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Profile

Portrait
Name
Nagase, Masao
Year of Birth
1959 A.D.
Academic Background
1982.   3. Graduated from Waseda University.
1984.   3. 早稲田大学大学院 理工学研究科 物理学及応用物理学専攻 修了
1997.   3. Dr. Eng. (Waseda University)
Academic Degree
Dr. Eng. (Waseda University) (Mar. 1997)
Work History
1984.   4. 日本電信電話公社 厚木電気通信研究所 入所
1987.   7. 日本電信電話(株)LSI研究所
1996.   7. 日本電信電話(株)基礎研究所
1999.   1. 日本電信電話(株)NTT物性科学基礎研究所
2010.   4. Professor at the University of Tokushima.
Date of Retired
2025.  3.31

(Display only working histories at our university after 2004.)

Field of Study
Semiconductor Device Physics
Personal Web Page
http://graphene.ee.tokushima-u.ac.jp/
https://researchmap.jp/nagase_masao (researchmap)
https://orcid.org/0000-0002-2550-0146 (ORCID)