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Tokushima University ⟩ Institute of Post-LED Photonics ⟩
Tokushima University ⟩ Faculty of Science and Technology ⟩ Department of Science and Technology ⟩ Electrical and Electronic Engineering ⟩ Material Science and Device ⟩
Tokushima University ⟩ Research Clusters ⟩ Research Clusters (Registered) ⟩ 2203022 単結晶大面積グラフェンを利用したイオン・バイオセンサプラットフォームの開発 ⟩
Tokushima University ⟩ Graduate School of Advanced Technology and Science ⟩ Systems Innovation Engineering ⟩ Electrical and Electronic Engineering ⟩ Material and Device Science ⟩
Tokushima University ⟩ Graduate School of Sciences and Technology for Innovation ⟩ Science and Technology ⟩ Electrical and Electronic Engineering ⟩ Material Science and Device ⟩
Tokushima University ⟩ Graduate School of Technology, Industrial and Social Sciences ⟩ Division of Science and Technology ⟩ Electrical and Electronic Engineering ⟩ Material Science and Device ⟩ 		(Files for researchmap) [PDF manual] [Auto-propagate to researchmap]

Profile

Portrait
Name
Nagase, Masao
Title
Professor
Year of Birth
1959 A.D.
Phone
+81 - 88 - 656 - 9716
E-mail
 n a g a s e (@) e e ₍.₎ t o k u s h i m a - u ₍.₎ a c ₍.₎ j p 
Academic Background
1982.   3. Graduated from Waseda University.
1984.   3. 早稲田大学大学院 理工学研究科 物理学及応用物理学専攻 修了
1997.   3. Dr. Eng. (Waseda University)
Academic Degree
Dr. Eng. (Waseda University) (Mar. 1997)
Work History
1984.   4. 日本電信電話公社 厚木電気通信研究所 入所
1987.   7. 日本電信電話(株)LSI研究所
1996.   7. 日本電信電話(株)基礎研究所
1999.   1. 日本電信電話(株)NTT物性科学基礎研究所
2010.   4. Professor at the University of Tokushima.
Field of Study
○ Semiconductor Device Physics
Personal Web Page
○ http://graphene.ee.tokushima-u.ac.jp/
○ https://researchmap.jp/nagase_masao (researchmap)
○ https://orcid.org/0000-0002-2550-0146 (ORCID)