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Tokushima University > Research Clusters > Research Clusters (Prioritized) > 1702003 グラフェニクスのための高感度センサ・テラヘルツ光発光素子の開発 >
Tokushima University > Research Clusters > Research Clusters (Registered) > 1704102 次世代電子デバイスに向けた新機能性材料の作製法の開発 >
Tokushima University > Graduate School of Advanced Technology and Science > Systems Innovation Engineering > Electrical and Electronic Engineering > Material and Device Science >
Tokushima University > Faculty of Engineering > Department of Electrical and Electronic Engineering > Material Science and Device >
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Research Activity

Field of Study

Semiconductor Device Physics

Subject of Study

半導体デバイスの開発とナノ物性評価技術の研究 (semiconductor device, nanostructure, silicon, graphene, nanometrology)

Book / Paper

Book:

1.Masao Nagase and 他 :
Integration Technology for Heterogeneous Advanced Devices: Basics and Applications,
CMC Publishing Co.,Ltd., Tokyo, Apr. 2019.
2.Masao Nagase and 他 :
ナノカーボンの応用と実用化,
CMC Publishing Co.,Ltd., Tokyo, Oct. 2017.
3.Masao Nagase and 他 :
グラフェンの機能と応用展望,
CMC Publishing Co.,Ltd., Tokyo, Sep. 2015.
4.Masao Nagase and 他 :
Integration Technology for Heterogeneous Advanced Devices: Basics and Applications,
CMC Publishing Co.,Ltd., Tokyo, Nov. 2012.
5.Hiroki Hibino, Masao Nagase and 他 :
グラフェンが拓く材料の新領域,
エヌティーエス, Tokyo, Jun. 2012.
6.Masao Nagase and 他 :
ナノカーボンの応用と実用化,
CMC Publishing Co.,Ltd., Tokyo, Jul. 2011.
7.Masao Nagase and 他 :
マクロ観察と新型顕微技法Q&A,
アグネ承風社, 東京, Oct. 2010.
8.Masao Nagase and 他 :
グラフェンの機能と応用展望,
CMC Publishing Co.,Ltd., Tokyo, Jul. 2009.
9.Masao Nagase :
Yearbook of Science & Technology 2007, --- Nanometrology ---,
The McGraw-Hill Companies, New York, Jan. 2007.
10.Masao Nagase and 他 :
先端の分析法,
NTS Inc., Tokyo, Dec. 2004.
11.Masao Nagase and 他 :
ナノテクノロジーのための走査電子顕微鏡,
丸善出版, Tokyo, Feb. 2004.

Academic Paper (Judged Full Paper):

1.Kujime Takaya, Taniguchi Yoshiaki, Akiyama Daiu, Kawamura Yusuke, Kanai Yasushi, Matsumoto Kazuhiko, Yasuhide Ohno and Masao Nagase :
High Stability of Epitaxial Graphene on a SiC Substrate,
Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.256, 1900357, 2019.
(DOI: 10.1002/pssb.201900357)
2.Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa and Mikito Yasuzawa :
Observation of the interaction between avidin and iminobiotin using a graphene FET on a SiC substrate,
Japanese Journal of Applied Physics, Vol.58, No.SD, SDDD02, 2019.
(DOI: 10.7567/1347-4065/ab0544,   Elsevier: Scopus)
3.Du Jiyao, Kimura Yukinobu, Tahara Masaaki, Matsui Kazushi, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Vertically stacked graphene tunnel junction with structured water barrier,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.58, No.SD, SDDE01-(4pp), 2019.
(Tokushima University Institutional Repository: 113469,   DOI: 10.7567/1347-4065/ab0891)
4.Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
Suppression of protein adsorption on a graphene surface by phosphorylcholine functionalization,
Japanese Journal of Applied Physics, Vol.58, No.5, 055001, 2019.
(DOI: 10.7567/1347-4065/ab0b37,   Elsevier: Scopus)
5.Kitaoka Makoto, Nagahama Takuya, Nakamura Kohta, Aritsuki Takuya, Takashima Kazuya, Yasuhide Ohno and Masao Nagase :
Carrier doping effect of humidity for single-crystal graphene on SiC,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.56, No.8, 085102-(4pp), 2017.
(Tokushima University Institutional Repository: 111938,   DOI: 10.7567/JJAP.56.085102)
6.Taniguchi Yoshiaki, Miki Tsubasa, Mitsuno Takanori, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
Fabrication of hydrophilic graphene film by molecular functionalization,
Physica Status Solidi (B) Basic Solid State Physics : PSS, Vol.254, No.2, 1600524-(4pp), 2016.
(DOI: 10.1002/pssb.201600524)
7.Hisatomo Matsumura, Shin-ichiro Yanagiya, Masao Nagase, Hiroki Kishikawa and Nobuo Goto :
Microscopic Raman Study of Graphene on 4H-SiC Two-Dimensionally Enhanced by Surface Roughness and Gold Nanoparticles,
Japanese Journal of Applied Physics, Vol.55, No.6S1, 06GL05, 2016.
(Tokushima University Institutional Repository: 111013,   DOI: 10.7567/JJAP.55.06GL05)
8.Yasuhide Ohno, Kanai Yasushi, Mori Yuki, Masao Nagase and Matsumoto Kazuhiko :
Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates,
Japanese Journal of Applied Physics, Vol.55, No.6S1, 06GF09, 2016.
(DOI: 10.7567/JJAP.55.06GF09,   Elsevier: Scopus)
9.Aritsuki Takuya, Nakashima Takeshi, Kobayashi Keisuke, Yasuhide Ohno and Masao Nagase :
Epitaxial graphene on SiC formed by the surface structure control technique,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.55, No.6, 06GF03-(4pp), 2016.
(Tokushima University Institutional Repository: 110895,   DOI: 10.7567/JJAP.55.06GF03,   Elsevier: Scopus)
10.O Ryong-Sok, Takamura Makoto, Furukawa Kazuaki, Masao Nagase and Hiroki Hibino :
Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.54, No.3, 036502-(5pp), 2015.
(Tokushima University Institutional Repository: 110896,   DOI: 10.7567/JJAP.54.036502,   CiNii: 120006365859,   Elsevier: Scopus)
11.Yoshiaki Sekine, Hiroki Hibino, 小栗 克弥, 岩本 篤, Masao Nagase, 影島 博之, 佐々木 健一 and 赤崎 達志 :
Surface-Enhanced Raman Scattering of Graphene on SiC by Gold Nanoparticles,
The Review of Laser Engineering, Vol.42, No.8, 652-657, 2014.
(CiNii: 40020187892)
12.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001),
Materials Science Forum, Vol.778-780, 1150-1153, 2014.
(DOI: 10.4028/www.scientific.net/MSF.778-780.1150,   Elsevier: Scopus)
13.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface,
Physical Review B, Condensed Matter and Materials Physics, Vol.88, No.23, 235405-(7pp), 2013.
(DOI: 10.1103/PhysRevB.88.235405)
14.O Ryongsok, Atsushi Iwamoto, Yuki Nishi, Yuya Funase, Takahiro Yuasa, Takuro Tomita, Masao Nagase, Hiroki Hibino and Hiroshi Yamaguchi :
Microscopic Raman mapping of epitaxial graphene on 4H-SiC (0001),
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.51, No.6, 06FD06-(5pp), 2012.
(Tokushima University Institutional Repository: 110898,   DOI: 10.1143/JJAP.51.06FD06,   CiNii: 210000140722)
15.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine and Hiroshi Yamaguchi :
Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects,
AIP Conference Proceedings, Vol.1399, 755-756, 2011.
(DOI: 10.1063/1.3666596)
16.Y. Ono, Y. Miyazaki, S. Yabuuchi, Hiroyuki Kageshima, Masao Nagase, A. Fujiwara and E. Ohta :
Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon,
Thin Solid Films, Vol.519, No.24, 8505-8508, 2011.
(DOI: 10.1016/j.tsf.2011.05.027)
17.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
Carrier transport mechanism in graphene on SiC(0001),
Physical Review B, Condensed Matter and Materials Physics, Vol.84, No.11, 115458-(5pp), 2011.
(DOI: 10.1103/PhysRevB.84.115458)
18.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.50, No.9, 095601-(6pp), 2011.
(DOI: 10.1143/JJAP.50.095601,   CiNii: 210000139571)
19.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine and Hiroshi Yamaguchi :
Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.50, No.7, 070115-(5pp), 2011.
(DOI: 10.1143/JJAP.50.070115,   CiNii: 210000070798)
20.Teruaki Takeuchi, Kosuke Tatsumura, Iwao Ohdomari, Takayoshi Shimura and Masao Nagase :
X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections,
Physica B : Condensed Matter, Vol.406, No.13, 2559-2564, 2011.
(DOI: 10.1016/j.physb.2011.03.064)
21.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
Observation of band gap in epitaxial bilayer graphene field effect transistors,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.50, No.4, 04DN04-(4pp), 2011.
(DOI: 10.1143/JJAP.50.04DN04,   CiNii: 210000070405)
22.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC,
Materials Research Society Symposia Proceedings, Vol.1283, opl.2011.675-(6pp), 2011.
(DOI: 10.1557/opl.2011.675)
23.Kei Takashina, Masao Nagase, K Nishiguchi, Y Ono, H Omi, A Fujiwara, T Fujisawa and K Muraki :
Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding,
Semiconductor Science and Technology, Vol.25, No.12, 125001-(4pp), 2010.
(DOI: 10.1088/0268-1242/25/12/125001)
24.Hiroki Hibino, Hiroyuki Kageshima and Masao Nagase :
Epitaxial few-layer graphene: toward single crystal growth,
Journal of Physics D: Applied Physics, Vol.43, No.37, 374005-(14pp), 2010.
(DOI: 10.1088/0022-3727/43/37/374005)
25.Masao Nagase, Kojiro Tamaru, Keiichiro Nonaka, Shinichi Warisawa, Sunao Ishihara and Hiroshi Yamaguchi :
Direct Actuation of GaAs Membrane Resonator by Scanning Probe,
NTT Technical Review, Vol.8, rp1-(7pp), 2010.
(Elsevier: Scopus)
26.Hiroki Hibino, Hiroyuki Kageshima and Masao Nagase :
Graphene Growth on Silicon Carbide,
NTT Technical Review, Vol.8, sf4-(6pp), 2010.
(Elsevier: Scopus)
27.Hiroyuki Kageshima, Hiroki Hibino and Masao Nagase :
Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles,
Materials Science Forum, Vol.645-648, 597-602, 2010.
(DOI: 10.4028/www.scientific.net/MSF.645-648.597)
28.Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi :
Local Conductance Measurement of Double-layer Graphene on SiC Substrate,
Nanotechnology, Vol.20, No.44, 445704-(6pp), 2009.
(DOI: 10.1088/0957-4484/20/44/445704,   PubMed: 19809118)
29.Hiroki Hibino, S Mizuno, Hiroyuki Kageshima, Masao Nagase and Hiroshi Yamaguchi :
Stacking domains of epitaxial few-layer graphene on SiC(0001),
Physical Review B, Condensed Matter and Materials Physics, Vol.80, No.8, 085406-(6pp), 2009.
(DOI: 10.1103/PhysRevB.80.085406)
30.Keiichiro Nonaka, Kojiro Tamaru, Masao Nagase, Hiroshi Yamaguchi, Shinichi Warisawa and Sunao Ishihara :
Evaluation of Thermal Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.48, No.6, 06FG07-(5pp), 2009.
(DOI: 10.1143/JJAP.48.06FG07,   CiNii: 40016627295)
31.Kojiro Tamaru, Keiichiro Nonaka, Masao Nagase, Hiroshi Yamaguchi, Shinichi Warisawa and Sunao Ishihara :
Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy,
Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Vol.48, No.6, 06FG06-(5pp), 2009.
(DOI: 10.1143/JJAP.48.06FG06,   CiNii: 210000066954)

Academic Paper (Unrefereed Paper):

1.Masao Nagase :
Heterogeneous Integration on Graphene Substrate,
Journal of Japan Institute of Electronics Packaging, Vol.20, No.6, 382-386, 2017.
(Tokushima University Institutional Repository: 110893,   DOI: 10.5104/jiep.20.382,   CiNii: 130006038632,   Elsevier: Scopus)
2.Masao Nagase :
Study on Fabrication Method of High Quality Graphene,
Bulletin of Institute of Technology and Science, The University of Tokushima, Vol.60, 1-10, 2015.
(Tokushima University Institutional Repository: 111035)
3.Masao Nagase :
Study on Graphene Composite Properties for New Functional Devices,
Bulletin of Institute of Technology and Science, The University of Tokushima, Vol.58, 13-21, 2013.
(Tokushima University Institutional Repository: 105974)
4.Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi :
Metrology of microscopic properties of graphene on SiC, --- [Invited Paper] ---,
IEICE Technical Report, Vol.109, No.97, 47-52, 2009.
(CiNii: 110007338353)

Academic Letter:

1.Mitsuno Takanori, Taniguchi Yoshiaki, Yasuhide Ohno and Masao Nagase :
Ion sensitivity of large-area epitaxial graphene film on SiC substrate,
Applied Physics Letters, Vol.111, 213103-(4pp), 2017.
(DOI: 10.1063/1.4994253)
2.Nishiguchi Katsuhiko, Yoshizumi Daisuke, Sekine Yoshiaki, Furukawa Kazuaki, Fujiwara Akira and Masao Nagase :
Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice,
Applied Physics Express, Vol.9, No.10, 105101-(4pp), 2016.
(DOI: 10.7567/APEX.9.105101)
3.Keisuke Kobayashi, Shinichi Tanabe, Takuto Tao, Toshio Okumura, Takeshi Nakashima, Takuya Aritsuki, Ryong-Sok O and Masao Nagase :
Resistivity anisotropy measured using four probes in epitaxial graphene on silicon carbide,
Applied Physics Express, Vol.8, No.2, 036602-(3pp), 2015.
(Tokushima University Institutional Repository: 110900,   DOI: 10.7567/APEX.8.036602,   Elsevier: Scopus)
4.Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi :
Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio,
Applied Physics Express, Vol.6, No.4, 055101-(3pp), 2013.
(Tokushima University Institutional Repository: 110901,   DOI: 10.7567/APEX.6.055101,   CiNii: 40019650776)
5.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine and Hiroshi Yamaguchi :
Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces,
Applied Physics Express, Vol.3, No.11, 115103-(3pp), 2010.
(DOI: 10.1143/APEX.3.115103,   CiNii: 10027442141)
6.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices,
Applied Physics Express, Vol.3, No.7, 075102-(3pp), 2010.
(DOI: 10.1143/APEX.3.075102,   CiNii: 10026495507)
7.Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi :
Contact Conductance Measurement of Locally Suspended Graphene on SiC,
Applied Physics Express, Vol.3, No.4, 045101-(3pp), 2010.
(DOI: 10.1143/APEX.3.045101,   CiNii: 40017084778)
8.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase and Hiroshi Yamaguchi :
Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces,
Applied Physics Express, Vol.2, No.6, 065502-(3pp), 2009.
(DOI: 10.1143/APEX.2.065502,   CiNii: 10025086838)

Review, Commentary:

1.Masao Nagase :
Observation of graphene on SiC using various types of microscopy,
THE HITACHI SCIENTIFIC INSTRUMENT NEWS, Vol.7, 8-16, Sep. 2016.
2.Masao Nagase :
Observation of graphene on SiC using various types of microscopy,
THE HITACHI SCIENTIFIC INSTRUMENT NEWS, Vol.58, No.2, 5027-5034, Sep. 2015.
3.Masao Nagase :
Growth of High-quality Single-crystal Graphene,
月刊機能材料, Vol.34, No.5, 28-35, May 2014.
(CiNii: 40020086291)
4.Yoshiaki Sekine, Hiroki Hibino, Katsuya OGURI, Tatsushi AKAZAKI, Hiroyuki Kageshima, Masao Nagase, Kenichi SASAKI and Hiroshi Yamaguchi :
SiC上グラフェンの表面増強ラマン散乱,
NTT技術ジャーナル, Vol.25, No.6, 22-26, Jun. 2013.
(CiNii: 40019698395)
5.Masao Nagase :
高速高温アニール装置によるグラフェン形成,
''熱技術''30年の歩み, 9-13, Apr. 2012.
6.Masao Nagase :
グラフェン研究の現状と新規材料としての可能性,
炭素材料の研究開発動向 2011, 61-70, May 2011.
7.Hiroki Hibino, Hiroyuki Kageshima, 田邉 真一, Masao Nagase and 水野 清義 :
SiC 上エピタキシャルグラフェンの成長と評価,
固体物理, Vol.45, 645-655, Nov. 2010.
8.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase and Hiroshi Yamaguchi :
Theoretical Study of Epitaxial Graphene Growth on SiC(<Special Topic>Growth of Graphen and its Applications),
Journal of the Japanese Association for Crystal Growth, Vol.37, 190-195, Oct. 2010.
(CiNii: 110007817399)
9.Hiroki HIBINO, Hiroyuki KAGESHIMA and Masao Nagase :
シリコンカーバイド上のグラフェン成長,
NTT技術ジャーナル, Vol.22, No.6, 18-21, Jun. 2010.
(CiNii: 40017159176)
10.Hiroki HIBINO, Hiroyuki KAGESHIMA and Masao Nagase :
Analysis of Number of Layers in Epitaxial Few-Layer Graphene Grown on SiC towards Single-Crystal Graphene Substrate,
Journal of the Vacuum Society of Japan, Vol.53, No.2, 101-108, Feb. 2010.
(DOI: 10.3131/jvsj2.53.101,   CiNii: 130000264180)
11.Masao Nagase :
炭素材料グラフェン,
工業材料, Vol.58, 44-45, Jan. 2010.

Proceeding of International Conference:

1.Masao Nagase :
Single-crystal graphene on SiC substrate for future electronic devices, --- [invited] ---,
Collaborative Conference on Materials Research (CCMR) 2019, Goyang/Gyeonggi, Korea, Jun. 2019.
2.Yasuhide Ohno, Mitsuno Takanori, Taniguchi Yoshiaki and Masao Nagase :
1-aminopyrene-modified epitaxial graphene device for pH sensors,
Proceedings of Compound Semiconductor Week 2019, TuC1-3, May 2019.
3.Kujime Takaya, Taniguchi Yoshiaki, Akiyama Daiu, Kawamura Yusuke, Yasuhide Ohno and Masao Nagase :
High Stability of the epitaxial graphene film on SiC substrate,
Proceedings of Compound Semiconductor Week 2019, MoP-1-10, May 2019.
4.Ono Ryosuke, Masashi Kurashina, Mikito Yasuzawa, Yasuhide Ohno and Masao Nagase :
Fabrication of Nanopillars Using Focus Ion Beam-Chemical Vapor Deposition Method,
5th International Forum on Advanced Technologies, Taipei, Mar. 2019.
5.Du Jiyao, Kimura Yukinobu, Tahara Masaaki, Matsui Kazushi, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Vertically stacked graphene tunnel junction with ultrathin water layer barrier,
31th International Microprocesses and Nanotechnology Conference (MNC2018), No.16P-11-27, Sapporo, Japan, Nov. 2018.
6.Taniguchi Yoshiaki, Miki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa and Mikito Yasuzawa :
Observation of the interaction between avidin and iminobiotin using graphene FET on SiC substrate,
31th International Microprocesses and Nanotechnology Conference (MNC2018), No.16P-11-3, Sapporo, Japan, Nov. 2018.
7.Masaki Kuzuo, Kazushi Matsui, Yasuhide Ohno and Masao Nagase :
Mechanical Properties of Structured Water Layer on Epitaxial Graphene,
ACSIN-14 & ICSPM26, No.22P032, 42-(0.5pp), Sendai International Center, Sendai, Japan, Oct. 2018.
8.Yasuhide Ohno, Yoshiaki Taniguchi and Masao Nagase :
Electrical characteristics of positively and negatively charged protein adsorption to epitaxial graphene film on SiC substrate,
Proceedings of 2017 Workshop on Innovative Nanoscale Devices and Systems, Nov. 2017.
9.Kitaoka Makoto, Nakamura Kota, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Water adsorption and desorption for graphene on SiC,
International Symposium on Epitaxial Graphene 2017 (ISEG-2017), No.P6, 44, Nagoya, Japan, Nov. 2017.
10.Taniguchi Yoshiaki, Milki Tsubasa, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
Intrinsic response of protein adsorption to graphene film on SiC substrate,
Proceedings of 2017 International Conference on Solid State Devices and Materials, Sep. 2017.
11.Tsuyoshi Tsuda, Mikito Yasuzawa, Yasuhide Ohno and Masao Nagase :
Electrical characteristic evaluation of Graphene on SiC,
International Conference on Advanced Materials Development and Performance 2017, Pune, Jul. 2017.
12.Masao Nagase :
Large-scale epitaxial graphene fabricated by high-temperature graphitization of SiC substrate, --- [Plenary] ---,
International Conference on Advanced Materials Development & Performance (AMDP) 2017, Pune, India, Jul. 2017.
13.Masao Nagase :
Single-Crystal graphene on SiC substrate: growth and applications, --- [invited] ---,
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Gyeongju, Korea, Jul. 2017.
14.Masao Nagase :
Epitaxial graphene on SiC for new functional devices, --- [invited] ---,
Collaborative Conference on Materials Research (CCMR) 2017, Jeju, Korea, Jun. 2017.
15.Yasuhide Ohno, Takanori Mitsuno, Yoshiaki Taniguchi and Masao Nagase :
Intrinsic ion sensitivity of graphene field-effect transistors,
2016 Workshop on Innovative Nanoscale Devices and Systems, Dec. 2016.
16.Kitaoka Makoto, Nagahama Takuya, Nakamura Kohta, Takashima Kazuya, Yasuhide Ohno and Masao Nagase :
Carrier doping effect of humidity for single-crystal graphene on SiC,
29th International Microprocesses and Nanotechnology Conference (MNC2016), No.11P-11-24, Kyoto, Japan, Nov. 2016.
17.Taniguchi Yoshiaki, Miki Tsubasa, Mitsuno Takanori, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
Protein adsorption characteristics on bare and phosphorylcholine-modified graphene films on SiC substrate,
29th International Microprocesses and Nanotechnology Conference (MNC2016), No.11P-11-16, Kyoto, Japan, Nov. 2016.
18.Takanori Mitsuno, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
Intrinsic pH Sensitivity of Graphene Field-Effect Transistors,
The 43rd International Symposium on Compound Semiconductor, Jun. 2016.
19.Yoshiaki Taniguchi, Tsubasa Miki, Takanori Mitsuno, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
Hydrophilic Graphene Film by Molecular Functionalization,
The 43rd International Symposium on Compound Semiconductor, Jun. 2016.
20.Masao Nagase :
Single-crystal graphene growth on SiC by infrared rapid thermal annealing, --- [invited] ---,
2016 Collaborative Conference on 3D and Materials Research(CC3DMR), inchon, Korea, Jun. 2016.
21.Hisatomo Matsumura, Shin-ichiro Yanagiya, Nobuo Goto, Hiroki Kishikawa, Masao Nagase, Akihiro Furube and Hsu Shih-Hsiang :
SERS study of gold nanoparticles deposited on graphene epitaxially grown on SiC,
International Forum on Advanced Technologies (IFAT2016), Tokushima, Vol.P2-20, Tokushima, Mar. 2016.
22.Yoshizumi D., Nishiguchi K., Yoshiaki Sekine, Furukawa K., Fujiwara A. and Masao Nagase :
Electron emission using multilayered-graphene/SiO2/Si heterodevice driven with low-voltage supply in low vacuum,
28th International Microprocesses and Nanotechnology Conference (MNC2015), No.13P-11-104L, Toyama, Japan, Nov. 2015.
23.Yasuhide Ohno, Masao Nagase and Matsumoto Kazuhiko :
Top-gated graphene field-effect transistors by low-temperature synthesized SiNx insulator on SiC substrates,
28th International Microprocesses and Nanotechnology Conference (MNC2015), No.12P-7-28, Toyama, Japan, Nov. 2015.
24.Aritsuki Takuya, Nakashima Takeshi, Kobayashi Keisuke, Yasuhide Ohno and Masao Nagase :
High quality graphene on SiC formed by the surface structure control technique,
28th International Microprocesses and Nanotechnology Conference (MNC2015), No.12P-7-16, Toyama, Japan, Nov. 2015.
25.Masao Nagase :
Graphene on SiC substrates fabricated by an infrared rapid thermal annealer, --- [invited] ---,
3rd International Conference on Nanotechnology (NANOCON 014), Pune, India, Oct. 2014.
26.Kageshima Hiroyuki, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Theoretical studies of graphene on SiC, --- [invited] ---,
The 6th IEEE International Nanoelectronics Conference (INEC2014), Sapporo, Jul. 2014.
(DOI: 10.1109/INEC.2014.7460437,   Elsevier: Scopus)
27.Masao Nagase :
Epitaxial graphene grown by infrared rapid thermal annealing, --- [invited] ---,
The 6th IEEE International Nanoelectronics Conference (INEC2014), Sapporo, Jul. 2014.
28.Masao Nagase :
Nano-electrical and mechanical properties of graphene on SiC substrate, --- [Invited] ---,
Quantum Science Symposium ASIA-2013 Meeting, Tokyo, Nov. 2013.
29.O Ryongsok, Takamura Makoto, Furukawa Kazuaki, Masao Nagase and Hiroki Hibino :
Effects of UV light on electrochemical wet etching of silicon carbide for suspended graphene fabrication,
26th International Microprocesses and Nanotechnology Conference (MNC2013), No.8P-11-20, Sapporo, Japan, Nov. 2013.
30.Takuto Tao, Toshio Okumura, Nakashima Takeshi, O Ryongsok and Masao Nagase :
Highly uniform mono-layer graphene on SiC,
5th International Conference on Recent Progress in Graphene Research 2013 (RPGR 2013), No.12a-P3-29, Tokyo, Japan, Sep. 2013.
31.Masao Nagase :
グラフェンの基礎物性と応用技術,
Advance Metallization Conf. 2012, 22nd Asian Session (ADMETA Plus 2012): Tutorial, Tokyo, Oct. 2012.
32.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Role of Step in Initial Stage of Graphene Growth on SiC(0001),
International Conference on Physics of Semiconductors (ICPS2012), No.61.45, Zurich, Swiss, Aug. 2012.
33.Masao Nagase, Yuki Nishi, Teruki Isawa and Takuto Tao :
Conductive carbon nanoprobe fabricated by focused ion beam assisted chemical vapor deposition,
International Conference on Nanoscience + Technology 2012 (ICN+T2012/STM'12), Paris, France, Jul. 2012.
34.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Role of steps and edges in epitaxial graphene growth on SiC(0001),
International Symposium on Surface Science -Towards Nano-, Bio-, and Green Inovation-(ISSS-6), No.14amB-1-2, Tokyo, Japan, Dec. 2011.
35.O Ryongsok, Atsushi Iwamoto, Yuki Nishi, Yuya Funase, Takahiro Yuasa, Takuro Tomita, Masao Nagase, Hiroki Hibino and Hiroshi Yamaguchi :
Microscopic Raman mapping for epitaxial graphene on 4H-SiC (0001),
24th International Microprocesses and Nanotechnology Conference (MNC2011), Vol.51, No.6, Kyoto, Japan, Oct. 2011.
(DOI: 10.1143/JJAP.51.06FD06,   Elsevier: Scopus)
36.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001),
2011 International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan, Sep. 2011.
37.Yoshiaki Sekine, Hiroki Hibino, Katsuya Oguri, Tatsushi Akasaki, Hiroyuki Kageshima, Masao Nagase and Hiroshi Yamaguchi :
Surface-enhanced Raman scattering of graphene on SiC,
The 6th International School and Conference on Spintronics and Quantum Infromation Technology (SPINTECH6), No.WP-86, Matsue, Japan, Aug. 2011.
38.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
Theoretical study on epitaxial graphene growth on SiC(0001) surface,
2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011), No.P-24, Tokyo, Japan, Jan. 2011.
39.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine and Hiroshi Yamaguchi :
Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001) surface,
The International Symposium on Nanoscale Transport and Technology (ISNTT2011), No.PWe-10, Atsugi, Japan, Jan. 2011.
40.Yoshiaki Sekine, Hiroki Hibino, Katsuya Oguri, Tatsushi Akasaki, Hiroyuki Kageshima, Masao Nagase and Hiroshi Yamaguchi :
Surface-enhanced Raman spectroscopy of graphene grown on SiC,
The International Symposium on Nanoscale Transport and Technology (ISNTT2011), No.PWe-12, Atsugi, Japan, Jan. 2011.
41.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC,
The 2010 Fall Meeting of the Materials Research Society (MRS), No.B9.2, Boston, USA, Dec. 2010.
42.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine and Hiroshi Yamaguchi :
Theoretical study on growth, structure, and physical properties of graphene on SiC, --- [Invited] ---,
"Japan-Korea Symposium on Surface and Nanostructure 9th" (JKSSN9), Sendai, Japan, Nov. 2010.
43.Masao Nagase :
物性,評価技術,
MNC technical Seminar "Graphene", Kitakyushu, Nov. 2010.
44.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine and Hiroshi Yamaguchi :
Theoretical study on functions of graphene, --- [Invited] ---,
International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan, Oct. 2010.
45.Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi :
Electrical contact properties of few-layer graphene on SiC substrate, --- [Invited] ---,
International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan, Oct. 2010.
46.Hiroki Hibino, Shinichi Tanabe, Hiroyuki Kageshima and Masao Nagase :
Growth, structure, and transport properties of epitaxial graphene on SiC, --- [Invited] ---,
International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan, Oct. 2010.
47.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
Observation of bandgap in epitaxial bilayer graphene field effect transistors,
2010 International Conference on Solid State Devices and Materials (SSDM2010), Sendai, Japan, Sep. 2010.
48.Hiroki Hibino, Hiroyuki Kageshima, Shinichi Tanabe, Masao Nagase, Seigi Mizuno and Satoru Tanaka :
Surface Electron Microscopy of Epitaxial Graphene, --- [Invited] ---,
Second International Symposium on the Science and Technology of Epitaxial Graphene (STEG2), Amelia Island, Florida, USA, Sep. 2010.
49.Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi :
Contact conductance measurement of nano-membrane structure of graphene on SiC,
18th International Vacuum Congress (IVC-18)/International Conference on Nanoscience and Technology (ICN+T 2010)/14th International Conference on Surfaces Science (ICSS-14)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-5), No.P1-EmP1-18, Beijing, China, Aug. 2010.
50.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine and Hiroshi Yamaguchi :
Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects,
30th International Conference on the Physics of Semiconductors (ICPS2010), No.TuD1-2, Seoul, Korea, Jul. 2010.
51.Y. Ono, Y. Miyazaki, S. Yabuuchi, Hiroyuki Kageshima, Masao Nagase, A. Fujiwara and E. Ota :
Significance of the Interface regarding Magnetic Properties of Mn-Nanosilicide in Silicon,
Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010), No.25-AM-IV-4, Tsukuba, Japan, Jul. 2010.
52.Hiroki Hibino, Hiroyuki Kageshima and Masao Nagase :
In-situ surface electron microscopy observations of growth and etching of epitaxial few-layer graphene on SiC, --- [Invited] ---,
International Workshop on "In situ characterization of near surface processes", Eisenerz, Austria, May 2010.

Proceeding of Domestic Conference:

1.Naori Yamazoe, Yuki Ohsaka, Yoshiaki Taniguchi, Masao Nagase, Yasuhide Ohno, Toshihiro Okamoto and Masanobu Haraguchi :
金ナノ粒子のプラズモン加熱を用いた穴あきグラフェンの作製,
レーザー学会学術講演会第39回年次大会, No.14-6, Jan. 2019.
2.Hiromichi Wariishi, Masaki Kuzuo, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
溶液中におけるSiC上グラフェンFETのドリフト評価,
第10回「集積化MEMSシンボジウム」, 01am2-C-5-(3pp), Nov. 2018.
3.Yoshiaki Taniguchi, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa and Mikito Yasuzawa :
SiC 上グラフェンFETを用いたアビジン-イミノビオチン相互作用の観測,
第10回「集積化MEMSシンボジウム」, 01am2-C-1-(3pp), Nov. 2018.
4.Shuta Ochi, Hitoshi Teratani, Makoto Kitaoka, Yasuhide Ohno and Masao Nagase :
SiC上グラフェンの高感度ガス応答,
第10回「集積化MEMSシンボジウム」, 31pm2-C-2-(3pp), Oct. 2018.
5.Yuto Kawagoshi, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
グラフェン FET 特性の緩衝液濃度依存性,
第10回「集積化MEMSシンボジウム」, 30pm2-A-3-(3pp), Oct. 2018.
6.Masaki Kuzuo, Yusuke Yamada, Kazushi Matsui, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
Mechanical Properties of Structured Water Layer on Epitaxial Graphene,
第79回応用物理学会秋季学術講演会(応物2018秋), No.21a-311-14, 15-216-(1pp), Sep. 2018.
7.小野 尭生, Yoshiaki Taniguchi, 牛場 翔太, 金井 康, 前橋 兼三, 井上 恒一, 渡邊 洋平, 中北 愼一, 鈴木 康夫, 河原 敏男, 木村 雅彦, Yasuhide Ohno, Masao Nagase and 松本 和彦 :
Influenza Virus Detection Using Glycan-Functionalized SiC Graphene,
第79回応用物理学会秋季学術講演会(応物2018秋), No.20p-311-4, 15-186-(1pp), Sep. 2018.
8.谷口 嘉昭, 高村 真琴, 谷保 芳孝, Yasuhide Ohno and Masao Nagase :
The characteristics of p-type graphene film for protein adsorptions,
第79回応用物理学会秋季学術講演会(応物2018秋), No.20p-311-3, 15-185-(1pp), Sep. 2018.
9.Daiu Akiyama, Yoshiaki Taniguchi, Yasuhide Ohno and Masao Nagase :
pH dependence of protein adsorption to a graphene film on SiC substrate,
第79回応用物理学会秋季学術講演会(応物2018秋), No.20p-311-2, 15-184-(1pp), Sep. 2018.
10.谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
pH control of avidin adsorption by iminobiotin modified graphene film,
第65回応用物理学会春季学術講演会(応物2018春), No.18a-C202-10, 15-057-(1pp), Mar. 2018.
11.Du Jiyao, Kimura Yukinobu, Tahara Masaaki, Matsui Kazushi, Teratani Hitoshi, Yasuhide Ohno and Masao Nagase :
Vertically stacked graphene tunneling junction with insulative water layer,
第65回応用物理学会春季学術講演会(応物2018春), No.18a-C202-11, 15-058-(1pp), Mar. 2018.
12.Hitoshi Teratani, Makoto Kitaoka, Kazushi Matsui, Masaaki Tahara, Yasuhide Ohno and Masao Nagase :
Evaluation of water doping effect on graphene on SiC,
第65回応用物理学会春季学術講演会(応物2018春), No.17a-C202-7, 15-007-(1pp), Mar. 2018.
13.Masao Nagase :
SiC 上グラフェンのデバイス応用,
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会, I-2-(), Jan. 2018.
14.田原 雅章, 河村 祐輔, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェン高品質化に向けたグラフェン成長過程の解明,
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会, P8-(4pp), Jan. 2018.
15.河村 祐輔, 森本 征士, 北岡 誠, 田原 雅章, Yasuhide Ohno and Masao Nagase :
顕微ラマン分光法による機能化 iC 上グラフェンの応力とキャリア密度の定量評価,
平成 29 年度第1回半導体エレクトロニクス部門委員会・講演会, P9-(4pp), Jan. 2018.
16.谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
分子修飾技術を用いたグラフェン表面のタンパク質吸着抑制,
平成 29 年度第 4 回半導体エレクトロニクス部門委員会・講演会, P10-(4pp), Jan. 2018.
17.谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
ホスホリルコリン修飾グラフェンのタンパク質吸着特性,
第9回「集積化MEMSシンボジウム」, 02am2-B-2-(3pp), Nov. 2017.
18.杉岡 賢人, 谷口 嘉昭, Tsubasa Miki, 田原 雅章, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Keiji Minagawa, Yasushi Imada and Mikito Yasuzawa :
Modified molecule dependence in hydrophilic treatment on SiC graphene,
第78回応用物理学会秋季学術講演会(応物2017秋), No.8a-C16-16, 15-186-(1pp), Sep. 2017.
19.松井 一史, 中村 晃大, 北岡 誠, 谷口 嘉昭, Yasuhide Ohno and Masao Nagase :
Observation of structure water layer graphene on SiC using Kelvin Force Microscope,
第78回応用物理学会秋季学術講演会(応物2017秋), No.7p-C16-14, 15-165-(1pp), Sep. 2017.
20.谷口 嘉昭, Tsubasa Miki, Yasuhide Ohno, Masao Nagase, Yukihiro Arakawa, Yasushi Imada, Keiji Minagawa and Mikito Yasuzawa :
ホスホリルコリン修飾によるグラフェン表面のタンパク質吸着抑制,
電子デバイス研究会(ED), 13, Aug. 2017.
21.森高 恭平, Yasuhide Ohno and Masao Nagase :
イオン性ゲルを用いたSiC上グラフェンデバイスの特性評価,
第8回集積化 MEMS 技術研究ワークショップ, No.P8, Jul. 2017.
22.木村 幸将, Yasuhide Ohno and Masao Nagase :
SiCグラフェン積層構造における電気特性の角度依存性,
第8回集積化 MEMS 技術研究ワークショップ, No.P1, Jul. 2017.
23.Masao Nagase :
SiC上グラフェンの 各種顕微鏡法による 観察・評価,
第32回 材料解析テクノフォーラム, Jul. 2017.
24.礒合 俊輔, Mikito Yasuzawa, Yasuhide Ohno and Masao Nagase :
Electrical characteristic evaluation of graphene on SiC,
電気化学会第84回大会, Mar. 2017.
25.谷口 嘉昭, 三木 翼, 光野 琢仁, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
分子修飾機能化による SiC 上グラフェンの非特異吸着の抑制,
第64回応用物理学会春季学術講演会(応物2017春), No.15a-B6-7, 15-085-(1pp), Mar. 2017.
26.北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェンの水吸着によるキャリア密度変化,
第64回応用物理学会春季学術講演会(応物2017春), No.15a-B6-6, 15-084-(1pp), Mar. 2017.
27.朴 理博, Masao Nagase and Yasuhide Ohno :
集束イオンビームを用いたステンシルリソグラフィ技術のための Sub10nm パターンの作製,
第64回応用物理学会春季学術講演会(応物2017春), No.15a-304-2, Mar. 2017.
28.谷口 嘉昭, Yasuhide Ohno and Masao Nagase :
SiC上グラフェンのタンパク質吸着特性,
サイエンスプラザ2016, No.52, Nov. 2016.
29.谷口 嘉昭, 三木 翼, 光野 琢仁, Yasuhide Ohno, Masao Nagase, Keiji Minagawa and Mikito Yasuzawa :
新規合成分子を用いた表面修飾による単結晶グラフェンの親水化,
第8回集積化MEMSシンボジウム, No.25pm4-PM-017, Oct. 2016.
30.北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェンのシート抵抗の湿度依存性,
第8回集積化MEMSシンボジウム, No.25pm4-PM-016, Oct. 2016.
31.Yasuhide Ohno, 光野 琢仁, 谷口 嘉昭 and Masao Nagase :
グラフェン本来のイオンセンシング特性,
第77回応用物理学会秋季学術講演会(応物2016秋), No.15p-A33-10, Sep. 2016.
32.北岡 誠, 永濱 拓也, 中村 晃大, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
SiC 上グラフェンの水脱離による導電率変化,
第77回応用物理学会秋季学術講演会(応物2016秋), No.15p-A33-2, Sep. 2016.
33.山田 祐輔, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
走査プローブ顕微鏡を用いた SiC 上グラフェンの実効ヤング率計測,
第77回応用物理学会秋季学術講演会(応物2016秋), No.13a-A32-4, Sep. 2016.
34.森本 征士, 有月 琢哉, 青木 翔, Yasuhide Ohno and Masao Nagase :
顕微ラマン分光法による SiC 上グラフェンの応力とキャリア密度の面内分布評価,
第77回応用物理学会秋季学術講演会(応物2016秋), No.13a-A32-3, Sep. 2016.
35.中村 晃大, 有月 琢哉, 高嶋 和也, 永濱 拓也, 北岡 誠, Masao Nagase and Yasuhide Ohno :
エピタキシャルグラフェン上の吸着水層,
第63回応用物理学会春季学術講演会(応物2016春), No.22a-S011-13, Mar. 2016.
36.楊 順涵, 有月 琢哉, 高嶋 和也, Yasuhide Ohno and Masao Nagase :
ロジウム - 二硫化モリブデン - グラフェンヘテロ接合の電気特性に関する研究,
第63回応用物理学会春季学術講演会(応物2016春), No.22a-S011-10, Mar. 2016.
37.Hisatomo Matsumura, Shin-ichiro Yanagiya, Akihiro Furube, Hiroki Kishikawa, Nobuo Goto and Masao Nagase :
SiC 上グラフェンに堆積した金ナノ粒子の SERS 効果,
第63回応用物理学会春季学術講演会(応物2016春), No.21p-P1-12, Mar. 2016.
38.Yasuhide Ohno, Masao Nagase and 松本 和彦 :
Cat-CVD 法による SiNx 絶縁膜を用いた SiC グラフェン FET の作製,
第76回応用物理学会秋季学術講演会(応物2015秋), No.15a-2T-1, Sep. 2015.
39.永濱 拓也, 小林 慶祐, 有月 琢哉, 高嶋 和也, 青木 翔, Yasuhide Ohno and Masao Nagase :
雰囲気制御による SiC 上グラフェンの抵抗値変化,
第76回応用物理学会秋季学術講演会(応物2015秋), No.15a-2T-9, Sep. 2015.
40.小田 達也, 小林 慶祐, 有月 琢哉, 青木 翔, 永濵 拓也 and Masao Nagase :
Carrier density variation of graphene on SiC by using HSQ,
第62回応用物理学会春季学術講演会(応物2015春), No.12a-D7-8, Mar. 2015.
41.影島 博之(島根大学), Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001) Si 面上第一層目グラフェン成長における [1-100]ステップの役割,
第75回応用物理学会秋季学術講演会(応物2014秋), No.19p-B3-3, Sep. 2014.
42.Yoshiaki Sekine, Hiroki Hibino, 小栗 克弥, 岩本 篤, Masao Nagase, Hiroyuki Kageshima and 赤崎 達志 :
Surface-Enhanced Raman Scattering of Graphene on SiC by Gold Nanoparticles,
第75回応用物理学会秋季学術講演会(応物2014秋), No.18p-B1-12, Sep. 2014.
43.青木 翔, 呉 龍錫, 井口 宗明, 中島 健志 and Masao Nagase :
SiC 上グラフェンのラマンスペクトルにおける表面成分抽出,
第75回応用物理学会秋季学術講演会(応物2014秋), No.18p-B1-9, Sep. 2014.
44.泰地 耕作, 奥村 俊夫, 中島 健志 and Masao Nagase :
SiC 上グラフェン表面電位の環境雰囲気効果に関する研究,
第75回応用物理学会秋季学術講演会(応物2014秋), No.17p-B1-5, Sep. 2014.
45.有月 琢哉, 奥村 俊夫, 呉 龍錫, 中島 健志, 小林 慶祐 and Masao Nagase :
デバイス化プロセスにおける SiC 上グラフェン電子物性変調,
第75回応用物理学会秋季学術講演会(応物2014秋), No.17p-B1-4, Sep. 2014.
46.茶谷 洋光, 奥村 俊夫, 伊澤 輝記, 井口 宗明, 中島 健志, 小林 慶祐, 呉 龍錫, 有月 琢哉, 松本 卓也, 前田 文彦, Hiroki Hibino and Masao Nagase :
グラフェン積層接合の電気特性,
第61回応用物理学会春季学術講演会(応物2014春), No.20a-E2-3, Mar. 2014.
47.呉 龍錫, 奥村 俊夫, 中島 健志, 有月 琢哉, 井口 宗明, 青木 翔, 小林 慶祐, 松本 卓也 and Masao Nagase :
SiC上グラフェンのオゾン処理によるキャリア密度制御,
第61回応用物理学会春季学術講演会(応物2014春), No.19p-E2-7, Mar. 2014.
48.Masao Nagase :
SiC上単結晶グラフェンの成長とその物性評価,
第61回応用物理学会春季学術講演会(応物2014春), No.18p-F7-5, Mar. 2014.
49.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001) Si面上エピタキシャルグラフェン成長における[1-100]ステップの役割,
第61回応用物理学会春季学術講演会(応物2014春), No.18p-E2-2, Mar. 2014.
50.茶谷 洋光, 田尾 拓人, 奥村 俊夫, 中島 健志, 小林 慶祐 and Masao Nagase :
表面構造制御による均一単層グラフェン成長,
平成25年度応用物理学会九州支部学術講演会, No.30Ea-11, Nov. 2013.
51.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001)上0層グラフェン成長における表面形状の起源,
日本物理学会 2013年秋季大会, No.28aDK-7, Sep. 2013.
52.井口 宗明, 中島 健志, 奥村 俊夫, 呉 龍錫 and Masao Nagase :
顕微ラマン分光法による SiC 上グラフェンの欠陥評価,
平成 25 年度 電気関係学会四国支部連合大会, No.11-9, Sep. 2013.
53.小林 慶祐, Shinichi Tanabe, 田尾 拓人, 呉 龍錫, 奥村 俊夫, 中島 健志, Hiroki Hibino and Masao Nagase :
SiC上グラフェンにおける移動度の異方性,
第74回応用物理学会秋季学術講演会(応物2013秋), No.18a-B1-4, Sep. 2013.
54.中島 健志, 奥村 俊夫, 田尾 拓人, 呉 龍錫, 井口 宗明 and Masao Nagase :
表面構造制御による均一単層グラフェン成長,
第74回応用物理学会秋季学術講演会(応物2013秋), No.17a-B1-10, Sep. 2013.
55.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001)面上第1層グラフェン成長初期過程とステップの役割,
第74回応用物理学会秋季学術講演会(応物2013秋), No.17p-B1-8, Sep. 2013.
56.西 勇輝, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi and Masao Nagase :
SiC上グラフェンによる原子層スイッチ,
第60回応用物理学会春季学術講演会(応物2013春), No.29a-G7-10, Mar. 2013.
57.岩田 義之, 岩本 篤, 井口 宗明 and Masao Nagase :
SiC上グラフェンのラマンスペクトル測定における基板効果の評価,
第60回応用物理学会春季学術講演会(応物2013春), No.28p-A6-8, Mar. 2013.
58.呉 龍錫, 高村 真琴, 古川 一暁, Masao Nagase and Hiroki Hibino :
SiC上グラフェン架橋構造作製のための電解エッチング条件の 検討,
第60回応用物理学会春季学術講演会(応物2013春), No.27p-G12-6, Mar. 2013.
59.伊澤 輝記, 船瀬 雄也, 西 勇輝 and Masao Nagase :
走査型摩擦力顕微鏡を用いたナノ摩擦係数測定,
第73回応用物理学会学術講演会(応物2012秋), No.13p-F7-4, Sep. 2012.
60.奥村 俊夫, 田尾 拓人, 呉 龍錫, 中島 健志 and Masao Nagase :
SiC上グラフェンの不均一成長メカニズム,
第73回応用物理学会学術講演会(応物2012秋), No.13p-C1-3, Sep. 2012.
61.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001)面上第0層グラフェン成長初期過程とステップの役割,
第73回応用物理学会学術講演会(応物2012秋), No.13p-C1-8, Sep. 2012.
62.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001)面上エピタキシャルグラ フェン成長の初期過程,
日本物理学会2012年春季第67回年次大会, Mar. 2012.
63.田尾 拓人, 呉 龍錫, 岩本 篤, 井口 宗明, 奥村 俊夫, 杉村 晶史, Masao Nagase and Hiroki Hibino :
4H-SiC(0001)上エピタキシャルグラフェンの 表面ラフネスと層数均一性との相関,
第59回 応用物理学関係連合講演会, No.17a-A3-4, Mar. 2012.
64.呉 龍錫, 岩本 篤, 田尾 拓人, 井口 宗明, 奥村 俊夫, 杉村 晶史, Takuro Tomita, Masao Nagase, Hiroki Hibino and Hiroshi Yamaguchi :
ひずみによるラマンシフトを用いた SiC 上グラフェンの層数評価,
第59回 応用物理学関係連合講演会, No.16a-B2-4, Mar. 2012.
65.Masao Nagase :
グラフェンの物性とデバイス応用,
応物九州支部オータムスクール 『 機能性薄膜とデバイス応用』, Nov. 2011.
66.Masao Nagase :
集積化ナノプローブによる表面物性評価,
第40回薄膜・表面物理基礎講座 『 ナノ材料研究者のための表面・界面の評価技術の基礎と動向』, Nov. 2011.
67.Masao Nagase :
SiC上グラフェンの物性評価技術,
炭素材料学会10月セミナー 「1日でわかるグラフェン入門 -グラフェンの基礎から合成,評価まで-」, Oct. 2011.
68.Masao Nagase :
新規カーボン材料グラフェンの基礎物性と応用可能性について,
第14回若手フォーラム 『材料の微細化・微構造制御と新機能の発現』 ∼次世代につながるセラミックステクノロジー∼, Oct. 2011.
69.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
トレンチモデルを用いた SiC(0001)上グラフェン成長の検討,
日本物理学会2011年秋季大会, Sep. 2011.
70.Masao Nagase :
電子顕微鏡によるグラフェン観察,
SCANTECH2011 第20回記念講演会「SEM過去から未来へ」, Sep. 2011.
71.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
単層エピタキシャルグラフェンの特異な抵抗の温度依存性,
第72回 応用物理学会学術講演会, No.1p-E-5, Sep. 2011.
72.船瀬 雄也, 岩本 篤, 西 勇輝, Masao Nagase, Hiroki Hibino and Hiroshi Yamaguchi :
エピタキシャルグラフェンの摩擦力の層数依存評価,
第72回 応用物理学会学術講演会, No.1a-E-14, Sep. 2011.
73.岩本 篤, 呉 龍錫, 船瀬 雄也, 西 勇輝, 湯浅 貴浩, Takuro Tomita, Masao Nagase, Yoshiaki Sekine, Hiroki Hibino and Hiroshi Yamaguchi :
ラマン分光法によるSiC上グラフェンの内部応力解析,
第72回 応用物理学会学術講演会, No.1a-E-1, Sep. 2011.
74.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
S i C ( 0 0 0 1 )上エピタキシャルグラフェン成長におけるS i 脱離とC 吸着の効果の比較,
第72回 応用物理学会学術講演会, No.1p-ZF-4, Sep. 2011.
75.西 勇輝, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi :
グラフェンメンブレンの形状変化,
第72回 応用物理学会学術講演会, No.30p-E-6, Aug. 2011.
76.Masao Nagase :
グラフェンの基礎と材料としての魅力,
日本化学会 講演会「グラフェンの魅力∼基礎と応用の観点から」, Jul. 2011.
77.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001)面上エピタキシャルグラ フェンの構造と形成 (招待講演),
応用物理学会シリコンテクノロジー分科会第137回研究集会「ゲートスタッ ク技術の進展-半導体機能界面の特性評価を中心に」, Jul. 2011.
78.Masao Nagase :
ナノプロセスと材料による新たなデバイスの創出,
第58回 応用物理学関係連合講演会シンポジウム:異種機能集積化と応用物理~最先端多様分野の融合によって拓かれ る未来社会~, No.26p-BV-4, Mar. 2011.
79.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC(0001) 面上での S i 脱離とグラフェン形成,
第58回 応用物理学関係連合講演会, No.26p-BM-1, Mar. 2011.
80.呉 龍錫, 岩本 篤, 西 勇輝, 船瀬 雄也, 湯浅 貴浩, Takuro Tomita, Masao Nagase, Hiroki Hibino and Hiroshi Yamaguchi :
ラマン分光法による 4H-SiC 上エピタキシャルグラフェンの膜質評価,
第58回 応用物理学関係連合講演会, No.26p-KE-17, Mar. 2011.
81.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
エピタキシャルグラフェンの Hall 移動度評価,
第58回 応用物理学関係連合講演会, No.26p-KE-14, Mar. 2011.
82.関根 佳明, Hiroki Hibino, 小栗 克弥, 赤崎 達志, Hiroyuki Kageshima, Masao Nagase and Hiroshi Yamaguchi :
SiC 上グラフェンの表面増強ラマン散乱,
日本物理学会 第66回年次大会, No.26aTA-3, Mar. 2011.
83.Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase :
SiC上エピタキシャルグラフェンのステップ境界,
第71回応用物理学会学術講演会, No.16a-ZM-9, Sep. 2010.
84.Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino :
単層エピタキシャルグラフェンにおける半整数量子ホール効果の観測,
第71回応用物理学会学術講演会, No.16a-ZQ-11, Sep. 2010.

Et cetera, Workshop:

1.Masanobu Haraguchi, Takahiro Kitada, Masao Nagase, Takeshi Yasui, Yohsuke Kinouchi, Katsuyuki Miyawaki, Akira Takahashi and Toshiya Okahisa :
LEDライフイノベーション総合プラットフォーム推進事業の取り組み,
LED総合フォーラム2019in徳島, P-2, Feb. 2019.
2.Masao Nagase and Yasuhide Ohno :
単結晶グラフェン積層接合デバイス,
LED総合フォーラム2019in徳島, No.P-14, 85-86, Feb. 2019.
3.Masao Nagase :
Single-crystal graphene on SiC for electronic devices,
平成30年度 共同プロジェクト研究発表会, No.P16, Feb. 2019.
4.Masao Nagase, Yasuhide Ohno and Mikito Yasuzawa :
集束イオンビーム技術によるナノ電極プローブの開発,
社会産業理工学研究交流会2018, No.No.27, Sep. 2018.
5.Masao Nagase and Yasuhide Ohno :
大面積単結晶グラフェン膜の合成とデバイス応用,
計量計測展2018, Vol.M-34-18, Sep. 2018.
6.Masao Nagase :
Functionalization of graphene on SiC by deionized water treatment,
平成29年度 共同プロジェクト研究発表会, No.P19, Feb. 2018.
7.Masanobu Haraguchi, Takahiro Kitada, Masao Nagase, Takeshi Yasui, Yohsuke Kinouchi, Katsuyuki Miyawaki, Akira Takahashi and Toshiya Okahisa :
LEDライフイノベーション総合プラットフォーム推進事業におけるテラヘルツLED応用基盤技術に関する取り組み,
LED総合フォーラム2018in徳島, P-2, Feb. 2018.
8.Masanobu Haraguchi, Yohsuke Kinouchi, Takahiro Kitada, Masao Nagase, Takeshi Yasui, Katsuyuki Miyawaki, Akira Takahashi and Toshiya Okahisa :
LEDライフイノベーション総合プラットフォーム推進事業におけるテラヘルツLED応用基盤技術に関する取り組み,
LED総合フォーラム2016in徳島 論文集, 201-202, Dec. 2016.
9.Masao Nagase :
SiC上グラフェンのナノ物性評価,
JSM SPM分科会・RIIFセミナー-グリーンエレクトロニクス材料・デバイスのSPM解析技術-, Mar. 2015.
10.Masao Nagase :
Graphene on SiC substrate fabricated by infrared rapid thermal annealer, --- [Invited] ---,
India-Japan workshop on "Nanotechnology: Synthesis & Sensing Applications", Oct. 2014.
11.Masao Nagase :
高品質単層エピタキシャルグラフェン作製技術,
産総研セミナー, Feb. 2014.
12.Masao Nagase :
エピタキシャルグラフェン作製技術の研究,
香川大学工学部 第9回先端工学研究発表会, Feb. 2014.
13.Masao Nagase :
グラフェンの極限デバイス応用への提案,
徳島県「ものづくり新技術展示商談会in HONDA」, Sep. 2013.
14.Masao Nagase :
SiC昇華法による単結晶グラフェン作製技術,
第2回和歌山大・徳島大合同 光・ナノテクノロジー研究会, Aug. 2013.
15.Masao Nagase :
新炭素ナノ材料・グラフェンについて,
徳島大学工業会 東海支部 第33回支部総会, Jul. 2013.
16.Masao Nagase :
高品質単結晶単層グラフェンの作製技術,
徳島大学 新技術説明会, Feb. 2013.
17.Masao Nagase :
高品質エピタキシャルグラフェン作製,
第12回 徳島大学研究者との集い, Jun. 2012.
18.Masao Nagase :
SiC上グラフェンの物性評価と応用技術について,
第105回黒鉛化合物研究会, Jan. 2012.
19.Masao Nagase :
グラフェンとその応用,
学振・第133委員会 第211回 研究会, Oct. 2011.
20.Masao Nagase :
グラフェンの作製と応用展開,
情報機構セミナー, Mar. 2011.
21.Masao Nagase :
グラフェン材料開発の最前線,
学振・将来加工技術第136委員会 第11回研究会(合同), Nov. 2010.
22.Masao Nagase :
グラフェン研究の現状と新規材料としての可能性について,
CPC研究会, Jun. 2010.

Patent:

1.Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, Hiroshi Yamaguchi and 藤原 聡 : 磁気電気効果素子, 2010-162612 (Jul. 2011), 2012-028369 (Feb. 2012), .
2.Masao Nagase : プローブの作製方法およびプローブ,ならびに走査プローブ顕微鏡, 2010-193527 (Aug. 2010), 2010-276617 (Dec. 2010), 5044003 (Jul. 2012).
3.Hiroshi Yamaguchi, Masao Nagase, 岡本 創, 米谷 玲皇, Sunao Ishihara, Shinichi Warisawa and 黒田 耕平 : 微小構造体の製造方法, 2010-141690 (Jun. 2010), 2012-009497 (Jan. 2012), .
4.Hiroshi Yamaguchi, Masao Nagase, 岡本 創, 米谷 玲皇, Sunao Ishihara, Shinichi Warisawa and 遊佐 幸樹 : 微小構造体の作製方法, 2010-122423 (May 2010), 2011-246780 (Dec. 2011), .
5.Shinichi Tanabe, Hiroki Hibino, Masao Nagase and Yoshiaki Sekine : グラフェントランジスタおよびその製造方法, 2010-037004 (Feb. 2010), 2011-175996 (Sep. 2011), .
6.Masao Nagase, Hiroshi Yamaguchi, Sunao Ishihara, Shinichi Warisawa and Kojiro Tamaru : 薄膜振動子およびその製造方法, 2009-78589 (Mar. 2009), 2010-232983 (Oct. 2010), .
7.Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi : 抵抗可変電子素子, 2008-226923 (Sep. 2008), 2010-62358 (Mar. 2010), 5155072 (Dec. 2012).
8.Masao Nagase, 岡本 創 and Hiroshi Yamaguchi : 超伝導材料及びその製造方法, 2007-171802 (Jun. 2007), 2009-007216 (Jan. 2009), 5144143 (Nov. 2012).
9.西口 克彦, Hiroshi Yamaguchi, 小野 行徳, 藤原 聡 and Masao Nagase : 走査型プローブ顕微鏡用探針, 2006-312723 (Nov. 2006), 2008-128767 (Jun. 2008), P4680868 (Feb. 2011).
10.西口 克彦, Hiroshi Yamaguchi, 小野 行徳, 藤原 聡 and Masao Nagase : 電子放出素子, 2006-303761 (Nov. 2006), 2008-123743 (May 2008), P4795915 (Aug. 2011).
11.Masao Nagase : 機能デバイスの作製方法および機能デバイス, 2004-278026 (Sep. 2004), 2006-088202 (Apr. 2006), 4627168 (Nov. 2010).

Grants-in-Aid for Scientific Research (KAKEN Grants Database @ NII.ac.jp)

  • エピタキシャルグラフェンによる電荷移動型FETバイオセンサの開発 (Project/Area Number: 19H02582 )
  • High performance arrayed graphene-based image biosensors (Project/Area Number: 15H03551 )
  • Study on heterogeneous integration of graphene device (Project/Area Number: 26289107 )
  • Controlling of local electro-mechanical properties of few-layer graphen (Project/Area Number: 22310086 )
  • Creation of single-crystal graphene substrate through surface structure control on a wafer scale (Project/Area Number: 21246006 )
  • Nanomechanical parametron devices (Project/Area Number: 20246064 )
  • Investigation of nano-scale conductance properties of few layer graphene films (Project/Area Number: 19310085 )
  • Search by Researcher Number (20393762)