Tokushima University / Educator and Researcher Directory --- Kawakami, Retsuo

Personal Web Page

https://researchmap.jp/read0191786 (researchmap)

Field of Study

○	半導体/プラズマエレクトロニクス

Subject of Study

○	半導体プラズマ粒子と発光のシナジー効果によるGaNエッチングダメージの解明, DBDプラズマ/プラズマJETのグリーンテクノロジーへの応用, 薄膜系光触媒の反応活性化のための表面処理テクノロジー, LED光触媒反応を応用した鮮度維持テクノロジー, 半導体プラズマ表面反応のモデリング, ワイドギャップ半導体のプラズマエッチングダメージ解析 (semiconductor, 非平衡プラズマ, 窒化物半導体, 薄膜系光触媒, LED, JETプラズマ, DBDプラズマ, バイオ, シナジー効果, 食品, ワイドギャップ半導体)

Book / Paper

Book:

1.	Retsuo Kawakami : 光触媒効果の実習とワークショップ, 徳島大学人と地域共創センター, Tokyo, Oct. 2022.
2.	Retsuo Kawakami : 光触媒材料と光触媒効果, 徳島大学人と地域共創センター, Tokyo, Oct. 2022.
3.	Retsuo Kawakami and Akihiro Shirai : 第7章第3節第2項「LEDと光触媒」, NTS Inc., Tokyo, Dec. 2019.

Academic Paper (Judged Full Paper):

1.	Retsuo Kawakami, Yuta Makino, Shin-ichiro Yanagiya, Akihiro Shirai, Masahito Niibe and Yoshitaka Nakano : Plasma-Assisted Annealing of Pt-Doped Rutile TiO2 Nanoparticles for Enhanced Decomposition and Bacterial Inactivation under General Lighting, Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : JVST B, Vol.42, 012203:1-012203:12, 2024. (Tokushima University Institutional Repository) ● Metadata: 118889 (Link to Publication Site) ● Publication site (DOI): 10.1116/6.0003101 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1116/6.0003101 (Tokushima University Institutional Repository: 118889, DOI: 10.1116/6.0003101)
2.	Retsuo Kawakami, Yuki Takao, Akihiro Shirai and Takashi Mukai : Remote Bactericidal Effect of Anatase TiO₂ Photocatalytic Nanoparticles Annealed with Low-Temperature O₂ Plasma, Biocontrol Science, Vol.27, No.4, 217-222, 2022. (Summary) The remote bactericidal effect of TiO photocatalyst, i.e., the bactericidal effect away from the photocatalyst, was successfully achieved using a humidified airflow. The TiO photocatalyst used was anatase-type TiO nanoparticles (NPs) annealed with a low-temperature O plasma. For comparison, anatase-type TiO NPs annealed in the air were used. The bacteria, Bacillus subtilis, were placed away from the TiO NPs. The plasma-assisted-annealed TiO NPs significantly inactivated 99% of the bacterial cells in 5 h, whereas the pristine and air-annealed TiO NPs inactivated 88-90% of the bacterial cells. The remote bactericidal effect of plasmaassisted-annealed TiO NPs would be attributed to a larger amount of HO molecules traveled by the airflow from the TiO NPs. The molecules were generated by chemically reacting more photoexcited carriers on the TiO surface with HO and O in the airflow. These photoexcited carriers originated from more oxygen-based species adsorbed and more oxygen vacancies introduced on the TiO surface by the plasma-assisted-annealing. (Keyword) Hydrogen Peroxide / Temperature / Nanoparticles / Oxygen / Anti-Bacterial Agents (Tokushima University Institutional Repository) ● Metadata: 117872 (Link to Publication Site) ● Publication site (DOI): 10.4265/bio.27.217 (Link to Search Site for Scientific Articles) ● PubMed @ National Institutes of Health, US National Library of Medicine (PMID): 36567118 ● Search Scopus @ Elsevier (PMID): 36567118 ● Search Scopus @ Elsevier (DOI): 10.4265/bio.27.217 (Tokushima University Institutional Repository: 117872, DOI: 10.4265/bio.27.217, PubMed: 36567118)
3.	Retsuo Kawakami, Mutsumi Aihara, Takuto Izumi, Akihiro Shirai and Mukai Takashi : Bactericidal Effects of Low-Temperature Atmospheric-Pressure Air Plasma Jets with No Damage to Plant Nutrient Solutions, Biochemical Engineering Journal, Vol.187, 108661:1-108661:9, 2022. (Tokushima University Institutional Repository) ● Metadata: 117580 (Link to Publication Site) ● Publication site (DOI): 10.1016/j.bej.2022.108661 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-85139727087 (Tokushima University Institutional Repository: 117580, DOI: 10.1016/j.bej.2022.108661, Elsevier: Scopus)
4.	Retsuo Kawakami, Yuki Mimoto, Shin-ichiro Yanagiya, Akihiro Shirai, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai : Photocatalytic Activity Enhancement of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles Annealed with Low-Temperature O2 Plasma, Physica Status Solidi (A) Applications and Materials Science, Vol.218, 2100536-1-2100536-13, 2021. (Tokushima University Institutional Repository) ● Metadata: 117581 (Link to Publication Site) ● Publication site (DOI): 10.1002/pssa.202100536 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/pssa.202100536 (Tokushima University Institutional Repository: 117581, DOI: 10.1002/pssa.202100536)
5.	Retsuo Kawakami, Yuki Yoshitani, Akihiro Shirai, Shin-ichiro Yanagiya, Hirofumi Koide, Yuki Mimoto, Kosuke Kajikawa, Masahito Niibe, Yoshitaka Nakano, Chisato Azuma and Takashi Mukai : Effects of Nonequilibrium Atmospheric-Pressure O2 Plasma-Assisted Annealing on Anatase TiO2 Nanoparticles, Applied Surface Science, Vol.526, 146684:1-146684:12, 2020. (Tokushima University Institutional Repository) ● Metadata: 117582 (Link to Publication Site) ● Publication site (DOI): 10.1016/j.apsusc.2020.146684 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.apsusc.2020.146684 (Tokushima University Institutional Repository: 117582, DOI: 10.1016/j.apsusc.2020.146684)
6.	Retsuo Kawakami, Yuki Yoshitani, Kimiaki Mitani, Masahito Niibe, Yoshitaka Nakano, Chisato Azuma and Takashi Mukai : Effects of Air-Based Nonequilibrium Atmospheric Pressure Plasma Jet Treatment on Characteristics of Polypropylene Film Surfaces, Applied Surface Science, Vol.509, 144910:1-144910:10, 2020. (Tokushima University Institutional Repository) ● Metadata: 114084 (Link to Publication Site) ● Publication site (DOI): 10.1016/j.apsusc.2019.144910 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-85076610471 (Tokushima University Institutional Repository: 114084, DOI: 10.1016/j.apsusc.2019.144910, Elsevier: Scopus)
7.	Shin-ichiro Yanagiya, Toshihiko Takahata, Yuuki Yoshitani, Retsuo Kawakami and Akihiro Furube : Steady-state and time-resolved optical properties of multilayer film of titanium dioxide sandwiched by gold nanoparticles and gold thin film, ChemNanoMat : Chemistry of Nanomaterials for Energy, Biology and More, Vol.5, 1015-1020, 2019. (Summary) We proposed metal insulator (MI) and metal insulator metal (MIM) structures of titanium dioxide (TiO2) sandwiched by gold nanoparticles (AuNPs) layer and gold sputtered thin film (only for the MIM film) to couple localized plasmon mode of AuNP with multi reflection mode and/or cavity resonator mode of TiO2. The optical extinctions of MI and MIM with differing TiO2 thickness were studied theoretically by finite element method simulation and experimentally by optical spectrometry. The extinction peaks of MI and MIM shifted by exchanging the surrounding medium from air to TiO2. The interference of TiO2 in MI structure also affected the extinction spectra showing the oscillation along the spectrum of AuNP in TiO2. Then, the extinction degree of MIM was higher than that of MI because of the coupling between cavity resonance mode with localized plasmon mode and interband transition in AuNPs. In addition, the cross section of MI and MIM films were observed by scanning electron microscopy. The surface of thinner film was rough because TiO2 heterogeneously grew from AuNP. The irregular growth of TiO2 might have induced the wide range extinction in 300 2500 nm after Au thin film deposition. The transient absorption spectra using a femtosecond laser were also carried out under the condition of 800 nm for excitation laser and 950 nm for probe laser. The long lived electron (∼1 ns) was observed in thick MIM film as a result of hot electron transfer from the gold nanostructure in the film. (Tokushima University Institutional Repository) ● Metadata: 114234 (Link to Publication Site) ● Publication site (DOI): 10.1002/cnma.201900042 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-85063914756 (Tokushima University Institutional Repository: 114234, DOI: 10.1002/cnma.201900042, Elsevier: Scopus)
8.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Shin-ichiro Yanagiya, Yuki Yoshitani, Chisato Azuma and Takashi Mukai : Effects of Ultraviolet Wavelength and Intensity on AlGaN Thin Film Surfaces Irradiated Simultaneously with CF4 Plasma and Ultraviolet, Vacuum, Vol.159, 45-50, 2019. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2018.10.017 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-85054601253 (DOI: 10.1016/j.vacuum.2018.10.017, Elsevier: Scopus)
9.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Yuma Araki, Yuki Yoshitani, Chisato Azuma and Takashi Mukai : Characteristics of TiO2 Thin Films Surfaces Treated by O2 Plasma in Dielectric Barrier Discharge with the Assistance of External Heating, Vacuum, Vol.152, 265-271, 2018. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2018.03.051 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.vacuum.2018.03.051 (DOI: 10.1016/j.vacuum.2018.03.051)
10.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Ryo Tanaka, Chisato Azuma and Takashi Mukai : Characteristics of N₂ and O₂ Plasma-Induced Damages on AlGaN Thin Film Surfaces, Physica Status Solidi (A) Applications and Materials Science, Vol.214, No.11, 1700393-1-1700393-7, 2017. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssa.201700393 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/pssa.201700393 (DOI: 10.1002/pssa.201700393)
11.	Yoshitaka Nakano, Retsuo Kawakami and Masahito Niibe : Generation of Electrical Damage in n-GaN Films Following Treatment in a CF4 Plasma, Applied Physics Express, Vol.10, 116201-1-116201-4, 2017. (Link to Publication Site) ● Publication site (DOI): 10.7567/APEX.10.116201 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-85039173783 (DOI: 10.7567/APEX.10.116201, Elsevier: Scopus)
12.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai : AlGaN Surfaces Etched by CF4 Plasma with and without the Assistance of Near-Ultraviolet Irradiation, Vacuum, Vol.136, 28-35, 2017. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2016.11.016 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84999036889 (DOI: 10.1016/j.vacuum.2016.11.016, Elsevier: Scopus)
13.	Masahito Niibe, Takuya Kotaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai : Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray Absorption Spectroscopy, e-Journal of Surface Science and Nanotechnology, Vol.14, 9-13, 2016. (Link to Publication Site) ● Publication site (DOI): 10.1380/ejssnt.2016.9 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282680164267008 ● Summary page in Scopus @ Elsevier: 2-s2.0-84975797455 (DOI: 10.1380/ejssnt.2016.9, CiNii: 1390282680164267008, Elsevier: Scopus)
14.	Shohdai Hirai, Masahito Niibe, Retsuo Kawakami, Tatsuo Shirahama, Yoshitaka Nakano and Takashi Mukai : Surface Analysis of AlGaN Treated with CF4 and Ar Plasma Etching, e-Journal of Surface Science and Nanotechnology, Vol.13, 481-487, 2015. (Link to Publication Site) ● Publication site (DOI): 10.1380/ejssnt.2015.481 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390001205185770368 ● Search Scopus @ Elsevier (DOI): 10.1380/ejssnt.2015.481 (DOI: 10.1380/ejssnt.2015.481, CiNii: 1390001205185770368)
15.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Tatsuo Shirahama, Shodai Hirai and Takashi Mukai : Comparison between AlGaN Surfaces Etched by Carbon Tetrafluoride and Argon Plasmas: Effect of the Fluorine Impurities Incorporated in the Surface, Vacuum, Vol.119, 264-269, 2015. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2015.06.002 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84934888226 (DOI: 10.1016/j.vacuum.2015.06.002, Elsevier: Scopus)
16.	Yoshitaka Nakano, Daisuke Ogawa, Keiji Nakamura, Retsuo Kawakami and Masahito Niibe : Ar⁺-Irradiation-Induced Damage in Hydride Vapor-Phase Epitaxy GaN Films, Journal of Vacuum Science & Technology A, Vol.33, 043002-1-043002-5, 2015. (Link to Publication Site) ● Publication site (DOI): 10.1116/1.4922593 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84934905433 (DOI: 10.1116/1.4922593, Elsevier: Scopus)
17.	Keiji Sano, Masahito Niibe, Retsuo Kawakami and Yoshitaka Nakano : Recovery of X-ray Absorption Spectral Profile in Etched TiO2 Thin Films, Journal of Vacuum Science & Technology A, Vol.33, No.3, 031403-1-031403-4, 2015. (Link to Publication Site) ● Publication site (DOI): 10.1116/1.4917012 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84927585752 (DOI: 10.1116/1.4917012, Elsevier: Scopus)
18.	Retsuo Kawakami, Yoshitaka Nakano, Masahito Niibe, Tatsuo Shirahama and Takashi Mukai : Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF₄ Plasma Treatments, ECS Solid State Letters, Vol.4, No.4, 36-38, 2015. (Link to Publication Site) ● Publication site (DOI): 10.1149/2.0011505ssl (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84924078391 (DOI: 10.1149/2.0011505ssl, Elsevier: Scopus)
19.	Chen Miao-Gen, Keiji Nakamura, Qiu Yan-Qing, Daisuke Ogawa, Retsuo Kawakami, Masahito Niibe and Yoshitaka Nakano : Optical and Electrical Investigation of Ar⁺-Irradiated GaN, Applied Physics Express, Vol.7, No.11, 111003-1-111003-3, 2014. (Link to Publication Site) ● Publication site (DOI): 10.7567/APEX.7.111003 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.7567/APEX.7.111003 (DOI: 10.7567/APEX.7.111003)
20.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Tatsuo Shirahama, Kazuma Aoki, Kenta Oba, Mari Takabatake and Takashi Mukai : Damage Characteristics of n-GaN Thin Film Surfaces Etched by Ultraviolet Light-Assisted Helium Plasmas, Thin Solid Films, Vol.570, 81-86, 2014. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.tsf.2014.09.019 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.tsf.2014.09.019 (DOI: 10.1016/j.tsf.2014.09.019)
21.	Retsuo Kawakami, Niibe Masahito, Takeuchi Hideo, Konishi Masashi, Mori Yuta, Shirahama Tatsuo, Yamada Tetsuya and Tominaga Kikuo : Surface Damage of 6H-SiC Originating from Argon Plasma Irradiation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.315, 213-217, 2013. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.nimb.2013.05.084 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84901441705 (DOI: 10.1016/j.nimb.2013.05.084, Elsevier: Scopus)
22.	Retsuo Kawakami, Niibe Masahito, Nakano Yoshitaka, Shirahama Tatsuo, Yamada Tetsuya, Aoki Kazuma, Takabatake Mari, Tominaga Kikuo and Mukai Takashi : Damage characteristics of n-GaN thin film surfaces etched by N2 plasmas, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.10, No.11, 1553-1556, 2013. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.201300190 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84887623401 (DOI: 10.1002/pssc.201300190, Elsevier: Scopus)
23.	Retsuo Kawakami, Niibe Masahito, Nakano Yoshitaka, Konishi Masashi, Mori Yuta, Takeuchi Hideo, Shirahama Tatsuo, Yamada Tetsuya and Tominaga Kikuo : Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas, Journal of Physics: Conference Series, Vol.441, 012038-1-012038-6, 2013. (Link to Publication Site) ● Publication site (DOI): 10.1088/1742-6596/441/1/012038 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1088/1742-6596/441/1/012038 (DOI: 10.1088/1742-6596/441/1/012038)
24.	Retsuo Kawakami, Niibe Masahito, Nakano Yoshitaka, Konishi Masashi, Mori Yuta, Takeichi Atsushi, Tominaga Kikuo and Mukai Takashi : Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas, Japanese Journal of Applied Physics, Vol.52, 05EC05-1-05EC05-5, 2013. (Summary) Damage characteristics of p-GaN surfaces etched by capacitively coupled radio frequency Ar plasma at various gas pressures have been studied in terms of the ultraviolet (UV) light irradiation effect. The UV light corresponding to Ar II is emitted from the plasma at high gas pressures from 50 to 100 mTorr, whereas no UV light is emitted at a low gas pressure of 10 mTorr. The result of the etched p-GaN surface is compared with that of the etched n-GaN surface. The difference between the results of the p- and n-GaN surfaces depends strongly on the gas pressure. Both the experimental N/Ga ratios at the p- and n-GaN surfaces etched at the low gas pressure decrease with increasing etching time. The decreases in the experimental N/Ga ratios agree with the simulation results that N atoms at the p- and n-GaN surfaces are preferentially removed by Ar<sup>+</sup>ions. The morphologies of the p- and n-GaN surfaces etched at the low gas pressure are similar to those of the as-grown surfaces. The damage characteristic of the p-GaN surface induced in the absence of the UV light irradiation also appears at the high gas pressures, although the p-GaN surfaces etched at the high gas pressures are irradiated with the emitted UV light. In contrast, both the experimental N/Ga ratios and morphologies of the n-GaN surfaces etched at the high gas pressures change with increasing etching time. The changes in the n-GaN surfaces probably result from the UV light irradiation. (Link to Publication Site) ● Publication site (DOI): 10.7567/JJAP.52.05EC05 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360003449886926720 ● Search Scopus @ Elsevier (DOI): 10.7567/JJAP.52.05EC05 (DOI: 10.7567/JJAP.52.05EC05, CiNii: 1360003449886926720)
25.	Niibe Masahito, Sano Keiji, Kotaka Takuya, Retsuo Kawakami, Tominaga Kikuo and Nakano Yoshitaka : Etching Damage and Its Recovery by Soft X-ray Irradiation Observed in Soft X-ray Absorption Spectra of TiO2 Thin Film, Journal of Applied Physics, Vol.113, No.12, 126101-1-126101-3, 2013. (Link to Publication Site) ● Publication site (DOI): 10.1063/1.4798301 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1063/1.4798301 (DOI: 10.1063/1.4798301)
26.	Yoshitaka Nakano, Keiji Nakamura, Masahito Niibe, Retsuo Kawakami, Noriyoshi Ito, Takuya Kotaka and Kikuo Tominaga : Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN, ECS Journal of Solid State Science and Technology, Vol.2, No.3, 110-113, 2013. (Link to Publication Site) ● Publication site (DOI): 10.1149/2.004304jss (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-84887483168 (DOI: 10.1149/2.004304jss, Elsevier: Scopus)
27.	Niibe Masahito, Kotaka Takuya, Retsuo Kawakami, Nakano Yoshitaka, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas, Japanese Journal of Applied Physics, Vol.52, 01AF04-1-01AF04-5, 2013. (Summary) To understand the details of etching-induced damage on a GaN surface, n-GaN crystals were plasma-etched with He and N2 gases. The etched surfaces were analyzed by X-ray photoelectron spectroscopy (XPS) and soft X-ray absorption spectroscopy (XAS) methods. The composition of the surface etched with He plasma changed significantly to being Ga-rich with the N/Ga ratio nearly equaling 0.4--0.5. The ratio of the surface etched with N2 plasma was about 0.6. The shape of the near-edge X-ray absorption fine structure (NEXAFS) of the N-K edge deformed with increasing gas pressure and processing time. The deformation can be explained by the increase in the band widths of a number of peaks in the NEXAFS spectra owing to the increase in the degree of structural disorder in the crystal. The increase in band width for the surface etched with N2 plasma was larger than that for the surface etched with He plasma. The above results can be explained with the model of the elastic energy transfer ratio of He+ and N2+ ions incident on the solid surface. (Link to Publication Site) ● Publication site (DOI): 10.7567/JJAP.52.01AF04 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360003449886208256 ● Search Scopus @ Elsevier (DOI): 10.7567/JJAP.52.01AF04 (DOI: 10.7567/JJAP.52.01AF04, CiNii: 1360003449886208256)
28.	Retsuo Kawakami, Atsushi Takeichi, Masahito Niibe, Masashi Konishi, Yuta Mori, Takuya Kotaka, Takeshi Inaoka, Kikuo Tominaga and Takashi Mukai : Capacitively Coupled Radio Frequency Nitrogen Plasma Etch Damage to N-Type Gallium Nitride, Vacuum, Vol.87, 136-140, 2013. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2012.07.006 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-85027938994 (DOI: 10.1016/j.vacuum.2012.07.006, Elsevier: Scopus)
29.	Retsuo Kawakami, Niibe Masahito, Takeichi Atsushi, Mori Yuta, Konishi Masashi, Kotaka Takuya, Matsunaga Fumihiko, Takasaki Toshihide, Kitano Takanori, Miyazaki Takahiro, Inaoka Takeshi and Tominaga Kikuo : Characteristics of TiO₂ Thin Film Surfaces Treated by Helium and Air Dielectric Barrier Discharge Plasmas, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.51, No.8, 08HB04-1-08HB04-6, 2012. (Summary) The characteristics of TiO2 thin film surfaces treated with He and air dielectric barrier discharge (DBD) plasmas at different gas pressures are investigated. There is a difference between the two DBD plasma characteristics: for He-DBD, which is an atmospheric pressure glow discharge (APGD), the breakdown voltage and discharge current hardly change with increasing gas pressure, whereas for air-DBD, which is basically a filamentary discharge, they increase with increasing gas pressure. There is also a difference between the characteristics of TiO2 surfaces treated with the two DBDs. The surface roughness for He-DBD is lower than the roughness of the as-grown surface, whereas that for air-DBD is higher. The surface hydrophilicity for He-DBD is more enhanced than the hydrophilicity of the as-grown surface regardless of UV irradiation. The hydrophilicity for air-DBD is dependent on UV irradiation. It is more enhanced with UV irradiation; it is not improved adequately without UV irradiation. (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.51.08HB04 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360847874815983488 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.51.08HB04 (DOI: 10.1143/JJAP.51.08HB04, CiNii: 1360847874815983488)
30.	Niibe Masahito, Kotaka Takuya, Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Damage Analysis of Plasma-etched n-GaN Crystal Surface by Nitrogen K-edge NEXAFS Spectroscopy, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.51, No.1, 01AB02-1-01AB02-4, 2012. (Summary) The surface of an n-GaN crystal etched with an Ar, Kr, or Xe plasma was analyzed by nitrogen K near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The NEXAFS spectroscopy was carried out with the total electron yield (TEY) method in a sample current mode and the total fluorescence yield (TFY) method by measuring the amount of fluorescence using a photodiode. The shapes of the spectra of Ar plasma-etched samples obtained by the TEY method became smooth (blunt) with increasing Ar pressure from 10 to 200 mTorr. However, those obtained by the TFY method did not change with pressure. These results indicate that the etching damage was restricted in the shallow region of less than a few nm from the surface. A change in the NEXAFS spectral shape of Kr or Xe plasma-etched samples was not observed even when measured by the TEY method. This result indicates that the surface damage in Kr or Xe plasma-etched samples was less pronounced than that in Ar plasma-etched samples. (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.51.01AB02 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360003446856686976 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.51.01AB02 (DOI: 10.1143/JJAP.51.01AB02, CiNii: 1360003446856686976)
31.	Nakano Yoshitaka, Retsuo Kawakami, Niibe Masahito, Takeichi Atsushi, Inaoka Takeshi and Tominaga Kikuo : Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching, Materials Research Society Symposia Proceedings, Vol.1396, No.mrsf11-1396-o07-36, 1-6, 2011. (Link to Publication Site) ● Publication site (DOI): 10.1557/opl.2011.1533 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1557/opl.2011.1533 (DOI: 10.1557/opl.2011.1533)
32.	Retsuo Kawakami, Takeichi Atsushi, Niibe Masahito, Inaoka Takeshi and Tominaga Kikuo : Damage Characteristics of TiO2 Thin Film Surfaces Etched by Capacitively Coupled Radio Frequency Helium Plasmas, Japanese Journal of Applied Physics, Vol.50, No.8, 08KD01-1-08KD01-5, 2011. (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.50.08KD01 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1520572359144187264 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.50.08KD01 (DOI: 10.1143/JJAP.50.08KD01, CiNii: 1520572359144187264)
33.	Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo, Niibe Masahito, Mukai Takashi, Takeichi Atsushi and Fukudome Toshiaki : Synergy Effect of Xenon Plasma Ions and Ultraviolet Lights on GaN Etch Surface Damage and Modification, Transactions of the Materials Research Society of Japan, Vol.36, No.1, 75-78, 2011. (Link to Publication Site) ● Publication site (DOI): 10.14723/tmrsj.36.75 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.14723/tmrsj.36.75 (DOI: 10.14723/tmrsj.36.75)
34.	Niibe Masahito, Maeda Yoshie, Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Surface analysis of n-GaN crystal damaged by RF-plasma-etching with Ar, Kr, and Xe gases, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.8, No.2, 435-437, 2011. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.201000507 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/pssc.201000507 (DOI: 10.1002/pssc.201000507)
35.	Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo, Niibe Masahito, Mukai Takashi, Takeichi Atsushi and Fukudome Toshiaki : Etch-induced damage characteristics of n-GaN surfaces by capacitively coupled radio frequency He and Ar plasmas, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol.8, No.2, 441-443, 2011. (Link to Publication Site) ● Publication site (DOI): 10.1002/pssc.201000400 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/pssc.201000400 (DOI: 10.1002/pssc.201000400)
36.	Retsuo Kawakami, Niibe Masahito, Fukudome Toshiaki, Takeichi Atsushi, Inaoka Takeshi and Tominaga Kikuo : Effect of DBD Air Plasma Treatment on TiO₂ Thin Film Surfaces, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.50, No.1, 01BE02-1-01BE02-5, 2011. (Summary) Surface treatment effect on TiO2 thin films with the anatase phase by dielectric barrier discharge (DBD) air plasmas has been investigated for a variety of gas pressures and treatment times. At a low gas pressure (100 hPa) at which a glow-like discharge plasma occurs, hydrophilicities of TiO2 thin films treated at 5 and 30 min are enhanced compared with that of the as-grown thin film. For the 5 min treatment, this trend is more pronounced probably due to oxygen absorbed on the surface from the air plasma. For the 30 min treatment, the enhanced hydrophilicity is probably due to oxygen vacancy created on the surface by a high fluence of the plasma. When the gas pressure increases to 400 hPa at which a streamer discharge plasma occurs, the hydrophilicity is more weakened than that of the as-grown thin film: the plasma-induced damage occurs regardless of the treatment time. This result would probably result from the higher discharge current and UV light intensity caused by the higher breakdown voltage based on Paschen's law. (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.50.01BE02 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360284924861439616 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.50.01BE02 (DOI: 10.1143/JJAP.50.01BE02, CiNii: 1360284924861439616)
37.	Retsuo Kawakami, Tominaga Kikuo, Okada Kenji, Nouda Takahiro, Inaoka Takeshi, Takeichi Atsushi, Fukudome Toshiaki and Murao Kenichi : Etch Damage Characteristics of TiO2 Thin Films by Capacitively Coupled RF Ar Plasmas, Vacuum, Vol.84, No.12, 1393-1397, 2010. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2010.01.006 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.vacuum.2010.01.006 (DOI: 10.1016/j.vacuum.2010.01.006)
38.	Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and Mukai Takashi : Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.48, No.8, 08HF01-1-08HF01-4, 2009. (Summary) GaN etching damage characteristics by capacitively coupled radio frequency Kr and Ar plasmas have been found to differ significantly, on the basis of experimental and simulation results. The morphology of a GaN surface etched by Kr plasma is as smooth as that of the as-grown surface, and is independent of gas pressure and etching time. The agreement between the experimental and simulated etching depths for the Kr plasma, which are lower than those for the Ar plasma, indicates a significant contribution to the GaN damage of the physical etching effect. In contrast, Ar plasma etching produces a rough surface, which is dependent on gas pressure and etching time, and appears to be due to a chemical effect. The difference in the GaN surface morphologies etched by the Kr and Ar plasmas may be attributed to the different depths etched for these two plasmas. Moreover, the simulation shows that, for the Kr plasma, Ga is preferentially etched from GaN, whereas the preferential etching of N occurs for the Ar plasma. The difference in preferential etching between the Kr and Ar plasmas may be related to the difference between the GaN surface morphologies etched by these two plasmas. (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.48.08HF01 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1360003446854928000 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.48.08HF01 (DOI: 10.1143/JJAP.48.08HF01, CiNii: 1360003446854928000)
39.	Retsuo Kawakami, Inaoka Takeshi, Kuwahara Akinobu, Kikuo Tominaga and Mukai Takashi : Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.47, No.8, 6863-6866, 2008. (Summary) The change in the morphology of n-GaN surfaces etched by capacitively coupled RF Ar plasmas has been studied from the viewpoint of a synergy effect of particle radiation and UV radiation from the RF plasmas. The particle radiation (in particular, the energy of Ar+ impinging on n-GaN) is intensified with decreasing gas pressure from 200 to 10 mTorr, whereas the intensity of the UV radiation (whose peak wavelength corresponds to the GaN band-gap energy) is significantly weakened. The reverse result occurs when the gas pressure increases. Each type of radiation brings about a smooth surface morphology similar to that of the as-grown surface. However, at 50 or 100 mTorr, at which both types of radiation are expected to coexist, the surface morphology shows various types of pits (defects or dislocations), which seem to be induced by the synergy effect. (Keyword) RF plasmas / argon / n-GaN / plasma etching / surface morphology (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.47.6863 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1520290883951543808 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.47.6863 (DOI: 10.1143/JJAP.47.6863, CiNii: 1520290883951543808)
40.	Retsuo Kawakami and Inaoka Takeshi : Effect of Argon Plasma Etching Damage on Electrical Characteristics of Gallium Nitride, Vacuum, Vol.83, No.3, 490-492, 2008. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.vacuum.2008.04.009 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.vacuum.2008.04.009 (DOI: 10.1016/j.vacuum.2008.04.009)
41.	Retsuo Kawakami, Inaoka Takeshi, Minamoto Shingo and Kikuhara Yasuyuki : Analysis of GaN Etching Damage by Capacitively Coupled RF Ar Plasma Exposure, Thin Solid Films, Vol.516, No.11, 3478-3481, 2008. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.tsf.2007.08.019 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.tsf.2007.08.019 (DOI: 10.1016/j.tsf.2007.08.019)
42.	Retsuo Kawakami : Simulation Study of Carbon Impurity Dynamics on Tungsten Surfaces Exposed to Hydrogen Ions, Journal of Nuclear Materials, Vol.348, 256-262, 2006. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jnucmat.2005.09.019 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jnucmat.2005.09.019 (DOI: 10.1016/j.jnucmat.2005.09.019)
43.	Retsuo Kawakami : Simulation study of carbon impurity dynamics on reduced-activation ferritic/martensitic steel material at elevated temperatures under hydrogen exposure, Fusion Engineering and Design, Vol.81, No.8-14, 1683-1687, 2006. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.fusengdes.2005.09.009 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.fusengdes.2005.09.009 (DOI: 10.1016/j.fusengdes.2005.09.009)
44.	Retsuo Kawakami : Simulation Study on Effects of Chemically Eroded Methane and Ethylene Molecules on Carbon Impurity Transport and Net Erosion of Carbon Materials, Journal of Plasma and Fusion Research SERIES, Vol.7, 94-97, 2006.
45.	Retsuo Kawakami, Tomohisa Shimada, Yoshio Ueda and Masahiro Nishikawa : Influence of Carbon Impurity on Net Erosion of Reduced-Activation Ferritic/Martensitic Steel and Tungsten Materials Exposed to Hydrogen and Carbon Mixed Ion Beam Relevant to Fusion Plasma Boundary, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.45, No.1A, 221-227, 2006. (Summary) Using a simulation code for dynamic interactions between energetic ions and solid materials, the influence of C impurity concentration on net erosion of reduced-activation ferritic/martensitic steel, RAF (Fe in the simulation), and W materials exposed to a 0.33 keV H+ and 1 keV C+ impurity mixed ion beam relevant to a fusion plasma boundary has been studied. A comparison of the simulation results between the Fe and W materials at C impurity concentrations less than C: 1.00% is described and discussed. In particular, emphasis is paid to a quantitative comparison between depth profiles of C impurity deposited on the materials and the experimental data, which were obtained by the H and C mixed ion beam exposure experiments of RAF (F82H in the experiment) and W materials. For the W material, chemical erosion (CH4 emission) of the deposited C impurity by the H+ impact is taken into account in the simulation. The C impurity concentration causes a significant difference in net erosion between the two materials. For the Fe material, net erosion is suppressed with increasing C impurity concentration. In contrast, for the W material, net erosion is enhanced. In the depth profile, there is also a significant difference between the two materials. At C: 0.11%, the impinging C impurity is hardly deposited on the Fe material. For the W material, the depth profile at C: 0.11% shows a local peak around a certain depth, which is in good agreement with the experimental data at 653 K. This agreement indicates no contribution of the chemical erosion in the H-C-W system, which is quite different from that in the H-C system where the chemical erosion occurs. The difference seems to indicate that the chemical erosion in the H-C-W system is dependent upon amounts of the deposited C impurity or the binary alloy phase change between W and C. When the C impurity concentration increases to C: 0.84%, the impinging C impurity is deposited on the Fe material. The depth profile shows a maximum at the top surface, which reproduces the experimental data at 453 K. For the W material, the depth profile at C: 0.84% shows almost the same tendency as that at C: 0.11%, but shows a larger amount of the deposited C impurity. The simulation result at C: 0.84% is in disagreement with the experimental result at 653 K, which shows a maximum at the top surface. This disagreement is not fully explained by only the chemical erosion. (Keyword) RAF / material mixing / chemical erosion (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.45.221 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1520290884449917696 ● Summary page in Scopus @ Elsevier: 2-s2.0-31644445650 (DOI: 10.1143/JJAP.45.221, CiNii: 1520290884449917696, Elsevier: Scopus)
46.	Retsuo Kawakami and Mitani Takenori : Simulation Study on Influence of Chemically Eroded Higher Hydrocarbons on SOL Impurity Transport and Effect of Dynamical Material Mixing on Erosion/Deposition of Tungsten Surfaces Exposed to Plasma Boundary, Journal of Nuclear Materials, Vol.337-339, 45-49, 2005. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jnucmat.2004.08.027 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jnucmat.2004.08.027 (DOI: 10.1016/j.jnucmat.2004.08.027)
47.	Retsuo Kawakami : Simulation Study on Influence of Chemically Eroded Carbon Impurity Transport on Net Sputtering Erosion of Carbon Materials Exposed to Edge Fusion Plasmas, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.44, No.2, 1069-1075, 2005. (Summary) Regarding TEXTOR and ITER-FEAT fusion devices, the net sputtering erosion rate of C targets exposed to their edge fusion plasmas has been investigated using a simulation code for plasma surface interactions, EDDY. The influence of the transport of chemically eroded CD4 molecules on the net erosion rate is presented. Emphasis is put on the difference in the simulated results between the CD4 reaction chain with e-, the CD4 reaction chain with e- plus D+, and the sticking coefficients of CDx locally returned back to the targets, which are related closely to the local redeposition, for a variety of plasma densities and temperatures. In particular, at a high density such as $10^{19}$ m-3 and low temperatures of less than 10 eV, the net erosion rate is found to be suppressed by a significant contribution of the local redeposition resulting from the charge exchange reactions of CDx with D+ if all the locally returned CDx radicals stick. For the ITER-FEAT divertor plasma, the profile of the net erosion rate along the outer vertical target is significantly changed by the C impurity concentration in the plasma, which is eroded from other wall surfaces and then transported by the plasma. For the D+ plasma exposure only, the net erosion rate is highest around the separatrix strike point. On the other hand, it is highest at the private plasma region if a few percent of the C impurity concentration is added to the D+ plasma exposure. The local redeposition resulting from the charge exchange reactions significantly suppresses the net erosion rates at these plasma regions, but does not bring about a significant change in the erosion/deposition profile along the outer vertical target. (Keyword) divertor / TEXTOR / ITER-FEAT / Monte Carlo code / EDDY code / chemical erosion / CD4 reaction chain (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.44.1069 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282681242219136 ● Search Scopus @ Elsevier (DOI): 10.1143/JJAP.44.1069 (DOI: 10.1143/JJAP.44.1069, CiNii: 1390282681242219136)
48.	Tomohisa Shimada, Takahisa Funabiki, Retsuo Kawakami, Yoshio Ueda and Masahiro Nishikawa : Carbon Behavior on Tungsten Surface after Carbon and Hydrogen Mixed Beam Irradiation, Journal of Nuclear Materials, Vol.329-333, No.0, 747-751, 2004. (Keyword) ION-BEAM / BLISTER FORMATION / EROSION / REFLECTION (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jnucmat.2004.04.180 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jnucmat.2004.04.180 (DOI: 10.1016/j.jnucmat.2004.04.180)
49.	Yoshio Ueda, Takahisa Funabiki, Tomohisa Shimada, Retsuo Kawakami and Masahiro Nishikawa : Effects of Carbon Impurity in Fusion Plasmas on Erosion of RAF First Wall, Journal of Nuclear Materials, Vol.329-333, 771-774, 2004. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jnucmat.2004.04.175 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jnucmat.2004.04.175 (DOI: 10.1016/j.jnucmat.2004.04.175)
50.	Takenori Mitani, Retsuo Kawakami and Shuhei Kuriu : Simulation Study of Sputtering Erosion and Impurity Deposition on Carbon and Tungsten Surfaces Irradiated with Deuterium Plasmas Including Carbon Impurity, Journal of Nuclear Materials, Vol.329, No.329-333, 830-835, 2004. (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jnucmat.2004.04.212 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jnucmat.2004.04.212 (DOI: 10.1016/j.jnucmat.2004.04.212)
51.	Retsuo Kawakami, Tomohisa Shimada, Yoshio Ueda and Masahiro Nishikawa : Simulation Study of Dynamical Material Mixing on Tungsten Surfaces at Elevated Temperatures due to Hydrogen and Carbon Mixed Ion Beam Irradiation, Journal of Nuclear Materials, Vol.329-333, No.0, 737-741, 2004. (Keyword) BEHAVIOR (Link to Publication Site) ● Publication site (DOI): 10.1016/j.jnucmat.2004.04.182 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/j.jnucmat.2004.04.182 (DOI: 10.1016/j.jnucmat.2004.04.182)
52.	Retsuo Kawakami : Temporal Evolution of Erosion/Deposition on Tungsten Surfaces Exposed to SOL Plasmas and its Impact on Plasma-Surface Interactions, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.43, No.2, 785-794, 2004. (Summary) Temporal evolution of erosion/deposition on W surfaces exposed to SOL plasma composed of D+ and C4+ impurities, and its impact on plasma-surface interactions such as ion reflection and physical sputtering have been calculated. In particular, changes in the thickness of the W targets due to (i) C impurity concentration in the SOL plasma, and due to the additional contribution of (ii) chemical sputtering (CD4 emission) and (iii) thermal diffusion of C impurity deposited on the target are focused on. Changes in the depth profile of the deposited C are also considered. The calculated results have been compared qualitatively with experimental data which were obtained in TEXTOR-94. (i) Erosion of Wnear exposed close to the LCFS and deposition of C impurity on Wfar exposed far from the LCFS are reproduced by assuming different C impurity concentrations at the two targets. The deposition is due to the high C impurity concentration and the low plasma ion temperature, whereas the erosion is due to the converse reasons. However, the depth profiles are in disagreement with the measured growth of the W-C contamination layers. (ii) By the weak contribution of the chemical sputtering, the erosion of Wnear and the deposition on Wfar are also reproduced. Since the amount of the deposited C is decreased by the chemical sputtering, the depth profiles are also in disagreement with the experimental data. (iii) By the significant contribution of the thermal diffusion, the erosion/deposition at the two targets is also reproduced. In addition, the depth profiles for Wnear and Wfar, which show there is a deep penetration of the deposited C due to the thermal diffusion, are in good agreement with the experimental ones. (Keyword) carbon / erosion / deposition / depth profile / carbon impurity concentration / chemical sputtering / thermal diffusion (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.43.785 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282681241773440 ● Summary page in Scopus @ Elsevier: 2-s2.0-2142710994 (DOI: 10.1143/JJAP.43.785, CiNii: 1390282681241773440, Elsevier: Scopus)
53.	Retsuo Kawakami, Tomohisa Shimada, Yoshio Ueda and Masahiro Nishikawa : Dynamic Behavior of Tungsten Surfaces due to Simultaneous Impact of Hydrogen and Carbon Ion Beam, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.42, No.12, 7529-7535, 2003. (Summary) By using a simulation code for ion-solid interactions, EDDY, the dynamical behavior of W surfaces irradiated simultaneously with H+ and C+ impurity has been studied. This code models the fluence evolution of composition changes between C and W at the irradiated surface, which results from sputtering erosion and impurity deposition. The result has been described in terms of C impurity concentration in the irradiation. It has been compared with experimental data obtained by an ion beam irradiation device. In particular, the C impurity concentration has an important role in erosion/deposition at the W surface. As the C impurity concentration increases, the erosion is enhanced. As the C impurity concentration exceeds 3.00%, there is a transition from erosion to deposition which is due to the formation of a C film on the W surface. Regarding the result that the erosion changes to deposition, the simulation qualitatively reproduces the experimental results measured by X-ray photoemission spectroscopy (XPS). There is a different tendency in the fluence dependence for the different C impurity concentrations. For C:0.11%, the erosion rate increases with increasing fluence. This results from a growth of a local peak at around a depth of 20 nm in the depth profile of the deposited C. The growth is in good agreement with the experimental result, which shows that there is a strong contribution from recoil implantation of the deposited C due to a synergetic effect of the H and C impurity. For C:0.84%, there are almost the same tendencies as for C:0.11% in the erosion rate and in the depth profile. However, the growth of the local peak at around a depth of 10 nm is in disagreement with the measured one, which occurs near the surface. The disagreement appears to be attributable to the contribution of the surface segregation. (Keyword) simultaneous impact / erosion / deposition / material mixing / carbon impurity concentration / fluence dependence (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.42.7529 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282681243152128 ● Summary page in Scopus @ Elsevier: 2-s2.0-1242345232 (DOI: 10.1143/JJAP.42.7529, CiNii: 1390282681243152128, Elsevier: Scopus)
54.	Retsuo Kawakami and Kaoru Ohya : Dynamic Behavior of Carbon Deposited on Tungsten Surface due to Carbon Ion Bombardment and Its Influence on Ion-Solid Interactions, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.42, No.8, 5259-5266, 2003. (Summary) 動的プラズマ壁相互作用コードEDDYを用いて，タングステン表面への炭素イオンの照射時の表面組成と粒子放出特性の照射量依存性について，衝突ミキシングと熱拡散を考慮して研究した．低照射量では，物理スパッタ率は表面温度の上昇と共に減少するが，高照射量では逆に増加する．これは堆積Cの拡散のため混成層の顕著な成長が促進される結果と考えられる． (Keyword) carbon deposition / sputtering erosion / reflection / fluence dependence / thermal activated diffusion / fluence dependent depth profile (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.42.5259 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390282681242055296 ● Summary page in Scopus @ Elsevier: 2-s2.0-0142055894 (DOI: 10.1143/JJAP.42.5259, CiNii: 1390282681242055296, Elsevier: Scopus)
55.	Retsuo Kawakami and Kaoru Ohya : Sputtering Erosion and Redeposition at Divertor Surfaces Exposed to ITER-FEAT Edge Plasmas, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.42, No.6A, 3623-3632, 2003. (Summary) B2-EIRENEコードによって計算されたプラズマパラメータ分布を用いて，ITER-FEATのダイバータ部品の正味の損耗を，動的プラズマ壁相互作用コードEDDYで予測した．WドームとC垂直なターゲットへの炭素堆積が化学スパッタリングによって放出された炭化水素分子の再付着によって起こることを示した．また，内側と外側の垂直ターゲットの損耗の非対称性について議論した． (Keyword) plasma-surface interaction / divertor plasma / divertor surface / physical sputtering / chemical sputtering (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.42.3623 (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1390001206254368384 ● Summary page in Scopus @ Elsevier: 2-s2.0-0042739625 (DOI: 10.1143/JJAP.42.3623, CiNii: 1390001206254368384, Elsevier: Scopus)
56.	Retsuo Kawakami and Kaoru Ohya : Simulation Study of Material Mixing Process on Tungsten Surfaces at Elevated Temperatures due to Boundary Plasma Exposure and Its Influence on Plasma Wall Interactions, Journal of Nuclear Materials, Vol.313-316, 107-111, 2003. (Summary) 動的なプラズマ壁相互作用コードEDDYを用いて，プラズマに照射されたタングステンと炭素の材料混成について研究した．TEXTOR-94で観測されたW表面のW-C 混成層の変化と計算結果の比較はよく一致したことより，この変化がW表面への堆積炭素不純物の熱拡散のためであると考えられる．また，W-C混成層の化学損耗と放出されたCD4分子の輸送過程も調べた． (Link to Publication Site) ● Publication site (DOI): 10.1016/S0022-3115(02)01378-8 (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1016/S0022-3115(02)01378-8 (DOI: 10.1016/S0022-3115(02)01378-8)
57.	Kaoru Ohya and Retsuo Kawakami : Dynamic Behavior of Sputtering of Tungsten Implanted in Carbon, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.40, No.12, 6965-6971, 2001. (Summary) 炭素への高粒子束タングステンイオンの照射によって起こるスパッタ率の時間的な振動現象について，動的シミュレーションコードを用いて研究した．低原子番号材料に注入された高原子番号粒子の深さ分布の変化に起因する現象であり，材料温度による深さ分布の変化の影響についても調べた． (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.40.6965 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0035710343 (DOI: 10.1143/JJAP.40.6965, Elsevier: Scopus)
58.	Retsuo Kawakami and Kaoru Ohya : Computer Simulation Study on Incident Fluence Dependence of Ion Reflection and Sputtering Processes from Layered and Mixed Materials, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.40, No.11, 6581-6588, 2001. (Summary) 炭素(C)バルクとタングステン(W)上に堆積した炭素層，C上に堆積したW層とWxC1-x混合材料上のW層について，Dイオン反射とスパッタリングの照射量依存性を動的プラズマ壁相互作用コードEDDYを用いて研究した．層状材料において，反射率とスパッタ率の照射量による変化は層の厚さに依存する．Cのスパッタ率は照射ともに減少するが，D反射率とWのスパッタ率は増加する． (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0036149585 (Elsevier: Scopus)
59.	Retsuo Kawakami and Kaoru Ohya : Simulation Study on Erosion and Redeposition at Tungsten Surface Exposed to Deuterium Plasma Including Carbon Impurity, Journal of Plasma and Fusion Research, Vol.77, No.9, 894-902, 2001. (Summary) 炭素不純物を含む重水素プラズマに晒されたタングステン表面の損耗と再堆積を動的プラズマ表面相互作用コードEDDYを用いて研究した．計算結果を実験データ(TEXTOR-94プラズマ照射後のW試験リミタの端部におけるC堆積領域の明瞭な境界)と比較した．明瞭な境界は，プラズマ中の不純物炭素濃度と端部の低いプラズマ温度に関係し，照射量の増加とともに形成される．
60.	Retsuo Kawakami and Kaoru Ohya : Comparison between Static and Dynamic Simulations of Ion Reflection and Sputtering from Layered Materials, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.40, No.9A, 5399-5406, 2001. (Summary) 動的プラズマ壁相互作用コードEDDYを用いて，低イオン照射量と高イオン照射量における二層材料のイオン反射とスパッタリングの違いを研究した．低照射量では，上層の厚さの増加によってそれらは急激に変化するが，高照射量では，上層の大きい損耗とリコイルインプランテーションの効果によりゆるやかな変化を示す． (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0035456743 (Elsevier: Scopus)
61.	Kaoru Ohya and Retsuo Kawakami : A Modified EDDY Code to Simulate Erosion/Redeposition of Carbon Target in an ITER-FEAT Divertor, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.40, No.9A, 5424-5430, 2001. (Summary) 核融合装置内のプラズマ壁相互作用の解析のため開発しているEDDY計算機シミュレーションコードに化学スパッタリングによる壁材料の損耗と放出炭化水素分子のプラズマ中の原子分子過程を追加した．炭化水素分子の再付着も考慮した正味の損耗量を評価できるようになり，ITER-FEATのダイバータ黒鉛ターゲットの損耗分布の評価を行った． (Link to Publication Site) ● Publication site (DOI): 10.1143/JJAP.40.5424 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0035456744 (DOI: 10.1143/JJAP.40.5424, Elsevier: Scopus)
62.	Kaoru Ohya, Retsuo Kawakami, Tetsuo Tanabe, Motoi Wada, Tadashi Ohgo, Volker Philipps, Albrecht Pospieszczyk, Alexander Huber, Marek Rubel, Genadij Sergienko and Nobuaki Noda : Simulation calculations of mutual contamination between tungsten and carbon and its impact on plasma surface interactions, Journal of Nuclear Materials, Vol.290-293, 303-307, 2001. (Summary) TEXTOR-94トカマクの周辺プラズマに挿入したタングステン·炭素ツイン試験リミタ近傍の不純物発光分布を実機条件でのEDDYコード計算と比較した．特に，タングステンと炭素材を核融合炉内で併用した場合の相互汚染の進展とプラズマ壁相互作用への影響について研究した． (Link to Publication Site) ● Publication site (DOI): 10.1016/S0022-3115(00)00632-2 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-4243452726 (DOI: 10.1016/S0022-3115(00)00632-2, Elsevier: Scopus)
63.	Retsuo Kawakami, Nobuyasu Saji and Kaoru Ohya : Simulation Study on Influence of Mutual Contamination on Ion Reflection and Sputtering from Tungsten and Carbon Materials, Journal of Plasma and Fusion Research SERIES, Vol.3, 332-336, 2000. (Summary) 動的プラズマ壁相互作用EDDYコードを用いて，ダイバータ内でタングステンと炭素を同時に使用したときの相互汚染について研究した．W上に堆積したC堆積はWのイオン反射率とスパッタ率を減少させる一方，C上に堆積したW堆積は，逆に反射率を増加し，させて，Cのスパッタリングを減少させる．
64.	Kaoru Ohya, Retsuo Kawakami and Hiroshi Aizawa : Time Evolution of Surface Topography of Plasma Facing Materials with Non-Uniform Impurity Deposition, Journal of Plasma and Fusion Research, SERIES, No.3, 288-292, 2000. (Summary) 高粒子束プラズマに照射された材料の表面凹凸の時間発展を計算するシミュレーションコードを開発した．表面にプラズマ炭素不純物が正弦波状に堆積したボロン被膜の表面変化の計算に適用し，炭素の非一様な堆積によって表面の平均的損耗が大きく変化することを示した．
65.	Kaoru Ohya, Retsuo Kawakami, Tetsuo Tanabe, Motoi Wada, Tadashi Ohgo, Volker Philipps, Albrecht Pospieszczyk, Bernd Schweer, Alexander Huber, Marek Rubel, Jana Seggern von and Nobuaki Noda : Simulation study of carbon and tungsten deposition on W/C twin test limiter in TEXTOR-94, Journal of Nuclear Materials, Vol.283-287, 1182-1186, 2000. (Summary) タングステンと炭素で構成した試験リミタをTEXTOR-94トカマクの周辺プラズマに晒した時のリミタの不純物放出と表面変化について，動的プラズマ壁相互作用コードEDDYを用いて研究した．実験で観測されたリミタのW側のWI発光分布はWの物理スパッタリング，CII発光分布はCイオンの反射と再堆積Cの物理スパッタリングによって説明できた． (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-4243755888 (Elsevier: Scopus)
66.	Retsuo Kawakami, Nobuyasu Saji and Kaoru Ohya : Study of Impurity Release from a W-C Twin Test Limiter Exposed to TEXTOR-94, Bulletin of Faculty of Engineering, The University of Tokushima, No.45, 75-83, 2000.
67.	Retsuo Kawakami, Kaoru Ohya and Jun Kawata : Calculation of Impurity Release from Walls and its Transport in Edge Plasmas, Contributions to Plasma Physics, Vol.40, No.3, 519-524, 2000. (Summary) プラズマ壁相互作用コードEDDYを用いて相互汚染下での(つまりW上にCが堆積，またはC上にWが堆積)WとCの相互汚染下での損耗と不純物再堆積過程を研究した．スパッタ炭素原子の再堆積はW表面の損耗率の低下を引き起こし，C(W)表面に堆積したW(C)は実質的にはDと不純物イオンの反射係数を増加(わずかに減少)させる． (Link to Publication Site) ● Publication site (DOI): 10.1002/1521-3986(200006)40:3/4<519::AID-CTPP519>3.0.CO;2-I (Link to Search Site for Scientific Articles) ● Search Scopus @ Elsevier (DOI): 10.1002/1521-3986(200006)40:3/4<519::AID-CTPP519>3.0.CO;2-I (DOI: 10.1002/1521-3986(200006)40:3/4<519::AID-CTPP519>3.0.CO;2-I)
68.	Kazumasa Hara, Ichiro Mori, Retsuo Kawakami and Kikuo Tominaga : Anomalous Relaxation and Stopping Power for Electron Beam in Beam-Plasma System, Journal of Plasma and Fusion Research SERIES, Vol.2, 376-380, 1999. (Summary) ビームプラズマ放電において，電子ビームはソリトンを放射するが，そのとき特異な緩和や電子素子能をしめすことが理論的に解析されている．計算結果は実験と比較されている．ビーム電子がイオン波の急峻な負の波面，すなわち，減速場，に衝突するときソリトンを放射する．これはコヒーレントな相互作用を介しておこなわれる．
69.	Makoto Ogawa, Ichiro Mori, Retsuo Kawakami and Kikuo Tominaga : Nonlinear Dispersion Relation for Beam-Excited Plasma, Journal of Plasma and Fusion Research SERIES, Vol.2, 371-375, 1999. (Summary) ビームプラズマ放電における崩落ソリトンの発生について実験的に研究史，それに対する非線形理論と分散関係について調べた．ガウス型グリーン関数を用いて非線形分散関係を得ることに成功した．さらに，この非線形分散関係を数値的に解くことを試みた．結果として，ωーk面に2つの曲線が得られ，これらが電子ビームの分散である．これらの曲線は線形の分散から導かれる解に非常によく似ている．
70.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami and Kikuo Tominaga : Structure of Multi-dimensional Soliton and Generation of Caviton in the Nonlinear Beam-Plasma System, Journal of Plasma and Fusion Research SERIES, Vol.2, 363-367, 1999. (Summary) ソリトンとキャビトンの生成機構に関する実験結果を解析した．ソリトンが発生する際には，イオン花見(キャビトン)を伴っている．ガウス関数型グリーン関数に関して，繰り込み理論によって電子ビームによって作られる孤立波を描いた．すなわち，電子同士がフォノンを介してコヒーレントな相互作用をすることでソリトンを放射する．
71.	Retsuo Kawakami, Ichiro Mori and Toshifumi Morimoto : Nonlinear Waves Observed in an Electron Beam-Plasma, Journal of Plasma and Fusion Research SERIES, Vol.2, 368-370, 1999.
72.	Retsuo Kawakami, Jun Kawata and Kaoru Ohya : Simultaneous Calculation of Reflection, Physical Sputtering and Secondary Electron Emission from a Metal Surface Due to Impact of Low-Energy Ions, Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.38, No.10, 6058-6065, 1999. (Summary) アルミニウム中での10eVから10keVの低エネルギーイオン(原子番号1から17)の弾性，非弾性衝突過程を同時に取り扱う計算機シミュレーションコードを開発した．そのコードは励起電子の電子カスケードと反跳原子の衝突カスケードの計算を行い，固体からのイオン反射，物理スパッタリング，二次電子放出の計算ができる．
73.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami and Kikuo Tominaga : Anomalous Electronic stopping and relaxation in the plasma and application of its theory to beam-surface interaction, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.153, No.1-4, 31-35, 1999. (Summary) 電子ビームをガスプラズマに注入した場合の電子的青銅機構の新しい理論を提案し，高速家電粒子と固体表面のコヒーレントな相互作用理論に適用した．実験はミラー磁界を持つビームプラズマ装置でおこなった．電子ビームがアルゴンガスを電離させるような電子ビームプラズマ系を考える場合，電子励起を伴う非弾性散乱による電子的素子能をけいさんした．ビームのエネルギーの緩和が観測されたが，これは理論の予測とよく一致する． (Link to Publication Site) ● Publication site (DOI): 10.1016/S0168-583X(99)00206-2 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0033516116 (DOI: 10.1016/S0168-583X(99)00206-2, Elsevier: Scopus)
74.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami and Kikuo Tominaga : Cascade Collision of Fe-Atom Caused by Low Energy He-Incidence and Effect of Temperature to the Type of Defect, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.153, No.1-4, 126-129, 1999. (Summary) 分子運動力学モデルシミュレーション法によって低エネルギーヘリウム原子が体心立方格子の鉄結晶に注入されたときにフォーカシングカスケード衝突が観測された．また，格子温度と欠陥の型が関連していることについて議論した．ヘリウム原子と鉄原子の質量比が大きいにもかかわらず，非常に小さいエネルギーで格子欠陥が生ずることを示した． (Link to Publication Site) ● Publication site (DOI): 10.1016/S0168-583X(99)00210-4 (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-0033516104 (DOI: 10.1016/S0168-583X(99)00210-4, Elsevier: Scopus)
75.	Kawata Jun, Ohya Kaoru and Retsuo Kawakami : Monte Carlo Simulation of Ion Reflection, Physical Sputtering and Kinetic Electron Emission from Solid Due to Ion Impact, Bulletin of Takuma National College of Technology, No.27, 73-88, 1999.
76.	Takafumi Miyazaki, Retsuo Kawakami and Nobuaki Ikuta : Variation of Ion Transport Properties under Electric Field with Mass Ratios, Journal of the Physical Society of Japan, Vol.67, No.4, 1260-1272, 1998.
77.	Retsuo Kawakami, Shinya Okuda, Takafumi Miyazaki and Nobuaki Ikuta : Variation of Reduced Mobilities of Ions in Gases under 12-4 Potentials, Journal of the Physical Society of Japan, Vol.65, No.5, 1270-1276, 1996.
78.	Shinya Okuda, Takafumi Miyazaki, Retsuo Kawakami and Nobuaki Ikuta : Ion Transport Properties in Model Gases Based on `A dot r^{-n`} Type Single Potential, Journal of the Physical Society of Japan, Vol.64, No.8, 2868-2885, 1995.

Review, Commentary:

1.	Retsuo Kawakami and Akihiro Shirai : 医療・食品・環境分野で注目される抗菌技術:光触媒による殺菌と食品鮮度保持, Journal of Antibacterial and Antifungal Agents, Vol.46, No.7, 321-327, Jul. 2018. (Link to Search Site for Scientific Articles) ● CiNii @ National Institute of Informatics (CRID): 1520572359244390016 (CiNii: 1520572359244390016)
2.	松下俊雄 and Retsuo Kawakami : UV-LED光触媒技術と鮮度保持への応用, 電気計算, Vol.10, 30-33, Sep. 2015.
3.	Retsuo Kawakami, Yoshihiro Yamagami, Kikuo Tominaga, Atsumi Hattori, Seishi Kitayama and Yasuo Ohno : デジタル化・ネットワーク化時代の電気電子工学学生実験, 徳島大学高度情報化基盤センター「広報」, Vol.12, 57-60, Feb. 2005.

Proceeding of International Conference:

1.	Makino Yuta, Akihiro Shirai, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Retsuo Kawakami : Bacterial Inactivation of Pt-doped Rutile TiO2 Nanoparticles Annealed with Low-Temperature O2 Plasma, Proceedings of International Symposium of Dry Process 2023, 173-174, Nagoya, Nov. 2023.
2.	Ohashi Koichi, Sogawa Ryutaro, Hashimura Nene, Rie Mukai and Retsuo Kawakami : Increased Polyphenol Content of Harvested Onions Irradiated with Low-Temperature Air Plasma Jet at Quasi-Atmospheric Pressure, Proceedings of International Symposium of Dry Process 2023, 171-172, Nagoya, Nov. 2023.
3.	Ichimura Atsunori, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Retsuo Kawakami : Photocatalytic Activity of g-C3N4 Nanosheets Grown by High-Pressure Annealing, Proceedings of International Symposium of Dry Process 2023, 157-158, Nagoya, Nov. 2023.
4.	Matsumoto Takumi, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Retsuo Kawakami : Photocatalytic Activity Enhancement of Titanium Dioxide Nanoparticles via High-Pressure Annealing with Polyethylene Glycol, Proceedings of International Symposium of Dry Process 2023, 155-156, Nagoya, Nov. 2023.
5.	Miyaji Yuki, Matsumoto Takumi, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Retsuo Kawakami : Photocatalytic Characteristics of TiO2/Au/TiO2/Au Stacked Nanostructure Induced by Ultraviolet and Visible light Irradiation, Proceedings of International Symposium of Dry Process 2023, 125-126, Nagoya, Nov. 2023.
6.	Makino Yuta, Retsuo Kawakami, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Takashi Mukai : Atmospheric-Pressure Low-Temperature O2 Plasma-Assisted Annealing on Visible-Light-Induced Photocatalytic Activity of Pt-doped Rutile TiO2 Nanoparticles, Proceedings of International Symposium of Dry Process 2022, 125-126, Osaka, Nov. 2022.
7.	Nomoto Kazuki, Izumi Takuto, Mutsumi Aihara, Takagi Kousuke, Suzuki Misato, Matsumura Takumi, Akihiro Shirai, Takashi Mukai and Retsuo Kawakami : Damage-Less Microbial Inactivation of Plant Nutrient Solutions Irradiated with Atmospheric-Pressure Low-Temperature Air Plasma Jets, Proceedings of International Symposium of Dry Process 2022, 127-128, Osaka, Nov. 2022.
8.	Matsumura Takumi, Sogawa Ryutaro, Hashimura Nene, Ohashi Koichi, Rie Mukai and Retsuo Kawakami : Effects of Quasi-Atmospheric-Pressure Low-Temperature Air Plasma Jet Irradiation on Increasing Minerals in Fresh Food, Proceedings of International Symposium of Dry Process 2022, 123-124, Osaka, Nov. 2022.
9.	Matsumoto Takumi, Retsuo Kawakami, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Takashi Mukai : Polyethylene Glycol Doping Effects on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles, Proceedings of International Symposium of Dry Process 2022, 101-102, Osaka, Nov. 2022.
10.	Mimoto Yuki, Retsuo Kawakami, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Takashi Mukai : Nonequilibrium Atmospheric-Pressure O2 Plasma-Assisted Annealing Effect on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles, Proceedings of International Symposium of Dry Process 2021, 131-132, Tokyo, Nov. 2021.
11.	Retsuo Kawakami, Mimoto Yuki, Akihiro Shirai, Shin-ichiro Yanagiya, Niibe Masahito, Nakano Yoshitaka and Takashi Mukai : Photobactericidal Activity of Anatase Titanium Dioxide Nanoparticles Annealed with the Assistance of Nonequilibrium Atmospheric-Pressure Oxygen Plasma, Proceedings of International Symposium of Dry Process 2021, 127-128, Tokyo, Nov. 2021.
12.	Izumi Takuto, Aihara Mutsumi, Retsuo Kawakami, Akihiro Shirai, Urakami Tomona, Katsuyuki Miyawaki and Takashi Mukai : Bactericidal Effects of Nonequilibrium Atmospheric-Pressure Plasma Jet on Hydroponic Nutrient Solutions, Proceedings of International Symposium of Dry Process 2021, 129-130, Tokyo, Nov. 2021.
13.	Retsuo Kawakami, Hirofumi Koide, Yuki Yoshitani, Shin-ichiro Yanagiya, Toshihiro Okamoto, Masanobu Haraguchi, Akihiro Furube, Masahito Niibe, Yoshitaka Nakano, Chisato Azuma and Takashi Mukai : Photocatalytic Characteristics of Au/TiO2/Au Nanostructure Induced by Ultraviolet Irradiation, Proceedings of 15th International Symposium of Sputtering & Plasma Processes, 146-148, Kanazawa, Jun. 2019.
14.	Yoshitani Yuki, Retsuo Kawakami, Koide Hirofumi, Takami Naoki, Niibe Masahito, Nakano Yoshitaka, Azuma Chisato and Mukai Takashi : Effect of Atmospheric-Pressure O2 Plasma-Assisted Annealing on Photocatalytic Activity of TiO2 Nanoparticles, Proceedings of International Symposium of Dry Process 2018, 255-256, Nagoya, Nov. 2018.
15.	Retsuo Kawakami, Yoshitani Yuki, Mitani Kimiaki, Takami Naoki, Koide Hirofumi, Sugimoto Norihiro, Niibe Masahito, Nakano Yoshitaka, Azuma Chisato and Mukai Takashi : Hydrophilic Modification of Polypropylene Film Surfaces Treated by Atmospheric-Pressure Air Plasma Jet, Proceedings of International Symposium of Dry Process 2018, 253-254, Nagoya, Nov. 2018.
16.	Toshihiko Takahata, Shin-ichiro Yanagiya, Yuuki Yoshitani, Retsuo Kawakami and Akihiro Furube : High optical absorbance multilayer film of titanium dioxide and gold, 23rd MicroOptics Conference (MOC2018), Taipei, No.P-80, Taipei, Oct. 2018.
17.	Masahito Niibe, Ryo Tanaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai : Surface Structure Analysis of AlGaN Thin Films Damaged by Oxygen and Nitrogen Plasmas, The 8th International Symposium on Surface Science (ISSS-8), Tsukuba, Oct. 2017.
18.	Yoshitaka Nakano, Retsuo Kawakami and Masahito Niibe : Generation Behavior of Electrical Damage Introduced into n-GaN Films by CF4 Plasma Treatments, 29th International Conference on Defects in Semiconductors (ICDS), Matsue, Aug. 2017.
19.	Retsuo Kawakami, Kengo Fujimoto, Masahito Niibe, Yuma Araki, Yoshitaka Nakano and Takashi Mukai : TiO2 Thin Film Surfaces Treated by O2 Plasma in Dielectric Barrier Discharge with Assistance of Heat Treatment, Proceedings of 14th International Symposium of Sputtering & Plasma Processes, 274-277, Kanazawa, Jul. 2017.
20.	Yoshitaka Nakano, Masahito Niibe and Retsuo Kawakami : Damage Introduced into n-GaN Films by CF4 Plasma Treatments, 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2017) and 10th Interational Conference on Plasma-Nano Technology & Science (IC-PLANTS2017), Aichi, Mar. 2017.
21.	Yoshitaka Nakano, Masahito Niibe and Retsuo Kawakami : Electrical damage in n-GaN films treated by CF4 plasma, Proceedings of International Symposium of Dry Process 2016, 73-74, Sapporo, Nov. 2016.
22.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai : Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface, Proceedings of the 43rd International Symposium on Compound Semiconductors (ISCS2016), MoP-ISCS-096_1-MoP-ISCS-096_2, Toyama, Jun. 2016.
23.	Yoshitaka Nakano, Masahito Niibe and Retsuo Kawakami : Electrical Damage Investigation of n-GaN Films Treated by CF4 Plasma, Proceedings of the 43rd International Symposium on Compound Semiconductors (ISCS2016), MoP-ISCS-LN-4_1-MoP-ISCS-LN-4_2, Toyama, Jun. 2016.
24.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Chisato Azuma and Takashi Mukai : Anatase TiO2 Thin Films Grown by Facing-Target Reactive Sputtering and Its Impact on Photocatalytic Activity, Proceedings of International Symposium of Dry Process 2015, 125-126, Awaji, Nov. 2015.
25.	Yoshitaka Nakano, Retsuo Kawakami, Masahito Niibe, Tatsuo Shirahama and Takashi Mukai : A Relation between Pinch-Off Voltages and Deep-Level Defects in AlGaN/GaN Hetero-Structures Treated by CF4 Plasma, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, Sep. 2015.
26.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai : Comparison between Surface Characteristics of Titanium Oxide Thin Films Treated with N2 Dielectric Barrier Discharge Plasma and Annealed in N2 Gas, Proceedings of 13th International Symposium of Sputtering & Plasma Processes, 63-66, Kyoto, Jul. 2015.
27.	Yoshitaka Nakano, Chen Miao-Gen, Daisuke Ogawa, Keiji Nakamura, Retsuo Kawakami and Masahito Niibe : Generation Behavior of Deep-Level Defects in Ar+-Irradiated GaN, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2015) and 8th Interational Conference on Plasma-Nano Technology & Science (IC-PLANTS2015), Nagoya, Mar. 2015.
28.	Masahito Niibe, Takuya Kotaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai : Etching Damage Analysis of n-GaN Crystals Etched with N2-Plasma Using Soft X-Ray Absorption Spectroscopy, Proceedings of International Symposium of Dry Process 2014, 75-76, Tokyo, Nov. 2014.
29.	Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Tatsuo Shirahama, Shodai Hirai and Takashi Mukai : Morphological and Compositional Changes in AlGaN Surfaces Etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas, Proceedings of International Symposium of Dry Process 2014, 69-70, Tokyo, Nov. 2014.
30.	Shodai Hirai, Masahito Niibe, Tatsuo Shirahama, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai : Surface Analysis of Thick AlGaN Films Treated by Ar and CF4 Plasma Etching, The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. 2014.
31.	Masahito Niibe, Takuya Kotaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai : Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-ray Absorption Spectroscopy, The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. 2014.
32.	Keiji Sano, Masahito Niibe, Retsuo Kawakami and Yoshitaka Nakano : Spectral Recovery of Etching Damage of TiO2 Thin Films Observed in XAS Spectra, The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. 2014.
33.	Niibe Masahito, Kotaka Takuya, Retsuo Kawakami, Nakano Yoshitaka and Mukai Takashi : Damage Analysis of N2 Plasma-Etched n-GaN Crystal, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014), Nagoya, Mar. 2014.
34.	Retsuo Kawakami, Niibe Masahito, Takeuchi Hideo, Shirahama Tatsuo, Konishi Masashi, Mori Yuta, Yamada Tetsuya and Tominaga Kikuo : Damage Characteristics of 6H-SiC Surfaces Etched Using Capacitively-Coupled Helium Plasmas Driven by a Radio Frequency Power, Proceedings of 12th International Symposium of Sputtering & Plasma Processes, 255-258, Kyoto, Jul. 2013.
35.	Retsuo Kawakami, Niibe Masahito, Nakano Yoshitaka, Konishi Masashi, Shirahama Tatsuo, Tominaga Kikuo and Mukai Takashi : Damage Characteristics of n-GaN Thin Film Surfaces Etched by Ultraviolet Light-Assisted Helium Plasmas, The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2010), Kanazawa, Jun. 2013.
36.	Retsuo Kawakami, Konishi Masashi, Mori Yuta, Shirahama Tatsuo, Yamada Tetsuya, Tominaga Kikuo, Niibe Masahito, Nakano Yoshitaka and Mukai Takashi : Damage Characteristics of n-GaN Thin Film Surfaces Etched by N2 Plasmas, The 40th International Symposium on Compound Semiconductors, Kobe, May 2013.
37.	Nakano Yoshitaka, Nakamura Keiji, Niibe Masahito, Retsuo Kawakami, Ito Noriyoshi, Kotaka Takuya and Tominaga Kikuo : Effect of UV irradiation on Ar-Plasma etching characteristics of GaN, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), Nagoya, Jan. 2013.
38.	Retsuo Kawakami, Niibe Masahito, Nakano Yoshitaka, Konishi Masashi, Mori Yuta, Takeichi Atsushi, Tominaga Kikuo and Mukai Takashi : Damage Characteristics of p-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas, Proceedings of International Symposium of Dry Process 2012, 133-134, Tokyo, Nov. 2012.
39.	Niibe Masahito, Kotaka Takuya, Sano Keiji, Retsuo Kawakami, Tominaga Kikuo and Nakano Yoshitaka : Etching Damage Analysis of TiO2 Thin Film with Soft X-Ray Absorption Spectroscopy, 25th International Conference on Atomic Collisions in Solids (ICACS-25), 227, Kyoto, Oct. 2012.
40.	Retsuo Kawakami, Niibe Masahito, Takeuchi Hideo, Konishi Masashi, Mori Yuta, Shirahama Tatsuo, Yamada Tetsuya and Tominaga Kikuo : SiC Surface Damage Originating from Synergy Effect of Ar Plasma Ion and Plasma-Induced Ultraviolet Light Irradiations, 25th International Conference on Atomic Collisions in Solids (ICACS-25), 117, Kyoto, Oct. 2012.
41.	Nakano Yoshitaka, Nakamura Keiji, Niibe Masahito, Retsuo Kawakami, Ito Noriyoshi, Kotaka Takuya and Tominaga Kikuo : Effect of UV Irraiation on Ar-Plasma Etching of GaN, International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Oct. 2012.
42.	Retsuo Kawakami, Niibe Masahito, Nakano Yoshitaka, Konishi Masashi, Mori Yuta, Shirahama Tatsuo, Yamada Tetsuya and Tominaga Kikuo : Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas, 11th Asia-Pacific Conference on Plasma Science and Technology & 25th Symposium on Plasma Science fro Materials (11th APCPST & 25th SPSM), 289, Kyoto, Oct. 2012.
43.	Niibe Masahito, Kotaka Takuya, Retsuo Kawakami, Nakano Yoshitaka, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Damage Analysis of n-GaN Crystals Etched with He and N2 Plasma, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012), Nagoya, Mar. 2012.
44.	Nakano Yoshitaka, Retsuo Kawakami, Niibe Masahito, Takeichi Atsushi, Inaoka Takeshi and Tominaga Kikuo : Photoluminescence Study of Plasma-Induced Etching Damages in GaN, 2011 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Dec. 2011.
45.	Retsuo Kawakami, Niibe Masahito, Takeichi Atsushi, Mori Yuta, Konishi Masashi, Kotaka Takuya, Matsunaga Fumihiko, Takasaki Toshihide, Kitano Takanori, Miyazaki Takahiro, Inaoka Takeshi and Tominaga Kikuo : Characteristics of TiO2 Thin Film Surfaces Treated by Dielectric Barrier Discharge Helium and Air Plasmas, Proceedings of International Symposium of Dry Process 2011, 75-76, Kyoto, Nov. 2011.
46.	Kotaka Takuya, Niibe Masahito, Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Damage analysis of gallium nitride crystals etched by He and Ar plasma, Proceedings of 11th International Symposium of Sputtering & Plasma Processes, 73-76, Kyoto, Jul. 2011.
47.	Takeichi Atsushi, Retsuo Kawakami, Niibe Masahito, Konishi Masashi, Mori Yuta, Kodama Munehisa, Kotaka Takuya, Inaoka Takeshi and Tominaga Kikuo : Capacitively Coupled Radio Frequency Helium Plasma Treatment Effect on TiO2 Thin Film Surfaces, Proceedings of 11th International Symposium of Sputtering & Plasma Processes, 584-61, Kyoto, Jul. 2011.
48.	Retsuo Kawakami, Takeichi Atsushi, Niibe Masahito, Konishi Masashi, Mori Yuta, Kodama Munehisa, Kotaka Takuya, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Capacitively Coupled Radio Frequency Nitrogen Plasma Etch Damage to n-Type Gallium Nitride, Proceedings of 11th International Symposium of Sputtering & Plasma Processes, 54-57, Kyoto, Jul. 2011.
49.	Niibe Masahito, Kotaka Takuya, Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Damage Analysis of Plasma-etched n-GaN Crystal Surface by N-K Absorption Spectroscopy, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011), Nagoya, Mar. 2011.
50.	Retsuo Kawakami, Takeichi Atsushi, Niibe Masahito, Inaoka Takeshi and Tominaga Kikuo : Capacitively Coupled Radio Frequency Helium Plasma Etch Damage to TiO2 Thin Film Surfaces, Proceedings of International Symposium of Dry Process 2010, 171-172, Tokyo, Nov. 2010.
51.	Retsuo Kawakami, Niibe Masahito, Fukudome Toshiaki, Takeichi Atsushi, Inaoka Takeshi and Tominaga Kikuo : Effect of DBD Air Plasma Treatment on TiO2 Thin Film Surfaces, The Third International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2010), Toyama, Jun. 2010.
52.	Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo, Niibe Masahito, Mukai Takashi, Takeichi Atsushi and Fukudome Toshiaki : Etch-induced Damage Characteristics of n-GaN Surfaces by Capacitively Coupled Radio Frequency He and Ar Plasmas, The 37th International Symposium on Compound Semiconductors, 41, Kagawa, May 2010.
53.	Niibe Masahito, Maeda Yoshie, Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo and Mukai Takashi : Surface Analysis of n-GaN Crystal Damaged by RF-plasma-etching with Ar, Kr and Xe Gases, The 37th International Symposium on Compound Semiconductors, 42, Kagawa, May 2010.
54.	Retsuo Kawakami, Inaoka Takeshi, Tominaga Kikuo, Niibe Masahito, Mukai Takashi, Takeichi Atsushi and Fukudome Toshiaki : Synergy Effect of Xenon Plasma Ions and Ultraviolet Lights on GaN Etch Surface Damage and Modification, 16th International Conference on Surface Modification of Materials by Ion Beams, 190, Tokyo, Sep. 2009.
55.	Nouda Takahiro, Tominaga Kikuo, Okada Kenji, Murao Ken-ichi, Retsuo Kawakami, Kusaka Kazuya and Hanabusa Takao : Deposition and characterization of TiO2 thin films by rf-dc coupled reactive magnetron sputtering, Proceedings of 10th International Symposium of Sputtering & Plasma Processes, 479-482, Kanazawa, Jul. 2009.
56.	Retsuo Kawakami, Kikuo Tominaga, Okada Kenji, Nouda Takahiro, Takeshi Inaoka, Takeichi Atsushi, Fukudome Toshiaki and Murao Kenichi : Etch Damage Characteristics of TiO2 Thin Films by Capacitively Coupled RF Ar Plasmas, Proceedings of 10th International Symposium of Sputtering & Plasma Processes, 500-503, Kanazawa, Jul. 2009.
57.	Retsuo Kawakami, Inaoka Takeshi, Kikuo Tominaga and Mukai Takashi : Effects of Capacitively Coupled Radio Frequency Krypton and Argon Plasmas on Gallium Nitride Etching Damage, Proceedings of International Symposium of Dry Process 2008, 187-188, Tokyo, Nov. 2008.
58.	Okada Kenji, Kikuo Tominaga, Ohokura Sinya, Nouda Takahiro and Retsuo Kawakami : Deposition of TiO2 films by a RF-DC Coupled Magnetron Sputtering, 4th Vacuum and Surface Sciences Conference of Asia and Australia, 217, Matsue, Oct. 2008.
59.	Retsuo Kawakami, Inaoka Takeshi, Kikuo Tominaga, Mukai Takashi, Hiraoka Kensaku, Kudo Yuki and Koide Kuniyuki : Model Analysis of Preferential Etching of III-V Nitrides by Capacitively Coupled Radio Frequency Argon Plasmas, 4th Vacuum and Surface Sciences Conference of Asia and Australia, 187, Matsue, Oct. 2008.
60.	Okada Kenji, Kikuo Tominaga, Retsuo Kawakami, Ohkura Shinya, Kazuya Kusaka and Takao Hanabusa : Deposition of photocatalytic tiO2 films by planar magnetron sputtering system with opposed Ti targets, 14th International Conference on Solid Films and Surfaces, 331-332, Dublin, Jul. 2008.
61.	Retsuo Kawakami, Inaoka Takeshi and Mukai Takashi : Synergy effect of Particle and Ultraviolet Radiations from Capacitively Coupled RF Argon Plasmas on n-GaN Etching Damage, Proceedings of International Symposium of Dry Process, 181-182, Tokyo, Nov. 2007.
62.	Retsuo Kawakami and Inaoka Takeshi : Effect of Argon Plasma Etching Damage on Electrical Characteristics, Proceedings of 9th International Symposium of Sputtering & Plasma Processes, 391-394, Kanazawa, Jun. 2007.
63.	Retsuo Kawakami and Inaoka Takeshi : Analysis of GaN Etching Damage by Capacitively Coupled RF Ar Plasma Exposure, Proceedings of International Symposium of Dry Process, 63-64, Nagoya, Nov. 2006.
64.	Retsuo Kawakami : Simulation study of carbon impurity dynamics on reduced-activation ferritic/martensitic steel material at elevated temperatures under hydrogen exposure, 7th International Symposium on Fusion Nuclear Technology, 191, Tokyo, May 2005.
65.	Retsuo Kawakami : Simulation Study on Effects of Chemically Eroded Methane and Ethylene Molecules on Carbon Impurity Transport and Net Erosion of Carbon Materials, Joint Meeting of 14th Internaitional Toki Conference on Plasma Physics and Controlled Nuclear Fusion & 4th International Conference on Atomic and Molecular Data and Their Application, 73, Toki, Oct. 2004.
66.	Retsuo Kawakami and Mitani Takenori : Simulation Study on Influence of Chemically Eroded Higher Hydrocarbons on SOL Impurity Transport and Effect of Dynamical Material Mixing on Erosion/Deposition of Tungsten Surfaces Exposed to Plasma Boundary, 16th International Conference on Plasma Surface interactions in Controlled Fusion Devices, P1-29, Portland Maine, U.S.A., May 2004.
67.	Ueda Yoshio, Funabiki Takahisa, Shimada Tomohisa, Retsuo Kawakami and Nishikawa Masahiro : Effects of Carbon Impurity in Fusion Plasmas on Erosion of RAF First Wall, 11th International Conference on Fusion Reactor Materials, Kyoto, Dec. 2003.
68.	Shimada Tomohisa, Funabiki Takahisa, Retsuo Kawakami, Ueda Yoshio and Nishikawa Masahiro : Carbon Behavior on Tungsten Surface after Carbon and Hydrogen Mixed Beam Irradiation, 11th International Conference on Fusion Reactor Materials, Kyoto, Dec. 2003.
69.	Retsuo Kawakami, Shimada Tomohisa, Ueda Yoshio and Nishikawa Masahiro : Simulation Study of Dynamical Material Mixing on Tungsten Surfaces at Elevated Temperatures due to Hydrogen and Carbon Mixed Ion Beam Irradiation, 11th International Conference on Fusion Reactor Materials, Kyoto, Dec. 2003.
70.	Mitani Takenori, Retsuo Kawakami and Kuriu Syuhei : Simulation Study of Sputtering Erosion and Impurity Deposition on Carbon and Tungsten Surfaces Irradiated with Deuterium Plasmas Including Carbon Impurity, 11th International Conference on Fusion Reactor Materials, Kyoto, Dec. 2003.
71.	Retsuo Kawakami and Ohya Kaoru : Simulation Study of Material Mixing Process on Tungsten Surfaces at Elevated Temperatures due to Boundary Plasma Exposure and its Influence on Plasma Wall Interactions, 15th International Conference on Plasma Surface interactions in Controlled Fusion Devices, Gigu, May 2002.
72.	Kaoru Ohya and Retsuo Kawakami : Modeling of Erosion/Deposition in Fusion Devices, Japan-US Workshop on High Heat Flux Components and Plasma Surface Interactions for Next Fusion Devices, Osaka, Nov. 2000.
73.	Ohya Kaoru, Retsuo Kawakami, Tanabe Tetsuo, Wada Motoi, Ohgo Tadashi, Philipps Volker, Pospieszczyk Albrecht, Schweer Bernd, Huber Alexander, Rubel Marek, Seggern von Jana and Noda Nobuaki : Simulation Study of Carbon and Tungsten Deposition on W/C Twin Test Limiter in TEXTOR-94, 14th International Conference on Plasma Surface interactions in Controlled Fusion Devices, Vol.283 287, 1182-1186, Rosenheim, May 2000. (Link to Search Site for Scientific Articles) ● Summary page in Scopus @ Elsevier: 2-s2.0-4243755888 (Elsevier: Scopus)
74.	Retsuo Kawakami, Kaoru Ohya, Peter Wienhold, Marek Rubel and Jana von Seggern : Simulation Calculation for the Time-Evolution of Non-Uniform Impurity Erosion and Deposition on Surfaces of Plasma Facing Components, 14th International Conference on Plasma Surface interactions in Controlled Fusion Devices, Rosenheim, May 2000.
75.	Ohya Kaoru, Retsuo Kawakami and Aizawa Hiroshi : Time Evolution of Surface Topography of Plasma Facing Materials with Non-Uniform Impurity Deposition, 10th International Toki Conference on Plasma Physics and Controlled Nuclear Fusion, Toki, Jan. 2000.
76.	Retsuo Kawakami, Saji Nobuyasu and Ohya Kaoru : Simulation Study on Influence of Mutual Contamination on Ion Reflection and Sputtering from Tungsten and Carbon Materials, 10th International Toki Conference on Plasma Physics and Controlled Nuclear Fusion, Toki, Jan. 2000.
77.	Kaoru Ohya, Retsuo Kawakami and Jun Kawata : Simultaneous calculation of ion-induced kinetic electron emission and physical sputtering, --- a comparison between emission of electrons and atoms from solids ---, Proceedings of International Conference on on Atomic Collisions in Solids, Odense, Aug. 1999.
78.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami and Kikuo Tominaga : Detection of Particle-Like Wave-Packets by Using a Time of Flight Method of an Envelope Soliton, Proceedings of International Conference on on Phenomena in Ionized Gases, 73-74, Warsow, Jul. 1999.
79.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami and Kikuo Tominaga : Wave Coupling between an Envelope Soliton and an Ion Wave in a Nonlinear Beam-Plasma Interacting System, Proceedings of International Conference on Phenomena in Ionized Gases, 155-156, Warsow, Jul. 1999.
80.	Hara Kazumasa, Mori Ichiro, Retsuo Kawakami and Tominaga Kikuo : Anomalous Relaxation and Stopping Power for Electron Beam in Beam-Plasma System, 9th International Toki Conference on Plasma Physics and Controlled Nuclear Fusion --- New Frontiers in Plasma Physics, Toki, Dec. 1998.
81.	Ogawa Makoto, Mori Ichiro, Retsuo Kawakami and Tominaga Kikuo : Nonlinear Dispersion Relation for Beam-Excited Plasma, 9th International Toki Conference on Plasma Physics and Controlled Nuclear Fusion --- New Frontiers in Plasma Physics, Toki, Dec. 1998.
82.	Mori Ichiro, Morimoto Toshifumi, Retsuo Kawakami and Tominaga Kikuo : Structure of Multi-dimensional Soliton and Generation of Caviton in the Nonlinear Beam-Plasma System, 9th International Toki Conference on Plasma Physics and Controlled Nuclear Fusion --- New Frontiers in Plasma Physics, Toki, Dec. 1998.
83.	Retsuo Kawakami, Mori Ichiro and Morimoto Toshifumi : Nonlinear Waves Observed in an Electron Beam-Plasma, 9th International Toki Conference on Plasma Physics and Controlled Nuclear Fusion --- New Frontiers in Plasma Physics, Toki, Dec. 1998.
84.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami and Kikuo Tominaga : Coherent Structure Emitted by an Electron Beam in a Beam-Plasma System, Proceedings of International Conference on Phenomena in Ionized Gases, 266-267, Toulouse, Jul. 1997. (Summary) ビームプラズマ系で大振幅の高域混成波(ソリトン)が実験により発見された．キャリア周波数が約400MHzのコヒーレントな移送がHP-54542A-Ghzのシンクロスコープによって確認された．同時に，繰り込み法により，電子ビームにより作られる孤立波を記述することに理論的に成功した．そのなかで，応答の遅いイオンの存在が，電子ビームから波束かを放出することに必要であった．理論と実験の一致は良い．
85.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami and Kikuo Tominaga : Multi-Dimensional Soliton and its Experimental Stability, Proceedings of International Conference on Physics of Dusty Plasmas, 543-546, Goa, Oct. 1996. (Summary) 本論文は，電子ビームプラズマ中で観測されるソリトンに関して，実験的観測法やふるまいについて説明している．また，どのような条件で安定に存在できるかについても議論している．
86.	Ichiro Mori, Toshifumi Morimoto, Retsuo Kawakami, Shin Hasebe and Kikuo Tominaga : Multi-Dimensional Solitons and its Contribution to Beam-Plasma Discharge, Proceedings of International Conference on Plasma Physics, 766-769, Nagoya, Sep. 1996. (Summary) 本論文は，プラズマ中のソリトンに関する実験結果をまとめたもので，ソリトンがプラズマと強く相互作用していおり，プラズマ中に非常に強い電界が発生していることを見出し，これがソリトンの振る舞いをすることを見出した．ガス圧の増加やプラズマ密度の増加によって，ソリトンの振幅強度が小さくなり，横長の形状に変化する．数値解析で非線形シュレディンガー方程式を解くと，実験結果とよく一致することを示した．

Proceeding of Domestic Conference:

1.	Retsuo Kawakami, Yuta Makino, Akihiro Shirai, Shin-ichiro Yanagiya, 中野由祟 and 新部正人 : 大気圧プラズマ支援アニーリングした白金ドープ酸化チタンナノ粒子の酸化分解力と殺菌力, 令和6年電気学会全国大会, 95, Mar. 2024.
2.	大橋孝一, SOGAWA Ryutaroh, HASHIMURA Nene, Rie Mukai and Retsuo Kawakami : 大気圧低温空気プラズマジェット照射後のタマネギのポリフェノール含有量の増加現象, 2023年第84回応用物理学会秋季学術講演会, 07-052, Sep. 2023.
3.	宮路裕貴, Retsuo Kawakami, Shin-ichiro Yanagiya, 新部正人 and 中野由祟 : 金ナノ粒子の局在表面プラズモン共鳴により増強されたTiO2/Au/TiO2/Auナノ構造体の光触媒反応性, 2023年第84回応用物理学会秋季学術講演会, 05-097, Sep. 2023.
4.	松本拓海, Retsuo Kawakami, Shin-ichiro Yanagiya, 新部正人 and 中野由祟 : 高圧アニーリングにより炭素不純物ドーピングしたアナターゼ/ルチル混晶型TiO2ナノ粒子の光触媒活性, 2023年第84回応用物理学会秋季学術講演会, 05-096, Sep. 2023.
5.	市村篤識, Retsuo Kawakami, Shin-ichiro Yanagiya, 新部正人 and 中野由祟 : 高圧アニーリング法により成長させたg-C3N4ナノシートの光触媒反応性, 2023年第84回応用物理学会秋季学術講演会, 08-002, Sep. 2023.
6.	Mutsumi Aihara, Takuto Izumi, Akihiro Shirai, Takashi Mukai and Retsuo Kawakami : Hygiene technology for plant nutrient solution using nonequilibrium atmospheric pressure plasma jets., 第96回日本細菌学会総会, Mar. 2023. (Keyword) プラズマジェット / 植物栽培養液 / 衛生管理技術 / ダメージレス
7.	牧野祐大, Retsuo Kawakami, Shin-ichiro Yanagiya, 新部正人, 中野由祟 and 向井孝志 : 白金ドープしたルチル型酸化チタンナノ粒子への大気圧低温酸素プラズマ支援アニーリング効果, 2022年第83回応用物理学会秋季学術講演会, 07-101, Sep. 2022.
8.	松村拓海, SOGAWA Ryutaroh, HASHIMURA Nene, 大橋孝一, Rie Mukai and Retsuo Kawakami : 準大気圧低温空気プラズマジェット照射による食品機能性成分増量効果, 2022年第83回応用物理学会秋季学術講演会, 07-042, Sep. 2022.
9.	野本和希, 泉匠人, Mutsumi Aihara, Kohsuke Takagi, SUZUKI Misato, 松村拓海, Akihiro Shirai, Takashi Mukai and Retsuo Kawakami : 植物養液への大気圧低温空気プラズマジェットによるダメージレス微生物不活化効果, 2022年第83回応用物理学会秋季学術講演会, 07-041, Sep. 2022.
10.	松本拓海, Retsuo Kawakami, Shin-ichiro Yanagiya, 新部正人, 中野由祟 and 向井孝志 : ポリエチレングリコールドーピングによるアナターゼ/ルチル混晶型酸化チタンナノ粒子の光触媒活性増強効果, 2022年第83回応用物理学会秋季学術講演会, 05-024, Sep. 2022.
11.	Akira Toyotome, Nakano Yoshitaka, Retsuo Kawakami and Niibe Masahito : Ar+イオン衝撃により p 型 GaN に導入される電気的ダメージの UV 光照射効果, 第69回応用物理学会春季学術講演会, Mar. 2022.
12.	Yuki Mimoto, Retsuo Kawakami, Akihiro Shirai, Shin-ichiro Yanagiya and Takashi Mukai : 大気圧低温プラズマ支援熱焼結したアナターゼ/ルチル混晶型TiO2ナノ粒子の殺菌効果, 日本防菌防黴学会第48回年次大会, 137, Sep. 2021.
13.	Yuki Takao, Retsuo Kawakami, Akihiro Shirai, Yuki Mimoto, Mutsumi Aihara and Takashi Mukai : アナターゼ型光触媒TiO2ナノ粒子による非接触殺菌効果, 日本防菌防黴学会第48回年次大会, 136, Sep. 2021.
14.	Retsuo Kawakami : 新規光触媒材料の開発と食品鮮度保持への応用と展望, 日本防菌防黴学会第48回年次大会, 80, Sep. 2021.
15.	Soma Fujiwara, Kohei Kasai, Yuki Mimoto, Satoshi Sugano, Yasuo Minami, Retsuo Kawakami and Shin-ichiro Yanagiya : 金/酸化チタンナノバレット構造の作製と光特性評価, 2021年度応用物理・物理系学会合同学術講演会, Gp-5, Jul. 2021.
16.	泉匠人, Retsuo Kawakami, Mutsumi Aihara, Takumi Matsumura, Akihiro Shirai, Katsuyuki Miyawaki and Takashi Mukai : 植物養液への大気圧低温空気プラズマジェット殺菌効果, 2021年度応用物理・物理系学会中国四国支部合同学術講演会, 40, Jul. 2021.
17.	Takuto Izumi, Retsuo Kawakami, Mutsumi Aihara, Akihiro Shirai, Katsuyuki Miyawaki and Takashi Mukai : 大気圧低温プラズマジェット照射による植物養液殺菌効果, 第68回春季応用物理学会学術講演会, 07-070, Mar. 2021.
18.	Yuki Mimoto, Retsuo Kawakami, Shin-ichiro Yanagiya, 新部正人, 中野由崇 and Takashi Mukai : 大気圧低温O2プラズマ支援熱処理したアナターゼ/ルチル混晶型TiO2ナノ粒子の紫外/可視光触媒活性, 第68回春季応用物理学会学術講演会, 07-069, Mar. 2021.
19.	Masanori Higuchi, Hirofumi Koide, Shin-ichiro Yanagiya, Retsuo Kawakami, Tetsuro Katayama, Akihiro Furube, 太田薫 and 富永圭介 : 金ナノ構造-酸化チタン積層膜のTHz-TDS評価, 第81回応用物理学会秋季学術講演会, 11a-Z24-7, Sep. 2020.
20.	Retsuo Kawakami, Yuki Mimoto, Hirofumi Koide, Shin-ichiro Yanagiya, 新部正人, 中野由崇 and Takashi Mukai : 熱アシスト非平衡大気圧O2プラズマ処理したアナターゼ型TiO2ナノ粒子の物性, 日本物理学会2020年秋季大会, Sep. 2020.
21.	泉匠人, Retsuo Kawakami, Mutsumi Aihara, Akihiro Shirai, Katsuyuki Miyawaki and Takashi Mukai : 植物養液への非平衡大気圧空気プラズマジェット照射効果, 2020年度応用物理・物理系学会中国四国支部合同学術講演会, 10, Aug. 2020.
22.	味元勇樹, Retsuo Kawakami, 新部正人, 中野由祟 and Takashi Mukai : アナターゼ/ルチル混晶型TiO2ナノ粒子への熱アシスト大気圧低温O2プラズマ処理効果, 2020年度応用物理・物理系学会中国四国支部合同学術講演会, 9, Aug. 2020.
23.	中野由崇, 豊留彬, 新部正人, Retsuo Kawakami and Retsuo Kawakami : CF4プラズマ処理したp型GaNの電気的ダメージ評価, 第67回春季応用物理学会学術講演会, No.1, Mar. 2020.
24.	芳谷勇樹, Akihiro Shirai, 梶川耕介, 安友優子, 小出洋史, 東知里, 向井孝志 and Retsuo Kawakami : 酸素プラズマ支援アニーリング処理した酸化チタンナノ粒子の殺菌効果, 日本防菌防黴学会第46回年次大会, 196, Sep. 2019.
25.	高見直樹, Retsuo Kawakami, Mutsumi Nakahashi, 新部正人, 中野由崇, 東知里 and 向井孝志 : 空気プラズマジェット照射による種子の発芽促進効果, 令和元年度電気関係学会四国支部連合大会講演論文集, 43, Sep. 2019.
26.	見谷皇章, Retsuo Kawakami, 芳谷勇樹, 新部正人, 東知里, 中野由崇 and 向井孝志 : ポリプロピレン表面への大気圧非熱平衡プラズマジェット照射効果, 令和元年度電気関係学会四国支部連合大会講演論文集, 41, Sep. 2019.
27.	小出洋史, Retsuo Kawakami, 芳谷勇樹, Shin-ichiro Yanagiya, Toshihiro Okamoto, Masanobu Haraguchi, Akihiro Furube, 新部正人, 中野由崇, 東知里 and 向井孝志 : Au/TiO2/Auナノ構造体の光触媒活性, 令和元年度電気関係学会四国支部連合大会講演論文集, 40, Sep. 2019.
28.	Retsuo Kawakami, 芳谷勇樹, 新部正人, 中野由崇, 東知里 and 向井孝志 : 低温大気圧空気プラズマジェット処理によるアルミニウムとニッケル表面の親水化, 令和元年度電気関係学会四国支部連合大会講演論文集, 39, Sep. 2019.
29.	芳谷勇樹, Retsuo Kawakami, 新部正人, 中野由崇, 東知里 and 向井孝志 : 大気圧O2プラズマ支援アニーリング処理したP-25 TiO2ナノ粒子の光触媒活性, 令和元年度電気関係学会四国支部連合大会講演論文集, 38, Sep. 2019.
30.	芳谷勇樹, Retsuo Kawakami, 小出洋史, 髙見直樹, 杉本典優, 見谷皇章, 新部正人, 中野由崇, 東知里 and 向井孝志 : アナターゼ型TiO2 ナノ粒子への加熱を伴うO2誘電体バリア放電プラズマ処理効果, 平成30年度電気関係学会四国支部連合大会講演論文集, 25, Sep. 2018.
31.	Retsuo Kawakami, 芳谷勇樹, 新部正人, 中野由崇, 東知里 and 向井孝志 : AlGaN薄膜表面へのCF4プラズマ処理中に及ぼす紫外光同時照射効果, 平成30年度電気関係学会四国支部連合大会講演論文集, 26, Sep. 2018.
32.	Toshihiko Takahata, Yuuki Yoshitani, Shin-ichiro Yanagiya, Retsuo Kawakami and Akihiro Furube : 酸化チタンと金による高吸収MIM膜の作製と光学特性評価, 第79回応用物理学会秋季学術講演会, 19p-PA7-22, Sep. 2018.
33.	Retsuo Kawakami, 新部正人, 中野由崇, 芳谷勇樹, 東知里 and 向井孝志 : 光触媒TiO2薄膜への加熱を伴うO2 DBDプラズマ処理効果, 平成29年度電気関係学会四国支部連合大会講演論文集, 42, Sep. 2017.
34.	荒木佑馬, 新部正人, Retsuo Kawakami, 竹平徳崇 and 中野由崇 : TiO2薄膜のプラズマ処理試料のXPS法による組成と触媒活性の相関III, 第30回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2017.
35.	田中良, 新部正人, Retsuo Kawakami, 中野由崇 and 向井孝志 : 酸素および窒素プラズマ処理したAlGaN膜の表面分析, 第30回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2017.
36.	中野由崇, 新部正人 and Retsuo Kawakami : CF4プラズマ処理したn-GaN膜の電気的ダメージ, 2016 真空・表面科学合同講演会，第36回表面科学学術講演会・第57回真空に関する連合講演会, No.1, Nov. 2016.
37.	Retsuo Kawakami, 新部正人, 中野由崇, 東知里 and 向井孝志 : 紫外線照射下でのCF4 プラズマエッチングによるAlGaN表面ダメージ, 平成28年度電気関係学会四国支部連合大会講演論文集, 44, Sep. 2016.
38.	新部正人, Retsuo Kawakami, 中野由崇, 田中良, 荒木佑馬, 東知里 and 向井孝志 : AlGaN 表面特性への酸素プラズマ照射効果, 第77回秋季応用物理学会学術講演会, Sep. 2016.
39.	中野由崇, 坂井佑輔, 新部正人 and Retsuo Kawakami : CF4プラズマ処理したn-GaN 膜の電気的評価, 第63回春季応用物理学会学術講演会, No.1, Mar. 2016.
40.	荒木佑馬, 新部正人, Retsuo Kawakami, 竹平徳崇 and 中野由崇 : TiO2薄膜のプラズマ処理試料のXPS法による組成と触媒活性の相関II, 第29回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2016.
41.	平井翔大, 新部正人, Retsuo Kawakami, 竹平徳崇, 中野由崇 and 向井孝志 : CF4とArプラズマで処理したAlGaN膜の表面分析, 第29回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2016.
42.	Retsuo Kawakami, 新部正人, 中野由崇, 東知里 and 向井孝志 : CF4とArプラズマで処理したAlGaN/GaNの電気特性, 平成27年度電気関係学会四国支部連合大会講演論文集, 43, Sep. 2015.
43.	新部正人, 荒木佑馬, 竹平徳崇, Retsuo Kawakami, 中野由崇 and 東知里 : 酸化チタン薄膜表面への酸素プラズマ照射効果, 第76回秋季応用物理学会学術講演会, Sep. 2015.
44.	新部正人, Retsuo Kawakami, 中野由崇, 竹平徳崇, 平井翔大, 荒木佑馬, 東知里 and 向井孝志 : 紫外光アシストCF4プラズマでエッチンングされたAlGaN表面分析, 第76回秋季応用物理学会学術講演会, Sep. 2015.
45.	Retsuo Kawakami, 新部正人, 中野由崇, 東知里 and 向井孝志 : 対向ターゲット式スパッタ法により作製した酸化チタン薄膜の光触媒特性, 2015年度応用物理・物理系学会中国四国支部合同学術講演会, 116, Aug. 2015.
46.	荒木佑馬, 竹平徳崇, 新部正人 and Retsuo Kawakami : 酸化チタン薄膜表面への酸素プラズマ処理による効果, 応用物理学会関西支部平成27年度第1回講演会, Jun. 2015.
47.	中野由崇, Retsuo Kawakami, 新部正人, 髙木健司, 白濱達夫 and 向井孝志 : CF4プラズマ処理したAlGaN/GaNヘテロ構造の電気的評価, 第62回春季応用物理学会学術講演会, No.1, Mar. 2015.
48.	中野由崇, 髙木健司, 小川大輔, 中村圭二, 新部正人 and Retsuo Kawakami : Ar+イオン照射したMOCVD-GaN:Si膜の電気的評価, 第62回春季応用物理学会学術講演会, No.1, Mar. 2015.
49.	佐野桂治, 新部正人, Retsuo Kawakami and 中野由崇 : 軟X線照射によるTiO2超微粒子のNEXAFSスペクトル形状の回復, 第62回春季応用物理学会学術講演会, No.1, Mar. 2015.
50.	平井翔大, 新部正人, Retsuo Kawakami, 白濱達夫, 中野由崇 and 向井孝志 : ArとCF4プラズマで処理したAlGaN膜の表面分析, 第28回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2015.
51.	佐野桂治, 新部正人, Retsuo Kawakami and 中野由崇 : X線吸収分光法を用いたTiO2薄膜のプラズマダメージ評価, 第28回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2015.
52.	中野由崇, 中村圭二, 新部正人 and Retsuo Kawakami : A+イオン照射したHVPE-GaN膜の電気的評価, 第75回秋季応用物理学会学術講演会, Sep. 2014.
53.	新部正人, Retsuo Kawakami, 中野由崇, 向井孝志, 白濱達夫 and 平井翔大 : CF4とArプラズマでエッチングしたAlGaN表面ダメージ, 第75回秋季応用物理学会学術講演会, Sep. 2014.
54.	白濱達夫, Retsuo Kawakami, 新部正人, 中野由崇, 平井翔大 and 向井孝志 : CF4プラズマとAlGaN表面との相互作用, 平成26年度電気関係学会四国支部連合大会講演論文集, 41, Sep. 2014.
55.	Retsuo Kawakami, 新部正人, 中野由崇, 白濱達夫 and 向井孝志 : 対向ターゲットを用いたDCプラズマスパッタリングによる酸化チタン薄膜の生成, 平成26年度電気関係学会四国支部連合大会講演論文集, 40, Sep. 2014.
56.	新部正人, 平井翔大, Retsuo Kawakami, 白濱達夫, 中野由崇 and 向井孝志 : UVアシストHeプラズマによりエッチングしたn-GaN結晶の表面ダメージの分析, 第61回春季応用物理学会学術講演会, No.1, Mar. 2014.
57.	佐野桂治, 新部正人, Retsuo Kawakami and 中野由崇 : X線吸収分光法によるTiO2薄膜のエッチングダメージ評価, 第61回春季応用物理学会学術講演会, No.1, Mar. 2014.
58.	佐野桂治, 新部正人, Retsuo Kawakami and 中野由崇 : エッチングダメージの回復したTiO 2 薄膜のNEXAFS 評価, 第27回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2014.
59.	新部正人, 小高拓也, 平井翔大, Retsuo Kawakami, 中野由崇 and 向井孝志 : N-K吸収分光法を用いたn-GaN結晶のプラズマエッチングダメージの解析, 第27回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2014.
60.	Retsuo Kawakami, 新部正人, 中野由崇, 松永史彦, 山田哲也, 仲祐弥, 白濱達夫, 青木一馬, 高畑麻里 and 大場健太 : 窒素とヘリウムDBDプラズマ処理された酸化チタン薄膜の表面状態, 日本物理学会 2013年秋季大会, 第68巻, 第2号, 第4分冊, 820, Sep. 2013.
61.	高畑麻里, Retsuo Kawakami, 板東由季, 白濱達夫, 大塩誠二, 山路諭, 播岡好之, 吉田雅彦, 荒巻広至 and 前田鎮廣 : LED光触媒システムによる果実の鮮度保持技術, 平成25年度電気関係学会四国支部連合大会講演論文集, 78, Sep. 2013.
62.	山田哲也, Retsuo Kawakami, 新部正人, 中野由崇 and 佐野桂治 : 二酸化チタン配合フッ素樹脂へのDBDエアプラズマトリートメント, 平成25年度電気関係学会四国支部連合大会講演論文集, 40, Sep. 2013.
63.	Retsuo Kawakami, 新部正人, 中野由崇, 向井孝志, 白濱達夫, 山田哲也, 青木一馬, 仲祐弥, 高畑麻里 and 大場健太 : N2プラズマによるGaNエッチングダメージ, 平成25年度電気関係学会四国支部連合大会講演論文集, 39, Sep. 2013.
64.	白濱達夫, Retsuo Kawakami, 新部正人, 竹内日出雄 and 佐野桂治 : HeプラズマによるSiCエッチングダメージ, 平成25年度電気関係学会四国支部連合大会講演論文集, 38, Sep. 2013.
65.	佐野桂治, 新部正人, Retsuo Kawakami, Kikuo Tominaga and 中野由崇 : XASスペクトルに見られるTiO2薄膜のエッチングダメージ回復現象の条件評価, 第74回秋季応用物理学会学術講演会, No.1, 06-113, Sep. 2013.
66.	新部正人, 佐野桂治, Retsuo Kawakami, Kikuo Tominaga and 中野由崇 : SXおよびUV照射によるTiO2薄膜のエッチングダメージの回復, 第74回秋季応用物理学会学術講演会, No.1, 07-059, Sep. 2013.
67.	Retsuo Kawakami, 新部正人, 中野由崇, 向井孝志, 白濱達夫, 山田哲也, 青木一馬, 仲祐弥, 高畑麻里 and 大場健太 : 紫外光アシストHeプラズマによるn-GaN表面エッチングダメージ, 第74回秋季応用物理学会学術講演会, 08-034, Sep. 2013.
68.	新部正人, 佐野桂治, 小高拓也, Retsuo Kawakami, 富永喜久雄 and 中野由崇 : 軟X線照射によるTiO2薄膜のエッチングダメージの回復II, 第60回春季応用物理学会学術講演会, No.1, Mar. 2013.
69.	佐野桂治, 新部正人, 小高拓也, Retsuo Kawakami, 富永喜久雄 and 中野由崇 : 軟X線照射によるTiO2薄膜のエッチングダメージの回復Ⅰ, 第60回春季応用物理学会学術講演会, No.1, Mar. 2013.
70.	新部正人, Retsuo Kawakami, 中野由崇, 小西将士, 森祐太, 小高拓也, 白濱達夫, 山田哲也, 富永喜久雄 and 向井孝志 : n-GaN表面のN2プラズマエッチングダメージ, 第60回春季応用物理学会学術講演会, No.1, Mar. 2013.
71.	新部正人, 佐野桂治, 小高拓也, Retsuo Kawakami, Kikuo Tominaga and 中野由崇 : 軟X線照射によるTiO2薄膜の乱れた構造の回復, 第26回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2013.
72.	新部正人, 小高拓也, Retsuo Kawakami and 竹内日出雄 : プラズマエッチングしたp-SiC結晶のダメージ解析, 第26回日本放射光学会年会放射光科学合同シンポジウム, Jan. 2013.
73.	森祐太, Retsuo Kawakami, 新部正人, 中野由崇, 小西将士, 小高拓也, 白濱達夫, 山田哲也 and Kikuo Tominaga : 二酸化チタン配合フッ素樹脂へのDBDエアプラズマトリートメント, 平成24年度電気関係学会四国支部連合大会講演論文集, 52, Sep. 2012.
74.	Retsuo Kawakami, 新部正人, 竹内日出雄, 森祐太, 小西将士, 小高拓也, 白濱達夫, 山田哲也 and Kikuo Tominaga : ArプラズマによるSiCエッチングダメージ, 平成24年度電気関係学会四国支部連合大会講演論文集, 50, Sep. 2012.
75.	小西将士, Retsuo Kawakami, 新部正人, 中野由崇, 森祐太, 小高拓也, 白濱達夫, 山田哲也, Kikuo Tominaga and 向井孝志 : p-GaNとn-GaNにおけるAr プラズマエッチングダメージ, 平成24年度電気関係学会四国支部連合大会講演論文集, 49, Sep. 2012.
76.	Retsuo Kawakami, 新部正人, 中野由崇, 小西将士, 森祐太, 小高拓也, 白濱達夫, 山田哲也, Kikuo Tominaga and 向井孝志 : 容量性結合アルゴンプラズマによるp-GaNエッチングダメージ, 第73回秋季応用物理学会学術講演会, No.1, 08-085, Sep. 2012.
77.	新部正人, 小高拓也, Retsuo Kawakami, Kikuo Tominaga and 中野由崇 : 軟X線吸収分光法によるTiO2薄膜のエッチングダメージの解析, 第73回秋季応用物理学会学術講演会, No.1, 08-088, Sep. 2012.
78.	中野由崇, 中村圭二, 新部正人, Retsuo Kawakami, 伊藤慎祥, 小高拓也, Takeshi Inaoka and Kikuo Tominaga : GaNのArプラズマエッチングへのUV 光照射効果, 第59回春季応用物理学会学術講演会, No.1, Mar. 2012.
79.	小西将士, Retsuo Kawakami, 新部正人, 武市敦, 森祐太, 小高拓也, 中野由崇, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : 窒素プロセシングプラズマによるn-GaNエッチングダメージ, 平成23年度電気関係学会四国支部連合大会講演論文集, 41, Sep. 2011.
80.	森祐太, Retsuo Kawakami, 新部正人, 武市敦, 小西将士, 小高拓也, 松永史彦, 高崎敏英, 北野尊宣, 宮崎隆弘, Takeshi Inaoka and Kikuo Tominaga : DBD He/Air プラズマトリートメントによるTiO2薄膜表面の分析, 平成23年度電気関係学会四国支部連合大会講演論文集, 40, Sep. 2011.
81.	武市敦, Retsuo Kawakami, 新部正人, 中野由崇, 小西将士, 森祐太, 小高拓也, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : Ar/Krプラズマイオンと紫外線のシナジー効果によるn-GaNエッチングダメージ, 平成23年度電気関係学会四国支部連合大会講演論文集, 39, Sep. 2011.
82.	Retsuo Kawakami, 武市敦, 新部正人, 森祐太, 小西将士, 小高拓也, Takeshi Inaoka and Kikuo Tominaga : TiO2薄膜のHeプラズマエッチングダメージ, 平成23年度電気関係学会四国支部連合大会講演論文集, 38, Sep. 2011.
83.	中野由崇, Retsuo Kawakami, 新部正人, 武市敦, Takeshi Inaoka and Kikuo Tominaga : プラズマエッチング損傷GaNのフォトルミネッセンス評価, 第72回秋季応用物理学会学術講演会, No.1, 08-111, Aug. 2011.
84.	新部正人, 小高拓也, Retsuo Kawakami, 中野由崇, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : HeおよびArガスを用いてプラズマエッチングしたn-GaN結晶の表面ダメージ分析, 第72回秋季応用物理学会学術講演会, No.1, 08-110, Aug. 2011.
85.	Retsuo Kawakami, 新部正人, 中野由崇, 武市敦, 小西将士, 森祐太, 小高拓也, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : 容量性結合N2プラズマによるGaNエッチングダメージ, 第72回秋季応用物理学会学術講演会, No.1, 08-109, Aug. 2011.
86.	中野由崇, Retsuo Kawakami, 新部正人, 武市敦, Takeshi Inaoka and Kikuo Tominaga : GaN のプラズマエッチング損傷のフォトルミネッセンス評価, 第58回春季応用物理学会学術講演会, No.1, Mar. 2011.
87.	新部正人, 小高拓也, Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : プラズマエッチングしたGaN結晶のN-K吸収測定によるダメージ解析II, 第24回日本放射光学会年会, Jan. 2011.
88.	武市敦, Retsuo Kawakami, 新部正人, Takeshi Inaoka, 向井考志, 小西将士, 森祐太, 兒玉宗久 and Kikuo Tominaga : ヘリウムとアルゴンプラズマによる窒化ガリウムエッチングダメージ, 平成22年度電気関係学会四国支部連合大会講演論文集, 21, Sep. 2010.
89.	Retsuo Kawakami, 新部正人, 武市敦, Takeshi Inaoka, 小西将士, 森祐太, 兒玉宗久 and Kikuo Tominaga : TiO2光触媒へのDBDエアプラズマトリートメント効果, 平成22年度電気関係学会四国支部連合大会講演論文集, 20, Sep. 2010.
90.	新部正人, 前田佳恵, Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : Ar, KrおよびXeガスを用いてRFプラズマエッチングしたn-GaN 結晶の表面分析, 第71回秋季応用物理学会学術講演会論文集, No.1, 08-133, Sep. 2010.
91.	Retsuo Kawakami, 新部正人, 武市敦, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : GaNの容量結合型RFヘリウムプラズマエッチダメージ, 第71回秋季応用物理学会学術講演会論文集, No.1, 08-132, Sep. 2010.
92.	新部正人, 前田佳恵, Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : プラズマエッチングしたGaN結晶のN-K吸収測定によるダメージ解析, 第23回日本放射光学会年会, Jan. 2010.
93.	Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga, 新部正人 and 向井孝志 : クリプトンとアルゴンプラズマによる窒化ガリウムエッチングダメージ, 平成21年度電気関係学会四国支部連合大会講演論文集, 29, Sep. 2009.
94.	Takeshi Inaoka, Retsuo Kawakami, Kikuo Tominaga, 新部正人 and 向井孝志 : 非対称放電系容量結合型RFクリプトンプラズマの放電及び発光特性, 平成21年度電気関係学会四国支部連合大会講演論文集, 30, Sep. 2009.
95.	Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga, 新部正人 and 向井孝志 : 容量結合型KrプラズマによるGaNエッチングダメージ解析, 第70回秋季応用物理学会学術講演会論文集, No.1, 188, Sep. 2009.
96.	新部正人, 前田佳恵, Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : ArおよびKrでRFプラズマエッチングしたGaN結晶の表面組成分析, 第70回秋季応用物理学会学術講演会論文集, No.1, 189, Sep. 2009.
97.	森一郎, 森本敏文 and Retsuo Kawakami : 揺らぎを介する二個のビーム電子とイオンの相互作用と集団`CLUMP'の形成, 平成20年度電気関係学会四国支部連合大会講演論文集, 12, Sep. 2008.
98.	Retsuo Kawakami, 稲岡武, Kikuo Tominaga, 平岡謙作, 工藤裕貴, 小出訓之 and 向井孝志 : n-GaNのアルゴンプラズマエッチングダメージ, 平成20年度電気関係学会四国支部連合大会講演論文集, 13, Sep. 2008.
99.	Retsuo Kawakami, 稲岡武, Kikuo Tominaga and 向井孝志 : GaNエッチングダメージへのアルゴンプラズマ粒子と紫外放射光のシナジー効果, 第69回秋季応用物理学会学術講演会論文集, No.1, 175, Sep. 2008.
100.	Retsuo Kawakami and 稲岡武 : 容量結合型高周波プラズマナノプロセスリアクタの開発と放電及び分光特性, 平成19年度電気関係学会四国支部連合大会講演論文集, 18, Sep. 2007.
101.	Retsuo Kawakami and 稲岡武 : 容量結合型アルゴンプラズマエッチングダメージによるn-GaNの電子的特性, 第68回秋季応用物理学会学術講演会論文集, No.1, 178, Sep. 2007.
102.	Retsuo Kawakami and 稲岡武 : 非平衡RFプラズマの自己組織化構造とドライエッチングとの相関性, 平成18年度電気関係学会四国支部連合大会講演論文集, 16, Sep. 2006.
103.	Retsuo Kawakami and 稲岡武 : 容量性結合ArプラズマによるGaNエッチングダメージの解析, 第67回秋季応用物理学会学術講演会論文集, No.1, 162, Aug. 2006.
104.	Retsuo Kawakami and 稲岡武 : 容量結合型高周波プラズマによるGaNエッチングの解析, 日本物理学会中国四国支部応用物理学会中国四国支部平成18年度支部例会講演論文集, 23, Jul. 2006.
105.	稲岡武 and Retsuo Kawakami : 低温プラズマエッチングされたn-GaNのショットキー接合リーク電流特性, 日本物理学会中国四国支部応用物理学会中国四国支部平成18年度支部例会講演論文集, 24, Jul. 2006.
106.	Retsuo Kawakami : 非平衡プラズマの自己組織化とドライエッチングとの関連性, 平成17年度電気関係学会四国支部連合大会講演論文集, 36, Sep. 2005.
107.	Retsuo Kawakami : 炭素不純物を含む水素イオンで照射されたタングステン材表面の付着炭素不純物の振舞い, 第66回秋季応用物理学会学術講演会論文集, No.2, 630, Sep. 2005.
108.	Yoshihiro Yamagami, Retsuo Kawakami, Kikuo Tominaga, 岩崎聡一郎 and 松田潤也 : 電気回路の過渡現象に関する創成型学生実験への取り組みとその教育効果, 平成17年電気学会全国大会講演論文集, 1, Mar. 2005.
109.	Retsuo Kawakami : プラズマ対向壁としての低放射化フェライト鋼F82Hの損耗特性, 平成17年電気学会全国大会講演論文集, 222, Mar. 2005.
110.	上田良夫, 崎園大, 沢村功, 島田朋尚, Retsuo Kawakami and 西川雅弘 : タングステン第一壁上の炭素混合層の形成メカニズム, プラズマ核融合学会第20回年会講演論文集, Nov. 2004.
111.	Retsuo Kawakami : SOLプラズマ中の炭素不純物輸送への高次炭化水素CxDyの寄与, 平成16年度電気関係学会四国支部連合大会講演論文集, 39, Sep. 2004.
112.	Retsuo Kawakami, 島田朋尚, 上田良夫 and 西川雅弘 : 水素・炭素混合イオンビーム照射によるタングステン材表面上の混合層の成長, プラズマ核融合学会第20回年会, 96, Nov. 2003.
113.	三谷武範, 栗生修平 and Retsuo Kawakami : 炭素不純物を含む重水素プラズマ照射によるタングステン材の損耗・再付着, 平成15年度電気関係学会四国支部連合大会, 59, Oct. 2003.
114.	栗生修平, Retsuo Kawakami and 三谷武範 : ダイバータプラズマ照射による炭素材の損耗・再付着, 平成15年度電気関係学会四国支部連合大会, 58, Oct. 2003.
115.	Retsuo Kawakami, 栗生修平 and 三谷武範 : 化学スパッタリングにより周辺プラズマへ放出された炭素不純物の振舞い, 平成15年度電気関係学会四国支部連合大会, 57, Oct. 2003.
116.	長尾優男, 森一郎 and Retsuo Kawakami : ビーム・プラズマ系に現われる固有な波形と非線形Landau-減衰, 平成15年度電気関係学会四国支部連合大会, 45, Oct. 2003.
117.	島田朋尚, 船曳一央, 増井亮太, 上田良夫, 西川雅弘, Retsuo Kawakami and 大宅薫 : 水素・炭素混合ビーム照射後のタングステン試料表面分析, 日本原子力学会 2003年春の年会, Mar. 2003.
118.	Retsuo Kawakami and 大宅薫 : SOLプラズマ照射によるタングステン材表面上の混合層の成長, プラズマ核融合学会第19回年会, 156, Nov. 2002.
119.	山下優年, Retsuo Kawakami and 大宅薫 : リミタープラズマ照射下の炭素素材表面の損耗過程と炭素不純物の輸送過程, 平成14年度電気関係学会四国支部連合大会, 28, Oct. 2002.
120.	中山芳彦, Retsuo Kawakami and 大宅薫 : リミタープラズマ照射下の炭素不純物堆積とスパッタリング損耗による対向壁材の表面挙動, 平成14年度電気関係学会四国支部連合大会, 27, Oct. 2002.
121.	Retsuo Kawakami and 大宅薫 : 炭素不純物を含む重水素プラズマ照射により材壁から放出される炭素不純物の振舞い, 平成14年度電気関係学会四国支部連合大会, 26, Oct. 2002.
122.	Retsuo Kawakami and 大宅薫 : 計算機シミュレーションによるITERダイバータ板の損耗と再堆積, プラズマ核融合学会第18回年会, 131, Nov. 2001.
123.	Retsuo Kawakami and 大宅薫 : 炭素不純物を含む重水素プラズマ照射によるボロン表面の損耗と再付着過程, 平成13年度電気関係学会四国支部連合大会, 37, Sep. 2001.
124.	永田真一, Retsuo Kawakami and 大宅薫 : プラズマ照射によるW-Cツインテストリミター表面の損耗と堆積, 平成13年度電気関係学会四国支部連合大会, 36, Sep. 2001.
125.	井高賢士, Retsuo Kawakami and 大宅薫 : 計算機シミュレーションによるITERダイバータ板の損耗評価, 平成13年度電気関係学会四国支部連合大会, 35, Sep. 2001.
126.	大宅薫, Retsuo Kawakami, 田辺哲朗, 和田元, 大後忠志, V. Philipps, M. Rubel and 野田信明 : プラズマ照射による炭素材料とタングステンの損耗・再付着のモデル計算, プラズマ核融合学会第17回年会, Nov. 2000.
127.	井高賢士, Retsuo Kawakami and 大宅薫 : ITERダイバータの損耗と再堆積の計算機シミュレーション, 平成12年度電気関係学会四国支部連合大会, 37, Oct. 2000.
128.	新居誠, Retsuo Kawakami and 大宅薫 : TEXTORテストリミターにおける不純物放出及び再堆積過程, 平成12年度電気関係学会四国支部連合大会, 36, Oct. 2000.
129.	永田真一, Retsuo Kawakami and 大宅薫 : イオン衝撃による混成材料のダイナミックシミュレーション, 平成12年度電気関係学会四国支部連合大会, 35, Oct. 2000.
130.	Retsuo Kawakami and 大宅薫 : TEXTORにおけるW/Cテストリミターの損耗と再堆積過程, 平成12年度電気関係学会四国支部連合大会, 34, Oct. 2000.
131.	新居誠, 井高賢士, 永田真一, Retsuo Kawakami and 大宅薫 : 固体表面からのイオン反射とスパッタリングに対する不純物堆積の効果, 第3回核融合エネルギー連合講演会, 88, Jun. 2000.
132.	Retsuo Kawakami, 大宅薫, 田辺哲朗, 和田元, 大後忠志, V. Philipps and The TEXTOR team : TEXTOR周辺プラズマ照射によるW/Cツインリミターの相互汚染シミュレション, 第3回核融合エネルギー連合講演会, 87, Jun. 2000.
133.	Retsuo Kawakami, 大宅薫, 河田純, 田辺哲朗, 和田元, 大後忠志, V. Philipps and The TEXTOR team : TEXTOR周辺プラズマ照射によるW/Cツインリミターからの不純物放出シミュレーション, プラズマ・核融合学会第16回年会, 163, Nov. 1999.
134.	佐治申康, 相澤洋, Retsuo Kawakami and 大宅薫 : タングステンとボロン表面損耗と不純物炭素堆積シミュレーション, プラズマ・核融合学会第16回年会, 156, Nov. 1999.
135.	河田純, 大宅薫 and Retsuo Kawakami : イオン衝撃による物理スパッタリングと電子放出, 平成11年度電気関係学会四国支部連合大会, 54, Oct. 1999.
136.	佐治申康, Retsuo Kawakami and 大宅薫 : TEXTORにおけるタングステンテストリミターの損耗と不純物炭素の再堆積, 平成11年度電気関係学会四国支部連合大会, 39, Oct. 1999.
137.	Retsuo Kawakami, 大宅薫 and 河田純 : TEXTOR-W/Cツインテストリミターからのタングステン及びカーボン放出粒子の挙動解析, 平成11年度電気関係学会四国支部連合大会, 38, Oct. 1999.
138.	新居誠, 佐治申康, Retsuo Kawakami and 大宅薫 : 不純物堆積によるスパッタリングとイオン反射のシミュレーション, 平成11年度電気関係学会四国支部連合大会, 37, Oct. 1999.
139.	相澤洋, Retsuo Kawakami, 佐治申康 and 大宅薫 : 不純物堆積した凹凸表面トポグラフィーのシミュレーション, 平成11年度電気関係学会四国支部連合大会, 36, Oct. 1999.
140.	森一郎, 森本敏文, Retsuo Kawakami and 富永喜久雄 : ビーム・プラズマ中での包絡ソリトンの発生環境, 平成10年度電気関係学会四国支部連合大会, 35, Oct. 1998.
141.	Retsuo Kawakami, 森一郎 and 森本敏文 : 電子ビーム・プラズマ中の高域混成孤立波の動重力, 平成10年度電気関係学会四国支部連合大会, 34, Oct. 1998.
142.	原和正, 森一郎, Retsuo Kawakami and 富永喜久雄 : 電子ビーム・プラズマ系におけるプラズマの電子的阻止能, 平成10年度電気関係学会四国支部連合大会, 33, Oct. 1998.
143.	小川誠, 森一郎, Retsuo Kawakami and 富永喜久雄 : ビーム・プラズマにおける非線形分散式の研究, 平成10年度電気関係学会四国支部連合大会, 32, Oct. 1998.
144.	森一郎, 森本敏文, Retsuo Kawakami and 富永喜久雄 : ビーム・プラズマ中での後進波の群速度の場所依存性と高周波放電への関連性, 日本物理学会中国四国支部,応用物理学会中国四国支部,平成10年度支部例会, Fa-4, Aug. 1998.
145.	原和正, 森一郎, Retsuo Kawakami and 富永喜久雄 : 電子ビーム・プラズマ系での電子ビームの速度緩和現象とStopping Power, 日本物理学会中国四国支部,応用物理学会中国四国支部,平成10年度支部例会, Fa-3, Aug. 1998.
146.	小川誠, 森一郎, Retsuo Kawakami and 富永喜久雄 : プラズマ波動の非線形分散式の研究, 日本物理学会中国四国支部,応用物理学会中国四国支部,平成10年度支部例会, Fa-2, Aug. 1998.
147.	Retsuo Kawakami, 森一郎 and 森本敏文 : 電子ビーム・プラズマ相互作用で励起される高域混成波, 日本物理学会中国四国支部,応用物理学会中国四国支部,平成10年度支部例会, Fa-1, Aug. 1998.
148.	森一郎, 森本敏文, Retsuo Kawakami and 富永喜久雄 : プラズマ中の電子ビームのソリトン放出とビームの広がり, 第53回日本物理学会, 799, Mar. 1998.
149.	Retsuo Kawakami, 森一郎 and 森本敏文 : 電子ビーム・プラズマ系の高域混成波ソリトンの非線形ランダウ減衰, 第53回日本物理学会, 798, Mar. 1998.
150.	森一郎, 森本敏文, Retsuo Kawakami and 富永喜久雄 : 三次の分極効果による輻射へのイオンの寄与と阻止能計算への期待, 平成9年度電気関係学会四国支部連合大会, 52, Oct. 1997.
151.	小川誠, 森一郎, Retsuo Kawakami and 富永喜久雄 : ビーム・プラズマ相互作用への繰り込み法の適用, 平成9年度電気関係学会四国支部連合大会, 51, Oct. 1997.
152.	原和正, 森一郎, Retsuo Kawakami and 富永喜久雄 : 電子ビーム・プラズマ系での電子ビームの速度緩和現象, 平成9年度電気関係学会四国支部連合大会, 50, Oct. 1997.
153.	Retsuo Kawakami, 森本敏文 and 森一郎 : 高域混成波ソリトンの不安定性, 平成9年度電気関係学会四国支部連合大会, 49, Oct. 1997.
154.	森一郎, 森本敏文, Retsuo Kawakami and 富永喜久雄 : 電子波ソリトンとイオン波ソリトンの相互作用, 第52回日本物理学会, 841, Mar. 1997.
155.	Retsuo Kawakami, 森一郎, 森本敏文 and 長谷部慎 : ビーム・プラズマ系の高域混成波ソリトンの安定性, 第52回日本物理学会, 834, Mar. 1997.
156.	Retsuo Kawakami, 長谷部慎, 森本敏文 and 森一郎 : 高域混成波ソリトンの非線形ランダウ減衰, 平成8年度電気関係学会四国支部連合大会, 31, Oct. 1996.
157.	長谷部慎, 森一郎, Retsuo Kawakami, 森本敏文 and 富永喜久雄 : 高域混成波ソリトンの内部構造, 平成8年度電気関係学会四国支部連合大会, 30, Oct. 1996.
158.	Retsuo Kawakami and 生田信皓 : He中He^{+}イオンの換算移動度と相互作用ポテンシャル, 第51回日本物理学会, 132, Mar. 1996.
159.	Retsuo Kawakami, 宮崎隆史 and 生田信皓 : イオン輸送特性実効温度表示の問題点, 第51回日本物理学会, 131, Mar. 1996.
160.	宮崎隆史, Retsuo Kawakami and 生田信皓 : イオン輸送特性のイオン-ガス質量比による変化, 平成7年度電気関係学会四国支部連合大会, 35, Nov. 1995.
161.	Retsuo Kawakami, 宮崎隆史 and 生田信皓 : 12-4ポテンシャルにおけるイオン移動度特性, 平成7年度電気関係学会四国支部連合大会, 36, Nov. 1995.
162.	Retsuo Kawakami, 奥田慎也 and 生田信皓 : イオン移動度特性と相互作用ポテンシャル, 平成7年電気学会全国大会, 1-229, Mar. 1995.
163.	Retsuo Kawakami, 奥田慎也 and 生田信皓 : Lennard-Jones Potentialによるイオン衝突周波数と輸送特性, 平成6年度電気関係学会四国支部連合大会, 34, Oct. 1994.
164.	Retsuo Kawakami and 生田信皓 : 相互作用ポテンシャルと衝突断面積, 平成6年電気学会全国大会, 2-81, Mar. 1994.

Et cetera, Workshop:

1.	Retsuo Kawakami, ICHIMURA Atsunori, Akihiro Shirai, Katsuyuki Miyawaki, 立木弥生, 吉田雅彦 and 福光秀之 : 405-nm LED照射とg-C3N4ナノシートによる果実鮮度保持効果, 次世代光フォーラム2023 in 徳島, 103-104, Jan. 2024.
2.	Kohsuke Takagi, SUZUKI Misato, TAKUMI Matsumoto, Mutsumi Aihara and Retsuo Kawakami : 高圧アニーリングにより形成させたグラファイト状窒化炭素のLED光分解効果, 次世代光フォーラム2023 in 徳島, 113-114, Feb. 2023.
3.	Retsuo Kawakami, Kohsuke Takagi, Akihiro Shirai, Katsuyuki Miyawaki, 立木弥生, 吉田雅彦 and 福光秀之 : 可視光LED照射したグラファイト状窒化炭素の鮮度保持効果, 次世代光フォーラム2023 in 徳島, 111-112, Feb. 2023.
4.	植田迅, 榎本康, 岡田宏 and Retsuo Kawakami : UV-LED照射下での光触媒酸化チタンナノ粒子の脱臭効果, LED総合フォーラム2022 in 徳島, 139-140, Jan. 2022.
5.	高尾祐希, Akihiro Shirai, Yuki Mimoto, Mutsumi Aihara and Retsuo Kawakami : LED照射下でのアナターゼTiO2ナノ粒子の非接触殺菌効果, LED総合フォーラム2022 in 徳島, 137-138, Jan. 2022.
6.	味元勇樹, Akihiro Shirai, Shin-ichiro Yanagiya and Retsuo Kawakami : プラズマ支援アニーリングしたアナターゼ/ルチル混晶型酸化チタンナノ粒子の光分解と光殺菌効果, LED総合フォーラム2022 in 徳島, 135-136, Jan. 2022.
7.	Retsuo Kawakami, Jin Ueda, 味元勇樹, Akihiro Shirai, Katsuyuki Miyawaki and 吉田雅彦 : プラズマ支援熱焼結処理したアナターゼTiO2ナノ粒子の光殺菌と鮮度保持効果, LED総合フォーラム2022 in 徳島, 133-134, Jan. 2022.
8.	Retsuo Kawakami, 味元勇樹, Katsuyuki Miyawaki, Akihiro Shirai and 吉田雅彦 : 熱支援プラズマ処理したアナターゼ/ルチル混晶型光触媒TiO2ナノ粒子の光分解と鮮度保持効果, LED総合フォーラム2021 in 徳島, 145-146, Feb. 2021.
9.	芳谷勇樹, Retsuo Kawakami, 梶川耕介, Akihiro Shirai and 東知里 : 紫外線LED照射によるTiO2ナノ粒子の光触媒効果, LED総合フォーラム2020 in 徳島, 85-86, Feb. 2020.
10.	Retsuo Kawakami, 髙見直樹, 芳谷勇樹, 味元勇樹, 東知里, Katsuyuki Miyawaki, Akihiro Shirai, 吉田雅彦 and 山路諭 : 可視光LED照射下でのプラズマ支援アニーリングした光触媒TiO2ナノ粒子の鮮度保持効果, LED総合フォーラム2020 in 徳島, 83-84, Feb. 2020.
11.	Retsuo Kawakami, Katsuyuki Miyawaki, Akihiro Shirai, 吉田雅彦, 芳谷勇樹, 髙見直樹, 東知里 and 山路諭 : 可視光LEDによる光触媒ナノ複合材シートの鮮度保持効果, LED総合フォーラム2019 in 徳島, 77-78, Feb. 2019.
12.	Retsuo Kawakami, Katsuyuki Miyawaki, Akihiro Shirai, 東知里, 芳谷勇樹, 吉岡誠人, 南雄也, 山路諭, 吉田雅彦, 大西和男 and 大野民之助 : LED照射下での光触媒ナノ複合材の鮮度保持機能, LED総合フォーラム2018 in 徳島, 125-126, Feb. 2018.
13.	Retsuo Kawakami, Katsuyuki Miyawaki, Akihiro Shirai, 東知里, 冨士本賢吾, 大塩誠二, 山路諭, 吉田雅彦, 大西和男, 大野民之助 and 松下俊雄 : LED光触媒ナノ粒子を使った鮮度保持技術の開発, LED総合フォーラム2016 in 徳島, 157-160, Dec. 2016.
14.	荒木佑馬, 新部正人, Retsuo Kawakami, 竹平徳崇 and 中野由崇 : 酸素プラズマ処理したTiO2薄膜のXPSおよびNEXAFS法による組成・ダメージと触媒活性の相関, 第52回X線分析討論会, Oct. 2016.
15.	Retsuo Kawakami, Katsuyuki Miyawaki, 玉谷元, 東知里, 宇野久史, 大塩誠二, 山路諭, 吉田雅彦, 大西和男, 大野民之助 and 松下俊雄 : LED光触媒に基づく鮮度保持技術のスケールアップ化, LED総合フォーラム2015 in 徳島, 117-120, Dec. 2015.
16.	荒木佑馬, 新部正人, Retsuo Kawakami, 竹平徳崇 and 中野由崇 : TiO2薄膜のプラズマ処理試料のXPS法による組成と触媒活性の相関, 第51回X線分析討論会, Oct. 2015.
17.	Retsuo Kawakami, Katsuyuki Miyawaki, 玉谷元, 榎木一史, 白濱達夫, 大塩誠二, 山路諭, 吉田雅彦 and 前田鎮廣 : 鮮度保持のためのLED光触媒技術に関する研究, LED総合フォーラム2014-2015 in 徳島, 137-140, Jan. 2015.
18.	Retsuo Kawakami, 高畑麻里, 白濱達夫, 大塩誠二, 山路諭, 播岡好之, 吉田雅彦, 荒巻広至 and 前田鎮廣 : LED光触媒技術を用いた果実の鮮度保持効果, BioOpt Japan 2013, Oct. 2013.
19.	Retsuo Kawakami, 高畑麻里, 白濱達夫, 大塩誠二, 山路諭, 播岡好之, 吉田雅彦, 荒巻広至 and 前田鎮廣 : LED光触媒技術を用いた果実の鮮度保持効果, 第3回次世代ものづくり基盤技術産業展 TECH Biz EXPO 2013, Oct. 2013.
20.	新部正人, 佐野桂治, Retsuo Kawakami and 中野由崇 : エッチングしたTiO2薄膜のTi-L NEXAFSに見られる乱れた構造の紫外線照射による回復, 第49回X線分析討論会, Sep. 2013.
21.	Retsuo Kawakami, 板東由季, 白濱達夫, 大塩誠二, 山路諭, 播岡好之, 吉田雅彦, 荒巻広至 and 前田鎮廣 : LED光触媒による果実の新規汎用型鮮度保持技術の開発研究, LED総合フォーラム2013 in 徳島, 77-78, Apr. 2013.
22.	小高拓也, 新部正人, Retsuo Kawakami, 中野由崇 and 向井孝志 : N2プラズマによるGaNエッチングダメージの分析, 第48回X線分析討論会, Oct. 2012.
23.	新部正人, 佐野桂治, 小高拓也, Retsuo Kawakami, Kikuo Tominaga and 中野由崇 : エッチングしたTiO2薄膜の軟X線照射による乱れた構造の回復, 第48回X線分析討論会, Oct. 2012.
24.	Retsuo Kawakami, 武市敦, 髙月成俊, 大塩誠二, 小倉長夫, 小西将士, 森祐太, 桜間健太郎, Takeshi Inaoka and Kikuo Tominaga : UV/OHラジカルジェット殺菌と可視光LED光触媒酸化還元による果実の鮮度保持技術, LED総合フォーラム2012 in 徳島, 103-104, Apr. 2012.
25.	Retsuo Kawakami, 武市敦, 兒玉宗久, 新居厚子, 小倉長夫, 小西将士, 森祐太, Takeshi Inaoka and Kikuo Tominaga : UV-LED光触媒酸化とプラズマジェット殺菌作用による果実の鮮度保持テクノロジーの研究開発, LED総合フォーラム2011 in 徳島, 105-106, Jun. 2011.
26.	新部正人, 小高拓也, Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : 希ガスプラズマでエッチングしたn-GaN結晶のNEXAFS測定によるダメージ解析, 2011先端技術セミナー，高度産業科学技術研究所主催, 65, Mar. 2011.
27.	Retsuo Kawakami : 果実の汎用型鮮度維持装置(JST成果の一部としてLED光触媒装置の出展参加), 徳島ビジネスチャレンジメッセ2010, Oct. 2010.
28.	Retsuo Kawakami : LED光触媒酸化作用を用いた果実の汎用型鮮度保持技術の開発研究, 四国まるごと「食と健康」イノベーション2010∼四国の研究機関が集い「食と健康」リソースを発信∼, Aug. 2010.
29.	Retsuo Kawakami, 福留利章, 武市敦, Takeshi Inaoka and Kikuo Tominaga : UV-LED光触媒反応によるクライマクテリック型果実の汎用型鮮度維持技術の開発研究, LED総合フォーラム2010 in 徳島, 89-92, Apr. 2010.
30.	新部正人, 前田佳恵, Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : プラズマエッチングしたGaN結晶のNEXAFS測定によるダメージ解析, 2010先端技術セミナー，高度産業科学技術研究所主催, Mar. 2010.
31.	Retsuo Kawakami : 果実の汎用型鮮度維持装置, STイノベーションサテライト徳島育成研究報告会平成18年度採択育成研究課題報告, Dec. 2009.
32.	Retsuo Kawakami : UV-LEDによる光触媒酸化作用を用いた果実の汎用型鮮度維持装置の開発研究, 第三回技術シーズ発表会 in 四国 ∼四国発!地域元気の取組みについて∼, Nov. 2009.
33.	新部正人, 前田佳恵, Retsuo Kawakami, Takeshi Inaoka, Kikuo Tominaga and 向井孝志 : プラズマエッチングしたGaN結晶のN-K吸収計測によるダメージ解析, 第45回X線分析討論会, Nov. 2009.
34.	Naoyuki Shimomura, Retsuo Kawakami, Kenji Teranishi and Kikuo Tominaga : Discussion of Introductory Education and First Year Education, --- Based on Questionnaires on Department of Electrical and Electronic Engineering ---, The Papers of Technical Meeting, IEE JAPAN, Vol.FIE-09, No.3, 41-46, Aug. 2009.
35.	Retsuo Kawakami, 下村直行, 富永喜久雄 and 井上廉 : 電気電子工学科における新入生の学業実態 ∼アンケート分析∼, 徳島大学工学部FD工学教育シンポジウム2009, 27-33, Mar. 2009.
36.	Retsuo Kawakami and 大宅薫 : 計算機シミュレーションによるITERダイバータ板の損耗と再堆積, 平成12年度第3回PSI研究会「核融合装置におけるプラズマ対向材料の開発と評価」, 9-16, Feb. 2001.
37.	Jun Kawata, Kaoru Ohya and Retsuo Kawakami : Monte Carlo Simulation of Ion Reflection, Physical Sputtering and Kinetic Electron Emission from Solid Due to Ion Impact, 詫間電波工業高等専門学校研究紀要, No.27, 73-88, Dec. 1999.
38.	Retsuo Kawakami, 大宅薫 and 河田純 : TEXTORにおけるW/Cツインテストリミターの相互汚染と不純物放出の計算機シミュレーション, 核融合科学研究所共同研究研究会「荷電粒子‐中性粒子‐材料複合系としてのダイバータ科学」, Aug. 1999.
39.	Retsuo Kawakami, 奥田慎也, 宮崎隆史 and 生田信皓 : イオン-中性粒子間の相互作用ポテンシャルとイオン輸送特性, 電気学会放電研究会, ED-95-49, 35-44, May 1995.

Report:

1.	Retsuo Kawakami : 紫外線/OHラジカルジェット殺菌と可視光LED光触媒酸化還元作用による果実の鮮度保持テクノロジー開発, 平成23年度JST研究成果最適展開支援プログラムA-STEP, フィージビリティスタディ【FS】ステージ探索タイプ, 日本, Mar. 2012.
2.	Retsuo Kawakami : 自己無撞着なアルゴンプラズマによる窒化ガリウムエッチングダメージの解析, 平成22年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2012.
3.	一樂浩之, 笠谷武司, 田中義浩, 衣斐八束, 福井明, Retsuo Kawakami and 稲岡武 : 果実殺菌のための紫外線/ラジカルジェットデバイスの開発研究, 財団法人阿波銀行学術・文化振興財団,平成22年度(第15回)学術部門助成(地域共同研究助成, 日本, Mar. 2011.
4.	Retsuo Kawakami : プラズマイオンと紫外光線のシナジー効果によるワイドギャップ半導体エッチングダメージの振舞い, 平成22年度先端工学教育研究プロジェクト, 日本, Mar. 2011.
5.	Retsuo Kawakami : 高周波キセノンプラズマによる自己無撞着な衝撃粒子エネルギー分布及び粒子束の解析, 平成22年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2011.
6.	Retsuo Kawakami : 分光計測(反射・透過・膜厚)システム一式, 徳島大学外部資金に係わる間接経費(学長裁量経費), 日本, Mar. 2010.
7.	Retsuo Kawakami : UV-LEDによる薄膜系TiO2の光触媒反応活性化のための大気圧空気プラズマナノ表面処理技術の開発研究, 徳島大学研究連携推進機構(知的財産本部),産学連携研究者育成支援事業, 日本, Mar. 2010.
8.	Retsuo Kawakami : 高周波クリプトンプラズマによる自己無撞着な衝撃粒子エネルギー分布及び粒子束の解析, 平成21年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2010.
9.	Retsuo Kawakami : UV-LEDによる光触媒酸化作用を用いた果実の汎用型鮮度維持装置の開発研究, JSTイノベーションサテライト徳島,平成20年度シーズ発掘試験(A), 日本, Mar. 2009.
10.	Retsuo Kawakami : UV-LEDと光触媒のシナジー効果による果実の鮮度維持技術の開発研究, 徳島大学研究連携推進機構(知的財産本部),産学連携研究者育成支援事業, 日本, Mar. 2009.
11.	Retsuo Kawakami : 高周波アルゴンプラズマによる衝撃粒子エネルギー分布と粒子束の解析, 平成20年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2009.
12.	Retsuo Kawakami : 窒化物系半導体デバイスのためのプラズマ誘因ダメージレスナノプロセス装置の研究開発, 平成20年度教育研究等支援事業(学長裁量経費)報告書, 日本, Jan. 2009.
13.	Retsuo Kawakami : ワイドギャップ半導体用の高性能・低コスト・ドライ洗浄装置の開発, JSTイノベーションサテライト徳島,平成19年度研究成果実用化検討(FS)研究報告書, 日本, Apr. 2008.
14.	Retsuo Kawakami : 紫外線LEDを利用した柑橘類の品質維持の可能性に関する研究, 財団法人阿波銀行学術・文化振興財団,平成19年度(第12回)学術部門助成報告書, 日本, Apr. 2008.
15.	Retsuo Kawakami : 窒化物系半導体デバイスのためのプラズマ誘因ダメージレスナノプロセス装置の研究開発, 平成19年度教育研究等支援事業(学長裁量経費)報告書, 日本, Mar. 2008.
16.	Retsuo Kawakami : 高周波プラズマの自己組織化と材料損耗特性との相関性, 平成19年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2008.
17.	Retsuo Kawakami : ITERのプラズマ対向壁材としてのタングステンの可能性に関する研究, 平成17-18年度科学研究費補助金, 若手研究(B), 日本, Mar. 2007.
18.	Retsuo Kawakami : プラズマの自己組織化と材料の損耗特性との関連性に関する研究, 平成18年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2007.
19.	Retsuo Kawakami : SOLプラズマ中の炭素不純物によるタングステン材表面の損耗変化に関する研究, 平成17年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2006.
20.	Retsuo Kawakami : デタッチプラズマ照射下の炭素材から放出された炭素不純物の振舞いに関する研究, 平成16年度核融合科学研究所LHD数値解析システム利用共同研究報告書, 日本, Mar. 2005.
21.	Retsuo Kawakami : リミタープラズマ照射によるタングステン材表面上の混成層の成長とその材料寿命への影響に関する研究, 平成15年度核融合科学研究所汎用計算機利用共同研究, 日本, Mar. 2004.
22.	Retsuo Kawakami : 炭素不純物を含むプラズマと固体壁との相互作用シミュレーション, 平成14年度核融合科学研究所汎用計算機利用共同研究, 日本, Mar. 2003.

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

Photocatalytic activity of titanium oxide nanoparticles treated by heat-assisted atmospheric pressure oxygen plasma (Project/Area Number: 20K03917 )
Elucidation of UV irradiation effect in plasma etching process of wide gap semiconductors (Project/Area Number: 26390066 )
ITERのプラズマ対向壁材としてのタングステンの可能性に関する研究 (Project/Area Number: 17760667 )
Search by Researcher Number (30314842)

Associate Professor : Kawakami, Retsuo

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Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)