. |
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| 59. | 沖本 聖, 月原 政志, 住吉 和英, 片岡 研, 西野 克志, 直井 美貴, 酒井 士郎, 酒井 士郎 : 低温成長層の導入によるAlGaNの高品質化, 応用物理学会中国四国支部，日本物理学会中国支部・四国支部，日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 142, 2006年7月. |
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| 60. | 濱 敬重, 南部 紗織, 沖本 聖, 月原 政志, 片岡 研, 住吉 和英, 直井 美貴, 酒井 士郎 : 高Al組成窒化物系UV-LED用Ni/Au系透明電極の解析, 応用物理学会中国四国支部，日本物理学会中国支部・四国支部，日本物理教育学会四国連絡会議2006年度支部学術講演会講演予稿集, 137, 2006年7月. |
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| 61. | 池田 賢司, Choi Rak-Jun, 福本 哲也, 西野 克志, 直井 美貴, 酒井 士郎, Lee Min Soo, 小池 正好 : AlInN-buffer層上のALEによるa面GaNの高品質化, 第53回応用物理学会学術振興会講演予稿集, Vol.26, 401, 2006年3月. |
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| 62. | 河道 修一, 西野 克志, 住吉 和英, 月原 政志, 酒井 士郎 : 凹凸サファイア基板上に成長させたAlGaN薄膜の反転ドメイン, 第53回応用物理学会学術振興会講演予稿集, Vol.25, 379, 2006年3月. |
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| 63. | 住吉 和英, 月原 政志, 沖本 聖, 河道 修一, 西野 克志, 直井 美貴, 酒井 士郎 : 低温中間層を用いた加工サファイア基板上のAl0.17Ga0.83N MOCVD成長, 第53回応用物理学会学術振興会講演予稿集, Vol.25, 378, 2006年3月. |
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| 64. | 山本 真美子, 月原 政志, 西野 克志, 直井 美貴, 酒井 士郎 : フラックス成長BP結晶上へのGaN成長, 第53回応用物理学会学術振興会講演予稿集, Vol.22, 346, 2006年3月. |
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| 65. | 住吉 和英, 酒井 士郎, 直井 美貴, 西野 克志 : 窒化物半導体と紫外発光デバイス, 第7回IEEE広島支部学生シンポジウム(HISS), 2005年11月. |
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| 66. | 沖本 聖, 月原 政志, 住吉 和英, 直井 美貴, 酒井 士郎 : AlGaN-MOCVD成長における GaNPバッファ層の効果, 電気関係学会四国支部連合大会, 149, 2005年9月. |
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| 67. | 河道 修一, 住吉 和英, 月原 政志, 西野 克志, 直井 美貴, 酒井 士郎 : 加工サファイア上に成長したAl0.07Ga0.93N薄膜の透過型電子顕微鏡による評価, 電気関係学会四国支部連合大会, 150, 2005年9月. |
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| 68. | 山本 真美子, 西野 克志, 直井 美貴, 酒井 士郎 : フラックス法によるBP結晶成長, 電気関係学会四国支部連合大会, 151, 2005年9月. |
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| 69. | 閻 発旺, 住吉 和英, 月原 政志, 直井 美貴, 酒井 士郎 : MOCVD法によるサファイア基板上へのSb添加AlNの成長, 第66回応用物理学会学術振興会講演予稿集, 269, 2005年9月. |
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| 70. | 住吉 和英, 月原 政志, 河道 修一, 直井 美貴, 酒井 士郎 : 低温GaNPバッファー層を用いた加工サファイア基板上のAlGaN MOCVD成長, 第66回応用物理学会学術振興会講演予稿集, 269, 2005年9月. |
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| 71. | 直井 美貴, 中村 晃啓, 小野 耕大, 酒井 士郎, 木村 真大, 納田 卓 : p-AlGaN/GaN 超格子構造における不純物ドーピングによる混晶化, 第66回応用物理学会学術振興会講演予稿集, 279, 2005年9月. |
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| 72. | 月原 政志, 住吉 和英, 閻 発旺, 直井 美貴, 酒井 士郎 : 高品質AlGaNへ向けての低温成長AlGaN層の検討, 第66回応用物理学会学術振興会講演予稿集, 274, 2005年9月. |
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| 73. | Jin-Ping Ao, Kubota Naotaka, Wang Hong-Xing, Liu Yu-Huai, Kikuta Daigo, Yoshiki Naoi, Shiro Sakai and Yasuo Ohno : Thermal Stability of Copper Schottky Contact on AlGaN/GaN and n-GaN, 第50回応用物理学関係連合講演会, Mar. 2003. |
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| 74. | 久保田 尚孝, 敖 金平, 王 宏興, 劉 玉懐, 菊田 大悟, 直井 美貴, 酒井 士郎, 大野 泰夫 : n-GaN上のCu及びNi/Auショットキーコンタクトの比較, 第50回応用物理学関係連合講演会, 2003年3月. |
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| 75. | 中島 貞之丞, 池田 大輔, 岡 賢治, 酒井 士郎 : 六方晶系 GaNAs 規則合金のバンド構造の解析, 電子情報通信学会総合大会, 14, 2002年3月. |
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| 76. | Jin-Ping Ao, Wang Tao, Kikuta Daigo, Liu Yu-Huai, Shiro Sakai and Yasuo Ohno : AlGaN/GaN HEMT with Thin Buffer Layer on Sapphire Substrate, 応用物理学会講演会, Mar. 2002. |
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| 77. | 池田 大輔, 中島 貞之丞, 酒井 士郎 : 擬ポテンシャル法による GaNP，InNAs 規則合金の電子構造の解析, 電気関係学会四国支部連合大会講演論文集, 24, 2000年10月. |
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| 78. | 日下 一也, 満村 宏典, 古谷 公平, 英 崇夫, 酒井 士郎 : 単結晶GaN薄膜の残留応力測定, 第36回 X線材料強度に関するシンポジウム講演論文集, 291-295, 2000年9月. |
| 1. | 楠 貴大, 沼島 明菜, 直井 美貴, 酒井 士郎 : ナノ微粒子技術を用いたGaN表面周期構造の作製と高性能LED作製への応用検討, LED総合フォーラム, 103-104, 2011年6月. |
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| 2. | 松本 将和, 福田 弘之, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : 表面・界面に周期構造を有するGaN系LEDの配向特性評価, LED総合フォーラム, 69, 2010年4月. |
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| 3. | Y.J. Choi, Yoshiki Naoi, Kohei Hara, Masakzu Matsumoto, Shiro Sakai and S.N. Yi : GaN nanorod fabrication by reactive ion etching and nanoimprint lithography technique, Proceedings of the fourth symposium on "The Fourth International Symposium:Development of the Global Doble Degree Program(GDPP)", 54, Dec. 2009. |
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| 4. | 張 晶, 直井 美貴, 酒井 士郎, 深野 敦之, 田中 覚 : GaN系表面ナノ構造光検出器, 電子情報通信学会電子デバイス研究会, Vol.109, No.288, 83-87, 2009年11月. |
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| 5. | 原 航平, 直井 美貴, 酒井 士郎 : Taマスクを用いた下地層エッチングによるGaN再成長, 電子情報通信学会電子デバイス研究会, Vol.109, No.288, 1-4, 2009年11月. |
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| 6. | 遠野 充明, 張 晶, 直井 美貴, 酒井 士郎, 和地 順蔵 : ナノインプリント技術により周期的微細構造を施したGaN系デバイスからの電流注入発光特性, 電子情報通信学会電子デバイス研究会, Vol.ED2008-158, 2008年11月. |
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| 7. | 遠野 充明, 沖本 聖, 直井 美貴, 西野 克志, 酒井 士郎, 楠浦 崇央, ミトラ アムパム, 納田 卓, 木村 真大, 川野 俊輔, 村本 宣彦 : ナノ微細加工サファイア基板上へのGaN系発光ダイオードの作製, 第1回フロンティア研究センターシンポジウム, Vol.P3, 2007年12月. |
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| 8. | 松岡 遼, 池田 賢司, 西野 克志, 直井 美貴, 酒井 士郎 : オフ角r面サファイア上MOCVD成長a面GaNのX線回折評価, 第1回フロンティア研究センターシンポジウム, Vol.P2, 2007年12月. |
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| 9. | 北村 政治, 沖本 聖, 遠野 充明, 南部 紗織, 西野 克志, 直井 美貴, 酒井 士郎 : 340nm帯ナイトライド系 UV-LEDの自己発熱と電流集中効果による発光特性への影響, 第1回フロンティア研究センターシンポジウム, Vol.P1, 2007年12月. |
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| 10. | K Kataoka, M Tsukihara, T Niki, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : The segragation and saturation phenomena of Mg concentration in AlGaN, 26th Electronic Materials Symposium (EMS-26), Vol.H7, Jul. 2007. |
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| 11. | R Matsuoka, K Ikeda, Katsushi Nishino, Yoshiki Naoi and Shiro Sakai : Chracterization of a-plane MOCVD-grown GaN on off-angle r-plane sapphire substrates, 26th Electronic Materials Symposium (EMS-26), Vol.E12, Jul. 2007. |
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| 12. | 酒井 士郎, 福井 萬壽夫, 入谷 忠光, 多田 修 : 単一キャパシティブプローブによるCdS中の電界分布の新しい測定法, 電子通信学会半導体トランジスタ研究会, Vol.SSD 77-1, 1977年4月. |
| 1. | 酒井 士郎 : InGaN系化合物半導体発光装置の製造方法及び波長調整方法, 特願2014-166047 (2014年8月), . | |
| 2. | 酒井 士郎 : ナノパターンを有するレーザーダイオード及びその製造方法, 特願2008-188715 (2008年7月), 特許第5383109号 (2013年10月). | |
| 3. | 酒井 士郎, 直井 美貴 : 発光ダイオードおよびその製造方法, 特願2010-509270 (2008年5月), 特許第5384481号 (2013年10月). | |
| 4. | Shiro Sakai, Yoshiki Naoi and チョイ ラクジュン : method of growing non-polar a-plane gallium nitride, 2006-077492 (Mar. 2006), . | |
| 5. | 酒井 士郎, 直井 美貴, チョイ ラクジュン, リー スンミン, 小池 正好 : 非極性a面窒化ガリウム単結晶の製造方法, 特願2006-47294 (2006年2月), . | |
| 6. | 酒井 士郎, 住吉 和英, 月原 政志, 片岡 研 : 半導体装置用基材およびその製造方法, 特願2005-359877 (2005年12月), . | |
| 7. | 酒井 士郎, 住吉 和英, 月原 政志, 片岡 研 : 半導体装置用基材および製造方法, 特願2005-359876 (2005年12月), . | |
| 8. | 酒井 士郎, チョイ ラクジュン : III族窒化物半導体薄膜およびその製造方法並びにIII族窒化物半導体発光素子, 特願2005-250185 (2005年8月), . | |
| 9. | 酒井 士郎 : 交流電源用発光装置, 特願2005-190406 (2005年6月), . | |
| 10. | 酒井 士郎, 直井 美貴, チョイ ラクジュン : 無極性a面窒化ガリウム単結晶の製造方法, 特願2005-25184 (2005年3月), . | |
| 11. | 酒井 士郎, イーヴ ラクロワ : 窒化ガリウム系発光素子(329-26), 特願2001-206718 (2001年7月), . | |
| 12. | 酒井 士郎 : 窒化ガリウム系発光素子(329-25), 特願2001-198305 (2001年6月), . | |
| 13. | 酒井 士郎, タオ ワン : 窒化ガリウム系化合物半導体の製造方法(329-24), 特願2001-198304 (2001年6月), . | |
| 14. | 酒井 士郎 : 窒化ガリウム系化合物半導体の製造方法(329-23), 特願2001−194060 (2001年6月), . | |
| 15. | 酒井 士郎, イーヴ ラクロワ : 窒化物系半導体装置及びその製造方法(329-22), 特願2001-3910 (2001年3月), . | |
| 16. | 酒井 士郎, タオ ワン : 窒化ガリウム系半導体層の形成方法(329-21), 特願2001-62503 (2001年3月), . | |
| 17. | 酒井 士郎, イーヴ ラクロワ : 窒化物系半導体装置及びその製造方法(329-20), 特願2001-3910 (2001年1月), . | |
| 18. | 酒井 士郎 : 窒化ガリウム層の製造方法(329-18), 特願2000-378471 (2000年12月), . | |
| 19. | 酒井 士郎 : 窒化ガリウム層の製造方法(329-17), 特願2000-404170 (2000年12月), . | |
| 20. | 酒井 士郎 : 窒化ガリウム系化合物半導体装置(329-16), 特願2000-358412 (2000年11月), . | |
| 21. | 酒井 士郎, 高松 勇吉, 森 勇次, 直井 弘之, ワン ホンシン, 石濱 義康, 網島 豊 : 気相成長装置及び気相成長方法(JP15), 特願2000-301644 (2000年10月), . | |
| 22. | 酒井 士郎 : 発光素子(329-12), 特願2000-293976 (2000年9月), . | |
| 23. | 酒井 士郎, イーヴ ラクロワ : 窒化ガリウム系化合物半導体素子及び電極形成方法(329-14), 特願2000-289104 (2000年9月), . | |
| 24. | 酒井 士郎, イーヴ ラクロワ : 半導体の表面を荒くする方法(329-13), 特願2000-289103 (2000年9月), . | |
| 25. | 酒井 士郎, タオ ワン : 発光素子(329-15), 特願2000-275384 (2000年9月), . | |
| 26. | 酒井 士郎 : 窒化ガリウム系化合物半導体の製造方法(329-9), 特願2000-228320 (2000年7月), . | |
| 27. | 酒井 士郎 : 窒化ガリウム系化合物半導体の製造方法(329-11), 特願2000-227273 (2000年7月), . | |
| 28. | 酒井 士郎 : 窒化ガリウム系化合物半導体素子及び電極形成方法(329-10), 特願2000-227272 (2000年7月), . | |
| 29. | 酒井 士郎 : 発光素子(329-8), 特願2000-213303 (2000年7月), . | |
| 30. | 酒井 士郎, タオ ワン : 窒化ガリウム系化合物半導体の製造方法(329-7), 特願2000-227963 (2000年6月), 特許第3274676号 (2002年2月). | |
| 31. | 酒井 士郎 : 窒化ガリウム系化合物半導体の製造方法(329-6), 特願2000-164349 (2000年6月), 特許第3285341号 (2002年3月). | |
| 32. | 酒井 士郎 : 窒化ガリウム系化合物半導体の製造方法(329-5), 特願2000-143826 (2000年5月), 特許第3274674号 (2002年2月). | |
| 33. | 酒井 士郎 : 気相成長装置及び方法(329-4), 特願2000-100907 (2000年4月), . | |
| 34. | 酒井 士郎 : 気相成長装置及び気相成長方法(RCT002), 特願2000-62899 (2000年3月), . | |
| 35. | 酒井 士郎 : GaN系化合物半導体及び発光素子の製造方法(329-3), 特願2000-12080 (2000年1月), . | |
| 36. | 酒井 士郎, タオ ワン : 窒化ガリウム系化合物半導体の製造方法(329-1), 特願11-376842 (1999年12月), . |